Micro and Nanostructures最新文献

{"title":"Structural evolution, electronic and spectral properties of bimetallic Rb2Mgn clusters based on DFT","authors":"Jin Chan Wang ,&nbsp;Lan Hui Huang ,&nbsp;Hai Jun Hou ,&nbsp;Miao Cao ,&nbsp;Yan Xi ,&nbsp;Miao Miao Li ,&nbsp;Ya Ru Zhao","doi":"10.1016/j.micrna.2025.208149","DOIUrl":"10.1016/j.micrna.2025.208149","url":null,"abstract":"<div><div>Bimetallic clusters have garnered heightened attention due to their capacity to adjust their intrinsic properties by modifying size, structure, and doping. In this study, we perform a structural search to identify the global minimum of the Rb₂Mg_<em>n</em> (<em>n</em> = 1–12) clusters using the CALYPSO code for structural predicting, followed by DFT optimization. The geometric, electronic and spectral behaviors that vary with size are discussed in depth. Our findings indicate a transition in structure from planar to 3D frameworks at <em>n</em> = 3, then to hollow cage-like structure at <em>n</em> = 8 for Rb₂Mg_<em>n</em> clusters, which happens slightly later than pure magnesium clusters. The convex site is where the Rb atom likes to localize in their structures. Charge transfer studies reveal the electron-loss behavior of Rb along with the presence of <em>sp</em> hybridization in the clusters. Analysis of stability suggests that the Rb₂Mg₃ and Rb₂Mg₉ clusters exhibit greater stability, which is attributed to their closed-shell electronic configurations such as 1S²1P⁶ and 1S²1P⁶1D¹⁰2S². A study of the bonding characteristic not only reveals the delocalization of the bond, but also indicates the stronger Rb–Mg bond than the Mg–Mg bond in Rb₂Mg₃ and Rb₂Mg₉. The spectral characteristics, as determined from IR and Raman spectroscopy, have also been examined.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"203 ","pages":"Article 208149"},"PeriodicalIF":2.7,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143654878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical study on the optical properties of a Pd–TiO2 core-shell nanoparticle as a highly active heterogeneous structure for photocatalytic applications","authors":"Mohammed Alsawafta,&nbsp;Chawki Awada","doi":"10.1016/j.micrna.2025.208148","DOIUrl":"10.1016/j.micrna.2025.208148","url":null,"abstract":"<div><div>The influence of TiO₂ shell on both the optical response and associated nearfield intensity of a spherical Pd core has been investigated theoretically by employing the Finite-Difference Time-Domain (FDTD) simulation tool. By devoting the concept of the effective dielectric medium, a theoretical analysis is introduced to provide a better understanding of how combined materials (shell material and host medium) can impact the spectral response of the core-shell nanoparticles and the correlated sensing capability. From the results of the numerical simulations, it is found that the sensing competence of the considered core-shell system is decreased significantly with increasing the shell thickness (t). This implies that a thicker shell acts as a shield, allowing the complex dielectric function of the TiO₂ to dominate the resonance condition and progressively reducing the influence of the surrounding host matrix on the resonance phenomenon. Additionally, independent of the material types, the current study provides a scaling model to properly connect the impact of both the shell thickness and the core size (r) to the related sensing performance, such that t/r should be smaller than a factor of two for the successful usage of such nanoparticles for sensing applications. The current findings provide some detailed guidelines to properly and accurately design plasmon-based sensing platforms constructed from heterogeneous core-shell nanostructures.