Micro and Nanostructures最新文献

{"title":"Enhanced VOC sensing performance of MWCNT-CuO/ZnO nanocomposite based vertical TFET","authors":"Abdulrahman Saad Alqahtani ,&nbsp;Hashim Elshafie ,&nbsp;Azath Mubarakali ,&nbsp;M. Suresh Chinnathampy ,&nbsp;A. Alavudeen Basha ,&nbsp;P. Parthasarathy ,&nbsp;M. Venkatesh","doi":"10.1016/j.micrna.2025.208281","DOIUrl":"10.1016/j.micrna.2025.208281","url":null,"abstract":"<div><div>This study proposes a high-performance vertical tunnel field-effect transistor (VTFET)-based gas sensor incorporating a nanocomposite channel of multi-walled carbon nanotubes (MWCNTs) combined with CuO/ZnO bilayers. The design leverages the enhanced surface area, superior carrier transport, and strong gate coupling enabled by the vertical configuration to significantly improve gas detection sensitivity. The sensing mechanism is based on modulation of the drain current due to variations in the gate metal's work function upon exposure to volatile organic compounds (VOCs). These changes alter the surface potential and tunneling barrier, producing detectable shifts in the electrical characteristics without relying solely on threshold voltage modulation. Among the analytes examined, ethanol exhibited the highest sensitivity, with a 2.61 % increase in ON-current for a gate work function shift from 45 meV to 200 meV, followed by methanol (2.32 %) and acetone (2.12 %). The sensor achieves a steep subthreshold swing and an exceptionally high I_ON/I_OFF ratio of ∼10¹², indicating excellent switching behaviour and ultra-low leakage. It operates with a maximum threshold voltage of 0.8 V for ethanol detection and maintains low power consumption due to its efficient band-to-band tunneling process. The use of CMOS-compatible materials such as HfO₂, CuO, ZnO, and MWCNTs supports scalable fabrication and cost efficiency. These features make the proposed sensor a strong candidate for real-time VOC detection in various domains, including environmental monitoring, industrial safety, biomedical diagnostics, and automotive applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208281"},"PeriodicalIF":3.0,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144750246","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of temperature and defects on microstructure and mechanical properties of nano-silica/C–S–H composites","authors":"Jianlin He ,&nbsp;Chunwei Zhang ,&nbsp;Guili Liu","doi":"10.1016/j.micrna.2025.208278","DOIUrl":"10.1016/j.micrna.2025.208278","url":null,"abstract":"<div><div>Calcium silicate hydrate (C–S–H) is a primary source of concrete strength, and optimizing its properties is crucial for enhancing the durability of concrete. Nanosilica (NS) as a reinforcing phase can effectively improve the C–S–H properties; however, its actual efficacy is significantly affected by the service temperature and its defects, and the coupling mechanism between the two at the atomic scale remains unclear. In this study, molecular dynamics simulations were employed to systematically elucidate the mechanism of the synergistic effects of temperature (100 K–500 K) and three typical oxygen defects (V1, V2, and V3) on the interfacial structure and mechanical properties of NS/C–S–H composites. The results indicate that oxygen defects enhance the interaction of NS with water molecules, thereby increasing the material's hydrophilicity to a certain extent. However, this hydrophilicity gradually decreases with increasing temperature, especially at 400K and 500K. The radial distribution function (RDF) analysis reveals that an increase in temperature results in a decrease in the characteristic peaks of Oz-Ow and Si–Os, indicating that the interatomic distances have increased and the interactions have weakened. At 300 K, the tensile strength (1.590 GPa) and Young's modulus (30.872 GPa) of the NS/C–S–H composites were greater compared to those of the C–S–H gels. NS-V2 exhibits the highest tensile strength (1.773 GPa) at 300K. NS-V3, on the other hand, exhibits excellent tensile toughness and compression modulus in the 100K–200K and 400K–500K ranges. In contrast, NS-V1 has limited mechanical property enhancement. This study elucidates the mechanism of the multivariate coupling effect of temperature and oxygen defects on NS/C–S–H at the atomic scale. The findings provide a basis for optimizing the strength, modulus, and toughness of composites at different service temperatures (especially at medium and high temperatures), which is essential for the design of high-performance concretes for applications in extreme environments.