Optical and Quantum Electronics最新文献_第9页

E-mode p-channel GaN/AlGaN HFETs with κ-Ga2O3 as gate oxide 以κ-Ga2O3为栅极氧化物的e模p沟道GaN/AlGaN hfet

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-20 DOI: 10.1007/s11082-025-08214-z

Wenchao Ma, Wei Wang, Jin Wang, Rui Wang, Ting Zhi, Irina N. Parkhomenko, Fadei F. Komarov, Dunjun Chen, Rong Zhang, Junjun Xue

{"title":"E-mode p-channel GaN/AlGaN HFETs with κ-Ga2O3 as gate oxide","authors":"Wenchao Ma, Wei Wang, Jin Wang, Rui Wang, Ting Zhi, Irina N. Parkhomenko, Fadei F. Komarov, Dunjun Chen, Rong Zhang, Junjun Xue","doi":"10.1007/s11082-025-08214-z","DOIUrl":"10.1007/s11082-025-08214-z","url":null,"abstract":"<div>In this article, a κ-Ga2O3 cap layer is introduced as gate dielectric to achieve E-mode GaN p-channel heterostructure FETs (p-HFETs). Due to the high spontaneous polarization of κ-Ga2O3, 2DEG that up to 1.51 × 1014 cm− 2 are induced at the κ-Ga2O3/GaN interface. Based on device simulations, the threshold voltage (VTH) can reach a high value of -2.42 V and maintain negative even when the thickness of the GaN channel (tch) is increased to 50 nm. By interconnecting base and gate to form a double-gate (DG) structure, the control of 2DEG and 2DHG can be realized. The results show that p-HFETs with DG structure not only exhibit a threefold increase in the on-current (ION) while maintaining the E-mode operation, reaching 24.87 mA/mm with VTH of -1.25 V, but also reduce the gate leakage current at forward bias. Furthermore, the utilization of κ-Ga2O3 as the gate dielectric results in an enhancement of the gate breakdown voltage to -35.8 V. The proposed DG p-HFETs represent a promising approach to achieving high-performance enhancement mode p-channel GaN devices.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143852576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

MXene coated concave shaped microchannel PCF SPR biosensor for the detection of HIV and sickle cell anaemia MXene包被凹形微通道PCF SPR生物传感器用于HIV和镰状细胞性贫血的检测

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-20 DOI: 10.1007/s11082-025-08123-1

Preethi Krishnan, Akash Khamaru, Ajeet Kumar

{"title":"MXene coated concave shaped microchannel PCF SPR biosensor for the detection of HIV and sickle cell anaemia","authors":"Preethi Krishnan, Akash Khamaru, Ajeet Kumar","doi":"10.1007/s11082-025-08123-1","DOIUrl":"10.1007/s11082-025-08123-1","url":null,"abstract":"<div>The paper presents the analysis and discussions on a Surface Plasmon resonance (SPR) based Photonic Crystal Fiber (PCF) Refractive index (RI) Biosensor, designed specifically to detect two of the most widespread diseases—HIV-caused AIDS and Sickle cell anaemia. The detection is purely dependent on the RI of the affected cells (1.42 for HIV and 1.38 for Sickle cell anaemia), compared to 1.35 for normal cells. The proposed RI biosensor has concave-shaped microchannels on either side of the PCF acting as a channel, where the plasmonic material interacts with the bio-analytes of HIV-infected and sickle cells. Additionally, a layer of MXene, an emerging 2D plasmonic enhancer is coated on the microchannels, to enhance the sensor performance in terms of sensitivity and confinement loss. Moreover, the optimized structure achieved wavelength sensitivities of 10,571.43 nm/RIU and 3500 nm/RIU for the Gold PCF sensor, and 14,142.86 nm/RIU and 4000 nm/RIU for MXene-Gold PCF sensor for HIV-infected cell and Sickle cell anaemia, respectively. Hence, the proposed SPR biosensor using MXene has the potential for the early detection of HIV and Sickle cell anaemia.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143852562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Feasibility discussion of quantum cryptography for Internet of Things security: a literature review 量子密码学用于物联网安全的可行性讨论：文献综述

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-16 DOI: 10.1007/s11082-025-08168-2

Yuer Yang, Yifeng Lin, Jiancheng Xiao, Zhihua Zhong

引用次数: 0

Deep insights into the coupled optoelectronic analysis of ETL thin films and photovoltaic analysis of CsPbI3-based perovskite solar cell using SCAPS-1D simulations 利用 SCAPS-1D 模拟深入了解 ETL 薄膜的耦合光电分析和基于 CsPbI3 的过氧化物太阳能电池的光电分析

