Optical and Quantum Electronics最新文献

Advanced investigation and optimization of interdigitated photoconductive antennas array: full-wave simulation combined with analytical modeling approach 交叉光导天线阵列的研究与优化：全波仿真与解析建模相结合

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-10-18 DOI: 10.1007/s11082-025-08506-4

H. Zeraoula, D. Benyahia, M. Lazoul, C. Slimani

{"title":"Advanced investigation and optimization of interdigitated photoconductive antennas array: full-wave simulation combined with analytical modeling approach","authors":"H. Zeraoula, D. Benyahia, M. Lazoul, C. Slimani","doi":"10.1007/s11082-025-08506-4","DOIUrl":"10.1007/s11082-025-08506-4","url":null,"abstract":"<div><p>Interdigitated photoconductive antennas (IPCAs) have emerged as advantageous structures for terahertz (THz) radiations. While equivalent circuit models (ECM) are widely used for performances analysis, existing models often overlook critical physical parameters such as displacement current and antenna reactance, and often assume frequency-independent impedance. In this work, we propose a comprehensive and physically consistent modeling approach that considers complex frequency-dependent antenna impedance through full-wave simulation, and involves the displacement current. These inclusions yield a second-order differential equation with complex solutions for the gap voltage. The developed model is validated through simulations under various impedance cases, providing insight into the IPCAs physical behavior. We also demonstrate the evaluation of key antenna parameters such as THz power and conversion efficiency as functions of laser power and operating frequency, offering a more accurate optimization framework tailored to specific THz applications. Finally, a comparative analysis between the proposed and traditional models is carried out on a designed IPCA with 20 fingers, revealing considerable discrepancies, especially for the frequencies where the antenna impedance is predominantly reactive, and the results illustrate an over estimation of the radiated mean power, and the optical-to-THz conversion efficiency by more than 3 mW, and 0.1% respectively, corresponding to a ratio of 3.5, and 4.3 to the estimated values based on the proposed model, which justifies the need for the enhanced model presented in this study.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145316589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Shockley-Read-Hall current density in InGaN/GaN multiple-quantum-well light-emitting diodes under hydrostatic pressure 静水压力下InGaN/GaN多量子阱发光二极管的Shockley-Read-Hall电流密度

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-10-17 DOI: 10.1007/s11082-025-08503-7

Rajab Yahyazadeh, Zahra Hashempour

{"title":"Shockley-Read-Hall current density in InGaN/GaN multiple-quantum-well light-emitting diodes under hydrostatic pressure","authors":"Rajab Yahyazadeh, Zahra Hashempour","doi":"10.1007/s11082-025-08503-7","DOIUrl":"10.1007/s11082-025-08503-7","url":null,"abstract":"<div><p>In this study, a numerical model was used to calculate the Shockley-Read-Hall (SRH) current density in InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) under hydrostatic pressure. Finite difference techniques have been used to acquire energy eigenvalues and their corresponding eigenfunctions of <span>({text{InGaN/GaN}})</span> MQWLED and the hole eigenstates are calculated via a <span>(6 times 6)</span>k.p method under applied hydrostatic pressure. Our calculations demonstrated that the Huang-Rhys factor (HRF) of light holes and the split of band holes had the highest contributions to hole capture coefficients (60% and 30%, respectively). A change in pressure up to 10 GPa decreased the radius of point defects, the HRF and the longitudinal optical (LO) phonon scattering integral. Based on the results, this could reduce the capture coefficients of electrons, holes, and equal in the quantum well, and lower the SRH coefficient and current in MQW regions. Overall, it was revealed that the performance of LEDs is better when the SRH current is lower, indicating that hydrostatic pressure plays a positive role in the performance of these diodes.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145316324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Generation and control of steady-state entanglement in a dual microwave–atomic–magnon system via four-wave mixing 微波-原子-磁振子双系统四波混频中稳态纠缠的产生与控制

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-10-17 DOI: 10.1007/s11082-025-08519-z

Abdelkader Hidki, Noureddine Benrass, Jamila Hmouch, S. K. Singh, Abderrahim Lakhfif, Mostafa Nassik

