Micro and Nanostructures最新文献_第10页

Two-dimensional Sc2O3 monolayer with tunable ultrawide bandgap for solar-blind ultraviolet photodetector 具有可调超宽带隙的二维 Sc2O3 单层，用于日光盲紫外线光电探测器

IF 2.7

Micro and Nanostructures Pub Date : 2024-10-31 DOI: 10.1016/j.micrna.2024.208012

Bo Meng , Wen-Zhi Xiao

{"title":"Two-dimensional Sc2O3 monolayer with tunable ultrawide bandgap for solar-blind ultraviolet photodetector","authors":"Bo Meng , Wen-Zhi Xiao","doi":"10.1016/j.micrna.2024.208012","DOIUrl":"10.1016/j.micrna.2024.208012","url":null,"abstract":"<div><div>A novel 2D scandia (Sc<sub>2</sub>O<sub>3</sub>) monolayer was identified using an evolutionary algorithm-based crystal structure prediction method. The Sc<sub>2</sub>O<sub>3</sub> monolayer exhibits a <span><math><mrow><mi>P</mi><mover><mn>3</mn><mo>‾</mo></mover><mi>m</mi><mn>1</mn></mrow></math></span> symmetry and excellent energetic, thermal, dynamical, and mechanical stability, as well as good mechanical flexibility. The monolayer possesses an ultrawide indirect band gap of 6.246 eV. The monolayer is transparent in the visible light zone, while the large exciton effect leads to significant absorption in the solar-blind and vacuum ultraviolet regions. The band gap of this monolayer can be reduced monotonically by external biaxial tensile strain, resulting in the absorption spectrum covering the entire solar blind spectral region when the load reaches 5.0 %. Additionally, the monolayer has an ultra-high in-plane dielectric constant of approximately 50. The superior stability, flexibility, and strain-tunable electronic and optical properties, as well as the ultra-high dielectric constant, suggest its potential application in a solar-blind photodetector in harsh environments.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"196 ","pages":"Article 208012"},"PeriodicalIF":2.7,"publicationDate":"2024-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142586433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of random ferroelectric and dielectric phase distributions on junctionless ferroelectric field effect transistors 随机铁电和介电相分布对无结铁电场效应晶体管的影响

IF 2.7

Micro and Nanostructures Pub Date : 2024-10-30 DOI: 10.1016/j.micrna.2024.207997

Honglei Huo, Weifeng Lü, Yubin Wang, Shuaiwei Zhao, Xinfeng Zheng

{"title":"Effects of random ferroelectric and dielectric phase distributions on junctionless ferroelectric field effect transistors","authors":"Honglei Huo, Weifeng Lü, Yubin Wang, Shuaiwei Zhao, Xinfeng Zheng","doi":"10.1016/j.micrna.2024.207997","DOIUrl":"10.1016/j.micrna.2024.207997","url":null,"abstract":"<div><div>In this study, we comprehensively investigated the effects of random ferroelectric (FE) and dielectric (DE) phase distributions on junctionless ferroelectric field-effect transistors (JL-FeFETs). The Poisson–Voronoi tessellation (PVT) algorithm, which corresponds to the physical growth mechanism, was used to obtain grain nucleation in the ferroelectric layer. The simulation results demonstrated that as the probability of FE phase decreased from 80% to 40%, the standard deviation of the memory window (<span><math><msub><mrow><mi>σ</mi></mrow><mrow><mtext>MW</mtext></mrow></msub></math></span>) increased from 62.4 to 99.5 mV, and the possibility of forming a blocking current path from the source to the drain increased, which degraded the memory window (MW). The simulation results indicated that decreasing the gate length and width increased device variations. Furthermore, <span><math><msub><mrow><mi>σ</mi></mrow><mrow><mtext>MW</mtext></mrow></msub></math></span> decreased from 84.5 to 58.9 mV as the grain size decreased from 5 to 3 nm.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"196 ","pages":"Article 207997"},"PeriodicalIF":2.7,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142578212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Electronic States and transmission in GaAs/GaAlAs multi-quantum wells with geometrical defects 具有几何缺陷的砷化镓/砷化镓多量子阱中的电子状态和传输

