Micro and Nanostructures最新文献

{"title":"Quantum Rényi entropy of hydrogenic impurity states in the GaAsxP1-x semiconductor quantum dot","authors":"De-hua Wang ,&nbsp;Tian-tian Tang ,&nbsp;Zhong-kai An ,&nbsp;Bin-hua Chu ,&nbsp;Gang Zhao","doi":"10.1016/j.micrna.2025.208167","DOIUrl":"10.1016/j.micrna.2025.208167","url":null,"abstract":"<div><div>Study of quantum Rényi entropy of hydrogenic impurity states in quantum dots is a fascinating research area in semiconductor physics and information theory. In this work, we investigate the quantum Rényi entropy of hydrogenic impurity states in the GaAs_xP_1-x semiconductor quantum dot. By calculating the Rényi entropy in both the position and momentum space (<span><math><mrow><msubsup><mi>R</mi><mi>r</mi><mi>α</mi></msubsup></mrow></math></span> and <span><math><mrow><msubsup><mi>R</mi><mi>p</mi><mi>β</mi></msubsup></mrow></math></span>), we uncover some novel phenomenon. For a given quantum state, both <span><math><mrow><msubsup><mi>R</mi><mi>r</mi><mi>α</mi></msubsup></mrow></math></span> and <span><math><mrow><msubsup><mi>R</mi><mi>p</mi><mi>β</mi></msubsup></mrow></math></span> change monotonically with the quantum dot radius, however, the Rényi entropy sum (<span><math><mrow><msubsup><mi>R</mi><mi>t</mi><mrow><mo>(</mo><mrow><mi>α</mi><mo>,</mo><mi>β</mi></mrow><mo>)</mo></mrow></msubsup></mrow></math></span>) shows extreme points in its variation with the radius. This behavior is related to the localization-delocalization transitions of the hydrogenic impurity states. Additionally, for different order of <span><math><mrow><mi>α</mi></mrow></math></span> and <span><math><mrow><mi>β</mi></mrow></math></span>, the variations of <span><math><mrow><msubsup><mi>R</mi><mi>t</mi><mrow><mo>(</mo><mrow><mi>α</mi><mo>,</mo><mi>β</mi></mrow><mo>)</mo></mrow></msubsup></mrow></math></span> with the quantum dot radius follow a similar pattern for the same quantum state. Furthermore, the effect of the As-doping on the Rényi entropy of this system is also discussed. It is interesting to find though <span><math><mrow><msubsup><mi>R</mi><mi>r</mi><mi>α</mi></msubsup></mrow></math></span> and <span><math><mrow><msubsup><mi>R</mi><mi>p</mi><mi>β</mi></msubsup></mrow></math></span> changes with the As-doping content, their sum (<span><math><mrow><msubsup><mi>R</mi><mi>t</mi><mrow><mo>(</mo><mrow><mi>α</mi><mo>,</mo><mi>β</mi></mrow><mo>)</mo></mrow></msubsup></mrow></math></span>) exhibits the property of translation invariant, with only the positions of the extreme points shifting toward higher As-doping content. Since the Rényi entropy offers valuable insights into the complexity of quantum states, this allows us to explore the localization-delocalization characteristics of the hydrogenic impurity states by changing the content of the doping element in the semiconductor quantum dots. This study provides a rich framework for understanding the quantum properties of semiconductor material, and has potential applications for advancements in quantum computing and optoelectronic devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"204 ","pages":"Article 208167"},"PeriodicalIF":2.7,"publicationDate":"2025-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143834190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"DC and RF performance analysis of scaled AlInN/GaN HEMTs with single and double-gate structures","authors":"S.K. Hima Bindhu,&nbsp;Yogesh Kumar Verma,&nbsp;G. Raam Dheep","doi":"10.1016/j.micrna.2025.208173","DOIUrl":"10.1016/j.micrna.2025.208173","url":null,"abstract":"<div><div>This manuscript focuses on the behaviour of AlInN/GaN high electron mobility transistors (HEMTs) by scaling down the device geometry, explicitly concentrating on gate length and barrier thickness with different operating temperatures. Comprehensive analytical simulations were performed to analyze the DC and RF performance of proposed HEMTs by calculating parameters such as I_on/I_off ratio, intrinsic gain, DIBL, and cut-off frequency using Silvaco's Victory TCAD simulator. To improve RF performance a double-gate (DG) structure is analyzed and compared with single gate structure. These results reveal a trade-off between intrinsic gain and cut-off frequency with the DG design achieving an increase in cut-off frequency though a reduction in intrinsic gain. This analysis shows the importance of accurate optimization of device structure to achieve superior device RF performance.