Tailoring of the transfer characteristics of nanowire-based GAA-FETs through the channel defects and its effect on the energy-current spectrum

IF 3 Q2 PHYSICS, CONDENSED MATTER
Aruna Gupta, Niladri Sarkar
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引用次数: 0

Abstract

Studies are performed to investigate the effect of channel defects on the transfer and output characteristics of Nanowire-GAA-FETs. It is observed that the transfer characteristics can be tuned by invoking defect-induced scattering potential in the nanowire channel. Here, the channel scattering potentials chosen are step-shaped and pulse-shaped. The effect of such potentials on the energy-current spectrum of the nanowire device is also studied. It is observed that the normalized energy-current spectrum shrinks due to scattering potential. This results in the early triggering of the device saturation. Also, it is observed that the energy-current spectrum gets enhanced as the gate voltage of the device is increased. This signifies the role of channel currents of different energies in the transport mechanism. Here, the effect of channel defects on device saturation current is corroborated with the corresponding impact on the energy-current spectrum of the nanowire device. This work explains the implication of the modified energy-current spectrum under defect-induced scattering potentials and its effect on the device transfer characteristics. Hence, this idea can be extended to tailor the transfer characteristics through intentionally and unintentionally invoked channel defects on low-dimensional FETs. Also, we have studied the effect of defects on the transconductance, threshold voltage and the subthreshold swing of nanowires FETs. Here, we compared the simulated results with the experimental results of a real GAA-based biosensor.
利用沟道缺陷调整纳米线gaa - fet的转移特性及其对能流谱的影响
研究了沟道缺陷对纳米线- gaa场效应管转移和输出特性的影响。通过在纳米线沟道中引入缺陷引起的散射势,可以调节纳米线的转移特性。在这里,通道散射电位选择为阶梯状和脉冲状。研究了这些电位对纳米线器件能流谱的影响。观察到归一化能流谱由于散射势的影响而收缩。这导致设备饱和的提前触发。此外,可以观察到,能量电流谱随着器件栅极电压的增加而增强。这表明了不同能量的通道电流在输运机制中的作用。在这里,通道缺陷对器件饱和电流的影响与对纳米线器件能量电流谱的相应影响得到了证实。本文解释了缺陷诱导散射电位下修正能流谱的含义及其对器件转移特性的影响。因此,这个想法可以扩展到通过在低维场效应管上有意或无意地调用沟道缺陷来定制转移特性。此外,我们还研究了缺陷对纳米线场效应管跨导、阈值电压和亚阈值摆幅的影响。在此,我们将模拟结果与实际gaa生物传感器的实验结果进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
6.50
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0.00%
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