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"203 ","pages":"Article 208148"},"PeriodicalIF":2.7,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"TCAD-based evaluations of a high-performance, low-power dielectric modulated BioTFET with dopingless tunneling junctions","authors":"Iman Chahardah Cherik ,&nbsp;Saeed Mohammadi ,&nbsp;Mohamad Reza Bayatiani ,&nbsp;Fatemeh Seif","doi":"10.1016/j.micrna.2025.208146","DOIUrl":"10.1016/j.micrna.2025.208146","url":null,"abstract":"<div><div>This article introduces a biosensor that utilizes a dopingless Ge/Si heterostructure for more efficient detecting the intended biomolecules. In order to convert the intrinsic germanium-based semiconductor within our bioTFET (biological tunneling field-effect transistor) into a P⁺ region, we have surrounded the source with two heavily-doped silicon layers. This addresses challenges such as silicide formation and parasitic metal-to-source tunneling, which are commonly found in charge plasma-based devices. In the drain region, we have incorporated N⁺ doping instead of using inductive metal, resulting in improved AC performance. To verify our findings, we have used a calibrated device simulator and proposed a detailed fabrication process for our bioTFET. In order to assess the functionality of our biosensor, we have executed a series of simulations to quantify its performance metrics, including the sensitivity of drain current and subthreshold swing. Due to our device's optimal design, we achieved ideal parameters such as <span><math><mrow><msub><mi>S</mi><msub><mi>I</mi><mi>D</mi></msub></msub></mrow></math></span> = 6.15 × 10⁶,and <span><math><mrow><msub><mi>S</mi><msub><mrow><mi>S</mi><mi>S</mi></mrow><mrow><mi>a</mi><mi>v</mi><mi>g</mi></mrow></msub></msub></mrow></math></span> = 0.92 at <em>V</em>_GS = 0.7 V.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"203 ","pages":"Article 208146"},"PeriodicalIF":2.7,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143654877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Controlling dislocation clusters in selective area growth of gallium nitride with hexagonal configurations of serpentine channel mask","authors":"Muhammad Saddique Akbar Khan ,&nbsp;Guo Yu ,&nbsp;Pervaiz Ahmad ,&nbsp;Weihua Chen ,&nbsp;Menglai Lei ,&nbsp;Huanqing Chen ,&nbsp;Xiaodong Hu","doi":"10.1016/j.micrna.2025.208144","DOIUrl":"10.1016/j.micrna.2025.208144","url":null,"abstract":"<div><div>The periodic distribution of threading dislocations (TDs) originating from the windows and coalescence areas during epitaxial lateral overgrowth (ELOG) of GaN hindered the further development of large wafer-scale crystal growth. Although, the serpentine channel patterned sapphire substrate (SCPSS) effectively controlled TDs from the window areas, however, the periodic distribution of TDs from coalescence areas was still problematic. To control the periodicity of TDs from coalescence areas, selective area growth (SAG) was introduced in the form of a triangular pattern. However, these selective patterns were relaxed and clusters of TDs were gliding. Despite adding InGaN-Interlayer, the complete elimination of TD clusters was still a great challengeTherefore, the hexagonal configuration of the SCPSS was proposed. Characterization results proved that the hexagonal configuration of SAG assisted by facet structures effectively controls TDs clusters in the SAG. In addition, defects from the meeting fronts were also effectively controlled through the convergence of the growth fronts merging from hexagonal sides at central single-dimensionless points. Optimizing high-quality growth by the hexagonal configuration of SCPSS is promising for GaN-based devices such as laser diodes (LDs) and light-emitting diodes (LEDs).</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"203 ","pages":"Article 208144"},"PeriodicalIF":2.7,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143637481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Numerical investigation of eco-friendly FASnI3 perovskite solar cells: Effects of energy band alignment and interface defect","authors":"Chenglei Yin ,&nbsp;Ting Gou ,&nbsp;Junyi Li,&nbsp;Shuzhen Li,&nbsp;Minglin Zhao","doi":"10.1016/j.micrna.2025.208147","DOIUrl":"10.1016/j.micrna.2025.208147","url":null,"abstract":"<div><div>HC(NH₂)₂SnI₃ (FASnI₃) is considered as a promising lead-free perovskite (PVK) for its wide bandgap and great temperature stability. However, Sn-based perovskites exhibit lower electron affinities than Pb-based