Revolutionizing low-power efficiency: Unveiling the potential of Mg2Ge as source material in double gate vertical TFET design

IF 2.7 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures Pub Date : 2025-05-21 DOI:10.1016/j.micrna.2025.208214

Varun Mishra , Anant Negi , Vikas Rathi , Yogesh Kumar Verma , Chandni Tiwari

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Abstract

Driven by the continuous miniaturization of device geometries and the increasing demand for higher switching speeds to minimize power dissipation, the tunnel field-effect transistor (TFET) presents a viable alternative to the conventional MOSFET. This study undertakes a comprehensive analysis of a Double-Gate Vertical TFET (DG-VTFET) architecture, comparatively evaluating silicon (Si) and magnesium germanide (Mg₂Ge) as source materials. Exploiting the band-to-band tunneling (BTBT) mechanism and, for the first time, employing the low-bandgap material Mg₂Ge (0.69 eV at room temperature, significantly lower than the 1.12 eV bandgap of Si), demonstrably superior performance is achieved compared to a conventional Si-based vertical TFET. Specifically, enhancements are observed in ON-state current (I_ON), average subthreshold swing (SS), threshold voltage (V_th), and current switching ratio, yielding values of 0.04 mA, 35.60 mV/dec, 0.282 V, and 4.405 × 10¹¹, respectively. These results underscore the potential of the Mg₂Ge-based VTFET for low-power applications.

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革新低功耗效率：揭示Mg2Ge作为源材料在双栅垂直TFET设计中的潜力

由于器件几何形状的不断小型化和对更高开关速度以最小化功耗的需求不断增加，隧道场效应晶体管（TFET）提供了传统MOSFET的可行替代方案。本研究对双栅垂直TFET （DG-VTFET）结构进行了全面分析，比较评估了硅（Si）和锗化镁（Mg2Ge）作为源材料。利用带对带隧道（BTBT）机制，并首次采用低带隙材料Mg2Ge（室温下0.69 eV，显著低于Si的1.12 eV带隙），与传统的Si基垂直TFET相比，取得了明显的优越性能。具体来说，在导通电流（ION）、平均亚阈值摆幅（SS）、阈值电压（Vth）和电流开关比方面观察到增强，产生值分别为0.04 mA、35.60 mV/dec、0.282 V和4.405 × 1011。这些结果强调了基于mg2ge的VTFET在低功耗应用中的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Micro and Nanostructures

CiteScore

6.50

自引率

0.00%

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