Micro and Nanostructures最新文献

{"title":"Dopant-induced property modifications in aqueous-synthesized SiC nanoparticles","authors":"M.M. Esmael ,&nbsp;M.S. Omar ,&nbsp;F. Degdelen","doi":"10.1016/j.micrna.2026.208580","DOIUrl":"10.1016/j.micrna.2026.208580","url":null,"abstract":"<div><div>In this study, aluminum (Al), vanadium (V), and nitrogen (N) doped silicon carbide (SiC) nanoparticles were successfully synthesized using pulsed laser ablation in water (PLAL), a green and surfactant-free method. Doping was used to enhance the optical and structural properties of SiC nanoparticles. Ultraviolet–visible spectroscopy confirmed that N, Al, and V doping systematically narrowed the optical energy gap of SiC nanoparticles from 3.2 eV (undoped) to 2.37–3.11 eV, depending on the dopant type and concentration. Fourier transform infrared spectroscopy confirmed the preservation of Si–C bonds and revealed dopant-specific vibrational features, while the absence of secondary oxide or nitride phases indicated clean substitutional doping. Field-emission scanning electron microscopy showed that Al-doped (∼15 nm) and N-doped (∼14 nm) particles exhibited reduced size and enhanced crystallinity. In contrast, V-doping yielded larger (∼30 nm) particles with deep-level defects. Energy-dispersive X-ray spectroscopy confirmed successful incorporation of Al, N, and V, with dopant-specific peaks and variations in the Si:C ratio, indicating substitutional doping and defect-complex formation. Hall-effect measurements confirmed the semiconducting behavior of SiC nanoparticles, showing that conductivity increased with temperature (300–500 K) while mobility decreased due to phonon scattering. Doping enhanced conductivity but reduced mobility through impurity scattering, with Al- and N-doped SiC exhibiting the most favorable balance. After standardizing the particle size at 8 nm to remove size effects, Eg decreased from 3.2 eV (undoped) to 2.41 eV (N–SiC), 2.48 eV (Al–SiC), and 2.8 eV (V–SiC). The reduction indicates that dopants introduce localized states within the band gap, with nitrogen producing the most substantial effect. These results confirm that doping effectively tailors the electronic structure of SiC nanoparticles.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"212 ","pages":"Article 208580"},"PeriodicalIF":3.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026159","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"GaN MOSHEMTs and MISHEMTs: A comprehensive review of device physics, materials innovation, and technological pathways in power and RF electronics","authors":"A. Danielraj ,&nbsp;Reshma P Vengaloor ,&nbsp;A. Lakshmi Narayana ,&nbsp;C. Sivamani","doi":"10.1016/j.micrna.2026.208571","DOIUrl":"10.1016/j.micrna.2026.208571","url":null,"abstract":"<div><div>The rapid evolution of wide bandgap semiconductor technology has positioned gallium nitride (GaN) metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) and metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) as transformative solutions for next-generation power electronics and radio frequency (RF) applications. This comprehensive review examines twenty years of technological advancement in GaN insulated gate devices, from foundational research breakthroughs in 2005 to cutting-edge commercial implementations in 2025. The fundamental advantages of GaN's wide bandgap (3.39 eV), high critical electric field (3.3 MV/cm), and superior electron mobility (2000 cm²/V·s) enable unprecedented device performance characteristics including breakdown voltages exceeding 3 kV, switching frequencies approaching 10 MHz, and power densities surpassing 7 W/mm. This review systematically analyzes the critical technological pillars enabling these achievements: advanced gate dielectric materials ranging from conventional oxides (Al₂O₃, HfO₂, SiO₂) to innovative nitride-based systems (SiN_x, AlN) and emerging ferroelectric compounds; sophisticated device architectures including recessed gate structures, field plate configurations, and multi-channel designs that optimize performance trade-offs; and precision fabrication techniques encompassing atomic layer deposition, plasma-enhanced chemical vapor deposition, and plasma-free processing methods. The analysis reveals remarkable progress in enhancement-mode operation with positive threshold voltages exceeding 4 V, ultra-low gate leakage currents below 10⁻¹² A/mm, and frequency responses extending to 320 GHz. Record achievements include maximum current densities of 545 mA/mm, power-added efficiencies above 75 %, and operating temperatures surpassing 450 °C, positioning these devices as enabling technologies for 5G infrastructure, electric vehicle systems, and harsh environment applications. The comprehensive technological foundation established over two decades provides a robust platform for continued innovation, with emerging ultra-wide bandgap substrates and three-dimensional integration approaches promising even greater performance capabilities for future electronic systems.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"212 ","pages":"Article 208571"},"PeriodicalIF":3.