Optical and Quantum Electronics最新文献

{"title":"Effects of the magnetic field, hydrostatic pressure and temperature on binding energies and optical absorption of states with donor impurity in different type quantum wells","authors":"Esin Kasapoglu","doi":"10.1007/s11082-024-08000-3","DOIUrl":"10.1007/s11082-024-08000-3","url":null,"abstract":"<div><p>In this study, the magnetic field, hydrostatic pressure and temperature dependent electronic and optical properties of asymmetric quantum wells which have some exponential potentials in the absence and presence shallow donor impurities are investigated. Calculations are made within the framework of the effective mass and parabolic band approximations. In the absence and presence of the donor impurity, we calculated the total absorption coefficient including linear and nonlinear terms for transitions between the lowest two levels. In addition, by using a variational approach, we investigated the binding energies of the 1 s and 2 s donor impurity states The results show that the total absorption peaks shift to the blue shift with the effect of external perturbations, whereas redshift in the presence of impurities. This indicates that the impurities can effectively change the band gap of semiconductors, allowing the semiconductor to absorb lower energy photons, and making it possible to design materials with special optical properties such as light absorption and emission properties.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dynamical analysis and soliton solutions of Kraenkel-Manna-Merle system with beta time derivative","authors":"Tayyaba Younas,&nbsp;Jamshad Ahmad","doi":"10.1007/s11082-024-07926-y","DOIUrl":"10.1007/s11082-024-07926-y","url":null,"abstract":"<div><p>This paper examines the fractional Kraenkel-Manna-Merle (KMM) system, which models the behavior of a nonlinear ultrashort wave pulse in non-conductive saturated ferromagnetic materials. The primary contribution of this paper is a thorough dynamical analysis of the model in non-conductive saturated ferromagnetic materials, employing the beta derivative to unveil intricate behaviors and deepen our understanding of the underlying physics. The objective is to provide a thorough analysis, including identifying solitons, studying bifurcation phenomena, exploring chaotic behavior, and assessing stability. By using the Modified Sardar subequation method, a recent addition to the literature, we uncover various soliton solutions, some of which are presented here for the first time. These solutions are visualized with 2D and 3D graphics to explore fractional effects, focusing on solitons such as bright, dark, periodic singular, kink, anti-kink, and singular kink. This method proves effective for solving a broad range of nonlinear equations in mathematical physics, offering a notable advantage in generating diverse solution families. The study also includes a detailed analysis of the model’s dynamics, covering bifurcation, chaos, and stability. Phase portrait analysis at critical points reveals the system’s transitional behavior. The addition of an external periodic force induces chaotic dynamics, shown through 2D and 3D visualizations. Stability analysis further confirms the effectiveness of these approaches in examining phase portraits and solitons across various nonlinear systems.\u0000</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142913002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comparative study of supercontinuum spectra generated by As2S3 chalcogenide photonic crystal fibers with different lattice types","authors":"Ben Chu Van,&nbsp;Trong Dang Van,&nbsp;Lanh Chu Van","doi":"10.1007/s11082-024-08013-y","DOIUrl":"10.1007/s11082-024-08013-y","url":null,"abstract":"<div><p>Three distinct configurations of As₂S₃ chalcogenide photonic crystal fibers (PCFs) were designed to investigate supercontinuum generation (SCG). The optical properties of PCFs with the circular lattice (CL), square lattice (SL), and hexagonal lattice (HL) were comprehensively analyzed to choose the optimal fiber for SCG. This investigation facilitated the identification of three superior structures, specifically designated as #CF, #SF, and #HF, respectively. These structures are unified by operating within an all-normal dispersion regime, each presenting a lattice constant of 1.0 μm and a filling factor of 0.35. These fibers were subjected to a peak power of 4.0 kW and a pulse duration of 270 fs, culminating in an expansive supercontinuum range. Notably, the SC range extended from 2.0 to 6.5 μm for #CF, from 2.0 to 8.3 μm for #SF, and from 1.9 to 6.6 μm for #HF. The SL-PCF exhibited the broadest supercontinuum, attributed to its protracted flat dispersion band. Furthermore, compared to previously reported all-normal dispersion PCFs, the spectral range facilitated by this peak power was significantly augmented. These optical fibers promise to provide supercontinuum spectra with broad bandwidth for practical applications in sensing and gas detection.