Micro and Nanostructures最新文献

{"title":"Optimization of efficiency of CsPbI2Br by using different electron transport and hole transport layers: A DFT and SCAPS-1D simulation","authors":"Mukaddar Sk","doi":"10.1016/j.micrna.2024.208024","DOIUrl":"10.1016/j.micrna.2024.208024","url":null,"abstract":"<div><div>In this article, we embark on an exciting journey to identify the ideal electron transport layers (ETL) and hole transport layers (HTL) that can significantly boost the efficiency of CsPbI₂Br-based solar cells. Utilizing first-principles calculations with the modified Becke-Johnson potential (mBJ) and spin-orbit correction, we uncovered the direct band gap property of CsPbI₂Br, measuring an impressive 1.81 eV. Coupled with its remarkable absorption coefficient of 10⁵ cm⁻¹ and minimal reflectivity throughout the visible spectrum, this material stands out as an emerging absorber layer for photovoltaic cells. Also, using cutting-edge SCAPS-1D simulations, we explore a range of ETL materials, including TiO₂, ZnO, CdS, STO, WS₂, and Nb₂O₅, alongside HTL options like NiO, Spiro, SnS, CuI, Cu₂O, and CuSbS₂. Our findings reveal that Nb₂O₅ and Cu₂O emerge as the most promising candidates for ETL and HTL to enhance the performance of CsPbI₂Br absorbers, opening the door to more efficient solar energy solutions. The efficiencies achieved with the ETL and HTL-based solar cells, specifically Au/CsPbI₂Br/Nb₂O₅/FTO and Au/Cu₂O/CsPbI₂Br/FTO, are impressive, standing at 17.91 % and 18.13 %, respectively. Moreover, various factors such as the thickness of the absorbing layer, HTL, and ETL, along with total defect density (N_t), donor and acceptor defect densities of both the absorber and the transport layers, and the device temperature, significantly influence the performance metrics of the Au/Cu₂O/CsPbI₂Br/Nb₂O₅/FTO solar cell. Our findings reveal impressive values: a maximum open-circuit voltage (V_oc) of 1.21 V, a short-circuit current (J_sc) of 32.47 mA/cm², a fill factor of 87.7 %, and an efficiency (η) of 22.31 %. These findings exceed the previously reported values for halide perovskite based solar cells, underscoring the promise of this research in shaping the future of cutting-edge perovskite-based solar cells.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"197 ","pages":"Article 208024"},"PeriodicalIF":2.7,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142656163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"The effect of MoS2 modified with transition metal (Fe, Co, Ni, Cu) on H2O adsorption: A first principle study","authors":"Shengxu Zhao ,&nbsp;Yue Yuan ,&nbsp;Yue Feng ,&nbsp;Xin Liu ,&nbsp;Chi Liu ,&nbsp;Shaozhi Pu ,&nbsp;Tao Shen","doi":"10.1016/j.micrna.2024.208021","DOIUrl":"10.1016/j.micrna.2024.208021","url":null,"abstract":"<div><div>MoS₂ has great potential as a humidity sensor, and doping is considered the most promising method to enhance the adsorption of H₂O molecule by MoS₂. Unfortunately, vacancy doping sacrifices the stability of the material while enhancing adsorption efficiency. Here, we use Fe, Co, Ni, Cu to modify the surface of MoS₂ and study the adsorption characteristics of H₂O molecule on MoS₂ before and after modification. The first principles calculations further indicate that partial transition metal (TM) doping can induce spin polarization in MoS₂. Spin polarization further enhances orbital hybridization between atoms, thereby improving adsorption performance. On the basis of qualitative analysis of thermodynamic stability and electrical properties, quantitative analysis was conducted on adsorption energy and charge transfer. The results indicate that the adsorption energy, in descending order, is Fe–MoS₂ &gt; Co–MoS₂ &gt; Ni–MoS₂ &gt; Cu–MoS₂ &gt; MoS₂. Compared with MoS₂, Fe–MoS₂ has the best adsorption effect among the four doping systems, with an adsorption energy increase of 22.1 times. Importantly, simulations of desorption time have demonstrated that Fe–MoS₂ and Co–MoS₂ exhibit a significant reduction in desorption time with increasing temperature and can be rapidly recycled.