Micro and Nanostructures最新文献

{"title":"Solution-processed cobalt doping for performance enhancement of p-type NiO thin-film transistors","authors":"Yerim Lee ,&nbsp;Tae-Gyu Hwang ,&nbsp;Won-Ju Cho ,&nbsp;Khang June Lee ,&nbsp;Hamin Park","doi":"10.1016/j.micrna.2025.208196","DOIUrl":"10.1016/j.micrna.2025.208196","url":null,"abstract":"<div><div>Oxide semiconductors have become key materials in electronic applications. However, the electrical performance of p-type oxides remains inferior to that of n-type oxides, which is a critical limitation that hinders the application of complementary metal–oxide–semiconductor (CMOS) based on oxide semiconductors. Therefore, enhancing the electrical performance of p-type oxide thin-film transistors (TFTs) is crucial to achieve the performance standards required for CMOS applications. Herein, we report solution-processed p-type NiO TFTs with an enhanced field-effect hole mobility (0.32 cm² V⁻¹ s⁻¹) and on–off current ratio (3.3 × 10³), which have been achieved by optimizing the thermal annealing and cobalt doping parameters. An annealing temperature of 500 °C and a cobalt doping concentration of 10 at.% provide the highest hole mobility and on–off current ratio. The enhancement mechanism in the p-type NiO channel is analyzed by X-ray photoelectron spectroscopy, X-ray diffraction, and ultraviolet–visible spectroscopy. The spectroscopic analysis reveals the effect of the characteristics of the NiO thin films, such as the energy bandgap, crystallinity, and Ni–O bonding characteristics, on the electrical properties of the p-type NiO TFTs. Our findings provide insights for further improving the electrical performance of p-type oxide semiconductors.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208196"},"PeriodicalIF":2.7,"publicationDate":"2025-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143916610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Temperature tolerance and sensitivity analysis of vertical TFET based biosensor under the influence of interface trap charges","authors":"Vandana Devi Wangkheirakpam ,&nbsp;Jagritee Talukdar","doi":"10.1016/j.micrna.2025.208185","DOIUrl":"10.1016/j.micrna.2025.208185","url":null,"abstract":"<div><div>This paper investigates the sensing performance of biosensor based on vertical TFET (VTFET) considering the impact of interface trap charges (ITCs). Both uniform and Gaussian type of trap distributions are considered for this analysis. The study shows the difference in the I_D-V_GS characteristics in the presence and absence of these ITCs after the nanogap cavities are immobilized with target biomolecules (k = 12). The sensitivity of the sensor is compared under the influence of ITC for various cavity profiles such as increasing, decreasing, concave, convex and also different fill factors which occur due to the non-ideal hybridization of biomolecules inside the cavity. The sensitivity obtained for decreasing profile in the absence of ITC is approximately 5x10⁴ and those obtained in the presence is approximately 4x10⁴. Furthermore, the low frequency noise performance of the proposed sensor is also studied in this paper and the dimension of the sensor is optimized to obtain minimal noise. Finally, the analysis has been done to realize the range of temperature in which this VTFET biosensor works efficiently.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208185"},"PeriodicalIF":2.7,"publicationDate":"2025-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143898584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Biaxial strain engineering of electronic structure and photovoltaic performance in Janus MoSTe-boron phosphide heterostructure","authors":"Xiao-Sa Xiao,&nbsp;You Xie,&nbsp;Li-Mei Hao,&nbsp;Qi-Chao Liu,&nbsp;Yu Zou,&nbsp;Su-Fang Wang,&nbsp;Tao Zhang","doi":"10.1016/j.micrna.2025.208191","DOIUrl":"10.1016/j.micrna.2025.208191","url":null,"abstract":"<div><div>2D van der Waals heterostructures (vdWHs) combining Janus transition metal dichalcogenides with boron phosphide (BP) demonstrate exceptional potential for next-generation optoelectronics. Through first-principles calculations, we systematically investigate strain-tunable electronic properties and photovoltaic performance of two distinct Janus MoSTe/BP configurations: TeMoS/BP and SMoTe/BP vdWHs. Our results reveal that both vdWHs exhibit type-II band alignment with indirect bandgaps (1.38 eV for TeMoS/BP, 0.93 eV for SMoTe/BP), transitioning to type-I semiconductor in TeMoS/BP under &gt;4 % tensile strain. Biaxial strain (−6 % to +6 %) induces significant spectral modulation: tensile strain causes 15–40 nm visible-range blueshifts with optical absorptivity reduction (12–28 %), while compressive strain induces 20–35 nm redshifts accompanied by 18–32 % peak enhancement. The TeMoS/BP vdWH achieves high power conversion efficiency (PCE) of 21.2 % at +2 % strain