Micro and Nanostructures最新文献_第3页

Molecular dynamics simulation of competitive crystal growth of in SiC with different nuclei: Temperature-dependent crystallization and defect formation 不同核SiC竞争性晶体生长的分子动力学模拟：温度依赖结晶和缺陷形成

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-14 DOI: 10.1016/j.micrna.2025.208209

Tinghong Gao , Qinlan Pan , Kaiwen Li , Guiyang Liu , Wanjun Yan

{"title":"Molecular dynamics simulation of competitive crystal growth of in SiC with different nuclei: Temperature-dependent crystallization and defect formation","authors":"Tinghong Gao , Qinlan Pan , Kaiwen Li , Guiyang Liu , Wanjun Yan","doi":"10.1016/j.micrna.2025.208209","DOIUrl":"10.1016/j.micrna.2025.208209","url":null,"abstract":"<div><div>Silicon carbide (SiC), a third-generation semiconductor distinguished by its wide bandgap, superior thermal conductivity, and exceptional electron saturation velocity, has become indispensable for aerospace and defense systems requiring extreme operational reliability. Optimizing SiC's crystalline perfection is critical for high-power devices, necessitating atomic-scale insights into its growth thermodynamics. This study conducted large-scale molecular dynamics simulations to elucidate polytype-specific crystallization mechanisms in pure SiC melts across 2800–3250 K. Radial distribution function analysis, time-resolved crystallization kinetics, and defect visualization revealed temperature-dependent growth regimes: low-temperature conditions exhibited nucleation suppression, while high-temperature regimes promoted competitive growth between cubic (3C–SiC) and hexagonal (4H–SiC) polytypes, highlighting the importance of temperature control in optimizing crystal quality. This study enhances our understanding of the crystallization process of SiC and provides theoretical insights for the production of high-performance power semiconductors.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208209"},"PeriodicalIF":2.7,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144072265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploration of second and third-harmonic generation in quantum ring/envelopping oxides subjected to a lateral electric field: Case of GaAs/ AlxGa1-xAs 横向电场作用下量子环/包络氧化物中二次和三次谐波产生的探索：以GaAs/ AlxGa1-xAs为例

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-14 DOI: 10.1016/j.micrna.2025.208210

K. Hasanirokh , A. Naifar

{"title":"Exploration of second and third-harmonic generation in quantum ring/envelopping oxides subjected to a lateral electric field: Case of GaAs/ AlxGa1-xAs","authors":"K. Hasanirokh , A. Naifar","doi":"10.1016/j.micrna.2025.208210","DOIUrl":"10.1016/j.micrna.2025.208210","url":null,"abstract":"<div><div>For the first time, this research unlocks the mysterious behavior of localized electrons within a quantum ring (QR) exposed to a lateral x-axis electric flux in the presence of distinct enveloping oxidative environments. The parity symmetry with respect to the x-axis remains conserved, allowing us to classify the electron states based on their parity eigenvalues. Based on our conducted quantitative analysis, we have identified all the decisive metrics (radius ratio, width, relaxation time, electric strength, inner radius and host permittivity) that influence the amplitude of the wavefunction as well as its spatial extent. Second and third harmonic generation coefficients have also been scrutinized and the major outcomes revealed a strong sensitivity to the presence of neighboring oxides. The product of matrix elements exhibits a non-monotonic dependence on QR width, peaking at an intermediate value. With an increasing electrostatic flux ratios, all the resonant frequencies sweep across longer wavelengths with an amplitude improvement for small geometric ratios. The combination of all these factors is expected to open a new avenue for industrial research where QRs are predominantly selected as candidates.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208210"},"PeriodicalIF":2.7,"publicationDate":"2025-05-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144148114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

AWO4 (A= Zn, Ni) metal tungstates gas sensors: A review AWO4 （A= Zn, Ni）钨酸盐金属气体传感器研究进展

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-13 DOI: 10.1016/j.micrna.2025.208206

M. Hjiri , I. Najeh , N.H. Alonizan , G. Neri

引用次数: 0

Addressing interface trap charge sensitivity in tunnel FETs via dual metal gate engineering 利用双金属栅极技术解决隧道场效应管的界面陷阱电荷灵敏度问题

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-12 DOI: 10.1016/j.micrna.2025.208176

Kalpana Koppolu , Samuyelu B. , C.B. Rao K.

