Micro and Nanostructures最新文献_第4页

Influence of electric and magnetic fields on the nonlinear optical rectification of a shallow donor in four-quantum dot structures 电场和磁场对四量子点结构中浅层供体非线性光学整流的影响

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Micro and Nanostructures Pub Date : 2025-09-10 DOI: 10.1016/j.micrna.2025.208346

R. Arraoui , M. Jaouane , A. Ed-Dahmouny , A. Fakkahi , K. El-Bakkari , H. Azmi , A. Mazouz , A. Sali

{"title":"Influence of electric and magnetic fields on the nonlinear optical rectification of a shallow donor in four-quantum dot structures","authors":"R. Arraoui , M. Jaouane , A. Ed-Dahmouny , A. Fakkahi , K. El-Bakkari , H. Azmi , A. Mazouz , A. Sali","doi":"10.1016/j.micrna.2025.208346","DOIUrl":"10.1016/j.micrna.2025.208346","url":null,"abstract":"<div><div>The current study investigates the contribution of external electric and magnetic fields on the nonlinear optical rectification (NOR) in a system composed of four <span><math><mrow><mi>G</mi><mi>a</mi><mi>A</mi><mi>s</mi></mrow></math></span> quantum dots situated in an <span><math><mrow><msub><mrow><msub><mrow><mi>A</mi><mi>l</mi></mrow><mi>α</mi></msub><mi>G</mi><mi>a</mi></mrow><mrow><mn>1</mn><mo>−</mo><mi>α</mi></mrow></msub><mi>A</mi><mi>s</mi></mrow></math></span> matrix, taking into account the presence of a shallow donor impurity bound to an electron. The subband energy levels, geometric factors, and corresponding wave functions are determined through the solution of the Schrödinger equation using the finite element method. Our main results show that x-polarised incident light induces stronger second-order nonlinear optical impacts in the studied four-quantum-dot system compared to y and z polarization. Also, the outcomes suggest that the electric field (E-field) significantly alters the NOR response by breaking spatial symmetry and shifting both the amplitude and energy of the peaks. Magnetic fields further enhance the NOR response, particularly at positions of strong electron localization. These findings demonstrate the high tunability of nonlinear optical properties in coupled quantum dot systems and support their application in advanced optoelectronic devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"208 ","pages":"Article 208346"},"PeriodicalIF":3.0,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145049560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Room temperature gas sensors based on MOF-derived metal oxides: An overview 基于mof衍生金属氧化物的室温气体传感器：综述

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Micro and Nanostructures Pub Date : 2025-09-09 DOI: 10.1016/j.micrna.2025.208338

M. Hjiri , N. Benmansour , Fatemah M. Barakat , G. Neri

{"title":"Room temperature gas sensors based on MOF-derived metal oxides: An overview","authors":"M. Hjiri , N. Benmansour , Fatemah M. Barakat , G. Neri","doi":"10.1016/j.micrna.2025.208338","DOIUrl":"10.1016/j.micrna.2025.208338","url":null,"abstract":"<div><div>Resistive gas sensors with high specific surface area (SSA) and porous nature are highly favorable for gas detection studies thanks to providing of numerous anchoring sites for gases and also diffusion channels for fast gas transportation. Metal organic frameworks (MOFs) with crystalline nature and high SSA, and porous nature can be annealed at high temperatures to produce metal oxides with similar morphology of corresponding MOFs. Accordingly, MOF-derived metal oxides are highly promising for sensing applications. Operation at high temperatures leads higher safety related to the detection of explosive gases and longer stability of sensor. Room temperature (RT) operation provides a good opportunity to develop extremely low power consumption gas sensors and also avoid complexity of electronic circuits. Furthermore, agglomeration of sensing material particles can be avoided at RT, leading to better sensing capability. Herein, we describe RT gas sensing features of MOF-derived metal oxides. MOF-derived metal oxides may be in single phase, nanocomposite, doped, and decorated states. We believe that this paper can open new avenues for those actively work in this hot field.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"208 ","pages":"Article 208338"},"PeriodicalIF":3.0,"publicationDate":"2025-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145049720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Numerical and theoretical research on quintuple plasmon-induced transparency based on graphene metamaterial and its multi-function application 基于石墨烯超材料的五元等离子体诱导透明及其多功能应用的数值与理论研究

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Micro and Nanostructures Pub Date : 2025-09-08 DOI: 10.1016/j.micrna.2025.208334

Xiaodong Zeng, Qingwei Zhao, Ke Chen, Yang Yang, Shunyu Yao, Yiping Xu, Xin Huang, Wenxing Yang

