Optical and Quantum Electronics最新文献

{"title":"Electrical and thermoelectrical conductivity of sprayed MgxCo3-xO4 thin films","authors":"L. Soussi,&nbsp;C. Louardi,&nbsp;T. Garmim,&nbsp;N. Benaissa,&nbsp;M. Bouzidi,&nbsp;O. Zahot,&nbsp;A. El,&nbsp; Bachiri,&nbsp;A. Louardi,&nbsp;Z. ElJouad,&nbsp;H. Erguig","doi":"10.1007/s11082-024-07761-1","DOIUrl":"10.1007/s11082-024-07761-1","url":null,"abstract":"<div><p>The effect of Mg substitution on the structural, morphological and electrical properties of sprayed magnesium cobalt oxide (Mg_xCo_3-xO₄) thin films (0 ≤ x ≤ 1) have been studed using X-ray diffraction (XRD), scanning electron microscopy, compositional analysis with EDS technique and four probe method for the electric conductivity measurements. XRD evaluation exhibits that Mg_xCo_3-xO₄ thin films are polycrystalline with spinel cubic structure. The EDS study confirms the presence of Mg and Co in the substituted films with the same concentrations as in the starting solution confirming the formation of Mg_xCo_3-xO₄ thin films. The effect of temperature on the dc conductivity reveals that the electrical transport mechanism in Mg_xCo_3-xO₄ thin films is based on the three-dimensional Mott’s variable-range hopping model. The density of states, the hopping distance, and the hopping energy have been successfully evaluated.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142691997","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of nanostructured Cu3SnS4 thin films through annealing of the stack of precursors for photonic applications","authors":"Zakir Hussain,&nbsp;Naresh Padha,&nbsp;Arun Banotra","doi":"10.1007/s11082-024-07709-5","DOIUrl":"10.1007/s11082-024-07709-5","url":null,"abstract":"<div><p>The stack of copper (Cu), tin (Sn), and sulfur (S) precursor layers was deposited on a Corning 2947 substrate using the thermal evaporation method under a vacuum of approximately 2 × 10^–4 Pa, employing the sequentially evaporated layer deposition (SELD) technique. The as-deposited stack was annealed at 623–723 K under a vacuum of approximately 2 × 10⁻¹ Pa to achieve the Cu₃SnS₄ phase. The stack exhibits amorphous behaviour, while films grown between 623 and 723 K attain nanostructured Cu₃SnS₄ (CTS) form. The influence of T_A on the characteristics of the Cu₃SnS₄ layers was investigated through structural, morphological, compositional, optical, and electrical analyses. The annealed CTS films crystallize in a tetragonal crystal system with the space group I42 m (121). The grown films exhibit granular structures, with particles synthesized at 673 K demonstrating increased size. The bandgap (E_g) of the films decreases from 2.13 eV to 1.78 eV, while the absorption coefficient (<i>α</i>) ranges from 1 × 10⁵ to 3 × 10⁵ cm⁻¹, as the annealing temperature (T_A) increases from 623 to 723 K. At 673 K, the low resistivity of 9.37 × 10⁻³ Ω-cm, high mobility of 56.4 cm²/V-s, and acceptor concentration of 1.19 × 10¹⁹ cm⁻³ result from the increased crystallite size, which reduces grain boundary scattering. Thus, Cu₃SnS₄ is a promising absorber layer for thin-film solar cells due to its tunable bandgap, high optical absorption, low cost, and the use of earth-abundant elements. This study successfully advances photovoltaic technology by developing an economically viable alternative material for solar cell absorber layers, paving the way for large-scale solar cell production.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142692018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Correction: Investigation on optical properties of lead-free Cs3Bi2Br9 perovskite derivative quantum dots synthesised via modified LARP method","authors":"Aswathi K. V.,&nbsp;Shanthi Subashchandran,&nbsp;Pandiyarajan Mariyappan","doi":"10.1007/s11082-024-07819-0","DOIUrl":"10.1007/s11082-024-07819-0","url":null,"abstract":"","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142691977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Tailoring the structural and optical properties of sulphur doped g-C3N4 nanostructures and maximizing their photocatalytic performance via controlling carbon content","authors":"Abdullah S. Alshammari,&nbsp;Mansour Mohamed,&nbsp;Mohamed Bouzidi,&nbsp;Fahad Abdulaziz","doi":"10.1007/s11082-024-07798-2","DOIUrl":"10.1007/s11082-024-07798-2","url":null,"abstract":"<div><p>Carbon based materials are highly promising materials for environmental applications. In the current study, sulphur doped graphite like carbon nitride (S-g-C₃N₄) samples were prepared through thermal polymerization of thiourea at different conditions. The carbon content in the prepared samples was controlled by varying the calcination temperature and calcination time and its effect on the properties of the samples was investigated. The XRD studies confirmed the formation of g-C₃N₄ while the SEM investigations were performed to monitor the morphology transformation as a function of the preparation conditions. Changing the preparation temperature was found to strongly impact the carbon content in the g-C₃N₄ nanostructures and consequently their morphological and optical properties including their band gap and photoluminescence characteristics. Additionally, varying the calcination time was found to play a role in modifying the properties of the samples but with slightly less effect than that of the calcination temperature. These parameters were utilized to enhance the photocatalytic performance for water treatment applications. The findings of the study show that engineering the composition of S doped g-C₃N₄ samples by combining the effects of various preparation conditions could be effectively utilized to enhance the properties of g-C₃N₄ and its