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"197 ","pages":"Article 208021"},"PeriodicalIF":2.7,"publicationDate":"2024-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142656162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Linearity analysis of FE-based graded channel junctionless FET obtaining negative capacitance for low power applications","authors":"Ankush Chattopadhyay","doi":"10.1016/j.micrna.2024.208013","DOIUrl":"10.1016/j.micrna.2024.208013","url":null,"abstract":"<div><div>This paper reports ferroelectric (FE) oxide based graded-channel junctionless FET featuring the negative capacitance effects in nano-scale regime. The linearity nature of its response is analyzed on the basis of third order interception point (<span><math><msub><mrow><mi>P</mi></mrow><mrow><mi>I</mi><mi>P</mi><mn>3</mn></mrow></msub></math></span>), harmonic interception voltages of 2nd and 3rd orders (<span><math><mrow><mi>V</mi><mi>I</mi><msub><mrow><mi>P</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span>, <span><math><mrow><mi>V</mi><mi>I</mi><msub><mrow><mi>P</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span>) and intermodulation distortion (<span><math><mrow><mi>I</mi><mi>M</mi><msub><mrow><mi>D</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span>). Influence of fundamental device’s parameters such as, gate and underlap length, ferroelectric oxide thickness, graded channel doping and operating temperature on its linear behavior is observed and analyzed in detail. The subthreshold slope is also found to go below 60mV/dec for optimum features, obtaining the NC characteristics. In its circuit application part, a cascode amplifier is designed using the proposed device showing variations due to the change in the proposed device dimensions. The proposed device is designed and simulated using Silvaco ATLAS device simulator, which is calibrated with the available experimental results. Therefore, the present study is quite relevant in recent days for low power analog applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"196 ","pages":"Article 208013"},"PeriodicalIF":2.7,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142653509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Triple independently tunable sensing with multiple resonances based on metal-insulator-metal waveguide","authors":"Yongpeng Ren,&nbsp;Desheng Qu,&nbsp;Yiping Sun,&nbsp;Fumeng Qin,&nbsp;Chunlei Li","doi":"10.1016/j.micrna.2024.208019","DOIUrl":"10.1016/j.micrna.2024.208019","url":null,"abstract":"<div><div>In this study, a novel plasmonic refractive index sensor is proposed, featuring a metal–insulator–metal (MIM) waveguide coupled with a composite cavity structure consisting of a double-arc rectangle cavity, a bridge cavity and a three-half-ring configuration cavity. Finite element simulations are used to analyze the transmission characteristics and magnetic field distributions. The results show that six resonance peaks can be produced by three independent resonators. Moreover, there is a good linear relationship between these resonance wavelengths and the structural parameters of the resonators. Then, the refractive index sensing performances of the structure are analyzed by changing the refractive index of the medium within the resonator. The highest sensitivities of the peaks in their resonators are 1732, 2800 and 4568 nm/RIU, respectively. In addition, the proposed structure is tested for the simultaneous detection of the peanut oil concentration of three different blended oils: soybean-peanut, peanut-rapeseed and peanut-sunflower. The ability of the sensor to accurately and simultaneously measure these different oil mixtures highlights its potential for biochemical sensing.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"196 ","pages":"Article 208019"},"PeriodicalIF":2.7,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142653510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Novel power MOSFET with drain-side N–Si/N-SiGe heterojunctions for improving reverse recovery performance","authors":"Qisheng Yu,&nbsp;Jiaweiwen Huang,&nbsp;Zhigang Shen,&nbsp;Wensuo Chen","doi":"10.1016/j.micrna.2024.208018","DOIUrl":"10.1016/j.micrna.2024.208018","url":null,"abstract":"<div><div>—A novel power MOSFET structure with Drain-side N–Si/N-SiGe Heterojunctions (DH-MOS) is proposed by introducing a N SiGe region which is sandwiched between the N-drift region and N+ substrate on the drain side. The operation mechanism and simulation verification of DH-MOS are presented. Due to the difference in valence band of N Si/N SiGe heterojunction, holes can be more easily expelled from the N-drift region into N SiGe region during the reverse conduction of DH-MOS, resulting in a significant reduction in