Micro and Nanostructures最新文献

{"title":"A 4H–SiC TMOS with triple trenches and high-K dielectric","authors":"Jiafei Yao ,&nbsp;Ziwei Hu ,&nbsp;Yeqin Zhu ,&nbsp;Yuao Liu ,&nbsp;Man Li ,&nbsp;Kemeng Yang ,&nbsp;Jing Chen ,&nbsp;Maolin Zhang ,&nbsp;Jun Zhang ,&nbsp;Yufeng Guo","doi":"10.1016/j.micrna.2025.208125","DOIUrl":"10.1016/j.micrna.2025.208125","url":null,"abstract":"<div><div>A novel 4H–SiC TMOS with triple trenches and high-K dielectric (TTHK-TMOS) is investigated. The main structural features include the triple trenches which are composed of a deep trench filled with high-K dielectric, a gate trench in the high-K dielectric deep trench and a source trench with P-type shielding layer. The high-K dielectric deep trench modulates the electric field and drift doping concentration, improves the breakdown voltage (<em>BV</em>) and reduces the specific on-resistance (<em>R</em>_{<em>on,sp</em>}). The gate trench with high-K dielectric forms the HKMG structure to modulate the channel current and alleviates the electric field concentration effect at the gate trench corner, reduces the highest gate oxide electric field intensity. The source trench together with the P-type shielding layer also relieves the electric field crowd to improve <em>BV</em> and reduce parasitic capacitance. Simulation results demonstrate that the TTHK-TMOS has a <em>BV</em> of 2501 V with a <em>R</em>_{<em>on,sp</em>} of only 1.17 mΩ cm², achieving a <em>FOM</em> of 5354 MW/cm². Compared to the conventional TMOS, TTHK-TMOS has increased its <em>FOM</em> by 226.7 %, lowered the <em>V</em>_<em>TH</em> by 52.6 %, and decreased the high frequency <em>FOM</em> by 23.1 % and 45.3 %, improving both static and dynamic performance.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208125"},"PeriodicalIF":2.7,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143519199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of selenium and carbon content on the electrochemical properties of molybdenum diselenide nanosheets for sensing applications","authors":"Yasin Tangal ,&nbsp;Matej Mičušík ,&nbsp;Sadik Cogal","doi":"10.1016/j.micrna.2025.208117","DOIUrl":"10.1016/j.micrna.2025.208117","url":null,"abstract":"<div><div>Two-dimensional (2D) nanomaterials have been extensively applied in sensing platforms due to their unique properties, including tunable electronic structures, high surface area, and excellent catalytic activity, enabling the selectice and sensitive detection of various biological compounds. However, 2D molybdenum diselenide (MoSe₂) nanostructures have rarely studied in this field compared with its counterparts. In this work, we investigated the electrochemical sensing abilities of different MoSe₂ nanostructures obtained via a facile hydrothermal method. X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) were employed to determine the structures and morphologies of the as-prepared MoSe₂ samples. The analyses revealed that the MoSe₂ materials were obtained in 2D nanosheet structures. The MoSe₂ nanostructures were subsequently coated on glassy carbon electrodes to evaluate their electrochemical properties and performances. Voltammetric techniques were utilized to asses the electrocatalytic activities of different MoSe₂-based electrodes towards three pivotal biological compounds, namely dopamine (DA), ascorbic acid (AA), and uric acid (UA). MoSe₂@active carbon (AC) hybrids were also prepared to enhance the catalytic performance of the MoSe₂ toward the detection of the mentioned analytes. An electrochemical sensor based on the most effective MoSe₂@AC hybrid gave wide linear detection ranges of 1.25–86 μM and 86–468 μM for DA, 50–5128 μM for AA, and 5–1025 μM for UA. The sensor also indicated low detection limits of 0.16 μM for DA, 8.22 μM for AA, and 0.45 μM for UA. Additionally, interference studies were conducted against common compounds present with DA, AA, and UA, demonstrating the high selectivity of the developed sensor.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208117"},"PeriodicalIF":2.7,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143519334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis of ballistic thermal resistance in FinFETs considering Joule heating effects","authors":"Xixin Rao ,&nbsp;Kongzhang Huang ,&nbsp;YiPeng Wu ,&nbsp;Haitao Zhang ,&nbsp;Chengdi Xiao","doi":"10.1016/j.micrna.2025.208113","DOIUrl":"10.1016/j.micrna.2025.208113","url":null,"abstract":"<div><div>The continued miniaturization of integrated circuits has significantly increased power density in heterostructure transistors, creating localized hotspots that degrade device performance. Conventional Fourier's Law (FL) models are limited, particularly when device dimensions approach the phonon mean free path. To address this, we employ the Discrete Ordinates Method (DOM) to solve the non-gray Boltzmann Transport Equation (BTE), enabling precise thermal analysis in FinFETs. Our study underscores the need to incorporate ballistic phonon effects for accurate