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-16 DOI: 10.1007/s11082-025-08200-5

Salah Eddine Boussaada, Younes Mouchaal, Houaria Riane, Abdelbacet Khelil

{"title":"Deep insights into the coupled optoelectronic analysis of ETL thin films and photovoltaic analysis of CsPbI3-based perovskite solar cell using SCAPS-1D simulations","authors":"Salah Eddine Boussaada, Younes Mouchaal, Houaria Riane, Abdelbacet Khelil","doi":"10.1007/s11082-025-08200-5","DOIUrl":"10.1007/s11082-025-08200-5","url":null,"abstract":"<div>Cesium lead iodide (CsPbI3) is a type of perovskite compound used in solar cells. CsPbI3 has a unique structure that efficiently absorbs sunlight, making it highly efficient for generating power. It can be made using low-cost methods and adjusted to capture different parts of sunlight. However, its stability in varying conditions is a challenge that researchers are working to overcome. CsPbI3 perovskite shows promise for creating efficient and affordable solar cells, though stability remains an area of focus. In this study, the thicknesses, optical gaps and electron mobility of the electron transport layer (ETL) derived from a mixture of oxides: SnO2 and CoO (SnCoOx), were calculated using experimental UV-Vis spectrometry and Hall Effect measurements. The results were then used as input data for the simulation of CsPbI3-based s using SCAPS 1-D software. In addition, several materials were compared as electron transport layers (ETLs), including C60, CdS, IGZO, PCBM, ZnO, CdZnS and TiO2, comparing them initially with SnCoOx as well as organic and inorganic hole transport materials (HTLs) such as Spiro-OMeTAD, PEDOT: PSS, P3HT, CuO, CuI and CuO2. The results showed that SnCoOx as ETL and Cu2O as HTL are the most suitable materials among those studied. In addition, device performance was enhanced by optimizing various parameters such as back electrode work function, absorber thickness, doping density, defect density, series and shunt resistances, and temperature. Under optimal conditions, a conversion efficiency of 21.34% was achieved for the FTO/(75%)SnO2(25%)Co/CsPbI3/Cu2O/Au solar cell. This investigation illustrates the potential of SnCoOx as an ETL for the production of renewable energy that is free of toxicity.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143835685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exciton generation using sensitizers derived from floral and foliar sources for dye sensitized solar cells 染料敏化太阳能电池使用源自花和叶源的敏化剂产生激子

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-16 DOI: 10.1007/s11082-025-08094-3

Vishnupriya Vijendran, Subaharini Ramalingam, Janarthanan Balasundaram, A. Kumar, Mohammad Shahzad Samdani, R. Priya, M. Saravanakumar

{"title":"Exciton generation using sensitizers derived from floral and foliar sources for dye sensitized solar cells","authors":"Vishnupriya Vijendran, Subaharini Ramalingam, Janarthanan Balasundaram, A. Kumar, Mohammad Shahzad Samdani, R. Priya, M. Saravanakumar","doi":"10.1007/s11082-025-08094-3","DOIUrl":"10.1007/s11082-025-08094-3","url":null,"abstract":"<div>Solar cells are pivotal for harvesting renewable energy in order to build a more environmentally friendly and sustainable energy landscape. There is a pressing need for more research to advance renewable energy technology, as the use of environmentally benign materials in solar cells has not kept up with that of its conventional counterparts. This study looked at using inexpensive, eco-friendly plants and flowers such as Tecoma stans, Tridax procumbens, Nerium oleander, and Delonix Regia as natural colours as a sensitizer. Alongside with the natural dyes, a green approach is adopted by encompassing the TiO2 photoanode, I−/I3− redox couple electrolyte and electrode made with graphite pencils. Consequently, the best optimized sensitizer was anthocyanin pigmented Delonix Regia with 0.897% of PCE. This work shown that DSSCs can be effectively combined with natural sensitizers made from readily available plant materials, which could lead to a wider range of solar cell applications.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143835547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Novel terahertz biosensor integrating MXene/black phosphorus/graphene on metasurface architecture for enhanced pregnancy detection 在超表面结构上集成 MXene/黑磷/石墨烯的新型太赫兹生物传感器，用于增强妊娠检测功能

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-16 DOI: 10.1007/s11082-025-08205-0

Jacob Wekalao, Oumaymah Elamri

引用次数: 0

Hybrid optimizing optoelectronic properties: structural analysis of silicon and germanium-modified PCPDTBT polymers 混合优化光电特性：硅和锗改性 PCPDTBT 聚合物的结构分析

