Optical and Quantum Electronics最新文献_第10页

A comprehensive analysis of silicon photonic switching chips 硅光子开关芯片综合分析

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-13 DOI: 10.1007/s11082-025-08176-2

Hasnain Ahmad, Muhammad Majid Gulzar, Salman Habib, Ijaz Ahmed, Saddam Hussain Malik, Muhammad Kamran Bhatti

{"title":"A comprehensive analysis of silicon photonic switching chips","authors":"Hasnain Ahmad, Muhammad Majid Gulzar, Salman Habib, Ijaz Ahmed, Saddam Hussain Malik, Muhammad Kamran Bhatti","doi":"10.1007/s11082-025-08176-2","DOIUrl":"10.1007/s11082-025-08176-2","url":null,"abstract":"<div>Recently, interest has increased in the flexibility of silicon-integrated photonic system design with the complementary metal-oxide semiconductor (CMOS) advancements, which enables low-cost and large-scale production. The photonic switch is an essential component of optoelectronic microchips, with widespread applications in fibre optic telecommunications and communication systems, optical data storage, and monitoring devices like LiDAR. Most silicon-integrated photonic switches use either the thermo-optical or scattering effect in transmission to send signals in different ways. However, the transmission scattering phenomenon is limited by a negligible change in refractive index, while the thermo-optical action results in significant energy consumption. These effects are inefficient as they require continuous power consumption, even when toggling is unnecessary. Phase-change metals (PCMs) were implemented into silicon-integrated optic switching as a means of addressing such limitations. In this study, we categorised silicon-integrated optical switches by their internal mechanisms and discussed the most advanced literature on the subject. We additionally take a look at the latest research on PCM-integrated optical switches built on silicon. There is also a comparison and discussion of the benefits and drawbacks of embedded optical switches that either utilize or do not use PCMs.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 4","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143824598","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Investigation on photonic generation of narrow-width frequency-doubled Nyquist pulses based on spectrum manipulation 基于频谱处理的窄宽倍频奈奎斯特脉冲光子产生研究

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-13 DOI: 10.1007/s11082-025-08171-7

Jin Yuan, Xiuxiu Xu, Ying Mei, Jinbo Liu, Zengrui Li

{"title":"Investigation on photonic generation of narrow-width frequency-doubled Nyquist pulses based on spectrum manipulation","authors":"Jin Yuan, Xiuxiu Xu, Ying Mei, Jinbo Liu, Zengrui Li","doi":"10.1007/s11082-025-08171-7","DOIUrl":"10.1007/s11082-025-08171-7","url":null,"abstract":"<div>A scheme for generating Nyquist pulses with a 12-line doubled flat optical frequency comb (OFC) is presented by cascading two two-electrode Mach–Zehnder modulators (De-MZM). The first De-MZM1 can operate in the optical carrier suppression modulation state to obtain a 4-line OFC, which is then introduced into the optical interleaver phase-locked; the resulting 4-line OFC serves as the driving signal into the De-MZM2 for the secondary modulation to generate more comb lines. OFC amplitude is adjusted to satisfy the sinc-shaped Nyquist waveform characteristics by fixing two De-MZM modulation indices. Theoretical analysis and simulation results reveal that a 20 GHz narrow-amplitude Nyquist pulse corresponding to a 12-line OFC can be generated using a 10 GHz radio-frequency drive signal. Impacts of bias point drift of the two modulators are discussed and tolerance ranges are determined. 10 GHz, 15 GHz, and 30 GHz Nyquist pulses are also generated based on the above theory. The approach offers the possibility of generating Nyquist pulses, facilitating their application in channel multiplexing.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 4","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143824600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High Q-factor and single mode integrated optic racetrack ring resonator for the sensing applications 用于传感应用的高q因子单模集成光学赛道环形谐振器

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-13 DOI: 10.1007/s11082-025-08146-8

Venkateswara Rao Kolli, Indira Bahaddur, Srinivas Talabattula

引用次数: 0

Electronic, optical, and phonons properties of GaAs1-xPx under the effect of pressure 压力作用下GaAs1-xPx的电子、光学和声子性质

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-13 DOI: 10.1007/s11082-025-08175-3