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145981296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of spacer dielectric materials on advanced stacked nanosheet field effect transistors","authors":"M. Balasubrahmanyam ,&nbsp;Ekta Goel ,&nbsp;Kunal Singh ,&nbsp;Sanjay Kumar","doi":"10.1016/j.micrna.2026.208576","DOIUrl":"10.1016/j.micrna.2026.208576","url":null,"abstract":"<div><div>This study investigates several spacer materials, such as single-k (Air and SiO₂) and dual-k (SiO₂+HfO₂, and Si₃N₄+HfO₂) analyzing their influence on DC/Analog performance of three advanced nanosheet FETs i.e. SNSFET, HS NSFET, and PHS NSFET utilizing properly calibrated Sentaurus TCAD simulation models. Findings demonstrate that high-k spacers enhance device scalability, but low-k spacers diminish parasitic capacitance in high-speed applications. Combination of Si₃N₄ and HfO₂ spacer material gives better results on DC characteristics (ON current (I_ON), I_ON/I_OFF ratio, subthreshold swing (SS), drain induced barrier lowering (DIBL)) and Aanalo/RF (radio frequency) characteristics (transconductance (g_m), cutoff frequency (f_T), gain badwidth product (GBP), and transconductance frequency product (TFP)) compared to spacer materials of Air, SiO₂ and SiO₂+HfO₂. This study offers insights into the selection of spacer materials for next generation nanoscale devices, enhancing reliability, and device performance.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"212 ","pages":"Article 208576"},"PeriodicalIF":3.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design, optimization and linearity analysis of pocket engineered core-insulator embedded nanosheet FET (C-NSFET)","authors":"Shilpa Sonali ,&nbsp;Ashish Raman ,&nbsp;Abhishek Chauhan ,&nbsp;Prabhat Singh","doi":"10.1016/j.micrna.2026.208560","DOIUrl":"10.1016/j.micrna.2026.208560","url":null,"abstract":"<div><div>This work provides a comprehensive performance analysis of Core Embedded Insulator Nanosheet Field Effect Transistors (C-NSFET) with pocket implant. As transistor scaling advances into sub-5nm nodes, NSFETs are a strong candidate to lessen short channel effects. Additionally, the C-NSFETS has demonstrated enhanced performance in terms of reduced off current, which results in a superior I_on/I_off ratio. Pocket engineering has also become a crucial method for boosting carrier transport, lowering leakage, and increasing short-channel management. Using Silvaco TCAD simulator, critical DC metrics such as threshold voltage, I_on and I_off current are examined in connection to pocket doping profiles and geometries for C-NSFET. The device's suitability for linear and high-frequency applications is assessed using analog and RF metrics such as transconductance (gm), higher-order transconductance derivatives (gm2, gm3), VIP2, VIP3, IIP3, IMD3 and parasitic capacitances (Cgs and Cgd). The optimized pocket design significantly improves drive capacity and linearity, which makes them appealing options for future nanosheet-based CMOS devices intended for RF and mixed-signal applications. The pocket-engineered NSFET under consideration has a significant performance advantage over the traditional structure of NSFET. With an enhanced I_on/I_off ratio of 1.52 × 10⁵, the device achieves an ON-state drain current of 7.15 × 10⁻⁵ A. and an OFF-state current of 4.71 × 10⁻¹⁰ A. The effectiveness of pocket engineering for low-power applications is demonstrated by the suggested device's 28.6 % increased I_on/I_off ratio and 40.7 % enhanced ON-current over the traditional NSFET.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"212 ","pages":"Article 208560"},"PeriodicalIF":3.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026160","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First-principles insights into the structural, electronic, and optical properties of Ag, Zn, and Ag/Zn co-doped anatase TiO2 for enhanced photocatalysis","authors":"Isara Kotutha ,&nbsp;Apiwat Boonkaung ,&nbsp;Wutthikrai Busayaporn ,&nbsp;Rakchat Klinkla ,&nbsp;Theeranuch Nachaithong ,&nbsp;Pirapat Waritkraikul ,&nbsp;Wutthigrai Sailuam","doi":"10.1016/j.micrna.2026.208574","DOIUrl":"10.1016/j.micrna.2026.208574","url":null,"abstract":"<div><div>The structural, electronic, and optical properties of pristine and doped anatase TiO₂ were investigated using first-principles density functional theory (DFT). Pristine TiO₂ exhibits an indirect band gap of ∼1.93 eV from O-2p → Ti-3d transitions. Formation energy analysis shows that Ag doping is more favorable than Zn, with Zn stabilizing intralayer sites while Ag tends to cluster intralayer due to strong Ag–Ag attraction. Binding energy calculations confirm attractive interactions in Ag–Ag intralayer and Zn–Zn interlayer configurations, while Ag/Zn co-doping provides cooperative stabilization. In co-doped systems, Ag clusters intralayer while Zn stabilizes interlayer distortions, producing negative binding energies that suppress excessive Ag clustering, enhance dopant homogeneity, and generate controlled defect states, thereby improving structural stability and photocatalytic performance. Electronic structure analysis reveals that Ag and Zn introduce acceptor-like states Ti-3d/Ag-4d/O-2p states near the VBM, while co-doped systems form synergistic hybrid states (∼0.65–0.73 eV). Optical analyses show that pristine TiO₂ has a static dielectric constant <em>ε</em>₁(0) of ∼7, and that Ag, Zn and Ag/Zn co-doping significantly enhance visible absorption (1.5–3.0 eV), underscoring codoping as a promising strategy for efficient TiO₂-based photocatalysts.