Micro and Nanostructures最新文献

{"title":"Artificial Neural Network based modelling for variational effect on double metal double gate negative capacitance FET","authors":"Yash Pathak ,&nbsp;Laxman Prasad Goswami ,&nbsp;Bansi Dhar Malhotra ,&nbsp;Rishu Chaujar","doi":"10.1016/j.micrna.2025.208225","DOIUrl":"10.1016/j.micrna.2025.208225","url":null,"abstract":"<div><div>In this work, we have implemented an accurate machine-learning approach for predicting various key analog and RF parameters of Negative Capacitance Field-Effect Transistors (NCFETs). Visual TCAD simulator and the Python high-level language were employed for the entire simulation process. However, the computational cost was found to be excessively high. The machine learning approach represents a novel method for predicting the effects of different sources on NCFETs while also reducing computational costs. The algorithm of an artificial neural network can effectively predict multi-input to single-output relationships and enhance existing techniques. The analog parameters of Double Metal Double Gate Negative Capacitance FETs (D2GNCFETs) are demonstrated across various temperatures (<span><math><mi>T</mi></math></span>), oxide thicknesses (<span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>o</mi><mi>x</mi></mrow></msub></math></span>), substrate thicknesses (<span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>s</mi><mi>u</mi><mi>b</mi></mrow></msub></math></span>), and ferroelectric thicknesses (<span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>F</mi><mi>e</mi></mrow></msub></math></span>). These findings can inform various applications in nanoelectronic devices and integrated circuit (IC) design.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208225"},"PeriodicalIF":2.7,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144242418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"HfO2/GaN interface traps reliability on nanoscaled truncated fin SOI-FinFET for high-frequency and low-distortion RF applications","authors":"Praween Kumar Srivastava,&nbsp;Atul Kumar,&nbsp;Ajay Kumar","doi":"10.1016/j.micrna.2025.208247","DOIUrl":"10.1016/j.micrna.2025.208247","url":null,"abstract":"<div><div>This work investigated the impact of HfO₂/GaN interface traps on truncated fin SOI-FinFET for high-frequency performance at short channel length, and all the results were simultaneously compared with those of conventional truncated FinFET. The effects of interface traps have been performed for FinFETs and evaluated in terms of analog characteristics, high-frequency response, linearity, and distortion-less behavior at RF frequencies. The analog performance is assessed through parameters such as drain current, transconductance values, switching ratio (<em>I</em>_ON/<em>I</em>_OFF), subthreshold swing, drain-induced barrier lowering (DIBL), and electron mobility. High-frequency performance is analyzed using metrics such as cutoff frequency (<em>f</em>_T), maximum operational frequency (<em>f</em>_MAX), gain-frequency product (GFP), transconductance frequency product (TFP), and gain-transconductance frequency product (GTFP). Linearity and distortion-free behavior are examined by analyzing second and third harmonics at RF frequencies, quantified using parameters such as g_m2, gm₃, VIP2, VIP3, HD2, HD3, and the 1 dB compression point. Additionally, third-order intermodulation harmonics are evaluated using IIP3 and IMD3. Compared to conventional truncated FinFETs, the GaN truncated fin structure offers improved electrostatic control; however, the adverse influence of interface traps necessitates optimized process strategies to mitigate their impact. This work provides valuable insights into the trade-offs associated with HfO₂/GaN interfaces in the design of high-performance, short-channel SOI-FinFETs for next-generation RF and mm-wave applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208247"},"PeriodicalIF":2.7,"publicationDate":"2025-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144242431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development and comparative analysis of a GAA nanosheet