{"title":"Generation and control of steady-state entanglement in a dual microwave–atomic–magnon system via four-wave mixing","authors":"Abdelkader Hidki, Noureddine Benrass, Jamila Hmouch, S. K. Singh, Abderrahim Lakhfif, Mostafa Nassik","doi":"10.1007/s11082-025-08519-z","DOIUrl":"10.1007/s11082-025-08519-z","url":null,"abstract":"<div><p>We propose a scheme for generating steady-state entanglement in a hybrid dual-cavity microwave–atom–magnon system, where a two-level atom ensemble interacts simultaneously with two microwave cavities. The second cavity is also coupled to a magnon mode via a magnetic-dipole interaction, whereas the first cavity is driven by a squeezed field, which enables bipartite entanglement through a four-wave mixing process. We show that the degree of entanglement and its transfer between different modes can be effectively controlled by tuning key system parameters, including detunings, dissipation rates, and coupling strengths. Notably, entanglement can be mediated even between indirectly coupled modes, and the generated correlations exhibit strong robustness against thermal noise, thus ensuring stability under realistic conditions. These results provide a viable path for engineering and manipulating quantum correlations in hybrid systems, thereby addressing experimental constraints and contributing to the development of practical quantum technologies.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145316572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

The effects of the magnetic and non-resonant intense laser fields on the electronic and optical properties of the shifted Deng–Fan type quantum well 磁性和非共振强激光场对位移邓凡型量子阱的电子和光学性质的影响

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-10-17 DOI: 10.1007/s11082-025-08509-1

Esin Kasapoglu

引用次数: 0

Design of 3M-EDFA for ultra-low gain and NF deviations for MDM-WDM systems 针对MDM-WDM系统超低增益和NF偏差的3M-EDFA设计

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-10-17 DOI: 10.1007/s11082-025-08514-4

Suhail K. Naik, Ifrah Amin, Gausia Qazi

{"title":"Design of 3M-EDFA for ultra-low gain and NF deviations for MDM-WDM systems","authors":"Suhail K. Naik, Ifrah Amin, Gausia Qazi","doi":"10.1007/s11082-025-08514-4","DOIUrl":"10.1007/s11082-025-08514-4","url":null,"abstract":"<div><p>Our proposal is to create a design for a three-mode erbium-doped fiber amplifier (3M-EDFA) that is specifically intended for use in a system that combines mode division multiplexing (MDM) and wave division multiplexing (WDM) techniques. After the efficacious completion of concurrent fiber parameters and innovative branching matrix multi-optimization for erbium profile. The 3M-EDFA system, with cladding pump power, demonstrates remarkable performance, achieving a gain surpassing 24.152 dB and a noise figure below 4.462 dB for all 48 channels evenly distributed across the LP<sub>01</sub>, LP<sub>11</sub>, and LP<sub>21</sub> signal modes. Across all the channels, 3M-EDFA exhibits gain excursion (GE) and noise figure excursion (NFE) of 0.663 dB and 0.428 dB, respectively. Furthermore, it is noteworthy that the pinnacle values attained for the differential modal gain (DMG) and differential modal noise figure (DMNF) within the wavelength range of 1543 nm to 1558 nm are a mere 0.0563 dB and 0.23 dB, respectively. Our proposed FM-EDFA system possesses the desirable characteristics of minimal excursion in both gain and noise, making it an excellent choice for future high-capacity MDM-WDM networks.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145316326","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Swarm UAVS with FSO systems: a performance analysis using differential chaos shift keying modulation 群无人机与FSO系统：使用差分混沌移位键控调制的性能分析

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-10-17 DOI: 10.1007/s11082-025-08492-7

Vijaya Ratnam Nallagonda, Ravi Bhukya, D. Sridhar, N. Siva NagaRaju, Rajesh Gogineni, K Prabu

