Micro and Nanostructures最新文献

{"title":"Simulation study of a 1200V 4H–SiC lateral MOSFETs with Double-RESURFs technology for reducing saturation current","authors":"Lijuan Wu,&nbsp;Jiahong He,&nbsp;Zhipeng Shen,&nbsp;Gengbin Zhu,&nbsp;Qiqi Tang,&nbsp;Zongyang Yi,&nbsp;Guanglin Yang,&nbsp;Deqiang Yang","doi":"10.1016/j.micrna.2025.208218","DOIUrl":"10.1016/j.micrna.2025.208218","url":null,"abstract":"<div><div>A 1200V 4H–SiC lateral double-diffused MOSFETs (LDMOS) with embedded auto-adjust JFET (AD-JEFT) and double-reduced surface fields technology is proposed. The AD-JEFT, as the conduction path of electrons from N+ source to the P-well channel, is embedded in P+ well. In the on-state, as the device is pressurized, the increase of depletion charge will reduce the effective channel width of AD-JFET. As a result, the potential barrier of the AD-JFET channel will increase rapidly, making it difficult for electrons to transfer and resulting in a reduction of the saturation current. Compared with the common LDMOS (C-LDMOS), the saturation current (<em>I</em>_dsat) of the proposed LDMOS with AD-JEFT (ADJ-LDMOS) is reduced by 53.3 %. Meanwhile, the short circuit capability is improved by 110.5 %. In addition, the top P-type region of ADJ-LDMOS is divided into a higher doped P-top region and a lower doped P-top2 region, which greatly improves the blocking ability. The breakdown voltage was increased by 21.9 % without increasing the specific on-resistance (<em>R</em>_on,sp).</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208218"},"PeriodicalIF":2.7,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144116808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization of double absorber antimony chalcogenide-based solar cells: A comprehensive parametric optimization to achieve 28.4 % conversion efficiency","authors":"Harshit Saxena ,&nbsp;Jaspinder Kaur ,&nbsp;Rikmantra Basu ,&nbsp;Ajay Kumar Sharma ,&nbsp;Jaya Madan ,&nbsp;Rahul Pandey","doi":"10.1016/j.micrna.2025.208215","DOIUrl":"10.1016/j.micrna.2025.208215","url":null,"abstract":"<div><div>Antimony Chalcogenides have recently gained prominence as preferable substitutes of hybrid halide perovskites for solar cell implementations because of their phase stability, high absorption coefficient, tunable bandgap and enhanced resilience to environmental degradation effects. They are relatively inexpensive and abundant in nature as well. This study focuses on comparing the photovoltaic parameters of the Antimony chalcogenides-based perovskite solar cell (PSC) with a back surface field layer (BSF) with the photovoltaic parameters of cell without BSF layer. While the study aims to analyse the effect of adding a BSF layer, we further refine the device architecture by calibrating parameters including thickness, doping concentrations and defect densities of the various layers incorporated in the device. The proposed model has double absorber layer (Sb₂S₃ and Sb₂Se₃) and incorporates BSF layer (WSe₂) to enhance photo-absorption and increase efficiency of solar cell. The model has been investigated using SCAPS-1D software. The proposed model is p⁺-WSe₂/p-Sb₂S₃/n-Sb₂Se₃/n-WS₂ (With BSF) and p-Sb₂S₃/n-Sb₂Se₃/n-WS₂ (without BSF). The structure without the BSF layer gives an optimized PCE of 25.06 % while the structure with BSF layer gives an optimized PCE of approximately 28.4 %. These optimized structures provide a comprehensive framework for developing non-toxic, durable and highly efficient photovoltaic devices utilizing chalcogenide perovskites. This work also offers valuable insights into bridging the gap between simulation-based approaches and real-world applications while addressing practical challenges in device implementation.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208215"},"PeriodicalIF":2.7,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144154394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Compact and energy efficient design of LIF neuron leveraging Zener breakdown for neuromorphic computing","authors":"Faisal Bashir","doi":"10.1016/j.micrna.2025.208208","DOIUrl":"10.1016/j.micrna.2025.208208","url":null,"abstract":"<div><div>In this paper, a single two terminal device (Zener diode) is used to construct a Leaky Integrate and Fire (LIF) neuron with significant improvement in energy efficiency, area and reduction in cost. Using calibrated 2D simulation, it has been confirmed that Zener diode based LIF neuron is able to imitate the neuron actions accurately. The Zener diode shows extremely sharper reverse breakdown voltage, the sharpness in the characteristics is responsible for achieving ultra-low energy per spike. The proposed Zener diode based LIF neuron needs only 86fJ/spike, which is 500 lower compared to recently reported Silicon on Insulator (SOI) based MOSFET, which needs 45pJ/spike of energy. Besides this, the proposed neuron design can be used to obtain neuron oscillation with different frequencies using an input current or capacitor values.