Micro and Nanostructures最新文献

{"title":"Electron-hole bilayer TFET-based biosensor using hybrid tunneling mechanism for high off-state current and on-off current ratio sensitivities","authors":"Hu Liu ,&nbsp;Lei Pan ,&nbsp;Yifan Lei ,&nbsp;Yuzhe Song ,&nbsp;Peifeng Li ,&nbsp;Yubin Li ,&nbsp;Pengyu Wang","doi":"10.1016/j.micrna.2025.208266","DOIUrl":"10.1016/j.micrna.2025.208266","url":null,"abstract":"<div><div>To facilitate the injection of biomolecules and device integration, we design a novel vertical biosensor based on an electron-hole bilayer tunnel field-effect transistor. This biosensor utilizes the off-state point tunneling current for biomolecules detection, which makes its off-state current sensitivity (<em>S</em>_Ioff) independent of gate voltage, contributing to reduced power consumption. Its on-state current depends on the line tunneling between the electron-hole bilayer, allowing higher on-off current ratio sensitivity (<em>S</em>_Ion/Ioff) under low bias conditions. Investigations reveal enhanced sensitivity toward negatively charged biomolecules with high dielectric and charge density. Furthermore, optimal <em>S</em>_Ioff and <em>S</em>_Ion/Ioff are achieved when the bio-cavity width equals 4 nm. Investigations demonstrate that superior sensing performance can be obtained when probes with a high filling rate are concentrated on the right side of the bio-cavity, and the biomolecule filling rate significantly affects the detection ability of high-<em>k</em> biomolecules. Numerical calculations demonstrate that the proposed biosensor exhibits exceptional <em>S</em>_Ioff (∼10¹³) and <em>S</em>_Ion/Ioff (∼10¹²) at 0.5 V, significantly advancing the application potential of TFET-based biosensors in low-power fields.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208266"},"PeriodicalIF":2.7,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144563108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical study of ZrSe2 as an anode material for Ca ion batteries in sports engineering","authors":"Piyong Wei ,&nbsp;Li Wang ,&nbsp;Qin Wei","doi":"10.1016/j.micrna.2025.208262","DOIUrl":"10.1016/j.micrna.2025.208262","url":null,"abstract":"<div><div>The identification of an anode material characterized by high electronic conductivity, superior rate performance, and substantial storage capacity is crucial for the advancement of wearable devices within the field of sports engineering. This research employs first-principles calculations to elucidate the ion adsorption properties on the surface of ZrSe₂ and to evaluate its viability as an anode material. The findings indicate that monolayer ZrSe₂ exhibits remarkable structural stability. Additionally, intrinsic ZrSe₂ is identified as an indirect bandgap semiconductor, possessing a bandgap of 0.459 eV. The diffusion barrier for calcium ions is determined to be 0.045 eV, while the theoretical capacity of ZrSe₂ for calcium ions is calculated to be 430.489 mAh/g.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208262"},"PeriodicalIF":2.7,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144549681","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of Nd-substitution on structural and electrical properties of bismuth nano-ferrites","authors":"Naveena Gadwala ,&nbsp;Mohd Hashim ,&nbsp;Khalid Mujasam Batoo ,&nbsp;Muhammad Hadi ,&nbsp;Mukhlis M. Ismail ,&nbsp;Shameran Jamal Salih ,&nbsp;T.A. Nhlapo ,&nbsp;Sagar E. Shirsath","doi":"10.1016/j.micrna.2025.208261","DOIUrl":"10.1016/j.micrna.2025.208261","url":null,"abstract":"<div><div>A series of neodymium-substituted bismuth ferrites with the chemical composition Bi_1-xNd_xFeO₃ (x = 0.0 to 0.05, with steps of 0.01) were prepared using the spontaneous combustion technique. The ferrites were characterized by structural and morphological investigations using X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively. The XRD results showed a shift in the diffraction peaks of bismuth ferrite with increasing Nd³⁺ content, a result consistent with the smaller radius