Optical and Quantum Electronics最新文献

{"title":"Design and optimization of high-efficiency lead-free Ag2S/ZrS2 based solar cells: impact of hole transport layers and device engineering","authors":"Akbar Hasan,&nbsp;Md. Faruk Hossain,&nbsp;Mustafa Kareem,&nbsp;Mongi Amami,&nbsp;Lamia Ben Farhat,&nbsp;Tanvir Mahtab Khan,&nbsp;Sheikh Rashel Al Ahmed,&nbsp;Nacer Badi,&nbsp;Md. Ferdous Rahman","doi":"10.1007/s11082-026-09097-4","DOIUrl":"10.1007/s11082-026-09097-4","url":null,"abstract":"<div><p>This work not only establishes Ag₂S-based devices as promising lead-free alternatives but also offers a strategic framework for designing cost-effective, stable, and environmentally sustainable solar cells through rational material selection and structural optimization. This study provides an extensive numerical evaluation of Ag₂S-based photovoltaic (PV) devices incorporating ZrS₂ as a buffer layer and a range of hole transport layers (HTLs) such as V₂O₅, WS₂, SnS, Cu₂O, CsSnI₃, GeSe, WSe₂, and MoS₂. The primary goal is to optimize the structural and electronic parameters to enhance overall solar cell performance. Systematic SCAPS-1D simulations were conducted to assess the influence of absorber layer thickness, doping concentration, and defect density on key photovoltaic characteristics, including power conversion efficiency (<i>PCE</i>), open-circuit voltage (<i>V</i>_OC), short-circuit current density (<i>J</i>_SC), and fill factor (<i>FF</i>). Among the studied HTLs, V₂O₅ exhibited superior electronic compatibility with the Ag₂S absorber, achieving an impressive PCE of 32.44%, FF of 80.89%, J_SC of 43.02 mA/cm², and V_OC of 0.9321 V under optimized conditions- 1 µm absorber thickness, high doping concentration (10¹⁷ cm⁻³), and minimal defect density (10¹⁰ cm⁻³). The optimized parameters for the ZrS₂ buffer were a thickness of 0.05 µm, a donor density of 1×10¹⁸ cm⁻³, and a defect density of 10¹⁴ cm⁻³, while the respective values for the V₂O₅ HTL were 0.25 µm, 5×10¹⁹ cm⁻³ (acceptor density), and 10¹⁴ cm⁻³. WS₂ and SnS also demonstrated notable performance due to their favorable energy level alignment and high carrier mobility. The findings emphasize the importance of interfacial engineering and defect control in achieving efficient charge transport. This work not only establishes Ag₂S-based devices as promising lead-free alternatives but also offers a strategic framework for designing cost-effective, stable, and environmentally sustainable solar cells through rational material selection and structural optimization.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148926590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Highly sensitive PCF‑SPR refractive index sensor using gold/Ti3C2Tx ‑ MXene hybrid layer","authors":"Shraddha Dixit,&nbsp;Akash Khamaru,&nbsp;Deepak Garg,&nbsp;Ajeet Kumar","doi":"10.1007/s11082-026-09127-1","DOIUrl":"10.1007/s11082-026-09127-1","url":null,"abstract":"<div><p>In this research work, a highly sensitive Surface Plasmon Resonance (SPR) based D-shaped Photonic Crystal Fiber (PCF) refractive index (RI) sensor is proposed. The analysis and simulation is done using COMSOL Multiphysics, a Finite Element Method solver. A gold (Au) layer is deposited on a flat surface of a D-shaped PCF, followed by an MXene layer, which boosts the interaction of surface plasmons with biomaterials. The sensor design exhibits a novel Au/MXene hybrid plasmonic structure to further enhance the interaction and advance the performance. The simulation results for the proposed sensor design are evaluated for biologically viable refractive indices varying from 1.31 to 1.36. The parametric analysis is conducted by varying critical structural parameters to ensure optimal biosensor performance is achieved, thereby maximizing sensitivity. Simulation outcomes indicate that the proposed sensor is capable of reaching a maximum wavelength sensitivity of 8000 nm/RIU, thereby establishing its capability to measure minute refractive index changes with high precision. This enhanced sensitivity parameter, in combination with improved amplitude characteristics, makes the proposed sensor a viable alternative for the domains like biomedicine, chemical measurements, and environmental monitoring, where traditional biosensing methods are prone to low refractive sensitivity limits.