Micro and Nanostructures最新文献

{"title":"DFT based study to sense harmful gases (NH3, AsH3, BF3, BCl3) using Scandium Nitride monolayer for sensing device applications","authors":"Pratham Gowtham ,&nbsp;Mandar Jatkar","doi":"10.1016/j.micrna.2025.208100","DOIUrl":"10.1016/j.micrna.2025.208100","url":null,"abstract":"<div><div>In this study, we investigate the structural stability and electronic properties of zigzag Scandium Nitride Nanoribbon (ZScNNR) configurations, with a particular emphasis on their application in detecting toxic gases such as NH₃, AsH₃, BF₃, and BCl₃. Our comprehensive analysis reveals that all studied ZScNNR gas configurations exhibit semiconductor-like behavior except BCl₃, as evidenced by their calculated band structures and density of states (DOS). Among these configurations, the Bare-ZScNNR-6 configuration emerges as the most thermodynamically stable. Furthermore, the configurations involving AsH₃ at width 2 are energetically favorable (-2.57eV). Importantly, the study highlights the remarkable selectivity of AsH₃ on BF₃ i.e 2.5. It shows their potential as effective nanosensors. In particular, the BCl₃ and NH₃ ZScNNR-6 configurations demonstrate an impressive response time of just 7.7 microseconds, establishing them as highly efficient sensor options. These findings underscore the significant potential of ZScNNR-based nanosensors for rapid and selective toxic gas detection, paving the way for their integration into advanced nanoscale sensing devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208100"},"PeriodicalIF":2.7,"publicationDate":"2025-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143445926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evaluation of random process fluctuation and geometry dependence in nanosheet reconfigurable transistor","authors":"Chao Wang ,&nbsp;Jianing Zhang ,&nbsp;Ziyu Liu ,&nbsp;Xiaojin Li ,&nbsp;Yanling Shi ,&nbsp;Shaoqiang Chen ,&nbsp;Fei Lu ,&nbsp;Xinyu Dong ,&nbsp;Yang Shen ,&nbsp;Yabin Sun","doi":"10.1016/j.micrna.2025.208097","DOIUrl":"10.1016/j.micrna.2025.208097","url":null,"abstract":"<div><div>This study presents the first comprehensive evaluation of the impact of random process fluctuations on the electrical characteristics of nanosheet Reconfigurable FETs (NS-RFETs), and the geometry dependence including nanosheet width (<span><math><msub><mrow><mi>W</mi></mrow><mrow><mi>N</mi><mi>S</mi></mrow></msub></math></span>) and thickness (<span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>N</mi><mi>S</mi></mrow></msub></math></span>) are also investigated. Utilizing MATLAB and 3-D TCAD simulations, this research addresses three key fluctuation sources such as work function variation (WFV), gate edge roughness (GER) and line edge roughness (LER) including line width roughness (LWR) and line height roughness (LHR). It reveals that the variation of <span><math><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub></math></span> is the most influenced among all Figures of Merit (FoMs) and is predominantly affected by LWR and WFV at the control gate, due to the unique Schottky barrier tunneling mechanism in RFETs. WFV is the decisive factor for the variation of <span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>T</mi><mi>H</mi></mrow></msub></math></span> and SS. Generally, smaller geometry parameter leads to deterioration in the variation of <span><math><msub><mrow><mi>V</mi></mrow><mrow><mi>T</mi><mi>H</mi></mrow></msub></math></span> and <span><math><mrow><mi>S</mi><mi>S</mi></mrow></math></span>, and <span><math><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub></math></span> is influenced more significantly. During the shrinkage of <span><math><msub><mrow><mi>W</mi></mrow><mrow><mi>N</mi><mi>S</mi></mrow></msub></math></span>, the impact of LWR becomes more dominant on <span><math><msub><mrow><mi>I</mi></mrow><mrow><mi>O</mi><mi>N</mi></mrow></msub></math></span> and when <span><math><msub><mrow><mi>T</mi></mrow><mrow><mi>N</mi><mi>S</mi></mrow></msub></math></span> decreases, WFV becomes more dominant. And LWR and WFV still deserves special attention as the geometry scales down. The results also indicate that enhancing the uniformity of metal grain of metal gate and reducing the RMS of LWR and LHR can mitigate electric performance fluctuations.