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208278"},"PeriodicalIF":3.0,"publicationDate":"2025-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144739749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tailoring of the transfer characteristics of nanowire-based GAA-FETs through the channel defects and its effect on the energy-current spectrum","authors":"Aruna Gupta,&nbsp;Niladri Sarkar","doi":"10.1016/j.micrna.2025.208277","DOIUrl":"10.1016/j.micrna.2025.208277","url":null,"abstract":"<div><div>Studies are performed to investigate the effect of channel defects on the transfer and output characteristics of Nanowire-GAA-FETs. It is observed that the transfer characteristics can be tuned by invoking defect-induced scattering potential in the nanowire channel. Here, the channel scattering potentials chosen are step-shaped and pulse-shaped. The effect of such potentials on the energy-current spectrum of the nanowire device is also studied. It is observed that the normalized energy-current spectrum shrinks due to scattering potential. This results in the early triggering of the device saturation. Also, it is observed that the energy-current spectrum gets enhanced as the gate voltage of the device is increased. This signifies the role of channel currents of different energies in the transport mechanism. Here, the effect of channel defects on device saturation current is corroborated with the corresponding impact on the energy-current spectrum of the nanowire device. This work explains the implication of the modified energy-current spectrum under defect-induced scattering potentials and its effect on the device transfer characteristics. Hence, this idea can be extended to tailor the transfer characteristics through intentionally and unintentionally invoked channel defects on low-dimensional FETs. Also, we have studied the effect of defects on the transconductance, threshold voltage and the subthreshold swing of nanowires FETs. Here, we compared the simulated results with the experimental results of a real GAA-based biosensor.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208277"},"PeriodicalIF":3.0,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144763944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigating the effects of heavy-ion radiation on n-type Step Tunnelling Path TFET","authors":"Jatismar Saha ,&nbsp;Manosh Protim Gogoi ,&nbsp;Shreyas Tiwari ,&nbsp;Bijit Choudhuri ,&nbsp;Rajesh Saha","doi":"10.1016/j.micrna.2025.208269","DOIUrl":"10.1016/j.micrna.2025.208269","url":null,"abstract":"<div><div>This study investigates the impact of heavy-ion radiation on Step Tunneling Path (STP) TFET, focusing on charge deposition, device stability, and performance in radiation-intensive environments. Using Sentaurus TCAD simulations, the effects of heavy-ion generation are analysed at specific locations within the device 50, 100, 150, 200, and 230 nm from the source region. The analysis reveals that at linear energy transfer (LET) = 50 MeV-cm²/mg, the drain current (I_D) reaches approximately 28,000 μA, demonstrating a significant transient response due to increased charge deposition. The study also examines the effect of varying ion incidence angles (0°, 30°, 45°, 60°, and 90°) at constant LET of 20 MeV-cm²/mg. Results indicate that at 0° incidence angle, the drain current peaks at approximately 200,000 μA, emphasizing the critical role of impact geometry in radiation-induced device degradation. The findings confirm that heavy ions deposit more charge along their trajectory compared to alpha particles, leading to higher ionization densities and stronger transient effects. This research provides crucial insights into the radiation resilience of STP-TFETs, making them viable candidates for high-energy and space applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208269"},"PeriodicalIF":2.7,"publicationDate":"2025-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144680522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Sensitivity of resonant tunneling diodes to barrier variation and quantum well variation: A NEGF study","authors":"Pranav Acharya,&nbsp;Naveen Kumar,&nbsp;Ankit Dixit,&nbsp;Vihar Georgiev","doi":"10.1016/j.micrna.2025.208264","DOIUrl":"10.1016/j.micrna.2025.208264","url":null,"abstract":"<div><div>A Non-Equilibrium Green’s Function (NEGF) simulation study on the impact of varying barriers and quantum well (QW) for a double barrier GaAs/Al<span><math><msub><mrow></mrow><mrow><mtext>0.3</mtext></mrow></msub></math></span>Ga<span><math><msub><mrow></mrow><mrow><mtext>0.7</mtext></mrow></msub></math></span>As Resonant Tunneling Diode (RTD) was carried out. This includes both variation of section thicknesses and the inclusion of interface roughness (IR) at different GaAs/Al<span><math><msub><mrow></mrow><mrow><mtext>0.3</mtext></mrow></msub></math></span>Ga<span><math><msub><mrow></mrow><mrow><mtext>0.7</mtext></mrow></msub></math></span>As interfaces. Narrower QWs and thinner symmetric barriers both resulted in a perturbation of Negative Differential Region (NDR) of the current–voltage (I-V) characteristic to greater bias. Asymmetric variation of the barriers controlled the perturbation of the resonant peak bias <span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>r</mi></mrow></msub></math></span>, with a thinner first barrier resulting in a perturbation to greater bias and a thinner second barrier resulting in the inverse. Both barrier thicknesses inversely impacted the current, with the first barrier having a greater impact. The impact of IR was studied using the average of 25 device I-V characteristics for a given configuration of IR, as well as the I-V characteristic and charge density of specific devices. It was found that IR along the QW reduced the effective QW width and IR along the barriers increased their effective thickness, which together explained the effects of IR along all Al<span><math><msub><mrow></mrow><mrow><mtext>0.3</mtext></mrow></msub></math></span>Ga<span><math><msub><mrow></mrow><mrow><mtext>0.7</mtext></mrow></msub></math></span>As interfaces.