Micro and Nanostructures最新文献

{"title":"VO2-Graphene based four-state ultra-wideband terahertz metamaterial with switchable absorption, reflection, and transmission","authors":"Jian Shen,&nbsp;Han Li,&nbsp;Xuejun Qiu,&nbsp;Junjiao Lu,&nbsp;Yi Wang,&nbsp;Chengzhi Jin","doi":"10.1016/j.micrna.2025.208143","DOIUrl":"10.1016/j.micrna.2025.208143","url":null,"abstract":"<div><div>A multifunctional ultra-wideband (UWB) terahertz (THz) metamaterial device based on VO₂ and graphene is proposed, capable of achieving tunable and switchable high-frequency absorption broadband (HFBA)/low-frequency broadband absorption (LFBA)/reflection/transmission in the THz band. The mechanism is clearly explained by impedance matching theory, the electric field strength distributions (EFSDs) and equivalent simplified model. Based on the simulation results, the localized surface plasmon resonance (LSPR) of the patterned graphene reaches LFBA above 90 % between 2.42 and 4.83 THz, and the absorptivity can be changed from 19 % to 99 % by varying the graphene's Fermi level. The electric and magnetic resonances produce HFBA with an adjustable absorption amplitude between 17 % and 98 % in the 3.02–7.86 THz range by controlling the conductivity of the annular VO₂. In addition, reflection and transmission can be adjusted between 0 % and 80 %. The proposed metamaterial device exhibits strong polarization- and angle-of-incidence-independent properties, ensuring its stable application in intelligent absorption and electromagnetic shielding.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"203 ","pages":"Article 208143"},"PeriodicalIF":2.7,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143627856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Aharonov-Bohm Effect and Rotation : Assessing the Effective Complex Dielectric Function in a Rotating 2D Quantum Ring","authors":"A. Naifar ,&nbsp;K. Hasanirokh","doi":"10.1016/j.micrna.2025.208145","DOIUrl":"10.1016/j.micrna.2025.208145","url":null,"abstract":"<div><div>Research into spinning systems is actively pursued across diverse fields within physics. This study explores the influence of an electron angular motion within two-dimensional quantum ring (2D-QR). Particular attention is given to the interplay between the Aharonov-Bohm (AB) impact and a constant-field magnetic environment. Utilizing the Schrödinger equation with minimal coupling, we introduce an effective four-potential to account for the system's rotational effects and derive the corresponding equations of motion. Additionally, a radial potential term, dependent on the average ring radius, is incorporated to further refine the analysis. By employing a standard iterative procedure, the analytical formula for the effective complex dielectric function (ECDF) is derived and its associated real and imaginary components are probed in response to various external perturbations. Varying the rotational metric significantly alters the electron cloud, leading to a centrifugal outcome that drives particle localization towards the edges of the ring. Regarding the imaginary part of ECDF, a remarkable asymmetry is observed in the system's response to frequency shifts. While a positive frequency excursion from 0 to 80 THz leads to a significant attenuation of the amplitude (reduced by a factor of 1.67), an analogous negative frequency shift (from 0 to -55 THz) produces an unexpected intensification with the amplitude increasing by a factor of 1.5. In addition, we found that a minimal alteration in the phase ϕ leads to a discernible jump in the peak amplitudes and a concomitant shift in their positions along the energy axis. In case of <em>Ω</em> = -30 THz, the photobleaching effect, resulting from the destructive interference occurring between the linear (<span><math></math></span> and nonlinear (<span><math></math></span> components, is slightly delayed even at I=1.5 MW/cm². Specific instruments, such as spectroscopic ellipsometers, intensity-controlled laser systems, and angle-resolved optical spectrometers, could benefit from our numerical exploration to further enhance their performance.