Micro and Nanostructures最新文献

{"title":"Efficiency improvement of CIGS solar cells with ZnSe buffer layer and SnS BSF layer","authors":"Ahmed Labadi ,&nbsp;Souad Tobbeche ,&nbsp;Okba Saidani ,&nbsp;Mohammed Bouladame ,&nbsp;Farida Brahimi","doi":"10.1016/j.micrna.2025.208257","DOIUrl":"10.1016/j.micrna.2025.208257","url":null,"abstract":"<div><div>Copper indium gallium selenium (CIGS) solar cells have attracted significant attention, owing to their high efficiency, flexibility, and cost-effectiveness. Their direct bangap and significant optical absorption coefficient of about 10⁵ cm⁻¹ make them particularly promising for photovoltaic applications. This study presents an extensive numerical analysis using SCAPS-1D software, systematically evaluating buffer layers (CdS, In₂S₃, ZnS, ZnSe) and back surface field (BSF) layer materials (PbS, SnS, CuTe₂) to optimise performance. Unlike previous studies focusing on individual materials, our comprehensive approach reveals critical insights into layer interactions through comparative analysis. SnS emerged as the most effective BSF material, achieving an open-circuit voltage of 0.815 V and an efficiency of 26.75 % when paired with ZnSe as the buffer layer. This is due to the BSF's ability to minimise back-surface recombination and enhance carrier collection. This result is also attributed to ZnSe's better band alignment with the CIGS layer, which reduces interface recombination and enhances device performance. Additionally, reducing The CIGS layer thickness from 3 μm to 2.2 μm decreases material usage and costs, with minimal impact on efficiency when ZnSe and SnS are used. This combination ensures high efficiency and reduced toxicity. In the second set of investigations, we optimise the absorber, buffer, and BSF layer thicknesses and the doping concentrations by analysing the short-circuit current density, open-circuit voltage, fill factor, and efficiency of the CIGS solar cell. The results show a high efficiency of 33.70 % for layer thicknesses of ZnSe, CIGS, and SnS of 40 nm, 2.2 μm, and 50 nm, respectively, and doping concentrations of the order of 10¹⁶, 1.65 × 10¹⁹, and 10¹⁶ cm⁻³, respectively. We also investigate the effects of defect densities within the CIGS, ZnSe, and SnS layers, as well as the CIGS/ZnSe and CIGS/SnS interfaces. Defects in both the bulk and at interfaces degrade the performance of the solar cells. Finally, we study the effect of temperature variations on solar cell performance. An increase in temperature contributes to efficiency degradation. This innovative structure, Mo/SnS/CIGS/ZnSe/ZnO, can be used to develop low-cost, sustainable, and eco-friendly high-efficiency CIGS solar cells.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208257"},"PeriodicalIF":2.7,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144514411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Source-field-plated β-(AlxGa1-x)2O3 MOSFET with breakdown voltage over 7kV","authors":"Hongyu Liu ,&nbsp;Haozhong Wu ,&nbsp;Yuangang Wang ,&nbsp;Yuanjie Lv ,&nbsp;Shida Han ,&nbsp;Tingting Han ,&nbsp;Shaobo Dun ,&nbsp;Hongyu Guo ,&nbsp;Xuanze Zhou ,&nbsp;Guangwei Xu ,&nbsp;Shibing Long ,&nbsp;Zhihong Feng","doi":"10.1016/j.micrna.2025.208255","DOIUrl":"10.1016/j.micrna.2025.208255","url":null,"abstract":"<div><div>In this letter, β-(Al_xGa_1-x)₂O₃ MOSFET with high breakdown voltage are demonstrated. A 150-nm β-(Al_0.14Ga_0.86)₂O₃ epitaxial layer and a 30-nm Ga₂O₃ buffer were grown on Fe-doped semi-insulating β-Ga₂O₃ substrate by metal-organic chemical vapor deposition. The epitaxial thin film exhibits relatively high crystalline quality, with a FWHM of 54 arcsec in the XRD rocking curve and a surface roughness of 2.3 nm. A T-shaped gate and source-field-plated are fabricated to mitigate electric field crowding. The β-(Al_0.14Ga_0.86)₂O₃ MOSFET with source-drain length of 84 μm demonstrates breakdown voltage of 7.2 kV, combined with the specific on-resistance of 3534 mΩ cm², corresponding to power figures of merit of 14.7 MW/cm². The results highlight the potential of β-(Al_xGa_1-x)₂O₃ for high-voltage power electronics.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208255"},"PeriodicalIF":2.7,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144492054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dopingless organic tunnel field-effect transistor: DC and RF performance analysis","authors":"E. Nivedha,&nbsp;Rajesh Agarwal","doi":"10.1016/j.micrna.2025.208254","DOIUrl":"10.1016/j.micrna.2025.208254","url":null,"abstract":"<div><div>Flexible screens and e-papers need advanced devices and techniques for effective functionality. Organic thin film transistors (OTFTs), essential for these applications, face significant challenges due to short-channel effects (SCE), hindering current saturation at nano-dimensions. To address this challenge, doped organic tunnel