Micro and Nanostructures最新文献

Design and analysis of PANI/MoS2 heterojunction-based transistors for improved analog performance 基于聚苯胺/二硫化钼异质结晶体管的设计与分析，以提高模拟性能

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-28 DOI: 10.1016/j.micrna.2025.208194

Shivangi Srivastava, Sajal Agarwal

{"title":"Design and analysis of PANI/MoS2 heterojunction-based transistors for improved analog performance","authors":"Shivangi Srivastava, Sajal Agarwal","doi":"10.1016/j.micrna.2025.208194","DOIUrl":"10.1016/j.micrna.2025.208194","url":null,"abstract":"<div><div>This study analyzes the performance of heterojunction of a PANI/MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> transistor through an evaluation of its various electrical characteristics. A comprehensive study is done to critically analyze the proposed device performance in terms of electrical and RF characteristics. Proposed device with channel length of <span><math><mrow><mn>3</mn><mo>.</mo><mn>5</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span> exhibited superior performance in terms of threshold voltage (<span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>t</mi><mi>h</mi></mrow></msub></math></span>) = −0.39 V, on/off ratio = <span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>11</mn></mrow></msup></mrow></math></span>, oxide capacitance (<span><math><msub><mrow><mi>C</mi></mrow><mrow><mi>g</mi><mi>g</mi></mrow></msub></math></span>)<span><math><mrow><mo>=</mo><mn>40</mn><mspace></mspace><mi>μ</mi><msup><mrow><mi>F/m</mi></mrow><mrow><mn>2</mn></mrow></msup></mrow></math></span> and maximum drain current = <span><math><mrow><mn>27</mn><mspace></mspace><mi>μ</mi><mi>A</mi></mrow></math></span> at comparatively lower gate voltage, i.e. 0.9 V. Maximum drain current can be further increased by 1.7 mA for 32 nm device. With the achieved parameter values, the proposed transistor can be employed for various applications, such as memory storage and analog circuits. However, high on/off ratio and low <span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>t</mi><mi>h</mi></mrow></msub></math></span> also ensure its usefulness in different switching and low-power devices. Physical realization of the proposed device is also discussed in detail to provide validation of results.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208194"},"PeriodicalIF":2.7,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design optimization of MEMS gyroscope for enhanced sensitivity, bandwidth and noise reduction MEMS陀螺仪的设计优化，以提高灵敏度，带宽和降噪

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-24 DOI: 10.1016/j.micrna.2025.208224

Shaveta , R.K. Bhan , Rishu Chaujar

{"title":"Design optimization of MEMS gyroscope for enhanced sensitivity, bandwidth and noise reduction","authors":"Shaveta , R.K. Bhan , Rishu Chaujar","doi":"10.1016/j.micrna.2025.208224","DOIUrl":"10.1016/j.micrna.2025.208224","url":null,"abstract":"<div><div>The paper presents and discusses a novel methodology for enhancing the amended Figure of merit (FOM) in a MEMS-based Gyroscope device using a thick sense mass. Generally, at the design stage, the focus is on optimising individual performance parameters like sensitivity, noise, or bandwidth based on specific applications. However, maximising an integrated figure of merit (FOM) is crucial for broader applicability and resource efficiency, enabling a single sensor to perform well across diverse applications. It is shown that one can obtain a better FOM by proper design optimization and using a simple single thick sense mass than existing reported approaches. The proposed design is demonstrated to achieve maximum device capability by simultaneously considering the maximization of sensitivity, bandwidth, and noise minimisation. The theoretical model and analysis of the proposed design were validated using Coventorware and Simulink software simulations, showing very close agreement with analytical results within 5 %. Compared to existing reports on devices under identical conditions, the optimized design exhibits a 52-fold increase in FOM at the fundamental level, measured in units of m Hz/dps<sup>2</sup>mm<sup>2</sup>. Deep Reactive Ion Etching (DRIE) has been proposed to be used to fabricate these devices through established processing steps, and experimental results validate and confirm the successful realization of structures for the sense mass. Additionally, we propose a new empirical relationship between sensitivity and bandwidth for improvement in device design. The effect of temperature on the thermomechanical noise is also considered. The proposed analysis provides valuable insights for MEMS gyroscope designers, aiming to enhance performance for applications such as navigation, intelligent machines and robotic systems.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208224"},"PeriodicalIF":2.7,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144178057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimizing world-record thin-film ACIGS solar cells with innovative 'hockey stick'-shaped GGI profile for tandem solar technology 优化世界纪录薄膜ACIGS太阳能电池与创新的“曲棍球棒”形状的GGI轮廓串联太阳能技术

