Optical and Quantum Electronics最新文献_第9页

Investigating a sulfonate-rich carbon dot as a sensitizer in dye-sensitized solar cells 研究富磺酸碳点在染料敏化太阳能电池中的敏化作用

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-01-06 DOI: 10.1007/s11082-024-07988-y

Muhammad Haniff Mokti, Hairul Anuar Tajuddin, M. H. Buraidah, Simon Maher, Abdur Rahman, Ninie Suhana Abdul Manan, Shameer Hisham, Zanariah Abdullah

{"title":"Investigating a sulfonate-rich carbon dot as a sensitizer in dye-sensitized solar cells","authors":"Muhammad Haniff Mokti, Hairul Anuar Tajuddin, M. H. Buraidah, Simon Maher, Abdur Rahman, Ninie Suhana Abdul Manan, Shameer Hisham, Zanariah Abdullah","doi":"10.1007/s11082-024-07988-y","DOIUrl":"10.1007/s11082-024-07988-y","url":null,"abstract":"<div>Carbon dots (CDs) synthesized using the direct heating method were examined as potential sensitizers in dye-sensitized solar cells (DSSCs). The energy gap (Eg) of green, yellow, orange, and red emission CDs (G-, Y-, O-, and R-CDs) was modulated by varying the amount of concentrated sulfuric acid. Ultraviolet-visible (UV-Vis) spectroscopy was employed to ascertain the Eg of these CDs. R-CD synthesized with 1.35 mL (24.82 mmol) of concentrated sulfuric acid exhibited the lowest Eg of 2.07 eV. The Lowest Unoccupied Molecular Orbital (LUMO) and Highest Occupied Molecular Orbital (HOMO) of these synthesized CDs ranged from 2.98 to 3.14 eV and 5.05 to 5.60 eV, respectively. The TiO2 electrode was sensitized with R-CD under different conditions including varying time, temperature, and concentrations. The resulting DSSC exhibited an efficiency of 0.16%, a short-circuit current density (JSC) of 0.61 mA/cm2, and an open-circuit voltage (VOC) of 0.41 V. These parameters were obtained for DSSC with the TiO2 electrode sensitized with R-CD for 2 hours at 40 °C using a 10 mg/mL solution of R-CD.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Highly coherent on-chip mid-infrared supercontinuum generation from 1.5 to 25 μm in CdTe-based Rib waveguide 在基于cdte的Rib波导中产生1.5 ~ 25 μm的高相干片上中红外超连续谱

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-01-06 DOI: 10.1007/s11082-024-08007-w

Deepak Garg, Ajeet Kumar

{"title":"Highly coherent on-chip mid-infrared supercontinuum generation from 1.5 to 25 μm in CdTe-based Rib waveguide","authors":"Deepak Garg, Ajeet Kumar","doi":"10.1007/s11082-024-08007-w","DOIUrl":"10.1007/s11082-024-08007-w","url":null,"abstract":"<div>We present design and computational analysis of a rib waveguide composed of a core of CdTe chalcogenide glass having upper and lower cladding of Zinc Selenide (ZnSe) for high coherence on-chip supercontinuum (SC) generation. CdTe chalcogenide glass, known for its wide transparency range extending from visible to mid-infrared region, is utilized in our design to achieve broad spectral coverage. Additionally, its higher non-linear refractive index enhances the supercontinuum generation efficiency. Using Finite Element Method (FEM), we conducted the dispersion engineering by analyzing the influence of waveguide geometrical parameters. This optimization is aimed at minimizing the dispersion values and to obtain a flat top dispersion profile. The proposed design offers a Zero Dispersion Wavelength (ZDW) approximately near 2.6 μm. Our simulation reports a supercontinuum spectrum broadening covering 1.5–25 μm, when pumped with 2.5 μm secant hyperbolic pulses having pulse width 50 fs and peak power 16 kW in only 1 mm length of waveguide. The high coherence of the final generated spectra positions our proposed design as a promising candidate for various non-linear applications including non-linear microscopy, optical coherence tomography, frequency comb generation and non-linear spectroscopy.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142939173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Quantum noise stream cipher based on optical digital to analog conversion 基于光数模转换的量子噪声流密码

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-01-06 DOI: 10.1007/s11082-024-08024-9

Zhao-Yun Li, Yu-Kun Zhang, Hai-Yue Pang, Qing-Song Luo, Xin Zhang, Zhi-Yong Tao, Ya-Xian Fan

引用次数: 0

Optoelectronic and anti-cancerous activity of Indole-7-carboxaldehyde 吲哚-7-甲醛的光电活性和抗癌活性

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-01-04 DOI: 10.1007/s11082-024-08002-1