IF 2.7

Micro and Nanostructures Pub Date : 2024-10-30 DOI: 10.1016/j.micrna.2024.208002

F.Z. Elamri, A. Baidri, F. Falyouni, D. Bria

{"title":"Electronic States and transmission in GaAs/GaAlAs multi-quantum wells with geometrical defects","authors":"F.Z. Elamri, A. Baidri, F. Falyouni, D. Bria","doi":"10.1016/j.micrna.2024.208002","DOIUrl":"10.1016/j.micrna.2024.208002","url":null,"abstract":"<div><div>In this paper, we use the Green’s function approach to conduct the theoretical study of the propagation of electron waves in a multi-quantum wells (MQWs) made up of GaAs and GaAlAs layers with a periodic structure. Localized electronic states are produced inside the band gaps due to the presence of defects of various types inside the MQWs. These states are extremely sensitive to the thicknesses and the position of the different inserted defect layers. The transmission rate of these states is always at its highest as the number of defects rises. Similar to this, we found that the transmission rates of these defect layers decrease the further apart they are. Thus, when the defect position is separated by more than two cells, this kind of interaction is stronger; however, when they are brought closer, it is weaker. Due to the energy transfer between the various electronic states created inside the band gaps, the origin of the states induced by the wells defect becomes a state induced by the barrier defect, and vice versa. This causes a change on the behavior of the induced electronic localized states.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"196 ","pages":"Article 208002"},"PeriodicalIF":2.7,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142586432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study of A Heterojunction Double Gate Ferroelectric p-n-i-n Tunnel FET combining analytical modeling and TCAD simulation 结合分析建模和 TCAD 仿真研究异质结双栅极铁电 p-ni-i-n 隧道场效应晶体管

IF 2.7

Micro and Nanostructures Pub Date : 2024-10-29 DOI: 10.1016/j.micrna.2024.208003

Shib Sankar Das , Sudipta Ghosh , Subir Kumar Sarkar

{"title":"Study of A Heterojunction Double Gate Ferroelectric p-n-i-n Tunnel FET combining analytical modeling and TCAD simulation","authors":"Shib Sankar Das , Sudipta Ghosh , Subir Kumar Sarkar","doi":"10.1016/j.micrna.2024.208003","DOIUrl":"10.1016/j.micrna.2024.208003","url":null,"abstract":"<div><div><strong><em>A short channel Heterojunction Double Gate Ferroelectric p-n-i-n Tunnel Field Effect Transistor structure is proposed in this article to alleviate undesirable ambipolarity and Miller Capacitance and has a steeper subthreshold swing with improvement in ON state current compared to other conventional TFET structures. This work develops a physics based relevant analytical model of surface potential with the effect of gate fringing field and inclusive source and channel depletion region, drain current model, terminal charge and capacitance model to investigate its transient performance for the impact of ferroelectric polarization according to the Miller Ferroelectric polarization model. The proposed device is also validated using the SILVACO ATLAS device simulator, which yields a good agreement with the model, establishing its reliability and acceptability. The device achieves a steeper subthreshold of 31.3 mV/decade, an improved ON current</em></strong> <span><math><mrow><mo>∼</mo></mrow></math></span> <strong><em>5.9 x 10</em></strong><sup><strong><em>−4</em></strong></sup> <strong><em>A/</em></strong> <span><math><mrow><mi>μ</mi><mi>m</mi></mrow></math></span> <strong><em>and enhanced transconductance</em></strong> <span><math><mrow><mo>∼</mo></mrow></math></span> <strong><em>0.105 ms as well as a very low energy delay product (EDP)</em></strong> <span><math><mrow><mo>∼</mo></mrow></math></span> <strong><em>4.07 x 10</em></strong><sup><strong><em>−3</em></strong></sup> <strong><em>Js with hysteresis free operation at a low supply voltage</em></strong> <span><math><mrow><mo>∼</mo></mrow></math></span> <strong><em>0.5 V in a 40 nm technology node, making it desirable for ultra-low power analog and logic applications.</em></strong></div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"196 ","pages":"Article 208003"},"PeriodicalIF":2.7,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142593220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evaluation of sensitivity in a vertically misaligned double-gate electrolyte-insulator-semiconductor extended source tunnel FET as pH sensor 评估作为 pH 传感器的垂直错位双栅电解质-绝缘体-半导体扩展源隧道场效应晶体管的灵敏度

