Optical and Quantum Electronics最新文献

{"title":"Quadruple frequency-tunable and phase-tunable optoelectronic oscillator based on stimulated Brillouin scattering","authors":"Yue Wang,&nbsp;Shuang Qiu,&nbsp;Chang Li,&nbsp;Mengzhen Yang,&nbsp;Lei Zhao,&nbsp;Lina Zheng,&nbsp;Shiyin Li","doi":"10.1007/s11082-025-08433-4","DOIUrl":"10.1007/s11082-025-08433-4","url":null,"abstract":"<div><p>We propose and theoretically analyze a quadruple frequency-tunable and phase-tunable optoelectronic oscillator (OEO) based on the gain-loss compensation of stimulated Brillouin scattering (SBS) effect and carrier phase-shifted double sideband (CPS-DSB) modulation of DPMZM. Through optical modulation, four pump lights with same intensity and specific frequency spacing equal to double Brillouin frequency shift are generated and launched in a highly nonlinear fiber (HNLF) from the direction opposite to the CPS-DSB signals. By the gain-loss compensation of SBS effect, an oscillating signal whose frequency is equal to quadruple Brillouin frequency shift is realized. The frequency of the generated microwave signal can be changed within a certain range by tuning the wavelength of the tunable laser source (TLS). The phase can be tuned by controlling the direct current bias voltage of the dual-parallel Mach-Zehnder modulator (DPMZM). As a result, a fundamental oscillation signal, with a frequency tunable range from 35.12 GHz to 37.76 GHz and a tunable phase from 0 deg to 360 deg, is realized in theory. In addition, the phase noise at 10 kHz offset is -110.74 dBc/Hz when the wavelength of the TLS is set at 1550 nm.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144934772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Synergistic enhancement of Nafion edge passivation and bifacial illumination for high-efficiency mechanically stacked c-Si solar cells","authors":"Rafi Ur Rahman,&nbsp; Alamgeer,&nbsp;Hasnain Yousuf,&nbsp;Muhammad Quddamah Khokhar,&nbsp;Maha Nur Aida,&nbsp;Sangheon Park,&nbsp;Kyesoo Kim,&nbsp;Junsin Yi","doi":"10.1007/s11082-025-08381-z","DOIUrl":"10.1007/s11082-025-08381-z","url":null,"abstract":"<div><p>Enhancing the efficiency of silicon-based PV devices is critical for advancing solar energy technologies. This study investigates the impact of Nafion-based edge passivation and bifacial illumination optimization on mechanically stacked bifacial c-Si TOPCon solar cells. Nafion passivation at varying concentrations (2.5 wt%, 5 wt%, and 10 wt%) was applied to mitigate edge recombination losses, with 5 wt% identified as optimal, leading to efficiency enhancements of 27.96% for n-TOPCon and 28.47% for p-TOPCon under 1 sun front illumination with 0.5 sun rear albedo. The solar cells were mechanically stacked and analyzed under different electrical interconnections (parallel and series) and varying rear-side albedo levels (0.1–0.5 sun). The p-TOPCon tandem configuration achieved efficiencies from 21.80 to 28.47% (parallel) and 11.92–22.53% (series), while the n-TOPCon tandem exhibited 23.04–27.96% (parallel) and 9.34–18.27% (series). Results confirm that bifacial illumination significantly improves charge carrier collection and reduces recombination losses, particularly under high-albedo conditions. This study presents a scalable and cost-effective strategy for enhancing c-Si TOPCon solar cells, integrating bifacial light harvesting, Nafion passivation, and tandem stacking, offering promising potential for next-generation high-efficiency photovoltaics.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144926990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Theoretical investigation of hole transport and donor materials derived from anthracene with improved optoelectronic characteristics for perovskite and organic solar cell applications","authors":"Sidra Manzoor,&nbsp;Faheem Abbas,&nbsp;Ruba Munir,&nbsp;Nimra Manzoor,&nbsp;Gadah Albasher,&nbsp;Muhammad Ishaq,&nbsp;Muhammad Waqas,&nbsp;Saima Noreen","doi":"10.1007/s11082-025-08429-0","DOIUrl":"10.1007/s11082-025-08429-0","url":null,"abstract":"<div><p>This study advances the field of emerging photovoltaics by exploring creative engineering specifically designed for perovskite (PSC) and organic solar cells (OSCs). This work presents the theoretical design of eight anthracene-based derivatives <b>(A3D1–A3D8)</b> using a push-pull molecular engineering approach, in which various electron-accepting groups are introduced via thiophene π-bridges onto a planar anthracene core functionalized with triphenylamine side units. These derivatives are systematically evaluated to identify their suitability as either hole-transport materials for PSCs or donor materials for OSCs. The tailored derivatives exhibit moderate to narrow optical bandgaps (1.12–2.14 eV) and strong visible-light absorption, enabling complementary light harvesting that may support enhanced photocurrent generation when