引用次数: 0

Computational modeling of SnO2 quantum dots gas sensors for CO detection

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-09 DOI: 10.1016/j.micrna.2025.208204

Shweta, Sunil Jadav

{"title":"Computational modeling of SnO2 quantum dots gas sensors for CO detection","authors":"Shweta, Sunil Jadav","doi":"10.1016/j.micrna.2025.208204","DOIUrl":"10.1016/j.micrna.2025.208204","url":null,"abstract":"<div><div>Tin oxide (SnO<sub>2</sub>) is the most commonly utilized gas sensing material due to its unique physical and chemical properties. SnO<sub>2</sub> quantum dots are chosen over bulk tin oxide (SnO<sub>2</sub>) due to their nanoscale size and high surface-to-volume ratio. Furthermore, the quantum confinement effect results in a larger bandgap and tunable electrical characteristics. This research presents a modified mathematical model to describe the gas sensing mechanism for reducing gases, such as carbon monoxide (CO) using SnO<sub>2</sub> quantum dots as sensing material. This research considers significant factors that impact sensing performance, such as potential, effective carrier concentration, and trapped charge density. It compares SnO<sub>2</sub> quantum dots at room temperature and bulk SnO<sub>2</sub> at 600 K, providing information on how these variables impact sensor behavior. The resistance of quantum dot films in air and in the presence of target gases is analyzed using binomial expansion to estimate the gas sensor response for both first-order and higher-order terms. The model is further extended to investigate the influence of gas concentration on the sensing film resistance and sensor response. The validity of the modified model is confirmed through comparison with the experimental data available in the literature, demonstrating a close agreement and consistent trends. Statistics affirm the model's reliability through analysis of the T-distribution that results in ±27.8087 margin of error. Cross-sensitivity investigation shows that CO gas has better selectivity than other interfering gases. Key factors such as grain size, depletion layer width, temperature, and doping concentration are examined for their impact on sensor performance. Additionally, this research highlights the gas sensor's response and recovery time, which are critical design parameters for efficient gas sensing devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208204"},"PeriodicalIF":2.7,"publicationDate":"2025-05-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Limited Cu-doping effect on morphological, structural, optical and electrochemical properties of nickel oxide nano-composite thin films 微量cu掺杂对氧化镍纳米复合薄膜形貌、结构、光学和电化学性能的影响

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-09 DOI: 10.1016/j.micrna.2025.208205

Tithi Sen , Amrita Biswas , Rajalingam Thangavel , Udayabhanu Gopalakrishnan Nair , Tapan Kumar Rout

引用次数: 0

Intersubband absorption at 1.55μm in symmetrical AlInN/GaN/AlInN/GaN/AlInN quantum well structures

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-07 DOI: 10.1016/j.micrna.2025.208195

Imen Saidi

{"title":"Intersubband absorption at 1.55μm in symmetrical AlInN/GaN/AlInN/GaN/AlInN quantum well structures","authors":"Imen Saidi","doi":"10.1016/j.micrna.2025.208195","DOIUrl":"10.1016/j.micrna.2025.208195","url":null,"abstract":"<div><div>This work provides a theoretical evaluation of the optical absorption associated with the intersuband in a symmetrical AlInN/GaN/AlInN/GaN/AlInN structure grown in a c-plane. The simulation process begins by solving the coupled Schrödinger-Poisson equations taking into account the effect of polarizations. Subsequently, the intersubband optical absorption coefficient derived from the density-matrix formalism is calculated. The effects of the variation of the indium composition in the central AlInN barrier and the employment of planar doping across the different layers in the AlInN/GaN/AlInN/GaN/AlInN structure on the intersubband absorption have been investigated. The analyzed results indicate that:(i) The intensity of the threshold of the absorption coefficient as well as its energetic position are affected by the indium composition and the ionization rate of the impurity. (ii) The adjustment of the indium composition and the planar doping allow the structure to achieve the desired transition that is <span><math><mrow><mn>1.55</mn><mspace></mspace><mi>μ</mi><mi>m</mi></mrow></math></span> (i.e.,0.80 eV). The outcome of this work provides new prospects for optical properties associated with intersubband transitions of indium III-nitride structures, highlighting their potential for application in communication.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208195"},"PeriodicalIF":2.7,"publicationDate":"2025-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143943036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Fe-doping starting depth impacts on static and transient characteristics of AlGaN/GaN HEMTs fe掺杂起始深度对AlGaN/GaN hemt静态和瞬态特性的影响

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-06 DOI: 10.1016/j.micrna.2025.208197

Vaidehi Vijay Painter , Raphael Sommet , Christophe Chang , Valeria Di Giacomo Brunel , Florent Gaillard , Jean-Christophe Nallatamby , P. Vigneshwara Raja

{"title":"Fe-doping starting depth impacts on static and transient characteristics of AlGaN/GaN HEMTs","authors":"Vaidehi Vijay Painter , Raphael Sommet , Christophe Chang , Valeria Di Giacomo Brunel , Florent Gaillard , Jean-Christophe Nallatamby , P. Vigneshwara Raja","doi":"10.1016/j.micrna.2025.208197","DOIUrl":"10.1016/j.micrna.2025.208197","url":null,"abstract":"<div><div>The Fe-doping starting depth impacts on static and transient characteristics are investigated in two AlGaN/GaN HEMT structures (HEMT-1 and HEMT-2). The compensational Fe-doping in the GaN buffer layer starts at 0.5 μm distance from the channel top edge in HEMT-1, while the Fe-doping originates at 0.7 μm depth from the channel in the HEMT-2. The HEMT-2 has shown promising results, such as high drain current, low current collapse, absence of kink effect, and relatively smaller subthreshold slope, than HEMT-1 at the expense of high gate leakage current. These findings reveal that the Fe-doping introduction 0.7 μm away from the channel can properly balance the 2DEG confinement and the buffer trapping effects. The drain current transient (DCT) results indicate slow trapping and detrapping dynamics for the Fe-related defect and reduced signal amplitude (mitigated trapping) in HEMT-2, compared to HEMT-1. The DCT outcomes are consistent with output-admittance (<em>Y</em><sub><em>22</em></sub>) parameters.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208197"},"PeriodicalIF":2.7,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143916609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First-principles investigation of noble metal-decorated reduced Graphene Oxide for ultrasensitive detection of Methane 贵金属修饰还原氧化石墨烯超灵敏检测甲烷的第一性原理研究