Shradha Lakhera, Meenakshi Rana, Vivek Dhuliya, Papia Chowdhury

{"title":"Optoelectronic and anti-cancerous activity of Indole-7-carboxaldehyde","authors":"Shradha Lakhera, Meenakshi Rana, Vivek Dhuliya, Papia Chowdhury","doi":"10.1007/s11082-024-08002-1","DOIUrl":"10.1007/s11082-024-08002-1","url":null,"abstract":"<div>Organic compounds have earned remarkable attention in the field of optoelectronics. Their flexible properties make them of high utility. Herein, we have tried to demonstrate the optoelectronic and biological importance of an organic indole derivative Indole-7-carboxaldehyde (I7C) with the help of density functional theory. Different applications like nonlinear optics (NLO), photovoltaics, light emitting activity, gas sensing, and anti-viral activity of I7C have been covered in this study. The high value of first-order hyperpolarizability (491.54 au) helped in the determination of the I7C as a potential NLO material. Different photovoltaic characteristics calculated for I7C like open-circuit voltage (2.33 V), fill factor (0.93), and light harvesting efficiency (42%), were eligible to justify the superior characteristics of I7C to be used as photosensitizing material in photovoltaic devices. The computed values of hole and electron reorganization energies are − 175.34 eV and − 171.43 eV respectively and radiative lifetime of 2.04 ns supported the light-emitting behavior of I7C. The ammonia sensing capability of the I7C was determined using the adsorption energy (540.14 eV). Finally, the molecular docking analysis of I7C with carcinogenetic protein cytochrome P450 2A6 enzyme gave the well-inhibiting efficiency of I7C against the cancer proteins and justifies the anti-cancerous nature of I7C. Thus, the overall study was successful in theoretically predicting the optoelectronic and biological importance of the title molecule.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925702","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Annealing effect on structural, morphological, optical, and electrical properties of spin coated ZnS thin films for photovoltaic application 退火对光伏用自旋镀ZnS薄膜结构、形貌、光学和电学性能的影响

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-01-04 DOI: 10.1007/s11082-024-07997-x

Md. Hasan Ali, Md. Faruk Hossain, Md. Mahabub Hossain, Md. Dulal Haque, Abu Zafor Md. Touhidul Islam

{"title":"Annealing effect on structural, morphological, optical, and electrical properties of spin coated ZnS thin films for photovoltaic application","authors":"Md. Hasan Ali, Md. Faruk Hossain, Md. Mahabub Hossain, Md. Dulal Haque, Abu Zafor Md. Touhidul Islam","doi":"10.1007/s11082-024-07997-x","DOIUrl":"10.1007/s11082-024-07997-x","url":null,"abstract":"<div>The conventional cadmium sulfide (CdS) window/buffer layer in photovoltaic cells is environmentally hazardous because of the poisoning of cadmium (Cd). Alternatively, ZnS is more environmentally friendly than CdS and has a larger band gap, which makes it a potential candidate for window/buffer layers. In this study, ZnS thin films were deposited on glass substrates by a spin coating process and annealed at three (250 °C, 350 °C, and 450 °C) different temperatures. The XRD patterns confirmed that all the spin coated films had mixed wurtzite and cubic structures with a preferred orientation along the (111) plane of the predominant cubic phase. The highest crystallite size and lowest dislocation density were found at 350 °C annealing temperature due to the narrow, sharp and high intensity diffraction peak compared with those at 250 °C and 450 °C annealing temperatures. The SEM results indicate that the surface of the ZnS film annealed at 350 °C has a better surface coverage area with good uniformity, and is more homogeneous with a minimum amount of pinholes, voids and cracks than the other samples annealed at 250 °C, and 450 °C. The estimated optical band gap was determined to be between 3.957 and 3.991 eV. The calculated electrical resistivity values are on the order of ({10}^{4}) Ω cm. All the findings revealed that the film annealed at 350 °C presented good material properties for utilizing as buffer layer in thin film solar cells.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dynamics of attosecond solitons in inhomogeneous optical media governed by fifth-order dispersion 五阶色散控制的非均匀光学介质中阿秒孤子动力学

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-01-04 DOI: 10.1007/s11082-024-08010-1

Houria Triki, Thokala Soloman Raju

引用次数: 0

Universal multigas evanescent field absorption sensor in mid IR based on SOS slot waveguide 基于SOS缝隙波导的中红外通用多气体倏逝场吸收传感器

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-01-04 DOI: 10.1007/s11082-024-08004-z