FET across diverse space charge region materials for nanoscale applications","authors":"Asisa Kumar Panigrahy ,&nbsp;Ritesh Rastogi ,&nbsp;Pulla Reddy Avula ,&nbsp;Sagar Kolekar ,&nbsp;Kapil Joshi ,&nbsp;Raghunandan Swain","doi":"10.1016/j.micrna.2025.208239","DOIUrl":"10.1016/j.micrna.2025.208239","url":null,"abstract":"<div><div>Gate-All-Around (GAA) FETs currently dominate the industry due to their primary benefit of reduced overall FET size and enhanced gate electrostatic integrity over the channel from all directions. This study presents a comparative analysis of 10 nm FinFET and nanosheet FET (NS-FET) architectures designed using GAA and fully depleted Silicon-On-Insulator (FD-SOI) technologies. The NS-FETs feature dual-channel structures with uniform doping profiles and various spacer region configurations, including single-K materials (Air, SiO₂) and dual-K combinations (HfO₂+SiO₂, Nitride + HfO₂). A comprehensive evaluation of key performance parameters, including transfer characteristics, threshold voltage, switching ratio, Drain-Induced Barrier Lowering (DIBL), and subthreshold swing (SS), was conducted. Results indicate that NS-FETs demonstrate significant reduction of SCEs compared to FinFETs, with DIBL reductions of 65.34 %, 59.37 %, 81.43 %, and 83.19 %, and SS improvements of 5.28 %, 0.92 %, 0.02 %, and 2.68 % for SiO₂, HfO₂+SiO₂, Nitride + HfO₂, and Air spacers, respectively. Notably, single-K spacers yielded higher <em>I</em>_<em>ON</em><em>/I</em>_<em>OFF</em> ratios. These findings confirm that strategic spacer material engineering in NS-FETs effectively minimizes leakage currents, thereby enhancing device performance for ultra-scaled, low-power applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208239"},"PeriodicalIF":2.7,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144230596","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Exploring 2D LaOBr and LaOI monolayers: Stability, electronic, phononic, thermal, and optical properties using DFT and AIMD approaches","authors":"Nzar Rauf Abdullah ,&nbsp;Shaho M. Rasul ,&nbsp;Yousif Hussein Azeez","doi":"10.1016/j.micrna.2025.208219","DOIUrl":"10.1016/j.micrna.2025.208219","url":null,"abstract":"<div><div>This work aims to investigate the stability, electronic, thermal, and optical properties of two-dimensional LaOBr and LaOI monolayers using density functional theory (DFT) and ab initio molecular dynamics (AIMD) simulations. The energetic, dynamic, and thermal stability of both monolayers are confirmed via the calculations of formation energy, phonon dispersion, and AIMD, respectively. LaOBr has a larger binding energy, suggesting stronger interlayer interactions and thus higher structural stability. The <span><math><mi>d</mi></math></span>-orbitals of La atoms are more localized in LaOBr. The La atoms thus do not overlap significantly with orbitals of neighboring atoms reducing the hybridization and broadening of the conduction band. A narrower conduction band typically corresponds to a higher energy gap between the valence and conduction bands, potentially increasing the band gap of LaOBr to 3.89 eV (GGA) and 6.27 eV (HSE06) compared to LaOI with band gap of 3.41 eV (GGA) and 5.27 eV (HSE06). Consequently, the optical conductivity of LaOBr is blue shifted to a higher photon energy with a lower static dielectric function and refractive index. LaOBr and LaOI monolayers exhibit distinct thermal conductivity due to varying group velocities, suggesting their complementary applications from low to high-frequency thermal management. The lattice thermal conductivity of LaOBr is much higher than that of LaOI due to it’s higher group velocity. We confirm that both monolayers could have powerful applications in thermoelectric and optoelectronic devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208219"},"PeriodicalIF":2.7,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144242430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dual-K spacer integration in Tree-FETs: A comparative study on leakage reduction and performance enhancement","authors":"Dharavath