HfO2/GaN interface traps reliability on nanoscaled truncated fin SOI-FinFET for high-frequency and low-distortion RF applications

This work investigated the impact of HfO₂/GaN interface traps on truncated fin SOI-FinFET for high-frequency performance at short channel length, and all the results were simultaneously compared with those of conventional truncated FinFET. The effects of interface traps have been performed for FinFETs and evaluated in terms of analog characteristics, high-frequency response, linearity, and distortion-less behavior at RF frequencies. The analog performance is assessed through parameters such as drain current, transconductance values, switching ratio (I_ON/I_OFF), subthreshold swing, drain-induced barrier lowering (DIBL), and electron mobility. High-frequency performance is analyzed using metrics such as cutoff frequency (f_T), maximum operational frequency (f_MAX), gain-frequency product (GFP), transconductance frequency product (TFP), and gain-transconductance frequency product (GTFP). Linearity and distortion-free behavior are examined by analyzing second and third harmonics at RF frequencies, quantified using parameters such as g_m2, gm₃, VIP2, VIP3, HD2, HD3, and the 1 dB compression point. Additionally, third-order intermodulation harmonics are evaluated using IIP3 and IMD3. Compared to conventional truncated FinFETs, the GaN truncated fin structure offers improved electrostatic control; however, the adverse influence of interface traps necessitates optimized process strategies to mitigate their impact. This work provides valuable insights into the trade-offs associated with HfO₂/GaN interfaces in the design of high-performance, short-channel SOI-FinFETs for next-generation RF and mm-wave applications.