perovskites, resulting in large band mismatch at the interfaces. The energy band alignment and defects at the interfaces play an important role in the perovskite solar cell (PSC) performance. In this simulation, we optimize the FTO/TiO₂/FASnI₃/PTAA/Au structure to achieve efficiently and eco-friendly FASnI₃-based PSCs using SCAPS-1D, with a special focus on interface engineering. The band offsets of TiO₂/FASnI₃ and FASnI₃/PTAA interfaces are systematically modified by changing the electron affinity values of the absorber and charge transport layers (CTLs). Additionally, the influence of defect density at the TiO₂/FASnI₃ and FASnI₃/PTAA interface is also discussed. It is found that the efficiency of PSCs can be significantly improved by suitable energy band alignment accompanied by small spike-like band offsets and the reduction of interface defects. The initial structure is based on an experimental work with an efficiency of 2.53 %. After optimization, the device reaches the highest theoretical power conversion efficiency (<em>PCE</em>) of 17.92 % with fill factor (<em>FF</em>) of 77.79 %, open circuit voltage (<em>V</em>_<em>oc</em>) of 0.93 V and short circuit current density (<em>J</em>_<em>sc</em>) of 24.81 mA/cm².</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"203 ","pages":"Article 208147"},"PeriodicalIF":2.7,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143654879","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"VO2-Graphene based four-state ultra-wideband terahertz metamaterial with switchable absorption, reflection, and transmission","authors":"Jian Shen,&nbsp;Han Li,&nbsp;Xuejun Qiu,&nbsp;Junjiao Lu,&nbsp;Yi Wang,&nbsp;Chengzhi Jin","doi":"10.1016/j.micrna.2025.208143","DOIUrl":"10.1016/j.micrna.2025.208143","url":null,"abstract":"<div><div>A multifunctional ultra-wideband (UWB) terahertz (THz) metamaterial device based on VO₂ and graphene is proposed, capable of achieving tunable and switchable high-frequency absorption broadband (HFBA)/low-frequency broadband absorption (LFBA)/reflection/transmission in the THz band. The mechanism is clearly explained by impedance matching theory, the electric field strength distributions (EFSDs) and equivalent simplified model. Based on the simulation results, the localized surface plasmon resonance (LSPR) of the patterned graphene reaches LFBA above 90 % between 2.42 and 4.83 THz, and the absorptivity can be changed from 19 % to 99 % by varying the graphene's Fermi level. The electric and magnetic resonances produce HFBA with an adjustable absorption amplitude between 17 % and 98 % in the 3.02–7.86 THz range by controlling the conductivity of the annular VO₂. In addition, reflection and transmission can be adjusted between 0 % and 80 %. The proposed metamaterial device exhibits strong polarization- and angle-of-incidence-independent properties, ensuring its stable application in intelligent absorption and electromagnetic shielding.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"203 ","pages":"Article 208143"},"PeriodicalIF":2.7,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143627856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Aharonov-Bohm Effect and Rotation : Assessing the Effective Complex Dielectric Function in a Rotating 2D Quantum Ring","authors":"A. Naifar ,&nbsp;K. Hasanirokh","doi":"10.1016/j.micrna.2025.208145","DOIUrl":"10.1016/j.micrna.2025.208145","url":null,"abstract":"<div><div>Research into spinning systems is actively pursued across diverse fields within physics. This study explores the influence of an electron angular motion within two-dimensional quantum ring (2D-QR). Particular attention is given to the interplay between the Aharonov-Bohm (AB) impact and a constant-field magnetic environment. Utilizing the Schrödinger equation with minimal coupling, we introduce an effective four-potential to account for the system's rotational effects and derive the corresponding equations of motion. Additionally, a radial potential term, dependent on the average ring radius, is incorporated to further refine the analysis. By employing a standard iterative procedure, the