Hu Liu , Lei Pan , Yifan Lei , Yuzhe Song , Peifeng Li , Yubin Li , Pengyu Wang
{"title":"Electron-hole bilayer TFET-based biosensor using hybrid tunneling mechanism for high off-state current and on-off current ratio sensitivities","authors":"Hu Liu , Lei Pan , Yifan Lei , Yuzhe Song , Peifeng Li , Yubin Li , Pengyu Wang","doi":"10.1016/j.micrna.2025.208266","DOIUrl":null,"url":null,"abstract":"<div><div>To facilitate the injection of biomolecules and device integration, we design a novel vertical biosensor based on an electron-hole bilayer tunnel field-effect transistor. This biosensor utilizes the off-state point tunneling current for biomolecules detection, which makes its off-state current sensitivity (<em>S</em><sub>Ioff</sub>) independent of gate voltage, contributing to reduced power consumption. Its on-state current depends on the line tunneling between the electron-hole bilayer, allowing higher on-off current ratio sensitivity (<em>S</em><sub>Ion/Ioff</sub>) under low bias conditions. Investigations reveal enhanced sensitivity toward negatively charged biomolecules with high dielectric and charge density. Furthermore, optimal <em>S</em><sub>Ioff</sub> and <em>S</em><sub>Ion/Ioff</sub> are achieved when the bio-cavity width equals 4 nm. Investigations demonstrate that superior sensing performance can be obtained when probes with a high filling rate are concentrated on the right side of the bio-cavity, and the biomolecule filling rate significantly affects the detection ability of high-<em>k</em> biomolecules. Numerical calculations demonstrate that the proposed biosensor exhibits exceptional <em>S</em><sub>Ioff</sub> (∼10<sup>13</sup>) and <em>S</em><sub>Ion/Ioff</sub> (∼10<sup>12</sup>) at 0.5 V, significantly advancing the application potential of TFET-based biosensors in low-power fields.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"207 ","pages":"Article 208266"},"PeriodicalIF":3.0000,"publicationDate":"2025-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012325001955","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
To facilitate the injection of biomolecules and device integration, we design a novel vertical biosensor based on an electron-hole bilayer tunnel field-effect transistor. This biosensor utilizes the off-state point tunneling current for biomolecules detection, which makes its off-state current sensitivity (SIoff) independent of gate voltage, contributing to reduced power consumption. Its on-state current depends on the line tunneling between the electron-hole bilayer, allowing higher on-off current ratio sensitivity (SIon/Ioff) under low bias conditions. Investigations reveal enhanced sensitivity toward negatively charged biomolecules with high dielectric and charge density. Furthermore, optimal SIoff and SIon/Ioff are achieved when the bio-cavity width equals 4 nm. Investigations demonstrate that superior sensing performance can be obtained when probes with a high filling rate are concentrated on the right side of the bio-cavity, and the biomolecule filling rate significantly affects the detection ability of high-k biomolecules. Numerical calculations demonstrate that the proposed biosensor exhibits exceptional SIoff (∼1013) and SIon/Ioff (∼1012) at 0.5 V, significantly advancing the application potential of TFET-based biosensors in low-power fields.