{"title":"Numerical and theoretical research on quintuple plasmon-induced transparency based on graphene metamaterial and its multi-function application","authors":"Xiaodong Zeng, Qingwei Zhao, Ke Chen, Yang Yang, Shunyu Yao, Yiping Xu, Xin Huang, Wenxing Yang","doi":"10.1016/j.micrna.2025.208334","DOIUrl":"10.1016/j.micrna.2025.208334","url":null,"abstract":"<div><div>A periodic terahertz metamaterial structure consisting of four concentric graphene square rings and the silicon substrate is proposed. Upon the irradiation of the incident light within the range of the THz band, a quintuple plasma-induced transparency (PIT) effect in the transmission spectrum of the proposed structure is produced. Then, the interaction between bright mode and dark mode acted by different graphene structures and the electric field distributions of the whole structure in the six transmission dip frequencies can well explain the forming physical mechanism of the quintuple-PIT effect. The results obtained by the FDTD numerical simulation agree well with those achieved by the coupling mode theory (CMT) theoretical calculations under different Fermi levels of the monolayer graphene. A set of eight-channel asynchronous switches, a set of nine-channel asynchronous switches, two sets of five-channel synchronous switches and a set of four-channel synchronous switches are obtained by adjusting the Fermi levels of graphene. The maximum modulation depth of these multi-channel optical switches is up to 0.9985, the corresponding insertion loss and extinction ratio reach 0.382 dB and 28.2179 dB, respectively. Moreover, the refractive index sensing characteristics of the whole structure are studied. The obtained maximum values of sensitivity and figure of merit (FOM) are up to 1.151 THz/RIU and 53.5059, separately. Finally, the slow light effect of the whole structure is also studied. The maximum group time delay and the corresponding group refractive index separately reach 2.2211ps and 3331.65. The high-performance and multi-function graphene terahertz metamaterial provides a significant guide for the design of the multi-channel optical switching, optical storage, refractive index sensing devices.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"208 ","pages":"Article 208334"},"PeriodicalIF":3.0,"publicationDate":"2025-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145049723","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

DC/RF performance analysis of vertical Nnanowire FET with dielectric pocket and stacked oxide configuration 具有介电袋和堆叠氧化物结构的垂直纳米线场效应管的DC/RF性能分析

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Micro and Nanostructures Pub Date : 2025-09-07 DOI: 10.1016/j.micrna.2025.208337

Rajat Gulghane , Archana Pandey , Swaroop Kumar Macherla , Kavicharan Mummaneni , Ekta Goel

{"title":"DC/RF performance analysis of vertical Nnanowire FET with dielectric pocket and stacked oxide configuration","authors":"Rajat Gulghane , Archana Pandey , Swaroop Kumar Macherla , Kavicharan Mummaneni , Ekta Goel","doi":"10.1016/j.micrna.2025.208337","DOIUrl":"10.1016/j.micrna.2025.208337","url":null,"abstract":"<div><div>As transistors shrink, the gate oxide must become extremely thin. This leads to a quantum mechanical effect called direct tunneling. This creates a significant gate leakage current which is a major source of power consumption and heat in modern chips. Instead of a single thin layer of Silicon Dioxide (SiO<sub>2</sub>), a stacked oxide and dielectric pocket are used for stronger control of the channel. Hence, this manuscript presents an analysis of a Vertical Nanowire FET device featuring a stacked oxide and dielectric pocket configuration. It demonstrates that the device exhibits improved performance characteristics compared to previously reported data. In this work, the proposed device has been evaluated concerning conventional VNWFET and Dielectric Pocket VNWFET (DP-VNWFET). The device's DC analysis has been conducted, analyzing DC performance metrics such as I<sub>ON</sub>, I<sub>OFF</sub>, I<sub>ON</sub>/I<sub>OFF</sub> ratio, subthreshold swing (SS), and threshold voltage (V<sub>t</sub>) in comparison to existing reported work. Furthermore, the AC/RF performance of the device has been evaluated based on performance metrics such as transconductance (g<sub>m</sub>), output transconductance (g<sub>d</sub>), intrinsic gain, gain-bandwidth product (GBP), cutoff frequency, and transconductance frequency product (TFP). The proposed device exhibits excellent characteristics and proves to be highly suitable for both current and emerging technological advancements.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"208 ","pages":"Article 208337"},"PeriodicalIF":3.0,"publicationDate":"2025-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145049722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High-performance JLCSG MOSFET biosensor considering quantum confinement for multi-region neutral biomolecule species detection 考虑量子约束的高性能JLCSG MOSFET生物传感器用于多区域中性生物分子物种检测

