Neuromorphic Computing with Memcapacitors: Advancements, Challenges, and Future Directions

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Nada AbuHamra, Muhammad Umair Khan, Eman Hassan, Mahmoud Al Qutayri, Baker Mohammad
{"title":"Neuromorphic Computing with Memcapacitors: Advancements, Challenges, and Future Directions","authors":"Nada AbuHamra, Muhammad Umair Khan, Eman Hassan, Mahmoud Al Qutayri, Baker Mohammad","doi":"10.1002/aelm.202500250","DOIUrl":null,"url":null,"abstract":"Modern applications demand immense data processing and computational power, yet conventional architectures, constrained by the Von Neumann bottleneck and data presentation, struggle to meet these requirements. This has driven the rise of neuromorphic computing, which mimics the biological nervous system through spike-encoded data and threshold-based computations for high energy efficiency. However, traditional hardware (CMOS transistors) designed for continuous computations fails to harness this potential fully, necessitating specialized neuromorphic hardware alternatives. Memristors have emerged as key components for neuromorphic hardware but suffer from high static power consumption, sneak-path currents, and reliance on selector devices. In contrast, memcapacitors provide a more efficient alternative, leveraging high resistance and charge-domain computations to overcome these limitations. This review presents a comprehensive analysis of memcapacitors for neuromorphic applications, covering capacitive switching mechanisms and materials, key hardware considerations, and recent advancements. It explores their role in artificial synapses, physical reservoir computing, and crossbar-based accelerators, highlighting their potential for scalable and low-power neuromorphic systems. Finally, key challenges and future research directions are discussed, particularly in materials engineering, device fabrication, and large-scale system integration, positioning memcapacitors as promising candidates for next-generation neuromorphic computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202500250","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Modern applications demand immense data processing and computational power, yet conventional architectures, constrained by the Von Neumann bottleneck and data presentation, struggle to meet these requirements. This has driven the rise of neuromorphic computing, which mimics the biological nervous system through spike-encoded data and threshold-based computations for high energy efficiency. However, traditional hardware (CMOS transistors) designed for continuous computations fails to harness this potential fully, necessitating specialized neuromorphic hardware alternatives. Memristors have emerged as key components for neuromorphic hardware but suffer from high static power consumption, sneak-path currents, and reliance on selector devices. In contrast, memcapacitors provide a more efficient alternative, leveraging high resistance and charge-domain computations to overcome these limitations. This review presents a comprehensive analysis of memcapacitors for neuromorphic applications, covering capacitive switching mechanisms and materials, key hardware considerations, and recent advancements. It explores their role in artificial synapses, physical reservoir computing, and crossbar-based accelerators, highlighting their potential for scalable and low-power neuromorphic systems. Finally, key challenges and future research directions are discussed, particularly in materials engineering, device fabrication, and large-scale system integration, positioning memcapacitors as promising candidates for next-generation neuromorphic computing.

Abstract Image

记忆电容器的神经形态计算:进展、挑战和未来方向
现代应用程序需要巨大的数据处理和计算能力,然而传统架构受到冯·诺依曼瓶颈和数据表示的限制,难以满足这些要求。这推动了神经形态计算的兴起,它通过峰值编码数据和基于阈值的计算来模拟生物神经系统,以实现高能效。然而,为连续计算而设计的传统硬件(CMOS晶体管)无法充分利用这种潜力,因此需要专门的神经形态硬件替代品。记忆电阻器已成为神经形态硬件的关键部件,但存在高静态功耗、潜行路径电流和依赖选择器器件的问题。相比之下,memcapacitors提供了一个更有效的替代方案,利用高电阻和电荷域计算来克服这些限制。本文综述了神经形态记忆电容器的应用,包括电容开关机制和材料,关键硬件考虑和最新进展。它探讨了它们在人工突触、物理储层计算和基于交叉棒的加速器中的作用,突出了它们在可扩展和低功耗神经形态系统中的潜力。最后,讨论了关键挑战和未来的研究方向,特别是在材料工程,器件制造和大规模系统集成方面,将memcapacitors定位为下一代神经形态计算的有希望的候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信