An acoustic sensor for monitoring microelectronics packaging manufacturing processes

F. Williams, S. Pinkett, W. Hunt, G. May
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引用次数: 0

Abstract

Since microelectronics fabrication processes require numerous steps, cost and yield are critical concerns. In-situ monitoring is vital for process control. However, this goal is restricted by the shortage of available sensors capable of performing in this manner. This paper proposes a silicon acoustic sensor to be used for in-situ monitoring of electrochemical or plasma deposition processes. The sensor was fabricated using common integrated circuit (IC) and micromachining techniques. Such techniques enable the creation of extremely thin beams and membranes, thus enabling devices to be highly sensitive to a measurand such as pressure. The sensing element of the microphone is a deflectable thin diaphragm composed of silicon and a piezoelectric material, zinc oxide (ZnO). The transduction operation is based on the piezoelectric effect, where a mechanical pressure applied to a polarized ZnO crystal results in a mechanical deformation. This resulting strain induces an electrical charge on the ZnO surface. To collect these surface charges on the sensor optimally, we implement segmented electrodes in the regions of greatest bending stress. The measured sensitivity of this sensor is 195 /spl mu/V//spl mu/bar.
一种用于监测微电子封装制造过程的声学传感器
由于微电子制造过程需要许多步骤,成本和产量是关键问题。现场监测对过程控制至关重要。然而,这一目标受到能够以这种方式执行的可用传感器短缺的限制。本文提出了一种用于电化学或等离子体沉积过程现场监测的硅声传感器。该传感器采用通用集成电路(IC)和微加工技术制造。这种技术可以制造极薄的光束和薄膜,从而使设备对压力等测量具有高度敏感性。麦克风的传感元件是由硅和压电材料氧化锌(ZnO)组成的可偏转薄膜片。转导操作是基于压电效应,其中施加在极化ZnO晶体上的机械压力导致机械变形。由此产生的应变在ZnO表面诱导出电荷。为了在传感器上最佳地收集这些表面电荷,我们在最大弯曲应力区域实现了分段电极。该传感器的实测灵敏度为195 /spl μ /V//spl μ /bar。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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