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Micro and Nanostructures Pub Date : 2025-09-06 DOI: 10.1016/j.micrna.2025.208333

Qing-an Ding, Shengyuan Fan, Fangfang Ning, Jianyu Li, Bing Chen, Yandong Peng, Fei Wang, Dasheng Diao, Yuhua Gao

{"title":"High-performance JLCSG MOSFET biosensor considering quantum confinement for multi-region neutral biomolecule species detection","authors":"Qing-an Ding, Shengyuan Fan, Fangfang Ning, Jianyu Li, Bing Chen, Yandong Peng, Fei Wang, Dasheng Diao, Yuhua Gao","doi":"10.1016/j.micrna.2025.208333","DOIUrl":"10.1016/j.micrna.2025.208333","url":null,"abstract":"<div><div>This work demonstrates a high-performance dielectrically modulated biosensor based on short-channel junctionless cylindrical surrounding-gate MOSFET with excellent gate control capability to efficiently suppress the short channel effects (SCEs). Particularly, a novel analytical model incorporating both depleted and free charges has been developed, which significantly enhances detection precision by ensuring high sensitivity and stability across diverse operating regions. Within each region, the quantum confinement effects (QCEs) are rigorously evaluated by solving the Schrödinger equation, revealing the quantized eigenenergies and the corresponding electron density distribution in small-radius channels. Furthermore, the shift in the lowest eigenenergy is leveraged to define a sensitivity metric that directly probes the quantum-level perturbations from biomolecule binding, which effectively amplifies the sensing signal and improves predictive accuracy. Afterwards, the analysis identifies non-ideal incomplete biomolecule hybridization and interface trap charges (ITCs) as the primary sources of performance degradation, providing a clear path for their targeted mitigation. By optimizing the structural parameters guided by key performance metrics and timing response constraints, the proposed device exhibits a superior threshold voltage sensitivity of 0.383 and an exceptionally high current switching ratio of 1 × 10<sup>13</sup>. Therefore, this study is highly suitable for neutral biomolecule detection, even offering robust guidance for the design and multifunctional application of biosensors.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"208 ","pages":"Article 208333"},"PeriodicalIF":3.0,"publicationDate":"2025-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145049559","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Platinum Schottky contacts on chemical vapor deposited two-dimensional monolayer MoS2 nanofilms transferred on polyethylene terephthalate substrate 聚对苯二甲酸乙二醇酯衬底上化学气相沉积二维单层二硫化钼纳米膜的铂肖特基触点

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Micro and Nanostructures Pub Date : 2025-09-05 DOI: 10.1016/j.micrna.2025.208331

Peddathimula Puneetha , Siva Pratap Reddy Mallem , Dong Yeon Lee , Jaesool Shim , Sung Jin An

{"title":"Platinum Schottky contacts on chemical vapor deposited two-dimensional monolayer MoS2 nanofilms transferred on polyethylene terephthalate substrate","authors":"Peddathimula Puneetha , Siva Pratap Reddy Mallem , Dong Yeon Lee , Jaesool Shim , Sung Jin An","doi":"10.1016/j.micrna.2025.208331","DOIUrl":"10.1016/j.micrna.2025.208331","url":null,"abstract":"<div><div>To promote the development of next-generation nano-sized electronics, it is essential to comprehend how electron features function in nanoscale devices, such as those based on two-dimensional transition metal dichalcogenide (2D-TMDC) based on nanofilms. Particularly, monolayer molybdenum disulfide (MoS<sub>2</sub>) devices based on chemical vapor deposited (CVD) were run with low switching voltages and reduced energy consumption. In the present work, we have studied the electrical features of platinum Schottky contacts on monolayer MoS<sub>2</sub> nanofilms transferred on polyethylene terephthalate (PET) substrates using current−voltage (<em>I–V</em>) and capacitance−voltage (<em>C–V</em>) measurements. The mean barrier height (<em>Φ</em><sub><em>b</em></sub>) and mean ideality factor (<em>n</em>) of nanofilm contacts are determined to be 0.68 eV and 2.28 respectively. The values of <em>Φ</em><sub><em>b</em></sub> and series resistance (<em>R</em><sub><em>S</em></sub>) were derived from Cheung's method and are compared with Norde's method. The values obtained are good in accord with one another. Further, the interface state density (<em>N</em><sub><em>SS</em></sub>) distribution was ranged from 1.07 × 10<sup>13</sup> cm<sup>−2</sup>eV<sup>−1</sup> (at 0.44 eV) to 6.24 × 10<sup>12</sup> cm<sup>−2</sup>eV<sup>−1</sup> (at 0.66 eV). According to the results, MoS<sub>2</sub>-based nanofilm Schottky contacts can be applied topically in 2D-TMDCs electronic device applications, which will help and guide future research.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"208 ","pages":"Article 208331"},"PeriodicalIF":3.0,"publicationDate":"2025-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145099889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First-principles investigation of Co2+ and Mn2+ doping in Mg2SnO4: Structural, electronic, optical, thermodynamic, and mechanical properties for advanced phosphor applications Mg2SnO4中Co2+和Mn2+掺杂的第一性原理研究：先进荧光粉应用的结构、电子、光学、热力学和机械性能