IF 2.7

Micro and Nanostructures Pub Date : 2024-10-29 DOI: 10.1016/j.micrna.2024.208005

Mohd Haroon Khan , Mohamed Fauzi Packeer Mohamed , Muhammad Firdaus Akbar , Girish Wadhwa , Prashant Mani

{"title":"Evaluation of sensitivity in a vertically misaligned double-gate electrolyte-insulator-semiconductor extended source tunnel FET as pH sensor","authors":"Mohd Haroon Khan , Mohamed Fauzi Packeer Mohamed , Muhammad Firdaus Akbar , Girish Wadhwa , Prashant Mani","doi":"10.1016/j.micrna.2024.208005","DOIUrl":"10.1016/j.micrna.2024.208005","url":null,"abstract":"<div><div>In this research, the primary objective is to investigate the impact of vertical gate misalignment on the source and drain regions of 30 nm. The double-gate Electrolyte-Insulated-Semiconductor extended-source Tunnel Field-Effect Transistor (ES-VTFET) is proposed for its potential application as a pH sensor. The gate electrode cannot be perfectly aligned with the channel due to fabrication tolerances, particularly in very short-channel structures. This study aims to introduce a vertical electrolyte Bio-TFET-based pH sensor capable of detecting pH changes in aqueous (electrolyte) solutions. The effect of variation in pH values on the electrical characteristics of the device such as drain current (<span><math><mrow><msub><mi>I</mi><mrow><mi>D</mi><mi>S</mi></mrow></msub></mrow></math></span>), transconductance (<span><math><mrow><msub><mi>g</mi><mi>m</mi></msub></mrow></math></span>), voltage sensitivity (<span><math><mrow><msub><mi>S</mi><mi>V</mi></msub></mrow></math></span>) and current sensitivity (<span><math><mrow><msub><mi>S</mi><mi>I</mi></msub></mrow></math></span>) have been examined. It has been assumed that the electrolyte section is an intrinsic semiconductor material where electrons and holes signify mobile ions in aqueous solutions. The electrolyte region has an electrolyte dielectric constant of 78, an energy bandgap of 1.12 eV, and an electron affinity of 1.32 eV. Finally, the gate misalignment aspect of the proposed bio TFET-based pH sensor is emphasized by comparing sensitivity parameters. Hence, the proposed pH sensor can be used as a potential candidate for the futuristic application of biosensors.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"196 ","pages":"Article 208005"},"PeriodicalIF":2.7,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142572268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A dynamically switchable and tunable metamaterial device based on vanadium dioxide and Dirac semimetal 基于二氧化钒和狄拉克半金属的动态可切换、可调谐超材料器件