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148926691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization of photonic waveguide bends for low-index contrast material platforms","authors":"Ritu Jangra,&nbsp;Kushagra Agarwal,&nbsp;Posa Harsha Vardhan,&nbsp;P. K. Nandana,&nbsp;Naresh Kumar Emani","doi":"10.1007/s11082-026-09116-4","DOIUrl":"10.1007/s11082-026-09116-4","url":null,"abstract":"<div><p>Compact and low-loss waveguide bends are vital for enhancing the integration density of on-chip photonic devices. The bend loss becomes extremely critical, particularly for compact bends in low-index-contrast platforms such as Indium Phosphide (InP). To address this issue, we introduce an elliptical width-modulated bend, which exhibits low loss. For example, at 6 <span>(mu)</span>m radius bend loss for elliptical width-modulated bend is 0.22 dB per 90°, resulting in 37% and 24% reduction compared to conventional circular bends and circular width-modulated bends, respectively with only a 15% increase in footprint providing a better loss–area trade-off. Additionally, conventional effective-index-based analytical models do not account for the impact of width modulation. In this work, we develop an enhanced analytical bend-loss formulation that incorporates these effects and validates its accuracy through close agreement with full three-dimensional Finite-Difference Time-Domain (3D-FDTD) simulations. This combined analytical–numerical design strategy offers a robust pathway toward compact, low-loss, and scalable photonic circuit architectures for the next-generation of high-density integration.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148926692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Efficient Cs2SnI2Br2 based 2D Ruddlesden Popper perovskite solar cells: numerical insights into charge transport and band alignment engineering","authors":"Reeta,&nbsp;Shilpi Chaudhary,&nbsp;Vibhor Chaswal,&nbsp;Vivek Kumar,&nbsp;Kamil Monga","doi":"10.1007/s11082-026-09110-w","DOIUrl":"10.1007/s11082-026-09110-w","url":null,"abstract":"<div><p>Two-dimensional Ruddlesden-Popper (2DRP) halide perovskites have emerged as promising absorber materials for perovskite solar cells (PSCs) due to their conveniently modified optoelectronic properties, high power conversion efficiency (PCE), and enhanced durability against environmental influences. In this work, a detailed SCAPS-1D simulation study to optimization of a lead-free, all inorganic 2DRP PSC with Cs₂SnI₂Br₂ as the active photoabsorber layer. The absorber exhibits an optimal bandgap of 1.4 eV, superior electrical conductivity, and thermal stability, thus being making an effective alternative to toxic Pb-based perovskites. A detailed interfacial band alignment analysis highlight that out of four hole transport layers (Cu₂O, CuSCN, CuI, and Spiro-OMeTAD), Cu₂O offers the most favorable valence band offset (-0.26 eV) with Cs₂SnI₂Br₂ that supports effective hole collection and minimize recombination at the interfaces. Additional optimization of device structure FTO/SnO₂/Cs₂SnI₂Br₂/Cu₂O/Ni, confirmed better carrier transport and well matched energy-level, with optimum parameters of absorber thickness (500 nm), acceptor dopant concentration (1 × 10¹⁷cm^− 3), and trap density (1 × 10¹⁴ cm^− 3). The analysis further showed that low series resistance coupled with high shunt resistance enhance charge extraction, while Ni with a work function of 5.5 eV forms a good ohmic contact with Cu₂O, reducing back contact losses. Temperature-dependent analysis gives an activation energy of E_a = 1.49 eV, while C-V/Mott-Schottky analysis confirmed a built-in potential of V_bi =1.2 V for the optimized device. The optimized device reached a PCE of 28.81%, with V_OC = 1.15 V, J_SC = 28.98 mA cm^− 2, and fill factor = 86.04%. The present study offers an in-depth physical insight into energy band alignment coordinated charge carrier transport, defect tolerance, and interfacial realiability in Cs₂SnI₂Br₂-based 2DRP perovskites, offering a feasible design toward efficient, stable, and eco-friendly Pb-free photovoltaic technologies.