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-23 DOI: 10.1016/j.micrna.2025.208220

Nour El I Boukortt , Antonio Garcia Loureiro

{"title":"Optimizing world-record thin-film ACIGS solar cells with innovative 'hockey stick'-shaped GGI profile for tandem solar technology","authors":"Nour El I Boukortt , Antonio Garcia Loureiro","doi":"10.1016/j.micrna.2025.208220","DOIUrl":"10.1016/j.micrna.2025.208220","url":null,"abstract":"<div><div>In this study, we perform a comprehensive optimization of key parameters influencing the performance of ACIGS (Ag-doped Cu(In,Ga)Se<sub>2</sub>) solar cells, focusing on the effects of deposition environment and techniques. Parameters such as absorber thickness, dopant concentration, electron affinity, bulk defect density, and interface trap density are analyzed using advanced TCAD simulations. A calibrated device model based on experimental data accounts for all relevant material properties and defect distributions. Our findings reveal that minimizing bulk and interface defects primarily induced by deposition conditions is critical to enhancing stability and performance. Under standard test conditions (AM1.5G, 25 °C), the reference and optimized ACIGS single-junction cells achieve power conversion efficiencies (PCEs) of 23.60 % and 25.80 %, respectively. Furthermore, under varying temperatures (20–90 °C) and illumination intensities (10–120 mW/cm<sup>2</sup>), the optimized cell demonstrates notable improvements: a 15 % enhancement in power temperature coefficient and a 22 % increase in voltage temperature coefficient. For tandem configurations, we pair the optimized ACIGS bottom cell featuring a double gallium grading profile with a perovskite top cell (bandgap ≈ 1.70 eV). This results in PCEs of 31.92 % and 32.39 % for tandem devices using ITO and band-to-band tunneling (B2BT) interconnections, respectively, under AM1.5G illumination. The results are benchmarked against recent studies, providing valuable insights into advanced strategies and the physical behavior of high-efficiency tandem perovskite/ACIGS solar cells.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208220"},"PeriodicalIF":2.7,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144138397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Silicon-coated plasmonic sensor with enhanced sensitivity for the detection of glucose solution 提高葡萄糖溶液检测灵敏度的硅包覆等离子体传感器

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-22 DOI: 10.1016/j.micrna.2025.208221

Yongpeng Ren, Desheng Qu, Yiping Sun, Fumeng Qin, Chunlei Li

引用次数: 0

Evaluation of second-order susceptibility in a symmetrical GaAs/InGaAs/GaAs quantum well under-indium segregation effect 铟偏析效应下对称GaAs/InGaAs/GaAs量子阱的二阶磁化率评价

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-22 DOI: 10.1016/j.micrna.2025.208222

