Micro and Nanostructures最新文献_第10页

Metamaterial structure design based on genetic algorithm and phase change material GST for multispectral camouflage 基于遗传算法和相变材料 GST 的多光谱伪装超材料结构设计

IF 2.7

Micro and Nanostructures Pub Date : 2024-09-10 DOI: 10.1016/j.micrna.2024.207985

Yaxin Zhou , Xin Li , Sihan Nie , Pengfei Sun , Lijing Su , Yang Gao

引用次数: 0

Pragmatic structure optimization: Achieving optimal crosstalk delay and gate oxide reliability of randomly mixed CNT bundle interconnects 务实的结构优化：实现随机混合碳纳米管束互连的最佳串扰延迟和栅极氧化层可靠性

IF 2.7

Micro and Nanostructures Pub Date : 2024-09-08 DOI: 10.1016/j.micrna.2024.207983

Ritika Sharma, Mayank Kumar Rai, Rajesh Khanna

{"title":"Pragmatic structure optimization: Achieving optimal crosstalk delay and gate oxide reliability of randomly mixed CNT bundle interconnects","authors":"Ritika Sharma, Mayank Kumar Rai, Rajesh Khanna","doi":"10.1016/j.micrna.2024.207983","DOIUrl":"10.1016/j.micrna.2024.207983","url":null,"abstract":"<div>This study explores the potential of randomly mixed carbon nanotube bundle (RMCB) as a viable on-chip interconnect. Achieving high-quality carbon nanotubes (CNTs) with uniform diameters is challenging for the current framework of enhanced fabrication techniques. The Stoyan and Yaskov technique is employed to optimize CNT arrangement within a specified rectangular area. This method accounts for statistical variation in CNT diameters, offering a more realistic and fabrication-focused approach to designing CNT bundle interconnects. Eight such practical RMCB structures (RMCB-50 to RMCB-350) are selected using this technique, each characterized by distinct CNT counts and variable diameters. Comprehensive average crosstalk-delay and reliability assessments are conducted by comparing different CNT bundle interconnects with the best-optimized RMCB (O-RMCB) interconnect, placed on various dielectric substrates such as SiO2, SiC, BN. The study unequivocally indicates that O-RMCB produces highly favorable results and stands as the most suitable future solution for VLSI circuits. Additionally, the thickness optimization of O-RMCB interconnect is explored, yielding in improvements in both performance and reliability compared to other well-known CNT bundled interconnects.</div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"195 ","pages":"Article 207983"},"PeriodicalIF":2.7,"publicationDate":"2024-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142167206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A novel peony shaped ZnO and its excellent ethanol gas-sensing performance 新型牡丹形氧化锌及其优异的乙醇气体传感性能

IF 2.7

Micro and Nanostructures Pub Date : 2024-09-07 DOI: 10.1016/j.micrna.2024.207982

Zhongming Sun , Songtao Liu , Junbo Wang , Fang Si , Haiyun Hou , Xianjun Zheng , Jianjiang Liu , Chengyu Fang

引用次数: 0

Innovative Spacer material integration in Tree-FETs for enhanced performance across Variable channel lengths 在树型场效应晶体管中集成创新的间隔材料，以提高不同沟道长度的性能

