Efficiency improvement of CIGS solar cells with ZnSe buffer layer and SnS BSF layer

IF 2.7 Q2 PHYSICS, CONDENSED MATTER
Ahmed Labadi , Souad Tobbeche , Okba Saidani , Mohammed Bouladame , Farida Brahimi
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Abstract

Copper indium gallium selenium (CIGS) solar cells have attracted significant attention, owing to their high efficiency, flexibility, and cost-effectiveness. Their direct bangap and significant optical absorption coefficient of about 105 cm−1 make them particularly promising for photovoltaic applications. This study presents an extensive numerical analysis using SCAPS-1D software, systematically evaluating buffer layers (CdS, In2S3, ZnS, ZnSe) and back surface field (BSF) layer materials (PbS, SnS, CuTe2) to optimise performance. Unlike previous studies focusing on individual materials, our comprehensive approach reveals critical insights into layer interactions through comparative analysis. SnS emerged as the most effective BSF material, achieving an open-circuit voltage of 0.815 V and an efficiency of 26.75 % when paired with ZnSe as the buffer layer. This is due to the BSF's ability to minimise back-surface recombination and enhance carrier collection. This result is also attributed to ZnSe's better band alignment with the CIGS layer, which reduces interface recombination and enhances device performance. Additionally, reducing The CIGS layer thickness from 3 μm to 2.2 μm decreases material usage and costs, with minimal impact on efficiency when ZnSe and SnS are used. This combination ensures high efficiency and reduced toxicity. In the second set of investigations, we optimise the absorber, buffer, and BSF layer thicknesses and the doping concentrations by analysing the short-circuit current density, open-circuit voltage, fill factor, and efficiency of the CIGS solar cell. The results show a high efficiency of 33.70 % for layer thicknesses of ZnSe, CIGS, and SnS of 40 nm, 2.2 μm, and 50 nm, respectively, and doping concentrations of the order of 1016, 1.65 × 1019, and 1016 cm−3, respectively. We also investigate the effects of defect densities within the CIGS, ZnSe, and SnS layers, as well as the CIGS/ZnSe and CIGS/SnS interfaces. Defects in both the bulk and at interfaces degrade the performance of the solar cells. Finally, we study the effect of temperature variations on solar cell performance. An increase in temperature contributes to efficiency degradation. This innovative structure, Mo/SnS/CIGS/ZnSe/ZnO, can be used to develop low-cost, sustainable, and eco-friendly high-efficiency CIGS solar cells.
ZnSe缓冲层和SnS BSF层对CIGS太阳能电池效率的提高
铜铟镓硒(CIGS)太阳能电池因其高效率、柔韧性和高性价比而备受关注。它们的直接碰撞和约105 cm−1的显著光学吸收系数使它们在光伏应用中特别有前景。本研究使用SCAPS-1D软件进行了广泛的数值分析,系统地评估缓冲层(CdS, In2S3, ZnS, ZnSe)和后表面场(BSF)层材料(PbS, SnS, CuTe2)以优化性能。与以往的研究不同,我们的综合方法通过比较分析揭示了对层间相互作用的关键见解。作为最有效的BSF材料,当与ZnSe配对作为缓冲层时,其开路电压为0.815 V,效率为26.75%。这是由于BSF能够最大限度地减少背表面重组并增强载流子收集。这一结果也归功于ZnSe与CIGS层更好的波段对准,从而减少了接口重组并提高了器件性能。此外,当使用ZnSe和SnS时,将CIGS层厚度从3 μm减少到2.2 μm,可以减少材料使用量和成本,对效率的影响最小。这种组合确保了高效率和降低毒性。在第二组研究中,我们通过分析CIGS太阳能电池的短路电流密度、开路电压、填充因子和效率,优化了吸收层、缓冲层和BSF层的厚度和掺杂浓度。结果表明,当ZnSe、CIGS和SnS的层厚分别为40 nm、2.2 μm和50 nm,掺杂浓度分别为1016、1.65 × 1019和1016 cm−3时,效率高达33.70%。我们还研究了CIGS、ZnSe和SnS层以及CIGS/ZnSe和CIGS/SnS界面中缺陷密度的影响。本体缺陷和界面缺陷都会降低太阳能电池的性能。最后,研究了温度变化对太阳能电池性能的影响。温度升高会导致效率下降。这种创新结构,Mo/SnS/CIGS/ZnSe/ZnO,可用于开发低成本,可持续和环保的高效CIGS太阳能电池。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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