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Robust structural, optical and thermal properties of stannic oxide nanoparticles incorporated polyindole nanocomposite as an efficient emissive layer material for OLED application","authors":"Sanjeev Kumar,&nbsp;Ram Bilash Choudhary,&nbsp;Debashish Nayak,&nbsp;Gautam Sarkhel,&nbsp; Rajshree","doi":"10.1007/s11082-024-08003-0","DOIUrl":"10.1007/s11082-024-08003-0","url":null,"abstract":"<div><p>In this research, polyindole (PIN) nanocomposites reinforced with stannic oxide (SnO₂) were synthesized using a straightforward in situ chemical oxidative polymerization technique. Fourier transform infrared spectroscopy (FTIR) was used to identify the chemical bonding of SnO₂ in the PIN, indicated by the characteristic peak around 602 cm⁻¹. The addition of SnO₂ nanoparticles improved the crystallinity of PIN matrix, as confirmed by X-ray diffraction (XRD) and average crystallite size for 15% PS was estimated to be 9 nm. 15% PS showed an enhanced optical bandgap of 2.78 eV and a reduced refractive index of 2.07 compared to pristine PIN. Uniformly dispersed SnO₂ nanoparticles on the surface PIN matrix were observed via field emission-scanning electron microscopy (FESEM). X-ray electron spectroscopy (XPS) analysis confirmed the formation of the 15% PS nanocomposite by revealing the presence of all elements (C, N, Sn and O) and their chemical oxidation states (C1s, N1s, O1s, Sn 3d_<b>3/2</b> and Sn 3d_<b>5/2</b>) in the corresponding spectra. The thermal stability of pure PIN improved by 7% with SnO₂ nanoparticle incorporation. The 15% PS nanocomposite exhibited the highest PL intensity, with strong emissions at 431 nm and 481 nm, and weaker emissions at 628 nm, 680 nm, 718 nm, and 757 nm. The colour purity of 15% PS is estimated to be 2.8% (close to zero) which indicates that the emission is nearly white. These properties highlight its potential as an emissive layer for white light emission in organic light emitting diodes (OLEDs).</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142889571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Trapping of optical pulse in negative index material via Kerr effect","authors":"Dimishree Neog,&nbsp;Abhijeet Das,&nbsp;Subrata Hazarika","doi":"10.1007/s11082-024-07981-5","DOIUrl":"10.1007/s11082-024-07981-5","url":null,"abstract":"<div><p>Kerr non-linearity can induce epsilon-near-zero material characteristics in negative index material when incident pulse intensity is at its threshold value. Such Kerr induced epsilon-near-zero regime in negative index material, where group velocity approaches zero and phase velocity diverges, is ideal for strong exciton -photon interaction that can lead to the formation of polaritons oscillating between photonic and excitonic states with frequency <span>(frac{{Omega_{R} }}{sqrt hbar })</span>, <span>(Omega_{R})</span> being the Rabi frequency. Quantum mechanical analysis using polariton dynamics shows that the optical pulse will be self-trapped in Kerr induced epsilon-near-zero regime and, thereby, suggest that maintaining the intensity of an incident light pulse at the threshold value in negative index material may be an alternative means to trap light, unlike slow light, stopped light or stationary light generated conventionally through electromagnetically induced transparency.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142889575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Analyzing multilayer left-handed metamaterial optical waveguide structure with a localized arbitrary kerr-type nonlinear guiding film","authors":"Yaw-Dong Wu,&nbsp;Yi-Jun Xu","doi":"10.1007/s11082-024-07901-7","DOIUrl":"10.1007/s11082-024-07901-7","url":null,"abstract":"<div><p>We propose a general method for analyzing a multilayer left-handed metamaterial (LHM) optical waveguide structure with a localized arbitrary Kerr-type nonlinear guiding film. To the best of our knowledge, the proposed method has not been reported before. The available electromagnetic simulation software like cannot be used to analyze the case of the proposed multilayer photonic metamaterial slab optical waveguide structures with a localized