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"203 ","pages":"Article 208145"},"PeriodicalIF":2.7,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143631846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strained bipolar charge plasma transistor as a high speed LIF neuron","authors":"Priyanka ,&nbsp;Sangeeta Singh ,&nbsp;Meena Panchore","doi":"10.1016/j.micrna.2025.208127","DOIUrl":"10.1016/j.micrna.2025.208127","url":null,"abstract":"<div><div>For Neuromorphic computing and bio realistic dynamics, distinct CMOS devices have been carried out. But most devices used for developing artificial synapses and mimicking the LIF neuronal dynamics suffer from high power dissipation, low operating speed, and high cost of hardware implementation. In this work, leaky integrate and fire neural are implemented using a strained bipolar charge plasma transistor based on a floating body mechanism. For the first time, strained BCPT neuron is demonstrated to mimic biological behavior which provides an inherently low-energy, cost-effective, and easy implementation of the neuron. The strained BCPT based neuron exhibits maximum spiking energy of 196 aJ which is 1.53 <span><math><mo>×</mo></math></span> 10<span><math><msup><mrow></mrow><mrow><mn>5</mn></mrow></msup></math></span>, 1.79 <span><math><mo>×</mo></math></span> 10<span><math><msup><mrow></mrow><mrow><mn>5</mn></mrow></msup></math></span>, 5.1 <span><math><mo>×</mo></math></span> 10<span><math><msup><mrow></mrow><mrow><mn>4</mn></mrow></msup></math></span>, 2.9 <span><math><mo>×</mo></math></span> 10<span><math><msup><mrow></mrow><mrow><mn>4</mn></mrow></msup></math></span>, 32.1, 16.4, 1.28 <span><math><mo>×</mo></math></span> 10<span><math><msup><mrow></mrow><mrow><mn>3</mn></mrow></msup></math></span>, 918, 5820, 14.8 times less as compared to phase change CMOS, SOI CMOS, PCMO CMOS, Biristor, Bulk FinFET, PD SOI CMOS based on BTBT, FBFET, LBIMOS, DGJLFET, and Silicon nanowire. This work also investigates the effect of temperature, base width, germanium mole fraction, and metal electrode work function. The collector potential of 0.30 V is enough to produce a threshold spike current of 8 <span><math><mrow><mi>r</mi><mi>m</mi><mi>μ</mi></mrow></math></span>A/<span><math><mrow><mi>μ</mi><mi>m</mi></mrow></math></span> which is 9.33, 10, 2.66, 5, 6.66, and 1.33 times less as compared to SOI CMOS, Bulk FinFET, Si NIPIN, PD SOI MOS, LBIMOS, and DGJLFET, respectively. Here, the strained BCPT floating body is responsible for the accumulation of holes generated by impact ionization (II). The proposed neuron device demonstrates the basic function of LIF dynamics at 12 GHz frequency using the SILVACO 2D TCAD simulation tool. Hence, this work provides the possibility of easy fabrication of highly-integrated SNN at high operating speed and low-energy consumption.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"203 ","pages":"Article 208127"},"PeriodicalIF":2.7,"publicationDate":"2025-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143631847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring the optimized Ge/Si heterostructure extended source (ES) Fin-TFETs for improved DC and analog performance","authors":"B.V. Rao ,&nbsp;Arun Kumar ,&nbsp;Brinda Bhowmick","doi":"10.1016/j.micrna.2025.208133","DOIUrl":"10.1016/j.micrna.2025.208133","url":null,"abstract":"<div><div>Tunnel Field-Effect Transistors (TFETs) have been recognized as a potential alternative for low-power switching devices because of their ability to achieve a superior subthreshold swing (SS) compared to traditional MOSFETs. Nevertheless, point tunneling-based TFETs have major issues, such as reduced on-current (I_on) and elevated SS, which limit their practical application. These issues stem from restricted tunneling space and an inefficient tunneling direction. To overcome these limitations, this work introduces an Extended Source Fin-TFET (ES Fin-TFET) architecture