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208097"},"PeriodicalIF":2.7,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143454928","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Fabrication of bifunctional counter electrode materials for quantum dot sensitized solar cells by using rGO/1T-MoS2 nano composite","authors":"Bayisa Batu Kasaye,&nbsp;Megersa Wodajo Shura,&nbsp;Solomon Tiruneh Dibaba","doi":"10.1016/j.micrna.2025.208099","DOIUrl":"10.1016/j.micrna.2025.208099","url":null,"abstract":"<div><div>The metallic molybdenum disulfide (1T-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>) has recently been recognized as a promising counter electrode (CE) material for quantum dot-sensitized solar cells (QDSSCs). However, its poor structural stability has limited its broader application. Herein to address this challenge, diatomic selenium (Se) and nickel (Ni) were doped into MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> to facilitate the phase conversion of 2H-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> to 1T-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>. This doped material was then integrated with reduced graphene oxide (rGO) via a hydrothermal method to develop a bifunctional Ni-Se-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>/rGO CE material for QDSSCs. The nanocomposite was characterized using XRD, SEM, FTIR, UV–vis spectroscopy, and electrochemical techniques, confirming the successful formation of the rGO/1T-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> nanostructure. SEM images revealed Ni-Se-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> loosely packed onto rGO sheets, and the XRD pattern confirmed the presence of the 1T-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>/rGO composite. Electrochemical impedance spectroscopy and cyclic voltammetry demonstrated excellent electrochemical properties, including a low charge transfer resistance (8.52 <span><math><mi>Ω</mi></math></span>) and a high electrochemical surface area. Tauc plot analysis showed a reduced bandgap of 1.8 eV for Ni-Se-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>/rGO compared to 2.0 eV for Ni-Se-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>. These improvements significantly enhance electron lifetime, charge transfer, and charge separation, resulting in superior overall performance of QDSSCs. This study highlights Ni-Se-MoS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>/rGO as a highly efficient and stable photovoltaic CE material for QDSSCs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208099"},"PeriodicalIF":2.7,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143437436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"ZnO/MgO Schottky ultraviolet photodetector with high on/off ratio","authors":"Jiaojiao Liu ,&nbsp;Qiuliang Zhong ,&nbsp;Cheng Wu ,&nbsp;Zhenbo Chen ,&nbsp;Xiaoming Yu ,&nbsp;Xuan Yu ,&nbsp;Hai Zhang ,&nbsp;Yu Cao ,&nbsp;Zhenhua Li ,&nbsp;Qian Qiao ,&nbsp;Yingtang Zhou","doi":"10.1016/j.micrna.2025.208105","DOIUrl":"10.1016/j.micrna.2025.208105","url":null,"abstract":"<div><div>Low-cost, high-performance zinc oxide (ZnO) Schottky ultraviolet (UV) photodetectors (PDs) have garnered significant interest. However, due to the existence of defect states in solution-processed ZnO, the reduced carrier mobility limits the device's performance and further application. In this study, Schottky UV PDs were successfully prepared based on the ZnO/MgO composite films. The ZnO/MgO composite film's surface has a “gully” appearance when compared to the original ZnO thin films. The accumulation of uniform-sized grains creates irregular strip bumps, which increases the film's surface area and, consequently, its overall quality. The composite film exhibits excellent UV light absorption from 330 to 360 nm, and the reduced internal resistance results in fewer defects facilitating carrier migration. These superior characteristics significantly improve the device's photoelectric performance. It is worth noting that the device on/off ratio increases by 39 times (from 2.77 to 111.46), the noise equivalent power (NEP) and the normalized detectivity (D∗) decrease and increase by one order of magnitude, respectively, as the applied voltage increases from 1 to 2 V. Furthermore, the responsivity is improved by 3 times (from 0.46 to 1.88 mA W⁻¹), and response time is reduced by 42 %. This work provides a new idea for developing high-performance ZnO Schottky UV photodetectors.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208105"},"PeriodicalIF":2.7,"publicationDate":"2025-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143437504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Impact of multi-quantum well growth pressure on GaN-based blue laser diodes","authors":"Zhenyu Chen ,&nbsp;Feng Liang ,&nbsp;Degang Zhao ,&nbsp;Zongshun Liu ,&nbsp;Jing Yang ,&nbsp;Ping Chen","doi":"10.1016/j.micrna.2025.208103","DOIUrl":"10.1016/j.micrna.2025.208103","url":null,"abstract":"<div><div>This study investigates the influence mechanism of growth pressure during Multiple Quantum Well (MQW) Metalorganic Chemical Vapor Deposition (MOCVD) growth in GaN-based blue laser diodes (LDs). Elevated growth pressure demonstrates an enhancement in LD output performance, seen in both slope efficiency and threshold current, accompanying kinks in P–I curves. To explain these differences in LD performance, we further explore the impact of growth pressure on MQW qualities. Two important influence mechanisms are discussed in detail. concerning indium incorporation during InGaN growth, adatom mobilities are effectively controlled by growth pressure directly during MOCVD growth. We found that higher growth pressure, contributing to rather lower adatom mobilities, facilitates indium incorporation into InGaN MQWs effectively. But excessively high pressure induces severe indium segregation, leading to poor luminescence homogeneity, thus responsible for the observed kinks in P–I curves. Secondly, in regard to crystalline quality of MQWs, impact of interfaces and defects is explored. Lower growth pressure may deteriorate interface quality and trigger more carbon impurity contamination, which are responsible for lower output efficiency that the LDs grown under lower growth pressure exhibit. As a result, we improved the slope efficiency of LD by 30∼40 % successfully by controlling growth pressure during MQW epitaxy.