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Micro and Nanostructures Pub Date : 2025-09-02 DOI: 10.1016/j.micrna.2025.208323

Naveed Ahmad , Mohamed Hassan Eisa , Muhammad Khan , Xiaohui Sun , Ahmed M. Alkaoud , Katabathini Narasimharao , Muhammad Shahzad

{"title":"First-principles investigation of Co2+ and Mn2+ doping in Mg2SnO4: Structural, electronic, optical, thermodynamic, and mechanical properties for advanced phosphor applications","authors":"Naveed Ahmad , Mohamed Hassan Eisa , Muhammad Khan , Xiaohui Sun , Ahmed M. Alkaoud , Katabathini Narasimharao , Muhammad Shahzad","doi":"10.1016/j.micrna.2025.208323","DOIUrl":"10.1016/j.micrna.2025.208323","url":null,"abstract":"<div><div>In this study, we investigated the structural, electronic, optical, thermodynamic, and mechanical properties of Co<sup>2+</sup> and Mn<sup>2+</sup>-doped Mg<sub>2</sub>SnO<sub>4</sub> phosphors using first-principles calculations. Our results reveal that Co<sup>2+</sup> doping induces semimetallic behavior, while Mn<sup>2+</sup> doping leads to semiconducting properties with a band gap of 0.55 eV. The introduction of Mn<sup>2+</sup> introduces defect states below the conduction band, resulting in n-type conductivity in both spin states. Mn<sup>2+</sup>-doped Mg<sub>2</sub>SnO<sub>4</sub> exhibits exceptional luminescent properties, owing to its small band gap, making it a promising candidate for advanced phosphor applications and optical devices. We also analyzed the optical properties, including dielectric reflection, reflectivity, refractive index, and absorption coefficient, revealing their dependence on photon energy and the electron energy loss spectrum. Additionally, we applied the quasi-harmonic Debye model to calculate key thermodynamic properties, such as Gibbs free energy, Debye temperature, entropy, enthalpy, and thermal expansion coefficient across a range of temperatures (0–1200 K) and pressures (0–10 GPa). The results also provide insights into the interdependence of these thermodynamic parameters under varying conditions. Lastly, our analysis of the mechanical properties indicates that both doped compounds exhibit mechanical stability and ductility, with relatively low stiffness, highlighting their potential for optoelectronics applications, especially in LEDs.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"208 ","pages":"Article 208323"},"PeriodicalIF":3.0,"publicationDate":"2025-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145010715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Graphene-boron nitride-transition metal dichalcogenides heterostructure based MISFET 基于石墨烯-氮化硼-过渡金属二硫化物异质结构的MISFET

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Micro and Nanostructures Pub Date : 2025-09-02 DOI: 10.1016/j.micrna.2025.208320

Shubham Rahi , Rajender Kumar , Sapna Singh , Prasanna Misra , Ganesh C. Patil , Trupti Ranjan Lenka , Ankur Solanki , Anurag Chauhan , Balwinder Raj , Pinku Nath , Sudhanshu Choudhary