utilizing a Ge/Si heterostructure. The device achieves significant performance improvements by combining point tunneling at the source-channel hetero-junction and line tunneling in the extended source region. The proposed ES Fin-TFET exhibits a high on-current of 1.25 × 10⁻⁵ A while maintaining a low off-current of 1.35 × 10⁻¹⁷ A. The device further demonstrates exceptional DC characteristics, including a threshold voltage (V_T) of 0.28 V, a high on-off current ratio exceeding ∼1 × 10¹², and an average subthreshold slope of 23 mV/decade. Additionally, AC performance analysis of the proposed device reveals a transconductance of 2.5 × 10⁻⁵ S, a gain-bandwidth product of 1.6 × 10¹⁰ Hz, a cut-off frequency of 4.5 × 10¹⁰ Hz, and a transconductance generation factor of 6.9 × 10⁵ V⁻¹, demonstrating its potential for high-performance analog and RF applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"203 ","pages":"Article 208133"},"PeriodicalIF":2.7,"publicationDate":"2025-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143609290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Topological ring resonator for refractive index sensing at telecommunication wavelength","authors":"Zaiyue Yang ,&nbsp;HongMing Fei ,&nbsp;Min Wu ,&nbsp;Han Lin","doi":"10.1016/j.micrna.2025.208131","DOIUrl":"10.1016/j.micrna.2025.208131","url":null,"abstract":"<div><div>Ring resonators play an increasingly important role in biomedical sensing. Conventional optical ring resonators based on waveguide structures have some problems, such as large size, limited integrated density, and easily influenced by external factors. Therefore, it is desired to evoke new design principles to achieve ultracompact biomedical sensors with high performance. Here, we demonstrated topological refractive index sensors based on valley photonic crystal (VPC) ring resonator structures working at telecommunication wavelength and whose resonant peaks move in response to the surrounding material's refractive index change. The structure is designed to work in an aqueous solution (refractive index of 1.33), and within the sensing range of 1.33–1.45, it has a phase shift of 4.16π and a detection sensitivity of 208.09 nm/RIU (refractive index unit) with a detectable refractive index difference of 0.0044. In addition to the single-ring resonator structure, we further tune the free spectral range (FSR) by combining ring resonators with different sizes, and the sensitivity is tuned accordingly. The designed structures are suitable for the current mature complementary metal-oxide-semiconductor (CMOS) nanofabrication technique. In addition, the refractive index sensor can also be applied as a mechanism for tuning the resonant peaks for optical modulations.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"202 ","pages":"Article 208131"},"PeriodicalIF":2.7,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance investigation of vertical TFET biosensor based on dual-source dual-channel trench gate","authors":"Xingyu Wei,&nbsp;Hujun Jia,&nbsp;Linna Zhao,&nbsp;Qiyu Su,&nbsp;Weitao Cao,&nbsp;Wanli Yang,&nbsp;Zhen Cao,&nbsp;Yintang Yang","doi":"10.1016/j.micrna.2025.208129","DOIUrl":"10.1016/j.micrna.2025.208129","url":null,"abstract":"<div><div>In this paper, a dielectric modulated Vertical TFET Biosensor Based on Dual-source Dual-channel Trench Gate is proposed. It is compared with an embedded source TFET (ES-TFET) biosensor by computer-aided design (TACD). Various aspects such as switching ratio, transconductance, saturation current and sensitivity are analyzed. It is concluded that the DSDC-TG-TFET electrical characteristics and sensitivity is superior to that of the ES-TFET. Upon <em>K</em> = 10, <em>S</em>_<em>Ion</em> = 1.86✕10⁷, <em>S</em>_{<em>Ion/Ioff</em>} = 1.84✕10⁷ and <em>S</em>_<em>gm</em> = 1.62✕10⁷.The characteristics mentioned are 2.09✕10⁵ times, 2.12✕10⁵ times and 2.33✕10⁵ times better than ES-TFET, respectively. In addition, this paper also perform noise analysis and linearity analysis for DSDC-TG-TFET. All device simulations were performed in TCAD environment with well-calibrated structure.