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-16 DOI: 10.1007/s11082-025-08127-x

Amel Azazi

{"title":"Hybrid optimizing optoelectronic properties: structural analysis of silicon and germanium-modified PCPDTBT polymers","authors":"Amel Azazi","doi":"10.1007/s11082-025-08127-x","DOIUrl":"10.1007/s11082-025-08127-x","url":null,"abstract":"<div>The molecular structure and optoelectronic characteristics of PCPDTBT polymers modified with silicon (PSBTBT) and germanium (PGeDTBT) substituents were investigated using density functional theory (DFT) and time-dependent DFT (TD-DFT) computational methods. The results demonstrate that incorporating inorganic elements such as silicon or germanium into the polymer backbone significantly enhances structural, electronic, and optical properties. When silicon and germanium are added, the bridge length increases (1.453858 Å for PSBTBT and 1.453544 Å for PGeDTBT compared to 1.452408 Å for PCPDTBT). This structural modification enhances chain rigidity and improves intramolecular charge transfer (DCT PGeDTBT > DCT PCPTBT > DCT PSBTBT), promoting greater electron mobility. The bandgap energies increase slightly to 1.71 eV for PSBTBT and 1.70 eV for PGeDTBT, up from 1.62 eV for PCPDTBT, facilitating broader absorption in the visible spectrum. Optical analysis reveals that PSBTBT and PGeDTBT exhibit two main absorption peaks: 300 nm and 682 nm for PSBTBT and 325 nm and 715 nm for PGeDTBT, while the maximum absorption peak of PCPDTBT is located at 758 nm. The exciton binding energy (EB) also increases, from 0.32 eV for PCPDTBT to 0.38 eV for PSBTBT and 0.41 eV for PGeDTBT resulting in more efficient charge separation. These enhancements, along with higher open-circuit voltages (1.29 eV for PSBTBT and 1.26 eV for PGeDTBT compared to 1.22 eV for PCPDTBT), make these hybrid polymers promising candidates for organic photovoltaic applications. The findings provide valuable insights into structure–property relationships of novel organic–inorganic hybrid materials, paying the way for advancements in organic photovoltaic technology.<h3>Graphical abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143835688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A computational study of metal hydrides base on barium for developing solid-state hydrogen storage 用于开发固态储氢的钡基金属氢化物计算研究

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-16 DOI: 10.1007/s11082-025-08183-3

Youssef Didi, Soufiane Bahhar, Abdellah Tahiri, Mohamed Naji, Abdelilah Rjeb, Rachid Ahfir

引用次数: 0

Exploring triangular prism networks TP(s) through the connection number approach 通过连接数方法探索三角棱镜网络TP(s)

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-13 DOI: 10.1007/s11082-025-08170-8

Muhammad Mudassar Hassan, Xiang-Feng Pan

{"title":"Exploring triangular prism networks TP(s) through the connection number approach","authors":"Muhammad Mudassar Hassan, Xiang-Feng Pan","doi":"10.1007/s11082-025-08170-8","DOIUrl":"10.1007/s11082-025-08170-8","url":null,"abstract":"<div>A triangular prism is a geometric object that has three rectangular sides and two triangular bases in three dimensions. It disperses light by separating various wavelengths and exposing the spectrum components of a beam, which is useful in physics and chemistry. The purpose of the (TP-)network in spectroscopy is to examine the unique emission or absorption spectra of various substances. Triangular prism networks are essential because they improve communication, transportation, and visualization technologies by providing realistic 3D representations, increasing traffic flow, and enabling effective signal transmission. The highly ordered and porous structure of the triangular prism network can be used to create photonic crystals and electronic devices with unique optical and electronic properties. In addition, the triangular prism network may be used to represent quantum states, conductivity, percolation, and network dynamics in physics. The main objective of this study is to compute the connection number-based Zagreb indices, which are used to assess the structural complexity of a triangular prism network. The calculated results are the (ABCc-)index, (GAc-)index, (AZc-)index, (Hc-)index, (ZC_{1}), (ZC_{2}), and (ZC_{1}^{*}). The connection number derived using the vertex degree approach is used to meet the study’s purpose. The conclusion is preceded by a visual comparison of statistical data.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 4","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143824595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Behavior of Bessel–Whittaker–Gaussian beams through a paraxial optical system 贝塞尔-惠特克-高斯光束通过近轴光学系统的行为

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-13 DOI: 10.1007/s11082-025-08181-5

F. Iraoui, F. Khannous, A. Belafhal

引用次数: 0