analytical formula for the effective complex dielectric function (ECDF) is derived and its associated real and imaginary components are probed in response to various external perturbations. Varying the rotational metric significantly alters the electron cloud, leading to a centrifugal outcome that drives particle localization towards the edges of the ring. Regarding the imaginary part of ECDF, a remarkable asymmetry is observed in the system's response to frequency shifts. While a positive frequency excursion from 0 to 80 THz leads to a significant attenuation of the amplitude (reduced by a factor of 1.67), an analogous negative frequency shift (from 0 to -55 THz) produces an unexpected intensification with the amplitude increasing by a factor of 1.5. In addition, we found that a minimal alteration in the phase ϕ leads to a discernible jump in the peak amplitudes and a concomitant shift in their positions along the energy axis. In case of <em>Ω</em> = -30 THz, the photobleaching effect, resulting from the destructive interference occurring between the linear (<span><math></math></span> and nonlinear (<span><math></math></span> components, is slightly delayed even at I=1.5 MW/cm². Specific instruments, such as spectroscopic ellipsometers, intensity-controlled laser systems, and angle-resolved optical spectrometers, could benefit from our numerical exploration to further enhance their performance.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"203 ","pages":"Article 208145"},"PeriodicalIF":2.7,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143631846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strained bipolar charge plasma transistor as a high speed LIF neuron","authors":"Priyanka ,&nbsp;Sangeeta Singh ,&nbsp;Meena Panchore","doi":"10.1016/j.micrna.2025.208127","DOIUrl":"10.1016/j.micrna.2025.208127","url":null,"abstract":"<div><div>For Neuromorphic computing and bio realistic dynamics, distinct CMOS devices have been carried out. But most devices used for developing artificial synapses and mimicking the LIF neuronal dynamics suffer from high power dissipation, low operating speed, and high cost of hardware implementation. In this work, leaky integrate and fire neural are implemented using a strained bipolar charge plasma transistor based on a floating body mechanism. For the first time, strained BCPT neuron is demonstrated to mimic biological behavior which provides an inherently low-energy, cost-effective, and easy implementation of the neuron. The strained BCPT based neuron exhibits maximum spiking energy of 196 aJ which is 1.53 <span><math><mo>×</mo></math></span> 10<span><math><msup><mrow></mrow><mrow><mn>5</mn></mrow></msup></math></span>, 1.79 <span><math><mo>×</mo></math></span> 10<span><math><msup><mrow></mrow><mrow><mn>5</mn></mrow></msup></math></span>, 5.1 <span><math><mo>×</mo></math></span> 10<span><math><msup><mrow></mrow><mrow><mn>4</mn></mrow></msup></math></span>, 2.9 <span><math><mo>×</mo></math></span> 10<span><math><msup><mrow></mrow><mrow><mn>4</mn></mrow></msup></math></span>, 32.1, 16.4, 1.28 <span><math><mo>×</mo></math></span> 10<span><math><msup><mrow></mrow><mrow><mn>3</mn></mrow></msup></math></span>, 918, 5820, 14.8 times less as compared to phase change CMOS, SOI CMOS, PCMO CMOS, Biristor, Bulk FinFET, PD SOI CMOS based on BTBT, FBFET, LBIMOS, DGJLFET, and Silicon nanowire. This work also investigates the effect of temperature, base width, germanium mole fraction, and metal electrode work function. The collector potential of 0.30 V is enough to produce a threshold spike current of 8 <span><math><mrow><mi>r</mi><mi>m</mi><mi>μ</mi></mrow></math></span>A/<span><math><mrow><mi>μ</mi><mi>m</mi></mrow></math></span> which is 9.33, 10, 2.66, 5, 6.66, and 1.33 times less as compared to SOI CMOS, Bulk FinFET, Si NIPIN, PD SOI MOS, LBIMOS, and DGJLFET, respectively. Here, the strained BCPT floating body is responsible for the accumulation of holes generated by impact ionization (II). The proposed neuron device demonstrates the basic function of LIF dynamics at 12 GHz frequency using the SILVACO 2D TCAD simulation tool. Hence, this work provides the possibility of easy fabrication of highly-integrated SNN at high operating speed and low-energy consumption.