{"title":"山丘型和逆抛物型电势对球形量子点光离截面、抗磁化率和结合能的影响","authors":"Fulbert Gautier Nguepi, Moletlanyi Tshipa, Zibo Goabaone Keolopile","doi":"10.1007/s11082-025-08441-4","DOIUrl":null,"url":null,"abstract":"<div><p>We have theoretically investigated effects of hill-like parabolic and inverse parabolic electric confining potentials on the photoionization cross-section (PCS), diamagnetic susceptibility (DMS), and binding energies of donor impurity-bound electron states located at the center of spherical GaAs quantum dots (SQDs). The results reveal that the inverse parabolic potential draws electron density toward the quantum dot boundaries, thereby reducing binding energies and increasing the magnitude of the DMS, while the hill-like potential enhances ground-state binding energies, decreases excited-state binding energies, and modulates DMS in a state-dependent manner. Additionally, the hill-like potential causes blueshifts in resonance peaks of PCS for <span>\\(1s\\rightarrow 2p\\)</span> transitions and redshifts for <span>\\(2p \\rightarrow 3d\\)</span>, whereas the inverse potential consistently causes redshifts for all transitions. A linear combination of the two potentials allows tunable control of electronic, magnetic and optical properties. These findings underscore a novel pathway for tailoring SQD responses through careful design of the geometry of confining potential, offering promising applications in advanced optoelectronic and quantum information devices.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0000,"publicationDate":"2025-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-025-08441-4.pdf","citationCount":"0","resultStr":"{\"title\":\"Effects of hill-like and inverse parabolic electric potentials on photoionization cross-section, diamagnetic susceptibility and binding energies in spherical quantum dots\",\"authors\":\"Fulbert Gautier Nguepi, Moletlanyi Tshipa, Zibo Goabaone Keolopile\",\"doi\":\"10.1007/s11082-025-08441-4\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>We have theoretically investigated effects of hill-like parabolic and inverse parabolic electric confining potentials on the photoionization cross-section (PCS), diamagnetic susceptibility (DMS), and binding energies of donor impurity-bound electron states located at the center of spherical GaAs quantum dots (SQDs). The results reveal that the inverse parabolic potential draws electron density toward the quantum dot boundaries, thereby reducing binding energies and increasing the magnitude of the DMS, while the hill-like potential enhances ground-state binding energies, decreases excited-state binding energies, and modulates DMS in a state-dependent manner. Additionally, the hill-like potential causes blueshifts in resonance peaks of PCS for <span>\\\\(1s\\\\rightarrow 2p\\\\)</span> transitions and redshifts for <span>\\\\(2p \\\\rightarrow 3d\\\\)</span>, whereas the inverse potential consistently causes redshifts for all transitions. A linear combination of the two potentials allows tunable control of electronic, magnetic and optical properties. These findings underscore a novel pathway for tailoring SQD responses through careful design of the geometry of confining potential, offering promising applications in advanced optoelectronic and quantum information devices.</p></div>\",\"PeriodicalId\":720,\"journal\":{\"name\":\"Optical and Quantum Electronics\",\"volume\":\"57 9\",\"pages\":\"\"},\"PeriodicalIF\":4.0000,\"publicationDate\":\"2025-09-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://link.springer.com/content/pdf/10.1007/s11082-025-08441-4.pdf\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical and Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11082-025-08441-4\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08441-4","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Effects of hill-like and inverse parabolic electric potentials on photoionization cross-section, diamagnetic susceptibility and binding energies in spherical quantum dots
We have theoretically investigated effects of hill-like parabolic and inverse parabolic electric confining potentials on the photoionization cross-section (PCS), diamagnetic susceptibility (DMS), and binding energies of donor impurity-bound electron states located at the center of spherical GaAs quantum dots (SQDs). The results reveal that the inverse parabolic potential draws electron density toward the quantum dot boundaries, thereby reducing binding energies and increasing the magnitude of the DMS, while the hill-like potential enhances ground-state binding energies, decreases excited-state binding energies, and modulates DMS in a state-dependent manner. Additionally, the hill-like potential causes blueshifts in resonance peaks of PCS for \(1s\rightarrow 2p\) transitions and redshifts for \(2p \rightarrow 3d\), whereas the inverse potential consistently causes redshifts for all transitions. A linear combination of the two potentials allows tunable control of electronic, magnetic and optical properties. These findings underscore a novel pathway for tailoring SQD responses through careful design of the geometry of confining potential, offering promising applications in advanced optoelectronic and quantum information devices.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.