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208264"},"PeriodicalIF":2.7,"publicationDate":"2025-07-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144686209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Boosting external quantum efficiency of AlGaN-based deep-ultraviolet LEDs enabled by heuristic optimization-based inverse design","authors":"Jinglei Wang ,&nbsp;Huimin Lu ,&nbsp;Yifan Zhu ,&nbsp;Xuecheng Wei ,&nbsp;Jianhua Ma ,&nbsp;Zihua Zhang ,&nbsp;Tongjun Yu ,&nbsp;Hua Yang ,&nbsp;Jianping Wang","doi":"10.1016/j.micrna.2025.208275","DOIUrl":"10.1016/j.micrna.2025.208275","url":null,"abstract":"<div><div>In this study, with the aim of concurrently enhancing the internal quantum efficiency (IQE) and light extraction efficiency (LEE) of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs), thus boosting the external quantum efficiency (EQE), a novel method for the inverse design of step-like quantum wells (QWs) and superlattice electron blocking layers (SL EBLs) based on intelligent optimization algorithms is put forward. Initially, an optimization problem aimed at maximizing EQE regarded as the product of IQE and LEE is formulated. The Al composition and thickness gradient of the step-like QWs, along with the Al composition gradient of the SL EBL, are set as decision variables. An intelligent optimization algorithm is then utilized to address this optimization problem. The results demonstrate that, based on the optimized structure, the overlap of the carrier wave functions in the active region of the DUV LED is significantly increased, which can effectively mitigate electron leakage and promote hole injection, thus enhancing the IQE. Moreover, the optimized structure increases the TE-polarization percentage, which results in an improved LEE. As a result, the optimized structure shows a 32 % and 9.7 % increase in IQE and LEE, respectively, at an injection current density of 200 A/cm², and the EQE exhibits a remarkable 45 % improvement.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208275"},"PeriodicalIF":2.7,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144686208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and optimization of Cs2AgInBr6/CsSnI3-based dual-absorber inorganic perovskite solar cell for enhanced broadband absorption","authors":"Janmoni Borah ,&nbsp;Smriti Baruah","doi":"10.1016/j.micrna.2025.208274","DOIUrl":"10.1016/j.micrna.2025.208274","url":null,"abstract":"<div><div>This article introduces an innovative dual-absorber solar cell design using Dicesium Silver Indium Hexabromide (Cs₂AgInBr₆) and Cesium Tin Tri-iodide (CsSnI₃) in a FTO/ZnO/Cs₂AgInBr₆/CsSnI₃/CFTS heterojunction architecture. The optimal energy band alignment, along with structural and electrical parameter optimization of the Cs₂AgInBr₆/CsSnI₃ dual-absorber configuration, enhances power conversion efficiency (PCE), overcoming limitations in single-absorber Cs₂AgInBr₆ perovskite photovoltaic cells (PPCs). This enhancement is due to the synergistic effects between absorbers, improving light absorption and charge carrier dynamics. Using SCAPS-1D, critical parameters such as absorber thickness, defect density, and carrier transport layers were optimized. The dual-absorber achieved a PCE of 25.32 %, <em>V</em>_oc of 0.95 V, fill factor of 86 %, and <em>J</em>_sc of 31.9 mA/cm², outperforming the 11.96 % PCE of single-absorber PPCs. A peak quantum efficiency (QE) of 90 % spanning over 300–1000 nm wavelength range was also obtained, surpassing the 79 % QE of single absorbers over 300–830 nm.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208274"},"PeriodicalIF":2.7,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144655192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Single event burnout in field plate termination for 4H–SiC Schottky barrier diodes","authors":"Xinfang Liao ,&nbsp;Yintang Yang ,&nbsp;Yi Liu","doi":"10.1016/j.micrna.2025.208273","DOIUrl":"10.1016/j.micrna.2025.208273","url":null,"abstract":"<div><div>This paper presents the electro-thermal coupled simulation results of single event burnout (SEB) in field plate (FP) termination for 4H–SiC Schottky barrier diodes (SBDs). The heavy ion strike at the SiC/SiO₂/metal intersection is proved to be the worst case for SEB, and the catastrophic failure is related to the large current density and rapid heat accumulation at the SiC/SiO₂/metal intersection, because the high electric field at this region can induce strong localized avalanche multiplication of the heavy ion-induced carriers. Then, based on the failure mechanism analysis, we discuss the possible hardening techniques. The simulations show that introducing a buffer layer between the N⁻ epi-layer and the N⁺ substrate can effectively reduce the sensitivity of the device to heavy ion radiation, but we have to make a compromise between the SEB tolerance and the on-state resistance. Besides, the carrier lifetime control is proved to be a promising hardening technique. When the carrier lifetime in the N⁻ epi-layer is lower than a certain value, the SEB tolerance can be significantly improved without sacrificing the electrical performance of the device.