Jatismar Saha , Manosh Protim Gogoi , Shreyas Tiwari , Bijit Choudhuri , Rajesh Saha
{"title":"研究重离子辐射对n型阶梯隧穿通道TFET的影响","authors":"Jatismar Saha , Manosh Protim Gogoi , Shreyas Tiwari , Bijit Choudhuri , Rajesh Saha","doi":"10.1016/j.micrna.2025.208269","DOIUrl":null,"url":null,"abstract":"<div><div>This study investigates the impact of heavy-ion radiation on Step Tunneling Path (STP) TFET, focusing on charge deposition, device stability, and performance in radiation-intensive environments. Using Sentaurus TCAD simulations, the effects of heavy-ion generation are analysed at specific locations within the device 50, 100, 150, 200, and 230 nm from the source region. The analysis reveals that at linear energy transfer (LET) = 50 MeV-cm<sup>2</sup>/mg, the drain current (I<sub>D</sub>) reaches approximately 28,000 μA, demonstrating a significant transient response due to increased charge deposition. The study also examines the effect of varying ion incidence angles (0°, 30°, 45°, 60°, and 90°) at constant LET of 20 MeV-cm<sup>2</sup>/mg. Results indicate that at 0° incidence angle, the drain current peaks at approximately 200,000 μA, emphasizing the critical role of impact geometry in radiation-induced device degradation. The findings confirm that heavy ions deposit more charge along their trajectory compared to alpha particles, leading to higher ionization densities and stronger transient effects. This research provides crucial insights into the radiation resilience of STP-TFETs, making them viable candidates for high-energy and space applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208269"},"PeriodicalIF":3.0000,"publicationDate":"2025-07-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigating the effects of heavy-ion radiation on n-type Step Tunnelling Path TFET\",\"authors\":\"Jatismar Saha , Manosh Protim Gogoi , Shreyas Tiwari , Bijit Choudhuri , Rajesh Saha\",\"doi\":\"10.1016/j.micrna.2025.208269\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This study investigates the impact of heavy-ion radiation on Step Tunneling Path (STP) TFET, focusing on charge deposition, device stability, and performance in radiation-intensive environments. Using Sentaurus TCAD simulations, the effects of heavy-ion generation are analysed at specific locations within the device 50, 100, 150, 200, and 230 nm from the source region. The analysis reveals that at linear energy transfer (LET) = 50 MeV-cm<sup>2</sup>/mg, the drain current (I<sub>D</sub>) reaches approximately 28,000 μA, demonstrating a significant transient response due to increased charge deposition. The study also examines the effect of varying ion incidence angles (0°, 30°, 45°, 60°, and 90°) at constant LET of 20 MeV-cm<sup>2</sup>/mg. Results indicate that at 0° incidence angle, the drain current peaks at approximately 200,000 μA, emphasizing the critical role of impact geometry in radiation-induced device degradation. The findings confirm that heavy ions deposit more charge along their trajectory compared to alpha particles, leading to higher ionization densities and stronger transient effects. This research provides crucial insights into the radiation resilience of STP-TFETs, making them viable candidates for high-energy and space applications.</div></div>\",\"PeriodicalId\":100923,\"journal\":{\"name\":\"Micro and Nanostructures\",\"volume\":\"207 \",\"pages\":\"Article 208269\"},\"PeriodicalIF\":3.0000,\"publicationDate\":\"2025-07-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nanostructures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2773012325001980\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012325001980","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Investigating the effects of heavy-ion radiation on n-type Step Tunnelling Path TFET
This study investigates the impact of heavy-ion radiation on Step Tunneling Path (STP) TFET, focusing on charge deposition, device stability, and performance in radiation-intensive environments. Using Sentaurus TCAD simulations, the effects of heavy-ion generation are analysed at specific locations within the device 50, 100, 150, 200, and 230 nm from the source region. The analysis reveals that at linear energy transfer (LET) = 50 MeV-cm2/mg, the drain current (ID) reaches approximately 28,000 μA, demonstrating a significant transient response due to increased charge deposition. The study also examines the effect of varying ion incidence angles (0°, 30°, 45°, 60°, and 90°) at constant LET of 20 MeV-cm2/mg. Results indicate that at 0° incidence angle, the drain current peaks at approximately 200,000 μA, emphasizing the critical role of impact geometry in radiation-induced device degradation. The findings confirm that heavy ions deposit more charge along their trajectory compared to alpha particles, leading to higher ionization densities and stronger transient effects. This research provides crucial insights into the radiation resilience of STP-TFETs, making them viable candidates for high-energy and space applications.