Micro and Nanostructures最新文献_第3页

Design of GaN SBD with high cutoff frequency for THz mixer applications 太赫兹混频器用高截止频率GaN SBD的设计

IF 2.7

Micro and Nanostructures Pub Date : 2025-06-02 DOI: 10.1016/j.micrna.2025.208234

Siyuan Zhang , Xiaolin Hao , Guodong Gu , Hao Yu , Xubo Song , Yuanjie Lv , Wei Huang , D.W. Zhang , Junyan Zhu , Yanwen Zhang , Xiaodong Yang , Zhihong Feng

{"title":"Design of GaN SBD with high cutoff frequency for THz mixer applications","authors":"Siyuan Zhang , Xiaolin Hao , Guodong Gu , Hao Yu , Xubo Song , Yuanjie Lv , Wei Huang , D.W. Zhang , Junyan Zhu , Yanwen Zhang , Xiaodong Yang , Zhihong Feng","doi":"10.1016/j.micrna.2025.208234","DOIUrl":"10.1016/j.micrna.2025.208234","url":null,"abstract":"<div><div>This work firstly reports the high-frequency GaN planar Schottky barrier diodes (SBDs) for 220 GHz mixer applications, while conducting a systematic investigation into the design and optimization of device frequency performance through advanced device-level simulations. To enhance the cutoff frequency characteristics, device-level Sentaurus-TCAD simulation were employed to establish the quantitative relationship between critical structural parameters (N-GaN layer thickness and anode size) and key electrical parameters (series resistance <em>R</em><sub>s</sub> and zero-bias junction capacitance <em>C</em><sub>j0</sub>). Results reveal that the reduction of the N-GaN layer thickness combined with optimal anode size enables significant improvement in cutoff frequency, achieving theoretical values nearly 4 THz. Guided by these simulations, the device fabricated within current fabrication capabilities achieved a 31.55 Ω <em>R</em> and 2.1 fF <em>C</em><sub>j0</sub> with a 50 nm N-GaN layer thickness and a 0.5 μm anode radius, producing a high cutoff frequency of 2.41 THz. Finally, the SBD fabricated based on simulation was embedded in a quartz based microstrip circuit for testing. The mixer exhibits good millimeter-wave performance with a conversion loss (CL) below 18 dB across 210–224 GHz and an input 1 dB compression point (<em>P</em><sub>in1dB</sub>) of 2 dBm at room temperature, confirming excellent linearity characteristics. This work establishes following advancements, including the development of a TCAD-based simulation framework for optimizing parasitic parameters and cutoff frequency in GaN SBDs, and the demonstration of high-frequency GaN SBDs’ potential in terahertz mixer systems, providing a novel methodology for advancing GaN technology in terahertz applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208234"},"PeriodicalIF":2.7,"publicationDate":"2025-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144242429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Stacked split gate oxide DG P–I–N Hetero-Vertical TFET based gas sensor for sensing O2, H2 and NH3 基于堆叠分栅氧化DG P-I-N异质垂直TFET的O2， H2和NH3气体传感器

