Micro and Nanostructures最新文献

{"title":"Effects of magnetic field and structural parameters on multi-photon absorption spectra in Morse quantum wells with electron–phonon interactions","authors":"Tran Ky Vi ,&nbsp;Nguyen Anh Tuan ,&nbsp;Le Nguyen Dinh Khoi ,&nbsp;Nguyen Quang Hoc ,&nbsp;Anh-Tuan Tran","doi":"10.1016/j.micrna.2024.208062","DOIUrl":"10.1016/j.micrna.2024.208062","url":null,"abstract":"<div><div>We present a systematic theoretical study of the multi-photon nonlinear optical absorption properties of a <span><math><mrow><mtext>GaAs/A</mtext><msub><mrow><mtext>l</mtext></mrow><mrow><mi>x</mi></mrow></msub><mtext>G</mtext><msub><mrow><mtext>a</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mtext>As</mtext></mrow></math></span> based quantum well (QW) structure with Morse confinement potential under the influence of a magnetic field. Based on the stationary states due to the electron confinement in Morse QWs and the Landau levels obtained by solving the Schrodinger equation in the effective mass approximation, we have developed calculations for the optical absorption power with MPA using second-order perturbation theory. Our model accounts for electron–phonon interactions and considers both optical and acoustic phonon mechanisms in the MPA process. Our findings show that the one-photon absorption (1PA) peaks are larger and appear to the right of the two-photon absorption (2PA) peaks, whereas 2PA peaks are larger and occur to the right of three-photon absorption (3PA) peaks. The resonance peak positions follow the magneto-phonon resonance condition and are temperature-independent. Increasing the magnetic field and aluminum concentration induces a blue shift in the absorption spectra, whereas increasing the QW width leads to a red shift. Variations in magnetic field, aluminum concentration, and QW width also affect the peak intensities and full-width at half maximum (FWHM), with increasing values of the former two enhancing the FWHM, while expanding the QW width reduces it. Thermal excitations increase peak intensity without shifting their positions. Our study highlights the significance of nonlinear absorption processes (2PA, 3PA) in understanding optical absorption, despite their smaller FWHM compared to linear absorption (1PA). Overall, the Morse QW model demonstrates promising magneto-optical properties, making it a strong candidate for future optoelectronic device applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208062"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of hindrance and trap impurities on the sensitivity measurement of N-Pocket TFET based biosensor","authors":"Shreyas Tiwari ,&nbsp;Rajesh Saha ,&nbsp;Tarun Varma","doi":"10.1016/j.micrna.2024.208067","DOIUrl":"10.1016/j.micrna.2024.208067","url":null,"abstract":"<div><div>This work concentrated on the sensitivity assessment of the N-pocket TFET biosensor accounting for steric hindrance and interface trap effects. In this case, high-k gate oxide is positioned above the N+ pocket of the source regime to add a further tunneling component during the conduction mechanism. Additionally, the influence of interface charges and steric hindrance effects are assessed through the observation of the drain current (I_D), surface electro static potential (ѱ), current ratio (I_ON/I_OFF) and current sensitivity (S_ION). Further investigation is done by changing the length of cavity (L_C), thickness of cavity (T_C), drain voltage (V_DS), and position of biomolecules with respect to the sensing terminal. The effect of biomolecules on noise assessment parameters have also been studied on taking into consideration of non-idealistic effects. On considering steric hindrance and interface trap charges effects, streptavidin biomolecules report an error in sensitivity (67 %)_{No Trap} and (188.6 %)_Trap, respectively. Finally, the steric error estimation parameter of the supplied TFET biosensor is compared to the sensitivity of other FET-based biosensors described in publications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208067"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gate misalignment effect on electrical characteristics and comparison of Analog/RF performance parameters of triple metal dual gate vertical TFET","authors":"Rohit R. Kumbhar,&nbsp;Rajesh Agarwal","doi":"10.1016/j.micrna.2024.208048","DOIUrl":"10.1016/j.micrna.2024.208048","url":null,"abstract":"<div><div>During the fabrication of a double gate TFET structure, there is a high chance of gate misalignment, which may affect the sensitivity of the sensors. In this paper, we investigated various effects of gate misalignment and switching characteristics of charge plasma-based triple metal double gate vertical TFET on electrical characteristics. We observed effects on analog/RF parameters on the proposed structure, such as transconductance (g_m), output conductance (g_ds), intrinsic gain (A_VO), total gate capacitance (C_GG), and cut-off frequency (f_T), along with threshold voltage (V_Th) and sub-threshold slope (SS). The work focuses on the investigation of these parameters in three scenarios of gate misalignment: towards the drain, towards the source, and towards the drain and source with different probable percentages of misalignment. The results are analyzed by considering SiO₂ and HfO₂ as gate oxide materials.