Micro and Nanostructures最新文献

{"title":"Comparison of magneto-optical transport properties due to piezoelectric phonon scattering in rectangular, parabolic, and semiparabolic GaAs-based quantum wells","authors":"Huynh Thi Phuong Thuy","doi":"10.1016/j.micrna.2024.208059","DOIUrl":"10.1016/j.micrna.2024.208059","url":null,"abstract":"<div><div>The magneto-optical transport characteristics resulting from the electron-piezoelectric-phonon (e-piezoelectric-p) interaction in two-dimensional systems with various confinement potentials, including parabolic, rectangular, and semi-parabolic quantum wells (QWs), are thoroughly studied and compared as the magnetic field is present by applying the technique of operator projection. The results revealed that the powers of the magneto-optical absorption resulting from the interaction of the e-piezoelectric-p in the three types of QWs not only are functions of the energy of an incident photon but also are strongly influenced by the parameters of material, structure, and external field. The result also indicates that the interaction strength of the e-piezoelectric-p in three types of QWs rises with a rising applied magnetic field, confined potential frequency (for parabolic and semi-parabolic QWs), and quantum-system temperature; conversely, it diminishes with a rising electron density in material and well-width (for rectangular QW). Especially, the resulting outcome demonstrates that the strength of the e-piezoelectric-p interaction in the rectangular well is the strongest; inversely, the interaction strength is the weakest in the semi-parabolic QW among the three types of QWs. This indicates that the magneto-optical property of the rectangular potential Q2D system is the most dominant among the three above confinement potentials.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208059"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation on electrical parameters in nanowire FET and nanosheet FET including trap charges and its circuit applications","authors":"Manosh Protim Gogoi,&nbsp;Rajesh Saha,&nbsp;Srimanta Baishya","doi":"10.1016/j.micrna.2024.208068","DOIUrl":"10.1016/j.micrna.2024.208068","url":null,"abstract":"<div><div>In this work, we have reported the DC, AC, and linearity parameters of Nanowire FET (NWFET) and Nanosheet FET (NSFET) with and without considering the interface trap charges (ITCs). The analysis is presented for two different ITCs distributions like Uniform and Gaussian. It is seen that the presence of ITCs leads to degraded drain current and subthreshold swing (SS) for both the FETs. However, NSFET has improved SS and I_ON/I_OFF ratio than NWFET even in the presence of ITCs. The SS values are 65.82 and 62.75 mV/decade, respectively, and I_ON/I_OFF ratio are 3.29 × 10⁸ and 1.12 × 10⁹, respectively, for NW and NS FETs. The presence of trap charges degrades the RF/analog behavior of the devices and opposite trend is obtained in linearity for both the devices. Furthermore, the circuit application is shown by implementing the digital inverter using NSFET at various widths. It is seen that voltage gain are 8.78 and 13.79 for width of 10 and 30 nm, respectively, in NSFET.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208068"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effects of magnetic field and structural parameters on multi-photon absorption spectra in Morse quantum wells with electron–phonon interactions","authors":"Tran Ky Vi ,&nbsp;Nguyen Anh Tuan ,&nbsp;Le Nguyen Dinh Khoi ,&nbsp;Nguyen Quang Hoc ,&nbsp;Anh-Tuan Tran","doi":"10.1016/j.micrna.2024.208062","DOIUrl":"10.1016/j.micrna.2024.208062","url":null,"abstract":"<div><div>We present a systematic theoretical study of the multi-photon nonlinear optical absorption properties of a <span><math><mrow><mtext>GaAs/A</mtext><msub><mrow><mtext>l</mtext></mrow><mrow><mi>x</mi></mrow></msub><mtext>G</mtext><msub><mrow><mtext>a</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mtext>As</mtext></mrow></math></span> based quantum well (QW) structure with Morse confinement potential under the influence of a magnetic field. Based on the stationary states due to the electron confinement in Morse QWs and the Landau levels obtained by solving the Schrodinger equation in the effective mass approximation, we have developed calculations for the optical absorption power with MPA using second-order perturbation theory. Our model accounts for electron–phonon interactions and considers both optical and acoustic phonon mechanisms in the MPA process. Our findings show that the one-photon absorption (1PA) peaks are larger and appear to the right of the two-photon absorption (2PA) peaks, whereas 2PA peaks are larger and occur to the right of three-photon absorption (3PA) peaks. The resonance peak positions follow the magneto-phonon resonance condition and are temperature-independent. Increasing the magnetic field and aluminum concentration induces a blue shift in the absorption spectra, whereas increasing the QW width leads to a red shift. Variations in magnetic field, aluminum concentration, and QW width also affect the peak intensities and full-width at half maximum (FWHM), with increasing values of the former two enhancing the FWHM, while expanding the QW width reduces it. Thermal excitations increase peak intensity without shifting their positions. Our study highlights the significance of nonlinear absorption processes (2PA, 3PA) in understanding optical absorption, despite their smaller FWHM compared to linear absorption (1PA). Overall, the Morse QW model demonstrates promising