IF 2.7

Micro and Nanostructures Pub Date : 2025-06-02 DOI: 10.1016/j.micrna.2025.208233

Sourav Das, Kunal Singh

{"title":"Stacked split gate oxide DG P–I–N Hetero-Vertical TFET based gas sensor for sensing O2, H2 and NH3","authors":"Sourav Das, Kunal Singh","doi":"10.1016/j.micrna.2025.208233","DOIUrl":"10.1016/j.micrna.2025.208233","url":null,"abstract":"<div><div>In this reported work, we have proposed doping less channel based Splitting gate oxide double Gate-Hetero V-TFET gas sensor and analyzed its different figures of merit by using the TCAD simulation tool. The incorporation of doping-less channel intended to provide high on-state current and improve the switching performance. Splitting gate oxide (oxide layer is sandwiched between two high-κ layers) used in this structure reduces power consumption, lowers interface state density and improves the surface passivation for the proficient tunnelling. When gas material is present, gas molecules dissociate and are absorbed into the catalytic gate metal of the device through the diffusion process. Vertical device structure takes lower chip area as compared to lateral device; thus, more devices can be accommodated in same chip area. Here, gate metal surface gas molecule adsorption impact on surface potential, electric field, threshold voltage, and energy band structure were explored. Cobalt (WF = 4.7eV), Silver (WF = 5.0eV) and Palladium (WF = 5.1eV) were used as gate metals for the sensing of Ammonia, Oxygen, and hydrogen gases respectively. Proposed gas sensor with gate metals as Cobalt, Silver, and Palladium under the unexposed condition has a high I<sub>ON</sub>/I<sub>OFF</sub> current ratio (∼9.46 × 10<sup>12</sup>, 2.64 × 10<sup>12</sup>, and 1.13 × 10<sup>12</sup>). While same device on gas exposure to above mentioned gases at gas concentration corresponding to 200 meV work function change shows a low I<sub>ON</sub>/I<sub>OFF</sub> current ratio (∼5.14 × 10<sup>12</sup>, 4.00 × 10<sup>11</sup>, and 1.06 × 10<sup>11</sup>) with a decent SS (21.16 mV/dec). Thus, proposed gas sensor is highly sensitive and shows a distinguishable change in device current under exposed and unexposed condition.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208233"},"PeriodicalIF":2.7,"publicationDate":"2025-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144220889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First principles study of structural, electronic, optical and thermodynamics properties of Rb2AgAsA6 (A = Br and I) compound for optoelectronic devices 光电子器件用Rb2AgAsA6 （A = Br and I）化合物结构、电子、光学和热力学性质的第一性原理研究

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-30 DOI: 10.1016/j.micrna.2025.208236

Muhammad Khuram Shahzad , Shoukat Hussain , Abhinav Kumar , M.M. Rekha , Binayak Pattanayak , Karthikeyan Jayabalan , Vivek Kumar Pandey , Ankit D. Oza , Vineet Tirth , Mohamed Hussien

{"title":"First principles study of structural, electronic, optical and thermodynamics properties of Rb2AgAsA6 (A = Br and I) compound for optoelectronic devices","authors":"Muhammad Khuram Shahzad , Shoukat Hussain , Abhinav Kumar , M.M. Rekha , Binayak Pattanayak , Karthikeyan Jayabalan , Vivek Kumar Pandey , Ankit D. Oza , Vineet Tirth , Mohamed Hussien","doi":"10.1016/j.micrna.2025.208236","DOIUrl":"10.1016/j.micrna.2025.208236","url":null,"abstract":"<div><div>Perovskite substances are thought to be the starting point for a wide range of physical applications in the sectors of electronic and energy manufacturing applications. The first principle calculations (CASTEP) are used with GGA-PBE functional to analyze the physical characteristics of halide perovskite Rb<sub>2</sub>AgAsA<sub>6</sub> (A = Br and I) substances. The substances have 40 atoms per unit cell in the cubic form and belong to the space group 221 (Pm3 m). According to results, the Rb<sub>2</sub>AgAsA<sub>6</sub> compound's stability is confirmed via tolerance factor (0.84 and 0.86) and formation energy (−836.176 and −985.566), accordingly. The elastic parameters (C<sub>ij</sub>) are used to influence the flexibility (v = 0.26 and 0.28, B/G = 1.77 and 1.96), the anisotropic features (A = 0.17 and 0.24), and the Born mechanical stability of Rb<sub>2</sub>AgAsA<sub>6</sub> materials (A = Br and I). They also determined the light absorption and conductivity in the visible/UV range and its transparency to low-energy photons and refractive index in the energy limits from 0.0 to 30.0 eV. Our calculated results suggest that Rb<sub>2</sub>AgAsA<sub>6</sub>(A = Br and I) materials are well-suited for energy claims and show great potential for advanced devices, such as optoelectronic devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208236"},"PeriodicalIF":2.7,"publicationDate":"2025-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144195151","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bicircular laser field controlling spin-valley optical conductivity in buckled hexagonal lattice under strain 应变下屈曲六方晶格自旋谷导电性的双圆激光场控制