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"203 ","pages":"Article 208127"},"PeriodicalIF":2.7,"publicationDate":"2025-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143631847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring the optimized Ge/Si heterostructure extended source (ES) Fin-TFETs for improved DC and analog performance","authors":"B.V. Rao ,&nbsp;Arun Kumar ,&nbsp;Brinda Bhowmick","doi":"10.1016/j.micrna.2025.208133","DOIUrl":"10.1016/j.micrna.2025.208133","url":null,"abstract":"<div><div>Tunnel Field-Effect Transistors (TFETs) have been recognized as a potential alternative for low-power switching devices because of their ability to achieve a superior subthreshold swing (SS) compared to traditional MOSFETs. Nevertheless, point tunneling-based TFETs have major issues, such as reduced on-current (I_on) and elevated SS, which limit their practical application. These issues stem from restricted tunneling space and an inefficient tunneling direction. To overcome these limitations, this work introduces an Extended Source Fin-TFET (ES Fin-TFET) architecture utilizing a Ge/Si heterostructure. The device achieves significant performance improvements by combining point tunneling at the source-channel hetero-junction and line tunneling in the extended source region. The proposed ES Fin-TFET exhibits a high on-current of 1.25 × 10⁻⁵ A while maintaining a low off-current of 1.35 × 10⁻¹⁷ A. The device further demonstrates exceptional DC characteristics, including a threshold voltage (V_T) of 0.28 V, a high on-off current ratio exceeding ∼1 × 10¹², and an average subthreshold slope of 23 mV/decade. Additionally, AC performance analysis of the proposed device reveals a transconductance of 2.5 × 10⁻⁵ S, a gain-bandwidth product of 1.6 × 10¹⁰ Hz, a cut-off frequency of 4.5 × 10¹⁰ Hz, and a transconductance generation factor of 6.9 × 10⁵ V⁻¹, demonstrating its potential for high-performance analog and RF applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"203 ","pages":"Article 208133"},"PeriodicalIF":2.7,"publicationDate":"2025-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143609290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Topological ring resonator for refractive index sensing at telecommunication wavelength","authors":"Zaiyue Yang ,&nbsp;HongMing Fei ,&nbsp;Min Wu ,&nbsp;Han Lin","doi":"10.1016/j.micrna.2025.208131","DOIUrl":"10.1016/j.micrna.2025.208131","url":null,"abstract":"<div><div>Ring resonators play an increasingly important role in biomedical sensing. Conventional optical ring resonators based on waveguide structures have some problems, such as large size, limited integrated density, and easily influenced by external factors. Therefore, it is desired to evoke new design principles to achieve ultracompact biomedical sensors with high performance. Here, we demonstrated topological refractive index sensors based on valley photonic crystal (VPC) ring resonator structures working at telecommunication wavelength and whose resonant peaks move in response to the surrounding material's refractive index change. The structure is designed to work in an aqueous solution (refractive index of 1.33), and within the sensing range of 1.33–1.45, it has a phase shift of 4.16π and a detection sensitivity of 208.09 nm/RIU (refractive index unit) with a detectable refractive index difference of 0.0044. In addition to the single-ring resonator structure, we further tune the free spectral range (FSR) by combining ring resonators with different sizes, and the sensitivity is tuned accordingly. The designed structures are suitable for the current mature complementary metal-oxide-semiconductor (CMOS) nanofabrication technique. In addition, the refractive index sensor can also be applied as a mechanism for tuning the resonant peaks for optical modulations.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"202 ","pages":"Article 208131"},"PeriodicalIF":2.7,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}