Micro and Nanostructures最新文献

A rigorous comparative review of advanced TFET architectures: From device innovations to sensor applications 先进TFET架构的严格比较审查：从器件创新到传感器应用

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Micro and Nanostructures Pub Date : 2026-05-01 Epub Date: 2026-02-06 DOI: 10.1016/j.micrna.2026.208582

Mohammad K. Anvarifard , Zeinab Ramezani

{"title":"A rigorous comparative review of advanced TFET architectures: From device innovations to sensor applications","authors":"Mohammad K. Anvarifard , Zeinab Ramezani","doi":"10.1016/j.micrna.2026.208582","DOIUrl":"10.1016/j.micrna.2026.208582","url":null,"abstract":"<div><div>This paper presents a comprehensive and rigorous review of the most significant Tunnel Field-Effect Transistor (TFET) architectures extensively studied in recent research. We systematically and hierarchically analyze TFETs based on diverse engineering approaches, including doping modulation, material innovation, ferroelectric-induced negative capacitance, heterodielectric gate formation, overlap/underlap techniques, junctionless designs, and vertical configurations. From viewpoint of compatibility by CMOS process, the scope is intentionally biased toward bulk/SiGe-based and vertical TFETs by also investigating the TFETs employing two-dimensional (2D) materials, which are critical for ultrascale applications owing to their superior control over short-channel effects. Furthermore, the potential of novel TFETs as highly sensitive biosensors and gas sensors is thoroughly examined, with a detailed comparison of their electrical performance and sensing capabilities. The study highlights the inherent advantages and limitations of each of the TFET categories, providing an outstanding understanding of their operational trade-offs. Through an extensive comparative analysis, we identify the optimal TFET device in terms of electrical performance in each TFET category, offering valuable guidance for VLSI designers in selecting TFETs tailored to specific application requirements. Additionally, the best TFET device among all these categories has been selected to provide a practical path for circuit and process engineers to design based on high-performance architectures. This work not only consolidates current knowledge but also paves the way for future innovations in TFET-based sensor technologies and nanoscale electronic devices, underscoring the fundamental role of device architecture and material choice in advancing next-generation integrated circuits.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"213 ","pages":"Article 208582"},"PeriodicalIF":3.0,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146191828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Indium oxide (In2O3) gas sensors - An insight study 氧化铟（In2O3）气体传感器-一项深入研究

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Micro and Nanostructures Pub Date : 2026-05-01 Epub Date: 2026-02-03 DOI: 10.1016/j.micrna.2026.208586

Sathish Sugumaran

引用次数: 0

Gas sensors optimization design by Pd- and Pt-doped Janus-HfSSe monolayer for industrial emission: A DFT study 工业排放用掺杂Pd和pt的Janus-HfSSe单层气体传感器优化设计：DFT研究

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Micro and Nanostructures Pub Date : 2026-05-01 Epub Date: 2026-02-03 DOI: 10.1016/j.micrna.2026.208592

Wei Xie , Nan Liu , Hao Chen , Tianyan Jiang

{"title":"Gas sensors optimization design by Pd- and Pt-doped Janus-HfSSe monolayer for industrial emission: A DFT study","authors":"Wei Xie , Nan Liu , Hao Chen , Tianyan Jiang","doi":"10.1016/j.micrna.2026.208592","DOIUrl":"10.1016/j.micrna.2026.208592","url":null,"abstract":"<div><div>Developing high-performance sensors for hazardous hydrogen fluoride (HF) gas is critical for industrial safety. In this study, we systematically investigate the gas-sensing properties of Pd- and Pt-doped Janus HfSSe monolayers towards HF and interfering gases (SO2, NO, NO2) using density functional theory (DFT). Our calculations reveal that transition metal doping significantly enhances the sensing performance of the inert intrinsic HfSSe by introducing d-orbital active sites near the Fermi level and effectively modulating the electronic structure. Notably, Pt@HfSSe exhibits the most superior sensing performance with a high sensitivity of 5.13% towards HF, driven by substantial work function changes. Although Pt@HfSSe shows strong chemisorption for both HF and NO, competitive adsorption simulations uncover a decisive site-blocking effect: pre-adsorbed HF generates a strong repulsive potential (+4.815 eV) against NO. This confirms Pt@HfSSe as a highly selective, dedicated HF sensor rather than a dual-gas sensor. While the strong adsorption (Eads = −0.561 eV) leads to a relatively long recovery time (381 s) at room temperature, this can be mitigated by moderate heating. These findings provide theoretical guidance for designing specific, high-sensitivity HF gas sensors based on functionalized Janus HfSSe.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"213 ","pages":"Article 208592"},"PeriodicalIF":3.0,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146191824","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunable electronic properties and Schottky barrier in NbS2/SiS2 heterostructures via strain and electric field 应变和电场作用下NbS2/SiS2异质结构的可调谐电子特性和肖特基势垒