IF 2.7

Micro and Nanostructures Pub Date : 2024-10-28 DOI: 10.1016/j.micrna.2024.208004

Yuchen Li , Min Zhou , Jinping Tian , Rongcao Yang

{"title":"A dynamically switchable and tunable metamaterial device based on vanadium dioxide and Dirac semimetal","authors":"Yuchen Li , Min Zhou , Jinping Tian , Rongcao Yang","doi":"10.1016/j.micrna.2024.208004","DOIUrl":"10.1016/j.micrna.2024.208004","url":null,"abstract":"<div><div>In this paper, a dual-function metamaterial device based on vanadium dioxide (VO<sub>2</sub>) and Dirac semimetal (DS) operating in terahertz (THz) frequency range is designed. The reversible phase transition properties of VO<sub>2</sub> are exploited to achieve the dynamic switch between the function of broadband absorption and broadband polarization conversion. It is demonstrated that when VO<sub>2</sub> is in the metallic state and the Fermi energy level (<span><math><mrow><msub><mi>E</mi><mi>f</mi></msub></mrow></math></span>) of DS is set to 30 <span><math><mrow><mtext>meV,</mtext></mrow></math></span> the broadband absorption in the operating frequency range of 1.42–3.40 THz can be achieved, and its absorbance exceeds 90 % with a relative bandwidth of 82.16 %. When VO<sub>2</sub> is in the insulating state and the <span><math><mrow><msub><mi>E</mi><mi>f</mi></msub></mrow></math></span> of DS is set at 180 <span><math><mrow><mtext>meV</mtext></mrow></math></span>, the high efficient broadband polarization conversion can be obtained in the operating frequency range of 2.08–4.88 THz and the polarization conversion ratio (PCR) is greater than 90 % with a relative bandwidth of up to 80.46 %. Therefore, the proposed switchable dual-functional THz device can be extensively utilized in absorption, polarization conversion and other potential fields.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"196 ","pages":"Article 208004"},"PeriodicalIF":2.7,"publicationDate":"2024-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142553208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Numerical simulation of core shell dual metal gate stack junctionless accumulation mode nanowire FET (CS-DM-GS-JAMNWFET) for low power digital applications 用于低功耗数字应用的芯壳双金属栅极堆叠无结累加模式纳米线场效应晶体管（CS-DM-GS-JAMNWFET）的数值模拟

IF 2.7

Micro and Nanostructures Pub Date : 2024-10-24 DOI: 10.1016/j.micrna.2024.207995

Anupama , Sonam Rewari , Neeta Pandey

{"title":"Numerical simulation of core shell dual metal gate stack junctionless accumulation mode nanowire FET (CS-DM-GS-JAMNWFET) for low power digital applications","authors":"Anupama , Sonam Rewari , Neeta Pandey","doi":"10.1016/j.micrna.2024.207995","DOIUrl":"10.1016/j.micrna.2024.207995","url":null,"abstract":"<div><div>In this paper, Core Shell Dual Metal Gate Stack Junctionless Accumulation Mode Nanowire FET (CS-DM-GS-JAMNWFET) is proposed, which has enhanced performance and is suitable for analog and digital applications. A high-k gate stack engineering, Hafnium Oxide (HfO<sub>2</sub>) is deployed in the outer as well as inner gate oxides of the core shell structure. The proposed device is compared with CS-DM-JAMNWFET, CS-SM-JAMNWFET, DM-GS-JAMNWFET, DM-JAMNWFET, and SM-JAMNWFET by maintaining a constant threshold voltage for all structures. The proposed CS-DM-GS-JAMNWFET provides a substantial reduction in subthreshold current with a high I<sub>on</sub>/I<sub>off</sub> ratio as compared to other competent device structures. Also, the proposed device exhibits improvements in various parameters compared to the SM-JAMNWFET. It shows improvement in drain current (2.27 times), output conductance (2.14 times), subthreshold swing (0.94 times), transconductance (2.47 times), gate capacitance (2.00 times), cut-off frequency (1.24 times), intrinsic gain (12.95 times), current gain (1.46), I<sub>on</sub>/I<sub>off</sub> ratio (6.15 times), unilateral power gain (1.09 times), maximum transducer power gain (1.08 times), Transconductance Generation factor (1.08 times), gain frequency product (14.61 times), transconductance frequency product (1.32 times), and gain transconductance frequency product (17.27 times). These benefits are due to combined advantages of the dual metal high-k dielectric HfO<sub>2</sub> structure in core shell JAM FET, which enhances the device's gate dominance over the channel with high driving current.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"196 ","pages":"Article 207995"},"PeriodicalIF":2.7,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142699420","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Sensitivity analysis of an inverted T-shaped vertical tunneling field effect transistor biosensor based on inserted finger type 基于插入式手指的倒 T 型垂直隧道场效应晶体管生物传感器的灵敏度分析

IF 2.7

Micro and Nanostructures Pub Date : 2024-10-23 DOI: 10.1016/j.micrna.2024.208001

Xingyu Wei, Hujun Jia, Linna Zhao, Qiyu Su, Weitao Cao, Wanli Yang, Zhen Cao, Yintang Yang