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208208"},"PeriodicalIF":2.7,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144138358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and detailed electrical characterization of MoO3 supported Au/n-Si junction diodes","authors":"Zakir Çaldıran ,&nbsp;L. Bilal Taşyürek ,&nbsp;A. Rıza Deniz ,&nbsp;Mehmet Biber","doi":"10.1016/j.micrna.2025.208217","DOIUrl":"10.1016/j.micrna.2025.208217","url":null,"abstract":"<div><div>In this study, the effect of molybdenum trioxide (MoO₃) nanopowder as a thin film layer on the performance of junction diodes was investigated and the fabrication of Au/MoO₃/n-Si/Al device structure with this material was achieved. In the experimental process, Al was thermally deposited on one surface of the silicon wafer and annealed at 450 °C for 10 min to establish an ohmic contact. A thin film of MoO₃ approximately 15 nm thick was deposited on the n-Si surface by thermal evaporation at a 10⁻⁷ Torr high vacuum. On top of this layer, a 100 nm Au layer was deposited by thermal evaporation using a circular mask. The reference Au/n-Si/Al diode was fabricated under identical conditions without the MoO₃ layer to evaluate the influence of the oxide interlayer on the device characteristics. The electrical performance of the devices was characterized through I–V measurements at 300 K. The diode parameters, including the barrier height (BH) and the ideality factor (IF), were extracted using the TE theory and further analyzed using the Cheung and Norde techniques. The BH (Φ_b) and IF (n) values of the reference Au/n-Si/Al diode were calculated as 0.65 eV and 2.06, respectively. In contrast, the diodes with the MoO₃ interlayer exhibited Φ_b values ranging from 0.70 to 0.73 eV and n values between 1.69 and 1.73. The increased IF was attributed to the influence of series resistance, while the variations in BH were related to the properties of the MoO₃/n-Si interface. Among the devices fabricated, the diode with the best performance (referred to as device 2) showed an IF of 1.69 and a BH of 0.73 eV. This device was selected for detailed analysis and its characteristics were further examined using the Cheung and Norde methods. In addition, C–V, G-V, and Z-V measurements at various frequencies were used to derive key device parameters, particularly the BH, highlighting the role of frequency-dependent behavior.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208217"},"PeriodicalIF":2.7,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144105284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tailoring ZnO properties via La Doping: Improved photocurrent and pollutant degradation efficiency","authors":"R. Sai Gowri ,&nbsp;M. Mohamed Roshan ,&nbsp;M. Irfana Amrin ,&nbsp;R.M. Muthukrishnan ,&nbsp;P. Mohammed Yusuf Ansari ,&nbsp;M. Muthu Kathija ,&nbsp;S.M. Abdul Kader","doi":"10.1016/j.micrna.2025.208207","DOIUrl":"10.1016/j.micrna.2025.208207","url":null,"abstract":"<div><div>This study investigates the impact of La³⁺ doping on the structural, optical, magnetic, and photocatalytic properties of ZnO nanoparticles. Pristine and La³⁺ doped ZnO (2 %, 4 %, 6 %) were synthesized via a chemical co-precipitation method and characterized using X-ray diffraction (XRD), UV–visible spectroscopy, Fourier-transform infrared spectroscopy (FTIR), photoluminescence (PL) spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and vibrating sample magnetometer (VSM). Rietveld refinement of XRD data confirmed a hexagonal wurtzite structure in all samples, accompanied by strain-induced lattice distortions and atomic displacements due to La³⁺ incorporation. Optical analysis revealed a band gap reduction from 3.12 eV (pristine ZnO) to 2.93 eV for the 2 % La-doped sample, enhancing its visible light absorption. The quenching of PL spectra confirms the increased non-radiative recombination at higher doping levels. Electrochemical studies demonstrated that 2 % doping exhibited the lowest charge transfer resistance, yielding a photocurrent density of 0.36 mA, significantly higher than other concentrations. In photocatalytic testing under natural sunlight, the 2 % La-doped ZnO achieved 90 % degradation efficiency, outperforming other samples. These results underscore the optimized 2 % La-doped ZnO as a promising candidate for environmental remediation and energy harvesting applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208207"},"PeriodicalIF":2.7,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144123452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Innovative process