Parvathi,&nbsp;P. Prithvi","doi":"10.1016/j.micrna.2025.208237","DOIUrl":"10.1016/j.micrna.2025.208237","url":null,"abstract":"<div><div>In this article, the single and dual spacer dielectric performance in a three-channel Tree-FET design is compared in detail for the first time. Different channel lengths extending from 20 nm to 12 nm are systematically evaluated. As device dimensions continue to scale down, traditional spacer designs utilising high-<em>k</em> materials encounter challenges such as increased fringe capacitance and degraded control over leakage. This paper addresses these limitations by investigating a dual-<em>k</em> spacer strategy in Tree-FETs. The device architecture is meticulously optimised, exhibiting a nanosheet height and width of 5 nm and 23 nm, respectively, an inter-bridge height of 5 nm, an inter-bridge width of 8 nm and a channel length of 20 nm–12 nm. To optimise device performance, six dual-<em>k</em> spacer combinations have been meticulously chosen: HfO₂+Air, HfO₂+Si₃N₄, HfO₂+SiO₂, Al₂O₃+Air, Al₂O₃+ Si₃N₄, and Al₂O₃+ SiO₂. The findings unequivocally indicate that the HfO₂+Air dual-<em>k</em> spacer consistently provides superior electrostatic control and markedly boosted DC and analog/RF performance. At a channel length of 20 nm, the HfO₂+Air configuration attains a remarkably low drain-induced barrier lowering (DIBL) of 24.13 mV/V and an exceptionally steep subthreshold swing (SS) of 60.96 mV/dec, surpassing the single-<em>k</em> HfO₂ spacer, which demonstrates a DIBL of 29.02 mV/V and SS of 61.79 mV/dec. Moreover, the device with the HfO₂+Air combination exhibits exceptional analog/RF performance, marked by elevated transconductance (gm), diminished output conductance (gds), and a lower cutoff frequency(<em>f</em>_T). This renders the device exceptionally suitable for high-performance and low-frequency applications. As the channel length increases, the advantages of the dual-<em>k</em> spacer become more apparent, leading to a notable improvement in switching performance and a substantial reduction in leakage current. Furthermore, the HfO₂+Air arrangement routinely attains an <em>I</em>_ON/<em>I</em>_OFF 10⁸, markedly surpassing the <em>I</em>_ON/<em>I</em>_OFF ratio achieved by single-<em>k</em> design. This article highlights the viability of dual-<em>k</em> spacers for the future of semiconductor devices, providing an optimal balance between mitigating short-channel effects and optimising overall device efficiency.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208237"},"PeriodicalIF":2.7,"publicationDate":"2025-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144220895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design of GaN SBD with high cutoff frequency for THz mixer applications","authors":"Siyuan Zhang ,&nbsp;Xiaolin Hao ,&nbsp;Guodong Gu ,&nbsp;Hao Yu ,&nbsp;Xubo Song ,&nbsp;Yuanjie Lv ,&nbsp;Wei Huang ,&nbsp;D.W. Zhang ,&nbsp;Junyan Zhu ,&nbsp;Yanwen Zhang ,&nbsp;Xiaodong Yang ,&nbsp;Zhihong Feng","doi":"10.1016/j.micrna.2025.208234","DOIUrl":"10.1016/j.micrna.2025.208234","url":null,"abstract":"<div><div>This work firstly reports the high-frequency GaN planar Schottky barrier diodes (SBDs) for 220 GHz mixer applications, while conducting a systematic investigation into the design and optimization of device frequency performance through advanced device-level simulations. To enhance the cutoff frequency characteristics, device-level Sentaurus-TCAD simulation were employed to establish the quantitative relationship between critical structural parameters (N-GaN layer thickness and anode size) and key electrical parameters (series resistance <em>R</em>_s and zero-bias junction capacitance <em>C</em>_j0). Results reveal that the reduction of the N-GaN layer thickness combined with optimal anode size enables significant improvement in cutoff frequency, achieving theoretical values nearly 4 THz. Guided by these simulations, the device fabricated within current fabrication capabilities achieved a 31.55 Ω <em>R</em> and 2.1 fF <em>C</em>_j0 with a 50 nm N-GaN layer thickness and a 0.5 μm anode radius, producing a high cutoff frequency of 2.41 