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208173"},"PeriodicalIF":2.7,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143855504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Anisotropic mechanical properties of S-graphene nanotubes: Influence of chirality, temperature, number of walls, and defects","authors":"Dongxu Zhang ,&nbsp;Jie Zhang","doi":"10.1016/j.micrna.2025.208172","DOIUrl":"10.1016/j.micrna.2025.208172","url":null,"abstract":"<div><div>In this study, the mechanical properties of a novel two-dimensional (2D) graphene allotrope, S-graphene nanotubes (S-GNTs), are investigated for the first time using non-equilibrium molecular dynamics (NEMD) simulations. Key mechanical properties, including the fracture process, stress distribution, elastic modulus, toughness, ultimate stress, and fracture strain, are systematically examined. The influence of critical parameters such as length, radius, temperature, number of walls, and vacancy defects on these properties is analyzed. S-GNTs exhibit brittle behavior and anisotropic properties, with armchair fractures near boundaries due to stress concentration and zigzag fractures around the middle, reflecting chirality-dependent failure mechanisms. Temperature is the most influential factor, causing the largest and most pervasive degradation in mechanical properties due to increased thermal vibrations weakening atomic bonds. Radius has a greater influence on the mechanical properties of S-GNTs than length.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208172"},"PeriodicalIF":2.7,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143855419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-scaled 55 nm InAlN/InGaN/GaN/AlGaN HEMT on β-Ga2O3 substrate: A TCAD-Based performance analysis for high-frequency power applications","authors":"A. Revathy ,&nbsp;R. Thangam ,&nbsp;D. Haripriya ,&nbsp;S. Maheswari ,&nbsp;P. Murugapandiyan","doi":"10.1016/j.micrna.2025.208169","DOIUrl":"10.1016/j.micrna.2025.208169","url":null,"abstract":"<div><div>We present a comprehensive TCAD simulation study of an ultra-scaled InAlN/InGaN/GaN/AlGaN High Electron Mobility Transistor (HEMT on β-Ga₂O₃ substrate. The novel device architecture, incorporating a 55 nm gate length, addresses key challenges in wide-bandgap semiconductor integration while achieving superior performance metrics. Our simulation results demonstrate exceptional DC characteristics, including a maximum drain current density of 5.5 A/mm and ON-resistance of 9.23 Ω mm. The device exhibits remarkable electrostatic control with an I_ON/I_OFF ratio exceeding 10¹³ and peak transconductance of 0.77 S/mm. Three-terminal breakdown voltage simulations confirm robust operation up to 55 V. Through optimized parasitic management and short-channel effect mitigation, the device achieves cutting-edge radio frequency performance with f_T/f_max of 274/285 GHz. These results establish the potential of InAlN-based HEMTs on β-Ga₂O₃ substrates for next-generation high-frequency power applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"204 ","pages":"Article 208169"},"PeriodicalIF":2.7,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143808397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advancements in high-performance electrical heaters: Enhancing electrothermal properties with ZnO and g-C3N4 enhanced graphite-based technologies","authors":"Sarbast Mamnd Hussein ,&nbsp;Hossein Khojasteh ,&nbsp;Samir Mustafa Hamad","doi":"10.1016/j.micrna.2025.208168","DOIUrl":"10.1016/j.micrna.2025.208168","url":null,"abstract":"<div><div>The evolution of electrical heaters is crucial for advancing applications in smart wearables, optoelectronics, and energy-efficient heating technologies. This study investigates the enhancement of electrothermal properties in electrical heaters by integrating Zinc Oxide (ZnO) and Graphitic Carbon Nitride (g-C₃N₄) into graphite-based heaters. Employing ZnO nanoparticles, nanosheets, and g-C₃N₄/ZnO nanocomposites, we developed graphite-based electric heaters noted for their high performance, rapid response, and energy efficiency. Various synthesis methods, including hydrothermal, precipitation, and solid-state techniques, were used to engineer ZnO nanostructures with precise control over size and morphology, which were then integrated into graphite pastes. The inclusion of ZnO nanosheets significantly enhanced heating performance, with one configuration reaching a maximum temperature of 641 °C in just 200 s under a 10 V supply. The integration of g-C₃N₄ improved thermal stability and conductivity, enabling superior performance characterized by rapid temperature elevation with minimal energy input. This research not only elucidates the mechanisms through which nanoscale modifications enhance heater properties but also opens avenues for the development of scalable, cost-efficient, and environmentally friendly heating solutions.