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Influence of annealing on the thermal quenching of photoluminescence in GaAsBi/GaAs quantum dots with bimodal inhomogeneous broadening
IF 2.7
Micro and Nanostructures Pub Date : 2025-02-01 DOI: 10.1016/j.micrna.2024.208039
S. Zouaghi , A. Ben Abdelwahed , H. Fitouri , W.S. Alharbi , A. Rebey
{"title":"Influence of annealing on the thermal quenching of photoluminescence in GaAsBi/GaAs quantum dots with bimodal inhomogeneous broadening","authors":"S. Zouaghi ,&nbsp;A. Ben Abdelwahed ,&nbsp;H. Fitouri ,&nbsp;W.S. Alharbi ,&nbsp;A. Rebey","doi":"10.1016/j.micrna.2024.208039","DOIUrl":"10.1016/j.micrna.2024.208039","url":null,"abstract":"<div><div>GaAsBi/GaAs quantum dots (QDs) samples with a bimodal size distribution grown by atmospheric pressure metalorganic vapor phase epitaxy (AP-MOVPE) on <em>p</em>-GaAs substrates and annealed at different temperatures were investigated by photoluminescence (PL) measurements. The analyses of the Arrhenius fit of the integrated PL intensity show two types of non-radiative recombination processes, describing the strong thermal quenching of PL. The thermal quenching of the as-grown sample is clearly quicker compared to the annealed QD samples. It is attributed to a higher density of non-radiative Bi complexes and native defects related to GaAs host lattice. The activation energy value for the large QD increases in the annealed samples suggests a modification in the depth of the confining potential. The temperature dependence of the PL peak energy of small QD presents an S-shape variation, while the PL line width follows a non-monotonic form. These behaviors have been progressively reduced in the annealed samples. These experimental results have been interpreted in the context of the thermally activated carrier transfer process between different QDs. Thus, annealing reduces the localized state density and therefore improves the optical quality of GaAsBi/GaAs QDs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208039"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Localized surface plasmon enhanced the photoresponse performance of Ga2O3 ultraviolet photodetectors
IF 2.7
Micro and Nanostructures Pub Date : 2025-02-01 DOI: 10.1016/j.micrna.2024.208063
Shuang Zhang , Guoqing Zhang , Hui Wu , Zhen Cui
{"title":"Localized surface plasmon enhanced the photoresponse performance of Ga2O3 ultraviolet photodetectors","authors":"Shuang Zhang ,&nbsp;Guoqing Zhang ,&nbsp;Hui Wu ,&nbsp;Zhen Cui","doi":"10.1016/j.micrna.2024.208063","DOIUrl":"10.1016/j.micrna.2024.208063","url":null,"abstract":"<div><div>The finite-difference time-domain method is employed in this study to analyze the influence of structural parameters on ultraviolet light absorption, and computer-aided design techniques are utilized to simulate the relevant characteristics of day-blind ultraviolet photodetectors. Two absorption structures are designed: metal nanoparticles-Ga<sub>2</sub>O<sub>3</sub> and metal nanoparticles-Ga<sub>2</sub>O<sub>3</sub>-metal layers. The second structure achieves an absorption peak intensity of over 0.95 in the ultraviolet region. By investigating the electric field at the resonance peak, localized surface plasmon resonance is found to occur at the interface between the nanoparticles and Ga<sub>2</sub>O<sub>3</sub>, significantly enhancing the absorption of photon energy by the nanoparticles, which benefits the design of ultraviolet photodetectors. Furthermore, a gold nanoparticle Ga<sub>2</sub>O<sub>3</sub> photodetector is designed, and it is discovered that the responsivity and external quantum efficiency of the gold nanoparticle Ga<sub>2</sub>O<sub>3</sub> photodetector can reach up to 4.13 A/W and 2276 %, respectively, with the gold nanoparticles and gold absorption layer significantly improving the device's optoelectronic performance. The effect of Ga<sub>2</sub>O<sub>3</sub> thickness on optoelectronic performance is also explored, showing that the detector's performance can be enhanced by adjusting the Ga<sub>2</sub>O<sub>3</sub> thickness.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208063"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The annealing treatment of interface states in planar and recessed-anode AlGaN/GaN Schottky barrier diodes
IF 2.7
Micro and Nanostructures Pub Date : 2025-02-01 DOI: 10.1016/j.micrna.2024.208038
Yan Ren , Chao Pang , Baijun Zhang , Honghui Liu , Yiqiang Ni , Shengze Zhou