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-30 DOI: 10.1016/j.micrna.2025.208235

Phusit Nualpijit , Bumned Soodchomshom

{"title":"Bicircular laser field controlling spin-valley optical conductivity in buckled hexagonal lattice under strain","authors":"Phusit Nualpijit , Bumned Soodchomshom","doi":"10.1016/j.micrna.2025.208235","DOIUrl":"10.1016/j.micrna.2025.208235","url":null,"abstract":"<div><div>A two-dimensional hexagonal lattice features an additional degree of freedom, analogous to spin, arising from the K and K′ valleys in the Brillouin zone. These valleys offer promising opportunities for logic operations in quantum information processing, operating on few-femtosecond timescales. In this work, we develop a model to investigate the electronic and optical properties governing topological phases induced by a bicircular laser field. Our findings reveal that spin polarization emerges when the laser field orientation aligns with the lattice symmetry, giving rise to a non-zero quantum anomalous Hall effect due to time-reversal symmetry breaking. This effect is driven by the bicircular laser. Additionally, we introduce uniaxial strain along the armchair direction to induce anisotropy in electron transport. Analytical evaluations demonstrate that the constraint condition relating the longitudinal conductivities, σ<sub>xx</sub>(ω) and σ<sub>yy</sub> (ω), becomes strain-dependent. However, the DC transverse conductivity remains insensitive to strain. The valley degree of freedom can be distinguished through the sign of the Faraday angle. Notably, the analytical expressions presented in this work also imply that the fine-structure constant may be extracted via transmittance and Faraday rotation measurements.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208235"},"PeriodicalIF":2.7,"publicationDate":"2025-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144203307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Theoretical prediction of carrier mobility in two-dimension GaN-SiS vdW heterostructure 二维gan - si vdW异质结构载流子迁移率的理论预测

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-28 DOI: 10.1016/j.micrna.2025.208216

Lijia Tong , Tiantian Zhang , Lei Yue , Mengwei Yuan , Xiaoya Liu , Hongxiang Zong

引用次数: 0

Design and analysis of PANI/MoS2 heterojunction-based transistors for improved analog performance 基于聚苯胺/二硫化钼异质结晶体管的设计与分析，以提高模拟性能

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-28 DOI: 10.1016/j.micrna.2025.208194

Shivangi Srivastava, Sajal Agarwal

{"title":"Design and analysis of PANI/MoS2 heterojunction-based transistors for improved analog performance","authors":"Shivangi Srivastava, Sajal Agarwal","doi":"10.1016/j.micrna.2025.208194","DOIUrl":"10.1016/j.micrna.2025.208194","url":null,"abstract":"<div><div>This study analyzes the performance of heterojunction of a PANI/MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> transistor through an evaluation of its various electrical characteristics. A comprehensive study is done to critically analyze the proposed device performance in terms of electrical and RF characteristics. Proposed device with channel length of <span><math><mrow><mn>3</mn><mo>.</mo><mn>5</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span> exhibited superior performance in terms of threshold voltage (<span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>t</mi><mi>h</mi></mrow></msub></math></span>) = −0.39 V, on/off ratio = <span><math><mrow><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>11</mn></mrow></msup></mrow></math></span>, oxide capacitance (<span><math><msub><mrow><mi>C</mi></mrow><mrow><mi>g</mi><mi>g</mi></mrow></msub></math></span>)<span><math><mrow><mo>=</mo><mn>40</mn><mspace></mspace><mi>μ</mi><msup><mrow><mi>F/m</mi></mrow><mrow><mn>2</mn></mrow></msup></mrow></math></span> and maximum drain current = <span><math><mrow><mn>27</mn><mspace></mspace><mi>μ</mi><mi>A</mi></mrow></math></span> at comparatively lower gate voltage, i.e. 0.9 V. Maximum drain current can be further increased by 1.7 mA for 32 nm device. With the achieved parameter values, the proposed transistor can be employed for various applications, such as memory storage and analog circuits. However, high on/off ratio and low <span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>t</mi><mi>h</mi></mrow></msub></math></span> also ensure its usefulness in different switching and low-power devices. Physical realization of the proposed device is also discussed in detail to provide validation of results.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208194"},"PeriodicalIF":2.7,"publicationDate":"2025-05-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144170279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design optimization of MEMS gyroscope for enhanced sensitivity, bandwidth and noise reduction MEMS陀螺仪的设计优化，以提高灵敏度，带宽和降噪