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"204 ","pages":"Article 208168"},"PeriodicalIF":2.7,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143808398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Research progress in the field of oil droplet transport based on underwater superoleophobic surface","authors":"Jie Li,&nbsp;Yunjie Guo,&nbsp;Wentian Shi,&nbsp;Yuke Wang,&nbsp;Yanning Lu,&nbsp;Shuo Fu","doi":"10.1016/j.micrna.2025.208159","DOIUrl":"10.1016/j.micrna.2025.208159","url":null,"abstract":"<div><div>This review focuses on underwater superoleophobic surfaces used for oil droplets transportation. Firstly, an overview of the wetting theory of underwater superoleophobic surfaces is discussed. After that, the surface pattern properties of flat-chemically heterogeneous surfaces are presented from the perspective of microscopic roughness structures, and the specific applications of underwater superoleophobic surfaces based on hierarchical structural design is given. Attempting to reveal the hydrophobic effect of micromorphology (re-entrant curvature affect) on surface structure, to guide the modeling of underwater superhydrophobic surfaces. Then, the driving mechanism of oil droplet transport is also summarized, and the underwater superoleophobic surfaces with special wettability are introduced, focusing on achieving different functions of oil droplet transportation. Finally, a summary and outlook were made on the progress of underwater superoleophobic surfaces in the field of oil droplet transport.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"204 ","pages":"Article 208159"},"PeriodicalIF":2.7,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143833573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mechanical properties of Dodecanophene nanosheets: Influence of size, temperature, defects, and layer stacking using NEMD simulations","authors":"Qianbin Zhang ,&nbsp;Bowen Wei","doi":"10.1016/j.micrna.2025.208160","DOIUrl":"10.1016/j.micrna.2025.208160","url":null,"abstract":"<div><div>This study investigates the effects of size, temperature, vacancy defects, and number of layers on the mechanical properties—Young's modulus, ultimate stress, and toughness—of the novel Dodecanophene nanosheets based on stress-strain curves using non-equilibrium molecular dynamics (NEMD) simulations. The findings highlight the anisotropic mechanical behavior of the nanosheets. The Young's modulus remains nearly unchanged with nanosheet size, converging at 409 GPa and 592 GPa in the armchair and zigzag directions, respectively. As temperature increases, the Young's modulus decreases slightly and stabilizes at 386 GPa (armchair) and 584.5 GPa (zigzag) at higher temperatures. Toughness decreases more significantly in the zigzag direction, with a 69 % reduction by 700 K compared to 61 % in the armchair direction. Increasing the defect concentration from 0 % to 3 % results in a 53.5 % and 49.65 % decline in Young's modulus in the armchair and zigzag directions, respectively. Multi-layer stacking enhances mechanical properties, increasing Young's modulus by 20.74 % and 14.13 % and ultimate stress by 13.33 % and 10.84 % in the armchair and zigzag directions, respectively.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"204 ","pages":"Article 208160"},"PeriodicalIF":2.7,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143834254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Cu1+/2+ and C co-doping on the magnetic and optical properties of ZnS with point defects (VZn,Hi): A first-principles study","authors":"Yue Zhang ,&nbsp;Taotang Liu ,&nbsp;Youjin Zheng ,&nbsp;Cong Li ,&nbsp;Guodong Hao ,&nbsp;Fei Wang","doi":"10.1016/j.micrna.2025.208158","DOIUrl":"10.1016/j.micrna.2025.208158","url":null,"abstract":"<div><div>In this paper, the generalized gradient approximation method within the density functional theory was employed to conduct an in-depth investigation into the electronic structure, magnetic coupling mechanism, and optical properties of the ZnS system in the presence of coexisting Cu, C, and H dopants