Elkenany Brens Elkenany, Hasan B. Albargi, R. Dhahri, A. M. Al-Syadi

{"title":"Electronic, optical, and phonons properties of GaAs1-xPx under the effect of pressure","authors":"Elkenany Brens Elkenany, Hasan B. Albargi, R. Dhahri, A. M. Al-Syadi","doi":"10.1007/s11082-025-08175-3","DOIUrl":"10.1007/s11082-025-08175-3","url":null,"abstract":"<div>The longitudinal and transversal phonons frequencies (ωLo, ωTo) of GaAs1-xPx alloy were calculated. The electronic properties such as energy band gaps (Eg-L, Eg-Γ, and Eg-X) of GaAs1-xPx have been determined. The optical properties of refractive index (n), optical dielectric constant (ε∞), and static dielectric constant (ε0) of GaAs1-xPx were studied. The effect of pressure on the studied properties has been investigated. The empirical pseudopotential approach (EPM) with virtual crystal approximation (VCA) was used in our calculations. We have determined the pressure transition points from direct to indirect semiconductors for different compositions of the studied alloy. The phonon frequency modes were increased by increasing pressure. Our results are compatible with available experimental data for the electronic, optical, and phonon properties. The calculated results display that the alloy under investigation can be used in optoelectronic applications under high pressure.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 4","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143824597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Two-dimensional confined topological modes in all dielectric guided mode resonance structure through surface features 二维受限拓扑模式的所有介电导模谐振结构通过表面特征

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-12 DOI: 10.1007/s11082-025-08166-4

Swathy Ramachandra, Maclean Paul Menezes, Vamsi Krishna Tumuluru, Raghavendra G. Kulkarni, Rajat K. Sinha, Kaustav Bhowmick

{"title":"Two-dimensional confined topological modes in all dielectric guided mode resonance structure through surface features","authors":"Swathy Ramachandra, Maclean Paul Menezes, Vamsi Krishna Tumuluru, Raghavendra G. Kulkarni, Rajat K. Sinha, Kaustav Bhowmick","doi":"10.1007/s11082-025-08166-4","DOIUrl":"10.1007/s11082-025-08166-4","url":null,"abstract":"<div>Guided mode resonance (GMR) structures offer simplicity and have spectral resonance capabilities such as narrowband resonance, high Q-factor, whereas topological surface features offer spatial light control. In this paper, we explore the integration of the GMR structures with topological photonics to achieve extreme two-dimensional (2D) spatial confinement of light. With this integration, we propose a novel design that leverages discontinuous surface features (crosscut) to excite Jackiw—Rebbi (JR) solution, which describes relationship between Dirac equation and topological insulators. Finite element modelling, considering various structural and material parameters, demonstrate a 40% improvement in light confinement compared to benchmark GMR structures, with a calculated full width half maximum (FWHM) of the confined optical mode measured to be approximately ~ 18 ± 3 nm. This FWHM value represent the spatial extent of the confined optical field, indicating the achieved field localization in the proposed structures. This significant enhancement showcases the potential of our approach for applications demanding ultra- precise spatial resolution. Furthermore, tolerance studies reveal good robustness to variations in the dimensions of the crosscut and angle of polarization, ensuring practical feasibility. The proposed structure exhibited good tolerance of up to ~ ± 10%. This work paves the way for highly confined 2D light manipulation within all- dielectric platforms, opening exciting avenues for nanophotonic devices and applications requiring light localization.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 4","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143821944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Simulation and optimization of MAPbI3/MASnI3 heterojunction solar cell perovskite with double ETL by SCAPS-1D Software 利用SCAPS-1D软件对具有双ETL的MAPbI3/MASnI3异质结钙钛矿太阳能电池进行仿真与优化

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-12 DOI: 10.1007/s11082-025-08138-8

Khadija Boughanbour, Mustapha Sahal, Essaadia Oublal, Naveen Kumar, Youssef Belkassmi, Abdelhadi Kotri

{"title":"Simulation and optimization of MAPbI3/MASnI3 heterojunction solar cell perovskite with double ETL by SCAPS-1D Software","authors":"Khadija Boughanbour, Mustapha Sahal, Essaadia Oublal, Naveen Kumar, Youssef Belkassmi, Abdelhadi Kotri","doi":"10.1007/s11082-025-08138-8","DOIUrl":"10.1007/s11082-025-08138-8","url":null,"abstract":"<div>In this study, we explored the characteristics of FTO/TiO2/ZnO/MASnI3/MAPbI3/Au solar cells through SCAPS-1D modeling. Initially, we focused on modeling a conventional solar cell based on a CH3NH3PbI3 layer, a bilayer Electron Transport Layer, and a Spiro-OMETAD Hole Transport Layer. The model was based on experimental data and demonstrated excellent concordance, yielding a PCE of approximately 17.17%, closely aligning with reported literature values. The primary studied structure was meticulously designed and thoroughly evaluated using the SCAPS-1D simulator, aiming to uncover its potential for achieving outstanding performance metrics. Key parameters, including thickness, doping concentration, and defect density of MAPbI3 and MASnI3 layers were investigated and systematically optimized. These optimizations enabled us to achieve an unprecedented efficiency of 41.06%. Furthermore, this study underscores the pivotal role of interface engineering and material quality enhancement in optimizing solar cell performance and highlights pathways to further improve the efficiency and stability of PSCs.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 4","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143821943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Non-classical correlations versus quantum coherence in graphene lattice within the Hubbard model under intrinsic decoherence 非经典相关与量子相干石墨烯晶格在哈伯德模型下的内在退相干