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-06 DOI: 10.1016/j.micrna.2025.208184

Arti Kumari , Manodipan Sahoo , R. Thangavel , Somenath Roy

{"title":"First-principles investigation of noble metal-decorated reduced Graphene Oxide for ultrasensitive detection of Methane","authors":"Arti Kumari , Manodipan Sahoo , R. Thangavel , Somenath Roy","doi":"10.1016/j.micrna.2025.208184","DOIUrl":"10.1016/j.micrna.2025.208184","url":null,"abstract":"<div><div>Methane (CH<sub>4</sub>) detection is essential for industrial safety, environmental monitoring, and various technological applications. Reduced graphene oxide (rGO) has shown significant promise as a gas-sensing material, particularly when decorated with noble metals using palladium (Pd), platinum (Pt), or gold (Au). This research explores the potential of noble metal-decorated rGO for CH<sub>4</sub> detection through advanced computational methods, including density functional theory (DFT) and non-equilibrium Green’s function (NEGF) approaches. The study systematically examines the structural, electronic, adsorption, and current–voltage (I–V) characteristics of rGO systems decorated with Pd, Pt, and Au. The findings reveal that noble metal atoms strongly bind to the rGO surface, markedly improving its chemical reactivity and electronic transport properties. Among the configurations analyzed, Pd-decorated rGO (rGO-Pd) demonstrated the highest CH<sub>4</sub> adsorption efficiency, surpassing rGO-Pt and rGO-Au. Sensing response values were recorded as 50.15%, 84.23%, 60.45%, and 20.5% for rGO/CH<sub>4</sub>, rGO-Pd/CH<sub>4</sub>, rGO-Pt/CH<sub>4</sub>, and rGO-Au/CH<sub>4</sub>, respectively, within a bias voltage range of 0 to 2.4 V. These results highlight rGO-Pd as an optimal material for CH<sub>4</sub> detection, offering significant potential for creating effective and reliable gas sensors. The computational insights gained in this study contribute to the advancement of rGO-based chemiresistive sensors for practical applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208184"},"PeriodicalIF":2.7,"publicationDate":"2025-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143922242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Solution-processed cobalt doping for performance enhancement of p-type NiO thin-film transistors 溶液法掺杂钴增强p型NiO薄膜晶体管性能

IF 2.7

Micro and Nanostructures Pub Date : 2025-05-05 DOI: 10.1016/j.micrna.2025.208196

Yerim Lee , Tae-Gyu Hwang , Won-Ju Cho , Khang June Lee , Hamin Park

{"title":"Solution-processed cobalt doping for performance enhancement of p-type NiO thin-film transistors","authors":"Yerim Lee , Tae-Gyu Hwang , Won-Ju Cho , Khang June Lee , Hamin Park","doi":"10.1016/j.micrna.2025.208196","DOIUrl":"10.1016/j.micrna.2025.208196","url":null,"abstract":"<div><div>Oxide semiconductors have become key materials in electronic applications. However, the electrical performance of p-type oxides remains inferior to that of n-type oxides, which is a critical limitation that hinders the application of complementary metal–oxide–semiconductor (CMOS) based on oxide semiconductors. Therefore, enhancing the electrical performance of p-type oxide thin-film transistors (TFTs) is crucial to achieve the performance standards required for CMOS applications. Herein, we report solution-processed p-type NiO TFTs with an enhanced field-effect hole mobility (0.32 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>) and on–off current ratio (3.3 × 10<sup>3</sup>), which have been achieved by optimizing the thermal annealing and cobalt doping parameters. An annealing temperature of 500 °C and a cobalt doping concentration of 10 at.% provide the highest hole mobility and on–off current ratio. The enhancement mechanism in the p-type NiO channel is analyzed by X-ray photoelectron spectroscopy, X-ray diffraction, and ultraviolet–visible spectroscopy. The spectroscopic analysis reveals the effect of the characteristics of the NiO thin films, such as the energy bandgap, crystallinity, and Ni–O bonding characteristics, on the electrical properties of the p-type NiO TFTs. Our findings provide insights for further improving the electrical performance of p-type oxide semiconductors.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208196"},"PeriodicalIF":2.7,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143916610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0