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"212 ","pages":"Article 208574"},"PeriodicalIF":3.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synthesis of SnS2 modified to sulfated tin oxide by electrochemical method and VOC sensing properties","authors":"Ayşe Nur Şahin ,&nbsp;Ahmet Altındal ,&nbsp;Zeynep Güven Özdemir","doi":"10.1016/j.micrna.2026.208570","DOIUrl":"10.1016/j.micrna.2026.208570","url":null,"abstract":"<div><div>This study investigates the room-temperature gas-sensing performance of next-generation sensors fabricated by electrochemically transforming 2D SnS₂ films into SO₄²⁻/SnO₂ structures. The sensors were prepared on an interdigital transducer via the spin-coating method, followed by low-potential electrochemical oxidation in a sulfuric acid–methanol medium to form a 3D SO₄²⁻/SnO₂ structure. Unlike conventional high-temperature oxidation or chemical etching methods that cause bulk degradation, this study employs a low-potential electrochemical oxidation–sulfation strategy to controllably convert the SnS₂ surface into SO₄²⁻/SnO₂ while preserving the nanostructure. While the Sn core structure remained intact, FTIR, EDX, and XPS analyses confirmed the successful surface sulfation and the formation of sulfate-related chemical states on the SnO₂ surface. XRD analysis verified crystalline-level structural transformation, and SEM imaging revealed distinct surface morphology changes. The gas-sensing performance was systematically evaluated against VOC's vapors over a concentration range of 50–350 ppm, enabling a comprehensive assessment of sensitivity and selectivity. Results showed that the SnS₂-based sensor exhibited high sensitivity to acetone, whereas the SO₄²⁻/SnO₂ structure demonstrated nearly tenfold enhanced responsiveness to NH₃ vapor. Sulfate functionalization introduced Lewis acidic surface sites, strengthening interactions with NH₃ and enabling nA-level responses. Although increased humidity (30–90 % RH) reduced response amplitude, reliable NH₃ sensing was maintained, with interference tests at 50 % RH confirming robust performance. Furthermore, stable and repeatable signals over 10 days demonstrated excellent durability. These results highlight electrochemical surface engineering as an effective strategy to develop metal oxide– and chalcogenide-based NH₃ sensors with improved selectivity, humidity tolerance, and long-term stability.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"212 ","pages":"Article 208570"},"PeriodicalIF":3.0,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145981295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on thermoelectric transport properties of halogenated silicene","authors":"Yuanchao Liu,&nbsp;Duan Li,&nbsp;Zishuo Li,&nbsp;Xinhao Liu,&nbsp;Bohan Li,&nbsp;Letao Chang","doi":"10.1016/j.micrna.2025.208533","DOIUrl":"10.1016/j.micrna.2025.208533","url":null,"abstract":"<div><div>A comprehensive investigation of thermoelectric transport properties in halogenated silicene XSi (X = F, Cl, Br, I) was conducted through first-principles calculations coupled with Boltzmann transport theory. The regulatory mechanisms of halogen doping on phonon scattering, electronic band structures, and thermoelectric figure of merit were systematically elucidated. Weak anisotropy in thermal transport characteristics was observed across halogenated silicene derivatives, with lattice thermal conductivities along the X-direction at room temperature being quantified as 5.46 W/(m·K) (FSi), 17.83 W/(m·K) (ClSi), 10.42 W/(m·K) (BrSi), and 1.50 W/(m·K) (ISi). Successful bandgap opening in monolayer silicene through halogenation was demonstrated by HSE06-calculated bandgap values ranging from 1.61 to 2.21 eV. Superior electronic transport performance was identified in FSi, exhibiting a maximum power factor (PF) of 356 μW/(m·K²) and achieving a peak n-type ZT value of 2.93 at 700 K, which was found to significantly exceed the maximum ZT values of 0.84 (ClSi), 1.32 (BrSi), and 0.73 (ISi) recorded for other derivatives. Halogenation is thereby established as an effective strategy for modulating thermoelectric performance in silicene-based systems, providing theoretical foundations for the design of silicon-based thermoelectric materials.