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148926568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thermally robust ultrafast photodetection based on doping-modulated asymmetric quantum wells","authors":"Itamar Ganan,&nbsp;Michael Bendayan,&nbsp;Avi Karsenty","doi":"10.1007/s11082-026-09117-3","DOIUrl":"10.1007/s11082-026-09117-3","url":null,"abstract":"<div><p>In this work, an asymmetric double quantum well (ADQW) structure is investigated to evaluate the feasibility of its unique operating principle, based on a precise design of the third energy level. Unlike many ultrafast photodetectors that rely on thermally-driven mechanisms−which are inherently sensitive to ambient temperature variations - the proposed ADQW demonstrates intrinsic thermal stability. Although the device exhibits pronounced temperature-dependent effects, the underlying mechanism remains robust and functional over a wide temperature range from 20 K to 293 K. The operation of the structure relies on purely quantum mechanical inter-sub-band transitions (ISBT) and a built-in self-induced electric field (SIEF) generated via doping modulation (DM), enabling a photovoltaic effect with an ultrafast response. Consequently, by overcoming the limitations of thermal instability, this nanoscale structure represents a highly adaptable and promising electro-optic component for effective integration with broader electronic and optoelectronic systems.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148926592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comprehensive investigation of structural, thermal, and optical properties of Sm3+ activated strontium lithium borosilicate glasses for orange luminescent applications","authors":"Kapil Kumar,&nbsp;Isha Malik,&nbsp;Vikas Sangwan,&nbsp;Shalu Redhu,&nbsp;Sonia Kundu,&nbsp;Nidhi Thakan,&nbsp;Nisha Deopa","doi":"10.1007/s11082-026-09118-2","DOIUrl":"10.1007/s11082-026-09118-2","url":null,"abstract":"<div><p>In the present work samarium doped strontium lithium borosilicate glasses were prepared by using melt quenching technique incorporating different concentrations of samarium ions. The amorphous nature was confirmed by XRD technique. The FT-IR spectra indicates the presence of BO₃ and BO₄ units based on their stretching vibrations and the extra related bonding nature. The glass transition temperature (T_g) of as-prepared glass samples was determined using the Differential scanning calorimetry (DSC) data. From absorption spectra, the optical band gap and Urbach energy observed to decrease with increasing Sm³⁺ concentration, with nephelauxetic ratios hinting at mostly covalent Sm–O bonds. The optical features were analyzed using the band gap values derived from the Tauc plot. Judd–Ofelt (J–O) theory was applied to evaluate the phenomenological intensity parameters (Ω₄ &gt; Ω₆ &gt; Ω₂) showing the highest value of Ω₄ implying strong Sm–O bonding. The PL Spectra showing four emission bands corresponding to the transition ⁴G_5/2→⁶H_5/2, ⁶H_7/2, ⁶H_9/2, ⁶H_11/2. Dexter theory and the Inokuti–Hirayama (I–H) model were employed to investigate the interactions involved in the non-radiative energy transfer process. The CIE coordinates (x, y) and CCT values were calculated from the PL emission data, and the results indicate that the glasses exhibit emission in the reddish–orange region. Temperature-dependent Photoluminescence (TDPL) also confirmed a progressive increase in structural rigidity of the glass network and chromatic stability under thermal stress up 175 °C. The Time Resolved Photoluminescence (TRPL) technique helps to find out the average lifetime (τ_avg) of the samples, which decreases significantly with the increase in concentration of Sm³⁺. Overall, the as-prepared glass samples are found to be reliable and suitable candidates for reddish-orange luminescent devices and as a potential red-emitting component in w-LEDs.