for the production high-purity zeolites to passivate silicon's surface and bulk to improve electrical parameters","authors":"Wala Medfai ,&nbsp;Marouan Khalifa ,&nbsp;Rabia Benabderrahmane Zaghouani ,&nbsp;Selma Aouida ,&nbsp;Hatem Ezzaouia","doi":"10.1016/j.micrna.2025.208212","DOIUrl":"10.1016/j.micrna.2025.208212","url":null,"abstract":"<div><div>Metal impurities in silicon wafers severely degrade solar cell performance, with typical efficiency losses of 15–30 % due to reduced minority carrier lifetimes. While conventional gettering techniques achieve impurity reduction, they require high temperatures (&gt;850 °C) and can introduce wafer damage. This study demonstrates a novel low-temperature (350 °C) gettering approach using Heulandite-Na (HEU-Na) zeolite layers deposited on porous silicon substrates via sol-gel dip-coating. Microwave photoconductance decay (μW-PCD) measurements revealed that the HEU-Na gettering increased minority carrier lifetime from 1.44 μs to 30.68 μs - a 21-fold improvement that surpasses conventional PDG (typically 3-5x enhancement). Surface photovoltage analysis showed diffusion length improvements from 103.27 μm to 324.16 μm, while Hall effect measurements demonstrated a mobility increase from 209.49 to 732.93 cm²V⁻¹s⁻¹. The dual functionality of HEU-Na as both a gettering and passivation layer, combined with its low-temperature processing, offers a cost-effective and industry-scalable approach for improving silicon solar cell efficiency. This method's effectiveness at temperatures below 400 °C makes it particularly valuable for advanced cell architectures where high-temperature processing must be avoided. The findings demonstrate the potential of zeolite-based gettering to revolutionize silicon purification in both photovoltaic and semiconductor industries, potentially reducing manufacturing costs while improving device performance.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208212"},"PeriodicalIF":2.7,"publicationDate":"2025-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144098558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Surface plasmon resonance sensor for milk adulteration detection using a CaF2 prism, Ag film, and black phosphorus layer","authors":"Mohan Kumar Paswan,&nbsp;Rikmantra Basu","doi":"10.1016/j.micrna.2025.208193","DOIUrl":"10.1016/j.micrna.2025.208193","url":null,"abstract":"<div><div>We propose a novel surface plasmon resonance (SPR) sensor comprising a calcium fluoride (CaF₂) prism, silver (Ag) film, and black phosphorus (BP) layer for assessing milk quality and detecting adulteration. The sensor operates by measuring refractive index (RI) changes in adulterated milk samples placed on the BP layer. The CaF₂ prism, configured in the Kretschmann setup, facilitates the generation of surface plasmons in the Ag film. The resonance characteristics are calculated using the transfer matrix method (TMM). Refractive indices for CaF₂ and Ag are derived using the Sellmeier equation and Lorentz-Drude model, respectively, at a wavelength of 662 nm. Our proposed design, using the CaF₂ prism, achieves a sensitivity of 574°/RIU for RI variations between 1.331 and 1.336 (<span><math><mrow><mi>Δ</mi><msub><mrow><mi>n</mi></mrow><mrow><mi>s</mi></mrow></msub><mo>=</mo><mn>0</mn><mo>.</mo><mn>005</mn></mrow></math></span>), representing a significant improvement of 98.62% compared to the 289°/RIU sensitivity obtained with a BK7 prism under similar conditions. This enhancement demonstrates the superior performance of CaF₂ over BK7 in SPR-based sensing. To optimize performance, the thicknesses of the Ag and BP layers are systematically adjusted. The results are benchmarked against recent metal-membrane-based SPR sensors, demonstrating superior performance. This innovative design holds significant potential for precise milk quality assessment.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208193"},"PeriodicalIF":2.7,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144069489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-sensitive MDM plasmonic sensor for refractive index, CO2 concentration, biomolecule, and temperature detection","authors":"Diksha Chauhan ,&nbsp;Ram Prakash Dwivedi ,&nbsp;Zen Sbeah ,&nbsp;Vishal Sorathiya ,&nbsp;Sheng Hsiung Chang","doi":"10.1016/j.micrna.2025.208211","DOIUrl":"10.1016/j.micrna.2025.208211","url":null,"abstract":"<div><div>This paper presents a metal-dielectric-metal configuration based plasmonic refractive index sensor for applications like gas, biomolecule and temperature detection. The device consists of a rectangular ring resonator coupled to a straight waveguide. Initially the device has shown its application as a simple refractive index sensor, where the device can sense refractive indexes in the range from 1.0 to 1.1 