through optimized band alignment and strong built-in field, outperforming SMoTe/BP's maximum PCE of 11.9 % at +6 % strain. These findings establish strain-engineered Janus heterostructures as viable platforms for tunable photovoltaics and broadband optoelectronics, providing critical insights for designing high-efficiency 2D material-based energy devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208191"},"PeriodicalIF":2.7,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143894570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Microwave-induced plasma synthesis of Ag-doped ZnO nanoparticles: Modification in crystallography, defects, and bandgap","authors":"Chatdanai Boonruang ,&nbsp;Reungruthai Sirirak ,&nbsp;Arrak Klinbumrung","doi":"10.1016/j.micrna.2025.208192","DOIUrl":"10.1016/j.micrna.2025.208192","url":null,"abstract":"<div><div>Ag-doped ZnO nanoparticles were synthesized using a microwave-induced plasma (MIP) process, offering a rapid, energy-efficient, and environmentally friendly approach to tailoring ZnO's structural and optical properties. The effects of Ag doping (1, 3, and 5 at%) on crystallography, defect chemistry, and electronic transitions were systematically analyzed. X-ray diffraction (XRD) confirmed the formation of wurtzite ZnO with enhanced crystallinity and reduced microstrain. Especially, higher doping samples indicate the increase in the texture coefficient (TC). Rietveld refinement revealed minimal lattice distortions, while FT-IR and XPS analyses showed significant modifications in Zn–O bonding and oxygen vacancies (V_O) due to Ag incorporation. UV–Vis spectroscopy demonstrated tunable energy bandgaps, demonstrating a narrowing to 2.07 eV for 1 at% Ag doping due to defect-induced gap states and a widening to 2.56 eV for 5 at% doping due to the Burstein-Moss effect. Photoluminescence (PL) investigations revealed diminished defect emissions and reduced electron-hole recombination. The sample with 3 at% Ag doping exhibited optimal crystallinity and structural stability. These findings provide essential insights into the relationship between doping, defects, and bandgap modulation, serving as a guideline for optimizing ZnO-based nanomaterials for visible-light-driven photocatalysis and energy-efficient optoelectronic applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208192"},"PeriodicalIF":2.7,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143903742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Electronic, thermoelectric and optical properties of MoTe2 and M2CO2 (M= Ti, Zr and Hf) monolayers and their van der Waals heterostructures","authors":"Rami Mrad ,&nbsp;Laichaoui Mahdi Mourad ,&nbsp;Zhelin Li ,&nbsp;Sajid Ali ,&nbsp;Muhammad Fayaz ,&nbsp;Yuxiang Bu ,&nbsp;Shibing Chu ,&nbsp;M. Idrees","doi":"10.1016/j.micrna.2025.208190","DOIUrl":"10.1016/j.micrna.2025.208190","url":null,"abstract":"<div><div>Two-dimensional (2D) materials are characterized by their unique structure, where layers are connected by weak van der Waals (vdW) interactions between neighboring atoms. The main advantages of these 2D materials lie in van der Waals heterostructures (vdWHs), which exhibit unique and combined functionalities of the parent monolayers and play crucial roles in numerous fields. In this work, we used density functional theory calculations and investigated the undefined properties of the MoTe₂ and M₂CO₂ (M = Ti, Zr and Hf) monolayers and their vdWHs. We calculated the optoelectronic properties of the MoTe₂ and M₂CO₂ (M = Ti, Zr and Hf) monolayers. The calculated electronic band structure confirmed that MoTe₂ has a direct band, while M₂CO₂ monolayers have indirect band nature. We further investigated the optical and thermoelectric properties of the MoTe₂ and M₂CO₂ (M = Ti, Zr and Hf) monolayers. Furthermore, we demonstrated the structural and optoelectronic properties of M₂CO₂–MoTe₂ (M = Ti, Zr and Hf) vdWHs. Our calculated band structures show that Ti₂CO₂–MoTe₂ and Zr₂CO₂– MoTe₂ have indirect bands, while interestingly, Hf₂CO₂– MoTe₂ shows direct bands, with type-II band alignment. Optical properties indicated that M₂CO₂– MoTe₂ vdWHs have the ability to absorb a broad range of light, from the ultraviolet to the visible and infrared regions. Finally, we also calculated the thermoelectric properties of these systems, which suggested that these vdWHs could play a crucial role in enhancing the thermoelectric performance.