Optical and Quantum Electronics最新文献

{"title":"Dynamics of ALD-grown ZnO thin films with varying thicknesses and substrate temperatures for optoelectronic applications","authors":"Zahoor Ahmed,&nbsp;Naresh Padha,&nbsp;Bhavya Padha,&nbsp;Zakir Hussain,&nbsp;Dimple Singh","doi":"10.1007/s11082-025-08255-4","DOIUrl":"10.1007/s11082-025-08255-4","url":null,"abstract":"<div><p>This work investigates the synergy between the structural properties and the optical and electrical behaviour of ZnO layers synthesized using diethylzinc (DEZ) and ozone precursors, aiming to evaluate their potential for ultraviolet (UV) sensing and photovoltaic applications. Hexagonal wurtzite-phase zinc oxide (ZnO) thin films, belonging to the P63mc space group, were synthesized using the atomic layer deposition (ALD) technique. ZnO films with thicknesses ranging from 56 nm to 530 nm were deposited on Corning 2947 substrate at substrate temperatures of 150 °C, 200 °C, and 250 °C. X-ray diffraction (XRD) analysis showed that the (002) diffraction peak was the most intense, indicating a strong preferential orientation along the c-axis, corresponding to columnar growth perpendicular to the substrate surface. Thin films with a thickness of 530 nm, deposited at a substrate temperature of 150 °C, exhibited unit cell parameters of <i>a</i> = <i>b</i> = 3.238 Å, <i>c</i> = 5.2 Å, with a calculated unit cell volume of 47.21 ų. Their average crystallite size (D) was estimated to be 36 nm. The films exhibit high optical transparency, reaching up to 95%, and possess a wide bandgap ranging from 3.31 eV to 3.44 eV. The absorption coefficient (α) is &gt; 1 × 10⁵ cm⁻¹ in the UV region and ≤ 1 × 10⁴ cm⁻¹ in the visible region. Hall effect measurements confirmed that the ZnO thin films exhibit n-type carrier conductivity. The resistivity (ρ) ranged from (6.4–53.0) × 10^–2 Ω-cm, the carrier concentration varied from (0.32–5.73) × 10¹⁸ cm⁻³, and mobility ranged from 16.8 to 38.5 cm²/Vs, depending on the film thickness and substrate temperature. The Al/n-ZnO/Al metal–semiconductor–metal (MSM) structures exhibit enhanced photodetection performance, with photosensitivity of 234.4%, a specific detectivity of 5.27 × 10¹¹ Jones, and a responsivity of 1.338 A/W. Their measured response and recovery times are 5.27 s and 7.62 s, respectively.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 6","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and implementation of combined array antenna for point to point 5 g mm-wave communication and wireless applications","authors":"Arun Raj,&nbsp;Durbadal Mandal","doi":"10.1007/s11082-025-08248-3","DOIUrl":"10.1007/s11082-025-08248-3","url":null,"abstract":"<div><p>This study proposes a proposed combined DGS array antenna for multiband applications. Advanced quantum communication relies on large array antennas, pivotal for transmitting and receiving quantum information. This study introduces a combined array antenna for Multiband quantum 5G, with resonance frequency spanning 24–40 GHz, featuring 20 elements, combining circular central feeding. The proposed antenna has a 1.6 mm height with a roger substrate with 20 mm length and width, respectively, and the proposed antenna resonates with Multiband beam coverage with gain increased as 7.8 and 7.6 dBi at resonate frequencies of 28.82 and 35.44 GHz, respectively. The proposed antenna radiated power in a given direction with a directivity of 6.72 dB and 8.1 dB, respectively. The proposed antennae with 5G NR bands have more radiation concerning resonate frequencies in the 24–40 GHz range with Φ = 0⁰, Φ = 90⁰, and θ = 90⁰, respectively. Furthermore, its 5G NR bands application covers bandwidths of 2.75 and 2.03 GHz with good return losses of 49.38 and 60.85 dB concerning resonate frequency as 28.82 and 35.44 GHz, respectively, and cover 5 G quantum mm-wave applications and NR 5G bands as n257, n258, n260, and ground-based navigation in range of 27.85 to 34.62 GHz and 30.6 to 36.65 GHz have resonating notches as 24.39, 29, 29.7, 32.4, 36.25, and 39.07 GHz with return losses of 18.5, 26.3, 22.3, 21.6, 21.2, and 15.1 respectively and have received power measured as -50 dBm, respectively and has been implemented and validated using CST, VNA, Spectrum Analyzer, and Power Sensor with an Absorber.