Karishma Joshi, Bharat Lal Meena, Kanchan Gehlot

{"title":"Universal multigas evanescent field absorption sensor in mid IR based on SOS slot waveguide","authors":"Karishma Joshi, Bharat Lal Meena, Kanchan Gehlot","doi":"10.1007/s11082-024-08004-z","DOIUrl":"10.1007/s11082-024-08004-z","url":null,"abstract":"<div>In this work, the design of a novel universal multigas evanescent field absorption sensor based on a silicon-on-sapphire slot waveguide is proposed for sensing trace gases in the mid-infrared. The design features a small waveguide cross-section of 0.74 (upmu)m (times 1.4) (upmu)m and waveguide length of 0.33 cm. The multigas sensor is optimized for sensing carbon dioxide, nitrous oxide, ammonia, and methane gas by operating the waveguide sensor at their characteristic absorption wavelengths of 2.76, 2.86, 3.00, and 3.315 (upmu)m, respectively, using the same waveguide structure. A high evanescent field ratio of approximately 50(%) has been obtained for all four gases. The sensitivity of the trace gas sensor is estimated as 4.04(times 10^{-5}), 4.17(times 10^{-5}), 4.88(times 10^{-5}), 118.71 (times 10^{-4}) (hbox {ppm}^{-1}), and the limits of detection are obtained as 8.80, 8.44, 7.25 and 0.25 ppb for carbon dioxide, nitrous oxide, ammonia, and methane gas molecules, respectively. The universal multigas sensor shows better sensitivity than the sensor based on conventional strip waveguide. The high sensitivity for multigas sensing, low limit of detection, small footprint, and CMOS compatibility of the multigas sensor make it suitable for on-chip applications.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142925682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ultracompact low insertion loss TE-pass polarizer based on a bent hybrid plasmonic waveguide 基于弯曲混合等离子波导的超紧凑低插入损耗te通偏振器

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-01-03 DOI: 10.1007/s11082-024-08011-0

Hafiz Muhammad Obaid, Adeel Arshad, Muhammad Zafrullah

引用次数: 0

Non-Hermitian scattering characteristics in a PT-symmetric bilayer structure with parabolic gain–loss profile 具有抛物型损益分布的pt对称双层结构的非厄米散射特性

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-01-03 DOI: 10.1007/s11082-024-07999-9

Manish Kala, Pawan Singh, Akhilesh Kumar Mishra

{"title":"Non-Hermitian scattering characteristics in a PT-symmetric bilayer structure with parabolic gain–loss profile","authors":"Manish Kala, Pawan Singh, Akhilesh Kumar Mishra","doi":"10.1007/s11082-024-07999-9","DOIUrl":"10.1007/s11082-024-07999-9","url":null,"abstract":"<div>In the present work, we demonstrate scattering properties of parity-time (PT) symmetric one-dimensional bilayer structure with spatially distributed gain and loss in the dielectric layers. We report the effect of parabolic modulation of loss and gain on the non-Hermitian characteristics of the PT-symmetric system such as exceptional points (EPs), lasing points (LPs), and coherent perfect absorption (CPA) for normal and oblique illuminations for TE & TM polarizations. We observe a significant enhancement in CPA-LP, which also shows a red shift with parabolic modulation in the spatially distributed imaginary part of the dielectric permittivity for the normal incident waves. On the other hand, under oblique incidence, the spatial parabolic modulation in gain–loss tunes all the scattering properties of PT-symmetric systems such as CPA-LP and EPs. In addition, we have also investigated the effect of the introduction of a silicon layer with varying thickness between the bilayer exhibiting gain and loss on EPs and CPAs. The optical properties of the PT-symmetric structure under consideration are studied by employing the scattering and transfer matrix method and all these results are further corroborated with COMSOL® Multiphysics simulations. The proposed PT-symmetric system exhibits promising applications to achieve CPA, exotic lasing, phase modulators, and optical isolators due to the non-reciprocal behaviour of the bilayer system.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Effects of inner scale on beam wander of electromagnetic cosine-Gaussian Schell-model beams through atmospheric turbulence 内尺度对余弦-高斯-谢尔模型电磁光束在大气湍流中光束漂移的影响

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-01-03 DOI: 10.1007/s11082-024-08008-9

Hua Wu, Houxu Zhou, Congchan Li, Youquan Dan, Yonggen Xu, Zhizheng Liang

{"title":"Effects of inner scale on beam wander of electromagnetic cosine-Gaussian Schell-model beams through atmospheric turbulence","authors":"Hua Wu, Houxu Zhou, Congchan Li, Youquan Dan, Yonggen Xu, Zhizheng Liang","doi":"10.1007/s11082-024-08008-9","DOIUrl":"10.1007/s11082-024-08008-9","url":null,"abstract":"<div>Based on the extended Huygens-Fresnel principle and the Andrews beam wander theory, the beam wander properties of electromagnetic cosine-Gaussian Schell-model (ECGSM) beams propagating in atmospheric turbulence are investigated. Beam wander is considered as a large-scale turbulent eddy effect, which can theoretically be processed using a filtering function related to the beam width, but small-scale turbulent eddies play an important role in the beam spreading. To this end, the influence of inner scale on ECGSM beam wander is examined in detail both theoretically and numerically by using modified atmospheric spectrum. The simplified integral formulas of the root-mean-square (rms) beam wander and the relative beam wander for ECGSM beams in turbulence have been derived. Our results reveal that in a strong turbulence, the rms beam wander increases obviously with increasing inner scale and decreasing parameter n, and the relative beam wander can increase by 47 -104% as the inner scale increases from 1 to 20 mm. The relative beam wander is sensitive to the parameter n and has two evolution forms with propagation distance in turbulence. ECGSM beams with n not less than 5 have strong beam wander suppression ability and are significantly stronger than the corresponding electromagnetic Gaussian Schell-model (EGSM) beams. These findings may be used to effectively control the beam wander of ECGSM beams in lidar and free space optical communication.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142912949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0