Micro and Nanostructures最新文献

{"title":"Optimisation of Ion/Ioff and transconductance of germanium based dual metal gate hetero-dielectric TFET","authors":"D. Gracia ,&nbsp;D. Jackuline Moni ,&nbsp;D. Nirmal","doi":"10.1016/j.micrna.2025.208128","DOIUrl":"10.1016/j.micrna.2025.208128","url":null,"abstract":"<div><div>This simulation study delves in to the exploration of Tunnel Field Effect Transistors (TFET) with Dual Metal Gate (DMG) hetero-dielectric structure incorporating a Germanium channel using simulations study in TCAD. The device efficiency measures such as current in the off-state (I_off), on-state current (I_on), switching efficiency of the current (I_on/I_off) are observed for the proposed device. The metrics are taken in comparison with the traditional DMG hetero-dielectric MOSFET. The recommended device exhibits a 74.8 % reduction in the Subthreshold Slope (SS) compared to the traditional DMG hetero-dielectric MOSFET. An enhanced I_on/I_off ratio of 4.669 × 10⁸for Ge channel TFET is observed over a conventional DMG MOSFET simulated under same environmental conditions. The performance analysis has been carried out for various channel thickness (t_ch), oxide thickness (t_ox), tunneling lengths (L1:L2) and different gate metal work functions. A detailed RF analysis for hetero dielectrics with HfO₂ near the source area and SiO₂ near the drain area is carried out for DMG Hetero Dielectric TFET. It is evident that positioning the low-k dielectric in close proximity to the drain region leads to the suppression of parasitic capacitances such as C_gd and C_gg. This characteristic enhances its suitability as a superior aspirant for nano digital applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"202 ","pages":"Article 208128"},"PeriodicalIF":2.7,"publicationDate":"2025-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143571478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Device and circuit-level assessment of temperature variation on the DC, Analog/RF and linearity performance metrics of III-V TFETs for reliability","authors":"Priyanka Verma,&nbsp;Satyendra Kumar","doi":"10.1016/j.micrna.2025.208114","DOIUrl":"10.1016/j.micrna.2025.208114","url":null,"abstract":"<div><div>This article presents a comprehensive comparative analysis of GaSb/Si Dual Material Stacked Double Gate Hetero Junction TFET (GaSb/Si DMSDG HJTFET) and <span><math><mrow><mi>G</mi><msub><mrow><mi>a</mi></mrow><mrow><mn>0</mn><mo>.</mo><mn>5</mn></mrow></msub></mrow></math></span> <span><math><mrow><mi>A</mi><msub><mrow><mi>s</mi></mrow><mrow><mn>0</mn><mo>.</mo><mn>5</mn></mrow></msub></mrow></math></span>Sb/<span><math><mrow><mi>I</mi><msub><mrow><mi>n</mi></mrow><mrow><mn>0</mn><mo>.</mo><mn>7</mn></mrow></msub></mrow></math></span> <span><math><mrow><mi>G</mi><msub><mrow><mi>a</mi></mrow><mrow><mn>0</mn><mo>.</mo><mn>3</mn></mrow></msub></mrow></math></span>As Ferroelectric Dual Material Stacked Double Gate Hetero Junction TFET (FDMSDG-HJTFET) at device-level as well as circuit-level under the influence of temperature variation for the first time. In this work, the effects of temperature variation in the range of 300 K to 420 K have been accounted. Here, the DC electrical parameters, analog/RF and linearity parameters of both devices have been investigated using Silvaco TCAD tool. Further, the impact of temperature variation on the performance at the circuit level is carried out through a resistive-load inverter with GaSb/Si DMSDG-HJTFET and FDMSDG-HJTFET, evaluating their DC and transient characteristics using HSPICE. The simulation results reveal that the FDMSDG-HJTFET device is more immune to temperature variations, in contrast to GaSb/Si DMSDG-HJTFET. Thus, it can be utilized for low-power, analog/RF and high-temperature applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"202 ","pages":"Article 208114"},"PeriodicalIF":2.7,"publicationDate":"2025-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143580647","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Silicon carbide MOSFETs: A critical review of applications, technological advancements, and future perspectives","authors":"P. Sharmila ,&nbsp;G. Supraja ,&nbsp;D. Haripriya ,&nbsp;C. Sivamani ,&nbsp;A. Lakshmi Narayana","doi":"10.1016/j.micrna.2025.208126","DOIUrl":"10.1016/j.micrna.2025.208126","url":null,"abstract":"<div><div>The emergence of Silicon Carbide (SiC) power MOSFETs represents a revolutionary advancement in power semiconductor technology, fundamentally transforming the landscape of modern power electronics. This comprehensive review systematically analyzes the technological evolution, current state-of-the-art developments, and future trajectories of SiC MOSFET technology, encompassing device physics, structural innovations, manufacturing processes, and application-specific optimizations. Our analysis encompasses a detailed examination of device architectures, progressing from conventional planar structures through advanced trench designs to innovative hybrid configurations, elucidating their respective advantages, limitations, and specific design considerations. The review provides extensive coverage of manufacturing