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-24 DOI: 10.1016/j.micrna.2025.208224

Shaveta , R.K. Bhan , Rishu Chaujar

{"title":"Design optimization of MEMS gyroscope for enhanced sensitivity, bandwidth and noise reduction","authors":"Shaveta , R.K. Bhan , Rishu Chaujar","doi":"10.1016/j.micrna.2025.208224","DOIUrl":"10.1016/j.micrna.2025.208224","url":null,"abstract":"<div><div>The paper presents and discusses a novel methodology for enhancing the amended Figure of merit (FOM) in a MEMS-based Gyroscope device using a thick sense mass. Generally, at the design stage, the focus is on optimising individual performance parameters like sensitivity, noise, or bandwidth based on specific applications. However, maximising an integrated figure of merit (FOM) is crucial for broader applicability and resource efficiency, enabling a single sensor to perform well across diverse applications. It is shown that one can obtain a better FOM by proper design optimization and using a simple single thick sense mass than existing reported approaches. The proposed design is demonstrated to achieve maximum device capability by simultaneously considering the maximization of sensitivity, bandwidth, and noise minimisation. The theoretical model and analysis of the proposed design were validated using Coventorware and Simulink software simulations, showing very close agreement with analytical results within 5 %. Compared to existing reports on devices under identical conditions, the optimized design exhibits a 52-fold increase in FOM at the fundamental level, measured in units of m Hz/dps<sup>2</sup>mm<sup>2</sup>. Deep Reactive Ion Etching (DRIE) has been proposed to be used to fabricate these devices through established processing steps, and experimental results validate and confirm the successful realization of structures for the sense mass. Additionally, we propose a new empirical relationship between sensitivity and bandwidth for improvement in device design. The effect of temperature on the thermomechanical noise is also considered. The proposed analysis provides valuable insights for MEMS gyroscope designers, aiming to enhance performance for applications such as navigation, intelligent machines and robotic systems.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208224"},"PeriodicalIF":2.7,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144178057","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optimizing world-record thin-film ACIGS solar cells with innovative 'hockey stick'-shaped GGI profile for tandem solar technology 优化世界纪录薄膜ACIGS太阳能电池与创新的“曲棍球棒”形状的GGI轮廓串联太阳能技术

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-23 DOI: 10.1016/j.micrna.2025.208220

