Micro and Nanostructures最新文献_第2页

Performance investigation of vertical TFET biosensor based on dual-source dual-channel trench gate

IF 2.7

Micro and Nanostructures Pub Date : 2025-03-07 DOI: 10.1016/j.micrna.2025.208129

Xingyu Wei, Hujun Jia, Linna Zhao, Qiyu Su, Weitao Cao, Wanli Yang, Zhen Cao, Yintang Yang

引用次数: 0

Optimization of pocket doped SOI TFET and analysis of interfacial trap charges

IF 2.7

Micro and Nanostructures Pub Date : 2025-03-07 DOI: 10.1016/j.micrna.2025.208134

S. Kumari, B.S. Saranya, S.M. Joseph, K. Vanlalawmpuia

{"title":"Optimization of pocket doped SOI TFET and analysis of interfacial trap charges","authors":"S. Kumari, B.S. Saranya, S.M. Joseph, K. Vanlalawmpuia","doi":"10.1016/j.micrna.2025.208134","DOIUrl":"10.1016/j.micrna.2025.208134","url":null,"abstract":"<div><div>This paper investigates the optimization of various parameters in the design of silicon-on-insulator (SOI) tunnel field-effect transistor (TFET) with pocket doping (PD-SOI TFET). By performing comprehensive simulations using Sentaurus TCAD and incorporating appropriate models, we systematically studied the effects of optimizing channel length (L<sub>CH</sub>), channel thickness (t<sub>CH</sub>), oxide thickness (t<sub>ox</sub>), pocket doping length (L<sub>PD</sub>), pocket doping material (PD<sub>m</sub>), and source/channel material. Our results show that there is an optimal design parameter for a channel length of 40 nm, a channel thickness of 10 nm, an oxide thickness of 2 nm, a pocket doping length of 2 nm, and the pocket doping material like germanium (Ge). Using Si as the source and Ge as the channel material, the device shows better performance. Additionally, the optimized PD-SOI TFET's interface trap charges have been studied. The existence of interface traps has an impact on the device's performance. In comparison to negative ITCs, positive ITCs provide higher electron band-to-band generation rate (eBTBT). For positive ITCs, the electric field yields larger values in the normal component, and for negative ITCs, higher values in the parallel component. The subthreshold slope degrades for positive ITCs and slightly reduces for negative ITCs. Further, the device’s performance is analyzed through studying the impact of interface traps on various analog/RF parameters including the Total gate capacitance (C<sub>gg</sub>), Gate to source capacitance (C<sub>gs</sub>), Gate to drain capacitance (C<sub>gd</sub>), transconductance (g<sub>m</sub>), and cut-off frequency (f<sub>T</sub>). Also, the linearity and distortion parameters have been analyzed in form of VIP2, VIP3, IIP3 and IMD3.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"202 ","pages":"Article 208134"},"PeriodicalIF":2.7,"publicationDate":"2025-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143592996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Comparative fabrication and performance of metal-semiconductor-metal and heterojunction near-infrared photodetectors using Ag-modified porous silicon

IF 2.7

Micro and Nanostructures Pub Date : 2025-03-06 DOI: 10.1016/j.micrna.2025.208130

Sayran A. Abdulgafar , Mohammed A. Ibrahem , Lary H. Slewa

{"title":"Comparative fabrication and performance of metal-semiconductor-metal and heterojunction near-infrared photodetectors using Ag-modified porous silicon","authors":"Sayran A. Abdulgafar , Mohammed A. Ibrahem , Lary H. Slewa","doi":"10.1016/j.micrna.2025.208130","DOIUrl":"10.1016/j.micrna.2025.208130","url":null,"abstract":"<div><div>The demand for advanced near-infrared (NIR) photodetectors has surged due to their applications in imaging, communications, and environmental monitoring. This study examines the photoelectric properties of porous silicon (PSi)-based NIR photodetectors modified with silver nanoparticles (AgNPs) in two configurations: metal-semiconductor-metal (MSM) (Au/AgNPs-PSi/Au) and heterojunction (Au/AgNPs-PSi/Si/Al). Device performance was evaluated via current-voltage characteristics under dark and illuminated conditions (850 nm, 20 W/cm<sup>2</sup>). At 5 V, the heterojunction detector achieved a sensitivity of 20.6 × 10<sup>2</sup> % and a responsivity of 1.8 mA/W, outperforming the MSM device (3.15 × 10<sup>2</sup> %, 1.48 mA/W). This enhancement is attributed to the built-in electric field at the junction, which promotes efficient carrier separation, and the optimized AgNP–PSi morphology that enhances light absorption. Additionally, the heterojunction device demonstrated faster rise and fall times, indicating improved carrier transport dynamics. This study provides insight into the design of high-performance NIR photodetectors using modified PSi and highlights the potential of heterojunction configurations for improved photodetection.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"202 ","pages":"Article 208130"},"PeriodicalIF":2.7,"publicationDate":"2025-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143601419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimisation of Ion/Ioff and transconductance of germanium based dual metal gate hetero-dielectric TFET

