Tobias Wollandt, Sabrina Steffens, Karla Cordero-Solano, Florian Letzkus, Joachim N. Burghartz, Hagen Klauk
{"title":"巯基化金底源和漏极触点有机薄膜晶体管的空气稳定性","authors":"Tobias Wollandt, Sabrina Steffens, Karla Cordero-Solano, Florian Letzkus, Joachim N. Burghartz, Hagen Klauk","doi":"10.1002/aelm.202500298","DOIUrl":null,"url":null,"abstract":"The contact resistance and the intrinsic channel mobility of p-channel and n-channel organic thin-film transistors (TFTs) based on four different vacuum-deposited small-molecule semiconductors are monitored while the TFTs are stored in ambient air. The TFTs are fabricated in the inverted coplanar (bottom-gate, bottom-contact) device architecture, and the gold contact surface is functionalized using thiols. The initial contact resistance of all TFTs is quite small, between and 125 and 450 Ωcm, but it degrades quite rapidly over a span of 150 h, by 43% to 500%, depending on the semiconductor. Simultaneously, the intrinsic channel mobility degrades only slightly (between 11% and 50%), indicating that device degradation occurs primarily at the contact-semiconductor interface. Across all investigated parameters, DPh-DNTT is found to yield the most air-stable TFTs among the semiconductors investigated here.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"50 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Air Stability of Organic Thin-Film Transistors with Thiol-Functionalized Gold Bottom Source and Drain Contacts\",\"authors\":\"Tobias Wollandt, Sabrina Steffens, Karla Cordero-Solano, Florian Letzkus, Joachim N. Burghartz, Hagen Klauk\",\"doi\":\"10.1002/aelm.202500298\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The contact resistance and the intrinsic channel mobility of p-channel and n-channel organic thin-film transistors (TFTs) based on four different vacuum-deposited small-molecule semiconductors are monitored while the TFTs are stored in ambient air. The TFTs are fabricated in the inverted coplanar (bottom-gate, bottom-contact) device architecture, and the gold contact surface is functionalized using thiols. The initial contact resistance of all TFTs is quite small, between and 125 and 450 Ωcm, but it degrades quite rapidly over a span of 150 h, by 43% to 500%, depending on the semiconductor. Simultaneously, the intrinsic channel mobility degrades only slightly (between 11% and 50%), indicating that device degradation occurs primarily at the contact-semiconductor interface. Across all investigated parameters, DPh-DNTT is found to yield the most air-stable TFTs among the semiconductors investigated here.\",\"PeriodicalId\":110,\"journal\":{\"name\":\"Advanced Electronic Materials\",\"volume\":\"50 1\",\"pages\":\"\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2025-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/aelm.202500298\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202500298","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Air Stability of Organic Thin-Film Transistors with Thiol-Functionalized Gold Bottom Source and Drain Contacts
The contact resistance and the intrinsic channel mobility of p-channel and n-channel organic thin-film transistors (TFTs) based on four different vacuum-deposited small-molecule semiconductors are monitored while the TFTs are stored in ambient air. The TFTs are fabricated in the inverted coplanar (bottom-gate, bottom-contact) device architecture, and the gold contact surface is functionalized using thiols. The initial contact resistance of all TFTs is quite small, between and 125 and 450 Ωcm, but it degrades quite rapidly over a span of 150 h, by 43% to 500%, depending on the semiconductor. Simultaneously, the intrinsic channel mobility degrades only slightly (between 11% and 50%), indicating that device degradation occurs primarily at the contact-semiconductor interface. Across all investigated parameters, DPh-DNTT is found to yield the most air-stable TFTs among the semiconductors investigated here.
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.