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 6","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quantum dot metal oxide for UV ray utilization in tandem solar cell","authors":"Abir Jana,&nbsp;Komal Kumari,&nbsp;Bhaskar Gupta,&nbsp;Subir Kumar Sarkar","doi":"10.1007/s11082-025-08241-w","DOIUrl":"10.1007/s11082-025-08241-w","url":null,"abstract":"<div><p>Quantum dot (QD) solar cells are promising for enhancing photovoltaic performance by improving light harvesting and charge carrier dynamics. This study introduces TiO₂ quantum dots (QDs) as a novel UV-absorbing top layer in tandem solar cells—selected for their wide, tunable bandgap (~ 3.7 eV), high photostability, non-toxicity, and compatibility with mesoporous TiO₂ transport layers. Unlike traditional absorbers, TiO₂ QDs target the underutilized UV spectrum, acting both as a power-generating absorber and a protective optical filter. Synthesized via a low-cost sol–gel method, the TiO₂ QDs exhibited a crystallite size of ~ 5.02 nm and strong UV absorption peaks at 360 and 378 nm. The fabricated cell achieved a PCE of 4.68%, V_oc of 0.77 V, J_sc of 7.43 mA/cm², and FF of 65.51%. Though modest in standalone efficiency, the proposed architecture demonstrates a strategic approach to enhance tandem cell performance, where even a 1–2% gain from UV harvesting can be impactful at large scale. This work uniquely positions TiO₂ QDs as a low-cost, stable, and functionally distinct material in next-generation multi-junction photovoltaics.</p><h3>Graphical abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 6","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Si@perovskite nanowire design by Si scattering to enhance perovskite optical response","authors":"Tianjun Chen,&nbsp;Guotao Wu,&nbsp;Huilong Qiao,&nbsp;Ting Gao,&nbsp;Enxiang Jiao,&nbsp;Li Ding,&nbsp;Hui Zhou,&nbsp;Zhongliang Gao","doi":"10.1007/s11082-025-08258-1","DOIUrl":"10.1007/s11082-025-08258-1","url":null,"abstract":"<div><p>Metal-halide perovskites (MHPs) materials have been prepared into heterojunction nanowires (NWs), which have recently been widely used in micro/nano scale optoelectronic devices. This work designs a core–shell structure Si@perovskite NWs improve the optical response of perovskite material. Si NWs have strong light scattering ability, with a maximum scattering efficiency factor (<i>Q</i>_sca) of 15.52 at a radius of 80 nm. The optical response efficiency factor of perovskite NWs is poor, and the maximum values of the <i>Q</i>_sca and absorption efficiency factor (<i>Q</i>_abs) at a radius of 80 nm are only 2.05 and 2.80. In Si@perovskite NWs, by using Si NWs as the core and perovskite material as the shell, the scattering of Si NWs is utilized to enhance the light absorption of perovskite materials. This result shows that the maximum <i>Q</i>_sca and <i>Q</i>_abs of perovskite NWs reached 3.86 and 6.25, respectively. In addition, under the AM 1.5G spectral irradiance, the total scattering and absorption of perovskite materials in the Si@perovskite NWs are 3.86 and 1.23 times higher than those of perovskite NWs. This provides a new design for improving the optical response of perovskite NWs.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 6","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144125707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigation of nanoscale surface roughness, fractal growth, optical constant and dispersion parameters of rf-sputtered CdS thin films for high-performance metal–semiconductor photodetector","authors":"Sakshi Pathak,&nbsp;Shristi Chaudhary,&nbsp;Monika Shrivastav,&nbsp;Jiten Yadav,&nbsp;Shivam Shukla,&nbsp;Ştefan Ţălu,&nbsp;Naveen Kumar,&nbsp;Fernando Guzman,&nbsp;Sanjeev Kumar,&nbsp;Chandra Kumar","doi":"10.1007/s11082-025-08244-7","DOIUrl":"10.1007/s11082-025-08244-7","url":null,"abstract":"<div><p>The fractal dimension is most significant parameters that provides a way to quantify the irregularities, complexity of surface and such studied that are very important in understanding its impact on performance of optical and designed photodetector device. Herein, we report the deposition of CdS thin films on FTO-coated glass substrates via RF magnetron sputtering. Field emission scanning electron microscopy (FESEM) images were used to calculate particle size. The fractal parameters were computed height-height correlation function (HHCF) algorithms. It was observed that fractal