Simulation on a field-stop IGBT with inversion-channel metal-oxide-semiconductor system and Si/4H–SiC hetero-junction emitter

IF 3 Q2 PHYSICS, CONDENSED MATTER
Zisheng Wang , Wensheng Wei , Zhizhan Ye , Jintian Yang
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引用次数: 0

Abstract

A field-stop IGBT including n-type and p-type channel metal-oxide-semiconductor (MOS) systems and Si/4H–SiC hetero-junction emitter (HEJE) is proposed. The n-MOS aside the primary gate is adopted to conduct electrons for realizing the enhanced device, the p-MOS aside the auxiliary gate is employed to extract holes during turn-off for decreasing energy loss (Eoff). The HEJE acts as potential barrier to hinder holes outflow for enhancing conductance modulation while reducing on-state voltage (Von) without falling breakdown voltage (VB). The device structure and performance are simulated and optimized by the Sentaurus TCAD, the operation mechanism is elucidated, the influence from the interfacial defects in Si/4H-SiC HEJE, p-MOS and n-MOS on device performance is analyzed respectively. The devised IGBT shows obvious decrease in Von and Eoff comparing to the counterparts without HEJE and p-MOS. This paper provides new scheme for designing superior IGBT.
反沟道金属氧化物半导体系统和Si/ 4H-SiC异质结发射极的场阻IGBT仿真
提出了一种由n型和p型沟道金属氧化物半导体(MOS)系统和Si/ 4H-SiC异质结发射极(HEJE)组成的场阻型IGBT。利用主栅极旁边的n-MOS传导电子实现增强器件,利用辅助栅极旁边的p-MOS在关断时提取空穴以降低能量损失(Eoff)。HEJE作为势垒阻止空穴流出,增强电导调制,同时降低导通电压(Von)而不降低击穿电压(VB)。利用Sentaurus TCAD对器件结构和性能进行了仿真和优化,阐明了器件的工作机理,并分别分析了Si/4H-SiC HEJE、p-MOS和n-MOS的界面缺陷对器件性能的影响。设计的IGBT与未添加HEJE和p-MOS的IGBT相比,Von和Eoff明显降低。本文为设计高性能IGBT提供了新的方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
6.50
自引率
0.00%
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