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-09 DOI: 10.1007/s11082-025-08182-4

Zakaria Bouafia, Hamza Mhamdi, Mostafa Mansour

{"title":"Non-classical correlations versus quantum coherence in graphene lattice within the Hubbard model under intrinsic decoherence","authors":"Zakaria Bouafia, Hamza Mhamdi, Mostafa Mansour","doi":"10.1007/s11082-025-08182-4","DOIUrl":"10.1007/s11082-025-08182-4","url":null,"abstract":"<div>In this study, we explore the interplay between non-classical correlations and quantum coherence in graphene, modeled within the Hubbard framework, under the impact of the intrinsic decoherence effects. Employing concurrence (({mathcal {C}})) and uncertainty-induced nonlocality (({mathcal {U}}_{C})), we estimate the extent of entanglement and non-classical correlations, respectively, in the considered system, whereas quantum coherence is quantified through relative entropy of coherence (({mathcal {C}}_r)). We assume that the graphene system is initially prepared in an extended Werner-like state and we examine the effect of purity of the initial state (p), Bloch angle ((theta)), nearest-neighbor (V) and on-site (U) Coulomb interactions, and intrinsic decoherence ((gamma)) on the dynamics of the three metrics of quantum correlations and coherence in the system. Our findings demonstrate that the (gamma) rates negatively impact quantum resources in graphene. However, p and (theta) play a pivotal role in generating and sustaining these resources, mitigating decoherence’s adverse effects over time. Additionally, our analysis underscores the crucial influence of U and V, which not only enhance quantum correlations and coherence but also stabilize the system against oscillatory behavior. By carefully optimizing U and V, it is possible to suppress the effects of intrinsic decoherence, ensuring robust quantum correlations and coherence within graphene.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 4","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143801251","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Size and microstructure effect of silica nanosphere assemblies on antireflective capability in film solar cell applications 二氧化硅纳米球组件的尺寸和微观结构对薄膜太阳能电池抗反射性能的影响

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-09 DOI: 10.1007/s11082-025-08190-4

Yury E. Geints

引用次数: 0

Novel PEVA/PMMA-based nanocomposites containing ZnO–Co nanoparticles: investigation of optical, dielectric and electrical properties for energy storage and organic optoelectronic devices 含ZnO-Co纳米粒子的新型PEVA/ pmma基纳米复合材料：用于储能和有机光电器件的光学、介电和电学性能研究

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-05 DOI: 10.1007/s11082-025-08129-9

Eman Aldosari, E. M. Abdelrazek, M. O. Farea, Omer Nur, Maamon A. Farea, A. Rajeh

{"title":"Novel PEVA/PMMA-based nanocomposites containing ZnO–Co nanoparticles: investigation of optical, dielectric and electrical properties for energy storage and organic optoelectronic devices","authors":"Eman Aldosari, E. M. Abdelrazek, M. O. Farea, Omer Nur, Maamon A. Farea, A. Rajeh","doi":"10.1007/s11082-025-08129-9","DOIUrl":"10.1007/s11082-025-08129-9","url":null,"abstract":"<div>In the present study, Polyethylene vinyl acetate (PEVA) and Polymethyl methacrylate (PMMA) blend-based nanocomposites were prepared by using various concentrations of Co-doped ZnO (ZnO–Co) nanofiller to investigate the impact of nanofiller addition on specific physical attributes and structural changes. The XRD study revealed that the PEVA/PMMA is a semicrystalline blend, and ZnO–Co incorporation degrades its crystallinity. The complexation behaviour of our as-prepared PEVA/PMMA-ZnO–Co nanocomposites is displayed in the FTIR spectra. UV–visible spectroscopy studies were used to estimate the optical properties (i.e., Urbach energy, Eg direct and Egi indirect). Moreover, the direct and indirect energy gap decreased from 5.18 and 4.82 eV for the pure blend to 4.21 and 3.24 eV for Blend-6% ZnO–Co, respectively. In contrast, the Urbach energy increased from 0.258 to 0.547 with a 6% ZnO–Co concentration. The frequency-dependent AC conductivity of the PEVA/PMMA-ZnO–Co was utilized to evaluate the dynamic ion behaviour of all the as-prepared samples. Additionally, frequency graphs of the M′ and M″, ε′ and ε″ at various concentrations and room temperature (RT) were presented. According to the optical and dielectric results, the generated PEVA/PMMA-ZnO–Co nanocomposites may be suitable for energy storage devices like supercapacitors and organic optoelectronic devices.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 4","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143778167","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Evolution characteristics of a partially coherent modified anomalous vortex beam through oceanic turbulence 海洋湍流中部分相干修正异常涡束的演变特征

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-03 DOI: 10.1007/s11082-025-08164-6

Faroq Saad, Halima Benzehoua, Ahmed Abdulrab Ali Ebrahim, Abdelmajid Belafhal

引用次数: 0