Micro and Nanostructures最新文献

{"title":"Comprehensive electrothermal characterization of shrunk nanosheets in gate-all-around field-effect transistors","authors":"Yan Li ,&nbsp;Ziping Wang ,&nbsp;Fei Li ,&nbsp;Yabin Sun ,&nbsp;Yanling Shi ,&nbsp;Xiaojin Li","doi":"10.1016/j.micrna.2025.208213","DOIUrl":"10.1016/j.micrna.2025.208213","url":null,"abstract":"<div><div>Gate-all-around field effect transistor (GAAFET) possesses a three-dimensional stacked structure, with its channels wrapped by materials of lower thermal conductivity. This configuration hinders heat dissipation, leading to a more pronounced self-heating effect (SHE) compared to FinFETs. The shrinking of channel length, width, and thickness enhances phonon-boundary scattering within the nanosheet, thereby degrading thermal conductivity and exacerbating the SHE. In this paper, the degradation of thermal conductivity and its impact on the electrothermal characteristics of the GAAFET are studied. The calculated results demonstrate that the proposed thermal conductivity degradation model aligns well with the experimental data, whereas the conventional thermal conductivity model underestimates the degradation by up to 50.4 %. Furthermore, using the proposed model, the electrothermal characteristics of GAAFETs in 5 nm node are investigated. It is observed that, compared to the conventional thermal conductivity model employed in TCAD simulator, the peak temperature increases by 4.9 %, while the threshold voltage and the on-state current decrease by 3 % and 1 %, respectively. Consequently, the proposed thermal conductivity model offers a perceptive and accurate analysis of the thermal characteristics of GAAFETs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208213"},"PeriodicalIF":2.7,"publicationDate":"2025-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144185031","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Revolutionizing low-power efficiency: Unveiling the potential of Mg2Ge as source material in double gate vertical TFET design","authors":"Varun Mishra ,&nbsp;Anant Negi ,&nbsp;Vikas Rathi ,&nbsp;Yogesh Kumar Verma ,&nbsp;Chandni Tiwari","doi":"10.1016/j.micrna.2025.208214","DOIUrl":"10.1016/j.micrna.2025.208214","url":null,"abstract":"<div><div>Driven by the continuous miniaturization of device geometries and the increasing demand for higher switching speeds to minimize power dissipation, the tunnel field-effect transistor (TFET) presents a viable alternative to the conventional MOSFET. This study undertakes a comprehensive analysis of a Double-Gate Vertical TFET (DG-VTFET) architecture, comparatively evaluating silicon (Si) and magnesium germanide (Mg₂Ge) as source materials. Exploiting the band-to-band tunneling (BTBT) mechanism and, for the first time, employing the low-bandgap material Mg₂Ge (0.69 eV at room temperature, significantly lower than the 1.12 eV bandgap of Si), demonstrably superior performance is achieved compared to a conventional Si-based vertical TFET. Specifically, enhancements are observed in ON-state current (I_ON), average subthreshold swing (SS), threshold voltage (V_th), and current switching ratio, yielding values of 0.04 mA, 35.60 mV/dec, 0.282 V, and 4.405 × 10¹¹, respectively. These results underscore the potential of the Mg₂Ge-based VTFET for low-power applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208214"},"PeriodicalIF":2.7,"publicationDate":"2025-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144154400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"An overview of room temperature Fe2O3 gas sensors","authors":"M. Hjiri","doi":"10.1016/j.micrna.2025.208223","DOIUrl":"10.1016/j.micrna.2025.208223","url":null,"abstract":"<div><div>Resistive gas sensors have many advantages compared to other sensing materials such as graphene and its derivatives in term of much higher sensitivity, stability and faster dynamics. Nonetheless, one of the most serious problems of metal oxide sensors is their high sensing temperatures which leads to extensive power consumption and limit their widespread applications in places with energy shortage and remote areas. Thus, development of room temperature (RT) metal oxide gas sensors is of importance. N-type semiconducting α-Fe₂O₃ is one of the popular sensing candidates thanks to its non-toxicity, abundance, high stability, simple synthesis, and high mobility of charge carriers. Also, γ-Fe₂O₃ is another polymorph of iron oxide with n-type nature with less thermal stability. For gas sensing applications, often the sensing temperatures of both α-Fe₂O₃ and γ-Fe₂O₃ are high thanks to their relatively high electrical resistance at RT. However, there are some reports about RT gas sensing features of Fe₂O₃-based sensors. In this review paper, we are discussing those gas sensors in detail. We believe that this review paper can deliver new idea and strategies for design and development of Fe₂O₃ gas sensors with possibility of working at RT.