采用超薄Al2O3钝化和低热预算退火的全溅射a-IGZO tft提高逻辑电路性能

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Yongchun Zhang, Jiawei Yang, Shanshan Jiang, Huanhuan Wei, Bo He, Chii-Ming Wu, Gang He
{"title":"采用超薄Al2O3钝化和低热预算退火的全溅射a-IGZO tft提高逻辑电路性能","authors":"Yongchun Zhang, Jiawei Yang, Shanshan Jiang, Huanhuan Wei, Bo He, Chii-Ming Wu, Gang He","doi":"10.1002/aelm.202500505","DOIUrl":null,"url":null,"abstract":"Developing low-temperature sputtering for gate dielectrics is crucial for simple, flexible oxide TFT fabrication. However, such films suffer from low capacitance, high leakage, and high interfacial defects. This work proposes a synergistic strategy using an ultrathin alumina passivation layer combined with ultraviolet-assisted oxygen ambient rapid thermal annealing (UV-ORTA) to enable fully low-temperature sputtered high-performance amorphous indium gallium zinc oxide (a-IGZO) TFTs. The UV-ORTA process significantly improves the gate dielectric by reducing oxygen vacancies, increasing optical bandgap, and boosting capacitance density. The sputtered alumina layer effectively optimizes the dielectric/active layer interface, reducing defect density comparably to atomic layer deposition. TFTs fabricated entirely by sputtering at 200 °C demonstrate high performance: saturation mobility of 14.5 cm<sup>2</sup>·V<sup>−1</sup>·s<sup>−1</sup>, on/off ratio of 8.6 × 10<sup>6</sup>, subthreshold swing of 0.09 V/dec, and good bias stability. Resulting inverters show full-swing operation, sensitive dynamic response, excellent frequency stability, and a voltage gain exceeding 12. This strategy provides a promising solution for low-temperature, fully-sputtered all-oxide TFTs compatible with flexible displays.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"61 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2025-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fully Sputtered a-IGZO TFTs with Ultrathin Al2O3 Passivation and Low-Thermal-Budget Annealing for Enhanced Logic Circuit Performance\",\"authors\":\"Yongchun Zhang, Jiawei Yang, Shanshan Jiang, Huanhuan Wei, Bo He, Chii-Ming Wu, Gang He\",\"doi\":\"10.1002/aelm.202500505\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Developing low-temperature sputtering for gate dielectrics is crucial for simple, flexible oxide TFT fabrication. However, such films suffer from low capacitance, high leakage, and high interfacial defects. This work proposes a synergistic strategy using an ultrathin alumina passivation layer combined with ultraviolet-assisted oxygen ambient rapid thermal annealing (UV-ORTA) to enable fully low-temperature sputtered high-performance amorphous indium gallium zinc oxide (a-IGZO) TFTs. The UV-ORTA process significantly improves the gate dielectric by reducing oxygen vacancies, increasing optical bandgap, and boosting capacitance density. The sputtered alumina layer effectively optimizes the dielectric/active layer interface, reducing defect density comparably to atomic layer deposition. TFTs fabricated entirely by sputtering at 200 °C demonstrate high performance: saturation mobility of 14.5 cm<sup>2</sup>·V<sup>−1</sup>·s<sup>−1</sup>, on/off ratio of 8.6 × 10<sup>6</sup>, subthreshold swing of 0.09 V/dec, and good bias stability. Resulting inverters show full-swing operation, sensitive dynamic response, excellent frequency stability, and a voltage gain exceeding 12. This strategy provides a promising solution for low-temperature, fully-sputtered all-oxide TFTs compatible with flexible displays.\",\"PeriodicalId\":110,\"journal\":{\"name\":\"Advanced Electronic Materials\",\"volume\":\"61 1\",\"pages\":\"\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2025-09-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/aelm.202500505\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202500505","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

发展低温溅射的栅极介质是关键的简单,柔性氧化物TFT制造。然而,这种薄膜存在低电容、高漏电和高界面缺陷的问题。这项工作提出了一种协同策略,使用超薄氧化铝钝化层结合紫外线辅助氧环境快速热退火(UV-ORTA)来实现完全低温溅射高性能非晶铟镓锌氧化物(a- igzo) tft。UV-ORTA工艺通过减少氧空位、增加光带隙和提高电容密度显著改善栅极介电性。与原子层沉积相比,溅射氧化铝层有效地优化了介电/有源层界面,降低了缺陷密度。在200°C下完全通过溅射制备的tft具有良好的性能:饱和迁移率为14.5 cm2·V−1·s−1,开/关比为8.6 × 106,亚阈值摆幅为0.09 V/dec,并且具有良好的偏置稳定性。由此产生的逆变器具有全摆幅工作、灵敏的动态响应、优异的频率稳定性和超过12的电压增益。该策略为与柔性显示器兼容的低温、全溅射全氧化tft提供了一个有前途的解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Fully Sputtered a-IGZO TFTs with Ultrathin Al2O3 Passivation and Low-Thermal-Budget Annealing for Enhanced Logic Circuit Performance

Fully Sputtered a-IGZO TFTs with Ultrathin Al2O3 Passivation and Low-Thermal-Budget Annealing for Enhanced Logic Circuit Performance
Developing low-temperature sputtering for gate dielectrics is crucial for simple, flexible oxide TFT fabrication. However, such films suffer from low capacitance, high leakage, and high interfacial defects. This work proposes a synergistic strategy using an ultrathin alumina passivation layer combined with ultraviolet-assisted oxygen ambient rapid thermal annealing (UV-ORTA) to enable fully low-temperature sputtered high-performance amorphous indium gallium zinc oxide (a-IGZO) TFTs. The UV-ORTA process significantly improves the gate dielectric by reducing oxygen vacancies, increasing optical bandgap, and boosting capacitance density. The sputtered alumina layer effectively optimizes the dielectric/active layer interface, reducing defect density comparably to atomic layer deposition. TFTs fabricated entirely by sputtering at 200 °C demonstrate high performance: saturation mobility of 14.5 cm2·V−1·s−1, on/off ratio of 8.6 × 106, subthreshold swing of 0.09 V/dec, and good bias stability. Resulting inverters show full-swing operation, sensitive dynamic response, excellent frequency stability, and a voltage gain exceeding 12. This strategy provides a promising solution for low-temperature, fully-sputtered all-oxide TFTs compatible with flexible displays.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信