hole density inside the N-drift region, thus improving the reverse recovery performance. Simulation results show that the reverse recovery charge (Qrr) of DH-MOS is 2.08 μC/cm², approximately 66.34 % lower than the 6.18 μC/cm² of conventional MOS. The introduction of new DH-MOS structure with N–Si/N-SiGe heterojunctions does not result in a significant increase in reverse conduction voltage (VF). In addition, it does not sacrifice any forward conduction and blocking characteristics. The proposed DH-MOS introduces changes on the drain side, unlike existing methods which focus on the source side or drift region. And it can be compatible with existing improving measures to further improve the reverse recovery performance.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"196 ","pages":"Article 208018"},"PeriodicalIF":2.7,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142653508","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"TCAD simulation on an UACCUFET inserted with 3C/4H–SiC hetero-crystalline junctions for accumulation-channel and fly-back","authors":"Jingyang Ding,&nbsp;Wensheng Wei,&nbsp;Jianbing Ji","doi":"10.1016/j.micrna.2024.208017","DOIUrl":"10.1016/j.micrna.2024.208017","url":null,"abstract":"<div><div>Due to high channel mobility, SiC accumulation-channel field-effect transistors (ACCUFETs) exhibit important research and application values in high-frequency and large-power fields, but still encounter poor reverse recovery, etc. An enhancement-mode U-shaped gate ACCUFET integrated with 3C/4H–SiC hetero-crystalline junctions (HCJs) and semi-super-junction (SSJ) is constructed, where a (n⁻)4H–SiC-layer in (n)3C–SiC/(n⁻)4H–SiC HCJ is adopted to form accumulation-channel for conduction due to field-effect, another HCJ composed of (n)3C–SiC and (n)4H–SiC drift region is employed for fly-back under low cut-in voltage (<em>V</em>_F) to shorten reverse recovery time (<em>t</em>_rr). Additionally, a SSJ is used to raise the breakdown voltage (<em>V</em>_B). The device structure and performance are optimized by the Silvaco TCAD, which illustrates the values of <em>V</em>_B and static figure of merit (<em>FOM</em>_HM) are increased by 15.6 % and 5.6 % respectively compared to those of the counterpart with Schottky barrier diode. This paper can provide new ideas for devising high-performance ACCUFETs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"196 ","pages":"Article 208017"},"PeriodicalIF":2.7,"publicationDate":"2024-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142653511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study and analysis of a dielectric-modulated vertical tunnel FET biosensor using dual material gate","authors":"Haiwu Xie ,&nbsp;Yankun Wang ,&nbsp;Yongbo Liao","doi":"10.1016/j.micrna.2024.208016","DOIUrl":"10.1016/j.micrna.2024.208016","url":null,"abstract":"<div><div>A bimetal gate heterogeneous dielectric vertical tunnel field-effect transistor (BG-HD-VTFET) biosensor has been investigated in this paper for the first time using engineered-gate concept, where nanogaps are introduced under tunnel gate (TG) to detect biomolecules near the device surface. To improve the detection performance of BG-HD-VTFET, an overlap is designed between source and pocket region, and the sensing ability of BG-HD-VTFET with and without overlap is compared in details. Further, an auxiliary gate (AG) is added for the proposed two devices to optimize the electrical characteristics, and the y composition of GaAs_ySb_1-y in pocket region is optimized to enhance ON-state current, and then different neutral and charged biomolecules are considered to simulate device-level gate effects. In addition, the influence of different dielectric constant at fixed charge density is studied and the length of overlap is optimized. Simulation results show that the maximum sensitivity of BG-HD-VTFET with and without overlap can reach 3.3 × 10³ and 1.9 × 10³, respectively.