of Nd³⁺ ions compared to Bi³⁺ ions. Increasing the neodymium content in the bismuth ferrite resulted in a significant decrease in the lattice parameters. The crystallite size was calculated using two methods: the Scherrer method and the Williamson-Hall (W–H) plot. Because Bi is a volatile material, abundant oxygen vacancies are expected in pure BiFeO3; these vacancies are inhibited by the Nd³⁺ double site. The electrical and dielectric properties of neodymium-substituted bismuth ferrite were studied, showing a pronounced increase in electrical conductivity with increasing temperature. In contrast, the dielectric constant and dielectric loss were limited to frequency effects, with the conduction mechanism and Maxwell-Wagner polarization being used to interpret the results. Neodium substitution in BiFeO₃ resulted in an increased saturation polarization (Ps), the appearance of an elliptical P-E ring, and an increased leakage current. It also significantly improved the photovoltaic properties of BiFeO₃ through the appearance of well-saturated rectangular P-E rings, which exhibit excellent photovoltaic behavior.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208261"},"PeriodicalIF":2.7,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144571215","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhanced switching characteristics of circular-shaped double-gate Si-doped MoS2 TFET for future high-speed applications","authors":"Shabya Gupta,&nbsp;Madhulika Verma,&nbsp;Sachin Agrawal","doi":"10.1016/j.micrna.2025.208226","DOIUrl":"10.1016/j.micrna.2025.208226","url":null,"abstract":"<div><div>This study proposes a novel steep subthreshold swing (SS) circular-shaped double gate silicon-doped molybdenum disulfide (MoS₂) TFET. In the proposed device, initially the Si-doped MoS₂ is used in the channel, which is further extended towards the source side to enhance the SS and <span><math><mrow><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub><mo>/</mo><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>F</mi><mi>F</mi></mrow></msub></mrow></math></span>. The simulation results show that these modifications improve SS and <span><math><mrow><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub><mo>/</mo><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>F</mi><mi>F</mi></mrow></msub></mrow></math></span> by 1.59 and 85.4 times, respectively. Afterward, rectangular gates are replaced by circular gates removing the edge effect and further improving the SS, and <span><math><mrow><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub><mo>/</mo><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>F</mi><mi>F</mi></mrow></msub></mrow></math></span> ratio to 5.8 mV/dec and <span><math><mrow><mn>6</mn><mo>.</mo><mn>6</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>11</mn></mrow></msup></mrow></math></span>, respectively. The overall simulation results illustrate that the proposed device offers a steep SS with significant electrostatic control, improved tunneling efficiency, and low leakage current, which makes it a potential candidate for low-power and high-speed applications. In addition, analytical modeling is also performed to verify the simulated surface potential, and it is found that the analytical results agree well with the simulated ones. Furthermore, the impact of interface trap charges (ITCs) has also been analyzed to confirm the device’s reliability. The results validate that the proposed device is immune to ITCs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208226"},"PeriodicalIF":2.7,"publicationDate":"2025-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144549682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Intersubband optical absorption coefficients and refractive index changes in spherical quantum dots with Coshine Yukawa potential","authors":"Yawen Cai,&nbsp;Xuechao Li,&nbsp;Xiaolong Yan,&nbsp;Xinyu Li,&nbsp;Yueqing Zhang","doi":"10.1016/j.micrna.2025.208260","DOIUrl":"10.1016/j.micrna.2025.208260","url":null,"abstract":"<div><div>In