performance in many vital applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142692019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A coupled localization method for shot photoelectric sensors based on an improved bat optimization algorithm","authors":"Menghao Lin,&nbsp;Yang Liu,&nbsp;Weiyi Chen,&nbsp;Tianle Wang,&nbsp;Jinda Lu,&nbsp;Zewei Li","doi":"10.1007/s11082-024-07772-y","DOIUrl":"10.1007/s11082-024-07772-y","url":null,"abstract":"<div><p>To realize comprehensive, accurate, and real-time positioning of target objects, and to overcome the problems of insufficient positioning accuracy and susceptibility to interference that a single sensor may face in complex environments, we propose a coupled positioning method for radio photoelectric sensors based on an improved bat optimization algorithm. After extracting the laser point cloud plane of the radio photoelectric sensor, a high-precision control field is established based on it. Based on the control points in the high-precision control field of the shooting photoelectric sensor, an equation for the plane parameters of the shooting photoelectric sensor is established. The optimization objective function of the shooting photoelectric sensor plane equation is established according to the unknown parameters of the plane equation and rotation matrix. Then, the bat optimization algorithm, which is improved by introducing a second-order oscillation link, is used to optimize and solve the optimization objective function of the shooting photoelectric sensor plane equation. The calibration results of the shooting photoelectric sensor plane parameters are obtained. The power function is used to couple and fit the calibration results of the multiple plane parameters of the shooting photoelectric sensor, and the coupling positioning result of the shooting laser sensor is obtained. The positioning accuracy is improved through multi-sensor collaboration. Experiments show that this method can effectively extract the laser point cloud plane of a radio photoelectric sensor, realize its laser plane parameter calibration, and accurately locate the target in space with a strong application effect.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142692003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A high-performance biosensor based on one-dimensional photonic crystal for the detection of cancer cells","authors":"Md. Faysal Nayan,&nbsp;Md. Arif Raihan,&nbsp;Mahamudul Hassan Fuad,&nbsp;Numayer Andalib Zaman,&nbsp;Tanvir Ahmed,&nbsp;Russel Reza Mahmud","doi":"10.1007/s11082-024-07677-w","DOIUrl":"10.1007/s11082-024-07677-w","url":null,"abstract":"<div><p>In this study, we present a novel, highly sensitive, and compact one-dimensional (1D) binary photonic crystal biosensor designed for real-time detection of malignant cells, including breast, cervical, and basal cancer cells. It utilizes a GaAs/MgF₂ multilayer photonic crystal with a central defect layer, which creates a resonant peak within the photonic band gap. Introducing different cancerous cell samples into the defect layer causes a shift in the resonant mode position, which correlates with the refractive index changes of the samples. Using the transfer matrix method (TMM), we analyzed the spectral properties of the structure. We investigated the effects of incident angle, defect thickness, and the number of periods on the transmittance of TE waves. Additionally, this article investigated the performance comparison between TE and TM modes. To achieve the highest sensitivity in our design, we have discussed the procedure for optimizing the biosensor parameters. At these optimized conditions, the biosensor achieves a sensitivity of 2564.83 nm/RIU, a quality factor of 2979.317, and a figure of merit (FOM) of 3612.175 RIU⁻¹. To highlight the novelty of our work, we have compared our results with previous research in photonic biosensing, demonstrating significant improvements in sensitivity and performance.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142691979","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Hydrostatic pressure and temperature effects on the electronic localized states in (textrm{ZnO} / textrm{Zn}_{1-textrm{x}} textrm{Mg}_{textrm{x}} textrm{O}) multi-quantum wells","authors":"Abdelkader Baidri,&nbsp;Fatima Zahra Elamri,&nbsp;Farid Falyouni,&nbsp;Driss Bria","doi":"10.1007/s11082-024-06340-8","DOIUrl":"10.1007/s11082-024-06340-8","url":null,"abstract":"<div><p>Using the interface response theory formalism, we present a theoretical study on the effect of hydrostatic pressure and temperature on the behavior of localized electronic states and eigenstates of a new MQWs consisting of two semiconductors: <span>(textrm{ZnO})</span> as a well’s material and <span>(textrm{Zn}_{1-textrm{x}} textrm{Mg}_{textrm{x}} textrm{O})</span> as a barrier material. We found that the concentration, the thickness of the defect layer, the pressure, and the temperature have a remarkable effect on the states that appear in the gaps. We observe that the increase in the hydrostatic pressure, and the thickness of the defect layer induce a shift of the states towards the lower energies. On the other hand, the increase in the temperature, and the penetration of the defect layer induce a notable shift towards the higher energies. These results give us the ability to modify and regulate the states that manifest in the inner bands by changing the parameters of the defective layer or the exposure of the system to external perturbations. These electronic states are of practical interest for the characterization of electronic properties of thin film materials and can be the basis for new electronic and optoelectronic devices. Among the most important results in our work, we find that the use of a MQWs of thickness <span>(textrm{d}_{1}=textrm{d}_{2}=40 mathrm {~A}^{circ })</span> and a percentage of <span>(25 %)</span> of Mg for the barrier material, with the introduction of a geomaterial defect in the 5th well of our system, There is the appearance of a single defect state that has a higher sensitivity than a material or geomaterial defect, such as <span>(textrm{S}=0.349, textrm{meV} / textrm{Kbar})</span> for pressure variation and <span>(textrm{S}=0.8447,textrm{meV} / ^{circ } textrm{K})</span> for temperature variation, which allows the use of this structure as an active layer of a pressure or temperature sensor.