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208273"},"PeriodicalIF":2.7,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144662634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Doped boron phosphide nanotubes for nedaplatin transportation: a theoretical investigation","authors":"A.C. Martínez-Olguín ,&nbsp;M.T. Romero de la Cruz ,&nbsp;R. García-Díaz ,&nbsp;Gregorio H. Cocoletzi ,&nbsp;Yuliana Avila-Alvarado","doi":"10.1016/j.micrna.2025.208272","DOIUrl":"10.1016/j.micrna.2025.208272","url":null,"abstract":"<div><div>After the synthesis of carbon nanotubes (CNT), these nanostructures have attracted the attention of scientists because they may be used in molecule transportation. Nanotubes analogous to CNTs, such as boron phosphide nanotubes (BPNTs), in the zigzag chirality, are important because theoretical predictions indicate that they are soluble in polar solvents. Therefore, they may be appropriate for applications in biological systems. We have investigated the structural and electronic properties of the (14,0) BPNTs in pristine form and doped with C/Ti, analyzing their interaction with nedaplatin in different configurations. First-principles total-energy calculations were performed using density functional theory (DFT) within the Quantum ESPRESSO package. Exchange–correlation energies were treated with the generalized gradient approximation (GGA) using the Perdew, Burke, Ernzerhof (PBE) functional, while electron–ion interactions were modeled with PAW pseudopotentials. In all calculations, long-range van der Waals interactions were accounted for by including the Grimme DFT-D2 dispersion correction scheme.</div><div>When the molecule forms bonds, it undergoes chemisorption. However, the molecule is physisorbed for the C-doped BPNT (P site), as confirmed by the absence of bond formation. High adsorption energy values are attributed to van der Waals interactions. Negative adsorption energy value means stronger interactions between drugs and nanotubes; however, such high values would not benefit the desorption of the molecule. The most suitable systems are pristine BPNT (−2.04 eV), C-doped BPNT (B site) (−2.28 eV), and C-doped BPNT (P site) (−1.44 eV). Additionally, in the case of Ti, nanotube deformation is observed. Pristine and C-doped nanotubes are more favorable because these systems have adsorption energy that is good enough to bond and not too strong, so desorption is possible.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208272"},"PeriodicalIF":2.7,"publicationDate":"2025-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144695058","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Structural, optical and luminescence characterization of Co-doped ZnO thin films","authors":"R. Nettour ,&nbsp;A. Kabir ,&nbsp;A. Erdoğmuş ,&nbsp;Ö.D. Kutlu ,&nbsp;G. Schmerber","doi":"10.1016/j.micrna.2025.208271","DOIUrl":"10.1016/j.micrna.2025.208271","url":null,"abstract":"<div><div>Co inclusion in ZnO induced changes of structural and optical properties was studied using X-ray diffraction (XRD), Raman spectroscopy, ATR-FTIR spectroscopy, UV–Visible spectroscopy and photoluminescence spectroscopy (PL) respectively. As a function of Co molar ratio x in the precursor solution, XRD patterns of corresponding samples revealed a change of crystalline parameters of ZnO from x = 0.06. The appearance of Co₃O₄ and Zn(OH)₂ secondary phases, for x = 0.10, suggested a slowdown of the reaction of the formation of ZnO induced by Co inclusion. These results were evidenced by Raman spectroscopy and ATR-FTIR spectroscopy. This last also revealed the enhancement of ZnO surface adsorption of CO₂ and H₂O after Co inclusion. As a function of Co molar ratio, the mean transmittance in the visible light region decreased from 70.33 % to 23.25 % and the band gap energy E_g decreased from 3.45 to 2.67 eV for x = 0.08. The increase of the band gap energy for x = 0.10 may be caused by the decrease of sp-d exchange interactions induced by the formation of Co₃O₄ and Zn(OH)₂ phases. Except for x = 0.10, all PL spectra, presented an ultraviolet emission peak around 375 nm and a near infrared emission peak around 754 nm. The intensity of these two emission peaks decreased, as a function of Co molar ratio, to completely disappear, for x = 0.10, leading the place to a red emission peak around 697 nm, attributed to Co-based impurities, and other peaks, between 400 and 562 nm, attributed to deep level defects in ZnO. These results make this material suitable for use in the spintronics domain, in gas sensing devices, light emitting diodes (LED) and solar cells.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208271"},"PeriodicalIF":2.7,"publicationDate":"2025-07-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144633779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}