magneto-optical properties, making it a strong candidate for future optoelectronic device applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208062"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of hindrance and trap impurities on the sensitivity measurement of N-Pocket TFET based biosensor","authors":"Shreyas Tiwari ,&nbsp;Rajesh Saha ,&nbsp;Tarun Varma","doi":"10.1016/j.micrna.2024.208067","DOIUrl":"10.1016/j.micrna.2024.208067","url":null,"abstract":"<div><div>This work concentrated on the sensitivity assessment of the N-pocket TFET biosensor accounting for steric hindrance and interface trap effects. In this case, high-k gate oxide is positioned above the N+ pocket of the source regime to add a further tunneling component during the conduction mechanism. Additionally, the influence of interface charges and steric hindrance effects are assessed through the observation of the drain current (I_D), surface electro static potential (ѱ), current ratio (I_ON/I_OFF) and current sensitivity (S_ION). Further investigation is done by changing the length of cavity (L_C), thickness of cavity (T_C), drain voltage (V_DS), and position of biomolecules with respect to the sensing terminal. The effect of biomolecules on noise assessment parameters have also been studied on taking into consideration of non-idealistic effects. On considering steric hindrance and interface trap charges effects, streptavidin biomolecules report an error in sensitivity (67 %)_{No Trap} and (188.6 %)_Trap, respectively. Finally, the steric error estimation parameter of the supplied TFET biosensor is compared to the sensitivity of other FET-based biosensors described in publications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208067"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigating the optical properties of cylindrical core/shell/shell quantum dots (CCSSQDs) with and without hydrogenic impurity: Role of spatial factors, magnetic field, dielectric matrices and Rashba parameter","authors":"A. Naifar ,&nbsp;K. Hasanirokh","doi":"10.1016/j.micrna.2024.208049","DOIUrl":"10.1016/j.micrna.2024.208049","url":null,"abstract":"<div><div>Through this theoretical investigation, we highlight the precise role of various internal (core radius, height and first shell thickness) and external factors (impurity, magnetic field, dielectric environment and Rashba spin orbit interaction) on AlGaAs/GaAs/AlGaAs CCSSQD and their influence on the linear and nonlinear properties. The binding energy of a donor impurity under the influence of an applied magnetic field is computed using a variational method employing a three-parameter trial wave function and the effective mass approximation. The major outcomes of our quantitative research demonstrate a strong dependence between the core radius and first shell thickness with respect to the binding energy. Magnetic field, dielectric environment and Rashba parameter change drastically the impurity state and then modifies the optical characteristics in terms of intensity and peaks locations. By appropriately manipulating internal and external variables we can not only regulate the properties of the donor impurity but also guide developers in the creation of novel optoelectronic devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208049"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"4H–SiC double trench MOSFET with Inverted-T groove and integrated Schottky barrier diode","authors":"Yue Zhang ,&nbsp;Song Bai ,&nbsp;Guran Chen ,&nbsp;Teng Zhang ,&nbsp;Runhua Huang ,&nbsp;Shiyan Li ,&nbsp;Yong Yang","doi":"10.1016/j.micrna.2024.208052","DOIUrl":"10.1016/j.micrna.2024.208052","url":null,"abstract":"<div><div>In this letter, we propose an improved 4H–SiC double trench MOSFET with Inverted-T groove and integrated Schottky barrier diode (ITSBD-MOS). The device features an Inverted-T groove beneath the gate electrode and the integrated SBD locates on the bottom of source trench. Numerical simulations have been completed to study the proposed device. The maximum electric field in gate oxide of ITSBD-MOS is suppressed to below 3 MV/cm, while the turn-on voltage in reverse conduction state is lowered to 1.23 V. Besides, due to the introduction of Inverted-T groove, the gate-to-drain charge of the ITSBD-MOS is significantly reduced while the short-circuit capability is obviously improved. The calculated high-frequency figure of merit (HF-FOM = <em>R</em>_on,sp × <em>Q</em>_gd) of ITSBD-MOS is tremendously decreased compared with that of DT-MOS, which suggests that ITSBD-MOS is a promising candidate for external-diode free power electronics applications and high-frequency operations.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208052"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Gate misalignment effect on electrical characteristics and comparison of Analog/RF performance parameters of triple metal dual gate vertical TFET","authors":"Rohit R. Kumbhar,&nbsp;Rajesh Agarwal","doi":"10.1016/j.micrna.2024.208048","DOIUrl":"10.1016/j.micrna.2024.208048","url":null,"abstract":"<div><div>During the fabrication of a double gate TFET structure, there is a high chance of gate misalignment, which may affect the sensitivity of the sensors. In this paper, we investigated various effects of gate misalignment and switching characteristics of charge plasma-based triple metal double gate vertical TFET on electrical characteristics. We observed effects on analog/RF parameters on the proposed structure, such as transconductance (g_m), output conductance (g_ds), intrinsic gain (A_VO), total gate capacitance (C_GG), and cut-off frequency (f_T), along with threshold voltage (V_Th) and sub-threshold slope (SS). The work focuses on the investigation of these parameters in three scenarios of gate misalignment: towards the drain, towards the source, and towards the drain and source with different probable percentages of misalignment. The results are analyzed by considering SiO₂ and HfO₂ as gate oxide materials.