field-effect transistors (O-TuFETs) have been suggested, although doping the organic transistors remains challenging and adds design complexity. To overcome these limitations, a novel dopingless DL O-TuFET is proposed utilizing work function engineering. A key challenge in DL tunnel transistors is ambipolarity; however, by tuning the work functions of the drain and source, as well as adjusting the drain to source voltage (V_DS) and gate length (L_G), ambipolarity can be effectively suppressed. The key performance metrics of DL O-TuFET achieve a threshold voltage (V_TH) of −2.5 V, a subthreshold swing (SS) of 155 mV/decade, a maximum ON current of 2.03 μA and an ON/OFF current ratio of approximately 10¹² with the inclusion of bulk and interface trap defects. These characteristics make the DL O-TuFET an attractive option for powering flexible display systems. A maximum cut-off frequency (f_t) of 0.04 GHz highlights its suitability for moderate-speed, flexible electronics.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208254"},"PeriodicalIF":2.7,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144510946","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A first-principles study on CO and CO2 gas removal and sensing on Cu and Ni-decorated Zn12O12 surfaces","authors":"H.O. Al-Nadary ,&nbsp;Kh.M. Eid ,&nbsp;H.Y. Ammar ,&nbsp;H.M. Badran","doi":"10.1016/j.micrna.2025.208253","DOIUrl":"10.1016/j.micrna.2025.208253","url":null,"abstract":"<div><div>The influence of transition metal (TM = Cu and Ni) doping on the electronic, magnetic, and optical sensing characteristics of the Zn₁₂O₁₂ nano-cage for CO and CO₂ detection utilizing DFT and TD-DFT calculations has been performed. The stability and chemical reactivity of the proposed TMZn₁₂O₁₂ nano-cage have been checked. The impact of CO and CO₂ gas adsorption on the energy gap (E_g), electrical conductivity, magnetic moment, and UV–Vis spectra of the pristine and TM-doped Zn₁₂O₁₂ nano-cages has been scrutinized. NBO charge, charge density difference, quantum theory atom in a molecule, recovery time, and thermodynamic analyses have been achieved. The results show that the CO and CO₂ gases are chemically adsorbed on the pristine Zn₁₂O₁₂ and TMZn₁₂O₁₂ nano-cages. The Ni and Cu doping narrowed the E_g of the Zn₁₂O₁₂ to 1.892 and 1.639 eV, respectively. The CO and CO₂ gas adsorption narrowed the energy gap of the NiZn₁₂O₁₂ nano-cage to 32.9 % and 79.3 % of its value. The CO and CO₂ gas adsorption decreases the total magnetic moment for the TMZn₁₂O₁₂ nano-cages. The Ni and Cu doping shifts the maximum absorbance peak of the Zn₁₂O₁₂ nano-cage from 380 nm to 558 and 469 nm, respectively. Additionally, the CO adsorption causes a red shift, whereas the CO₂ adsorption causes a blue shift for the adsorption peaks of the TMZn₁₂O₁₂ nano-cages in the visible region. Thus, our results may be fruitful for designing novel electrical, magnetic, and optical gas sensors for CO and CO₂ gases based on the NiZn₁₂O₁₂ and CuZn₁₂O₁₂ nano-cages.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208253"},"PeriodicalIF":2.7,"publicationDate":"2025-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144472070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fringe gate capacitance model for nanowire reconfigurable field effect transistors","authors":"Mengge Jin ,&nbsp;Fu Gong ,&nbsp;Yang Shen ,&nbsp;Yuhang Zhang ,&nbsp;Bingyi Ye ,&nbsp;Shaoqiang Chen ,&nbsp;Xinyu Dong ,&nbsp;Fei Lu ,&nbsp;Ziyu Liu ,&nbsp;Xiaojin Li ,&nbsp;Yanling Shi ,&nbsp;Yabin Sun","doi":"10.1016/j.micrna.2025.208249","DOIUrl":"10.1016/j.micrna.2025.208249","url":null,"abstract":"<div><div>In this work, an analytical model for the fringe gate capacitance in nanowire reconfigurable field effect transistors (RFETs) is proposed to address the increasing complexity of advanced RFET designs. The model's accuracy is validated using the 3-D field solver ensuring reliable performance predictions. To enhance the precision of the model, empirical parameters are incorporated into the model for different components of the nanowire structure. These parameters are designed to calibrate the effective width of ring-shaped capacitors and correct errors in electric field line distribution. The impact of device parameter variations on the overall fringe gate capacitance and model accuracy was evaluated with the root mean square error (RMSE) within 2.18 % error compared to the simulation values. The parasitic capacitance model can be embedded into machine learning-extracted RFET circuits to further simulate its impact on circuit performance. Results indicate that parasitic capacitance significantly increases circuit delay by up to 20.9 %. These findings underscore the importance of accurately modeling fringe gate capacitance in optimizing RF transistor circuit designs to enhance performance.