Nour El I Boukortt , Antonio Garcia Loureiro

{"title":"Optimizing world-record thin-film ACIGS solar cells with innovative 'hockey stick'-shaped GGI profile for tandem solar technology","authors":"Nour El I Boukortt , Antonio Garcia Loureiro","doi":"10.1016/j.micrna.2025.208220","DOIUrl":"10.1016/j.micrna.2025.208220","url":null,"abstract":"<div><div>In this study, we perform a comprehensive optimization of key parameters influencing the performance of ACIGS (Ag-doped Cu(In,Ga)Se<sub>2</sub>) solar cells, focusing on the effects of deposition environment and techniques. Parameters such as absorber thickness, dopant concentration, electron affinity, bulk defect density, and interface trap density are analyzed using advanced TCAD simulations. A calibrated device model based on experimental data accounts for all relevant material properties and defect distributions. Our findings reveal that minimizing bulk and interface defects primarily induced by deposition conditions is critical to enhancing stability and performance. Under standard test conditions (AM1.5G, 25 °C), the reference and optimized ACIGS single-junction cells achieve power conversion efficiencies (PCEs) of 23.60 % and 25.80 %, respectively. Furthermore, under varying temperatures (20–90 °C) and illumination intensities (10–120 mW/cm<sup>2</sup>), the optimized cell demonstrates notable improvements: a 15 % enhancement in power temperature coefficient and a 22 % increase in voltage temperature coefficient. For tandem configurations, we pair the optimized ACIGS bottom cell featuring a double gallium grading profile with a perovskite top cell (bandgap ≈ 1.70 eV). This results in PCEs of 31.92 % and 32.39 % for tandem devices using ITO and band-to-band tunneling (B2BT) interconnections, respectively, under AM1.5G illumination. The results are benchmarked against recent studies, providing valuable insights into advanced strategies and the physical behavior of high-efficiency tandem perovskite/ACIGS solar cells.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208220"},"PeriodicalIF":2.7,"publicationDate":"2025-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144138397","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Silicon-coated plasmonic sensor with enhanced sensitivity for the detection of glucose solution 提高葡萄糖溶液检测灵敏度的硅包覆等离子体传感器

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-22 DOI: 10.1016/j.micrna.2025.208221

Yongpeng Ren, Desheng Qu, Yiping Sun, Fumeng Qin, Chunlei Li

引用次数: 0

Evaluation of second-order susceptibility in a symmetrical GaAs/InGaAs/GaAs quantum well under-indium segregation effect 铟偏析效应下对称GaAs/InGaAs/GaAs量子阱的二阶磁化率评价

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-22 DOI: 10.1016/j.micrna.2025.208222

Rim Menifi, Imen Saidi

{"title":"Evaluation of second-order susceptibility in a symmetrical GaAs/InGaAs/GaAs quantum well under-indium segregation effect","authors":"Rim Menifi, Imen Saidi","doi":"10.1016/j.micrna.2025.208222","DOIUrl":"10.1016/j.micrna.2025.208222","url":null,"abstract":"<div><div>The second-order susceptibility in a symmetrical two-level GaAs/InGaAs/GaAs quantum well under the indium segregation effect introduced by Muraki's model is theoretically analyzed in this study. The simulation procedure involves solving the coupled Schrödinger-Poisson equations to determine the electronic band structure, using the envelope wave function and the effective mass approximations. Then, the second harmonic generation (SHG) coefficient is calculated in a two-level model from the density matrix formalism. The study examines the influence of indium composition, hydrostatic pressure, external electric field and delta doping on electronic band parameters as well as on the second order susceptibility. The results obtained reveal that:<strong>(i)</strong> The resonant peaks' intensities of the second harmonic generation (SHG) increase along with indium composition as well as hydrostatic pressure, while their energy positions shift to higher and lower energies, respectively, with the increase of indium composition and that of the hydrostatic pressure. <strong>(ii)</strong> The simultaneous employment of an applied electric field and the delta doping in InGaAs' well is used to adjust the overlap of the electronic wave functions and the subbands' densities. This allows for a significant increase in real and virtual resonant intensities of the peaks reaching a value up to 5x10<sup>−5</sup> mV<sup>−1</sup> and shifting them towards higher energies. The results of this work open new perspectives for the exploitation of nonlinear and optical properties related to intersubband transitions in the structure of the quantum well based on GaAs/InGaAs highlighting their considerable potential for the development of advanced optoelectronic devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208222"},"PeriodicalIF":2.7,"publicationDate":"2025-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144134363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0