Source-field-plated β-(AlxGa1-x)2O3 MOSFET with breakdown voltage over 7kV

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures Pub Date : 2025-06-24 DOI:10.1016/j.micrna.2025.208255

Hongyu Liu , Haozhong Wu , Yuangang Wang , Yuanjie Lv , Shida Han , Tingting Han , Shaobo Dun , Hongyu Guo , Xuanze Zhou , Guangwei Xu , Shibing Long , Zhihong Feng

{"title":"Source-field-plated β-(AlxGa1-x)2O3 MOSFET with breakdown voltage over 7kV","authors":"Hongyu Liu , Haozhong Wu , Yuangang Wang , Yuanjie Lv , Shida Han , Tingting Han , Shaobo Dun , Hongyu Guo , Xuanze Zhou , Guangwei Xu , Shibing Long , Zhihong Feng","doi":"10.1016/j.micrna.2025.208255","DOIUrl":null,"url":null,"abstract":"<div><div>In this letter, β-(AlxGa1-x)2O3 MOSFET with high breakdown voltage are demonstrated. A 150-nm β-(Al0.14Ga0.86)2O3 epitaxial layer and a 30-nm Ga2O3 buffer were grown on Fe-doped semi-insulating β-Ga2O3 substrate by metal-organic chemical vapor deposition. The epitaxial thin film exhibits relatively high crystalline quality, with a FWHM of 54 arcsec in the XRD rocking curve and a surface roughness of 2.3 nm. A T-shaped gate and source-field-plated are fabricated to mitigate electric field crowding. The β-(Al0.14Ga0.86)2O3 MOSFET with source-drain length of 84 μm demonstrates breakdown voltage of 7.2 kV, combined with the specific on-resistance of 3534 mΩ cm2, corresponding to power figures of merit of 14.7 MW/cm2. The results highlight the potential of β-(AlxGa1-x)2O3 for high-voltage power electronics.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208255"},"PeriodicalIF":2.7000,"publicationDate":"2025-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Micro and Nanostructures","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773012325001840","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}

引用次数: 0

Abstract

In this letter, β-(Al_xGa_1-x)₂O₃ MOSFET with high breakdown voltage are demonstrated. A 150-nm β-(Al_0.14Ga_0.86)₂O₃ epitaxial layer and a 30-nm Ga₂O₃ buffer were grown on Fe-doped semi-insulating β-Ga₂O₃ substrate by metal-organic chemical vapor deposition. The epitaxial thin film exhibits relatively high crystalline quality, with a FWHM of 54 arcsec in the XRD rocking curve and a surface roughness of 2.3 nm. A T-shaped gate and source-field-plated are fabricated to mitigate electric field crowding. The β-(Al_0.14Ga_0.86)₂O₃ MOSFET with source-drain length of 84 μm demonstrates breakdown voltage of 7.2 kV, combined with the specific on-resistance of 3534 mΩ cm², corresponding to power figures of merit of 14.7 MW/cm². The results highlight the potential of β-(Al_xGa_1-x)₂O₃ for high-voltage power electronics.

查看原文本刊更多论文

源场镀β-(AlxGa1-x)2O3 MOSFET击穿电压超过7kV

本文演示了具有高击穿电压的β-(AlxGa1-x)2O3 MOSFET。采用金属有机化学气相沉积的方法在掺铁半绝缘β-Ga2O3衬底上生长了150 nm的β-(Al0.14Ga0.86)2O3外延层和30 nm的Ga2O3缓冲层。该外延薄膜具有较高的晶体质量，XRD摆动曲线的FWHM为54 arcsec，表面粗糙度为2.3 nm。设计了t形栅极和源场镀板，以减轻电场拥挤。源漏极长度为84 μm的β-(Al0.14Ga0.86)2O3 MOSFET击穿电压为7.2 kV，导通电阻为3534 mΩ cm2，等效功率为14.7 MW/cm2。结果突出了β-(AlxGa1-x)2O3在高压电力电子器件中的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Micro and Nanostructures

CiteScore

6.50

自引率

0.00%

发文量