THz. Finally, the SBD fabricated based on simulation was embedded in a quartz based microstrip circuit for testing. The mixer exhibits good millimeter-wave performance with a conversion loss (CL) below 18 dB across 210–224 GHz and an input 1 dB compression point (<em>P</em>_in1dB) of 2 dBm at room temperature, confirming excellent linearity characteristics. This work establishes following advancements, including the development of a TCAD-based simulation framework for optimizing parasitic parameters and cutoff frequency in GaN SBDs, and the demonstration of high-frequency GaN SBDs’ potential in terahertz mixer systems, providing a novel methodology for advancing GaN technology in terahertz applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208234"},"PeriodicalIF":2.7,"publicationDate":"2025-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144242429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stacked split gate oxide DG P–I–N Hetero-Vertical TFET based gas sensor for sensing O2, H2 and NH3","authors":"Sourav Das,&nbsp;Kunal Singh","doi":"10.1016/j.micrna.2025.208233","DOIUrl":"10.1016/j.micrna.2025.208233","url":null,"abstract":"<div><div>In this reported work, we have proposed doping less channel based Splitting gate oxide double Gate-Hetero V-TFET gas sensor and analyzed its different figures of merit by using the TCAD simulation tool. The incorporation of doping-less channel intended to provide high on-state current and improve the switching performance. Splitting gate oxide (oxide layer is sandwiched between two high-κ layers) used in this structure reduces power consumption, lowers interface state density and improves the surface passivation for the proficient tunnelling. When gas material is present, gas molecules dissociate and are absorbed into the catalytic gate metal of the device through the diffusion process. Vertical device structure takes lower chip area as compared to lateral device; thus, more devices can be accommodated in same chip area. Here, gate metal surface gas molecule adsorption impact on surface potential, electric field, threshold voltage, and energy band structure were explored. Cobalt (WF = 4.7eV), Silver (WF = 5.0eV) and Palladium (WF = 5.1eV) were used as gate metals for the sensing of Ammonia, Oxygen, and hydrogen gases respectively. Proposed gas sensor with gate metals as Cobalt, Silver, and Palladium under the unexposed condition has a high I_ON/I_OFF current ratio (∼9.46 × 10¹², 2.64 × 10¹², and 1.13 × 10¹²). While same device on gas exposure to above mentioned gases at gas concentration corresponding to 200 meV work function change shows a low I_ON/I_OFF current ratio (∼5.14 × 10¹², 4.00 × 10¹¹, and 1.06 × 10¹¹) with a decent SS (21.16 mV/dec). Thus, proposed gas sensor is highly sensitive and shows a distinguishable change in device current under exposed and unexposed condition.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208233"},"PeriodicalIF":2.7,"publicationDate":"2025-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144220889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First principles study of structural, electronic, optical and thermodynamics properties of Rb2AgAsA6 (A = Br and I) compound for optoelectronic devices","authors":"Muhammad Khuram Shahzad ,&nbsp;Shoukat Hussain ,&nbsp;Abhinav Kumar ,&nbsp;M.M. Rekha ,&nbsp;Binayak Pattanayak ,&nbsp;Karthikeyan Jayabalan ,&nbsp;Vivek Kumar Pandey ,&nbsp;Ankit D. Oza ,&nbsp;Vineet Tirth ,&nbsp;Mohamed Hussien","doi":"10.1016/j.micrna.2025.208236","DOIUrl":"10.1016/j.micrna.2025.208236","url":null,"abstract":"<div><div>Perovskite substances are thought to be the starting point for a wide range of physical applications in the sectors of electronic and energy manufacturing applications. The first principle calculations (CASTEP) are used with GGA-PBE functional to analyze the physical characteristics of halide perovskite Rb₂AgAsA₆ (A = Br and I) substances. The substances have 40 atoms per unit cell in the cubic form and belong to the space group 221 (Pm3 m). According to results, the Rb₂AgAsA₆ compound's stability is confirmed via tolerance factor (0.84 