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208249"},"PeriodicalIF":2.7,"publicationDate":"2025-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144492053","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation and performance of sodium vanadate cathode with microporous structure for aqueous zinc - Ion batteries","authors":"Lubo Li ,&nbsp;Wenjing Tang ,&nbsp;Si Huang ,&nbsp;Aokui Sun","doi":"10.1016/j.micrna.2025.208251","DOIUrl":"10.1016/j.micrna.2025.208251","url":null,"abstract":"<div><div>Aqueous zinc - ion batteries (AZIBs) stand out among numerous battery systems due to their remarkable features such as high discharge capacity, low cost, and environmental friendliness. They are regarded as one of the promising alternatives for advanced energy storage systems. However, traditional AZIBs cathode materials still face many problems, including structural collapse and the dissolution of active substances. In this study, a precursor containing ammonium ions was prepared by the hydrothermal method. Through calcination in air, part of the ammonium ions escaped from the main structure in the form of ammonia gas, thus obtaining a sodium vanadate (NaV₆O₁₅) cathode material rich in a microporous structure. With the introduction of micropores, the overall electrochemical performance of the material has been significantly improved. The first charge/discharge specific capacity of the electrode reaches 500.2/497.5 mAh g⁻¹. After 70 cycles, the specific capacity is 450.7 mAh g⁻¹, and the capacity retention is approaching 100 %. Based on the modified electrode, the specific capacity has increased by 158.1 mAh g⁻¹. The results of ex-situ XPS spectra indicate that the structure of the NaV₆O₁₅ cathode material is relatively stable and suitable for the insertion and extraction of Zn²⁺.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208251"},"PeriodicalIF":2.7,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144364618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A comprehensive analysis of SNSFET, HS-NSFET and PHS-NSFET: Temperature and channel doping perspective","authors":"M. Balasubrahmanyam,&nbsp;Ekta Goel","doi":"10.1016/j.micrna.2025.208252","DOIUrl":"10.1016/j.micrna.2025.208252","url":null,"abstract":"<div><div>This study examines the impact of temperature and channel doping on the performance of three advanced gate-all-around field effect transistor designs i.e. Stacked nanosheet FET (SNSFET), H-shaped NSFET (HS NSFET), and the Pyramidal H-shaped NSFET (PHS NSFET) using sentaurus TACD tool. Various DC parameters such as drain-induced barrier lowering (DIBL), I_ON, I_ON/I_OFF ratio, subthreshold swing (SS), and threshold voltage (V_th), and AC/RF parameters such as transconductance (g_m), gate-gate capacitance (C_gg), cut-off frequency (f_T), gain bandwidth product (GBP), and transconductance frequency product (TFP) are evaluated at different temperatures of 250 K, 300 K, 350 K, and 400 K, for different channel doping concentrations of 10¹⁵ cm⁻³, 10¹⁶ cm⁻³, 10¹⁷ cm⁻³, and 10¹⁸ cm⁻³. The PHS NSFET shows, less variation in its DC/Analog parameters with respect to temperature, compared to SNSFET and HS NSFET proving PHS NSFET thermally stable for next generation semiconductor technologies. The PHS NSFET is found to have high noise margin compared to SNSFET and HS NSFET.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208252"},"PeriodicalIF":2.7,"publicationDate":"2025-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144364619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of light trapping from P–N Interleaved Structure-based absorber layer for the efficiency enhancement of In0.4Ga0.6N homo junction solar cell","authors":"Swati S. Soley ,&nbsp;Shrikant Verma ,&nbsp;Narendra Khatri","doi":"10.1016/j.micrna.2025.208250","DOIUrl":"10.1016/j.micrna.2025.208250","url":null,"abstract":"<div><div>Fossil fuels contribute over 80 % of the total energy use worldwide. The growing demand for electricity, the limited storage of fossil fuels, and the threat of global warming have necessitated adopting alternate energy sources. Solar energy is gaining popularity as a clean, renewable, and environmentally friendly alternative energy source. Consequently, the solar cell industry is rapidly expanding accompanied by discoveries in novel materials, solar cell structures, and processing methods advancements. Thin film solar cells are currently being investigated as an alternative to silicon solar cells, whose efficiency is approaching the theoretical maximum. Emerging materials like InGaN are currently being studied for thin film solar cells that may be manufactured with minimal material use while producing high efficiency. The key objective of this research is to design and simulate a novel structure of an InGaN single homo junction solar cell by employing an effective light management scheme that produces a large short-circuit current and