Micro and Nanostructures最新文献_第7页

Density functional insight on transport phenomenon in halogenated germanene and silicene nanoribbons under tensile stress for nanoscale interconnects 卤化锗烯和硅烯纳米带在拉伸应力下传输现象的密度泛函研究

IF 3

Micro and Nanostructures Pub Date : 2025-08-11 DOI: 10.1016/j.micrna.2025.208300

Sonal Agrawal , Anurag Srivastava , Gaurav Kaushal

{"title":"Density functional insight on transport phenomenon in halogenated germanene and silicene nanoribbons under tensile stress for nanoscale interconnects","authors":"Sonal Agrawal , Anurag Srivastava , Gaurav Kaushal","doi":"10.1016/j.micrna.2025.208300","DOIUrl":"10.1016/j.micrna.2025.208300","url":null,"abstract":"<div><div>The impact of halogen passivation in Zigzag silicene nanoribbons (ZSiNRs) and Germanene Nanoribbons (ZGeNRs) have been investigated, in terms of their stability electronic properties, transport properties and dynamical parameters, using the density-functional theory. Further, the impact of tensile stress on the transport properties of NanoRibbons (NRs) has also been studied for flexible or real-time electronic devices application. The ZSiNRs and ZGeNRs have been subjected to halogen (X = F, Cl, Br, I) passivation at the edges. The stability performance of the systems has been evaluated by the assessment of binding energy. The binding energy calculations suggest that Fluorine (F) passivated ZSiNR and ZGeNRs are relatively more stable than the other halogen passivated counterparts. After subjecting these NRs to tensile stress, stability slightly decreases. From the electronic bandstructure and density of state profile, it is observed that the metallic character of the ZSiNR and ZGeNR enhanced due to the contribution of halogen atoms at the Fermi level, evidenced by the increase in density of states at the Fermi level. To further examine the increased metallicity, the transport properties, i.e., I–V Characteristics and transmission pathways, have also been analysed and observed that the fluorine (F) passivated ZGeNRs have higher conductance with monotonically increasing I–V characteristics, in Ground as well maximum tensile stress (MTS) state, in comparison to other counterparts. The dynamical parameter calculation shows that F passivated ZSiNRs and ZGeNRs have significantly lower quantum capacitance and kinetic inductance, which defends their application as interconnects in the electronic industry.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208300"},"PeriodicalIF":3.0,"publicationDate":"2025-08-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144867320","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of Poly(1-vinylpyrrolidone-co-vinylacetate) addition on CsPbI2Br perovskite films and perovskite solar cells 聚（1-乙烯基吡咯烷酮-醋酸乙烯酯）加成对CsPbI2Br钙钛矿薄膜和钙钛矿太阳能电池的影响

IF 3

Micro and Nanostructures Pub Date : 2025-08-09 DOI: 10.1016/j.micrna.2025.208298

Jingsi Cao, Min Zhong, Yanyu Jiang, Hongliang Ge

{"title":"Effects of Poly(1-vinylpyrrolidone-co-vinylacetate) addition on CsPbI2Br perovskite films and perovskite solar cells","authors":"Jingsi Cao, Min Zhong, Yanyu Jiang, Hongliang Ge","doi":"10.1016/j.micrna.2025.208298","DOIUrl":"10.1016/j.micrna.2025.208298","url":null,"abstract":"<div><div>The all-inorganic CsPbI<sub>2</sub>Br perovskite solar cells(PSCs) with excellent thermal stability suffers greatly from poor room temperature phase stability which results in device performance deterioration. In this paper, we design vinylpyrrolidone-vinyl acetate copolymer (Poly(VP-VAc)) additive with an ordered main chain structure which provides ordered binding sites for the nucleation and growth of perovskite. Poly(VP-VAc) with alternated C<img>O in ester groups and C<img>O in ketone groups was introduced to the CsPbI<sub>2</sub>Br precursor solution to coordinate with Pb<sup>2+</sup>/Cs<sup>+</sup> ions. The strong interaction between Poly(VP-VAc) and CsPbI<sub>2</sub>Br and the ordered hydrophobic main chain structure of Poly(VP-VAc) not only suppresses the transition from the optically active black phase (α phase) to the non-optically active yellow phase (δ phase), but also passivates defects, regulates the energy level of perovskite, promotes carrier transport, and reduces non radiative recombination losses. As a result, the unsealed CsPbI<sub>2</sub>Br device with 4 wt% of Poly(VP-VAc) added remained 75 % of the initial efficiency under 48 % relative humidity for 200 h. Meanwhile, the efficiency of CsPbI<sub>2</sub>Br PSC with 4 wt% of Poly(VP-VAc) added increased by 47.3 % compared to that of CsPbI<sub>2</sub>Br PSCs (RH 48 %, 20 °C). The rational design of novel Poly(VP-VAc) added CsPbI<sub>2</sub>Br perovskite film offers a fresh approach to improving the stability and efficiency of inorganic perovskite-based solar cells under ambient condition.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208298"},"PeriodicalIF":3.0,"publicationDate":"2025-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144826833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Adjustable broadband terahertz metamaterial absorber with a single layer graphene structure made base on the principle of strong electric field coupling 基于强电场耦合原理制成的单层石墨烯结构可调宽带太赫兹超材料吸收体