as well as Zn vacancies. The research findings reveal that such coexistence can modulate the band gap of the ZnS system over a wide range. Among them, the system with the coexistence of Cu²⁺, C, and Zn vacancies exhibits unique advantages. This type of system possesses a suitable band gap, and its magnetic ground state demonstrates a significant red shift phenomenon and strong absorption characteristics in the visible light region. Moreover, the relative ratio of the effective mass of holes to that of electrons in this system is at a relatively high level,and the separation of electrons and holes is relatively ideal. As the C doping concentration increases, C-<em>sp</em>^<em>3</em> forms a shallow acceptor level, which can enhance the hole concentration in the valence band and strengthen the p-type conductive property. Furthermore, the system as a whole demonstrates good stability. In terms of the magnetic coupling mechanism, Cu doping with different valence states will induce different magnetic coupling mechanisms in the matrix. The sp^<em>3</em> hybridization of C atoms and Zn vacancies will introduce bound magnetic polarons, thereby exerting an impact on the magnetism of the system. When interstitial H atoms exist in the system, H is easily attracted by S²⁻. Under such circumstances, the Cu²⁺ doped system has a large net magnetic moment, while the Cu¹⁺ doped system is non-magnetic.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"204 ","pages":"Article 208158"},"PeriodicalIF":2.7,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143738464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Terahertz wide-band band-stop plasmonic filter based on Dirac semimetal and stub resonators","authors":"Zhuang Li,&nbsp;Yan Pan,&nbsp;Fang Chen,&nbsp;Wenxing Yang","doi":"10.1016/j.micrna.2025.208156","DOIUrl":"10.1016/j.micrna.2025.208156","url":null,"abstract":"<div><div>As a special three-dimensional material, bulk Dirac semimetal (BDS) has flexibility and tunability, allowing the bandwidth characteristics of band stop filters to be changed by altering the Fermi level and relaxation time. In this paper, a wideband band-stop filter based on BDS-insulator-BDS waveguide using BDS is proposed for the first time. The wideband plasmonic band-stop filter was numerically and theoretically studied using the FDTD method. In order to improve the performance of the proposed filter by widening the stopband frequency, we increased the number of stub resonators. In addition, by changing the geometric parameters of the stub resonator and the distance between the stubs, the filtering range and center frequency can be modified and shifted to a larger frequency. Its maximum bandwidth increases from 0.3934 THz to 0.5289 THz when more stub resonators are introduced. Therefore, the proposed plasmonic filter dynamically adjusts the filtering frequency and bandwidth by adjusting the Fermi level of BDS, providing a flexible and effective solution.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"204 ","pages":"Article 208156"},"PeriodicalIF":2.7,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143726044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Laser irradiated gas sensors: A review","authors":"M. Hjiri ,&nbsp;R. Dhahri ,&nbsp;N. Benmansour ,&nbsp;G. Neri","doi":"10.1016/j.micrna.2025.208157","DOIUrl":"10.1016/j.micrna.2025.208157","url":null,"abstract":"<div><div>Further modernization of our life is linked with emission of more toxic gases and vapors. Hence, for high standards of today's life, development of more sensitive and selective gas sensors is vital in various sections. Irradiation with high energy beams such as laser is a promising way to boost sensing performance of resistive gas sensors. Laser irradiation not only is a cheap and available energy, but also highly effective for modification of electronic properties through generation of defects and increasing of surface roughness. Herein, we have thoughtfully discussed the effect of laser irradiation on the sensing performance of gas sensors. All in all, laser irradiation is a highly efficient strategy to boost overall quality of gas sensors. However, optimization of laser irradiation conditions is necessary to achieve the highest sensing performance.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"204 ","pages":"Article 208157"},"PeriodicalIF":2.7,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143735325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}