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208223"},"PeriodicalIF":2.7,"publicationDate":"2025-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144123136","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Simulation study of a 1200V 4H–SiC lateral MOSFETs with Double-RESURFs technology for reducing saturation current","authors":"Lijuan Wu,&nbsp;Jiahong He,&nbsp;Zhipeng Shen,&nbsp;Gengbin Zhu,&nbsp;Qiqi Tang,&nbsp;Zongyang Yi,&nbsp;Guanglin Yang,&nbsp;Deqiang Yang","doi":"10.1016/j.micrna.2025.208218","DOIUrl":"10.1016/j.micrna.2025.208218","url":null,"abstract":"<div><div>A 1200V 4H–SiC lateral double-diffused MOSFETs (LDMOS) with embedded auto-adjust JFET (AD-JEFT) and double-reduced surface fields technology is proposed. The AD-JEFT, as the conduction path of electrons from N+ source to the P-well channel, is embedded in P+ well. In the on-state, as the device is pressurized, the increase of depletion charge will reduce the effective channel width of AD-JFET. As a result, the potential barrier of the AD-JFET channel will increase rapidly, making it difficult for electrons to transfer and resulting in a reduction of the saturation current. Compared with the common LDMOS (C-LDMOS), the saturation current (<em>I</em>_dsat) of the proposed LDMOS with AD-JEFT (ADJ-LDMOS) is reduced by 53.3 %. Meanwhile, the short circuit capability is improved by 110.5 %. In addition, the top P-type region of ADJ-LDMOS is divided into a higher doped P-top region and a lower doped P-top2 region, which greatly improves the blocking ability. The breakdown voltage was increased by 21.9 % without increasing the specific on-resistance (<em>R</em>_on,sp).</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208218"},"PeriodicalIF":2.7,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144116808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization of double absorber antimony chalcogenide-based solar cells: A comprehensive parametric optimization to achieve 28.4 % conversion efficiency","authors":"Harshit Saxena ,&nbsp;Jaspinder Kaur ,&nbsp;Rikmantra Basu ,&nbsp;Ajay Kumar Sharma ,&nbsp;Jaya Madan ,&nbsp;Rahul Pandey","doi":"10.1016/j.micrna.2025.208215","DOIUrl":"10.1016/j.micrna.2025.208215","url":null,"abstract":"<div><div>Antimony Chalcogenides have recently gained prominence as preferable substitutes of hybrid halide perovskites for solar cell implementations because of their phase stability, high absorption coefficient, tunable bandgap and enhanced resilience to environmental degradation effects. They are relatively inexpensive and abundant in nature as well. This study focuses on comparing the photovoltaic parameters of the Antimony chalcogenides-based perovskite solar cell (PSC) with a back surface field layer (BSF) with the photovoltaic parameters of cell without BSF layer. While the study aims to analyse the effect of adding a BSF layer, we further refine the device architecture by calibrating parameters including thickness, doping concentrations and defect densities of the various layers incorporated in the device. The proposed model has double absorber layer (Sb₂S₃ and Sb₂Se₃) and incorporates BSF layer (WSe₂) to enhance photo-absorption and increase efficiency of solar cell. The model has been investigated using SCAPS-1D software. The proposed model is p⁺-WSe₂/p-Sb₂S₃/n-Sb₂Se₃/n-WS₂ (With BSF) and p-Sb₂S₃/n-Sb₂Se₃/n-WS₂ (without BSF). The structure without the BSF layer gives an optimized PCE of 25.06 % while the structure with BSF layer gives an optimized PCE of approximately 28.4 %. These optimized structures provide a comprehensive framework for developing non-toxic, durable and highly efficient photovoltaic devices utilizing chalcogenide perovskites. This work also offers valuable insights into bridging the gap between simulation-based approaches and real-world applications while addressing practical challenges in device implementation.