{"title":"The annealing treatment of interface states in planar and recessed-anode AlGaN/GaN Schottky barrier diodes","authors":"Yan Ren ,&nbsp;Chao Pang ,&nbsp;Baijun Zhang ,&nbsp;Honghui Liu ,&nbsp;Yiqiang Ni ,&nbsp;Shengze Zhou","doi":"10.1016/j.micrna.2024.208038","DOIUrl":"10.1016/j.micrna.2024.208038","url":null,"abstract":"<div><div>The recessed-anode AlGaN/GaN Schottky barrier diodes (SBDs) were fabricated by self-aligned process, and the effect of annealing of planar and recessed-anode AlGaN/GaN SBDs were investigated. The interface states of AlGaN/GaN SBD were treated by post anode annealing (PAA), which may be attributed to the reduction of metal-induced gap states (MIGS) at Schottky interface. The interface state density (<em>N</em><sub><em>SS</em></sub>) of planar and recessed-anode AlGaN/GaN SBDs are suppressed by PAA processes to 1.6 × 10<sup>13</sup> eV<sup>−1</sup>cm<sup>−2</sup> and 3.9 × 10<sup>14</sup> eV<sup>−1</sup>cm<sup>−2</sup>, respectively. It is found that after annealing of AlGaN/GaN SBDs, the SBDs stability is enhanced, the leakage current is reduced, the ideal factor is optimized, and the ON-resistance is reduced. The PAA process can effectively improve the performance of AlGaN/GaN SBDs, which is a key technology to optimize GaN SBDs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208038"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Fabrication and simulation of optical shaping diffuser to control light patterns
IF 2.7
Micro and Nanostructures Pub Date : 2025-02-01 DOI: 10.1016/j.micrna.2024.208030
Po-Wei Chiu , Tien-Li Chang , Wei-Chun Chen , Yeeu-Chang Lee
{"title":"Fabrication and simulation of optical shaping diffuser to control light patterns","authors":"Po-Wei Chiu ,&nbsp;Tien-Li Chang ,&nbsp;Wei-Chun Chen ,&nbsp;Yeeu-Chang Lee","doi":"10.1016/j.micrna.2024.208030","DOIUrl":"10.1016/j.micrna.2024.208030","url":null,"abstract":"<div><div>This study utilizes a 532 nm ps laser micromachining technique on Schott-B270 glass to fabricate micro-lens array (MLA) with optimized curvature and minimal surface roughness, aimed at achieving an optical shaping diffuser. The research demonstrates a two-step fabrication process that combines picosecond laser processing with wet etching, significantly enhancing optical diffusion. Square-shaped micro-lenses with diffusion angles ranging from 29° to 62° were successfully created, along with hexagonal and rectangular shapes. Optical simulations using LightTools, which employed built-in Bezier curves to design micro-lens parameters, analyzed the impact of micro-lens arrangements on light patterns. The simulations indicated that varying the spacing and overlap ratio of the micro-lenses influenced light intensity distribution, achieving uniform light patterns with intensity variations of less than 10 %. Experimental validation through optical measurements confirmed that the fabricated MLA produced well-defined light patterns, demonstrating their effectiveness for various optical applications. This work contributes to advancing the understanding of micro-lens fabrication techniques and their applications in enhancing light distribution.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208030"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dual doped ring reconfigurable FET and its process variation analysis using random forest algorithm
IF 2.7
Micro and Nanostructures Pub Date : 2025-02-01 DOI: 10.1016/j.micrna.2024.208056
Indira Chatterjee, Srinivasan R
{"title":"Dual doped ring reconfigurable FET and its process variation analysis using random forest algorithm","authors":"Indira Chatterjee,&nbsp;Srinivasan R","doi":"10.1016/j.micrna.2024.208056","DOIUrl":"10.1016/j.micrna.2024.208056","url":null,"abstract":"<div><div>This work combines three concepts, (i) reconfigurability, (ii) dual doped source-drain, and (iii) Ring FET to propose dual doped ring reconfigurable FET (D<sup>2</sup>R<sup>2</sup>FET). The proposed device concept has been demonstrated through DC and AC numerical device simulations. Its performance has been optimized by adjusting the source radius. Additionally, the device has also been studied for process variation impact using random forest algorithm. We have the following findings from the above studies, (i) source at the centre of structure offers better drive current compared to the drain at the centre structure, and (ii) Proposed device offers AC performance (unity gain cut-off frequency of 554Hz). Apart from these, the process variation study finds out the channel height (or epi-layer) and control gate work function as the most significant parameters.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208056"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pharmaceutical emerging pollutants photodegradation by the action of g-C3N4/BiVO4 heterojunctions
IF 2.7
Micro and Nanostructures Pub Date : 2025-02-01 DOI: 10.1016/j.micrna.2024.208053