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Micro and Nanostructures Pub Date : 2025-08-09 DOI: 10.1016/j.micrna.2025.208297

Zihang Wei , Yingting Yi , Hua Yang , Zao Yi , Yougen Yi

引用次数: 0

Single nanowire resistive gas sensors: A review 单纳米线电阻式气体传感器：综述

IF 3

Micro and Nanostructures Pub Date : 2025-08-08 DOI: 10.1016/j.micrna.2025.208299

M. Hjiri , Fatemah M. Barakat , G. Neri

引用次数: 0

Exploring progress in β-(AlxGa1-x)2O3/β-Ga2O3 heterojunction technology: A critical analysis of emerging power electronics and high-frequency applications 探索β-(AlxGa1-x)2O3/β- ga2o3异质结技术的进展：新兴电力电子和高频应用的关键分析

IF 3

Micro and Nanostructures Pub Date : 2025-08-08 DOI: 10.1016/j.micrna.2025.208289

R. Karthiga , S. Ravi , B.M.R. Manasa , C. Sivamani , N. Vinodhkumar

{"title":"Exploring progress in β-(AlxGa1-x)2O3/β-Ga2O3 heterojunction technology: A critical analysis of emerging power electronics and high-frequency applications","authors":"R. Karthiga , S. Ravi , B.M.R. Manasa , C. Sivamani , N. Vinodhkumar","doi":"10.1016/j.micrna.2025.208289","DOIUrl":"10.1016/j.micrna.2025.208289","url":null,"abstract":"<div><div>The ongoing development of β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> heterojunction systems demonstrates significant potential for advanced power management and radio frequency applications. These compounds benefit from gallium oxide’s remarkably wide energy bandgap and substantial electric field tolerance, while simultaneously overcoming traditional constraints through strategic interface design. The engineered boundaries between materials facilitate enhanced electron mobility through quantum confinement effects, creating pathways for improved performance. Simultaneously, the deliberate manipulation of electronic band structures allows researchers to customize operational parameters with unprecedented precision, opening new possibilities for specialized electronic components. This review examines fundamental properties, epitaxial growth challenges, device architectures, and performance metrics, highlighting breakthroughs including breakdown fields approaching 5.5 MV/cm, breakdown voltages exceeding 7 kV, and RF cutoff frequencies reaching 32 GHz. Thermal management solutions like AlN capping layers have demonstrated temperature reductions up to 40 %, addressing a key limitation of these materials. The review also analyzes dynamic performance considerations and explores future research directions, including novel device concepts, hybrid material integration, and commercialization pathways that are essential for realizing the full potential of these promising heterojunction technologies.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208289"},"PeriodicalIF":3.0,"publicationDate":"2025-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144826836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Constructing multishelled ZnO/ZnCo2O4 hollow polyhedrons as a sensing material for efficient acetone detection 构建多壳ZnO/ZnCo2O4中空多面体作为丙酮检测的传感材料

IF 3

Micro and Nanostructures Pub Date : 2025-08-06 DOI: 10.1016/j.micrna.2025.208290

Yonghui Zhang , Xinyi Yuan , Duojie Gengzang , Liwei Liu , Guoheng Zhang , Wanjun Chen , Peiyu Wang , Qiong Chen