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208215"},"PeriodicalIF":2.7,"publicationDate":"2025-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144154394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Compact and energy efficient design of LIF neuron leveraging Zener breakdown for neuromorphic computing","authors":"Faisal Bashir","doi":"10.1016/j.micrna.2025.208208","DOIUrl":"10.1016/j.micrna.2025.208208","url":null,"abstract":"<div><div>In this paper, a single two terminal device (Zener diode) is used to construct a Leaky Integrate and Fire (LIF) neuron with significant improvement in energy efficiency, area and reduction in cost. Using calibrated 2D simulation, it has been confirmed that Zener diode based LIF neuron is able to imitate the neuron actions accurately. The Zener diode shows extremely sharper reverse breakdown voltage, the sharpness in the characteristics is responsible for achieving ultra-low energy per spike. The proposed Zener diode based LIF neuron needs only 86fJ/spike, which is 500 lower compared to recently reported Silicon on Insulator (SOI) based MOSFET, which needs 45pJ/spike of energy. Besides this, the proposed neuron design can be used to obtain neuron oscillation with different frequencies using an input current or capacitor values.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208208"},"PeriodicalIF":2.7,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144138358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and detailed electrical characterization of MoO3 supported Au/n-Si junction diodes","authors":"Zakir Çaldıran ,&nbsp;L. Bilal Taşyürek ,&nbsp;A. Rıza Deniz ,&nbsp;Mehmet Biber","doi":"10.1016/j.micrna.2025.208217","DOIUrl":"10.1016/j.micrna.2025.208217","url":null,"abstract":"<div><div>In this study, the effect of molybdenum trioxide (MoO₃) nanopowder as a thin film layer on the performance of junction diodes was investigated and the fabrication of Au/MoO₃/n-Si/Al device structure with this material was achieved. In the experimental process, Al was thermally deposited on one surface of the silicon wafer and annealed at 450 °C for 10 min to establish an ohmic contact. A thin film of MoO₃ approximately 15 nm thick was deposited on the n-Si surface by thermal evaporation at a 10⁻⁷ Torr high vacuum. On top of this layer, a 100 nm Au layer was deposited by thermal evaporation using a circular mask. The reference Au/n-Si/Al diode was fabricated under identical conditions without the MoO₃ layer to evaluate the influence of the oxide interlayer on the device characteristics. The electrical performance of the devices was characterized through I–V measurements at 300 K. The diode parameters, including the barrier height (BH) and the ideality factor (IF), were extracted using the TE theory and further analyzed using the Cheung and Norde techniques. The BH (Φ_b) and IF (n) values of the reference Au/n-Si/Al diode were calculated as 0.65 eV and 2.06, respectively. In contrast, the diodes with the MoO₃ interlayer exhibited Φ_b values ranging from 0.70 to 0.73 eV and n values between 1.69 and 1.73. The increased IF was attributed to the influence of series resistance, while the variations in BH were related to the properties of the MoO₃/n-Si interface. Among the devices fabricated, the diode with the best performance (referred to as device 2) showed an IF of 1.69 and a BH of 0.73 eV. This device was selected for detailed analysis and its characteristics were further examined using the Cheung and Norde methods. In addition, C–V, G-V, and Z-V measurements at various frequencies were used to derive key device parameters, particularly the BH, highlighting the role of frequency-dependent behavior.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208217"},"PeriodicalIF":2.7,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144105284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tailoring ZnO properties via La Doping: Improved photocurrent and pollutant degradation efficiency","authors":"R. Sai Gowri ,&nbsp;M. Mohamed Roshan ,&nbsp;M. Irfana Amrin ,&nbsp;R.M. Muthukrishnan ,&nbsp;P. Mohammed Yusuf Ansari ,&nbsp;M. Muthu Kathija ,&nbsp;S.M. Abdul Kader","doi":"10.1016/j.micrna.2025.208207","DOIUrl":"10.1016/j.micrna.2025.208207","url":null,"abstract":"<div><div>This study investigates the impact of La³⁺ doping on the structural, optical, magnetic, and photocatalytic properties of ZnO nanoparticles. Pristine and La³⁺ doped ZnO (2 %, 4 %, 6 %) were synthesized via a chemical co-precipitation method and characterized using X-ray diffraction (XRD), UV–visible spectroscopy, Fourier-transform infrared spectroscopy (FTIR), photoluminescence (PL) spectroscopy, scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), and vibrating sample magnetometer (VSM). Rietveld refinement of XRD data confirmed a hexagonal wurtzite structure in all samples, accompanied by strain-induced lattice distortions and atomic displacements due to La³⁺ incorporation. Optical analysis revealed a band gap reduction from 3.12 eV (pristine ZnO) to 2.93 eV for the 2 % La-doped sample, enhancing its visible light absorption. The quenching of PL spectra confirms the increased non-radiative recombination at higher doping levels. Electrochemical studies demonstrated that 2 % doping exhibited the lowest charge transfer resistance, yielding a photocurrent density of 0.36 mA, significantly higher than other concentrations. In photocatalytic testing under natural sunlight, the 2 % La-doped ZnO achieved 90 % degradation efficiency, outperforming other samples. These results underscore the optimized 2 % La-doped ZnO as a promising candidate for environmental remediation and energy harvesting applications.