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208103"},"PeriodicalIF":2.7,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143474307","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A novel p-GaN HEMT with superjunction silicon substrate for improved current collapse","authors":"Bo-Ming Feng,&nbsp;Ying Wang,&nbsp;Cheng-hao Yu,&nbsp;Hao-min Guo","doi":"10.1016/j.micrna.2025.208102","DOIUrl":"10.1016/j.micrna.2025.208102","url":null,"abstract":"<div><div>AlGaN/GaN HEMTs suffer from severe current collapse problems due to the large number of bulk traps within their semi-insulating buffer layer. In this work, a novel p-GaN AlGaN/GaN HEMT with a superjunction silicon substrate is proposed to reduce the buffer-induced current collapse of the device. The buffer-related trapping process of the proposed HEMT was investigated by applying negative V_Sub stress since the surface trapping effect is almost negligible in this case. Under negative V_Sub stress, the superjunction substrate acts like a protective layer for the buffer layer compared to the conventional silicon substrate: it reduces the number of electrons captured within the buffer layer during V_Sub stress by reducing the electric field strength inside the buffer layer and reducing the supply of electrons within the buffer layer. After the V_Sub stress is removed, the reduction in the number of captured electrons in the buffer layer leads to a reduction in the residual negative buffer potential, which in turn leads to a weakening of the depletion effect of the residual buffer potential on the 2DEG. Comparing the simulation results of the proposed HEMT with those of the conventional HEMT, it is demonstrated that the buffer-induced degradation of saturation drain current of the proposed HEMT is effectively suppressed.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"201 ","pages":"Article 208102"},"PeriodicalIF":2.7,"publicationDate":"2025-02-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143445925","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Recent advancements in high efficiency deep blue organic light emitting diodes","authors":"S. Sreejith ,&nbsp;J. Ajayan ,&nbsp;N.V. Uma Reddy ,&nbsp;M. Manikandan ,&nbsp;S. Umamaheswaran ,&nbsp;N.V. Raghavendra Reddy","doi":"10.1016/j.micrna.2025.208101","DOIUrl":"10.1016/j.micrna.2025.208101","url":null,"abstract":"<div><div>OLEDs (organic LEDs) are thought to be the most competitive alternative for next-generation transparent and flexible displays. Due to its unique characteristics, which include enhanced efficiency, lesser cost, ease of processing, and flexibility, OLEDs have drawn a lot of attention and have already been put to use in flat-panel full-colour displays and in systems of solid lighting-state. Solid-state-lighting and full-colour displays both benefit greatly from the use of efficient blue OLEDs. Deep blue (DB) emitting substances, in particular, not just serve as a donor of energy for low-energy dopants to create green, white and red, but they also improve the colour spectrum and lower the amount of power used. However, low efficiency and limited working lifetime of DB-OLEDs limit their suitability for commercial use in comparison to green &amp; red-light OLEDs. Because of their inherent large band-gap, DB materials continue to lag significantly behind green &amp; red organic emitters in terms of quantum-efficiency (QE), colour quality, and charge mobility, making the creation of extremely effective DB fluorescent substances an urgent and challenging research topic. This review article examines the structural designs and materials used in DB-OLED fabrication that enhance their efficiency and stability along with the challenges in their fabrication, and their future application prospects.