Linearity analysis of GNR TFETs with pocket engineering for high-performance RFIC applications

This work presents a comprehensive analysis of the linearity characteristics of graphene nanoribbon tunnel field-effect transistors (GNR TFETs) with source-end pocket engineering, emphasizing their suitability for advanced radio-frequency integrated circuit (RFIC) applications. The novelty of this study lies in the systematic optimization of the source pocket length and its quantified impact on key linearity figures of merit, including higher-order transconductance coefficients (g_m2, g_m3), second- and third-order intercept points (VIP2, IIP3), 1-dB compression point (1-dB CP), and harmonic distortion metrics (HD2, HD3). Atomistic simulations based on the Non-Equilibrium Green's Function (NEGF) formalism using NanoTCAD ViDES reveal that a 5 nm source pocket significantly enhances linearity by suppressing nonlinear components, improving signal integrity, and reducing intermodulation distortion. Benchmarking against state-of-the-art TFETs confirms the superior performance of the proposed structure, establishing it as a strong candidate for high-linearity, energy-efficient RFIC applications.