Micro and Nanostructures最新文献

{"title":"The role of thickness improvement and optimization in BMZO/Ag/BMZO sandwich transparent electrodes","authors":"Yuechan Li ,&nbsp;Lu Wang ,&nbsp;Xi Chen ,&nbsp;Xiuxiu Li ,&nbsp;Yuejie Li ,&nbsp;Guang Yang ,&nbsp;Haoran Qin ,&nbsp;An Xie ,&nbsp;Dongya Sun","doi":"10.1016/j.micrna.2025.208182","DOIUrl":"10.1016/j.micrna.2025.208182","url":null,"abstract":"<div><div>A BMZO (B–Mg co-doped ZnO)/Ag/BMZO multilayer film was prepared and studied via magnetron sputtering method. A continuous metal layer was formed by inserting a metal Ag layer between the two dielectric layers with a thickness of 15 nm, providing a complete conductive pathway. The electrical performance improved significantly, with a resistivity of 4.55 × 10⁻⁴ Ω cm. A metal-semiconductor heterojunction was formed at the interface, where electrons transferred from Ag to BMZO, creating an electron accumulation layer and improving carrier concentration and mobility. The average transmittance in the visible light region reached over 80 %. By optimizing the top BMZO layer thickness, the average transmittance of the composite film increased to 90 % while maintaining comparable electrical performance. XPS data analysis indicated that surface defects mainly originated from oxygen vacancies.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208182"},"PeriodicalIF":2.7,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143863340","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical research on a switchable trifunctional broadband terahertz absorber based on graphene and vanadium dioxide resonators","authors":"Dan Hu ,&nbsp;Hongwei Shang ,&nbsp;Yaqin Li ,&nbsp;Mingchun Feng ,&nbsp;Gui Yang ,&nbsp;Qiaofen Zhu ,&nbsp;Rongping Jiang","doi":"10.1016/j.micrna.2025.208179","DOIUrl":"10.1016/j.micrna.2025.208179","url":null,"abstract":"<div><div>The development of broadband perfect absorbers with tunable absorption, multiple broadband capabilities, and versatile switching functionalities remains a significant challenge in the field of metamaterials. In this paper, we propose a switchable trifunctional broadband terahertz (THz) absorber based on a hybrid structure of graphene and vanadium dioxide (VO₂) resonators. When VO₂ is in its insulating state with a conductivity of 200 S/m and the Fermi energy of graphene is set to 0.9 eV, the structure operates as a low-frequency single-broadband absorber, achieving over 90 % absorption in the frequency range of 0.48–2.10 THz, corresponding to a fractional bandwidth of 125.6 %. Remarkably, the functionality of the absorber can be dynamically adjusted. For instance, when the Fermi energy of graphene is fixed at 0.01 eV and the conductivity of VO₂ is increased to 1 × 10⁴ S/m, the structure functions as a dual-broadband absorber, exhibiting over 90 % absorption in two distinct frequency ranges: 0.64–2.02 THz and 3.23–4.57 THz, with fractional bandwidths of 100 % and 33.6 %, respectively. Further increasing the conductivity of VO₂ to 2 × 10⁵ S/m transforms the absorber into a high-frequency single-broadband absorber, covering a broad frequency range of 0.94–4.56 THz with a fractional bandwidth of 131.6 %. Additionally, the proposed absorber exhibits angle-insensitive absorption properties, making it a promising candidate for applications in thermal emitters, detectors, and tunable absorption filters.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208179"},"PeriodicalIF":2.7,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143855506","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Diminishing photoactivity in microwave-synthesized vanadium-doped TiO2: Resolving the paradox of defect-mediated charge recombination","authors":"Arrak Klinbumrung ,&nbsp;Suriyong Prachakiew ,&nbsp;Samor Boonphan ,&nbsp;Chatdanai Boonruang ,&nbsp;Yanee Keereeta","doi":"10.1016/j.micrna.2025.208181","DOIUrl":"10.1016/j.micrna.2025.208181","url":null,"abstract":"<div><div>Vanadium-doped TiO₂ photocatalysts with varying V concentrations (0–2 mol%) were synthesized via a microwave-assisted solution chemistry method and subsequently calcined at 300 °C. The structural, morphological, and optical properties of TiO₂ and V doped-TiO₂ at a concentration of 0.5–2 mol% were systematically analyzed using XRD, SEM, FT-IR, UV–Vis, and PL spectroscopy. XRD analysis confirmed the formation of the anatase TiO₂ phase, while dislocation density (δ) and strain (<em>ε</em>) calculations revealed an increase in structural defects with higher V doping levels, affecting crystallinity. Band gap analysis indicated a reduction from 3.11 eV (TiO₂) to 2.81 eV (2 mol% V–TiO₂), attributed to the introduction of localized defect states. Photocatalytic degradation of Rhodamine B (RhB) under UV light for 240 min showed that pure TiO₂ exhibited the highest degradation efficiency (96.97 %), followed by 0.5 mol% V–TiO₂ (95.14 %) and 2 mol% V–TiO₂ (75.75 %). PL analysis further confirmed that moderate V doping enhanced charge carrier separation, whereas excessive doping promoted tunneling-mediated recombination. These findings provide valuable insights into the defect-driven charge dynamics in V-doped TiO₂, emphasizing the significant impact of dopant concentration on enhancing photocatalytic efficiency.