integrated with perovskite absorber layers. <b>A3D5</b> stands out as a transport material, featuring a wide bandgap of 2.14 eV, a deep HOMO level (-5.30 eV), and a considerable theoretically predicted hole transport integral (t_h = 0.1522 eV), making it well-suited for efficient PSC applications. Among the designed derivatives, <b>A3D3</b> exhibits a narrow bandgap (1.12 eV), strong absorption in the near-infrared region (λ_max = 805 nm), a high dipole moment of 20.428 D in toluene, and the highest amount of charge transfer (ΔN_max <b>=</b> 3.568e), making it a promising donor material for OSCs. These properties contribute to enhanced photocurrent generation and a simulated power conversion efficiency of up to 20.64%, outperforming the reference material Spiro-OMeTAD. Overall, this research expands our knowledge of push-pull engineering for these tunable anthracene-based derivatives, offering a plethora of opportunities for effective use in perovskite and organic photovoltaics.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144920501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ce-doped zinc sulfide (ZnS): a pathway to bandgap control, ferromagnetic behavior, and optoelectronic innovation","authors":"A. Mekri,&nbsp;K. Bidai,&nbsp;T. Seddik,&nbsp;M. Batouche,&nbsp;Zheng Chang,&nbsp;Sajal Biswas,&nbsp;A. Belfedal","doi":"10.1007/s11082-025-08428-1","DOIUrl":"10.1007/s11082-025-08428-1","url":null,"abstract":"<div><p>Herein, using DFT + U calculations, this study investigates the structural, optical, and magnetic properties of Ce-doped ZnS, with a focus on bandgap engineering and the induction of ferromagnetic states. Our theoretical analysis indicates that Ce doping substantially alters the electronic structure of ZnS, reducing its bandgap from 3.37 eV in the pure material to 2.8 eV at a 12% doping level. This bandgap reduction is attributed to the formation of localized Ce‑4<i>f</i> states within the gap, which enable sub-bandgap optical transitions, as demonstrated by increased absorption in both the infrared and visible spectra. Additionally, the incorporation of Ce³⁺ ions introduces ferromagnetic states due to the partially filled 4f-orbitals, breaking time-reversal symmetry and enabling spin-dependent functionality. By precisely controlling Ce doping, the optical and magnetic properties of ZnS can be finely tuned, making it a promising material for advanced applications such as light-emitting diodes, phosphors, infrared detectors, and spintronic devices. This study offers a comprehensive examination of the effects of Ce doping in ZnS and underscores its potential in next-generation optoelectronic and spintronic technologies.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144920502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Plasmon Enhanced UV Photodetector Utilising Silver Ablated Silver Nanoparticle on Double Porous Silicon Layers","authors":"Mohammed Idrees Omer,&nbsp;Nasih Hma Salah","doi":"10.1007/s11082-025-08424-5","DOIUrl":"10.1007/s11082-025-08424-5","url":null,"abstract":"&lt;div&gt;&lt;p&gt;Porous silicon (PS) photodetectors (PDs) have attracted interest for Ultra-violet (UV) detection due to their unique properties, many devices still suffer from low sensitivity and slow response. However, enhancement via silver nanoparticle (Ag-NP) modification on double-layer PS remains insufficiently studied. This work addresses this gap by using optimized spray pyrolysis method to deposit Ag-NPs, improving sensitivity and response times. Double-layer PS structures were successfully fabricated using electrochemical anodization process on p-type (111) silicon (Si) wafer, yielding average thicknesses of 9.77 µm (upper) and 9.22 µm (lower) with 33.32 nm pore diameters, offering a high surface area for optoelectronic applications. Fourier-transform infrared spectroscopy (FTIR) tests showed the presence of Si–H₂ (906, 2113 cm⁻&lt;sup&gt;1&lt;/sup&gt;) and Si–O-Si (1064 cm⁻&lt;sup&gt;1&lt;/sup&gt;) vibrations, and X-ray diffraction (XRD) revealed a clear peak at 2θ = 69.21°, which matches the (400) Si plane, confirming that PS was created. Ag-NPs were synthesized via laser ablation in liquid, producing uniform particles (~ 16.25 nm by Field emission scanning electron microscopy (FESEM), and 16.74 nm by XRD), which were evenly deposited onto double-layer PS. After deposition, Ag-NPs grew to 20.55 nm, and PS’s thicknesses slightly increased to 10.24 µm (upper) and 9.41 µm (lower), confirming successful infiltration. Energy dispersive X-ray spectroscopy (EDS) confirmed 2.26% Ag incorporation and reduced Si content, suggesting surface oxidation. According to Photoluminescence (PL) test, When PS excited with 375 nm light, it emitted red light at 719.82 nm (bandgap 1.72 eV), showing it has tiny crystal areas, and after adding Ag-NPs, it shifted to blue light at 469.81 nm (bandgap 2.64 eV), indicating