{"title":"The effects of the magnetic and non-resonant intense laser fields on the electronic and optical properties of the shifted Deng–Fan type quantum well","authors":"Esin Kasapoglu","doi":"10.1007/s11082-025-08509-1","DOIUrl":null,"url":null,"abstract":"<div><p>The aim of this study is to examine how the magnetic field, the non-resonant intense laser field, and the well sizes affect the energy spectrum and intraband transitions of electrons confined within a quantum well modeled with a shifted Deng–Fan molecular potential. The calculations were performed within the effective mass and parabolic band approximation frameworks. These investigations have involved analyzing the energy spectrum and determining both the linear and third-order nonlinear absorption coefficients. To obtain the solution of the Schrödinger equation for the system, the diagonalization technique was applied using a set of orthonormal basis functions. The calculation of the absorption coefficients both linear and third-order nonlinear components were carried out using the conventional density matrix approach in conjunction with the perturbative expansion method. Our results reveal critical tunability of the optical absorption characteristics through well size, magnetic field strength, and intense laser field parameters.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 11","pages":""},"PeriodicalIF":4.0000,"publicationDate":"2025-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08509-1","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
The aim of this study is to examine how the magnetic field, the non-resonant intense laser field, and the well sizes affect the energy spectrum and intraband transitions of electrons confined within a quantum well modeled with a shifted Deng–Fan molecular potential. The calculations were performed within the effective mass and parabolic band approximation frameworks. These investigations have involved analyzing the energy spectrum and determining both the linear and third-order nonlinear absorption coefficients. To obtain the solution of the Schrödinger equation for the system, the diagonalization technique was applied using a set of orthonormal basis functions. The calculation of the absorption coefficients both linear and third-order nonlinear components were carried out using the conventional density matrix approach in conjunction with the perturbative expansion method. Our results reveal critical tunability of the optical absorption characteristics through well size, magnetic field strength, and intense laser field parameters.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.