IF 2.7

Micro and Nanostructures Pub Date : 2025-03-05 DOI: 10.1016/j.micrna.2025.208128

D. Gracia , D. Jackuline Moni , D. Nirmal

{"title":"Optimisation of Ion/Ioff and transconductance of germanium based dual metal gate hetero-dielectric TFET","authors":"D. Gracia , D. Jackuline Moni , D. Nirmal","doi":"10.1016/j.micrna.2025.208128","DOIUrl":"10.1016/j.micrna.2025.208128","url":null,"abstract":"<div><div>This simulation study delves in to the exploration of Tunnel Field Effect Transistors (TFET) with Dual Metal Gate (DMG) hetero-dielectric structure incorporating a Germanium channel using simulations study in TCAD. The device efficiency measures such as current in the off-state (I<sub>off</sub>), on-state current (I<sub>on</sub>), switching efficiency of the current (I<sub>on</sub>/I<sub>off</sub>) are observed for the proposed device. The metrics are taken in comparison with the traditional DMG hetero-dielectric MOSFET. The recommended device exhibits a 74.8 % reduction in the Subthreshold Slope (SS) compared to the traditional DMG hetero-dielectric MOSFET. An enhanced I<sub>on</sub>/I<sub>off</sub> ratio of 4.669 × 10<sup>8</sup>for Ge channel TFET is observed over a conventional DMG MOSFET simulated under same environmental conditions. The performance analysis has been carried out for various channel thickness (t<sub>ch</sub>), oxide thickness (t<sub>ox</sub>), tunneling lengths (L1:L2) and different gate metal work functions. A detailed RF analysis for hetero dielectrics with HfO<sub>2</sub> near the source area and SiO<sub>2</sub> near the drain area is carried out for DMG Hetero Dielectric TFET. It is evident that positioning the low-k dielectric in close proximity to the drain region leads to the suppression of parasitic capacitances such as C<sub>gd</sub> and C<sub>gg</sub>. This characteristic enhances its suitability as a superior aspirant for nano digital applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"202 ","pages":"Article 208128"},"PeriodicalIF":2.7,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143571478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Device and circuit-level assessment of temperature variation on the DC, Analog/RF and linearity performance metrics of III-V TFETs for reliability

IF 2.7

Micro and Nanostructures Pub Date : 2025-03-03 DOI: 10.1016/j.micrna.2025.208114

Priyanka Verma, Satyendra Kumar

{"title":"Device and circuit-level assessment of temperature variation on the DC, Analog/RF and linearity performance metrics of III-V TFETs for reliability","authors":"Priyanka Verma, Satyendra Kumar","doi":"10.1016/j.micrna.2025.208114","DOIUrl":"10.1016/j.micrna.2025.208114","url":null,"abstract":"<div><div>This article presents a comprehensive comparative analysis of GaSb/Si Dual Material Stacked Double Gate Hetero Junction TFET (GaSb/Si DMSDG HJTFET) and <span><math><mrow><mi>G</mi><msub><mrow><mi>a</mi></mrow><mrow><mn>0</mn><mo>.</mo><mn>5</mn></mrow></msub></mrow></math></span> <span><math><mrow><mi>A</mi><msub><mrow><mi>s</mi></mrow><mrow><mn>0</mn><mo>.</mo><mn>5</mn></mrow></msub></mrow></math></span>Sb/<span><math><mrow><mi>I</mi><msub><mrow><mi>n</mi></mrow><mrow><mn>0</mn><mo>.</mo><mn>7</mn></mrow></msub></mrow></math></span> <span><math><mrow><mi>G</mi><msub><mrow><mi>a</mi></mrow><mrow><mn>0</mn><mo>.</mo><mn>3</mn></mrow></msub></mrow></math></span>As Ferroelectric Dual Material Stacked Double Gate Hetero Junction TFET (FDMSDG-HJTFET) at device-level as well as circuit-level under the influence of temperature variation for the first time. In this work, the effects of temperature variation in the range of 300 K to 420 K have been accounted. Here, the DC electrical parameters, analog/RF and linearity parameters of both devices have been investigated using Silvaco TCAD tool. Further, the impact of temperature variation on the performance at the circuit level is carried out through a resistive-load inverter with GaSb/Si DMSDG-HJTFET and FDMSDG-HJTFET, evaluating their DC and transient characteristics using HSPICE. The simulation results reveal that the FDMSDG-HJTFET device is more immune to temperature variations, in contrast to GaSb/Si DMSDG-HJTFET. Thus, it can be utilized for low-power, analog/RF and high-temperature applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"202 ","pages":"Article 208114"},"PeriodicalIF":2.7,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143580647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Silicon carbide MOSFETs: A critical review of applications, technological advancements, and future perspectives