{"title":"Constructing multishelled ZnO/ZnCo2O4 hollow polyhedrons as a sensing material for efficient acetone detection","authors":"Yonghui Zhang , Xinyi Yuan , Duojie Gengzang , Liwei Liu , Guoheng Zhang , Wanjun Chen , Peiyu Wang , Qiong Chen","doi":"10.1016/j.micrna.2025.208290","DOIUrl":"10.1016/j.micrna.2025.208290","url":null,"abstract":"<div><div>The multishelled ZnO/ZnCo<sub>2</sub>O<sub>4</sub> hollow polyhedrons were synthesized by metal organic frameworks (MOF) derived method. Through modulating the molar ratio of Zn/Co in ZnCo-Zeolitic Imidazolate Framework (ZIF) precursor, the structure and the proportion of oxygen vacancies in ZnO/ZnCo<sub>2</sub>O<sub>4</sub> composites were adjusted. When evaluated as sensing material under 23 % RH, the ZnO/ZnCo<sub>2</sub>O<sub>4</sub> (Zn/Co = 2:1) based sensor possessed improved comprehensive acetone sensing performance than other counterparts, including lower operating temperature (180 °C), relatively higher sensitivity (13.42), shorter response/recovery time (15/18 s), even under 88 % RH, the response to 100 ppm acetone was about 65 % of the value under 23 % RH, the response/recovery time was 29/34 s, indicating the sensor has the potential of humidity resistance. The underlying enhanced sensing mechanism was ascribed to the following factor: the heterojunction created at the ZnO and ZnCo<sub>2</sub>O<sub>4</sub> interface, the multishelled hollow polyhedral structure and the abundant oxygen vacancies. This work verified that through rational designing the MOF precursors, the structure, component and surface defects of MOF-derived metal oxide composite sensing material can be optimized simultaneously.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208290"},"PeriodicalIF":3.0,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144826909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A radiation hardened asymmetric L-shaped Schottky contact Wavy–SOI–FinFET 辐射硬化的非对称l形肖特基接触波-土- finfet

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Micro and Nanostructures Pub Date : 2025-08-06 DOI: 10.1016/j.micrna.2025.208282

Congyang Huang, Jianjun Song, Weifeng Liu, Dong Zhang

引用次数: 0

Investigation of electrolyte gated negative capacitance vertical TFET pH sensor based on biomolecule position 基于生物分子位置的电解质门控负电容垂直TFET pH传感器研究

IF 3

Micro and Nanostructures Pub Date : 2025-08-06 DOI: 10.1016/j.micrna.2025.208286

Nagalakshmi Yarlagadda , Girish Wadhwa , Pawandeep Kaur , Anchal Thakur , Sruti Suvadarsini Singh , Prashant Mani

{"title":"Investigation of electrolyte gated negative capacitance vertical TFET pH sensor based on biomolecule position","authors":"Nagalakshmi Yarlagadda , Girish Wadhwa , Pawandeep Kaur , Anchal Thakur , Sruti Suvadarsini Singh , Prashant Mani","doi":"10.1016/j.micrna.2025.208286","DOIUrl":"10.1016/j.micrna.2025.208286","url":null,"abstract":"<div><div>In this study, a step gate Negative capacitance Vertical TFET (SG NC VTFET) has been proposed and investigated for its improved performance. The ferroelectric material has been added to the gate stack for the inclusion of negative capacitance. The position of biomolecules and their impact on the sensitivity of the SG NC VTFET have been examined. The position of biomolecules changes due to the diffusion process inside the cavity. The ferroelectric material HFO2 has been modelled to be considered in the simulation of the SG NC VTFET pH sensor. The impact of negative capacitance and the position of biomolecules improve the current (S<sub>ID</sub>) and voltage sensitivity (S<sub>V</sub>) of the SG NC VTFET pH sensor. The improved voltage sensitivity (S<sub>V</sub>) is approximately equal to 753 mV/pH for <span><math><mrow><msub><mi>T</mi><mrow><mi>b</mi><mi>i</mi><mi>o</mi></mrow></msub></mrow></math></span> = 8 nm, which is ten times more than the Nernstian limit (59.2 mV/pH), and S<sub>ID</sub> has been enhanced by approximately half a decade per pH variation.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208286"},"PeriodicalIF":3.0,"publicationDate":"2025-08-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144842623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analytical modeling of 2-dimensional space charge distribution for vertical GaN diode breakdown voltage optimization 垂直GaN二极管击穿电压优化的二维空间电荷分布解析建模