Rim Menifi, Imen Saidi

{"title":"Evaluation of second-order susceptibility in a symmetrical GaAs/InGaAs/GaAs quantum well under-indium segregation effect","authors":"Rim Menifi, Imen Saidi","doi":"10.1016/j.micrna.2025.208222","DOIUrl":"10.1016/j.micrna.2025.208222","url":null,"abstract":"<div><div>The second-order susceptibility in a symmetrical two-level GaAs/InGaAs/GaAs quantum well under the indium segregation effect introduced by Muraki's model is theoretically analyzed in this study. The simulation procedure involves solving the coupled Schrödinger-Poisson equations to determine the electronic band structure, using the envelope wave function and the effective mass approximations. Then, the second harmonic generation (SHG) coefficient is calculated in a two-level model from the density matrix formalism. The study examines the influence of indium composition, hydrostatic pressure, external electric field and delta doping on electronic band parameters as well as on the second order susceptibility. The results obtained reveal that:<strong>(i)</strong> The resonant peaks' intensities of the second harmonic generation (SHG) increase along with indium composition as well as hydrostatic pressure, while their energy positions shift to higher and lower energies, respectively, with the increase of indium composition and that of the hydrostatic pressure. <strong>(ii)</strong> The simultaneous employment of an applied electric field and the delta doping in InGaAs' well is used to adjust the overlap of the electronic wave functions and the subbands' densities. This allows for a significant increase in real and virtual resonant intensities of the peaks reaching a value up to 5x10<sup>−5</sup> mV<sup>−1</sup> and shifting them towards higher energies. The results of this work open new perspectives for the exploitation of nonlinear and optical properties related to intersubband transitions in the structure of the quantum well based on GaAs/InGaAs highlighting their considerable potential for the development of advanced optoelectronic devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208222"},"PeriodicalIF":2.7,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144134363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comprehensive electrothermal characterization of shrunk nanosheets in gate-all-around field-effect transistors 栅极全能场效应晶体管中收缩纳米片的综合电热特性

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-21 DOI: 10.1016/j.micrna.2025.208213

Yan Li , Ziping Wang , Fei Li , Yabin Sun , Yanling Shi , Xiaojin Li

{"title":"Comprehensive electrothermal characterization of shrunk nanosheets in gate-all-around field-effect transistors","authors":"Yan Li , Ziping Wang , Fei Li , Yabin Sun , Yanling Shi , Xiaojin Li","doi":"10.1016/j.micrna.2025.208213","DOIUrl":"10.1016/j.micrna.2025.208213","url":null,"abstract":"<div><div>Gate-all-around field effect transistor (GAAFET) possesses a three-dimensional stacked structure, with its channels wrapped by materials of lower thermal conductivity. This configuration hinders heat dissipation, leading to a more pronounced self-heating effect (SHE) compared to FinFETs. The shrinking of channel length, width, and thickness enhances phonon-boundary scattering within the nanosheet, thereby degrading thermal conductivity and exacerbating the SHE. In this paper, the degradation of thermal conductivity and its impact on the electrothermal characteristics of the GAAFET are studied. The calculated results demonstrate that the proposed thermal conductivity degradation model aligns well with the experimental data, whereas the conventional thermal conductivity model underestimates the degradation by up to 50.4 %. Furthermore, using the proposed model, the electrothermal characteristics of GAAFETs in 5 nm node are investigated. It is observed that, compared to the conventional thermal conductivity model employed in TCAD simulator, the peak temperature increases by 4.9 %, while the threshold voltage and the on-state current decrease by 3 % and 1 %, respectively. Consequently, the proposed thermal conductivity model offers a perceptive and accurate analysis of the thermal characteristics of GAAFETs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208213"},"PeriodicalIF":2.7,"publicationDate":"2025-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144185031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Revolutionizing low-power efficiency: Unveiling the potential of Mg2Ge as source material in double gate vertical TFET design 革新低功耗效率：揭示Mg2Ge作为源材料在双栅垂直TFET设计中的潜力

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-21 DOI: 10.1016/j.micrna.2025.208214

