Tunable Anomalous Hall Effect in Non‐Magnetic Topological Semimetal Cd3As2 Nanoplates

Abstract

The emergence of topology has profoundly transformed condensed matter physics, driving the discovery of topological materials, including topological semimetals. Here, we report the observation of gate‐tunable anomalous Hall effect (AHE) in the non‐magnetic Dirac semimetal Cd3As2. The anomalous Hall conductivity reaches the maximum when the gate voltage is near the Dirac point. Fitting the anomalous Hall resistivity using the scaling relationship of AHE reveals that the AHE in Cd3As2 is dominated by the intrinsic contribution of Berry curvature. Our results are valuable for understanding AHE in topological semimetals and could have possible potential applications in topological devices.