processes, reliability considerations, and optimization strategies that have enabled the achievement of remarkable performance benchmarks, including specific on-resistance values as low as 1.8 mΩ cm² at 1200V ratings. Special attention is devoted to electric vehicle applications, where SiC MOSFETs have demonstrated transformative capabilities through significantly improved system efficiency (&gt;98 %), enhanced switching frequencies (&gt;50 kHz), and superior thermal performance (up to 175 °C). This comprehensive analysis culminates in a detailed assessment of future prospects, examining potential technological trajectories, market dynamics, and emerging application domains. The review serves as a valuable resource for researchers, engineers, and practitioners in power electronics, providing both fundamental understanding and practical insights into the implementation of SiC MOSFET technology across diverse applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"202 ","pages":"Article 208126"},"PeriodicalIF":2.7,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143548726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A 4H–SiC TMOS with triple trenches and high-K dielectric","authors":"Jiafei Yao ,&nbsp;Ziwei Hu ,&nbsp;Yeqin Zhu ,&nbsp;Yuao Liu ,&nbsp;Man Li ,&nbsp;Kemeng Yang ,&nbsp;Jing Chen ,&nbsp;Maolin Zhang ,&nbsp;Jun Zhang ,&nbsp;Yufeng Guo","doi":"10.1016/j.micrna.2025.208125","DOIUrl":"10.1016/j.micrna.2025.208125","url":null,"abstract":"<div><div>A novel 4H–SiC TMOS with triple trenches and high-K dielectric (TTHK-TMOS) is investigated. The main structural features include the triple trenches which are composed of a deep trench filled with high-K dielectric, a gate trench in the high-K dielectric deep trench and a source trench with P-type shielding layer. The high-K dielectric deep trench modulates the electric field and drift doping concentration, improves the breakdown voltage (<em>BV</em>) and reduces the specific on-resistance (<em>R</em>_{<em>on,sp</em>}). The gate trench with high-K dielectric forms the HKMG structure to modulate the channel current and alleviates the electric field concentration effect at the gate trench corner, reduces the highest gate oxide electric field intensity. The source trench together with the P-type shielding layer also relieves the electric field crowd to improve <em>BV</em> and reduce parasitic capacitance. Simulation results demonstrate that the TTHK-TMOS has a <em>BV</em> of 2501 V with a <em>R</em>_{<em>on,sp</em>} of only 1.17 mΩ cm², achieving a <em>FOM</em> of 5354 MW/cm². Compared to the conventional TMOS, TTHK-TMOS has increased its <em>FOM</em> by 226.7 %, lowered the <em>V</em>_<em>TH</em> by 52.6 %, and decreased the high frequency <em>FOM</em> by 23.1 % and 45.3 %, improving both static and dynamic performance.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208125"},"PeriodicalIF":2.7,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143519199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of selenium and carbon content on the electrochemical properties of molybdenum diselenide nanosheets for sensing applications","authors":"Yasin Tangal ,&nbsp;Matej Mičušík ,&nbsp;Sadik Cogal","doi":"10.1016/j.micrna.2025.208117","DOIUrl":"10.1016/j.micrna.2025.208117","url":null,"abstract":"<div><div>Two-dimensional (2D) nanomaterials have been extensively applied in sensing platforms due to their unique properties, including tunable electronic structures, high surface area, and excellent catalytic activity, enabling the selectice and sensitive detection of various biological compounds. However, 2D molybdenum diselenide (MoSe₂) nanostructures have rarely studied in this field compared with its counterparts. In this work, we investigated the electrochemical sensing abilities of different MoSe₂ nanostructures obtained via a facile hydrothermal method. X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) were employed to determine the structures and morphologies of the as-prepared MoSe₂ samples. The analyses revealed that the MoSe₂ materials were obtained in 2D nanosheet structures. The MoSe₂ nanostructures were subsequently coated on glassy carbon electrodes to evaluate their electrochemical properties and performances. Voltammetric techniques were utilized to asses the electrocatalytic activities of different MoSe₂-based electrodes towards three pivotal biological compounds, namely dopamine (DA), ascorbic acid (AA), and uric acid (UA). MoSe₂@active carbon (AC) hybrids were also prepared to enhance the catalytic performance of the MoSe₂ toward the detection of the mentioned analytes. An electrochemical sensor based on the most effective MoSe₂@AC hybrid gave wide linear detection ranges of 1.25–86 μM and 86–468 μM for DA, 50–5128 μM for AA, and 5–1025 μM for UA. The sensor also indicated low detection limits of 0.16 μM for DA, 8.22 μM for AA, and 0.45 μM for UA. Additionally, interference studies were conducted against common compounds present with DA, AA, and UA, demonstrating the high selectivity of the developed sensor.