better quantum confinement and light emission. Graphite, used as electrodes, provided stable and good ohmic contact, while thermal annealing at 130 °C for 30 min improved the adhesion and stability of the electrode contacts. The performance of the PDs based on PS and PS- Ag-NPs was evaluated under 395 nm UV illumination at various voltage levels ranging from -5.2 V to + 5.2 V and light intensities of 1, 2, 3, 5, 7, 10, and 12 mW/cm&lt;sup&gt;2&lt;/sup&gt;. Sensitivity and responsivity were recorded at ± 2.8 V, ± 4 V, and ± 5.2 V. At + 5.2 V, PS-Ag-NPs reached 62.36 µA photocurrent, 3445% sensitivity, and 1.033 A/W responsivity, outperforming PS (6.4 µA, 902%, 0.102 A/W). At -5.2 V, PS-Ag-NPs showed even better results (-67.15 µA, 3882%, 1.045 A/W) compared to PS (-7.12 µA, 1130%, 0.099 A/W), and similar patterns were seen at lower voltages. I-T measurements of the PS- Ag-NPs device showed that at + 5.2 V, the rise time decreased from 287 μs to 168 μs with increasing irradiances, due to faster photocarrier generation. Conversely, fall time increases from 146 μs to 254 μs, attributed to carrier trapping and delayed recombination at higher irradiance levels. These improvements come from the ","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144920499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"All-optical logic gates via PT-symmetric soliton dynamics in nonlinear directional couplers","authors":"S. M. Al-Marzoug","doi":"10.1007/s11082-025-08427-2","DOIUrl":"10.1007/s11082-025-08427-2","url":null,"abstract":"<div><p>We present a numerical study of a PT-symmetric nonlinear directional coupler designed for femtosecond soliton-based optical switching and logic operations. The system is modeled using a coupled nonlinear Schrödinger equation that incorporates dispersion, Kerr nonlinearity, linear coupling, and balanced gain and loss. Our simulations reveal transistor-like behavior, where a control pulse triggers threshold-based switching of output energy between the waveguides. The system’s transfer function fits a sigmoid curve, clearly marking the switching threshold at approximately <span>(:hspace{0.17em}{P}_{c}^{text{th}}approx:0.890hspace{0.17em}text{W})</span>. Building on composite logic principles, we demonstrate robust, all-optical XOR gate functionality, with simulated truth tables matching theoretical expectations. Additionally, parameter maps plotted in the control power–gain plane identify ON/OFF regions, threshold boundaries, and zones of high sensitivity. These results suggest that PT-symmetric soliton transistors could serve as fundamental components in ultrafast photonic neuromorphic systems and next-generation all-optical logic devices.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144920500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Studies of the defect structure of the active-nonlinear gradient (LiNbO_3:Er^{3+}:Yb^{3+}) crystal by UV and IR absorption spectra","authors":"N. V. Sidorov,&nbsp;A. Yu. Pyatyshev,&nbsp;E. V. Stroganova,&nbsp;V. V. Galutskiy,&nbsp;O. A. Klimenko,&nbsp;A. V. Skrabatun","doi":"10.1007/s11082-025-08392-w","DOIUrl":"10.1007/s11082-025-08392-w","url":null,"abstract":"<div><p>A nearly linear decrease in the spectral vision of the UV absorption edge of the gradient <span>(LiNbO_3:Er^{3+}:Yb^{3+})</span> crystal along the ferroelectric axis was detected. The second-order IR absorption spectra of the gradient <span>(LiNbO_3:Er^{3+}:Yb^{3+})</span> crystal in the wavenumber range of 2000–3000 cm⁻¹ have been recorded for the first time. The appearance of absorption lines in the specified spectral range is typical of defective and highly anharmonic crystals. Based on the IR absorption spectra in the region of stretching vibrations of the <span>(OH^-)</span>-groups, it has been found that the oxygen-octahedral clusters <span>(MeO_6)</span> (Me–<span>(Li^+)</span>, <span>(Nb^{5+})</span>, vacant octahedron V, impurity ions <span>(Er^{3+})</span> and <span>(Yb^{3+})</span>) of the structure of the gradient <span>(LiNbO_3:Er^{3+}:Yb^{3+})</span> crystal are practically not distorted. It has been shown that the volume concentration of <span>(OH^-)</span>-groups in the gradient <span>(LiNbO_3:Er^{3+}:Yb^{3+})</span> crystal is several times less than in compositionally uniform congruent and stoichiometric lithium niobate crystals. The obtained results are significant for the complex analysis of the nonlinear materials.