IF 2.7

Micro and Nanostructures Pub Date : 2024-09-06 DOI: 10.1016/j.micrna.2024.207974

Dharavath Parvathi, P Prithvi

{"title":"Innovative Spacer material integration in Tree-FETs for enhanced performance across Variable channel lengths","authors":"Dharavath Parvathi, P Prithvi","doi":"10.1016/j.micrna.2024.207974","DOIUrl":"10.1016/j.micrna.2024.207974","url":null,"abstract":"<div>This work presents a novel three-channel Tree-FET optimized for superior DC and analog performance metrics. The device structure features nanosheets with a width (NSWD) of 9 nm, a thickness (NSTH) of 5 nm, and interbidge dimensions of 8 nm in height (IBHT) and 5 nm in width (IBWD). The Tree-FET demonstrates an exceptional on/off current ratio of 107 through meticulous engineering, significantly outperforming conventional FET configurations. Our comprehensive study explores the effects of different spacer materials, including HfO2, Al2O3, Si3N4, and SiO2, across varied channel lengths. The superior dielectric properties of HfO2 contribute to fine-tuning the device's characteristics, making it a standout choice for optimizing performance. Out of all HfO2 has been found to perform exceptionally well, offering the best combination of electrostatic control and minimized leakage currents. Because the Tree-FET has better electrostatic integrity and can keep working well with different spacer materials and channel lengths, it has much potential as a flexible and valuable part for next-generation semiconductor devices. The promising DC and analog metrics achieved through this novel design pave the way for developing more compact, high-performance electronic components.</div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"195 ","pages":"Article 207974"},"PeriodicalIF":2.7,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142157989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An embedded gate gate-all-around FinFET for biosensing application 用于生物传感应用的嵌入式全栅极 FinFET

IF 2.7

Micro and Nanostructures Pub Date : 2024-08-31 DOI: 10.1016/j.micrna.2024.207972

Hujun Jia, Wanli Yang, Weitao Cao, Linna Zhao, Qiyu Su, Xingyu Wei, Zhen Cao, Yintang Yang

{"title":"An embedded gate gate-all-around FinFET for biosensing application","authors":"Hujun Jia, Wanli Yang, Weitao Cao, Linna Zhao, Qiyu Su, Xingyu Wei, Zhen Cao, Yintang Yang","doi":"10.1016/j.micrna.2024.207972","DOIUrl":"10.1016/j.micrna.2024.207972","url":null,"abstract":"<div>A dielectric modulated embedded gate gate-all-around fin field-effect transistor (EGGAA-FinFET) has been proposed for label-free detection applications of biomolecules in this article. The design expands the biomolecule capture area by establishing a cavity below the embedded gate. The performance of EGGAA-FinFET and FinFET biosensors is analyzed in a comprehensive comparison in terms of electrical performance, sensitivity and selectivity. Some important biosensing characteristics for EGGAA-FinFET (FinFET) have been calculated to be 0.43 V (0.32 V) for threshold voltage sensitivity, 2.22 × 106 (8.32 × 104) for current switching ratio sensitivity, and 0.75 (0.65) for subthreshold swing sensitivity. To determine the optimal structure of the biosensor, the effect of structural parameters on sensitivity is investigated. In addition, the effect of the filling factor on the biosensor is considered. The real-world performance of biosensors is assessed using the linearity parameter, showing that the EGGAA-FinFET biosensor has better noise resistance compared to the FinFET biosensor.</div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"195 ","pages":"Article 207972"},"PeriodicalIF":2.7,"publicationDate":"2024-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142229455","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Frequency-domain analysis of CMOS-driven interconnects utilizing doped multilayer graphene nanoribbons and mixed carbon nanotube bundles 利用掺杂多层石墨烯纳米带和混合碳纳米管束的 CMOS 驱动型互连的频域分析

