IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003.最新文献_第6页

Validating and characterizing high speed datacom devices 验证和表征高速数据通信设备

IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003. Pub Date : 2003-07-16 DOI: 10.1109/IEMT.2003.1225904

T. Napier

引用次数: 0

A new wafer level package for improved electrical and reliability performance 一个新的晶圆级封装，提高电气和可靠性性能

IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003. Pub Date : 2003-07-16 DOI: 10.1109/IEMT.2003.1225893

S. Barrett, J. Reche, Deok-Hoon Kim, D. Stepniak

引用次数: 2

A novel gold deposition process for wafer applications 一种新的晶圆金沉积工艺

IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003. Pub Date : 2003-07-16 DOI: 10.1109/IEMT.2003.1225921

N. Brown, E. Douglass

{"title":"A novel gold deposition process for wafer applications","authors":"N. Brown, E. Douglass","doi":"10.1109/IEMT.2003.1225921","DOIUrl":"https://doi.org/10.1109/IEMT.2003.1225921","url":null,"abstract":"The deposition of nickel and gold layers as under bump metallurgy (UBM) for wafer bump applications has been established as a viable means of ensuring adhesion and bond reliability. These nickel/gold layers can be used in subsequent processes that employ either wire bonding directly to die pads or screened and reflowed solder paste for connectivity to next level substrates. This paper will discuss the process chemistries used to produce nickel/gold metallurgies over copper or aluminum die pads. Conventional immersion gold processes deposit gold from solution via a displacement reaction with the surface of the nickel layer. This reaction continues until the gold completely covers any available nickel sites. This mechanism, therefore, limits the possible thicknesses obtainable from immersion gold processes to about 0.10-0.15 microns. A new gold deposition process will be described that operates in a similar way but is not limited by the displacement mechanism. This chemistry is capable of depositing significantly higher thicknesses of gold over nickel substrates, thus allowing this technology to be used for many new applications that normally would require electrolytic deposition of gold. The advantages of using an 'immersion' process are it's ability to deposit very uniform deposit thicknesses across a wafer surface, no requirement for electrical continuity across the plateable surface and the practicality of processing a large number of wafers at one time. Performance results and operating characteristics of the new gold process will be reviewed. Pretreatment processes necessary to ensure optimum reliability will also be discussed.","PeriodicalId":106415,"journal":{"name":"IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003.","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116356553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The challenge of testing ultra fine pitch wire bonds 测试超细间距金属键的挑战

IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003. Pub Date : 2003-07-16 DOI: 10.1109/IEMT.2003.1225876

R. Sykes

引用次数: 2

A methodology for the generation of dynamic compact models of packages and heat sinks from thermal transient measurements 从热瞬态测量中生成封装和散热器的动态紧凑模型的方法

IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003. Pub Date : 2003-07-16 DOI: 10.1109/IEMT.2003.1225887

M. Rencz, G. Farkas, A. Poppe, V. Székely, B. Courtois

引用次数: 19

Customer driven innovation process 客户驱动的创新过程

IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003. Pub Date : 2003-07-16 DOI: 10.1109/IEMT.2003.1225925

R. Pennisi, G. Kim

{"title":"Customer driven innovation process","authors":"R. Pennisi, G. Kim","doi":"10.1109/IEMT.2003.1225925","DOIUrl":"https://doi.org/10.1109/IEMT.2003.1225925","url":null,"abstract":"In order to drive improvements in the product development process and reduce time to market it is essential that the emerging technologies be sufficiently understood prior to product commitment. Today's leaner technology development teams are challenged not only to predict which of the many potential ideas will create killer products, but also insure that they are ready for product introduction. Increasing global competition and the rapid availability of information has decreased the window to evaluate potential options and tradeoffs, select the best solution and then implement the solution that enables the company to take advantage of a market opportunity. Companies with structured processes that enable teams to identify and focus on customer-valued innovations and rapidly drive them to commercialization will emerge as the market leaders. Outcome-based market research techniques were used to identify the criteria that engineering and business teams use to judge the value of new technologies. From this research, a technology maturity process was developed and implemented that selects which emerging technologies would create customer value, identifies the potential tradeoffs against program constraints, and drives the development of these technologies to meet the product and supply chain requirements.","PeriodicalId":106415,"journal":{"name":"IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003.","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124755944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

High reliability BGA package improvements on module total cost of ownership 高可靠性BGA封装改进模块总拥有成本

IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003. Pub Date : 2003-07-16 DOI: 10.1109/IEMT.2003.1225914

D. Alcoe, K. Blackwell, R. Rai

引用次数: 4

Modeling and simulation of 12.5 Gb/s on a HyperBGA/sup /spl reg// package 在HyperBGA/sup /spl reg//封装上12.5 Gb/s的建模与仿真

IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003. Pub Date : 2003-07-16 DOI: 10.1109/IEMT.2003.1225891

R.D. McBride, S. Rosser, R. P. Nowak

引用次数: 13

An acoustic sensor for monitoring microelectronics packaging manufacturing processes 一种用于监测微电子封装制造过程的声学传感器

IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003. Pub Date : 2003-07-16 DOI: 10.1109/IEMT.2003.1225873

F. Williams, S. Pinkett, W. Hunt, G. May

{"title":"An acoustic sensor for monitoring microelectronics packaging manufacturing processes","authors":"F. Williams, S. Pinkett, W. Hunt, G. May","doi":"10.1109/IEMT.2003.1225873","DOIUrl":"https://doi.org/10.1109/IEMT.2003.1225873","url":null,"abstract":"Since microelectronics fabrication processes require numerous steps, cost and yield are critical concerns. In-situ monitoring is vital for process control. However, this goal is restricted by the shortage of available sensors capable of performing in this manner. This paper proposes a silicon acoustic sensor to be used for in-situ monitoring of electrochemical or plasma deposition processes. The sensor was fabricated using common integrated circuit (IC) and micromachining techniques. Such techniques enable the creation of extremely thin beams and membranes, thus enabling devices to be highly sensitive to a measurand such as pressure. The sensing element of the microphone is a deflectable thin diaphragm composed of silicon and a piezoelectric material, zinc oxide (ZnO). The transduction operation is based on the piezoelectric effect, where a mechanical pressure applied to a polarized ZnO crystal results in a mechanical deformation. This resulting strain induces an electrical charge on the ZnO surface. To collect these surface charges on the sensor optimally, we implement segmented electrodes in the regions of greatest bending stress. The measured sensitivity of this sensor is 195 /spl mu/V//spl mu/bar.","PeriodicalId":106415,"journal":{"name":"IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003.","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124556280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Open architecture test system: the new frontier 开放式架构测试系统:新前沿

IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003. Pub Date : 2003-07-16 DOI: 10.1109/IEMT.2003.1225902

S. Perez, Y. Furukawa

引用次数: 7