{"title":"具有垂直磁各向异性的磁补偿纳米薄镓取代钇铁石榴石(Ga:YIG)薄膜","authors":"Carsten Dubs, Oleksii Surzhenko","doi":"10.1002/aelm.202500232","DOIUrl":null,"url":null,"abstract":"Magnetically full or partially compensated insulating ferrimagnets with perpendicular magnetic anisotropy (PMA) offer valuable insights into fundamental spin‐wave physics and high‐speed magnonic applications. This study reports on key magnetic parameters of nanometer‐thin Ga substituted yttrium iron garnet (Ga:YIG) films with saturation magnetization 4π<jats:italic>M</jats:italic><jats:sub>s</jats:sub> below 200 G. Vibrating sample magnetometry (VSM) is used to determine the remanent magnetization 4π<jats:italic>M</jats:italic><jats:sub>r</jats:sub> and the polar orientation of the magnetic easy axis in samples with very low net magnetic moments. Additionally, the temperature dependence of the net magnetization of magnetically compensated Ga:YIG films, with compensation points <jats:italic>T</jats:italic><jats:sub>comp</jats:sub> near room temperature, is investigated. For films with remanent magnetization values below 60 G at room temperature, the compensation points <jats:italic>T</jats:italic><jats:sub>comp</jats:sub> are determined and correlated with their Curie temperatures <jats:italic>T</jats:italic><jats:sub>C</jats:sub>. Ferromagnetic resonance (FMR) measurements at 6.5 GHz show that the FMR linewidths Δ<jats:italic>H</jats:italic><jats:sub>FWHM</jats:sub> correlate inversely proportional with the remanent magnetization. The reduced saturation magnetization in the Ga:YIG films leads to a significant increase in the effective magnetization 4π<jats:italic>M</jats:italic><jats:sub>eff</jats:sub> and thus enables films with robust PMA. This opens up a new parameter space for the fine‐tuning of potential magnonic spin‐wave devices on commonly used GGG substrates.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"28 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Magnetically Compensated Nanometer‐Thin Ga‐Substituted Yttrium Iron Garnet (Ga:YIG) Films with Robust Perpendicular Magnetic Anisotropy\",\"authors\":\"Carsten Dubs, Oleksii Surzhenko\",\"doi\":\"10.1002/aelm.202500232\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Magnetically full or partially compensated insulating ferrimagnets with perpendicular magnetic anisotropy (PMA) offer valuable insights into fundamental spin‐wave physics and high‐speed magnonic applications. This study reports on key magnetic parameters of nanometer‐thin Ga substituted yttrium iron garnet (Ga:YIG) films with saturation magnetization 4π<jats:italic>M</jats:italic><jats:sub>s</jats:sub> below 200 G. Vibrating sample magnetometry (VSM) is used to determine the remanent magnetization 4π<jats:italic>M</jats:italic><jats:sub>r</jats:sub> and the polar orientation of the magnetic easy axis in samples with very low net magnetic moments. Additionally, the temperature dependence of the net magnetization of magnetically compensated Ga:YIG films, with compensation points <jats:italic>T</jats:italic><jats:sub>comp</jats:sub> near room temperature, is investigated. For films with remanent magnetization values below 60 G at room temperature, the compensation points <jats:italic>T</jats:italic><jats:sub>comp</jats:sub> are determined and correlated with their Curie temperatures <jats:italic>T</jats:italic><jats:sub>C</jats:sub>. Ferromagnetic resonance (FMR) measurements at 6.5 GHz show that the FMR linewidths Δ<jats:italic>H</jats:italic><jats:sub>FWHM</jats:sub> correlate inversely proportional with the remanent magnetization. The reduced saturation magnetization in the Ga:YIG films leads to a significant increase in the effective magnetization 4π<jats:italic>M</jats:italic><jats:sub>eff</jats:sub> and thus enables films with robust PMA. This opens up a new parameter space for the fine‐tuning of potential magnonic spin‐wave devices on commonly used GGG substrates.\",\"PeriodicalId\":110,\"journal\":{\"name\":\"Advanced Electronic Materials\",\"volume\":\"28 1\",\"pages\":\"\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2025-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/aelm.202500232\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202500232","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Magnetically Compensated Nanometer‐Thin Ga‐Substituted Yttrium Iron Garnet (Ga:YIG) Films with Robust Perpendicular Magnetic Anisotropy
Magnetically full or partially compensated insulating ferrimagnets with perpendicular magnetic anisotropy (PMA) offer valuable insights into fundamental spin‐wave physics and high‐speed magnonic applications. This study reports on key magnetic parameters of nanometer‐thin Ga substituted yttrium iron garnet (Ga:YIG) films with saturation magnetization 4πMs below 200 G. Vibrating sample magnetometry (VSM) is used to determine the remanent magnetization 4πMr and the polar orientation of the magnetic easy axis in samples with very low net magnetic moments. Additionally, the temperature dependence of the net magnetization of magnetically compensated Ga:YIG films, with compensation points Tcomp near room temperature, is investigated. For films with remanent magnetization values below 60 G at room temperature, the compensation points Tcomp are determined and correlated with their Curie temperatures TC. Ferromagnetic resonance (FMR) measurements at 6.5 GHz show that the FMR linewidths ΔHFWHM correlate inversely proportional with the remanent magnetization. The reduced saturation magnetization in the Ga:YIG films leads to a significant increase in the effective magnetization 4πMeff and thus enables films with robust PMA. This opens up a new parameter space for the fine‐tuning of potential magnonic spin‐wave devices on commonly used GGG substrates.
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.