IF 2.7

Micro and Nanostructures Pub Date : 2024-08-31 DOI: 10.1016/j.micrna.2024.207973

Tajinder Kaur , Aashish Kumar , Mayank Kumar Rai

{"title":"Frequency-domain analysis of CMOS-driven interconnects utilizing doped multilayer graphene nanoribbons and mixed carbon nanotube bundles","authors":"Tajinder Kaur , Aashish Kumar , Mayank Kumar Rai","doi":"10.1016/j.micrna.2024.207973","DOIUrl":"10.1016/j.micrna.2024.207973","url":null,"abstract":"<div>A frequency-domain model is developed to analyze isolated interconnects of multilayer graphene-nanoribbon (MLGNR) and mixed carbon-nanotube bundle (MCB) driven by CMOS gates. The model derived is founded on an equivalent-single-conductor model of MLGNR and MCB that takes thermal considerations into account (i.e. TD-ESC). The model includes the derivation of transfer function of interconnect to estimate its delay and bandwidth performance. The attained results, reveals that among the neutral MLGNR (N-MLGNR), intercalation doped MLGNR (ID-MLGNR) intercalated with FeCl3, MCB and Cu interconnects, FeCl3 ID-MLGNR achieves the best bandwidth efficiency. At a global interconnect length of 1 mm, FeCl3 ID-MLGNR outperforms N-MLGNR, MCB, and Cu in terms of bandwidth with an improved bandwidth value of 12.2 GHz, 7 GHz, and 61.4 GHz, respectively. Further, employing the proposed CMOS-gate-driven model, for FeCl3 ID-MLGNR, bandwidth is improved by nearly 7.52 × at global length (∼1 mm) in relation to the linear resistance model. Additionally, TD-ESC dependency of the proposed model reveals that FeCl3 ID-MLGNR becomes more stable as interconnect resistance increases.</div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"195 ","pages":"Article 207973"},"PeriodicalIF":2.7,"publicationDate":"2024-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142136542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High performance E-mode NiO/β-Ga2O3 HJ-FET with high conduction band offset and thin recessed channel 具有高导带偏移和薄凹槽的高性能 E 模式 NiO/β-Ga2O3 HJ-FET

IF 2.7

Micro and Nanostructures Pub Date : 2024-08-30 DOI: 10.1016/j.micrna.2024.207963

Jiaweiwen Huang , Wensuo Chen , Shenglei Zhao , Qisheng Yu , Aohang Zhang , Kunfeng Zhu , Jian Li

{"title":"High performance E-mode NiO/β-Ga2O3 HJ-FET with high conduction band offset and thin recessed channel","authors":"Jiaweiwen Huang , Wensuo Chen , Shenglei Zhao , Qisheng Yu , Aohang Zhang , Kunfeng Zhu , Jian Li","doi":"10.1016/j.micrna.2024.207963","DOIUrl":"10.1016/j.micrna.2024.207963","url":null,"abstract":"<div>In this paper, an enhancement-mode (E-mode) NiO/β-Ga2O3 heterojunction field-effect transistor (HJ-FET) with high conduction band offset (ΔEC) and thin recessed channel is proposed and studied by Sentaurus TCAD. Different from the existing HJ-FET with low ΔEC alignment, the High ΔEC HJ-FET can achieve a much lower on-resistance (Ron) due to the strong electron confinement effect. More importantly, the disadvantage in the threshold voltage (Vth) is compensated by reducing the thickness of the recessed channel, maintaining an almost unchanged Ron with the help of the special surface conduction channel. Compared with the corresponding Low ΔEC HJ-FET, at the same Vth (<math><mrow><mo>∼</mo></mrow></math> 0.82 V), the Ron is decreased from 135 Ω/mm to 90.7 Ω/mm and the maximum drain current is increased from 14.9 mA/mm to 83.1 mA/mm. By adding a top p-NiO layer for further optimization, a greatly improved power figure of merit (P-FOM) of 2.29 GW/cm2 is achieved among the E-mode HJ-FETs. These results show that the proposed High ΔEC HJ-FET with thin recessed channel is probably a better choice to achieve the high-performance E-mode lateral HJ-FET.</div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"195 ","pages":"Article 207963"},"PeriodicalIF":2.7,"publicationDate":"2024-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142136543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design of a 4H–SiC Schottky barrier FET biosensor with dual-source and dual-drain on suspended beam channel 在悬梁通道上设计具有双源和双漏的 4H-SiC 肖特基势垒 FET 生物传感器

IF 2.7

Micro and Nanostructures Pub Date : 2024-08-26 DOI: 10.1016/j.micrna.2024.207962

Hujun Jia, Linna Zhao, Qiyu Su, Weitao Cao, Wanli Yang, Xingyu Wei, Zhen Cao, Yintang Yang

引用次数: 0

P-type doped AlxGa1-xAs nanowire photocathode: A theoretical perspective on structural and optoelectronic properties P 型掺杂 AlxGa1-xAs 纳米线光电阴极：结构和光电特性的理论视角