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208190"},"PeriodicalIF":2.7,"publicationDate":"2025-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143886054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Surface modification strategies for enhanced performance and stability of perovskite solar cells","authors":"Wakeel Shah ,&nbsp;Sadia Muniza Faraz ,&nbsp;Zahoorul Hussain Awan ,&nbsp;Muhammad Hassan Sayyad","doi":"10.1016/j.micrna.2025.208189","DOIUrl":"10.1016/j.micrna.2025.208189","url":null,"abstract":"<div><div>Perovskite solar cells (PSCs) have emerged as promising candidates for next-generation photovoltaics, exhibiting remarkable advancements in their efficiency and cost-effectiveness. Surface modification has become a critical focus for the further optimization of device efficiency and stability. This article comprehensively reviews recent advances in surface engineering strategies targeting hole-transport layers (HTLs), electron-transport layers (ETLs), and perovskite-absorption layers in PSCs. By providing a detailed study of various surface modification techniques and materials, this review highlights their roles in improving carrier dynamics, enhancing stability, reducing recombination, and increasing the overall device performance. Importantly, this review links the gap between current research and practical applications, and presents valuable insights for researchers and industry professionals. This study aims to encourage further investigation and innovation in this rapidly growing field, accelerating the development of high-performance commercially viable PSCs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208189"},"PeriodicalIF":2.7,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143892330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing reliability and performance in Re-G-CJNFe-FETs: The role of gate work function and high-k dielectrics in analog and linearity innovations","authors":"Abhay Pratap Singh ,&nbsp;R.K. Baghel ,&nbsp;Sukeshni Tirkey ,&nbsp;Alok Kumar","doi":"10.1016/j.micrna.2025.208187","DOIUrl":"10.1016/j.micrna.2025.208187","url":null,"abstract":"<div><div>This study investigates the impact of gate work function (Φ_M) and recessed gate (Re-G) dielectric (ε_o) variations on the analog and linearity parameters of proposed recessed gate Cylindrical Junctionless Nanowire Ferroelectric Field Effect Transistors (Re-G-CJNFe-FETs), across devices D₁ to D₅. The architecture ensures 360-degree electrostatic control, reducing short-channel effects (SCEs), improving scalability, and enabling steep-slope switching for ultra-low-power operation. The analysis is conducted by evaluating key analog performance metrics such as drain current I_ds, OFF Current I_OFF, switching ration (I_ON/I_OFF), transconductance (g_m), and threshold voltage (V_th) under varying work functions (Φ_M = 5.26, Φ_M = 5.1, Φ_M = 4.9, Φ_M = 4.7) and dielectric materials (SiO₂, HfO₂, Al₂O₃, and TiO₂).The findings reveal that reducing the Φ_M from D₁ to D₅ significantly influences I_ds, I_OFF, and subthreshold slope (SS), with notable improvements in V_th and drain induced barrier lowering (DIBL). Similarly, replacing SiO₂ with high-k dielectrics enhances linearity metrics, including second and third-order transconductance coefficients (g_m2, g_m3), and third-order intermodulation distortion (IMD₃) These results are pivotal for designing energy-efficient and high-performance transistors for analog and RF applications. However, ongoing research into material engineering and device architectures continues to push the boundaries, making ferroelectric CJ-NFe-FETs, a viable candidate for next-generation semiconductor technology.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208187"},"PeriodicalIF":2.7,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143886441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Al doping for tuning magnetic and optical response of MgO monolayers","authors":"Rituparna Hazarika,&nbsp;Bulumoni Kalita","doi":"10.1016/j.micrna.2025.208186","DOIUrl":"10.1016/j.micrna.2025.208186","url":null,"abstract":"<div><div>Theoretical calculations are performed to study electronic, magnetic and optical properties of Al doped graphene-like MgO monolayers with impurity contents of 6.25 % and 12.5 %. Doping of Al has been considered not only as pure substitution and adsorption but also combination of these two. Al prefers Mg and O sites for pure substitution and adsorption, respectively. The substituted monolayers are planar, while adsorption of Al gives a buckling feature to the MgO plane. The impurity atoms induce magnetism in the host material irrespective of the type and site of doping, exceptionally when two consecutive sites are substituted with Al atoms. Semiconductor to metallic switching is observed in MgO monolayers for almost all of the doping configurations with Al substitution. On the other hand, Al adsorption results in reduced energy band gap values of pristine MgO monolayer due to the appearance of impurity states near the Fermi level. Consequently, the optical response of MgO monolayer gets tuned in presence of Al doping and accordingly becomes optically active for a wide spectral range starting from infrared to UV region in the electromagnetic spectrum. Notably, the system with consecutively adsorbed