{"title":"Sensitivity analysis of an inverted T-shaped vertical tunneling field effect transistor biosensor based on inserted finger type","authors":"Xingyu Wei, Hujun Jia, Linna Zhao, Qiyu Su, Weitao Cao, Wanli Yang, Zhen Cao, Yintang Yang","doi":"10.1016/j.micrna.2024.208001","DOIUrl":"10.1016/j.micrna.2024.208001","url":null,"abstract":"<div><div>This paper presents a biosensor based on a finger-inserted inverted T-shaped vertical tunneling field effect transistor (FP-T-TFET). In order to improve the sensitivity and performance of the biosensor, a finger-inserted contact between the source and the channel is used. A comparative analysis between the biosensor based on FP-T-TFET and conventional inverted T-shaped TFET (T-TFET) is simulated for the electrical properties and sensitivity of neutral biomolecules with different dielectric constants and charged biomolecules with different charge densities. The noise analysis of the proposed structure is also performed. Then, the effects of insertion finger distribution, cavity size and filling volume on the performance of FP-T-TFET are investigated. Finally, the structure was subjected to linear analysis, in which the pearson coefficient was 0.92, indicating that the structure has good linear correlation. The results show that the FP-T-TFET biosensor has higher sensitivity in detecting various neutral and charged biomolecules. All device simulations were performed in the TCAD environment with a well-calibrated structure.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"196 ","pages":"Article 208001"},"PeriodicalIF":2.7,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142528599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First principles study of point defects and Li doping on the electronic structure and photovoltaic performance of single-layer GaN 点缺陷和锂掺杂对单层氮化镓电子结构和光伏性能的第一性原理研究

IF 2.7

Micro and Nanostructures Pub Date : 2024-10-23 DOI: 10.1016/j.micrna.2024.208000

Jinji Si , Qingyu Hou , Weiya Li , Yi Liu , Riguleng Si

引用次数: 0

Impact of SiGe pocket on different shape TFET structures for gas sensing application 用于气体传感应用的不同形状 TFET 结构对 SiGe 袋的影响

IF 2.7

Micro and Nanostructures Pub Date : 2024-10-22 DOI: 10.1016/j.micrna.2024.207998

Yeroosan Getachew Hirphaa, Avtar Singh, Tadesse Hailu, Chaliti Fikadu Wakweya

{"title":"Impact of SiGe pocket on different shape TFET structures for gas sensing application","authors":"Yeroosan Getachew Hirphaa, Avtar Singh, Tadesse Hailu, Chaliti Fikadu Wakweya","doi":"10.1016/j.micrna.2024.207998","DOIUrl":"10.1016/j.micrna.2024.207998","url":null,"abstract":"<div><div>Gas sensing requires highly sensitive and selective sensor technologies for environmental monitoring, industrial safety, and public health objectives. Although conventional MOSFET-based gas sensors are widely utilized, their detection of low quantities of gases, such as ammonia, is hindered by a number of severe constraints. TFET is emerged as the better device than MOSFET, particularly for the sensing applications. In this work we discussed the source engineered and shape engineered techniques to improve the performance of TFETs, specifically for ammonia gas detection. Comprehensive simulations on SILVACO TCAD and compared the four TFET structures SiGe-pocket DGTFET, SiGe-pocket vertical TFET SiGe-pocket Z-shape TFET, and SiGe-pocket U-shape TFET structure on the basis of various electrical characterization parameters. Significant improvements in efficiency and sensitivity are obtained by adjusting the work function of the molybdenum (4.40–4.60 eV) catalytic gate metal to find the optimal values. The findings reveal that the SiGe-pocket U-shape TFET structure exhibits superior performance, demonstrating an I<sub>ON</sub> of 8.01 × 10<sup>−4</sup> A/μm, an I<sub>ON</sub>/I<sub>OFF</sub> ratio of 1.25×10<sup>13</sup>, and an OFF current sensitivity (S<sub>OFF</sub>) of 1.262. These results highlight the enhanced sensitivity and efficacy of the proposed SiGe-pocket U-shape tunnel FET in ammonia gas sensing applications, making it a promising candidate for practical uses in environmental monitoring and industrial safety.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"196 ","pages":"Article 207998"},"PeriodicalIF":2.7,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142528600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0