</p><h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148926593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation and performance enhancement of a 100 km 1550 nm VCSEL-based optical link using hybrid DCF-FBG-assisted chirp compensation","authors":"Baseerat Gul","doi":"10.1007/s11082-026-09126-2","DOIUrl":"10.1007/s11082-026-09126-2","url":null,"abstract":"<div><p>Directly modulated Vertical Cavity Surface Emitting Lasers (VCSELs) operating at 1550 nm are attractive optical sources due to their low power consumption, low threshold current, and ease of integration. However, their application in long haul optical communication systems is limited by their frequency chirp, which significantly enhances chromatic dispersion and hence induces signal degradations. This work investigates the use of Fiber Bragg Grating (FBG) based chirp compensation to improve the transmission characteristics of a 10 Gbps VCSEL link over 100 km of single mode fiber (SMF). Three transmission configurations were designed and analysed using OptiSystem, including a conventional Dispersion Compensating Fiber (DCF)-compensated link and two FBG-assisted architectures. The impact of VCSEL chirp on spectral broadening and transmission quality was evaluated through optical spectrum, eye-diagram, BER, Q-factor and received signal power analyses. An FBG was employed to compensate chirp-induced impairments and optimize signal propagation over the long haul fiber span. The results show that the conventional DCF-only configuration provides inadequate performance, whereas the inclusion of an FBG significantly enhances signal quality. The best performance was achieved when the FBG was positioned before the transmission fiber, yielding a Q-factor of approximately 9.39 and a BER in the order of 10⁻²¹ while reducing the required DCF length from 24 to 10 km. The proposed work demonstrates that the FBG-based chirp compensation is an effective technique for extending the transmission reach of the directly modulated 1550 nm VCSELs, making them promising solutions for future high-speed optical communication networks.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148926591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"In situ growth of Bi2S3/Bi2MoO6/WO3 double type-II heterojunction for enhanced Cr(VI) reduction: experimental and DFT study","authors":"Yake Wang,&nbsp;Yuan Cheng,&nbsp;Hongwei Wang,&nbsp;Minghui Tan,&nbsp;Pengyu Zhang,&nbsp;Tong Zhang,&nbsp;Zhiping Mao,&nbsp;Xinli Li,&nbsp;Jinping Zhang","doi":"10.1007/s11082-026-09109-3","DOIUrl":"10.1007/s11082-026-09109-3","url":null,"abstract":"<div><p>Tungsten trioxide (WO₃) is a widely used semiconductor photocatalyst for environmental photocatalytic remediation, but its practical application is severely limited by inherent drawbacks: wide band gap, poor visible light response, and rapid recombination of photogenerated electron-hole pairs. In this study, a Bi₂S₃/Bi₂MoO₆/WO₃ double type-II heterojunction heterojunction photocatalytic film was rationally fabricated through a sequential hydrothermal-solvothermal-in-situ growth strategy. Bi₂S₃ quantum dots were uniformly loaded on the Bi₂MoO₆/WO₃ hierarchical structure, forming a ternary heterojunction with tight interfacial contact and efficient charge transfer channels. The photoelectrochemical and photocatalytic performance of the as-prepared material was optimized by tuning the in-situ growth time of Bi₂S₃. The optimal BS/BMO/WO₃(1 h) sample has an extended light absorption range up to 700 nm, a high transient photocurrent density of 46 µA·cm^− 2, and effectively improved separation and transport efficiency of photogenerated carriers. Under simulated sunlight irradiation at pH = 3, this sample achieved a 74.4% reduction efficiency for 5 mg/L Cr(VI) solution, which is 4.91 times that of pure WO₃. Density functional theory (DFT) calculations confirmed that the double type-II heterojunction drives directional migration of photogenerated carriers through the combined effect of built-in electric field and band bending. This work provides a new and feasible strategy for constructing high-performance WO₃-based photocatalysts for environmental pollution control.