A compact analytical model for performance parameters of MoS2 channel based thickness engineered TFET

Abstract

An analytical model of a thickness engineered Si-doped MoS₂ asymmetric tunnel field effect transistor, is developed and presented in this article. The solution of Poisson's equation with appropriate boundary conditions is the key element of the proposed analytical model. The surface potential (Ψ_si), lateral and vertical electric fields (E_xi & E_yi), drain current (I_ds), and threshold voltage $\left({\psi }_{s2}\left(L_{t_{\min }}\right)\right)$ are the device parameters for which the models are derived. This study enumerates the first analytical model of a 2D material-based thickness engineered TFET. A very close match with an accuracy value of above 90 % is obtained between simulated results and derived models. The complete device analysis is explained by investigating a variety of biases and channel length. It is observed that, close to the tunneling junction, the proposed Si-doped MoS₂ TFET generates E_xi and E_yi of -3x10⁶ V/μm and +3.5 × 10⁵ V/μm at V_ds = 1V, respectively, and results in a 7.5х10⁻⁶ A/μm drain current.