the effective mass framework, we have investigated the optical absorption coefficients and refractive index changes of the spherical quantum dots system with Coshine Yukawa potential. We solve the Schrödinger equation using the Nikiforov-Uvarov method to determine the wave functions and energy levels. Using the iterative method and density matrix theory, we derive analytical expressions for the optical absorption coefficients and refractive index changes. The results show that the resonance peak intensities of the coefficients depend on the potential field tuning parameters and external environmental parameters, and the peaks appear red-shifted or blueshifted as the tunable factor is adjusted. It is noteworthy that the optical response of the system is more sensitive to the structural parameters of the quantum dots than the external environmental parameters.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208260"},"PeriodicalIF":2.7,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144522367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and performance analysis of high-g MEMS switch with improved current handling capability","authors":"Anuj Kumar Vashisth ,&nbsp;Milap Singh ,&nbsp;Isha Yadav ,&nbsp;Rajesh Kumar ,&nbsp;Shankar Dutta","doi":"10.1016/j.micrna.2025.208259","DOIUrl":"10.1016/j.micrna.2025.208259","url":null,"abstract":"<div><div>High performance micro-electro-mechanical system (MEMS) inertial switches (made of either metal or silicon) are in great demand for many niche applications. This paper discusses the design of high-g silicon-on-insulator (SOI) MEMS inertial switch structure with improved current handling capability. The switch structure, comprises of four series-parallel beams supported large proof-mass suspended over a 4 μm deep cavity. The switch structure exhibited in-plane (y-axis) fundamental displacement mode with resonant frequency of 4.2 kHz. The transient response of the silicon MEMS inertial switch structure showed contact (on-state) duration of 230–380 μs due to the 10 % variation in half-sine threshold acceleration value (500 g). The variation in acceleration input pulse width (0.25–1 ms) yielded a large variation in contact duration (2.5–370 μs). In response to two successive half-sine acceleration pulses, variation in contact duration is observed due to the superimposition of residual movement of the proof-mass arising due to first pulse with the response of the second acceleration pulse. The electromechanical pull-in study of the switch structure showed 155 V pull-in voltage. With the variation in silicon resistivity (0.05–0.005 Ω-cm), the on-state resistance of the switch goes down to 3.5 Ω. Corresponding temperature rise (Joule heating) due to the input current of 1A for the entire contact duration is found to be ∼190 °C. The device structure is coated with 1 μm thick gold layer to further reduce the temperature rise (&lt;50 °C) and improved current handling capability. The fabricated switch exhibited an off-state resistance in GΩ, and ≤2.5 Ω on-state resistance.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208259"},"PeriodicalIF":2.7,"publicationDate":"2025-06-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144563036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electronic phase transitions under pressure in thermodynamically stable phases of SrC2: A route toward tunable semiconductor-metal materials","authors":"Rachid Baghdad","doi":"10.1016/j.micrna.2025.208256","DOIUrl":"10.1016/j.micrna.2025.208256","url":null,"abstract":"<div><div>We report a systematic first-principles investigation of the two most stable polymorphs of strontium dicarbide (<span><math><mrow><msub><mtext>SrC</mtext><mn>2</mn></msub></mrow></math></span>): the high-symmetry tetragonal <span><math><mrow><mi>I</mi><mn>4</mn><mo>/</mo><mi>m</mi><mi>m</mi><mi>m</mi></mrow></math></span> phase and the low-symmetry monoclinic <span><math><mrow><mi>C</mi><mn>2</mn><mo>/</mo><mi>c</mi></mrow></math></span> phase. Free-energy