hotspot temperature predictions under self-heating conditions. Specifically, BTE based temperature estimates are up to 10 % higher than FL based predictions, underscoring the importance of capturing phonon ballistic transport. In heterostructure transistors, substrate-based heat dissipation remains the primary cooling route. Our research demonstrates that diamond substrates can reduce total thermal resistance by approximately 25 % compared to germanium, yet they exhibit higher interfacial thermal resistance relative to silicon carbide and germanium. This work elucidates how substrate thickness, heat-source size, and substrate material critically influence ballistic thermal resistance, thus offering valuable theoretical guidance for optimizing FinFETs design and enhancing thermal management.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208113"},"PeriodicalIF":2.7,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143474308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Inorganic graphenylene: An investigation of the influence of defects, temperature, and size on its mechanical properties","authors":"Yan Zhu ,&nbsp;Li-Cai Zhao","doi":"10.1016/j.micrna.2025.208104","DOIUrl":"10.1016/j.micrna.2025.208104","url":null,"abstract":"<div><div>This study investigates the mechanical properties of armchair and zigzag Inorganic Graphenylene (IGP) nanosheets through molecular dynamics (MD) simulations. We explore the influence of dimensionality, maintaining a constant ratio between the armchair and zigzag lengths of the nanosheet, as well as the effects of increasing the length of the nanosheet in the loading direction. Notably, armchair-oriented IGP nanosheets demonstrate a higher Young's modulus compared to their zigzag counterparts. Stress distribution analyses reveal that both configurations exhibit gradual and soft failure mechanisms under tensile loading. Additionally, the study examines the impact of temperature and vacancy defects on the mechanical properties, finding that elevated temperatures and the presence of defects lead to a reduction in Young's modulus for both orientations, with fractures occurring at shorter strain values.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208104"},"PeriodicalIF":2.7,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143478738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"DFT based study to sense harmful gases (NH3, AsH3, BF3, BCl3) using Scandium Nitride monolayer for sensing device applications","authors":"Pratham Gowtham ,&nbsp;Mandar Jatkar","doi":"10.1016/j.micrna.2025.208100","DOIUrl":"10.1016/j.micrna.2025.208100","url":null,"abstract":"<div><div>In this study, we investigate the structural stability and electronic properties of zigzag Scandium Nitride Nanoribbon (ZScNNR) configurations, with a particular emphasis on their application in detecting toxic gases such as NH₃, AsH₃, BF₃, and BCl₃. Our comprehensive analysis reveals that all studied ZScNNR gas configurations exhibit semiconductor-like behavior except BCl₃, as evidenced by their calculated band structures and density of states (DOS). Among these configurations, the Bare-ZScNNR-6 configuration emerges as the most thermodynamically stable. Furthermore, the configurations involving AsH₃ at width 2 are energetically favorable (-2.57eV). Importantly, the study highlights the remarkable selectivity of AsH₃ on BF₃ i.e 2.5. It shows their potential as effective nanosensors. In particular, the BCl₃ and NH₃ ZScNNR-6 configurations demonstrate an impressive response time of just 7.7 microseconds, establishing them as highly efficient sensor options. These findings underscore the significant potential of ZScNNR-based nanosensors for rapid and selective toxic gas detection, paving the way for their integration into advanced nanoscale sensing devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208100"},"PeriodicalIF":2.7,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143445926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evaluation of random process fluctuation and geometry dependence in nanosheet reconfigurable transistor","authors":"Chao Wang ,&nbsp;Jianing Zhang ,&nbsp;Ziyu Liu ,&nbsp;Xiaojin Li ,&nbsp;Yanling Shi ,&nbsp;Shaoqiang Chen ,&nbsp;Fei Lu ,&nbsp;Xinyu Dong ,&nbsp;Yang Shen ,&nbsp;Yabin Sun","doi":"10.1016/j.micrna.2025.208097","DOIUrl":"10.1016/j.micrna.2025.208097","url":null,"abstract":"<div><div>This study presents the first comprehensive evaluation of the impact of random process fluctuations on the electrical characteristics of nanosheet Reconfigurable FETs (NS-RFETs), and the geometry dependence including nanosheet width (<span><math><msub><mrow><mi>W</mi></mrow><mrow><mi>N</mi><mi>S</mi></mrow></msub></math></span>) and thickness (<span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>N</mi><mi>S</mi></mrow></msub></math></span>) are also investigated. Utilizing MATLAB and 3-D TCAD simulations, this research addresses three key fluctuation sources such as work function variation (WFV), gate