IF 3

Micro and Nanostructures Pub Date : 2025-08-05 DOI: 10.1016/j.micrna.2025.208288

Jingyang Zhang , Yibo Liu , Feng Feng , Xinyi Liu , Yujia Sheng , Zichun Li , Shan Huang , Fion Sze-Yan Yeung , Man-Chun Tseng , Zhaojun Liu

{"title":"Analytical modeling of 2-dimensional space charge distribution for vertical GaN diode breakdown voltage optimization","authors":"Jingyang Zhang , Yibo Liu , Feng Feng , Xinyi Liu , Yujia Sheng , Zichun Li , Shan Huang , Fion Sze-Yan Yeung , Man-Chun Tseng , Zhaojun Liu","doi":"10.1016/j.micrna.2025.208288","DOIUrl":"10.1016/j.micrna.2025.208288","url":null,"abstract":"<div><div>This study investigates the breakdown characteristics of GaN pn junctions under reverse bias, focusing on electric field crowding effects. An analytical model is developed to characterize the boundary distribution of depletion regions in non-ideal pn junctions, with particular emphasis on the electric field crowding effect. The model is rigorously validated through comprehensive numerical simulations. The results offer critical insights into the mechanisms of electric field crowding, advancing the theoretical understanding of the electric field crowding effect. Furthermore, the proposed model enables the optimization of device termination structures, including junction termination extensions, guard rings, and field plates. Moreover, the depletion region in P-type GaN is analyzed using a non-ideal two-dimensional model. By combining numerical simulations and analytical calculations, an optimization scheme is developed to mitigate the non-uniform charge distribution in p-GaN under reverse bias, offering guidelines for GaN wafer epitaxial growth parameters. In contrast to conventional terminal structure design methods, the proposed approach potentially integrates optimization at the epitaxial growth stage, substantially reducing process complexity and fabrication costs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208288"},"PeriodicalIF":3.0,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144852845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Achieving high efficiency of Pb–Sn-based dual cation perovskite solar cells via interfacial charge transport layer: A numerical study 通过界面电荷传输层实现pb - sn基双阳离子钙钛矿太阳能电池的高效率：数值研究

IF 3

Micro and Nanostructures Pub Date : 2025-08-05 DOI: 10.1016/j.micrna.2025.208287

Ali S. Alshomrany , J. Fatima Rasheed , Thamraa Alshahrani , Firoz Khan

{"title":"Achieving high efficiency of Pb–Sn-based dual cation perovskite solar cells via interfacial charge transport layer: A numerical study","authors":"Ali S. Alshomrany , J. Fatima Rasheed , Thamraa Alshahrani , Firoz Khan","doi":"10.1016/j.micrna.2025.208287","DOIUrl":"10.1016/j.micrna.2025.208287","url":null,"abstract":"<div><div>Even though perovskite solar cells (PSCs) are well known for their cost-effectiveness and efficiency, their productivity can be further enhanced through appropriate interfacial recombination dynamics and composition engineering of cation sites. The alleviation of toxicity through suitable alloying, alongside hole transport layer (HTL) optimization, ensures eco-friendly and effectual PSCs. To investigate all the aforesaid strategies in a single solar structure, we undertook a numerical simulation study of the following novel arrangement: FTO/PCBM/FAMAPbSnI<sub>3</sub>/rGO/HTL/Au. The numerical assessment meticulously optimized interfacial engineering using reduced graphene oxide (rGO), A-site composition engineering (FA/MA), B-site alloying (Pb–Sn), and HTL optimization (PEDOT:PSS, CdTe, and CFTS) through various layer parameter variations. The alterations in key parameters of the rGO interfacial layer, FAMAPbSnI<sub>3</sub> absorber layer, and various CTLs resulted in divergent performance characteristics among the HTL configurations, with the cadmium telluride (CdTe)-based HTL yielding the highest efficiency of 26.36% at an absorber donor density of 1 × 10<sup>18</sup> cm<sup>−3</sup>. Moreover, a peak efficiency of 26.93% was attained with a 10 nm electron transport layer thickness across the various HTL configurations. This work offers an insightful simulation-based perspective that integrates diverse engineering methodologies within a single device design, aiming to regulate band alignment, recombination rates, and toxicity while preserving the device's productivity.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208287"},"PeriodicalIF":3.0,"publicationDate":"2025-08-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144826910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0