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"202 ","pages":"Article 208129"},"PeriodicalIF":2.7,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization of pocket doped SOI TFET and analysis of interfacial trap charges","authors":"S. Kumari,&nbsp;B.S. Saranya,&nbsp;S.M. Joseph,&nbsp;K. Vanlalawmpuia","doi":"10.1016/j.micrna.2025.208134","DOIUrl":"10.1016/j.micrna.2025.208134","url":null,"abstract":"<div><div>This paper investigates the optimization of various parameters in the design of silicon-on-insulator (SOI) tunnel field-effect transistor (TFET) with pocket doping (PD-SOI TFET). By performing comprehensive simulations using Sentaurus TCAD and incorporating appropriate models, we systematically studied the effects of optimizing channel length (L_CH), channel thickness (t_CH), oxide thickness (t_ox), pocket doping length (L_PD), pocket doping material (PD_m), and source/channel material. Our results show that there is an optimal design parameter for a channel length of 40 nm, a channel thickness of 10 nm, an oxide thickness of 2 nm, a pocket doping length of 2 nm, and the pocket doping material like germanium (Ge). Using Si as the source and Ge as the channel material, the device shows better performance. Additionally, the optimized PD-SOI TFET's interface trap charges have been studied. The existence of interface traps has an impact on the device's performance. In comparison to negative ITCs, positive ITCs provide higher electron band-to-band generation rate (eBTBT). For positive ITCs, the electric field yields larger values in the normal component, and for negative ITCs, higher values in the parallel component. The subthreshold slope degrades for positive ITCs and slightly reduces for negative ITCs. Further, the device’s performance is analyzed through studying the impact of interface traps on various analog/RF parameters including the Total gate capacitance (C_gg), Gate to source capacitance (C_gs), Gate to drain capacitance (C_gd), transconductance (g_m), and cut-off frequency (f_T). Also, the linearity and distortion parameters have been analyzed in form of VIP2, VIP3, IIP3 and IMD3.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"202 ","pages":"Article 208134"},"PeriodicalIF":2.7,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143592996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative fabrication and performance of metal-semiconductor-metal and heterojunction near-infrared photodetectors using Ag-modified porous silicon","authors":"Sayran A. Abdulgafar ,&nbsp;Mohammed A. Ibrahem ,&nbsp;Lary H. Slewa","doi":"10.1016/j.micrna.2025.208130","DOIUrl":"10.1016/j.micrna.2025.208130","url":null,"abstract":"<div><div>The demand for advanced near-infrared (NIR) photodetectors has surged due to their applications in imaging, communications, and environmental monitoring. This study examines the photoelectric properties of porous silicon (PSi)-based NIR photodetectors modified with silver nanoparticles (AgNPs) in two configurations: metal-semiconductor-metal (MSM) (Au/AgNPs-PSi/Au) and heterojunction (Au/AgNPs-PSi/Si/Al). Device performance was evaluated via current-voltage characteristics under dark and illuminated conditions (850 nm, 20 W/cm²). At 5 V, the heterojunction detector achieved a sensitivity of 20.6 × 10² % and a responsivity of 1.8 mA/W, outperforming the MSM device (3.15 × 10² %, 1.48 mA/W). This enhancement is attributed to the built-in electric field at the junction, which promotes efficient carrier separation, and the optimized AgNP–PSi morphology that enhances light absorption. Additionally, the heterojunction device demonstrated faster rise and fall times, indicating improved carrier transport dynamics. This study provides insight into the design of high-performance NIR photodetectors using modified PSi and highlights the potential of heterojunction configurations for improved photodetection.