压力作用下GaAs1-xPx的电子、光学和声子性质

IF 4 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2025-04-13 DOI:10.1007/s11082-025-08175-3

Elkenany Brens Elkenany, Hasan B. Albargi, R. Dhahri, A. M. Al-Syadi

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引用次数: 0

摘要

计算了GaAs1-xPx合金的纵向和横向声子频率（ωLo, ωTo）。测定了GaAs1-xPx的能带隙（Eg- l、Eg-Γ和Eg- x）等电子性质。研究了GaAs1-xPx的折射率(n)、光学介电常数（ε∞）和静态介电常数（ε0）的光学性质。研究了压力对所研究性能的影响。在我们的计算中使用了经验伪势方法（EPM）和虚拟晶体近似（VCA）。我们确定了不同成分合金从直接半导体到间接半导体的压力转变点。声子的频率模式随着压力的增加而增加。我们的结果与现有的电子、光学和声子性质的实验数据一致。计算结果表明，所研究的合金可用于高压下的光电应用。

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Electronic, optical, and phonons properties of GaAs1-xPx under the effect of pressure

The longitudinal and transversal phonons frequencies (ω_Lo, ω_To) of GaAs_1-xP_x alloy were calculated. The electronic properties such as energy band gaps (Eg-L, Eg-Γ, and Eg-X) of GaAs_1-xP_x have been determined. The optical properties of refractive index (n), optical dielectric constant (ε_∞), and static dielectric constant (ε₀) of GaAs_1-xP_x were studied. The effect of pressure on the studied properties has been investigated. The empirical pseudopotential approach (EPM) with virtual crystal approximation (VCA) was used in our calculations. We have determined the pressure transition points from direct to indirect semiconductors for different compositions of the studied alloy. The phonon frequency modes were increased by increasing pressure. Our results are compatible with available experimental data for the electronic, optical, and phonon properties. The calculated results display that the alloy under investigation can be used in optoelectronic applications under high pressure.

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.