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208181"},"PeriodicalIF":2.7,"publicationDate":"2025-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143868868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancing thermoelectric performance of p-type Mg2Si through doping: A first-principles study","authors":"Piyawong Poopanya ,&nbsp;Saowalak Siatrakool ,&nbsp;Pratik M. Gadhavi ,&nbsp;Kanchana Sivalertporn","doi":"10.1016/j.micrna.2025.208180","DOIUrl":"10.1016/j.micrna.2025.208180","url":null,"abstract":"<div><div>This study investigates the structural and transport properties of p-type doped Mg₂Si using first-principles calculations. The focus is on doping Mg₂Si with Li, Ga, F, and LiGaF to enhance its thermoelectric performance. The formation energy (<span><math><mrow><mo>Δ</mo><mi>E</mi></mrow></math></span>), lattice constant, Seebeck coefficient, electrical conductivity, and power factor are systematically analyzed to determine the impact of doping on the material's properties. Our results show that doping with Li at the Mg site, Ga at the Si site, and F at the 4b site results in the most stable p-type Mg₂Si structure, with the lowest <span><math><mrow><mo>Δ</mo><mi>E</mi></mrow></math></span> values. These dopants improve p-type conductivity and optimize the thermoelectric performance, particularly in the temperature range of 500–1000 K. The calculated transport properties reveal that Li- and F-doped Mg₂Si exhibit superior performance at high temperatures, making them promising candidates for thermoelectric applications. This research lays the groundwork for future experimental efforts to enhance the thermoelectric efficiency of p-type Mg₂Si.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208180"},"PeriodicalIF":2.7,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143855505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An easily available and flexible fabrication protocol for microstructures by using printed mask projection lithography and silver mirror reaction","authors":"Hao-Dong Ling ,&nbsp;Ya-Dong Luo ,&nbsp;Guo-Juan Xu ,&nbsp;Ying-Zhi He ,&nbsp;Shi-Tong Xu ,&nbsp;Ren-De Ma ,&nbsp;Hong-Zhong Cao","doi":"10.1016/j.micrna.2025.208170","DOIUrl":"10.1016/j.micrna.2025.208170","url":null,"abstract":"<div><div>Because of the expensive prices of machines and masks, the projection lithography was limited in many applications. Here, projection lithography with printed masks was systematically investigated, and it provided an easily available and low-cost lithography method. Trenches of diverse microstructures, such as square helix circuit microstructure and microelectrode array structure, were all fabricated in AZ 5214E photoresist film by using this lithography method. The fabricated microstructures in photoresist film were also transferred to silver microstructures by using silver mirror reaction. Silver microstructures with resistivity of 7.45 × 10⁻⁸ Ω·m were achieved. Functional microstructures of a catalytic reactor of micro pit array and a rectangular helix microheater were also fabricated by using this combined method. This work demonstrates a low-cost, easily available and flexible method for lithography of diverse microstructures, and fabrication of functional microstructures of MEMS, sensors, catalysts and metamaterials.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208170"},"PeriodicalIF":2.7,"publicationDate":"2025-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143859311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Label-free biosensor with multidimensional aspects of a molybdenum di-sulfide dual-gate Schottky tunnel field-effect transistor (D-G-STFET)","authors":"Anusuya Periyasami ,&nbsp;Prashanth Kumar","doi":"10.1016/j.micrna.2025.208178","DOIUrl":"10.1016/j.micrna.2025.208178","url":null,"abstract":"<div><div>In this research, we presented a simulation of a MoS₂-based dual-gate Schottky barrier tunnel field-effect transistor (D-G-STFET) with high-k dielectric (TiO₂), emerging as a promising device for detecting biomolecules. The source and drain regions consist of metals selected based on