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142692012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High sensitivity of a perfect absorber based on octagonal-star and circular ring patterned graphene metasurface","authors":"Kaiqiang Cao,&nbsp;Zongnian Lu,&nbsp;Jukun Liu,&nbsp;Jiali Yao,&nbsp;Hongxiang Dai,&nbsp;Jiaqi Ju,&nbsp;Hongwei Zhao","doi":"10.1007/s11082-024-07779-5","DOIUrl":"10.1007/s11082-024-07779-5","url":null,"abstract":"<div><p>This study presents a triple-band terahertz tunable perfect absorber designed with an octagonal-star and circular ring monolayer graphene metasurface, noted for its tunability, polarization insensitivity, and high sensitivity. The graphene absorber was simulated using the finite element method and validated through impedance matching. Simulation results reveal three perfect absorption peaks at 5.5, 7.87, and 9.25 THz, with absorption rates reaching approximately 99% at 7.87 and 9.25 THz. Variations in the dielectric layer material, along with adjustments to the structural and intrinsic graphene parameters, were analyzed to optimize the efficiency of the triple-band absorption peaks. The simulations show that the structure’s high symmetry provides incident and polarization insensitivity, maintaining absorption rates above 98% over a broad range of incident and azimuth angles. The device’s sensing performance was evaluated by varying the ambient refractive index, achieving a maximum sensitivity (S) of 5.329 THz/RIU. These results indicate that this high-sensitivity sensor holds significant potential for applications in sensing, tunable spectral detection, and environmental monitoring.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142691860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Manipulation of light via high sensitivity charge sensors and a parametric amplifier in a hybrid cavity optomechanical system","authors":"Abdul Wahab,&nbsp;Muqaddar Abbas,&nbsp;Naeem Akhtar,&nbsp;Xiaosen Yang,&nbsp;Yuanping Chen","doi":"10.1007/s11082-024-07744-2","DOIUrl":"10.1007/s11082-024-07744-2","url":null,"abstract":"<div><p>In this study, we theoretically investigate the optical response characteristics of an output probe field in a hybrid double-cavity optomechanical system, which consists of a gain cavity, a charged object, along with a passive cavity that is made up of an optical parametric amplifier (OPA). There is a change from bistability to tristability when OPA and the charged parts are included. The combined impacts of OPA, gain-loss parameters, and coupling strength may be used to manipulate optical transmission rates as well as optical second-order sideband (OSS) efficiency. We further demonstrate how boosting the number of charges may significantly improve OSS efficiency. Specifically, we show that by modifying system settings, one may transition from slow to fast light or vice versa. Our findings indicate a suitable platform for improving or steering optomechanically generated transparency devices, with potential applications in optical communications, precise measurement, storage, and sensitive technology.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142692020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of individual atmospheric parameters on beam spreading of higher-order Gaussian beam","authors":"Mukesh kumar,&nbsp;Arpit Khandelwal,&nbsp;Syed Azeemuddin","doi":"10.1007/s11082-024-07866-7","DOIUrl":"10.1007/s11082-024-07866-7","url":null,"abstract":"<div><p>The beam spreading is essential for evaluating the higher-order Gaussian beam when it propagates through atmospheric turbulence. In this paper, we investigate the impact of individual atmospheric parameters such as jitter, turbulence, wind speed, and thermal blooming on beam spreading of Hermite Gaussian (HG), and Laguerre Gaussian (LG) beams. We also examine spot size variations due to beam quality on various HG and LG modes. It is seen that the impact of spreading caused by beam quality and turbulence is higher than that of jitter, wind speed, and thermal blooming. As the mode order increases, the effect of turbulence strength increases, leading to more spread for HG and LG beams. Spreading due to diffraction and beam quality on higher mode LG beam is higher than the HG beam in different modes. Beam spreading due to thermal blooming for the lower mode is higher compared to the higher mode for LG and HG beams. The sensitivity of higher mode LG beams to turbulence distortions is greater than HG beams as they experience more significant fractional increases in their spot size due to turbulence. The combined beam spread for the Laguerre Gaussian beam is larger than the Hermite Gaussian beam. This paper aims to understand better individual beam spreading in the atmosphere and its impact on the overall performance of higher-order laser propagation to develop optimized laser systems.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142692002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}