and 0.86) and formation energy (−836.176 and −985.566), accordingly. The elastic parameters (C_ij) are used to influence the flexibility (v = 0.26 and 0.28, B/G = 1.77 and 1.96), the anisotropic features (A = 0.17 and 0.24), and the Born mechanical stability of Rb₂AgAsA₆ materials (A = Br and I). They also determined the light absorption and conductivity in the visible/UV range and its transparency to low-energy photons and refractive index in the energy limits from 0.0 to 30.0 eV. Our calculated results suggest that Rb₂AgAsA₆(A = Br and I) materials are well-suited for energy claims and show great potential for advanced devices, such as optoelectronic devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208236"},"PeriodicalIF":2.7,"publicationDate":"2025-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144195151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Bicircular laser field controlling spin-valley optical conductivity in buckled hexagonal lattice under strain","authors":"Phusit Nualpijit ,&nbsp;Bumned Soodchomshom","doi":"10.1016/j.micrna.2025.208235","DOIUrl":"10.1016/j.micrna.2025.208235","url":null,"abstract":"<div><div>A two-dimensional hexagonal lattice features an additional degree of freedom, analogous to spin, arising from the K and K′ valleys in the Brillouin zone. These valleys offer promising opportunities for logic operations in quantum information processing, operating on few-femtosecond timescales. In this work, we develop a model to investigate the electronic and optical properties governing topological phases induced by a bicircular laser field. Our findings reveal that spin polarization emerges when the laser field orientation aligns with the lattice symmetry, giving rise to a non-zero quantum anomalous Hall effect due to time-reversal symmetry breaking. This effect is driven by the bicircular laser. Additionally, we introduce uniaxial strain along the armchair direction to induce anisotropy in electron transport. Analytical evaluations demonstrate that the constraint condition relating the longitudinal conductivities, σ_xx(ω) and σ_yy (ω), becomes strain-dependent. However, the DC transverse conductivity remains insensitive to strain. The valley degree of freedom can be distinguished through the sign of the Faraday angle. Notably, the analytical expressions presented in this work also imply that the fine-structure constant may be extracted via transmittance and Faraday rotation measurements.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208235"},"PeriodicalIF":2.7,"publicationDate":"2025-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144203307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical prediction of carrier mobility in two-dimension GaN-SiS vdW heterostructure","authors":"Lijia Tong ,&nbsp;Tiantian Zhang ,&nbsp;Lei Yue ,&nbsp;Mengwei Yuan ,&nbsp;Xiaoya Liu ,&nbsp;Hongxiang Zong","doi":"10.1016/j.micrna.2025.208216","DOIUrl":"10.1016/j.micrna.2025.208216","url":null,"abstract":"<div><div>The advancement of nanoelectronics necessitates two-dimensional (2D) materials with balanced carrier mobility and suitable bandgaps. This study presents a comprehensive theoretical analysis of the intrinsic electron and hole mobilities in 2D GaN-SiS van der Waals (vdW) heterostructure. Results reveal that its electronic performance (along the <em>y</em>-axis) exceeds that of 2D GaN-ZnO, 2D GaN-MoS₂, and 2D GaN-WS₂. Conversely, its intrinsic hole mobility is significantly lower than those of these 2D GaN vdW heterostructures. These findings demonstrate that the heterostructure's electronic properties can be selectively tuned through structural engineering. The dramatic hole mobility inhibition, coupled with high electron mobility, positions 2D GaN-SiS as a promising electron-transporting material, particularly enabling the assembly of electron-transporting systems with a specific conduction direction (the <em>y</em>-axis in this case).</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208216"},"PeriodicalIF":2.7,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144263810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}