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Micro and Nanostructures Pub Date : 2026-05-01 Epub Date: 2026-02-07 DOI: 10.1016/j.micrna.2026.208603

You Xie , Jiahao Wang , Zhengyong Chen , Yan Chen , Zixuan Zhou , Wentaiyang Zhang , Tao Zhang

{"title":"Tunable electronic properties and Schottky barrier in NbS2/SiS2 heterostructures via strain and electric field","authors":"You Xie , Jiahao Wang , Zhengyong Chen , Yan Chen , Zixuan Zhou , Wentaiyang Zhang , Tao Zhang","doi":"10.1016/j.micrna.2026.208603","DOIUrl":"10.1016/j.micrna.2026.208603","url":null,"abstract":"<div><div>Interface engineering of two-dimensional (2D) van der Waals heterostructures (vdWHs) is critical for the development of next-generation nanoelectronic devices. In this work, we systematically investigate the structural stability, electronic properties, and interfacial contact behavior of heterostructures composed of metallic NbS<sub>2</sub> and semiconducting SiS<sub>2</sub> monolayers using first-principles calculations. A low n-type Schottky barrier (0.08–0.14 eV), independent of stacking order, is formed. While the equilibrium tunneling probability (TP) is relatively low (4.94–6.63%), vertical strain enhances the TP by an order of magnitude by simultaneously reducing both the barrier height and width, approaching Ohmic contact under strong compression. Moreover, an external electric field enables reversible switching between n-type and p-type conduction within a range of ±0.8 V/Å. The intensity of metal-induced gap states (MIGS) increases monotonically with enhanced interlayer coupling, leading to stronger Fermi-level pinning (FLP), which ultimately determines the upper limit of tunability. These quantitative results provide a clear material–strain–field co-design pathway for achieving reconfigurable, low-contact-resistance two-dimensional nanoelectronic and optoelectronic devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"213 ","pages":"Article 208603"},"PeriodicalIF":3.0,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146192278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of active element Ti on interfacial microstructure of Silica Glass/ Silica Glass joints soldered using Bi42Sn2Ag2Ti(Ce,Ga) alloy filler 活性元素Ti对Bi42Sn2Ag2Ti（Ce,Ga）合金钎料焊接二氧化硅玻璃/二氧化硅玻璃接头界面微观结构的影响

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Micro and Nanostructures Pub Date : 2026-05-01 Epub Date: 2026-02-09 DOI: 10.1016/j.micrna.2026.208605

L.X. Cheng , D.Y. Chen

{"title":"Effects of active element Ti on interfacial microstructure of Silica Glass/ Silica Glass joints soldered using Bi42Sn2Ag2Ti(Ce,Ga) alloy filler","authors":"L.X. Cheng , D.Y. Chen","doi":"10.1016/j.micrna.2026.208605","DOIUrl":"10.1016/j.micrna.2026.208605","url":null,"abstract":"<div><div>In order to explore the effects of titanium on the microstructure of Silica Glass/Silica Glass joints soldered using Bi42Sn2Ag2Ti(Ce,Ga) alloy filler in low temperature, the distribution of elements and the formation of new substances at the interface were observed and analyzed. At the bonding temperature of 170 °C, titanium segregates at the bonding interface with a holding time of 30min; extending the holding time to 60min makes this titanium aggregation more pronounced. At 290 °C, however, the pattern differs: titanium segregation is observable at 30min, but barely visible when the holding time is extended to 60min. These results suggest that bonding temperature is a critical factor regulating the diffusion rate of titanium in molten solder during soldering process. Additionally, transmission electron microscopy(TEM) observations of the cross-sectional of silica glass/Bi42Sn2Ag2Ti(Ce,Ga) joint soldered at 290 °C for 30min revealed the discontinuous formation of TiO, TiO<sub>2</sub> and Sn<sub>3</sub>Ti<sub>2</sub> at the interface. Further analysis shows that the stoichiometry of Ti oxide formed at the interface may be determined by the concentration of Ti in the alloy. Finally, the evolutionary behavior of the active element Ti during the bonding process of silica glass and Bi42Sn2Ag2Ti(Ce,Ga) active solder at 290 °C was explored. The entire bonding process is proposed to involve three sequential stages: initial migration of Ti atoms, subsequent segregation and reaction of Ti at the interface, and continuous diffusion and further reaction of Ti to promote interfacial bonding.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"213 ","pages":"Article 208605"},"PeriodicalIF":3.0,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146192277","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of sintering temperature on the structural and dielectric properties of hydrothermally synthesized 0.5BCT-0.5BZT ceramics 烧结温度对水热合成0.5BCT-0.5BZT陶瓷结构和介电性能的影响