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208048"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High performance of AlGaN/GaN HEMT with AlN cap layer","authors":"Xin Luo,&nbsp;Peng Cui,&nbsp;Tieying Zhang,&nbsp;Xinkun Yan,&nbsp;Siheng Chen,&nbsp;Liu Wang,&nbsp;Jiacheng Dai,&nbsp;Handoko Linewih,&nbsp;Zhaojun Lin,&nbsp;Xiangang Xu,&nbsp;Jisheng Han","doi":"10.1016/j.micrna.2024.208054","DOIUrl":"10.1016/j.micrna.2024.208054","url":null,"abstract":"<div><div>In this study, GaN high electron mobility transistors (HEMTs) with a 2 nm AlN cap layer (AC-HEMTs) were fabricated on SiC substrate. The AlN/AlGaN/AlN/GaN heterostructures feature smooth surface and low sheet resistivity. Compared to GaN HEMTs with a 2 nm GaN cap layer (GC-HEMTs), higher two-dimensional electron gas (2DEG) density was observed in AC-HEMTs due to the passivation and enhanced polarization effects from AlN cap layer. The introduction of AlN cap layer results in fewer additional polarization charge and higher 2DEG density, both of which weaken polarization Coulomb field (PCF) scattering intensity. Thus, AC-HEMTs exhibit higher electron mobility and better DC electrical characteristics including higher drain current, lower on-resistance, larger on/off current ratio and higher transconductance. Moreover, AC-HEMTs show prominent improvement of breakdown voltage from 625 V (GaN cap) to 855 V (AlN cap).</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208054"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159888","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of interface, border and bulk traps of Al2O3/β-Ga2O3 MOS capacitors via O2 plasma treatment","authors":"Song Du,&nbsp;Yuxiang Lin,&nbsp;Hao Xu,&nbsp;Hao Long","doi":"10.1016/j.micrna.2024.208058","DOIUrl":"10.1016/j.micrna.2024.208058","url":null,"abstract":"<div><div>While Gallium Oxide (Ga₂O₃) metal-oxide-semiconductor field-effect transistors (MOSFETs) hold great potential for high power applications, effective control of the MOS interface remains a subject of ongoing investigation. Previous studies always focused on interface traps, while overlooking the bulk and broader traps in dielectric layer. In this study, the effects of oxygen plasma treatment on the interface, border and bulk traps of Al₂O₃/β-Ga₂O₃ MOS capacitors were systematically investigated through high/low frequency C–V, hysteresis C–V, and forward-bias stress tests. The results showed that devices treated with 50 W plasma power for 1 min effectively passivated the interface dangling bonds and also improved the crystalline quality of Al₂O₃ dielectrics, exhibiting the lowest interface, border and bulk traps density. In contrast, excess plasma density or total treatment energy introduced etching defects, deteriorating the interface and dielectrics’ quality. The study demonstrates that appropriate oxygen plasma pretreatment provided an effective solution for the future application of high-performance β-Ga₂O₃ MOS devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208058"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance investigation of neoteric Pt/Pd Junctionless gas tube FET(JL-GT-FET) as a Hydrogen(H2) gas sensor for industrial applications-analytical model","authors":"Anubha Goel ,&nbsp;Sonam Rewari ,&nbsp;R.S. Gupta","doi":"10.1016/j.micrna.2024.208050","DOIUrl":"10.1016/j.micrna.2024.208050","url":null,"abstract":"<div><div>In this manuscript, an analytical model has been proposed for Junctionless (JL) Nanotube Field Effect Transistor (FET) as a hydrogen sensor, being called as a Junctionless Gas Tube FET (JL-GT-FET). Palladium (Pd) and platinum (Pt) has been exploited as the catalytic metal gate and are compared for their performance metrics. The proposed sensor, works on the principle that the pressure on the catalytic metal gate will be altered by the change in the concentration of gas molecules which in turn modulates the work-function of the metal gate. Thus, it can rightly be inferred that the change in the work-function of the metal is being used to detect the presence of hydrogen gas molecules. The performance parameters being analyzed are threshold voltage, electric field, surface potential, drain current, Transconductance, output conductance and sensitivity. Here, in this manuscript, an analytical model has also been developed for Junctionless Gas Tube FET (JL-GT-FET) as a hydrogen sensor. The Junctionless Gas FET based sensor has been compared with Nanowire FET under similar pressure and catalytic conditions. It has been established that the Junctionless Gas Tube FET exhibits much higher efficiency in sensing the pressure variations. Also, it has been established that the modeling so obtained by solving the 2-D Poisson equation with appropriate boundary conditions for the Junctionless Gas Tube FET are much in coherence with the results so obtained by simulating the device structure on the Atlas 3-D device simulator.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"198 ","pages":"Article 208050"},"PeriodicalIF":2.7,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143159770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}