IF 2.7

Micro and Nanostructures Pub Date : 2025-02-26 DOI: 10.1016/j.micrna.2025.208126

P. Sharmila , G. Supraja , D. Haripriya , C. Sivamani , A. Lakshmi Narayana

{"title":"Silicon carbide MOSFETs: A critical review of applications, technological advancements, and future perspectives","authors":"P. Sharmila , G. Supraja , D. Haripriya , C. Sivamani , A. Lakshmi Narayana","doi":"10.1016/j.micrna.2025.208126","DOIUrl":"10.1016/j.micrna.2025.208126","url":null,"abstract":"<div><div>The emergence of Silicon Carbide (SiC) power MOSFETs represents a revolutionary advancement in power semiconductor technology, fundamentally transforming the landscape of modern power electronics. This comprehensive review systematically analyzes the technological evolution, current state-of-the-art developments, and future trajectories of SiC MOSFET technology, encompassing device physics, structural innovations, manufacturing processes, and application-specific optimizations. Our analysis encompasses a detailed examination of device architectures, progressing from conventional planar structures through advanced trench designs to innovative hybrid configurations, elucidating their respective advantages, limitations, and specific design considerations. The review provides extensive coverage of manufacturing processes, reliability considerations, and optimization strategies that have enabled the achievement of remarkable performance benchmarks, including specific on-resistance values as low as 1.8 mΩ cm<sup>2</sup> at 1200V ratings. Special attention is devoted to electric vehicle applications, where SiC MOSFETs have demonstrated transformative capabilities through significantly improved system efficiency (>98 %), enhanced switching frequencies (>50 kHz), and superior thermal performance (up to 175 °C). This comprehensive analysis culminates in a detailed assessment of future prospects, examining potential technological trajectories, market dynamics, and emerging application domains. The review serves as a valuable resource for researchers, engineers, and practitioners in power electronics, providing both fundamental understanding and practical insights into the implementation of SiC MOSFET technology across diverse applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"202 ","pages":"Article 208126"},"PeriodicalIF":2.7,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143548726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A 4H–SiC TMOS with triple trenches and high-K dielectric 具有三沟槽和高介电性质的 4H-SiC TMOS

IF 2.7

Micro and Nanostructures Pub Date : 2025-02-26 DOI: 10.1016/j.micrna.2025.208125

Jiafei Yao , Ziwei Hu , Yeqin Zhu , Yuao Liu , Man Li , Kemeng Yang , Jing Chen , Maolin Zhang , Jun Zhang , Yufeng Guo

{"title":"A 4H–SiC TMOS with triple trenches and high-K dielectric","authors":"Jiafei Yao , Ziwei Hu , Yeqin Zhu , Yuao Liu , Man Li , Kemeng Yang , Jing Chen , Maolin Zhang , Jun Zhang , Yufeng Guo","doi":"10.1016/j.micrna.2025.208125","DOIUrl":"10.1016/j.micrna.2025.208125","url":null,"abstract":"<div><div>A novel 4H–SiC TMOS with triple trenches and high-K dielectric (TTHK-TMOS) is investigated. The main structural features include the triple trenches which are composed of a deep trench filled with high-K dielectric, a gate trench in the high-K dielectric deep trench and a source trench with P-type shielding layer. The high-K dielectric deep trench modulates the electric field and drift doping concentration, improves the breakdown voltage (<em>BV</em>) and reduces the specific on-resistance (<em>R</em><sub><em>on,sp</em></sub>). The gate trench with high-K dielectric forms the HKMG structure to modulate the channel current and alleviates the electric field concentration effect at the gate trench corner, reduces the highest gate oxide electric field intensity. The source trench together with the P-type shielding layer also relieves the electric field crowd to improve <em>BV</em> and reduce parasitic capacitance. Simulation results demonstrate that the TTHK-TMOS has a <em>BV</em> of 2501 V with a <em>R</em><sub><em>on,sp</em></sub> of only 1.17 mΩ cm<sup>2</sup>, achieving a <em>FOM</em> of 5354 MW/cm<sup>2</sup>. Compared to the conventional TMOS, TTHK-TMOS has increased its <em>FOM</em> by 226.7 %, lowered the <em>V</em><sub><em>TH</em></sub> by 52.6 %, and decreased the high frequency <em>FOM</em> by 23.1 % and 45.3 %, improving both static and dynamic performance.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208125"},"PeriodicalIF":2.7,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143519199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effect of selenium and carbon content on the electrochemical properties of molybdenum diselenide nanosheets for sensing applications