Varun Mishra , Anant Negi , Vikas Rathi , Yogesh Kumar Verma , Chandni Tiwari

{"title":"Revolutionizing low-power efficiency: Unveiling the potential of Mg2Ge as source material in double gate vertical TFET design","authors":"Varun Mishra , Anant Negi , Vikas Rathi , Yogesh Kumar Verma , Chandni Tiwari","doi":"10.1016/j.micrna.2025.208214","DOIUrl":"10.1016/j.micrna.2025.208214","url":null,"abstract":"<div><div>Driven by the continuous miniaturization of device geometries and the increasing demand for higher switching speeds to minimize power dissipation, the tunnel field-effect transistor (TFET) presents a viable alternative to the conventional MOSFET. This study undertakes a comprehensive analysis of a Double-Gate Vertical TFET (DG-VTFET) architecture, comparatively evaluating silicon (Si) and magnesium germanide (Mg<sub>2</sub>Ge) as source materials. Exploiting the band-to-band tunneling (BTBT) mechanism and, for the first time, employing the low-bandgap material Mg<sub>2</sub>Ge (0.69 eV at room temperature, significantly lower than the 1.12 eV bandgap of Si), demonstrably superior performance is achieved compared to a conventional Si-based vertical TFET. Specifically, enhancements are observed in ON-state current (I<sub>ON</sub>), average subthreshold swing (SS), threshold voltage (V<sub>th</sub>), and current switching ratio, yielding values of 0.04 mA, 35.60 mV/dec, 0.282 V, and 4.405 × 10<sup>11</sup>, respectively. These results underscore the potential of the Mg<sub>2</sub>Ge-based VTFET for low-power applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208214"},"PeriodicalIF":2.7,"publicationDate":"2025-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144154400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An overview of room temperature Fe2O3 gas sensors 室温Fe2O3气体传感器概述

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-21 DOI: 10.1016/j.micrna.2025.208223

M. Hjiri

{"title":"An overview of room temperature Fe2O3 gas sensors","authors":"M. Hjiri","doi":"10.1016/j.micrna.2025.208223","DOIUrl":"10.1016/j.micrna.2025.208223","url":null,"abstract":"<div><div>Resistive gas sensors have many advantages compared to other sensing materials such as graphene and its derivatives in term of much higher sensitivity, stability and faster dynamics. Nonetheless, one of the most serious problems of metal oxide sensors is their high sensing temperatures which leads to extensive power consumption and limit their widespread applications in places with energy shortage and remote areas. Thus, development of room temperature (RT) metal oxide gas sensors is of importance. N-type semiconducting α-Fe<sub>2</sub>O<sub>3</sub> is one of the popular sensing candidates thanks to its non-toxicity, abundance, high stability, simple synthesis, and high mobility of charge carriers. Also, γ-Fe<sub>2</sub>O<sub>3</sub> is another polymorph of iron oxide with n-type nature with less thermal stability. For gas sensing applications, often the sensing temperatures of both α-Fe<sub>2</sub>O<sub>3</sub> and γ-Fe<sub>2</sub>O<sub>3</sub> are high thanks to their relatively high electrical resistance at RT. However, there are some reports about RT gas sensing features of Fe<sub>2</sub>O<sub>3</sub>-based sensors. In this review paper, we are discussing those gas sensors in detail. We believe that this review paper can deliver new idea and strategies for design and development of Fe<sub>2</sub>O<sub>3</sub> gas sensors with possibility of working at RT.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208223"},"PeriodicalIF":2.7,"publicationDate":"2025-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144123136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simulation study of a 1200V 4H–SiC lateral MOSFETs with Double-RESURFs technology for reducing saturation current 采用双resurfs技术降低饱和电流的1200V 4H-SiC横向mosfet的仿真研究

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-20 DOI: 10.1016/j.micrna.2025.208218

Lijuan Wu, Jiahong He, Zhipeng Shen, Gengbin Zhu, Qiqi Tang, Zongyang Yi, Guanglin Yang, Deqiang Yang