calculations indicate a crossover at <span><math><mrow><mo>∼</mo><mn>600</mn><mtext></mtext><mi>K</mi></mrow></math></span>: below this temperature, <span><math><mrow><mi>I</mi><mn>4</mn><mo>/</mo><mi>m</mi><mi>m</mi><mi>m</mi></mrow></math></span> is thermodynamically favored, but above it, vibrational entropy stabilizes the <span><math><mrow><mi>C</mi><mn>2</mn><mo>/</mo><mi>c</mi></mrow></math></span> phase. Electronic-structure and optical-absorption spectra predict indirect band gaps of <span><math><mrow><mn>2.91</mn><mtext></mtext><mi>e</mi><mi>V</mi></mrow></math></span> (<span><math><mrow><mi>I</mi><mn>4</mn><mo>/</mo><mi>m</mi><mi>m</mi><mi>m</mi></mrow></math></span>) and <span><math><mrow><mn>4.13</mn><mtext></mtext><mi>e</mi><mi>V</mi></mrow></math></span> (<span><math><mrow><mi>C</mi><mn>2</mn><mo>/</mo><mi>c</mi></mrow></math></span>). The tetragonal phase exhibits nearly isotropic optical response, while the monoclinic phase shows moderate in-plane anisotropy, suggesting potential for polarization-sensitive photonic and ultraviolet-plasmonic devices. Under hydrostatic pressures up to <span><math><mrow><mn>80</mn><mtext></mtext><mi>G</mi><mi>P</mi><mi>a</mi></mrow></math></span>, both polymorphs display tunable band-gap trends, highlighting opportunities for pressure-modulated optoelectronic applications. Taken together, our results reconcile earlier discrepancies, elucidate the interplay between symmetry, lattice dynamics, and electronic properties in <span><math><mrow><msub><mtext>SrC</mtext><mn>2</mn></msub></mrow></math></span>, and identify the monoclinic <span><math><mrow><mi>C</mi><mn>2</mn><mo>/</mo><mi>c</mi></mrow></math></span> polymorph as a promising platform for anisotropic photonics and UV-plasmonics.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208256"},"PeriodicalIF":2.7,"publicationDate":"2025-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144524274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Efficiency improvement of CIGS solar cells with ZnSe buffer layer and SnS BSF layer","authors":"Ahmed Labadi ,&nbsp;Souad Tobbeche ,&nbsp;Okba Saidani ,&nbsp;Mohammed Bouladame ,&nbsp;Farida Brahimi","doi":"10.1016/j.micrna.2025.208257","DOIUrl":"10.1016/j.micrna.2025.208257","url":null,"abstract":"<div><div>Copper indium gallium selenium (CIGS) solar cells have attracted significant attention, owing to their high efficiency, flexibility, and cost-effectiveness. Their direct bangap and significant optical absorption coefficient of about 10⁵ cm⁻¹ make them particularly promising for photovoltaic applications. This study presents an extensive numerical analysis using SCAPS-1D software, systematically evaluating buffer layers (CdS, In₂S₃, ZnS, ZnSe) and back surface field (BSF) layer materials (PbS, SnS, CuTe₂) to optimise performance. Unlike previous studies focusing on individual materials, our comprehensive approach reveals critical insights into layer interactions through comparative analysis. SnS emerged as the most effective BSF material, achieving an open-circuit voltage of 0.815 V and an efficiency of 26.75 % when paired with ZnSe as the buffer layer. This is due to the BSF's ability to minimise back-surface recombination and enhance carrier collection. This result is also attributed to ZnSe's better band alignment with the CIGS layer, which reduces interface recombination and enhances device performance. Additionally, reducing The CIGS layer thickness from 3 μm to 2.2 μm decreases material usage and costs, with minimal impact on efficiency when ZnSe and SnS are used. This combination ensures high efficiency and reduced toxicity. In the second set of investigations, we optimise the absorber, buffer, and BSF layer thicknesses and the doping concentrations by analysing the short-circuit current density, open-circuit voltage, fill factor, and efficiency of the CIGS solar cell. The results show a high efficiency of 33.70 % for layer thicknesses of ZnSe, CIGS, and SnS of 40 nm, 2.2 μm, and 50 nm, respectively, and doping concentrations of the order of 10¹⁶, 1.65 × 10¹⁹, and 10¹⁶ cm⁻³, respectively. We also investigate the effects of defect densities within the CIGS, ZnSe, and SnS layers, as well as the CIGS/ZnSe and CIGS/SnS interfaces. Defects in both the bulk and at interfaces degrade the performance of the solar cells. Finally, we study the effect of temperature variations on solar cell performance. An increase in temperature contributes to efficiency degradation. This innovative structure, Mo/SnS/CIGS/ZnSe/ZnO, can be used to develop low-cost, sustainable, and eco-friendly high-efficiency CIGS solar cells.