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208117"},"PeriodicalIF":2.7,"publicationDate":"2025-02-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143519334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analysis of ballistic thermal resistance in FinFETs considering Joule heating effects","authors":"Xixin Rao ,&nbsp;Kongzhang Huang ,&nbsp;YiPeng Wu ,&nbsp;Haitao Zhang ,&nbsp;Chengdi Xiao","doi":"10.1016/j.micrna.2025.208113","DOIUrl":"10.1016/j.micrna.2025.208113","url":null,"abstract":"<div><div>The continued miniaturization of integrated circuits has significantly increased power density in heterostructure transistors, creating localized hotspots that degrade device performance. Conventional Fourier's Law (FL) models are limited, particularly when device dimensions approach the phonon mean free path. To address this, we employ the Discrete Ordinates Method (DOM) to solve the non-gray Boltzmann Transport Equation (BTE), enabling precise thermal analysis in FinFETs. Our study underscores the need to incorporate ballistic phonon effects for accurate hotspot temperature predictions under self-heating conditions. Specifically, BTE based temperature estimates are up to 10 % higher than FL based predictions, underscoring the importance of capturing phonon ballistic transport. In heterostructure transistors, substrate-based heat dissipation remains the primary cooling route. Our research demonstrates that diamond substrates can reduce total thermal resistance by approximately 25 % compared to germanium, yet they exhibit higher interfacial thermal resistance relative to silicon carbide and germanium. This work elucidates how substrate thickness, heat-source size, and substrate material critically influence ballistic thermal resistance, thus offering valuable theoretical guidance for optimizing FinFETs design and enhancing thermal management.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208113"},"PeriodicalIF":2.7,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143474308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Inorganic graphenylene: An investigation of the influence of defects, temperature, and size on its mechanical properties","authors":"Yan Zhu ,&nbsp;Li-Cai Zhao","doi":"10.1016/j.micrna.2025.208104","DOIUrl":"10.1016/j.micrna.2025.208104","url":null,"abstract":"<div><div>This study investigates the mechanical properties of armchair and zigzag Inorganic Graphenylene (IGP) nanosheets through molecular dynamics (MD) simulations. We explore the influence of dimensionality, maintaining a constant ratio between the armchair and zigzag lengths of the nanosheet, as well as the effects of increasing the length of the nanosheet in the loading direction. Notably, armchair-oriented IGP nanosheets demonstrate a higher Young's modulus compared to their zigzag counterparts. Stress distribution analyses reveal that both configurations exhibit gradual and soft failure mechanisms under tensile loading. Additionally, the study examines the impact of temperature and vacancy defects on the mechanical properties, finding that elevated temperatures and the presence of defects lead to a reduction in Young's modulus for both orientations, with fractures occurring at shorter strain values.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208104"},"PeriodicalIF":2.7,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143478738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"DFT based study to sense harmful gases (NH3, AsH3, BF3, BCl3) using Scandium Nitride monolayer for sensing device applications","authors":"Pratham Gowtham ,&nbsp;Mandar Jatkar","doi":"10.1016/j.micrna.2025.208100","DOIUrl":"10.1016/j.micrna.2025.208100","url":null,"abstract":"<div><div>In this study, we investigate the structural stability and electronic properties of zigzag Scandium Nitride Nanoribbon (ZScNNR) configurations, with a particular emphasis on their application in detecting toxic gases such as NH₃, AsH₃, BF₃, and BCl₃. Our comprehensive analysis reveals that all studied ZScNNR gas configurations exhibit semiconductor-like behavior except BCl₃, as evidenced by their calculated band structures and density of states (DOS). Among these configurations, the Bare-ZScNNR-6 configuration emerges as the most thermodynamically stable. Furthermore, the configurations involving AsH₃ at width 2 are energetically favorable (-2.57eV). Importantly, the study highlights the remarkable selectivity of AsH₃ on BF₃ i.e 2.5. It shows their potential as effective nanosensors. In particular, the BCl₃ and NH₃ ZScNNR-6 configurations demonstrate an impressive response time of just 7.7 microseconds, establishing them as highly efficient sensor options. These findings underscore the significant potential of ZScNNR-based nanosensors for rapid and selective toxic gas detection, paving the way for their integration into advanced nanoscale sensing devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208100"},"PeriodicalIF":2.7,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143445926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of bifunctional counter electrode materials for quantum dot sensitized solar cells by using rGO/1T-MoS2 nano composite","authors":"Bayisa Batu Kasaye,&nbsp;Megersa Wodajo