efficiency while maintaining the thickness of the device. This study proposes modifying the structure of an InGaN solar cell by inserting an array of P–N Interleaved Structure (PNIS) for efficient light trapping of incident solar radiation to enhance the solar cell's efficiency. The device structure and material parameters were optimized by evaluating the effect of absorber thickness, base thickness, and acceptor doping concentration on the performance parameters of the planar and PNIS-based solar cells. Simulation results reveal that the performance of optimized PNIS-based InGaN solar cells improved as compared to reference planar solar cell. For the PNIS-based solar cell, efficiency and J_SC were improved by 10 %, and V_OC was increased by 8 % as compared to the parameters of the planar solar cell. The results indicate that the proposed PNIS-based solar cell structure can be effectively employed to create thin film and tandem solar cells.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208250"},"PeriodicalIF":2.7,"publicationDate":"2025-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144472017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Radiation resilience of Silicon-On-Insulator Vertical Super Thin Body (SOI VSTB) field-effect transistors: A TCAD simulation study on SEE effects","authors":"Vikas Kumar ,&nbsp;Rajesh Saha ,&nbsp;Srimanta Baishya","doi":"10.1016/j.micrna.2025.208238","DOIUrl":"10.1016/j.micrna.2025.208238","url":null,"abstract":"<div><div>-The heavy-ion analysis of the Silicon-On-Insulator Vertical Super Thin Body (SOI VSTB) FET results in the generation of a single-event transient (SET) pulse in the drain current. This study explores the effects of heavy-ion radiation on the SOI VSTB FET, beginning with ion strikes at three distinct locations to identify the most sensitive region of device. The heavy-ion generation rate and the collected charge are extracted for these locations, and the analysis is extended by varying the angle of ion incidence (0⁰, 30⁰, 45⁰, 60⁰, and 90⁰), while maintaining a constant linear energy transfer LET = 20 MeV cm². Furthermore, similar investigations are conducted across varying LET values and the bipolar gain is calculated for heavy-ion strikes within the channel region. The transient current response of the SOI VSTB FET is compared with previously published results for conventional FETs, demonstrating the performance and sensitivity of device under high-radiation conditions and comparison analysis of alpha particle with heavy ion radiation also discussed. This work highlights the importance of analyzing heavy-ion effects to improve the resilience and reliability of SOI VSTB FETs in radiation-intense environments.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208238"},"PeriodicalIF":2.7,"publicationDate":"2025-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144263811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Noise immune dielectric modulated transparent ZnO based DMBG-TFT for biosensing application","authors":"Binay Binod Kumar ,&nbsp;Sandeep Raj ,&nbsp;Kunal Singh ,&nbsp;Kavindra Kumar Kavi ,&nbsp;Sanjay Kumar","doi":"10.1016/j.micrna.2025.208248","DOIUrl":"10.1016/j.micrna.2025.208248","url":null,"abstract":"<div><div>This paper presents a transparent dielectric-modulated bottom-gate thin film transistor (DMBG-TFT) designed for biosensing applications, featuring a small cavity for detecting biomolecules. The study examines changes in the switching current I_ON/I_OFF ratio, threshold voltage (V_Th), and subthreshold swing (SS) due to variations in physical parameters, followed by an evaluation of sensitivity for biomolecule sensing. The biosensor demonstrates a <strong>sensitivity of ∼170</strong> for bacteriophage detection, influenced by lateral/vertical nano-gap filled by biomolecules, the channel lengths, thicknesses, and the work function of DMBG-TFT biosensors. These parameters are statistically evaluated using the <strong>coefficient of variation (COV) percentage.</strong> Moreover, the addition of bacteriophages reduces the <strong>minimum noise figure (NF_min) by 36 %</strong>, alongside a <strong>∼30 % decrease in autocorrelation and cross-correlation noise,</strong> enhancing noise resilience. The biosensor's high sensitivity and low-noise performance make it a promising tool for biomolecule detection. The incorporation of ZnO into TFT technology is also compatible with current CMOS platforms, supporting the early detection of protein-related diseases. These cost-effective biosensors are crucial for early-stage diagnostics, offering enhanced sensitivity for a wide range of biological and medical applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208248"},"PeriodicalIF":2.7,"publicationDate":"2025-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144271393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}