edge roughness (GER) and line edge roughness (LER) including line width roughness (LWR) and line height roughness (LHR). It reveals that the variation of <span><math><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub></math></span> is the most influenced among all Figures of Merit (FoMs) and is predominantly affected by LWR and WFV at the control gate, due to the unique Schottky barrier tunneling mechanism in RFETs. WFV is the decisive factor for the variation of <span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>T</mi><mi>H</mi></mrow></msub></math></span> and SS. Generally, smaller geometry parameter leads to deterioration in the variation of <span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>T</mi><mi>H</mi></mrow></msub></math></span> and <span><math><mrow><mi>S</mi><mi>S</mi></mrow></math></span>, and <span><math><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub></math></span> is influenced more significantly. During the shrinkage of <span><math><msub><mrow><mi>W</mi></mrow><mrow><mi>N</mi><mi>S</mi></mrow></msub></math></span>, the impact of LWR becomes more dominant on <span><math><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub></math></span> and when <span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>N</mi><mi>S</mi></mrow></msub></math></span> decreases, WFV becomes more dominant. And LWR and WFV still deserves special attention as the geometry scales down. The results also indicate that enhancing the uniformity of metal grain of metal gate and reducing the RMS of LWR and LHR can mitigate electric performance fluctuations.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208097"},"PeriodicalIF":2.7,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143454928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of bifunctional counter electrode materials for quantum dot sensitized solar cells by using rGO/1T-MoS2 nano composite","authors":"Bayisa Batu Kasaye,&nbsp;Megersa Wodajo Shura,&nbsp;Solomon Tiruneh Dibaba","doi":"10.1016/j.micrna.2025.208099","DOIUrl":"10.1016/j.micrna.2025.208099","url":null,"abstract":"<div><div>The metallic molybdenum disulfide (1T-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>) has recently been recognized as a promising counter electrode (CE) material for quantum dot-sensitized solar cells (QDSSCs). However, its poor structural stability has limited its broader application. Herein to address this challenge, diatomic selenium (Se) and nickel (Ni) were doped into MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> to facilitate the phase conversion of 2H-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> to 1T-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>. This doped material was then integrated with reduced graphene oxide (rGO) via a hydrothermal method to develop a bifunctional Ni-Se-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>/rGO CE material for QDSSCs. The nanocomposite was characterized using XRD, SEM, FTIR, UV–vis spectroscopy, and electrochemical techniques, confirming the successful formation of the rGO/1T-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> nanostructure. SEM images revealed Ni-Se-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> loosely packed onto rGO sheets, and the XRD pattern confirmed the presence of the 1T-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>/rGO composite. Electrochemical impedance spectroscopy and cyclic voltammetry demonstrated excellent electrochemical properties, including a low charge transfer resistance (8.52 <span><math><mi>Ω</mi></math></span>) and a high electrochemical surface area. Tauc plot analysis showed a reduced bandgap of 1.8 eV for Ni-Se-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>/rGO compared to 2.0 eV for Ni-Se-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>. These improvements significantly enhance electron lifetime, charge transfer, and charge separation, resulting in superior overall performance of QDSSCs. This study highlights Ni-Se-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>/rGO as a highly efficient and stable photovoltaic CE material for QDSSCs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208099"},"PeriodicalIF":2.7,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143437436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"ZnO/MgO Schottky ultraviolet photodetector with high on/off ratio","authors":"Jiaojiao Liu ,&nbsp;Qiuliang Zhong ,&nbsp;Cheng Wu ,&nbsp;Zhenbo Chen ,&nbsp;Xiaoming Yu ,&nbsp;Xuan Yu ,&nbsp;Hai Zhang ,&nbsp;Yu Cao ,&nbsp;Zhenhua Li ,&nbsp;Qian Qiao ,&nbsp;Yingtang Zhou","doi":"10.1016/j.micrna.2025.208105","DOIUrl":"10.1016/j.micrna.2025.208105","url":null,"abstract":"<div><div>Low-cost, high-performance zinc oxide (ZnO) Schottky ultraviolet (UV) photodetectors (PDs) have garnered significant interest. However, due to the existence of defect states in solution-processed ZnO, the reduced carrier mobility limits the device's performance and further application. In this