{"title":"Swarm UAVS with FSO systems: a performance analysis using differential chaos shift keying modulation","authors":"Vijaya Ratnam Nallagonda, Ravi Bhukya, D. Sridhar, N. Siva NagaRaju, Rajesh Gogineni, K Prabu","doi":"10.1007/s11082-025-08492-7","DOIUrl":"10.1007/s11082-025-08492-7","url":null,"abstract":"<div><p>A novel method is presented to analyze the impact of hovering-based inter Unmanned Aerial Vehicle (UAV) based Free Space Optical (FSO) system on the performance and secure communication of serial relaying. This study improves upon previous research by comprehensively considering the effects of orientations, positions, and angle of arrival (AoA) fluctuations for end-to-end bit error rate (BER) analysis in serial relaying for disaster management applications. We examined the end-to-end performance by considering hovering state positions, orientations, AoA fluctuations, path loss, pointing loss, and the effects of turbulence. The influences of atmospheric turbulence, hovering state variations, and pointing errors are mitigated through the implementation of serial-relaying and Differential Chaos Shift Keying (DCSK) Modulation techniques. This approach enhances the overall transmission distance of inter-UAV-based FSO systems by addressing atmospheric turbulence, spreading factor and hovering state fluctuations. We derived an analytical expression for the end-to-end BER in serial relays incorporating DCSK modulation. The analytical results were plotted and compared with simulation results. This study provides insights into the design of inter-UAV-based FSO systems, evaluates serial relay performance under varying turbulence conditions, determines the required number of relays under specific turbulence scenarios, and assesses the achievable transmission distances.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145316325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Photoluminescence and photoreflectance probing of top base layer thickness in InGaP/GaAs dual-junction solar cells InGaP/GaAs双结太阳能电池顶基层厚度的光致发光和光反射探测

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-10-17 DOI: 10.1007/s11082-025-08500-w

S. Bahareh Seyedein Ardebili, Behnam Zeinalvand Farzin, Geun Hyeong Kim, Jong Su Kim, Sang Jun Lee

{"title":"Photoluminescence and photoreflectance probing of top base layer thickness in InGaP/GaAs dual-junction solar cells","authors":"S. Bahareh Seyedein Ardebili, Behnam Zeinalvand Farzin, Geun Hyeong Kim, Jong Su Kim, Sang Jun Lee","doi":"10.1007/s11082-025-08500-w","DOIUrl":"10.1007/s11082-025-08500-w","url":null,"abstract":"<div><p>InGaP/GaAs dual-junction solar cells are pivotal cell structures for advancing photovoltaic technology in multi-junction solar cell architecture. To evaluate how the top base layer thickness affects cell performance, we investigated the electrical and optical characteristics of two InGaP/GaAs dual-junction solar cell structures with top base layer thicknesses of 0.55 μm and 1 μm. Through electrical simulations and experimental techniques, including power- and temperature-dependent photoluminescence and room-temperature photoreflectance spectroscopies, as contactless techniques, we demonstrate the top base layer thickness’s significant impact on cell performance. The results show that increasing the top base layer thickness from 0.55 to 1 μm increases photoluminescence efficiency, decreases electron–phonon interaction strength, and reduces electron–hole pair entropy. It also reduces the electric field strength in the p-n junction and decreases the trapping time constants. These significant multi-faceted improvements in optical and electrical performance indicate the role of top base layer thickness in influencing optical and electrical properties, which can guide optimization in future solar cell designs. Specifically, the results highlight the importance of the electron–phonon interaction extracted from photoluminescence and the trapping time constants extracted from photoreflectance phase diagrams in characterizing solar cell structures.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145316501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design and analysis of a long-wave infrared double-layer subwavelength grating polarizer 长波红外双层亚波长光栅偏振器的设计与分析

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-10-15 DOI: 10.1007/s11082-025-08508-2

Yusen Zhao, Mingzhao Ouyang, Jinshuang Wu, Yuegang Fu, Wanjiao Zhang

{"title":"Design and analysis of a long-wave infrared double-layer subwavelength grating polarizer","authors":"Yusen Zhao, Mingzhao Ouyang, Jinshuang Wu, Yuegang Fu, Wanjiao Zhang","doi":"10.1007/s11082-025-08508-2","DOIUrl":"10.1007/s11082-025-08508-2","url":null,"abstract":"<div><p>Subwavelength polarization gratings, as compact and high-performance polarization-selective devices, enable efficient control of polarization channels to meet the requirements of high-dimensional detection. They are widely applied in fields such as remote sensing, material stress detection, and polarization imaging. Based on the conventional single-layer metallic grating structure, this work designs a one-dimensional double-layer metallic polarization grating with a high extinction ratio and high TM-wave transmittance. The structure is optimized and analyzed using effective medium theory and the finite-difference time-domain method. Simulation results show that, within the long-wave infrared band (8–14 μm), the grating achieves TM-wave transmittance ranging from 87% to 98%, with a maximum extinction ratio of 78 dB. Compared with single-layer gratings, the average extinction ratio is improved by approximately 40 dB, significantly enhancing polarization selectivity. Furthermore, the effects of incident angle variation, structural parameter errors, and optical crosstalk between array pixels are analyzed. The presented results provide valuable guidance for the development of metallic wire-grid polarizer arrays with broadband performance, high extinction ratios, and high transmittance.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145316069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunable Goos–Hänchen shift in Floquet topological insulator thin films Floquet拓扑绝缘体薄膜的可调谐Goos-Hänchen位移