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208048"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigating the optical properties of cylindrical core/shell/shell quantum dots (CCSSQDs) with and without hydrogenic impurity: Role of spatial factors, magnetic field, dielectric matrices and Rashba parameter","authors":"A. Naifar ,&nbsp;K. Hasanirokh","doi":"10.1016/j.micrna.2024.208049","DOIUrl":"10.1016/j.micrna.2024.208049","url":null,"abstract":"<div><div>Through this theoretical investigation, we highlight the precise role of various internal (core radius, height and first shell thickness) and external factors (impurity, magnetic field, dielectric environment and Rashba spin orbit interaction) on AlGaAs/GaAs/AlGaAs CCSSQD and their influence on the linear and nonlinear properties. The binding energy of a donor impurity under the influence of an applied magnetic field is computed using a variational method employing a three-parameter trial wave function and the effective mass approximation. The major outcomes of our quantitative research demonstrate a strong dependence between the core radius and first shell thickness with respect to the binding energy. Magnetic field, dielectric environment and Rashba parameter change drastically the impurity state and then modifies the optical characteristics in terms of intensity and peaks locations. By appropriately manipulating internal and external variables we can not only regulate the properties of the donor impurity but also guide developers in the creation of novel optoelectronic devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208049"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"4H–SiC double trench MOSFET with Inverted-T groove and integrated Schottky barrier diode","authors":"Yue Zhang ,&nbsp;Song Bai ,&nbsp;Guran Chen ,&nbsp;Teng Zhang ,&nbsp;Runhua Huang ,&nbsp;Shiyan Li ,&nbsp;Yong Yang","doi":"10.1016/j.micrna.2024.208052","DOIUrl":"10.1016/j.micrna.2024.208052","url":null,"abstract":"<div><div>In this letter, we propose an improved 4H–SiC double trench MOSFET with Inverted-T groove and integrated Schottky barrier diode (ITSBD-MOS). The device features an Inverted-T groove beneath the gate electrode and the integrated SBD locates on the bottom of source trench. Numerical simulations have been completed to study the proposed device. The maximum electric field in gate oxide of ITSBD-MOS is suppressed to below 3 MV/cm, while the turn-on voltage in reverse conduction state is lowered to 1.23 V. Besides, due to the introduction of Inverted-T groove, the gate-to-drain charge of the ITSBD-MOS is significantly reduced while the short-circuit capability is obviously improved. The calculated high-frequency figure of merit (HF-FOM = <em>R</em>_on,sp × <em>Q</em>_gd) of ITSBD-MOS is tremendously decreased compared with that of DT-MOS, which suggests that ITSBD-MOS is a promising candidate for external-diode free power electronics applications and high-frequency operations.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208052"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High performance of AlGaN/GaN HEMT with AlN cap layer","authors":"Xin Luo,&nbsp;Peng Cui,&nbsp;Tieying Zhang,&nbsp;Xinkun Yan,&nbsp;Siheng Chen,&nbsp;Liu Wang,&nbsp;Jiacheng Dai,&nbsp;Handoko Linewih,&nbsp;Zhaojun Lin,&nbsp;Xiangang Xu,&nbsp;Jisheng Han","doi":"10.1016/j.micrna.2024.208054","DOIUrl":"10.1016/j.micrna.2024.208054","url":null,"abstract":"<div><div>In this study, GaN high electron mobility transistors (HEMTs) with a 2 nm AlN cap layer (AC-HEMTs) were fabricated on SiC substrate. The AlN/AlGaN/AlN/GaN heterostructures feature smooth surface and low sheet resistivity. Compared to GaN HEMTs with a 2 nm GaN cap layer (GC-HEMTs), higher two-dimensional electron gas (2DEG) density was observed in AC-HEMTs due to the passivation and enhanced polarization effects from AlN cap layer. The introduction of AlN cap layer results in fewer additional polarization charge and higher 2DEG density, both of which weaken polarization Coulomb field (PCF) scattering intensity. Thus, AC-HEMTs exhibit higher electron mobility and better DC electrical characteristics including higher drain current, lower on-resistance, larger on/off current ratio and higher transconductance. Moreover, AC-HEMTs show prominent improvement of breakdown voltage from 625 V (GaN cap) to 855 V (AlN cap).</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208054"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of interface, border and bulk traps of Al2O3/β-Ga2O3 MOS capacitors via O2 plasma treatment","authors":"Song Du,&nbsp;Yuxiang Lin,&nbsp;Hao Xu,&nbsp;Hao Long","doi":"10.1016/j.micrna.2024.208058","DOIUrl":"10.1016/j.micrna.2024.208058","url":null,"abstract":"<div><div>While Gallium Oxide (Ga₂O₃) metal-oxide-semiconductor field-effect transistors (MOSFETs) hold great potential for high power applications, effective control of the MOS interface remains a subject of ongoing investigation. Previous studies always focused on interface traps, while overlooking the bulk and broader traps in dielectric layer. In this study, the effects of oxygen plasma treatment on the interface, border and bulk traps of Al₂O₃/β-Ga₂O₃ MOS capacitors were systematically investigated through high/low frequency C–V, hysteresis C–V, and forward-bias stress tests. The results showed that devices treated with 50 W plasma power for 1 min effectively passivated the interface dangling bonds and also improved the crystalline quality of Al₂O₃ dielectrics, exhibiting the lowest interface, border and bulk traps density. In contrast, excess plasma density or total treatment energy introduced etching defects, deteriorating the interface and dielectrics’ quality. The study demonstrates that appropriate oxygen plasma pretreatment provided an