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"200 ","pages":"Article 208101"},"PeriodicalIF":2.7,"publicationDate":"2025-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403283","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Stride potential of CZGS/CZGSe quantum dot solar cell influence of nano-structured all-around-barriers","authors":"Smruti Ranjan Mohanty ,&nbsp;Chandrasekar Palanisamy ,&nbsp;Sudarsan Sahoo ,&nbsp;Soumyaranjan Routray","doi":"10.1016/j.micrna.2025.208083","DOIUrl":"10.1016/j.micrna.2025.208083","url":null,"abstract":"<div><div>The Use of Quantum Dots (QDs) in solar cells are emerging because of their eco-friendly, cheaper and better electrical and optical characteristics. Kesterite based Quantum dot solar cells(QDSC) face critical challenges towards the width and thickness of QDs layer to enhance photo absorption and overall efficiency. An efficient engineering of all around barrier QD solar cell (AABQD) utilizing Nano structures may improve the overall performance in QDSC. The goal is to explore the performance of QDSC by varying QD layer (CZGS/CZGSe) thickness from 5 nm to 15 nm and width of the QDs (CZGSe) varies from 50 nm to 150 nm. A thin barrier layer (CZGS) of 5 nm is inserted between each QD layers that coupled with electrical and optical performance. The behavior of carrier quantization changes when QDs are surrounded by barriers from all sides. The confinement and escape of the carrier are more pronounced compared to normal QD structure. The remarkable efficiency of 18.45% and Voc of 1.103v are obtained in AAQBD Solar cell as compared to efficiency 15.3% and Voc of 1.075V in traditional QDs Solar cell.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"200 ","pages":"Article 208083"},"PeriodicalIF":2.7,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143372156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Growth of Al–Cu compound thin film on Si substrate: Molecular dynamics simulation","authors":"M. Lablali ,&nbsp;H. Mes-adi ,&nbsp;M. Mazroui","doi":"10.1016/j.micrna.2025.208098","DOIUrl":"10.1016/j.micrna.2025.208098","url":null,"abstract":"<div><div>In this study, we have used molecular dynamics simulations to investigate the growth mechanisms of the <span><math><mrow><mtext>AlCu</mtext></mrow></math></span> thin film deposited on a Si (001) substrate with different Al:Cu ratios of (1:1, 2:1, 1:2). The interactions between Al, Cu, and Si atoms have been described using the Modified Embedded Atom Method (MEAM). In this study, we investigate how the different Al–Cu compositions and incident energies affect the morphological, structural, and mechanical characteristics. Our results show that the growth occurs via an island growth mode. At 0.1 eV, the deposited film exhibits a surface containing islands under different Al:Cu ratios. However, the islands gradually disappear as the incident energy increases to 0.4 eV. According to the RDF results, the film maintains its amorphous structure despite film composition and incident energy changes. On the other hand, in terms of interdiffusion, the Al atoms penetrate deeper into the substrate than the Cu atoms. Additionally, as the incident energy increased, the rate of penetration intensified. This increase in incident energy also affects the lattice distortion positions within the substrate matrix and internal stress development. Moreover, <span><math><mrow><msub><mtext>Al</mtext><mn>2</mn></msub><mtext>Cu</mtext></mrow></math></span> exhibits elevated normal stress values compared to the other studied compositions of Al:Cu.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"200 ","pages":"Article 208098"},"PeriodicalIF":2.7,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143377499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Performance and Reliability Investigation of Mg2Si based Tunnel FET under Temperature Variations for High-Sensitivity Applications","authors":"Bandi Venkata Chandan,&nbsp;Kaushal Kumar Nigam,&nbsp;Adil Tanveer","doi":"10.1016/j.micrna.2025.208084","DOIUrl":"10.1016/j.micrna.2025.208084","url":null,"abstract":"<div><div>Fabrication complexity, low ON-current, and reliability challenges are significant concerns for Tunnel FETs in the semiconductor industry. This study addresses these issues by conducting systematic numerical simulations to introduce a novel N<span><math><msup><mrow></mrow><mrow><mo>+</mo></mrow></msup></math></span>-based Magnesium Silicide tunneling interface (Mg₂Si-N<span><math><msup><mrow></mrow><mrow><mo>+</mo></mrow></msup></math></span>-TFET). Utilizing Mg₂Si in the source region enhances key figures of merit (FOMs), such as ON-current, V<span><math><msub><mrow></mrow><mrow><mi>T</mi><mi>H</mi></mrow></msub></math></span>, SS, and the switching ratio, due to its low bandgap, which reduces the tunneling barrier. To optimize the device for low-power and high-speed applications, it is essential to assess its reliability under various constraints. Consequently, this study evaluates the Mg₂Si-N<span><math><msup><mrow></mrow><mrow><mo>+</mo></mrow></msup></math></span>-TFET thermal performance over a temperature range of 250 K to 450 K and exhibits less sensitivity, making it a promising candidate for low-power switching and biosensing applications, even at elevated temperatures.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"200 ","pages":"Article 208084"},"PeriodicalIF":2.7,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143372155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}