Zisheng Wang , Wensheng Wei , Zhizhan Ye , Jintian Yang
{"title":"Simulation on a field-stop IGBT with inversion-channel metal-oxide-semiconductor system and Si/4H–SiC hetero-junction emitter","authors":"Zisheng Wang , Wensheng Wei , Zhizhan Ye , Jintian Yang","doi":"10.1016/j.micrna.2025.208280","DOIUrl":null,"url":null,"abstract":"<div><div>A field-stop IGBT including n-type and p-type channel metal-oxide-semiconductor (MOS) systems and Si/4H–SiC hetero-junction emitter (HEJE) is proposed. The n-MOS aside the primary gate is adopted to conduct electrons for realizing the enhanced device, the <em>p</em>-MOS aside the auxiliary gate is employed to extract holes during turn-off for decreasing energy loss (<em>E</em><sub>off</sub>). The HEJE acts as potential barrier to hinder holes outflow for enhancing conductance modulation while reducing on-state voltage (<em>V</em><sub>on</sub>) without falling breakdown voltage (<em>V</em><sub>B</sub>). The device structure and performance are simulated and optimized by the Sentaurus TCAD, the operation mechanism is elucidated, the influence from the interfacial defects in Si/4H-SiC HEJE, p-MOS and n-MOS on device performance is analyzed respectively. The devised IGBT shows obvious decrease in <em>V</em><sub>on</sub> and <em>E</em><sub>off</sub> comparing to the counterparts without HEJE and p-MOS. This paper provides new scheme for designing superior IGBT.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208280"},"PeriodicalIF":3.0000,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012325002092","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
A field-stop IGBT including n-type and p-type channel metal-oxide-semiconductor (MOS) systems and Si/4H–SiC hetero-junction emitter (HEJE) is proposed. The n-MOS aside the primary gate is adopted to conduct electrons for realizing the enhanced device, the p-MOS aside the auxiliary gate is employed to extract holes during turn-off for decreasing energy loss (Eoff). The HEJE acts as potential barrier to hinder holes outflow for enhancing conductance modulation while reducing on-state voltage (Von) without falling breakdown voltage (VB). The device structure and performance are simulated and optimized by the Sentaurus TCAD, the operation mechanism is elucidated, the influence from the interfacial defects in Si/4H-SiC HEJE, p-MOS and n-MOS on device performance is analyzed respectively. The devised IGBT shows obvious decrease in Von and Eoff comparing to the counterparts without HEJE and p-MOS. This paper provides new scheme for designing superior IGBT.