IF 2.7

Micro and Nanostructures Pub Date : 2025-02-24 DOI: 10.1016/j.micrna.2025.208117

Yasin Tangal , Matej Mičušík , Sadik Cogal

{"title":"Effect of selenium and carbon content on the electrochemical properties of molybdenum diselenide nanosheets for sensing applications","authors":"Yasin Tangal , Matej Mičušík , Sadik Cogal","doi":"10.1016/j.micrna.2025.208117","DOIUrl":"10.1016/j.micrna.2025.208117","url":null,"abstract":"<div><div>Two-dimensional (2D) nanomaterials have been extensively applied in sensing platforms due to their unique properties, including tunable electronic structures, high surface area, and excellent catalytic activity, enabling the selectice and sensitive detection of various biological compounds. However, 2D molybdenum diselenide (MoSe<sub>2</sub>) nanostructures have rarely studied in this field compared with its counterparts. In this work, we investigated the electrochemical sensing abilities of different MoSe<sub>2</sub> nanostructures obtained via a facile hydrothermal method. X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) were employed to determine the structures and morphologies of the as-prepared MoSe<sub>2</sub> samples. The analyses revealed that the MoSe<sub>2</sub> materials were obtained in 2D nanosheet structures. The MoSe<sub>2</sub> nanostructures were subsequently coated on glassy carbon electrodes to evaluate their electrochemical properties and performances. Voltammetric techniques were utilized to asses the electrocatalytic activities of different MoSe<sub>2</sub>-based electrodes towards three pivotal biological compounds, namely dopamine (DA), ascorbic acid (AA), and uric acid (UA). MoSe<sub>2</sub>@active carbon (AC) hybrids were also prepared to enhance the catalytic performance of the MoSe<sub>2</sub> toward the detection of the mentioned analytes. An electrochemical sensor based on the most effective MoSe<sub>2</sub>@AC hybrid gave wide linear detection ranges of 1.25–86 μM and 86–468 μM for DA, 50–5128 μM for AA, and 5–1025 μM for UA. The sensor also indicated low detection limits of 0.16 μM for DA, 8.22 μM for AA, and 0.45 μM for UA. Additionally, interference studies were conducted against common compounds present with DA, AA, and UA, demonstrating the high selectivity of the developed sensor.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208117"},"PeriodicalIF":2.7,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143519334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analysis of ballistic thermal resistance in FinFETs considering Joule heating effects

IF 2.7

Micro and Nanostructures Pub Date : 2025-02-21 DOI: 10.1016/j.micrna.2025.208113

Xixin Rao , Kongzhang Huang , YiPeng Wu , Haitao Zhang , Chengdi Xiao

{"title":"Analysis of ballistic thermal resistance in FinFETs considering Joule heating effects","authors":"Xixin Rao , Kongzhang Huang , YiPeng Wu , Haitao Zhang , Chengdi Xiao","doi":"10.1016/j.micrna.2025.208113","DOIUrl":"10.1016/j.micrna.2025.208113","url":null,"abstract":"<div><div>The continued miniaturization of integrated circuits has significantly increased power density in heterostructure transistors, creating localized hotspots that degrade device performance. Conventional Fourier's Law (FL) models are limited, particularly when device dimensions approach the phonon mean free path. To address this, we employ the Discrete Ordinates Method (DOM) to solve the non-gray Boltzmann Transport Equation (BTE), enabling precise thermal analysis in FinFETs. Our study underscores the need to incorporate ballistic phonon effects for accurate hotspot temperature predictions under self-heating conditions. Specifically, BTE based temperature estimates are up to 10 % higher than FL based predictions, underscoring the importance of capturing phonon ballistic transport. In heterostructure transistors, substrate-based heat dissipation remains the primary cooling route. Our research demonstrates that diamond substrates can reduce total thermal resistance by approximately 25 % compared to germanium, yet they exhibit higher interfacial thermal resistance relative to silicon carbide and germanium. This work elucidates how substrate thickness, heat-source size, and substrate material critically influence ballistic thermal resistance, thus offering valuable theoretical guidance for optimizing FinFETs design and enhancing thermal management.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208113"},"PeriodicalIF":2.7,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143474308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Inorganic graphenylene: An investigation of the influence of defects, temperature, and size on its mechanical properties

IF 2.7

Micro and Nanostructures Pub Date : 2025-02-19 DOI: 10.1016/j.micrna.2025.208104

Yan Zhu , Li-Cai Zhao

引用次数: 0