Linearity analysis of GNR TFETs with pocket engineering for high-performance RFIC applications

IF 3 Q2 PHYSICS, CONDENSED MATTER

Micro and Nanostructures Pub Date : 2025-08-22 DOI:10.1016/j.micrna.2025.208315

Md Akram Ahmad

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Abstract

This work presents a comprehensive analysis of the linearity characteristics of graphene nanoribbon tunnel field-effect transistors (GNR TFETs) with source-end pocket engineering, emphasizing their suitability for advanced radio-frequency integrated circuit (RFIC) applications. The novelty of this study lies in the systematic optimization of the source pocket length and its quantified impact on key linearity figures of merit, including higher-order transconductance coefficients (g_m2, g_m3), second- and third-order intercept points (VIP2, IIP3), 1-dB compression point (1-dB CP), and harmonic distortion metrics (HD2, HD3). Atomistic simulations based on the Non-Equilibrium Green's Function (NEGF) formalism using NanoTCAD ViDES reveal that a 5 nm source pocket significantly enhances linearity by suppressing nonlinear components, improving signal integrity, and reducing intermodulation distortion. Benchmarking against state-of-the-art TFETs confirms the superior performance of the proposed structure, establishing it as a strong candidate for high-linearity, energy-efficient RFIC applications.

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用于高性能RFIC应用的GNR tfet的口袋工程线性分析

本文通过源端口袋工程全面分析了石墨烯纳米带隧道场效应晶体管（GNR tfet）的线性特性，强调了其在先进射频集成电路（RFIC）应用中的适用性。本研究的新颖之处在于系统优化了源口袋长度及其对关键线性度指标的量化影响，包括高阶跨导系数（gm2, gm3），二阶和三阶截距点（VIP2, IIP3）， 1 db压缩点（1 db CP）和谐波失真指标（HD2, HD3）。利用NanoTCAD ViDES进行的基于非平衡格林函数（NEGF）形式的原子模拟表明，5nm源袋通过抑制非线性成分、提高信号完整性和减少互调失真显著提高了线性度。对最先进的tfet进行基准测试，证实了所提出结构的优越性能，使其成为高线性、高能效RFIC应用的有力候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Micro and Nanostructures

CiteScore

6.50

自引率

0.00%

发文量