IF 2.7

Micro and Nanostructures Pub Date : 2024-08-24 DOI: 10.1016/j.micrna.2024.207959

Yu Diao , Sihao Xia

{"title":"P-type doped AlxGa1-xAs nanowire photocathode: A theoretical perspective on structural and optoelectronic properties","authors":"Yu Diao , Sihao Xia","doi":"10.1016/j.micrna.2024.207959","DOIUrl":"10.1016/j.micrna.2024.207959","url":null,"abstract":"<div>In this work, the effect of p-type doping on the structural, electronic, and optical properties of AlxGa1-xAs nanowires are investigated by first-principles calculations. Different doping elements (Be, Mg, Zn), doping methods (interstitial and substitution doping) and doping concentration are considered. The calculations of formation energy suggest that the structural stability of p-type AlxGa1-xAs nanowires is gradually weaken as the rise of doping concentration and Al composition. Besides, the difficulty of forming substitution doping for different doping elements obeys the following order: Be < Mg < Zn. In addition, the substitution doping atom tends to replace Ga atom rather than Al atom to form substitution doping structure. After substitution doping, all energy bands shift to higher energy region due to the orbital hybridization of electronic states induced by impurity atom and nanowire atoms. Moreover, the substitution doping leads to the Fermi level entering into the valence band, resulting in obviously p-type conductivity. The p-type modulation doping is indeed effective in the axial type AlxGa1-xAs nanowires with p-type carrier concentration varying between 1.85 × 1020 cm−3 and 4.42 × 1020 cm−3, and the conductivity will be further enhanced with increasing substitution doping concentration or Al composition. Finally, the optical absorption of AlxGa1-xAs nanowire photocathodes can be effectively enhanced through BeGa doping. Our findings not only present a comprehensive understanding of p-type doping mechanism of AlxGa1-xAs nanowires, but also provide a theoretical basis for preparing AlxGa1-xAs nanowire based photoelectric devices with p-type properties.</div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"195 ","pages":"Article 207959"},"PeriodicalIF":2.7,"publicationDate":"2024-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142075937","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Improvement of digital, analog/RF and linearity performances of charge plasma based junctionless FinFET through spacer layer engineering 通过间隔层工程改善基于电荷等离子体的无结 FinFET 的数字、模拟/射频和线性性能

IF 2.7

Micro and Nanostructures Pub Date : 2024-08-24 DOI: 10.1016/j.micrna.2024.207961

Kallolini Banerjee , Abhijit Biswas

{"title":"Improvement of digital, analog/RF and linearity performances of charge plasma based junctionless FinFET through spacer layer engineering","authors":"Kallolini Banerjee , Abhijit Biswas","doi":"10.1016/j.micrna.2024.207961","DOIUrl":"10.1016/j.micrna.2024.207961","url":null,"abstract":"<div>We investigate the digital, analog/RF, and linearity performance of four CP FinFETs distinguished by spacer layers: (i) single low-k spacer on both sides of the gate (D1), (ii) single high-k spacer on both sides of the gate (D2), (iii) a combination of high-k spacer and air on the source side and high-k spacer on the drain side (D3), and (iv) a combination of high-k spacer and air symmetrically placed on both sides of the gate (D4) at 10 nm technology node. Our results highlight the superior digital performance of the D4 device, demonstrating significant enhancements in various analog/RF figures of merit (FOMs) including transconductance, transconductance efficiency, unity gain cut-off frequency (FT), and gain bandwidth product (GBP). Notably, the D4 device exhibits a remarkable 256 % improvement in FT and a substantial 456.13 % enhancement in GBP compared to D1. Additionally, we analyze linearity and intermodulation distortion performance, suggesting the D4 device as the optimal architecture for high-performance digital and analog/RF applications.</div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"195 ","pages":"Article 207961"},"PeriodicalIF":2.7,"publicationDate":"2024-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142099490","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0