their work functions. Furthermore, the channel is made of MoS₂, with zirconium as the gate material, to enhance D-G-STFET biosensor performance. Using dual cavities etched beneath the dual gate electrode of the biosensor promotes biomolecule immobilization. Moreover, biomolecule immobilization, along with their charge density and dielectric constant (k), collectively alters the effective dielectric constant of the gate oxide. Which leads to changes in surface potential and drain current, ultimately determining the sensitivity of the biomolecules. We characterized the MoS₂ effect on the proposed biosensor device in terms of drain current, potential, electric field, conduction and valence band energy, and sensitivity of charged and neutral biomolecules. Additionally, we analyzed the influence of temperature on the proposed and conventional devices. Here, the proposed device shows superior performance than the silicon and GaN material of conventional devices. Proposed and conventional device simulations are calculated using SILVACO TCAD tool.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208178"},"PeriodicalIF":2.7,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143868867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Strain-engineered ZrSSe/Ga2SSe vdW heterostructure with enhanced visible light harvesting and high solar-to-hydrogen efficiency","authors":"Isam Allaoui ,&nbsp;Abdallah El Kenz ,&nbsp;Abdelilah Benyoussef ,&nbsp;Mohamed Khuili ,&nbsp;Nejma Fazouan","doi":"10.1016/j.micrna.2025.208174","DOIUrl":"10.1016/j.micrna.2025.208174","url":null,"abstract":"<div><div>The growing global energy demand challenges the scientific community to develop innovative technologies, including the design of van der Waals (vdW) heterostructures, to address this issue. In response, we constructed a ZrSSe/Ga₂SSe vdW heterostructure by stacking ZrSSe on Ga₂SSe monolayers and investigated its potential applications in optoelectronics and as a photocatalyst for water splitting using first-principles calculations. The stability of this vdW heterostructure was confirmed through binding energy calculations and ab initio molecular dynamics (AIMD) simulations, further supported by determining various elastic coefficients, which demonstrated its mechanical stability. The calculated indirect band gap revealed a Type-I band alignment that can shift to Type-II by applying tensile biaxial strain up to 4 %. A substantial electrostatic potential drop (7.21 eV) across the ZrSSe/Ga₂SSe interface is expected to inhibit electron-hole pair recombination and facilitate effective separation, thereby enhancing photocatalytic activity. Notably, under tensile strain, the band edges of this heterostructure straddle the water redox potential at pH = 7, solar energy utilization is demonstrated by the high efficiency of solar-to-hydrogen conversion (17.64 %) at tensile strain of 1 %. The Gibbs free energy of HER is also calculated, indicating promising potential for experimental preparation as a photocatalyst. Moreover, our findings suggest that the ZrSSe/Ga₂SSe vdW heterostructure exhibits significantly stronger optical activity than the individual monolayers, with strain-enhanced absorption covering the ultraviolet, visible, and infrared regions, reaching a maximum light absorption value of 3 × 10⁵ cm⁻¹ in the visible range at 6 % strain. Consequently, this newly designed ZrSSe/Ga₂SSe vdW heterostructure demonstrates substantial potential for solar energy conversion applications and serves as a promising photocatalyst for water splitting.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208174"},"PeriodicalIF":2.7,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143863339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Negative capacitance FinFETs for low power applications: A review","authors":"Ayushi Lamba ,&nbsp;Rishu Chaujar ,&nbsp;M. Jamal Deen","doi":"10.1016/j.micrna.2025.208177","DOIUrl":"10.1016/j.micrna.2025.208177","url":null,"abstract":"<div><div>One of the most crucial factors that dictate the current-voltage (I–V) behavior of metal oxide semiconductor field-effect transistors (MOSFETs) is the source-to-drain barrier under the control of the gate voltage, V_G. Boltzmann statistics predict that the gate voltage for a conventional MOSFET has to be as high as 60 mV to increase the magnitude of the current by a factor of ten. This “Boltzmann tyranny” puts a minimum voltage limit on the threshold voltage at about 0.3 V while preserving an on-off current ratio of five decades, I_on/I_off. In IoT (Internet of Things), where the dissipation of power is critical, devices that reduce the subthreshold swing are extremely desirable