山丘型和逆抛物型电势对球形量子点光离截面、抗磁化率和结合能的影响

IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Fulbert Gautier Nguepi, Moletlanyi Tshipa, Zibo Goabaone Keolopile
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引用次数: 0

摘要

我们从理论上研究了山状抛物和逆抛物型电约束势对球形GaAs量子点(SQDs)中心的供体杂质束缚电子态的光离截面(PCS)、抗磁化率(DMS)和结合能的影响。结果表明,逆抛物势将电子密度吸引到量子点边界,从而降低结合能,增加DMS的大小;而小山势增强基态结合能,降低激发态结合能,以状态依赖的方式调节DMS。此外,在\(1s\rightarrow 2p\)跃迁和\(2p \rightarrow 3d\)跃迁中,山状电位引起PCS共振峰的蓝移和红移,而逆电位始终引起所有跃迁的红移。两个电位的线性组合允许对电子、磁性和光学性质进行可调控制。这些发现强调了通过仔细设计限制势的几何形状来定制SQD响应的新途径,在先进的光电和量子信息设备中提供了有前途的应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effects of hill-like and inverse parabolic electric potentials on photoionization cross-section, diamagnetic susceptibility and binding energies in spherical quantum dots

We have theoretically investigated effects of hill-like parabolic and inverse parabolic electric confining potentials on the photoionization cross-section (PCS), diamagnetic susceptibility (DMS), and binding energies of donor impurity-bound electron states located at the center of spherical GaAs quantum dots (SQDs). The results reveal that the inverse parabolic potential draws electron density toward the quantum dot boundaries, thereby reducing binding energies and increasing the magnitude of the DMS, while the hill-like potential enhances ground-state binding energies, decreases excited-state binding energies, and modulates DMS in a state-dependent manner. Additionally, the hill-like potential causes blueshifts in resonance peaks of PCS for \(1s\rightarrow 2p\) transitions and redshifts for \(2p \rightarrow 3d\), whereas the inverse potential consistently causes redshifts for all transitions. A linear combination of the two potentials allows tunable control of electronic, magnetic and optical properties. These findings underscore a novel pathway for tailoring SQD responses through careful design of the geometry of confining potential, offering promising applications in advanced optoelectronic and quantum information devices.

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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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