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"196 ","pages":"Article 208016"},"PeriodicalIF":2.7,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142653502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing the performance of Ga2O3 FinFETs through double fin channels and buried oxide","authors":"Priyanshi Goyal,&nbsp;Harsupreet Kaur","doi":"10.1016/j.micrna.2024.208014","DOIUrl":"10.1016/j.micrna.2024.208014","url":null,"abstract":"<div><div>In this study, double fin channels and buried oxide has been implemented on Ga₂O₃ FinFET. Exhaustive simulations have been performed to study the performance of the proposed device and its comparison has been drawn with the device with only double fin channels without buried oxide, and the conventional FinFET. Various device characteristics such as output and transfer characteristics etc., have been studied and several figure of merits (FoMs) such as transconductance, parasitic capacitances, gain bandwidth product, intrinsic delay etc., have also been obtained. Further, the inverter has been designed using all the devices under consideration. It has been demonstrated that the inverter using the proposed device exhibits excellent characteristics in terms of significant improvement in key metrics such as noise margin, transient response etc., as compared to the inverter using conventional devices. The current study also lays the groundwork for designing various high-performance circuits for ultra-high frequency applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"196 ","pages":"Article 208014"},"PeriodicalIF":2.7,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142593219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Two-dimensional Sc2O3 monolayer with tunable ultrawide bandgap for solar-blind ultraviolet photodetector","authors":"Bo Meng ,&nbsp;Wen-Zhi Xiao","doi":"10.1016/j.micrna.2024.208012","DOIUrl":"10.1016/j.micrna.2024.208012","url":null,"abstract":"<div><div>A novel 2D scandia (Sc₂O₃) monolayer was identified using an evolutionary algorithm-based crystal structure prediction method. The Sc₂O₃ monolayer exhibits a <span><math><mrow><mi>P</mi><mover><mn>3</mn><mo>‾</mo></mover><mi>m</mi><mn>1</mn></mrow></math></span> symmetry and excellent energetic, thermal, dynamical, and mechanical stability, as well as good mechanical flexibility. The monolayer possesses an ultrawide indirect band gap of 6.246 eV. The monolayer is transparent in the visible light zone, while the large exciton effect leads to significant absorption in the solar-blind and vacuum ultraviolet regions. The band gap of this monolayer can be reduced monotonically by external biaxial tensile strain, resulting in the absorption spectrum covering the entire solar blind spectral region when the load reaches 5.0 %. Additionally, the monolayer has an ultra-high in-plane dielectric constant of approximately 50. The superior stability, flexibility, and strain-tunable electronic and optical properties, as well as the ultra-high dielectric constant, suggest its potential application in a solar-blind photodetector in harsh environments.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"196 ","pages":"Article 208012"},"PeriodicalIF":2.7,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142586433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of random ferroelectric and dielectric phase distributions on junctionless ferroelectric field effect transistors","authors":"Honglei Huo,&nbsp;Weifeng Lü,&nbsp;Yubin Wang,&nbsp;Shuaiwei Zhao,&nbsp;Xinfeng Zheng","doi":"10.1016/j.micrna.2024.207997","DOIUrl":"10.1016/j.micrna.2024.207997","url":null,"abstract":"<div><div>In this study, we comprehensively investigated the effects of random ferroelectric (FE) and dielectric (DE) phase distributions on junctionless ferroelectric field-effect transistors (JL-FeFETs). The Poisson–Voronoi tessellation (PVT) algorithm, which corresponds to the physical growth mechanism, was used to obtain grain nucleation in the ferroelectric layer. The simulation results demonstrated that as the probability of FE phase decreased from 80% to 40%, the standard deviation of the memory window (<span><math><msub><mrow><mi>σ</mi></mrow><mrow><mtext>MW</mtext></mrow></msub></math></span>) increased from 62.4 to 99.5 mV, and the possibility of forming a blocking current path from the source to the drain increased, which degraded the memory window (MW). The simulation results indicated that decreasing the gate length and width increased device variations. Furthermore, <span><math><msub><mrow><mi>σ</mi></mrow><mrow><mtext>MW</mtext></mrow></msub></math></span> decreased from 84.5 to 58.9 mV as the grain size decreased from 5 to 3 nm.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"196 ","pages":"Article 207997"},"PeriodicalIF":2.7,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142578212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}