E. Luevano-Hipolito, D. Sánchez-Martínez, I. Juarez-Ramírez
{"title":"Pharmaceutical emerging pollutants photodegradation by the action of g-C3N4/BiVO4 heterojunctions","authors":"E. Luevano-Hipolito,&nbsp;D. Sánchez-Martínez,&nbsp;I. Juarez-Ramírez","doi":"10.1016/j.micrna.2024.208053","DOIUrl":"10.1016/j.micrna.2024.208053","url":null,"abstract":"<div><div>Emerging contaminants are increasingly common in natural resources causing adverse health effects on humans, animals, and the environment. Thus, recently, a significant need for research to develop sustainable purification approaches to remove these pollutants from wastewater plants is required. Heterogenous photocatalysis represents a promising approach to remove traces of these pollutants from wastewater using semiconductor oxides. Some of the most promising materials for this purpose are g-C<sub>3</sub>N<sub>4</sub> and BiVO<sub>4</sub>, which when combined in a heterojunction favor high efficiencies to remove water trace pollutants, e.g., pharmaceuticals. Therefore, this work proposes the optimization of the synthesis of the g-C<sub>3</sub>N<sub>4</sub>/BiVO<sub>4</sub> heterojunction by microwave-hydrothermal method (MW-H) with an orthogonal L<sub>9</sub> Taguchi design of experiments. During the synthesis, four factors were changed: load of BiVO<sub>4</sub>, power, temperature, and time of the MW-H method, to find the optimal conditions to obtain g-C<sub>3</sub>N<sub>4</sub>/BiVO<sub>4</sub> heterojunctions with outstanding efficiencies to remove trace drugs of acetaminophen and tetracycline, contributing to proposes solutions for water purification. The g-C<sub>3</sub>N<sub>4</sub>/BiVO<sub>4</sub> heterojunction promoted efficiencies to remove both drugs up to 74 % for acetaminophen and 87 % for tetracycline, confirming mineralization degree of 21 and 35 %, respectively. A mechanism for the decomposition of the organic molecules was proposed through the study of oxidant species.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208053"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Corrigendum to ‘Innovative spacer material integration in tree-FETs for enhanced performance across variable channel lengths’ [Micro Nanostruct. 195 207974 (2024)]
IF 2.7
Micro and Nanostructures Pub Date : 2025-02-01 DOI: 10.1016/j.micrna.2024.208046
Dharavath Parvathi, P. Prithvi
{"title":"Corrigendum to ‘Innovative spacer material integration in tree-FETs for enhanced performance across variable channel lengths’ [Micro Nanostruct. 195 207974 (2024)]","authors":"Dharavath Parvathi,&nbsp;P. Prithvi","doi":"10.1016/j.micrna.2024.208046","DOIUrl":"10.1016/j.micrna.2024.208046","url":null,"abstract":"","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208046"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Multiple-parameter optimization of AlGaN nanoarrays based on optical absorption accelerated by machine learning
IF 2.7
Micro and Nanostructures Pub Date : 2025-02-01 DOI: 10.1016/j.micrna.2024.208061
Xian Wu , Hongkai Shi , Yuyan Wang , Yuting Dai , Chaoling Du , Yu Diao , Sihao Xia
{"title":"Multiple-parameter optimization of AlGaN nanoarrays based on optical absorption accelerated by machine learning","authors":"Xian Wu ,&nbsp;Hongkai Shi ,&nbsp;Yuyan Wang ,&nbsp;Yuting Dai ,&nbsp;Chaoling Du ,&nbsp;Yu Diao ,&nbsp;Sihao Xia","doi":"10.1016/j.micrna.2024.208061","DOIUrl":"10.1016/j.micrna.2024.208061","url":null,"abstract":"<div><div>AlGaN nanorod arrays (NRAs) have considerable significance in optoelectronic devices. However, due to the specificities of their structure, it is imperative to address the global optimization of material parameters, geometrical parameters, and system parameters. In this study, a combination of COMSOL simulation and machine learning is utilized to investigate the absorption under global parameter adjustment. Firstly, the optical absorptivity of Al<sub>0.35</sub>Ga<sub>0.65</sub>N modified by a single parameter is simulated and analyzed. The absorption of NRAs exceeds that of thin films. Moreover, the absorption is notably enhanced under forward incidence (FI) of photons compared to reverse incidence (RI). The optimal parameters for NRAs under FI are a diameter of 250 nm, a height of 600 nm, a substrate thickness of 50 nm, and an arrays period of 250 nm. Using the simulated results as dataset for machine learning, three regression forecasting models (RFR, DTR and NNR) are adopted. These models are meticulously trained and subsequently utilized to predict the absorption. The results indicate that RFR owns the highest accuracy with R<sup>2</sup> of 0.97 and MAE of 3.66. The validation set is additionally employed to verify the accuracy of RFR with 96 % area within the differential heatmap closed to zero. This research is expected to offer valuable insights for the structural design and optimization methods of AlGaN NRAs in the application of photocathodes, solar cells and photodetectors.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208061"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159771","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Elimination of band-edge states by Frenkel-like defects: Application in inorganic compound α-Ag2S