{"title":"Simulation study of a 1200V 4H–SiC lateral MOSFETs with Double-RESURFs technology for reducing saturation current","authors":"Lijuan Wu, Jiahong He, Zhipeng Shen, Gengbin Zhu, Qiqi Tang, Zongyang Yi, Guanglin Yang, Deqiang Yang","doi":"10.1016/j.micrna.2025.208218","DOIUrl":"10.1016/j.micrna.2025.208218","url":null,"abstract":"<div><div>A 1200V 4H–SiC lateral double-diffused MOSFETs (LDMOS) with embedded auto-adjust JFET (AD-JEFT) and double-reduced surface fields technology is proposed. The AD-JEFT, as the conduction path of electrons from N+ source to the P-well channel, is embedded in P+ well. In the on-state, as the device is pressurized, the increase of depletion charge will reduce the effective channel width of AD-JFET. As a result, the potential barrier of the AD-JFET channel will increase rapidly, making it difficult for electrons to transfer and resulting in a reduction of the saturation current. Compared with the common LDMOS (C-LDMOS), the saturation current (<em>I</em><sub>dsat</sub>) of the proposed LDMOS with AD-JEFT (ADJ-LDMOS) is reduced by 53.3 %. Meanwhile, the short circuit capability is improved by 110.5 %. In addition, the top P-type region of ADJ-LDMOS is divided into a higher doped P-top region and a lower doped P-top2 region, which greatly improves the blocking ability. The breakdown voltage was increased by 21.9 % without increasing the specific on-resistance (<em>R</em><sub>on,sp</sub>).</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208218"},"PeriodicalIF":2.7,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144116808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimization of double absorber antimony chalcogenide-based solar cells: A comprehensive parametric optimization to achieve 28.4 % conversion efficiency 双吸收剂硫系锑基太阳能电池的优化：实现28.4%转换效率的综合参数优化

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-20 DOI: 10.1016/j.micrna.2025.208215

Harshit Saxena , Jaspinder Kaur , Rikmantra Basu , Ajay Kumar Sharma , Jaya Madan , Rahul Pandey

{"title":"Optimization of double absorber antimony chalcogenide-based solar cells: A comprehensive parametric optimization to achieve 28.4 % conversion efficiency","authors":"Harshit Saxena , Jaspinder Kaur , Rikmantra Basu , Ajay Kumar Sharma , Jaya Madan , Rahul Pandey","doi":"10.1016/j.micrna.2025.208215","DOIUrl":"10.1016/j.micrna.2025.208215","url":null,"abstract":"<div><div>Antimony Chalcogenides have recently gained prominence as preferable substitutes of hybrid halide perovskites for solar cell implementations because of their phase stability, high absorption coefficient, tunable bandgap and enhanced resilience to environmental degradation effects. They are relatively inexpensive and abundant in nature as well. This study focuses on comparing the photovoltaic parameters of the Antimony chalcogenides-based perovskite solar cell (PSC) with a back surface field layer (BSF) with the photovoltaic parameters of cell without BSF layer. While the study aims to analyse the effect of adding a BSF layer, we further refine the device architecture by calibrating parameters including thickness, doping concentrations and defect densities of the various layers incorporated in the device. The proposed model has double absorber layer (Sb<sub>2</sub>S<sub>3</sub> and Sb<sub>2</sub>Se<sub>3</sub>) and incorporates BSF layer (WSe<sub>2</sub>) to enhance photo-absorption and increase efficiency of solar cell. The model has been investigated using SCAPS-1D software. The proposed model is p<sup>+</sup>-WSe<sub>2</sub>/p-Sb<sub>2</sub>S<sub>3</sub>/n-Sb<sub>2</sub>Se<sub>3</sub>/n-WS<sub>2</sub> (With BSF) and p-Sb<sub>2</sub>S<sub>3</sub>/n-Sb<sub>2</sub>Se<sub>3</sub>/n-WS<sub>2</sub> (without BSF). The structure without the BSF layer gives an optimized PCE of 25.06 % while the structure with BSF layer gives an optimized PCE of approximately 28.4 %. These optimized structures provide a comprehensive framework for developing non-toxic, durable and highly efficient photovoltaic devices utilizing chalcogenide perovskites. This work also offers valuable insights into bridging the gap between simulation-based approaches and real-world applications while addressing practical challenges in device implementation.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208215"},"PeriodicalIF":2.7,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144154394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0