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"202 ","pages":"Article 208130"},"PeriodicalIF":2.7,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimisation of Ion/Ioff and transconductance of germanium based dual metal gate hetero-dielectric TFET","authors":"D. Gracia ,&nbsp;D. Jackuline Moni ,&nbsp;D. Nirmal","doi":"10.1016/j.micrna.2025.208128","DOIUrl":"10.1016/j.micrna.2025.208128","url":null,"abstract":"<div><div>This simulation study delves in to the exploration of Tunnel Field Effect Transistors (TFET) with Dual Metal Gate (DMG) hetero-dielectric structure incorporating a Germanium channel using simulations study in TCAD. The device efficiency measures such as current in the off-state (I_off), on-state current (I_on), switching efficiency of the current (I_on/I_off) are observed for the proposed device. The metrics are taken in comparison with the traditional DMG hetero-dielectric MOSFET. The recommended device exhibits a 74.8 % reduction in the Subthreshold Slope (SS) compared to the traditional DMG hetero-dielectric MOSFET. An enhanced I_on/I_off ratio of 4.669 × 10⁸for Ge channel TFET is observed over a conventional DMG MOSFET simulated under same environmental conditions. The performance analysis has been carried out for various channel thickness (t_ch), oxide thickness (t_ox), tunneling lengths (L1:L2) and different gate metal work functions. A detailed RF analysis for hetero dielectrics with HfO₂ near the source area and SiO₂ near the drain area is carried out for DMG Hetero Dielectric TFET. It is evident that positioning the low-k dielectric in close proximity to the drain region leads to the suppression of parasitic capacitances such as C_gd and C_gg. This characteristic enhances its suitability as a superior aspirant for nano digital applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"202 ","pages":"Article 208128"},"PeriodicalIF":2.7,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143571478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Device and circuit-level assessment of temperature variation on the DC, Analog/RF and linearity performance metrics of III-V TFETs for reliability","authors":"Priyanka Verma,&nbsp;Satyendra Kumar","doi":"10.1016/j.micrna.2025.208114","DOIUrl":"10.1016/j.micrna.2025.208114","url":null,"abstract":"<div><div>This article presents a comprehensive comparative analysis of GaSb/Si Dual Material Stacked Double Gate Hetero Junction TFET (GaSb/Si DMSDG HJTFET) and <span><math><mrow><mi>G</mi><msub><mrow><mi>a</mi></mrow><mrow><mn>0</mn><mo>.</mo><mn>5</mn></mrow></msub></mrow></math></span> <span><math><mrow><mi>A</mi><msub><mrow><mi>s</mi></mrow><mrow><mn>0</mn><mo>.</mo><mn>5</mn></mrow></msub></mrow></math></span>Sb/<span><math><mrow><mi>I</mi><msub><mrow><mi>n</mi></mrow><mrow><mn>0</mn><mo>.</mo><mn>7</mn></mrow></msub></mrow></math></span> <span><math><mrow><mi>G</mi><msub><mrow><mi>a</mi></mrow><mrow><mn>0</mn><mo>.</mo><mn>3</mn></mrow></msub></mrow></math></span>As Ferroelectric Dual Material Stacked Double Gate Hetero Junction TFET (FDMSDG-HJTFET) at device-level as well as circuit-level under the influence of temperature variation for the first time. In this work, the effects of temperature variation in the range of 300 K to 420 K have been accounted. Here, the DC electrical parameters, analog/RF and linearity parameters of both devices have been investigated using Silvaco TCAD tool. Further, the impact of temperature variation on the performance at the circuit level is carried out through a resistive-load inverter with GaSb/Si DMSDG-HJTFET and FDMSDG-HJTFET, evaluating their DC and transient characteristics using HSPICE. The simulation results reveal that the FDMSDG-HJTFET device is more immune to temperature variations, in contrast to GaSb/Si DMSDG-HJTFET. Thus, it can be utilized for low-power, analog/RF and high-temperature applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"202 ","pages":"Article 208114"},"PeriodicalIF":2.7,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143580647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}