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Micro and Nanostructures Pub Date : 2026-05-01 Epub Date: 2026-02-07 DOI: 10.1016/j.micrna.2026.208591

Gun Anit Kaur , Neha Kumari , Sahil Kumar , Mamta Shandilya

{"title":"Effect of sintering temperature on the structural and dielectric properties of hydrothermally synthesized 0.5BCT-0.5BZT ceramics","authors":"Gun Anit Kaur , Neha Kumari , Sahil Kumar , Mamta Shandilya","doi":"10.1016/j.micrna.2026.208591","DOIUrl":"10.1016/j.micrna.2026.208591","url":null,"abstract":"<div><div>Lead-free complex perovskite 0.5BCT-0.5BZT ceramics were synthesized via eco-friendly hydrothermal method and sintered at different temperatures ranging from 900 to 1300 °C. The effect of sintering temperature on the variations in grain size is discussed in detail. X-ray diffraction confirmed the formation of a single-phase perovskite structure without secondary phases, with peak shifts indicating lattice distortion due to Ca<sup>2+</sup> and Zr<sup>4+</sup> incorporation. SEM analysis revealed that the progressive increase in grain size (0.12–0.39 μm) and densification with higher sintering temperatures, accompanied by a reduction in porosity. Temperature dependent dielectric properties are measured in the frequency range between 100 Hz and 100 kHz. BCT-BZT exhibits highly dense microstructure as the sintering temperature was increased to 1300 °C. The relative permittivity increased with sintering temperature, reaching a maximum for the 1300 °C sample, driven by combined grain growth and enhanced densification. The material exhibited diffuse phase transition behavior and low dielectric loss at high temperatures, favorable for capacitor applications. Ferroelectric (P–E) measurements indicated increased saturation and remanent polarization with reduced coercive field at higher sintering temperatures, consistent with improved domain wall mobility. These results demonstrate that sintering optimization significantly enhances the dielectric and ferroelectric performance of hydrothermally synthesized BCT–BZT ceramics, making them promising candidates for high-performance lead-free capacitors and energy storage devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"213 ","pages":"Article 208591"},"PeriodicalIF":3.0,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146192275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First-principles study of SF6 decomposition product adsorption on Ti-decorated WS2 monolayers for gas sensing applications SF6分解产物在ti修饰WS2单层气敏吸附的第一性原理研究

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Micro and Nanostructures Pub Date : 2026-05-01 Epub Date: 2026-01-30 DOI: 10.1016/j.micrna.2026.208584

Hamza Ahmad , Yuhuai Liu , Fang Wang , Zuhaib Nishter , Munees Khan , Rana Muhammad Zulqarnain , Xolmurotov Fozil , Xolmuratov Xolilla Sariyevich