{"title":"Graphene-boron nitride-transition metal dichalcogenides heterostructure based MISFET","authors":"Shubham Rahi , Rajender Kumar , Sapna Singh , Prasanna Misra , Ganesh C. Patil , Trupti Ranjan Lenka , Ankur Solanki , Anurag Chauhan , Balwinder Raj , Pinku Nath , Sudhanshu Choudhary","doi":"10.1016/j.micrna.2025.208320","DOIUrl":"10.1016/j.micrna.2025.208320","url":null,"abstract":"<div><div>Stacking of 2D materials has opened new dimensions in the area of Nano-electronics as both optical and electronic properties of the material change significantly by altering number of layers stacked and materials stacked. A vander waal's (vdWH) heterostructure based metal insulator semiconductor field effect transistor (MISFET) with various channel materials like MoS<sub>2</sub>, MoSe<sub>2</sub> and WS<sub>2</sub> is investigated to assess the differences in electronic properties at both material and device levels. The results suggest that amongst all transition metal dichalcogenides (TMDs) channel materials considered, WS<sub>2</sub> has lowest effective mass (for both electron and hole) and highest I<sub>dsat</sub> (saturation current) ∼9.216 × 10<sup>−5</sup> Å/ <span><math><mrow><mi>μ</mi></mrow></math></span> m which suggests the use of WS<sub>2</sub> in making high performance Field Effect Transistors. However, because bulk WS<sub>2</sub> is an indirect bandgap material, it is unsuitable for the fabrication of optical devices. This limitation is addressed by using monolayer WS<sub>2</sub>, which possesses a direct bandgap. The values of I<sub>dsat</sub> for MoS<sub>2</sub> and MoSe<sub>2</sub> based devices are obtained as ∼4.37 × 10<sup>−5</sup> A/ <span><math><mrow><mi>μ</mi></mrow></math></span> m and ∼2.323 × 10<sup>−5</sup> A/ <span><math><mrow><mi>μ</mi></mrow></math></span> m. Furthermore, WS<sub>2</sub> as channel material has lowest threshold voltage ∼1 V in comparison to ∼1.1 V and ∼1.2 V for MoS<sub>2</sub> and MoSe<sub>2</sub> based transistors.</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"208 ","pages":"Article 208320"},"PeriodicalIF":3.0,"publicationDate":"2025-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145010716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A novel thermal network model and electro-thermal coupling study for NSFETs and CFETs considering thermal crosstalk 考虑热串扰的nsfet和cfet热网模型及电热耦合研究

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Micro and Nanostructures Pub Date : 2025-09-02 DOI: 10.1016/j.micrna.2025.208322

Tianci Miao , Qihang Zheng , Yangyang Hu , Xiaoyu Cheng , Jie Liang , Liang Chen , Aiying Guo , Jingjing Liu , Kailin Ren , Jianhua Zhang

{"title":"A novel thermal network model and electro-thermal coupling study for NSFETs and CFETs considering thermal crosstalk","authors":"Tianci Miao , Qihang Zheng , Yangyang Hu , Xiaoyu Cheng , Jie Liang , Liang Chen , Aiying Guo , Jingjing Liu , Kailin Ren , Jianhua Zhang","doi":"10.1016/j.micrna.2025.208322","DOIUrl":"10.1016/j.micrna.2025.208322","url":null,"abstract":"<div><div>As the process node of logic integrated circuits continues to shrink to chase the Moore's Law, nanosheet field effect transistors (NSFETs) and complementary FETs (CFETs) become candidates for the 3 nm and sub-nanometre nodes. However, due to the shrinking device size, self-heating and inter-device thermal crosstalk of NSFETs and CFETs become more severe, leading to degradation of on-state current, threshold voltage shift, and reduced reliability. It is of great significance to accurately calculate the self-heating and thermal crosstalk of devices and to investigate their influences on the electrical and thermal characteristics of logic gates. In this work, a novel thermal network model considering the thermal crosstalk of neighboring devices is proposed, which can accurately calculate the self-heating and thermal crosstalk by introducing a dummy network. The electrical and thermal characteristics of NSFETs and CFETs are compared, and it is found that CFETs suffer more severe self-heating and thermal crosstalk. The electro-thermal characteristics of inverters, logic gates and ring oscillators composed of NSFETs and CFETs are further investigated. Compared with NSFETs, logic gates and ring oscillators composed of CFETs are more seriously affected by self-heating and should be given extra attention. The thermal network model proposed in this work can be further used to study the thermal optimization strategy of devices and circuits to enhance the electrical performances, achieving the design technology co-optimizations (DTCO).</div></div>","PeriodicalId":100923,"journal":{"name":"Micro and Nanostructures","volume":"208 ","pages":"Article 208322"},"PeriodicalIF":3.0,"publicationDate":"2025-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145010713","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Implementation of Leaky Integrate and Fire neuron using Trench gate vertical FBFET (TG-V-FBFET) exploiting its steep subthreshold slope 利用沟槽栅垂直FBFET （TG-V-FBFET）陡峭的阈下斜率实现漏积分和火神经元

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Micro and Nanostructures Pub Date : 2025-09-01 DOI: 10.1016/j.micrna.2025.208311

Zuber Rasool , S. Intekhab Amin , Dinesh Prasad , Mohd Faizan , Naveen Kumar

引用次数: 0