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208533"},"PeriodicalIF":3.0,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145841731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and simulation of four-layer broadband solar metamaterial absorber for photothermal conversion","authors":"Yongpeng Ren,&nbsp;Yiping Sun,&nbsp;Fumeng Qin,&nbsp;Desheng Qu,&nbsp;Chunlei Li","doi":"10.1016/j.micrna.2025.208542","DOIUrl":"10.1016/j.micrna.2025.208542","url":null,"abstract":"<div><div>Traditional solar absorbers are limited by narrow bandwidth, low efficiency, and poor stability. In this study, a four-layer periodic broadband solar metamaterial absorber (BSMA) based on Ni–C-GaN-W is proposed. Using the finite element method, its absorption spectra and electromagnetic field distributions are studied. The BSMA achieves an average absorption of 96.49 % via synergistic effects of localized surface plasmon resonance, cavity resonance, magnetic resonance, and propagating surface plasmon resonance. Under AM1.5, its weighted average absorption reaches 98.31 %. The BSMA shows high process tolerance, polarization independence under normal incidence, and maintains more than 80 % average absorption for TM or TE polarizations at incident angles less than 50°. With photothermal conversion efficiency exceeding 90 % under high solar concentration, it is promising for solar collection, photovoltaics, and thermal radiation.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208542"},"PeriodicalIF":3.0,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145884876","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analytical modeling of buffer trap effects on 2DEG density and gate leakage current in p-GaN HEMT at cryogenic temperatures","authors":"Tanvika Garg,&nbsp;Sumit Kale","doi":"10.1016/j.micrna.2025.208534","DOIUrl":"10.1016/j.micrna.2025.208534","url":null,"abstract":"<div><div>This paper presents, for the first time, a physics-based model to elucidate the impact of buffer traps on p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) at cryogenic temperatures. We have incorporated Fermi level (<span><math><msub><mrow><mi>E</mi></mrow><mrow><mi>F</mi></mrow></msub></math></span>), trap concentration (<span><math><msub><mrow><mi>N</mi></mrow><mrow><mi>T</mi></mrow></msub></math></span>) and trap activation energy (<span><math><msub><mrow><mi>E</mi></mrow><mrow><mi>T</mi></mrow></msub></math></span>) to model the trap electron density. The proposed model accounts for potential variations at each interface within the p-GaN/AlGaN/GaN gate stack to determine the two-dimensional electron gas (2DEG) density by employing a self-consistent solution of the Schrödinger–Poisson equations. The model also incorporates gate leakage current through thermionic emission (TE), thermally assisted tunneling, and Poole–Frenkel (PF) emission mechanisms. The model has been comprehensively compared with experimental data from a p-GaN HEMT to validate its accuracy and effectiveness. Our approach exhibits a 33% improvement in 2DEG density and a remarkable 99% reduction in gate leakage current in comparison with the conventional model. These results indicate the promising potential of our proposed model for advancing p-GaN HEMTs in power electronics applications at cryogenic temperatures.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208534"},"PeriodicalIF":3.0,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145884784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tuning the optoelectronic properties of GaSe/ZrS2 van der Waals heterojunctions via shear strain and non-metal doping","authors":"Ruiyuan Li,&nbsp;Lu Yang,&nbsp;Hang Su","doi":"10.1016/j.micrna.2025.208540","DOIUrl":"10.1016/j.micrna.2025.208540","url":null,"abstract":"<div><div>This study investigates the optimization of the optoelectronic properties of GaSe/ZrS₂ van der Waals heterostructures through oxygen atom doping and applied shear strain. Using first-principles calculations based on density functional theory, the band structure, charge distribution, and optical response of the system were compared under intrinsic, doped, and varying strain conditions. The results show that the heterostructure exhibits a reduced band gap of 0.811 eV compared to its monolayer constituents, leading to significantly enhanced visible light absorption. Upon oxygen doping, the band gap further decreases to 0.708 eV, accompanied by notable interfacial charge transfer. When a 2 % shear strain is applied along the y-x direction, the band gap reaches its maximum value, after which it gradually decreases with increasing strain, demonstrating anisotropic tunability. Density of states analysis confirms that both doping and shear strain effectively modulate the electronic structure of the heterostructure. The dielectric constant increases steadily with strain, and a redshift in the absorption edge is observed, indicating improved utilization of low-energy photons. Differential charge density analysis reveals that the coupled effect of strain and doping induces a stronger polarization effect at the interface. This study demonstrates that the synergistic strategy of nonmetal atom doping and shear strain enables precise atomic-scale control over the electronic structure and optical properties of two-dimensional heterostructures, providing theoretical support for the development of high-efficiency, flexible, and spectrally tunable thin-film photovoltaic and photodetection devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"211 ","pages":"Article 208540"},"PeriodicalIF":3.0,"publicationDate":"2026-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145884786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}