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-10-15 DOI: 10.1007/s11082-025-08499-0

Nimra Ali, Muzamil Shah, Munsif Jan, Qaisar Abbas Naqvi

{"title":"Tunable Goos–Hänchen shift in Floquet topological insulator thin films","authors":"Nimra Ali, Muzamil Shah, Munsif Jan, Qaisar Abbas Naqvi","doi":"10.1007/s11082-025-08499-0","DOIUrl":"10.1007/s11082-025-08499-0","url":null,"abstract":"<div><p>This study presents a theoretical investigation into the tunable Goos–Hänchen (GH) shift in Floquet topological insulator (FTI) thin films when subjected to an off-resonant circularly polarized light. A key characteristic of these FTI thin films is their tunable bandgap, which can be dynamically adjusted by illuminating them with right- or left-handed circular polarization (RCP/LCP). The topological phases can be tuned by optical field strength and are classified by their Chern numbers. The Kubo formula is used to compute the optical conductivities in the FTI thin film. Using angular spectrum analysis, we derive a closed-form analytical expression for the GH shift. Our results reveal that the Hall conductivity in FTI thin films is highly sensitive to the intensity of the applied light field across various topological phases. We reveal that, far from the optical transition energies, the GH shift experiences substantial enhancement near the Brewster angle. Furthermore, we demonstrate that topological quantum phase transitions (TQPTs) influence the magnitude of the beam shifts, as well as the shifting of the Brewster angle, highlighting the GH shift as a promising tool for probing such transitions at the nanoscale. These findings offer valuable insights that could enable next-generation applications in topological photonics, quantum systems, and tunable optoelectronic technologies.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145316068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Optical emission spectroscopy for in-line control of laser additive manufacturing with metal wire of titanium–nickelide and magnesium alloys 钛镍合金和镁合金金属丝激光增材制造的发射光谱在线控制

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-10-15 DOI: 10.1007/s11082-025-08507-3

Artem Sazhin, Alexander Dubrov, Ilya Ozheredov

{"title":"Optical emission spectroscopy for in-line control of laser additive manufacturing with metal wire of titanium–nickelide and magnesium alloys","authors":"Artem Sazhin, Alexander Dubrov, Ilya Ozheredov","doi":"10.1007/s11082-025-08507-3","DOIUrl":"10.1007/s11082-025-08507-3","url":null,"abstract":"<div><p>Additive manufacturing, particularly laser additive manufacturing (LAM), has revolutionized the field of materials engineering by enabling the precise fabrication of complex geometries with bespoke properties. This technology uses laser energy to locally melt source metal material in the form of powder or wire layer-by-layer to create three-dimensional objects. The versatility of LAM provides a unique opportunity to utilize a wide range of metallic alloys and composite materials, allowing advancements in industries such as aerospace, automotive, and biomedical engineering. Despite the remarkable potential of LAM, a critical challenge facing its adoption is the potential variation in alloy compositions during the additive manufacturing process. These variations can arise from factors such as selective evaporation of alloying elements, oxidation, or fluctuations in the thermodynamic conditions of the melting-solidification cycle. Addressing these issues requires a nuanced understanding of the in-line chemical and physical transformations that occur. Spectroscopic approaches provide real-time monitoring capabilities to detect and quantify compositional changes, offering a pathway to better control and stabilization of the LAM process. We have developed an optical emission spectroscopy system for in-line composition monitoring during the laser metal deposition process. The system is based on a high-resolution optical spectroscopy sensor and allows the in-line collection of unique spectral features intrinsic to the materials used. Using intelligent data analysis and machine learning methods, the system can tailor the additive process parameters to achieve the desired material composition, as well as optimal biochemical and biomechanical compatibility characteristics. The capabilities of the developed spectroscopic system have been demonstrated in the additive manufacturing of superelastic titanium–nickelide and magnesium alloys and surface structures suitable for medical use.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145316070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0