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148926690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"SCAPS-1D simulation of all –perovskite tandem solar cells: a comparative analysis of lead-free CsBi3I10 top-cell with low-lead MAPbI1-xClx and FAPbI3 bottom-cell configurations for enhanced efficiency","authors":"Vinitha B. Elza,&nbsp;Nelsa Abraham,&nbsp;V. Suresh Babu,&nbsp;Sahaya Dennish Babu George,&nbsp;S. Aseena","doi":"10.1007/s11082-026-09075-w","DOIUrl":"10.1007/s11082-026-09075-w","url":null,"abstract":"<div><p>The efficiency of solar cells is primarily constrained by intrinsic factors even when optimal fabrication methods are adopted. Tandem solar cells have captivated the research community by providing higher efficiencies and utilizing sun spectrum effectively, owing to their unique structure. This work presents a numerical analysis of highly efficient all-perovskite tandem solar cells using lead-free CsBi₃I₁₀(band gap 1.75 eV) and low-lead mixed halides MAPbI₁-_x Cl_x (band gap 1.55 eV) and FAPbI₃ (band gap 1.61 eV) perovskites via SCAPS-1D simulations. The performance of three tandem structures are evaluated: Structure 1 (STR1) with TiO₂ (ETM)/CsBi₃I₁₀/Cu₂O (HTM) as the Top-cell and TiO₂ (ETM)/MAPbI₁-_x Cl_x /Cu₂O (HTM) as Bottom-cell), Structure 2 (STR2) with ZnO (ETM)/CsBi₃I₁₀/CuSCN (HTM) as the top-cell and TiO₂ (ETM)/MAPbI₁-_x Cl_x/CuSCN (HTM) as Bottom-cell and Structure 3 (STR3) with TiO₂ (ETM)/CsBi₃I₁₀/Cu₂O (HTM) as the Top-cell and TiO₂(ETM)/FAPbI₃/Cu₂O (HTM) as bottom-cell. The key photovoltaic parameters including short-circuit current (Jsc), open-circuit voltage (Voc), power conversion efficiency (PCE) and fill factor (FF) were calculated for all device structures. In addition, the wavelength-dependant quantum efficiency was plotted, and a comprehensive analysis was performed to assess how variations in perovskite layer thickness, ETL/HTL acceptor and donor concentrations and perovskite layer defect density influence overall tandem cell performance. Optimization was carried out to enhance device efficiency. The simulation results show that STR1 and STR2 achieves PCE’s of 36.80% and 36.067% using CsBi₃I₁₀/MAPbI_1-xCl_x as top /bottom perovskite layers, while STR3 reaches 37.786% with CsBi₃I₁₀/FAPbI₃. These results demonstrate the potential of lead-free and low-lead perovskite combinations for developing high efficiency all–perovskite tandem solar cells.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148928111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interfacial band engineering of lead-free CaZrSe3 chalcogenide perovskite solar cells with compositionally tuned Cd1₋xZnxS electron transport layers","authors":"Tanveer Ahmad,&nbsp;Khurshid Alam,&nbsp;Júlia Marí Guaita,&nbsp;Yousaf Hameed Khattak,&nbsp;Faisal Baig,&nbsp;Bernabé Marí Soucase","doi":"10.1007/s11082-026-09101-x","DOIUrl":"10.1007/s11082-026-09101-x","url":null,"abstract":"<div><p>CaZrSe₃ is a lead-free chalcogenide perovskite with a near-optimal bandgap of approximately 1.4 eV, but the effects of transport-layer properties and interfacial band alignment on device performance remain insufficiently understood. Here, SCAPS-1D was used to model a Glass/FTO/ Cd_1₋xZn_xS /CaZrSe₃/CuSbS₂/Au solar cell and sequentially optimize the electron transport layer (ETL), absorber, hole transport layer (HTL), and ETL/absorber conduction-band offset (CBO). The baseline device exhibited a power conversion efficiency (PCE) of 4.33%. Optimization of a 100 nm Cd_1₋xZn_xS ETL with a donor density of 10¹⁸ cm⁻³, a 700 nm CaZrSe₃ absorber with an acceptor density of 5 × 10¹⁵ cm⁻³, and a CuSbS₂ HTL with an acceptor density of 10¹⁸ cm⁻³ increased the PCE to 10.56%. Subsequent compositional tuning of Cd_1₋xZn_xS adjusted its bandgap from 2.4 to 2.9 eV and electron affinity from 4.4 to 3.9 eV, reducing the CBO from +0.50 to 0.00 eV. The optimized device achieved an open-circuit voltage of 0.877 V, a short-circuit current density of 29.19 mA cm⁻², a fill factor of 73.60%, and a PCE of 18.85%. CBO engineering produced the largest improvement, increasing the PCE by 8.29 percentage points and the open-circuit voltage by 339 mV through reduced interfacial recombination. The optimized device also showed a peak external quantum efficiency of 96.81% at 420 nm and values above 85% from 350 to 800 nm. These results identify Cd_1₋xZn_xS /CaZrSe₃ band alignment as the principal design parameter and provide quantitative targets for future experimental development.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-08-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148838113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}