arbitrary Kerr-type nonlinear guiding film. It gives detailed modal analyses of TE-polarized waves in the proposed photonic metamaterial slab optical waveguide structures. The analytical results are accompanied by some numerical examples. The method can also be degenerated to analyze planar conventional optical waveguide structures with a localized arbitrary Kerr-type nonlinear guiding film. It can also help researchers to calculate the evolutions of TE waves propagating in the proposed waveguide structures. Based on this general method, the analysis and calculation of planar LHM multilayer slab optical waveguide structure with a localized arbitrary Kerr-type nonlinear guiding film and planar conventional multilayer slab optical waveguide structure with a localized arbitrary Kerr-type nonlinear guiding film can be achieved easily.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142889574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical and electrical characteristics of dome tapered silicon nanowires for efficient photovoltaic solar energy conversion","authors":"R. El-Bashar,&nbsp;Mohamed Farhat O. Hameed,&nbsp;Hamdy Abdelhamid,&nbsp;S. S. A. Obayya","doi":"10.1007/s11082-024-07618-7","DOIUrl":"10.1007/s11082-024-07618-7","url":null,"abstract":"<div><p>The optical and electrical characteristics of novel dome-shaped nanowires (NWs) are reported for energy harvesting applications. In order to show the superiority of the suggested design, a comparison is made with cylindrical and other tapered nanowires such as conical and horn-shaped NWs. A tapering parameter is introduced to control the NW geometry and its optical and electrical efficiency. Further, the different geometrical parameters are investigated using finite difference time domain to minimize the light reflection and maximize the absorption through the suggested designs. It is evident that the tapering parameter effectively can control the NW-tip geometry to achieve optimum light coupling. The dome-shaped NW design has a good light confinement with better absorption compared to the horn and conical NW structures. This is due to the supported MIE-based mode resonances over a broad wavelength range. Further, the top diameter of the dome-shaped NWs supports more guided modes with high intensity and better light coupling. Besides, the light reflections between the tapered NWs improve the light coupling with the NWs where the optical path length of low frequencies is increased with improved light absorption. Therefore, the reported design with tapering factor of 2.2 achieves an average absorption of 81% with an improvement of 9.5% over the absorption of the conical NWs SC. Further, photo-generated current density and optical efficiency of 37 mA/cm² and 41% are obtained by the reprted design with an enhancement of 22% and 8.8% compared to conventional cylindrical and conical NWs, respectively. Further, the electrical efficiency is simulated using the finite element method considering the recombination effects. The power conversion efficiency of the dome-shaped array is equal to 15.96%, with an enhancement of 32% and 17.5% relative to cylindrical and conical NWs, respectively. The fine-tapered NW with a dome-shaped design is a crucial step toward realizing highly efficient NWs–SC with cost-effective material savings.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142889572","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Influence of 5‑ammonium valeric acid iodide additive on the structural and optical behaviors of methylammonium lead tri-iodide perovskite thin films","authors":"A. M. El-naggar,&nbsp;Anwar Q. Alanazi,&nbsp;A. M. Kamal,&nbsp;Ghaida S. Al hisan,&nbsp;A. M. Aldhafiri,&nbsp;Ahmad A. Alsaleh,&nbsp;Amanullah Fatehmulla,&nbsp;Mohamed Bakr Mohamed","doi":"10.1007/s11082-024-07987-z","DOIUrl":"10.1007/s11082-024-07987-z","url":null,"abstract":"<div><p>Methylammonium lead tri-iodide, (AVAI)_x(MAPbI₃)_1-x (x = 0, 0.05, 0.1, 0.15, 0.25) perovskite thin films were formed using a spin coating method in a glove box beneath an argon environment. The structures of the formed films were investigated using the X-ray diffraction technique. The effect of AVAI amount on the intensity of diffraction peaks was explored. Film with 15% AVAI has the highest optical absorbance. The transmittance of the film 25% AVAI was enhanced as compared with undoped film in the wavelength range up to 1700 nm but it decreased beyond this range. The optical band gap energy (<i>E</i>_g) value of MAPbI₃ is 1.58 eV. The direct and indirect <i>E</i>_g values of the films became 1.52–1.59 