IF 2.7
Micro and Nanostructures Pub Date : 2025-01-30 DOI: 10.1016/j.micrna.2025.208085
Shuang Qiu , Hanyang Ji , Kaixuan Jin , Shuhan Tang , Xiaojie Liu
{"title":"Elimination of band-edge states by Frenkel-like defects: Application in inorganic compound α-Ag2S","authors":"Shuang Qiu ,&nbsp;Hanyang Ji ,&nbsp;Kaixuan Jin ,&nbsp;Shuhan Tang ,&nbsp;Xiaojie Liu","doi":"10.1016/j.micrna.2025.208085","DOIUrl":"10.1016/j.micrna.2025.208085","url":null,"abstract":"<div><div>The elimination of impurity states is an effective method to improve the properties of semiconductor material. Interstitial Se or Te doping in inorganic compound α-Ag<sub>2</sub>S would induce highly localized impurity states around the valence band maximum (VBM), which are so-called perturbed host states (PHSs). These PHSs possibly act as the recombination center and would affect the carrier transport. Herein, we propose the self-compensation method to eliminate the PHSs by introducing Frenkel-like defects. The first-principles calculations prove that the Frenkel-like defects, i.e., one first-nearest neighbor S-vacancy (V<sub>1S</sub>) around the interstitial dopant (Se<sub>i</sub> + V<sub>1S</sub> or Te<sub>i</sub> + V<sub>1S</sub>), are able to eliminate the PHSs. The Frenkel-like defect can not only achieve compensation for electronic structure, but also achieve compensation for carrier concentration. Instead, excessive Schottky defects would lead to partial compensation or overcompensation. Additionally, it is also found that the existence of Frenkel-like defect can lower the formation energy and improve the stability of the system. This discovery highlights the importance of Frenkel-like defects in eliminating impurity states, which is fundamentally different from the traditional scheme that mainly credits no introduction of additional foreign elements. Our results provide a new avenue to the design of eliminating impurity states in other semiconductors.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"200 ","pages":"Article 208085"},"PeriodicalIF":2.7,"publicationDate":"2025-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143168532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultra-wide range infrared photodetector based on BP/MoSe2 heterojunction
IF 2.7
Micro and Nanostructures Pub Date : 2025-01-28 DOI: 10.1016/j.micrna.2025.208081
Beiyun Liu , Chengjie Zhi , Guanxia Dai , Boxing An , Feihong Chu , Jicheng Mo , Xiuyan Zhang
{"title":"Ultra-wide range infrared photodetector based on BP/MoSe2 heterojunction","authors":"Beiyun Liu ,&nbsp;Chengjie Zhi ,&nbsp;Guanxia Dai ,&nbsp;Boxing An ,&nbsp;Feihong Chu ,&nbsp;Jicheng Mo ,&nbsp;Xiuyan Zhang","doi":"10.1016/j.micrna.2025.208081","DOIUrl":"10.1016/j.micrna.2025.208081","url":null,"abstract":"<div><div>Two-dimensional (2D) materials based photodetectors is a hot research field in recent years, especially black phosphorus (BP), which has been favored by researchers due to its benign properties of direct bandgap and bandgap of only 0.3 eV. However, devices based on BP only have low photoresponsivity and the material is prone to degradation, which is not conducive to their research in photodetectors. We constructed a BP and molybdenum molybdenum diselenide (MoSe<sub>2</sub>) heterojunction photodetector by depositing electrodes and then transferring materials using a dry transfer method. A pn junction is formed by p-type BP and n-type MoSe<sub>2</sub>, which generates a built-in electric field that helps to separate the photogenerated electron-hole pairs and improve the efficiency of photo detection. The device has a maximum photoresponsivity and specific detectivity of 0.167 A/W and 1.2 × 10<sup>10</sup> Jones at V<sub>ds</sub> = 1 V, V<sub>g</sub> = 0 V. The range of photo detection can be from 450 to 2400 nm. Our work has a positive impact on the research of two-dimensional material heterojunctions for infrared photodetectors.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"199 ","pages":"Article 208081"},"PeriodicalIF":2.7,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143145225","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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