Artificial Neural Network based modelling for variational effect on double metal double gate negative capacitance FET

Abstract

In this work, we have implemented an accurate machine-learning approach for predicting various key analog and RF parameters of Negative Capacitance Field-Effect Transistors (NCFETs). Visual TCAD simulator and the Python high-level language were employed for the entire simulation process. However, the computational cost was found to be excessively high. The machine learning approach represents a novel method for predicting the effects of different sources on NCFETs while also reducing computational costs. The algorithm of an artificial neural network can effectively predict multi-input to single-output relationships and enhance existing techniques. The analog parameters of Double Metal Double Gate Negative Capacitance FETs (D2GNCFETs) are demonstrated across various temperatures ($T$), oxide thicknesses ($T_{ox}$), substrate thicknesses ($T_{sub}$), and ferroelectric thicknesses ($T_{Fe}$). These findings can inform various applications in nanoelectronic devices and integrated circuit (IC) design.