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"206 ","pages":"Article 208207"},"PeriodicalIF":2.7,"publicationDate":"2025-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144123452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Innovative process for the production high-purity zeolites to passivate silicon's surface and bulk to improve electrical parameters","authors":"Wala Medfai ,&nbsp;Marouan Khalifa ,&nbsp;Rabia Benabderrahmane Zaghouani ,&nbsp;Selma Aouida ,&nbsp;Hatem Ezzaouia","doi":"10.1016/j.micrna.2025.208212","DOIUrl":"10.1016/j.micrna.2025.208212","url":null,"abstract":"<div><div>Metal impurities in silicon wafers severely degrade solar cell performance, with typical efficiency losses of 15–30 % due to reduced minority carrier lifetimes. While conventional gettering techniques achieve impurity reduction, they require high temperatures (&gt;850 °C) and can introduce wafer damage. This study demonstrates a novel low-temperature (350 °C) gettering approach using Heulandite-Na (HEU-Na) zeolite layers deposited on porous silicon substrates via sol-gel dip-coating. Microwave photoconductance decay (μW-PCD) measurements revealed that the HEU-Na gettering increased minority carrier lifetime from 1.44 μs to 30.68 μs - a 21-fold improvement that surpasses conventional PDG (typically 3-5x enhancement). Surface photovoltage analysis showed diffusion length improvements from 103.27 μm to 324.16 μm, while Hall effect measurements demonstrated a mobility increase from 209.49 to 732.93 cm²V⁻¹s⁻¹. The dual functionality of HEU-Na as both a gettering and passivation layer, combined with its low-temperature processing, offers a cost-effective and industry-scalable approach for improving silicon solar cell efficiency. This method's effectiveness at temperatures below 400 °C makes it particularly valuable for advanced cell architectures where high-temperature processing must be avoided. The findings demonstrate the potential of zeolite-based gettering to revolutionize silicon purification in both photovoltaic and semiconductor industries, potentially reducing manufacturing costs while improving device performance.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208212"},"PeriodicalIF":2.7,"publicationDate":"2025-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144098558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Surface plasmon resonance sensor for milk adulteration detection using a CaF2 prism, Ag film, and black phosphorus layer","authors":"Mohan Kumar Paswan,&nbsp;Rikmantra Basu","doi":"10.1016/j.micrna.2025.208193","DOIUrl":"10.1016/j.micrna.2025.208193","url":null,"abstract":"<div><div>We propose a novel surface plasmon resonance (SPR) sensor comprising a calcium fluoride (CaF₂) prism, silver (Ag) film, and black phosphorus (BP) layer for assessing milk quality and detecting adulteration. The sensor operates by measuring refractive index (RI) changes in adulterated milk samples placed on the BP layer. The CaF₂ prism, configured in the Kretschmann setup, facilitates the generation of surface plasmons in the Ag film. The resonance characteristics are calculated using the transfer matrix method (TMM). Refractive indices for CaF₂ and Ag are derived using the Sellmeier equation and Lorentz-Drude model, respectively, at a wavelength of 662 nm. Our proposed design, using the CaF₂ prism, achieves a sensitivity of 574°/RIU for RI variations between 1.331 and 1.336 (<span><math><mrow><mi>Δ</mi><msub><mrow><mi>n</mi></mrow><mrow><mi>s</mi></mrow></msub><mo>=</mo><mn>0</mn><mo>.</mo><mn>005</mn></mrow></math></span>), representing a significant improvement of 98.62% compared to the 289°/RIU sensitivity obtained with a BK7 prism under similar conditions. This enhancement demonstrates the superior performance of CaF₂ over BK7 in SPR-based sensing. To optimize performance, the thicknesses of the Ag and BP layers are systematically adjusted. The results are benchmarked against recent metal-membrane-based SPR sensors, demonstrating superior performance. This innovative design holds significant potential for precise milk quality assessment.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"205 ","pages":"Article 208193"},"PeriodicalIF":2.7,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144069489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}