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208257"},"PeriodicalIF":2.7,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144514411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Etching-free reverse blocking enhancement-mode AlGaN/GaN HEMTs with CuO MOS drain on the Si substrates","authors":"Yaopeng Zhao ,&nbsp;Jiamao Hao ,&nbsp;Pan Luo ,&nbsp;Ang Li ,&nbsp;Jingtao Luo ,&nbsp;Dong Ren ,&nbsp;Chong Wang ,&nbsp;Kai Liu ,&nbsp;Lei Yang ,&nbsp;Haibing Wen ,&nbsp;Jianyuan Wang ,&nbsp;Cher Ming Tan","doi":"10.1016/j.micrna.2025.208258","DOIUrl":"10.1016/j.micrna.2025.208258","url":null,"abstract":"<div><div>The CuO E-mode reverse blocking MOS drain HEMT (MD-HEMT) and the traditional enhancement-mode(E-mode)ohmic drain HEMT (OD-HEMT) are designed and fabricated on Si substrates, with almost the same threshold voltage of 0.41 V. The MD-HEMT without etching barrier layer achieved through CuO on the thin barrier layer structure has a turn-on voltage of 1.18 V. When <em>V</em>_DS is −100 V, the reverse leakage current of the device is 1.43 × 10⁻¹ mA/mm. The reverse blocking voltage of the device reaches −260 V. When the temperature rises from 25 °C to 150 °C, the on-resistance of the device increases from 10.72 Ω mm to 14.32 Ω mm, and the maximum output current with a gate voltage of 5 V is reduced by 32.78 % from 687.18 mA/mm to 461.94 mA/mm. At the same time, the reverse leakage current of the device will also increase and the reverse blocking voltage will decrease. However, the device maintains significant reverse blocking capability even at 150 °C. The threshold voltage calculation model for CuO thin barrier structure was proposed, which can calculate the p-type concentration in the CuO layer. The calculation model provides reference for the device applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208258"},"PeriodicalIF":2.7,"publicationDate":"2025-06-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144522366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Source-field-plated β-(AlxGa1-x)2O3 MOSFET with breakdown voltage over 7kV","authors":"Hongyu Liu ,&nbsp;Haozhong Wu ,&nbsp;Yuangang Wang ,&nbsp;Yuanjie Lv ,&nbsp;Shida Han ,&nbsp;Tingting Han ,&nbsp;Shaobo Dun ,&nbsp;Hongyu Guo ,&nbsp;Xuanze Zhou ,&nbsp;Guangwei Xu ,&nbsp;Shibing Long ,&nbsp;Zhihong Feng","doi":"10.1016/j.micrna.2025.208255","DOIUrl":"10.1016/j.micrna.2025.208255","url":null,"abstract":"<div><div>In this letter, β-(Al_xGa_1-x)₂O₃ MOSFET with high breakdown voltage are demonstrated. A 150-nm β-(Al_0.14Ga_0.86)₂O₃ epitaxial layer and a 30-nm Ga₂O₃ buffer were grown on Fe-doped semi-insulating β-Ga₂O₃ substrate by metal-organic chemical vapor deposition. The epitaxial thin film exhibits relatively high crystalline quality, with a FWHM of 54 arcsec in the XRD rocking curve and a surface roughness of 2.3 nm. A T-shaped gate and source-field-plated are fabricated to mitigate electric field crowding. The β-(Al_0.14Ga_0.86)₂O₃ MOSFET with source-drain length of 84 μm demonstrates breakdown voltage of 7.2 kV, combined with the specific on-resistance of 3534 mΩ cm², corresponding to power figures of merit of 14.7 MW/cm². The results highlight the potential of β-(Al_xGa_1-x)₂O₃ for high-voltage power electronics.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208255"},"PeriodicalIF":2.7,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144492054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}