{"title":"First-principles study of SF6 decomposition product adsorption on Ti-decorated WS2 monolayers for gas sensing applications","authors":"Hamza Ahmad , Yuhuai Liu , Fang Wang , Zuhaib Nishter , Munees Khan , Rana Muhammad Zulqarnain , Xolmurotov Fozil , Xolmuratov Xolilla Sariyevich","doi":"10.1016/j.micrna.2026.208584","DOIUrl":"10.1016/j.micrna.2026.208584","url":null,"abstract":"<div><div>The current work utilized a DFT study to examine the structural, electronic, and gas-sensing properties of a titanium-decorated WS<sub>2</sub> (Ti-WS<sub>2</sub>) monolayer. The calculated binding energy of −2.40 eV is consistent with the thermodynamic stability of Ti incorporation, which shows the feasibility of Ti substitution at W sites in the WS<sub>2</sub> lattice. Adsorption parameters for significant decomposition products of SF<sub>6</sub>, including SO<sub>2</sub>, SO<sub>2</sub>F<sub>2</sub>, H<sub>2</sub>S, HF, and SOF<sub>2</sub>, were thoroughly investigated. The Ti-WS<sub>2</sub> monolayer exhibits strong chemisorption interactions with these species, with adsorption energies of −1.71, −1.66, −1.54, −1.45, and −1.34 eV, respectively, signifying high affinity and selective adsorption ability. Electronic structure analysis highlighted that Ti decoration induces considerable modifications in the pristine WS<sub>2</sub> band gap, which varies upon gas adsorption. The band gap values reduce to 0.1, 0.2, 0.3, 0.5, and 0.6 eV for SO<sub>2</sub>, SO<sub>2</sub>F<sub>2</sub>, H<sub>2</sub>S, HF, and SOF<sub>2</sub>, adsorption, corresponding to sensing responses of 84.3 %, 61.6 %, 71.1 %, 49.8 %, and 40.6 %, respectively. This leads to a comparatively slow desorption rate of 2.15 × 10<sup>12</sup> s at 300 K, which was reduced to 85 ms by exposure to UV illumination, demonstrating great reusability. These results specify that Ti-WS<sub>2</sub> monolayers can be positively used as effective and recyclable SF<sub>6</sub> decomposition gas sensors.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"213 ","pages":"Article 208584"},"PeriodicalIF":3.0,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146192274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

CO2 adsorption on ZIF-8 powder: Combined experimental and theoretical study with SPR sensor integration ZIF-8粉体对CO2的吸附：SPR传感器集成的实验与理论结合研究

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Micro and Nanostructures Pub Date : 2026-05-01 Epub Date: 2026-02-03 DOI: 10.1016/j.micrna.2026.208599

Abdelhak Dhibi , Jabir Hakami , Chaker Briki , Nordin Felidj , Nadia Djaker

{"title":"CO2 adsorption on ZIF-8 powder: Combined experimental and theoretical study with SPR sensor integration","authors":"Abdelhak Dhibi , Jabir Hakami , Chaker Briki , Nordin Felidj , Nadia Djaker","doi":"10.1016/j.micrna.2026.208599","DOIUrl":"10.1016/j.micrna.2026.208599","url":null,"abstract":"<div><div>This investigation introduces an innovative synergy between advanced statistical physics modeling and surface plasmon resonance (SPR) sensor design, enabling enhanced analysis and real-time detection of CO<sub>2</sub> adsorption on ZIF-8 powder. To this end, a sophisticated monolayer adsorption model rooted in statistical physics was applied to fit and interpret experimental pressure-composition-temperature (PCT) isotherms reported in the literature [12], acquired at temperatures of 25 °C, 45 °C, 60 °C, and 80 °C. From the model fitting, key thermodynamic and microscopic parameters were extracted, including the receptor site density (N), the number of CO<sub>2</sub> molecules adsorbed per site (n), and the half-saturation pressure (P<sub>hs</sub>). The temperature-dependent evolution of these parameters offers valuable insights into the adsorption mechanism and the nature of CO<sub>2</sub>-ZIF-8 interactions. Furthermore, the adsorption energy was determined, providing a quantitative assessment of the interaction strength and adsorption affinity of the system. Based on this statistical approach, we developed an application to detect the quantity of CO<sub>2</sub> adsorbed using a surface plasmon resonance (SPR) sensor. Accordingly, the sensitivity of the proposed SPR sensor was evaluated under varying temperature and pressure conditions, highlighting its potential for practical gas sensing applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"213 ","pages":"Article 208599"},"PeriodicalIF":3.0,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146191825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of low-concentration boron incorporation on the structural coherence and phonon modes of layered GaSe 低浓度硼掺入对层状GaSe结构相干性和声子模式的影响

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Micro and Nanostructures Pub Date : 2026-05-01 Epub Date: 2026-02-07 DOI: 10.1016/j.micrna.2026.208604