Shura,&nbsp;Solomon Tiruneh Dibaba","doi":"10.1016/j.micrna.2025.208099","DOIUrl":"10.1016/j.micrna.2025.208099","url":null,"abstract":"<div><div>The metallic molybdenum disulfide (1T-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>) has recently been recognized as a promising counter electrode (CE) material for quantum dot-sensitized solar cells (QDSSCs). However, its poor structural stability has limited its broader application. Herein to address this challenge, diatomic selenium (Se) and nickel (Ni) were doped into MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> to facilitate the phase conversion of 2H-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> to 1T-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>. This doped material was then integrated with reduced graphene oxide (rGO) via a hydrothermal method to develop a bifunctional Ni-Se-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>/rGO CE material for QDSSCs. The nanocomposite was characterized using XRD, SEM, FTIR, UV–vis spectroscopy, and electrochemical techniques, confirming the successful formation of the rGO/1T-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> nanostructure. SEM images revealed Ni-Se-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> loosely packed onto rGO sheets, and the XRD pattern confirmed the presence of the 1T-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>/rGO composite. Electrochemical impedance spectroscopy and cyclic voltammetry demonstrated excellent electrochemical properties, including a low charge transfer resistance (8.52 <span><math><mi>Ω</mi></math></span>) and a high electrochemical surface area. Tauc plot analysis showed a reduced bandgap of 1.8 eV for Ni-Se-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>/rGO compared to 2.0 eV for Ni-Se-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>. These improvements significantly enhance electron lifetime, charge transfer, and charge separation, resulting in superior overall performance of QDSSCs. This study highlights Ni-Se-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>/rGO as a highly efficient and stable photovoltaic CE material for QDSSCs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208099"},"PeriodicalIF":2.7,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143437436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evaluation of random process fluctuation and geometry dependence in nanosheet reconfigurable transistor","authors":"Chao Wang ,&nbsp;Jianing Zhang ,&nbsp;Ziyu Liu ,&nbsp;Xiaojin Li ,&nbsp;Yanling Shi ,&nbsp;Shaoqiang Chen ,&nbsp;Fei Lu ,&nbsp;Xinyu Dong ,&nbsp;Yang Shen ,&nbsp;Yabin Sun","doi":"10.1016/j.micrna.2025.208097","DOIUrl":"10.1016/j.micrna.2025.208097","url":null,"abstract":"<div><div>This study presents the first comprehensive evaluation of the impact of random process fluctuations on the electrical characteristics of nanosheet Reconfigurable FETs (NS-RFETs), and the geometry dependence including nanosheet width (<span><math><msub><mrow><mi>W</mi></mrow><mrow><mi>N</mi><mi>S</mi></mrow></msub></math></span>) and thickness (<span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>N</mi><mi>S</mi></mrow></msub></math></span>) are also investigated. Utilizing MATLAB and 3-D TCAD simulations, this research addresses three key fluctuation sources such as work function variation (WFV), gate edge roughness (GER) and line edge roughness (LER) including line width roughness (LWR) and line height roughness (LHR). It reveals that the variation of <span><math><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub></math></span> is the most influenced among all Figures of Merit (FoMs) and is predominantly affected by LWR and WFV at the control gate, due to the unique Schottky barrier tunneling mechanism in RFETs. WFV is the decisive factor for the variation of <span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>T</mi><mi>H</mi></mrow></msub></math></span> and SS. Generally, smaller geometry parameter leads to deterioration in the variation of <span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>T</mi><mi>H</mi></mrow></msub></math></span> and <span><math><mrow><mi>S</mi><mi>S</mi></mrow></math></span>, and <span><math><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub></math></span> is influenced more significantly. During the shrinkage of <span><math><msub><mrow><mi>W</mi></mrow><mrow><mi>N</mi><mi>S</mi></mrow></msub></math></span>, the impact of LWR becomes more dominant on <span><math><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub></math></span> and when <span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>N</mi><mi>S</mi></mrow></msub></math></span> decreases, WFV becomes more dominant. And LWR and WFV still deserves special attention as the geometry scales down. The results also indicate that enhancing the uniformity of metal grain of metal gate and reducing the RMS of LWR and LHR can mitigate electric performance fluctuations.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208097"},"PeriodicalIF":2.7,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143454928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}