with the maximum sensitivity of 2400 nm/refractive index unit (RIU). This device is used as a gas sensor for detecting the concentration of CO₂, for that Polyhexamethylene biguanide (PHMB) is added to the rectangular ring resonator and then by changing the refractive index of PHMB layer via adsorbing CO₂ molecules, the change in the concentration of CO₂ gas is detected. A sensitivity of 46.51 p.m./parts per million (ppm) is theoretically obtained for the different concentrations of CO₂ from 0 ppm to 524 ppm. Then the device is simulated to sense various biomolecules, where detection of colorless biomaterial, anemia, creatinine and prostate cancer is performed. In the detection of anemia, the sensitivity of 3333nm/RIU is predicted. Additionally, for colorless biomolecules, static sensitivity of 2000 nm/RIU, for creatinine maximum sensitivity of 1500nm/RIU and maximum sensitivity of 2259.8 nm/RIU is predicted for prostate. Besides, this device is also used as a temperature sensor by using the Polydimethylsiloxane (PDMS) as the dielectric material, whose refractive index changes from 1.3861 to 1.4041 for different temperatures ranging between 80 °C and 20 °C. For the temperature detection, the sensitivity of 2 nm/°C is predicted.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208211"},"PeriodicalIF":2.7,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144071559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Molecular dynamics simulation of competitive crystal growth of in SiC with different nuclei: Temperature-dependent crystallization and defect formation","authors":"Tinghong Gao ,&nbsp;Qinlan Pan ,&nbsp;Kaiwen Li ,&nbsp;Guiyang Liu ,&nbsp;Wanjun Yan","doi":"10.1016/j.micrna.2025.208209","DOIUrl":"10.1016/j.micrna.2025.208209","url":null,"abstract":"<div><div>Silicon carbide (SiC), a third-generation semiconductor distinguished by its wide bandgap, superior thermal conductivity, and exceptional electron saturation velocity, has become indispensable for aerospace and defense systems requiring extreme operational reliability. Optimizing SiC's crystalline perfection is critical for high-power devices, necessitating atomic-scale insights into its growth thermodynamics. This study conducted large-scale molecular dynamics simulations to elucidate polytype-specific crystallization mechanisms in pure SiC melts across 2800–3250 K. Radial distribution function analysis, time-resolved crystallization kinetics, and defect visualization revealed temperature-dependent growth regimes: low-temperature conditions exhibited nucleation suppression, while high-temperature regimes promoted competitive growth between cubic (3C–SiC) and hexagonal (4H–SiC) polytypes, highlighting the importance of temperature control in optimizing crystal quality. This study enhances our understanding of the crystallization process of SiC and provides theoretical insights for the production of high-performance power semiconductors.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208209"},"PeriodicalIF":2.7,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploration of second and third-harmonic generation in quantum ring/envelopping oxides subjected to a lateral electric field: Case of GaAs/ AlxGa1-xAs","authors":"K. Hasanirokh ,&nbsp;A. Naifar","doi":"10.1016/j.micrna.2025.208210","DOIUrl":"10.1016/j.micrna.2025.208210","url":null,"abstract":"<div><div>For the first time, this research unlocks the mysterious behavior of localized electrons within a quantum ring (QR) exposed to a lateral x-axis electric flux in the presence of distinct enveloping oxidative environments. The parity symmetry with respect to the x-axis remains conserved, allowing us to classify the electron states based on their parity eigenvalues. Based on our conducted quantitative analysis, we have identified all the decisive metrics (radius ratio, width, relaxation time, electric strength, inner radius and host permittivity) that influence the amplitude of the wavefunction as well as its spatial extent. Second and third harmonic generation coefficients have also been scrutinized and the major outcomes revealed a strong sensitivity to the presence of neighboring oxides. The product of matrix elements exhibits a non-monotonic dependence on QR width, peaking at an intermediate value. With an increasing electrostatic flux ratios, all the resonant frequencies sweep across longer wavelengths with an amplitude improvement for small geometric ratios. The combination of all these factors is expected to open a new avenue for industrial research where QRs are predominantly selected as candidates.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208210"},"PeriodicalIF":2.7,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144148114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}