Hongyu Liu , Haozhong Wu , Yuangang Wang , Yuanjie Lv , Shida Han , Tingting Han , Shaobo Dun , Hongyu Guo , Xuanze Zhou , Guangwei Xu , Shibing Long , Zhihong Feng
{"title":"源场镀β-(AlxGa1-x)2O3 MOSFET击穿电压超过7kV","authors":"Hongyu Liu , Haozhong Wu , Yuangang Wang , Yuanjie Lv , Shida Han , Tingting Han , Shaobo Dun , Hongyu Guo , Xuanze Zhou , Guangwei Xu , Shibing Long , Zhihong Feng","doi":"10.1016/j.micrna.2025.208255","DOIUrl":null,"url":null,"abstract":"<div><div>In this letter, β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> MOSFET with high breakdown voltage are demonstrated. A 150-nm β-(Al<sub>0.14</sub>Ga<sub>0.86</sub>)<sub>2</sub>O<sub>3</sub> epitaxial layer and a 30-nm Ga<sub>2</sub>O<sub>3</sub> buffer were grown on Fe-doped semi-insulating β-Ga<sub>2</sub>O<sub>3</sub> substrate by metal-organic chemical vapor deposition. The epitaxial thin film exhibits relatively high crystalline quality, with a FWHM of 54 arcsec in the XRD rocking curve and a surface roughness of 2.3 nm. A T-shaped gate and source-field-plated are fabricated to mitigate electric field crowding. The β-(Al<sub>0.14</sub>Ga<sub>0.86</sub>)<sub>2</sub>O<sub>3</sub> MOSFET with source-drain length of 84 μm demonstrates breakdown voltage of 7.2 kV, combined with the specific on-resistance of 3534 mΩ cm<sup>2</sup>, corresponding to power figures of merit of 14.7 MW/cm<sup>2</sup>. The results highlight the potential of β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> for high-voltage power electronics.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208255"},"PeriodicalIF":3.0000,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Source-field-plated β-(AlxGa1-x)2O3 MOSFET with breakdown voltage over 7kV\",\"authors\":\"Hongyu Liu , Haozhong Wu , Yuangang Wang , Yuanjie Lv , Shida Han , Tingting Han , Shaobo Dun , Hongyu Guo , Xuanze Zhou , Guangwei Xu , Shibing Long , Zhihong Feng\",\"doi\":\"10.1016/j.micrna.2025.208255\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this letter, β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> MOSFET with high breakdown voltage are demonstrated. A 150-nm β-(Al<sub>0.14</sub>Ga<sub>0.86</sub>)<sub>2</sub>O<sub>3</sub> epitaxial layer and a 30-nm Ga<sub>2</sub>O<sub>3</sub> buffer were grown on Fe-doped semi-insulating β-Ga<sub>2</sub>O<sub>3</sub> substrate by metal-organic chemical vapor deposition. The epitaxial thin film exhibits relatively high crystalline quality, with a FWHM of 54 arcsec in the XRD rocking curve and a surface roughness of 2.3 nm. A T-shaped gate and source-field-plated are fabricated to mitigate electric field crowding. The β-(Al<sub>0.14</sub>Ga<sub>0.86</sub>)<sub>2</sub>O<sub>3</sub> MOSFET with source-drain length of 84 μm demonstrates breakdown voltage of 7.2 kV, combined with the specific on-resistance of 3534 mΩ cm<sup>2</sup>, corresponding to power figures of merit of 14.7 MW/cm<sup>2</sup>. The results highlight the potential of β-(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> for high-voltage power electronics.</div></div>\",\"PeriodicalId\":100923,\"journal\":{\"name\":\"Micro and Nanostructures\",\"volume\":\"206 \",\"pages\":\"Article 208255\"},\"PeriodicalIF\":3.0000,\"publicationDate\":\"2025-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Micro and Nanostructures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2773012325001840\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012325001840","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Source-field-plated β-(AlxGa1-x)2O3 MOSFET with breakdown voltage over 7kV
In this letter, β-(AlxGa1-x)2O3 MOSFET with high breakdown voltage are demonstrated. A 150-nm β-(Al0.14Ga0.86)2O3 epitaxial layer and a 30-nm Ga2O3 buffer were grown on Fe-doped semi-insulating β-Ga2O3 substrate by metal-organic chemical vapor deposition. The epitaxial thin film exhibits relatively high crystalline quality, with a FWHM of 54 arcsec in the XRD rocking curve and a surface roughness of 2.3 nm. A T-shaped gate and source-field-plated are fabricated to mitigate electric field crowding. The β-(Al0.14Ga0.86)2O3 MOSFET with source-drain length of 84 μm demonstrates breakdown voltage of 7.2 kV, combined with the specific on-resistance of 3534 mΩ cm2, corresponding to power figures of merit of 14.7 MW/cm2. The results highlight the potential of β-(AlxGa1-x)2O3 for high-voltage power electronics.
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