to ensure efficient computation. NC FinFETs have proven to be one of the more promising areas of research as they exhibit the potential to benefit from simplified fabrication, seamless process integration, suppression of SCEs, and better current drive through a lower subthreshold swing. This article provides an in-depth examination of the state-of-the-art in NC FinFET technology with regard to improvements in the most critical device parameters such as drain current, switching ratio, subthreshold swing, and hysteresis. Furthermore, a comparative analysis of various NC FinFETs for low-power applications, and a summary of the findings from multiple criteria such as fabrication feasibility and design constraints are given.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208177"},"PeriodicalIF":2.7,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143855503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance enhancement of perovskite solar cells based on spherical metasurface","authors":"Zilin Zhu ,&nbsp;Tian Sang ,&nbsp;Guilin Liu ,&nbsp;David Perez De Lara ,&nbsp;Yueke Wang","doi":"10.1016/j.micrna.2025.208171","DOIUrl":"10.1016/j.micrna.2025.208171","url":null,"abstract":"<div><div>Perovskite solar cells (PSCs) are hot topics in the energy community due to their high absorption capacity, simple fabrication process, and low production costs. However, to enhance the optoelectronic performance of photonic devices, it is essential to advance high-quality photon management and superior optical design. This study utilizes optical metasurfaces to modulate light focusing and enhance light absorption. Single-hemispherical and double-hemispherical metasurfaces are added to planar conventional PSCs to improve the absorption of the device respectively, thus enhancing photovoltaic conversion efficiency. The integrated irradiance of perovskite is calculated for evaluating the light absorption capacity of the cells, and three-dimensional optical and semiconductor finite element method simulations are conducted to optimize structural parameters. Ultimately, compared with the PSC planar, the short-circuit current density is increased by 20.5 %, and the power conversion efficiency is improved by 22 % for the PSC integrated with the double-hemispherical metasurface. This proposed design exhibits certain angular stability and polarization insensitivity, making it widely applicable in the photovoltaic industry and providing crucial support for the further advancement of photovoltaic technology.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208171"},"PeriodicalIF":2.7,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143855418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Modeling and design of non-fullerene organic solar cells using pyramidal lens arrays","authors":"Asma Iqbal Wani ,&nbsp;Farkhanda Ana ,&nbsp;Najeeb-Ud-Din Hakim","doi":"10.1016/j.micrna.2025.208175","DOIUrl":"10.1016/j.micrna.2025.208175","url":null,"abstract":"<div><div>Addressing front-end reflection in solar cells poses a significant challenge for Organic Photovoltaic (OPV) technology. Ongoing research endeavors aim to mitigate this reflection loss, with the adoption of various light-trapping and reflection-reducing mechanisms emerging as a promising solution. In this work, periodical structures in the form of pyramidal lens arrays (PLAs) have been studied for efficient photon management in organic solar cells (OSCs) made of high dielectric constant non-fullerene-based acceptor (NFA) active layers. When stacked on top of OSCs, these arrays reduce the overall reflection and increase the incident flux to the active layer, boosting exciton generation and overall cell efficiency. This approach could potentially be adopted as a prospective strategy in the future solar cell industry. For the first time, an analytical model is proposed to investigate the effect of the geometrical parameters and packing design of the PLAs on the optical generation rate. The interaction of the lateral surface area with the incoming light has also been considered. The highest power conversion efficiency and short circuit density are obtained with a filling ratio of 1 and an apex angle of 90°, demonstrating a remarkable improvement of over 12 % and 11 %, respectively, for the textured device compared to the planar configuration. The mathematical results obtained are in excellent agreement with the simulation results, thus proving the model's validity.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"204 ","pages":"Article 208175"},"PeriodicalIF":2.7,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143838202","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}