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144897129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"PAPR reduction for enhanced performance in coherent-detection based underwater wireless communication-system employing Hadamard-transform combined with clipping and square-rooting technique","authors":"Amlan Das,&nbsp;Nilanjana Sarkar,&nbsp;Barnali Pal,&nbsp;Rahul Mukherjee,&nbsp;Manish Dev Sharma,&nbsp;Ardhendu Sekhar Patra","doi":"10.1007/s11082-025-08423-6","DOIUrl":"10.1007/s11082-025-08423-6","url":null,"abstract":"<div><p>Underwater optical wireless communication (UOWC) systems represent a significant advancement in marine communication technologies, offering high data rates and enhanced bandwidth compared to traditional acoustic methods. However, in coherent-detection orthogonal-frequency-division-multiplexing (OFDM) UOWC system one of the key challenges is the high peak-to-average power ratio (PAPR) of the transmitted optical signals. Using coherent-detection OFDM technology, a UOWC-system has been established employing 450 nm blue laser-diode (LD). A hybrid method, Hadamard-transform combined with clipping and square-rooting technique is proposed to diminish the effect of high PAPR. 18 Gbps data-rate have been transmitted over 31.5 m, 29 m, and 27 m distances for 32, 64 and 128 QAM signals and very good Q-values have been obtained utilizing our proposed-system. Employing this technique PAPR-values are decreased by 6.4 dB for 32-QAM, 6.2 dB for 64-QAM and 5.9 dB for 128-QAM than original OFDM-signals. The percentages of improvements are 48.4%, 45.5% and 42.4% respectively for 32, 64 and 128-QAM compared to OFDM-signal. The potential of this technique for mitigating the effects of high PAPR in UOWC systems is analyzed and shows a significant improvement of PAPR values compared to original OFDM-signal. So, our proposed system for PAPR reduction can significantly improve the system’s energy efficiency, extend the communication-range and minimizes error-rates. This system is suitable for PAPR reduction with a focus on real-time implementation of UOWC-system.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144897126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Vanadium dioxide based wideband polarization converter with switch capability between reflection and transmission modes","authors":"Saman Heidari,&nbsp;Najmeh Nozhat","doi":"10.1007/s11082-025-08416-5","DOIUrl":"10.1007/s11082-025-08416-5","url":null,"abstract":"<div><p>In this paper, a vanadium dioxide (VO₂)-based broadband polarization converter with the ability to convert different polarizations in reflection and transmission modes has been designed. When VO₂ is in the insulating state, the structure has linear to linear and circular to circular polarization conversion performances in transmission mode. In additon, the structure has asymmetric transmission capability. In the metallic state of VO₂, the structure exhibits a four-band linear to linear and a five-band linear to circular polarization conversion functions. Under circularly polarized incident wave, a two-band circular to circular polarization conversion has been obtained, and also at six frequency points the reflected wave has linear polarization. Surface current distribution analysis, in addtion to the study of the effects of important geometric parameters and incidence and polarization angles on the polarization converter’s performance have been presented. The device shows robust performance for incidence angles up to about 40°. To confirm the validity of the simulation results, the equivalent circuit model of the structure has been extracted. The proposed structure offers a wide range of applications, including multichannel polarization detection and multifunctional integrated systems.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144897128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design of a short length wideband polarization filter using PCF having Ag coated holes filled with ENZ materials","authors":"Shahriar Ahmed,&nbsp;Md. Hasibul Hasan,&nbsp;Shah Laheen Mashahad,&nbsp;Hasan Masud Khan,&nbsp;M. Shah Alam","doi":"10.1007/s11082-025-08419-2","DOIUrl":"10.1007/s11082-025-08419-2","url":null,"abstract":"<div><p>In this work, a dual-window polarization filter has been designed using photonic crystal fiber (PCF) having pentagonal arrangements of circular air holes. Only two holes in the cladding are coated with silver (Ag) instead of gold for plasmon excitation and these two Ag-coated holes are filled with indium tin oxide (ITO), which is an epsilon-near-zero (ENZ) material to prevent the oxidization of silver. Fused silica is chosen as background material. The bandwidth and also the crosstalk are calculated to obtain an optimized filter at communication wavelengths that passes only X-polarized mode and blocks Y-polarized mode. The confinement losses at the wavelengths of 1.31 <span>(mu text {m})</span> and 1.55 <span>(mu text {m})</span> are 1021.8 dB/cm and 867.03 dB/cm, respectively. The filter performs as a wideband filter with a bandwidth of 735 nm when the length is only 60 <span>(mu text {m})</span>. The potential use of the filter could be in optical communication and sensing.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144897127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}