Highly Efficient Current‐Induced Torques Originating from Topological Surface States in Sb2Te3

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2025-09-09 DOI:10.1002/aelm.202500280

Matteo Fettizio, Can Onur Avci, Roberto Mantovan, Emanuele Longo

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引用次数: 0

Abstract

Topological insulators (TIs) have shown great promise for the development of energy‐efficient and ultra‐fast spintronic devices leveraging charge‐spin interconversion (CSIC) mechanisms. Among them, chalcogenide‐based TIs stand out for their compatibility with wafer‐scale growth techniques. Recent studies have validated the topological properties of Sb2Te3 thin films grown via metal–organic chemical vapor deposition on 4‐inch wafers. To advance Sb2Te3‐based devices toward practical applications, CSIC efficiency must be evaluated under charge current injection in miniaturized electronic devices. The present study investigates spin‐orbit torque (SOT) and magnetoresistive responses in Sb2Te3/Au/Co/Au. Measurements reveal the high SOT efficiency acting on Co and originating from Sb2Te3, equivalent to a spin Hall angle up to 62.8 ± 3.2, and a spin Hall conductivity up to 3.6 ± 0.2 × 106 . These findings underscore the potential of the Sb2Te3 TI as a leading candidate for efficient spintronic devices, providing a solid foundation for its integration into novel functional devices.

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Sb2Te3中源于拓扑表面态的高效电流感应转矩

拓扑绝缘体（TIs）在利用电荷-自旋相互转换（CSIC）机制开发节能和超快自旋电子器件方面显示出巨大的前景。其中，硫系化合物基ti因其与晶圆级生长技术的兼容性而脱颖而出。最近的研究证实了通过金属有机化学气相沉积在4英寸晶圆上生长的Sb2Te3薄膜的拓扑特性。为了将基于Sb2Te3的器件推向实际应用，必须在小型化电子器件的电荷电流注入下评估CSIC效率。本研究研究了Sb2Te3/Au/Co/Au中自旋轨道转矩（SOT）和磁阻响应。结果表明，Sb2Te3产生的SOT作用于Co的效率很高，自旋霍尔角高达62.8±3.2，自旋霍尔电导率高达3.6±0.2 × 106。这些发现强调了Sb2Te3 TI作为高效自旋电子器件的主要候选材料的潜力，为其集成到新型功能器件中提供了坚实的基础。

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.