{"title":"Leveraging algap/gap superlattices to elevate AlGaInP red laser diode performance","authors":"Anum, Muhammad Usman, Usman Habib, Shazma Ali","doi":"10.1007/s11082-025-08448-x","DOIUrl":null,"url":null,"abstract":"<div><p>This study presents a numerical analysis of the optical characteristics of an AlGaInP-based red laser diodes with a peak emission wavelength of 637 nm. Two AlGaInP-based red laser diodes i.e., one without and one with three pairs of AlGaP/GaP superlattices into the active region are comparatively studied. Results show a marked improvement in the output power, stimulated recombination rate, and optical gain. The optimized structure significantly enhances hole injection, leading to a substantial increase in optical gain and a reduction in the lasing threshold from 670 A/cm<sup>2</sup> to 545 A/cm<sup>2</sup>. Additionally, the slope efficiency of the AlGaP/GaP superlattices design is increased from 0.2 W/A to 0.4 W/A. The incorporation of AlGaP/GaP superlattices has been shown to significantly enhance the overall performance of AlGaInP‑based red laser diodes compared with the device without superlattices.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0000,"publicationDate":"2025-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08448-x","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This study presents a numerical analysis of the optical characteristics of an AlGaInP-based red laser diodes with a peak emission wavelength of 637 nm. Two AlGaInP-based red laser diodes i.e., one without and one with three pairs of AlGaP/GaP superlattices into the active region are comparatively studied. Results show a marked improvement in the output power, stimulated recombination rate, and optical gain. The optimized structure significantly enhances hole injection, leading to a substantial increase in optical gain and a reduction in the lasing threshold from 670 A/cm2 to 545 A/cm2. Additionally, the slope efficiency of the AlGaP/GaP superlattices design is increased from 0.2 W/A to 0.4 W/A. The incorporation of AlGaP/GaP superlattices has been shown to significantly enhance the overall performance of AlGaInP‑based red laser diodes compared with the device without superlattices.
本文对峰值发射波长为637 nm的algainp基红色激光二极管的光学特性进行了数值分析。对两种基于algainp的红色激光二极管进行了比较研究，即一种没有AlGaP/GaP超晶格，另一种有三对AlGaP/GaP超晶格。结果表明，在输出功率、受激复合率和光增益方面有了明显的提高。优化后的结构显著增强了空穴注入，导致光学增益大幅增加，激光阈值从670 a /cm2降低到545 a /cm2。此外，AlGaP/GaP超晶格设计的斜率效率从0.2 W/A提高到0.4 W/A。与没有超晶格的器件相比，AlGaP/GaP超晶格的掺入显著提高了AlGaInP基红色激光二极管的整体性能。
期刊介绍：
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