study, Schottky UV PDs were successfully prepared based on the ZnO/MgO composite films. The ZnO/MgO composite film's surface has a “gully” appearance when compared to the original ZnO thin films. The accumulation of uniform-sized grains creates irregular strip bumps, which increases the film's surface area and, consequently, its overall quality. The composite film exhibits excellent UV light absorption from 330 to 360 nm, and the reduced internal resistance results in fewer defects facilitating carrier migration. These superior characteristics significantly improve the device's photoelectric performance. It is worth noting that the device on/off ratio increases by 39 times (from 2.77 to 111.46), the noise equivalent power (NEP) and the normalized detectivity (D∗) decrease and increase by one order of magnitude, respectively, as the applied voltage increases from 1 to 2 V. Furthermore, the responsivity is improved by 3 times (from 0.46 to 1.88 mA W⁻¹), and response time is reduced by 42 %. This work provides a new idea for developing high-performance ZnO Schottky UV photodetectors.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208105"},"PeriodicalIF":2.7,"publicationDate":"2025-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143437504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of multi-quantum well growth pressure on GaN-based blue laser diodes","authors":"Zhenyu Chen ,&nbsp;Feng Liang ,&nbsp;Degang Zhao ,&nbsp;Zongshun Liu ,&nbsp;Jing Yang ,&nbsp;Ping Chen","doi":"10.1016/j.micrna.2025.208103","DOIUrl":"10.1016/j.micrna.2025.208103","url":null,"abstract":"<div><div>This study investigates the influence mechanism of growth pressure during Multiple Quantum Well (MQW) Metalorganic Chemical Vapor Deposition (MOCVD) growth in GaN-based blue laser diodes (LDs). Elevated growth pressure demonstrates an enhancement in LD output performance, seen in both slope efficiency and threshold current, accompanying kinks in P–I curves. To explain these differences in LD performance, we further explore the impact of growth pressure on MQW qualities. Two important influence mechanisms are discussed in detail. concerning indium incorporation during InGaN growth, adatom mobilities are effectively controlled by growth pressure directly during MOCVD growth. We found that higher growth pressure, contributing to rather lower adatom mobilities, facilitates indium incorporation into InGaN MQWs effectively. But excessively high pressure induces severe indium segregation, leading to poor luminescence homogeneity, thus responsible for the observed kinks in P–I curves. Secondly, in regard to crystalline quality of MQWs, impact of interfaces and defects is explored. Lower growth pressure may deteriorate interface quality and trigger more carbon impurity contamination, which are responsible for lower output efficiency that the LDs grown under lower growth pressure exhibit. As a result, we improved the slope efficiency of LD by 30∼40 % successfully by controlling growth pressure during MQW epitaxy.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208103"},"PeriodicalIF":2.7,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143474307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel p-GaN HEMT with superjunction silicon substrate for improved current collapse","authors":"Bo-Ming Feng,&nbsp;Ying Wang,&nbsp;Cheng-hao Yu,&nbsp;Hao-min Guo","doi":"10.1016/j.micrna.2025.208102","DOIUrl":"10.1016/j.micrna.2025.208102","url":null,"abstract":"<div><div>AlGaN/GaN HEMTs suffer from severe current collapse problems due to the large number of bulk traps within their semi-insulating buffer layer. In this work, a novel p-GaN AlGaN/GaN HEMT with a superjunction silicon substrate is proposed to reduce the buffer-induced current collapse of the device. The buffer-related trapping process of the proposed HEMT was investigated by applying negative V_Sub stress since the surface trapping effect is almost negligible in this case. Under negative V_Sub stress, the superjunction substrate acts like a protective layer for the buffer layer compared to the conventional silicon substrate: it reduces the number of electrons captured within the buffer layer during V_Sub stress by reducing the electric field strength inside the buffer layer and reducing the supply of electrons within the buffer layer. After the V_Sub stress is removed, the reduction in the number of captured electrons in the buffer layer leads to a reduction in the residual negative buffer potential, which in turn leads to a weakening of the depletion effect of the residual buffer potential on the 2DEG. Comparing the simulation results of the proposed HEMT with those of the conventional HEMT, it is demonstrated that the buffer-induced degradation of saturation drain current of the proposed HEMT is effectively suppressed.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208102"},"PeriodicalIF":2.7,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143445925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}