Al atoms is found to possess the maximum optical absorption in the Visible energy range. Therefore, nonmagnetic and UV optical characteristic of pristine MgO monolayer can be moderated through proficient decoration of Al for achieving a desirable material for spintronic and optoelectronic applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208186"},"PeriodicalIF":2.7,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143886274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of 1-(2-amino-5-bromophenyl)ethenone modification on CsPbI2Br films and perovskite solar cells","authors":"Ruzhe Gong,&nbsp;Min Zhong,&nbsp;Lei He","doi":"10.1016/j.micrna.2025.208188","DOIUrl":"10.1016/j.micrna.2025.208188","url":null,"abstract":"<div><div>Despite the remarkable thermal stability of inorganic CsPbI₂Br perovskites solar cells, their practical deployment is plagued by severe interfacial non-radiative recombination and black phase instability at room temperature. To address these challenges, we designed a novel multifunctional interfacial modifier 1-(2-Amino-5-bromophenyl)ethenone(2A5B). In this study, the interface of CsPbI₂Br perovskite/Spiro-OMeTAD hole transport layer was modified by 2A5B. The effects of 2A5B modification on the morphology, structure, optical absorption properties, defect density, carrier lifetime, hydrophobicity and energy level of CsPbI₂Br perovskite film, optoelectronic performance of the devices, and their mechanism were systematically studied, which were rarely reported. The oxygen atoms in the C<img>O groups of 2A5B form coordination bonds with uncoordinated Cs⁺ ions, while the nitrogen atoms in the –NH₂ groups coordinate with Pb²⁺ ions on the surface of CsPbI₂Br, passivating interface defects, modulating interface energy levels matching, and thus inhibiting interface non-radiative recombination. Simultaneously, the hydrogen atoms in the –NH₂ groups interact with surface free I⁻/Br⁻ ions of CsPbI₂Br via hydrogen bonding, suppressing halide migration and stabilizing the perovskite structure. The efficiency of the device modified with 4 mg/mL of 2A5B prepared in an air environment with relative humidity of 50 % increased by 51.08 % compared with that of the unmodified device. And 4 mg/mL 2A5B modified device could maintain an initial efficiency of 70 % after 40 days of storage at RH 50 %, whereas the unmodified device only keeps 20 % of the initial efficiency. This study provides valuable insights of designing interfacial modifiers between the perovskite layer and the hole transport layer, and the photovoltaic conversion efficiency and stability of the all-inorganic perovskite solar cells were improved in a highly humid air environment.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208188"},"PeriodicalIF":2.7,"publicationDate":"2025-04-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143882487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Unveiling optical FoMs of DSTC-VTFET for visible spectrum photosensor","authors":"Raj Kumar ,&nbsp;Shreyas Tiwari ,&nbsp;Girdhar Gopal ,&nbsp;Arun Kishor Johar ,&nbsp;Rajendra Mitharwal ,&nbsp;Tarun Varma","doi":"10.1016/j.micrna.2025.208183","DOIUrl":"10.1016/j.micrna.2025.208183","url":null,"abstract":"<div><div>This study used TCAD simulations to assess the electrical properties of a symmetrical vertical TFET with double germanium source regions and a T-shaped silicon channel (DSTC-VTFET) for very low power and photodetector devices. Enhanced switching performance is achieved through the inclusion of highly doped N⁺ epitaxial layers adjacent to the germanium sources. The photodetector's spectral response is evaluated under SiO₂ and HfO₂ gate oxides across varying wavelengths within the near-visible spectrum (300–700 nm), with optimized pocket doping levels. The DSTC-VTFET shows remarkable enhancements in ON-current (I_on), subthreshold swing (SS_avg), and dark current (I_Dark). These improvements boost optical performance metrics like responsivity (R), quantum efficiency (ƞ), signal-to-noise ratio (SNR), and spectral sensitivity (S_n). Devices with HfO₂ show superior carrier transport tunneling at the source-channel interface, achieving better I_on and SS_avg than SiO₂, particularly in the wavelength range of 300–700 nm. A reliability study, accounting for the influence of interface-trap impurities at the oxide-semiconductor boundary, indicates little SNR decrease when using SiO₂.The device demonstrates impressive performance with f_T of 175.42 GHz, SS_avg of 23.28 mV/dec, I_on of 8.38 × 10⁻⁸ A/μm, SNR of 90 dB, quantum efficiency reaching 85 %, and a spectral sensitivity of approximately 2 × 10⁴, showcasing its effectiveness in photodetection.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208183"},"PeriodicalIF":2.7,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143894569","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}