or 1.31–1.49 eV depending on the amount of AVAI on the films, respectively. Various specified models were used to determine the refractive index (<i>n</i>) of different films. The <i>n</i>-average rose from 2.95 (based on direct <i>E</i>_g value) or 2.99 (based on indirect <i>E</i>_g) for the ​ film (x = 0) to 2.98 (based on direct <i>E</i>_g value) or 3.08 (based on indirect <i>E</i>_g) for the film with 15% AVAI. Film with 15% AVAI has the highest dielectric value, while film with 25% AVAI has the maximum dielectric loss value as compared with MAPbI₃ and other dopant ratios. Film with 25% AVAI has the highest optical conductivity value. The film with 15% AVAI showed significant gains in nonlinear optical (NLO) parameter values, making it a suitable option for a variety of NLO and future photonic uses. We studied the photoluminescence features of different films using a 532 nm laser excitation wavelength.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142889467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Experimental and simulation study for an improved efficiency of 8.46% of a CTS thin-film solar cell: impact of tin (Sn) concentration on structural, optoelectronic properties and photovoltaic performance","authors":"Elarbi Laghchim,&nbsp;Abderrahim Raidou,&nbsp;Jamal Zimou,&nbsp;Amal Yousfi,&nbsp;Jaouad Mhalla,&nbsp;Abdelattif El-Habib,&nbsp;Atika Fahmi,&nbsp;Khalid Nouneh,&nbsp;Mustapha Rouchdi,&nbsp;Amine Belfhaili,&nbsp;M’hamed Taibi,&nbsp;Mounir Fahoume","doi":"10.1007/s11082-024-07951-x","DOIUrl":"10.1007/s11082-024-07951-x","url":null,"abstract":"<div><p>In this study, we investigated the influence of tin concentration on the physical properties of eco-friendly CTS thin-film based solar cells deposited by means of the SILAR route. The results were discussed through several characterization techniques. XRD revealed the formation of Cu₂SnS₃ phase, along with peaks of CuS and Cu₄S₇ secondary phases, which diminished with increasing tin concentration. Raman spectroscopy confirmed the tetragonal crystalline structure of CTS films with (112) as the preferred orientation. The direct optical bandgap energy of the synthesized CTS films increased from 1.42 to 1.56 eV as the concentration of tin rose from 0.08 to 0.12 M. Electrical Hall effect measurements performed on the grown CTS layers revealed a p-type conductivity with hall mobility in the range 0.38–2.135 cm²/Vs and a carrier concentration between 3.93 × 10²¹ cm⁻³ and 7.68 × 10²¹ cm⁻³. Furthermore, using SCAPS-1D solar cell simulation software, the photovoltaic performance of the CTS-S1, CTS-S2 and CTS-S3 absorber layers has been evaluated. Despite the fact that the CTS-S1 absorber layer has more secondary phases and slightly lower mobility than the CTS-S2 and CTS-S3 layers, its excellent optical properties, including a high absorption coefficient (&gt; 10⁴ cm⁻¹) and an optimal bandgap energy of 1.42 eV, enabled it to achieve the best efficiency of 8.46%.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142889698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design of compact 1×4 fully non-blocking silicon-photonic mode selective switch","authors":"Ho Duc Tam Linh,&nbsp;Vuong Quang Phuoc,&nbsp;Dang Thanh Chuong,&nbsp;Vo Duy Phuc,&nbsp;Dao Duy Thang,&nbsp;Truong Cao Dung,&nbsp;Nguyen Tan Hung","doi":"10.1007/s11082-024-07991-3","DOIUrl":"10.1007/s11082-024-07991-3","url":null,"abstract":"<div><p>We propose a novel 1×4 non-blocking four-mode selection switch on a silicon-on-insulator (SOI) substrate. It comprises one Y-Junction coupler, six Phase Shifters (PS), and three Multimode Interferences (MMI). While the Y-Junction is designed to divide modes at the input of the device, the MMIs direct signals from its inputs to suitable outputs by adjusting the value of the Phase Shifters. The outstanding feature is that the proposed switch allows the four input modes (<span>(hbox {TE}_0)</span> − <span>(hbox {TE}_1)</span> − <span>(hbox {TE}_2)</span> − <span>(hbox {TE}_3)</span>) to be guided simultaneously or sequentially to the desired output without any discontinuation. Through BPM-3D beam propagation with the EIM effective index method, it is shown that the device is capable of smoothly switching concurrently or, in turn, the four modes mentioned above from any input to any output with insertion loss (IL) being smaller than 0.1 dB at the central wavelength 1.55 <span>(mu)</span>m, and crosstalk (CT) being from −48 dB to −19 dB for the entire C band.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142889620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}