Analysis and performance improvement of short channel effects in MoSe2/WSe2 heterostructure MOSFETs

Abstract

As MOSFET miniaturization reaches physical limits, this work explores advancements to address scaling challenges. This work proposes hafnium dioxide (HfO₂) as a high-k gate dielectric for thinner layers and reduced power consumption. Additionally, SiO₂ spacers are investigated to address reliability concerns with air spacers in MOSFETs. Finally, to combat short channel effects that plague traditional materials like silicon, this research explores MoSe₂/WSe₂ Transition Metal Dichalcogenide (TMD) heterostructures due to their unique properties, aiming to contribute to MOSFET design advancements by mitigating these effects and enhancing overall device performance and reliability. The MOSFET is designed and simulated in TCAD Silvaco and achieves a SS of 57 mV/dec and a DIBL of 58 mV/V, demonstrating effective mitigation of short-channel effects.