Lamiya Balayeva , Ali Guseinov , Fidan Akhmedova , Mehmet Isik

{"title":"Effect of low-concentration boron incorporation on the structural coherence and phonon modes of layered GaSe","authors":"Lamiya Balayeva , Ali Guseinov , Fidan Akhmedova , Mehmet Isik","doi":"10.1016/j.micrna.2026.208604","DOIUrl":"10.1016/j.micrna.2026.208604","url":null,"abstract":"<div><div>Single crystals of <span><math><mrow><msub><mtext>Ga</mtext><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi>B</mi><mi>x</mi></msub><mtext>Se</mtext></mrow></math></span> (x = 0.3, 0.5, and 1.0%) were grown using the horizontal Bridgman technique and comprehensively studied to evaluate how low-level boron incorporation influences their structural, morphological, and vibrational characteristics. X-ray diffraction analysis confirmed that all samples retained the ε-GaSe hexagonal structure and exhibited exclusively (00l) reflections, indicating strong c-axis orientation, high crystallinity, and the formation of a single-phase solid solution. Increasing boron content enhanced the intensity of higher-order reflections, revealing improved stacking order and structural coherence. SEM observations showed the typical layered morphology of GaSe, while boron doping produced thicker and more compact layers, suggesting increased interlayer coupling associated with lattice contraction. Raman spectroscopy further verified the preservation of the characteristic A<sub>1</sub>g, E<sub>1</sub>g, and E<sub>2</sub>g modes. Subtle phonon shifts, FWHM broadening, and intensity variations with increasing boron concentration indicated lattice strain, phonon stiffening, and enhanced local disorder.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"213 ","pages":"Article 208604"},"PeriodicalIF":3.0,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146192276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Advantages of AlGaN-based 275-nm deep-ultraviolet LEDs with a tapered N-shaped aluminum-composition graded electron blocking layer 具有锥形n形铝成分梯度电子阻挡层的algan基275-nm深紫外led的优点

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Micro and Nanostructures Pub Date : 2026-05-01 Epub Date: 2026-02-08 DOI: 10.1016/j.micrna.2026.208602

Biao Shen , Taiping Lu , Yifan Zhang , Xiantian Shi , Zhigang Jia , Xiansheng Tang , Zhen Deng , Zhongqiang Wang , Yadan Zhu , Lichun Zhang

{"title":"Advantages of AlGaN-based 275-nm deep-ultraviolet LEDs with a tapered N-shaped aluminum-composition graded electron blocking layer","authors":"Biao Shen , Taiping Lu , Yifan Zhang , Xiantian Shi , Zhigang Jia , Xiansheng Tang , Zhen Deng , Zhongqiang Wang , Yadan Zhu , Lichun Zhang","doi":"10.1016/j.micrna.2026.208602","DOIUrl":"10.1016/j.micrna.2026.208602","url":null,"abstract":"<div><div>A tapered <em>N</em>-shaped aluminum-composition graded electron blocking layer (EBL) was proposed to mitigate electron leakage and enhance hole injection for AlGaN-based deep-ultraviolet (DUV) LEDs emitting around 275 nm. The optical and electrical performances of the metal-polar LEDs are simulated by the APSYS software. The tapered <em>N</em>-shaped graded AlGaN layer alters the electric field distribution both in the EBL and the active region, thereby modulating its closely related band tilting. Consequently, the barrier height for electrons increases from 347.8 to 374.7 meV, while that for holes decreases from 469.9 to 345.2 meV. The augment of barrier height for electrons and decrease of barrier height for holes contribute to the enhancement of electron confinement and hole injection. Furthermore, the polarization electric field within quantum wells is reduced, which is beneficial for enhancing the radiative recombination efficiency. At an injection current density of 100 A/cm<sup>2</sup>, an enhancement of 33.9% in the light output power and 34.3% in the internal quantum efficiency are achieved for the proposed structure. These results demonstrate that the tapered <em>N</em>-shaped composition graded EBL can effectively regulate carrier transport in the vicinity of the p-n junction, which provides a promising approach for enhancing the performance of AlGaN-based DUV LEDs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"213 ","pages":"Article 208602"},"PeriodicalIF":3.0,"publicationDate":"2026-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146192271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0