effective solution for the future application of high-performance β-Ga₂O₃ MOS devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208058"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance investigation of neoteric Pt/Pd Junctionless gas tube FET(JL-GT-FET) as a Hydrogen(H2) gas sensor for industrial applications-analytical model","authors":"Anubha Goel ,&nbsp;Sonam Rewari ,&nbsp;R.S. Gupta","doi":"10.1016/j.micrna.2024.208050","DOIUrl":"10.1016/j.micrna.2024.208050","url":null,"abstract":"<div><div>In this manuscript, an analytical model has been proposed for Junctionless (JL) Nanotube Field Effect Transistor (FET) as a hydrogen sensor, being called as a Junctionless Gas Tube FET (JL-GT-FET). Palladium (Pd) and platinum (Pt) has been exploited as the catalytic metal gate and are compared for their performance metrics. The proposed sensor, works on the principle that the pressure on the catalytic metal gate will be altered by the change in the concentration of gas molecules which in turn modulates the work-function of the metal gate. Thus, it can rightly be inferred that the change in the work-function of the metal is being used to detect the presence of hydrogen gas molecules. The performance parameters being analyzed are threshold voltage, electric field, surface potential, drain current, Transconductance, output conductance and sensitivity. Here, in this manuscript, an analytical model has also been developed for Junctionless Gas Tube FET (JL-GT-FET) as a hydrogen sensor. The Junctionless Gas FET based sensor has been compared with Nanowire FET under similar pressure and catalytic conditions. It has been established that the Junctionless Gas Tube FET exhibits much higher efficiency in sensing the pressure variations. Also, it has been established that the modeling so obtained by solving the 2-D Poisson equation with appropriate boundary conditions for the Junctionless Gas Tube FET are much in coherence with the results so obtained by simulating the device structure on the Atlas 3-D device simulator.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208050"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of annealing on the thermal quenching of photoluminescence in GaAsBi/GaAs quantum dots with bimodal inhomogeneous broadening","authors":"S. Zouaghi ,&nbsp;A. Ben Abdelwahed ,&nbsp;H. Fitouri ,&nbsp;W.S. Alharbi ,&nbsp;A. Rebey","doi":"10.1016/j.micrna.2024.208039","DOIUrl":"10.1016/j.micrna.2024.208039","url":null,"abstract":"<div><div>GaAsBi/GaAs quantum dots (QDs) samples with a bimodal size distribution grown by atmospheric pressure metalorganic vapor phase epitaxy (AP-MOVPE) on <em>p</em>-GaAs substrates and annealed at different temperatures were investigated by photoluminescence (PL) measurements. The analyses of the Arrhenius fit of the integrated PL intensity show two types of non-radiative recombination processes, describing the strong thermal quenching of PL. The thermal quenching of the as-grown sample is clearly quicker compared to the annealed QD samples. It is attributed to a higher density of non-radiative Bi complexes and native defects related to GaAs host lattice. The activation energy value for the large QD increases in the annealed samples suggests a modification in the depth of the confining potential. The temperature dependence of the PL peak energy of small QD presents an S-shape variation, while the PL line width follows a non-monotonic form. These behaviors have been progressively reduced in the annealed samples. These experimental results have been interpreted in the context of the thermally activated carrier transfer process between different QDs. Thus, annealing reduces the localized state density and therefore improves the optical quality of GaAsBi/GaAs QDs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208039"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Localized surface plasmon enhanced the photoresponse performance of Ga2O3 ultraviolet photodetectors","authors":"Shuang Zhang ,&nbsp;Guoqing Zhang ,&nbsp;Hui Wu ,&nbsp;Zhen Cui","doi":"10.1016/j.micrna.2024.208063","DOIUrl":"10.1016/j.micrna.2024.208063","url":null,"abstract":"<div><div>The finite-difference time-domain method is employed in this study to analyze the influence of structural parameters on ultraviolet light absorption, and computer-aided design techniques are utilized to simulate the relevant characteristics of day-blind ultraviolet photodetectors. Two absorption structures are designed: metal nanoparticles-Ga₂O₃ and metal nanoparticles-Ga₂O₃-metal layers. The second structure achieves an absorption peak intensity of over 0.95 in the ultraviolet region. By investigating the electric field at the resonance peak, localized surface plasmon resonance is found to occur at the interface between the nanoparticles and Ga₂O₃, significantly enhancing the absorption of photon energy by the nanoparticles, which benefits the design of ultraviolet photodetectors. Furthermore, a gold nanoparticle Ga₂O₃ photodetector is designed, and it is discovered that the responsivity and external quantum efficiency of the gold nanoparticle Ga₂O₃ photodetector can reach up to 4.13 A/W and 2276 %, respectively, with the gold nanoparticles and gold absorption layer significantly improving the device's optoelectronic performance. The effect of Ga₂O₃ thickness on optoelectronic performance is also explored, showing that the detector's performance can be enhanced by adjusting the Ga₂O₃ thickness.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208063"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}