dimension values decreased with increasing deposition time, with samples at lower deposition times exhibiting the most irregular topographical surface (D_f = 2.21 ± 0.03). The optical study showed a decrease in the optical band gap from 2.38 to 2.36 eV. Moreover, the Wemple-DiDomenico (WDD) approach was used to extract dispersion energy parameters such as the oscillator energy (E₀) and dispersion energy (E_d) of the thin films. The dispersion energies ranged from 11.23 to 15.39 eV, while the oscillator energies of the deposited films ranged from 4.32 to 4.08 eV. In addition, we have explored the detailed photodetector characteristics of the designed detector device through current–voltage (I–V) measurement. Here, it was observed that the photodetector parameters such as, sensitivity, responsivity, and detectivity are influenced with film thickness. The designed photodetector device at 1 V bias exhibits the maximum responsivity of 0.79 mAW⁻¹, and a photo-detectivity of 8.4 × 10¹⁰ Jones under 532 nm illumination. The fabricated photodetector showed a good photo response, a fast time response, and high reproducibility with time.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 6","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144084865","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ab initio simulation on structural, mechanical, electronic, optical and thermodynamic properties of disilicide materials ThX2Si2 (X = Ru, Rh, Ir, Pt)","authors":"Md. Atikur Rahman,&nbsp;Rukaia Khatun,&nbsp;Mst. Asma Khatun,&nbsp;Samiron Kumar Saha,&nbsp;Md. Zahid Hasan,&nbsp;Ahmad Irfan,&nbsp;Md. Mukter Hossain,&nbsp;Aslam Hossain,&nbsp;Md. Hasan Mia,&nbsp;Sarah Chaba Mouna","doi":"10.1007/s11082-025-08199-9","DOIUrl":"10.1007/s11082-025-08199-9","url":null,"abstract":"<div><p>The present dissertation reports a comprehensive investigation of the structural, bulk, electronic, optical and thermodynamics features of Th-based intermetallics compounds ThX₂Si₂ (X = Ru, Rh, Ir, Pt). All the investigation was completed using <i>ab</i> initio scheme depend upon the density functional theory. Extremely well concurrence involving the experimental records and our calculated values of all the compounds has been observed. The dynamical and structural stability is ensured from phonon dispersion curves and formation enthalpy calculations. The investigated elastic constants show positive values and hold Born’s stability criteria which confirmed the mechanical stable nature of these materials. The large bulk and Young’s moduli of ThX₂Si₂ (X = Ru, Rh, Ir, Pt) ensured their high stiffness characteristics whereas ThIr₂Si₂ carries high stiffness characteristics. Except the phase ThIr₂Si₂, the phases ThRu₂Si_2, ThRh₂Si₂, ThPt₂Si₂ show ductility nature as ensured from Pugh's ratio and Poisson's ratio data. According to hardness calculations only the phase ThIr₂Si₂ shows hard nature whereas the phase ThRh₂Si₂ lies on the hardness border line. On the other hand, the remaining phases ThRu₂Si₂ and ThPt₂Si₂ show soft nature as they have hardness value below 10 GPa. High machinable index, <i>µ</i>_m of ThPt₂Si₂ compared to other phases ensures it high industrial application for cutting tool geometry, cutting fluids and so on. ThX₂Si₂ (X = Ru, Rh, Ir, Pt) materials exhibit metallic behavior ensured by the explanation of band structure, DOS and optical phenomena. At UV energy region, the major peak of absorption and conductivity is observed. The studied intermetallics can be good candidates for solar reflector in UV region as they possess high reflectivity in UV zone. ThRh₂Si₂ is thermally more conductive among other three compounds because of its large Debye temperature. The high melting temperature and extremely lower thermal conductivity of ThX₂Si₂ (X = Ru, Rh, Ir, Pt) ensured their potential use in Thermal Barrier Coating (TBC) materials.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 6","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144084866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Multifunctional voltage and temperature controlled metasurface using graphene and vanadium dioxide for terahertz applications","authors":"Hiranmay Mistri,&nbsp;Anumoy Ghosh,&nbsp;Abdur Rahaman Sardar,&nbsp;Pabitra Roy","doi":"10.1007/s11082-025-08246-5","DOIUrl":"10.1007/s11082-025-08246-5","url":null,"abstract":"<div><p>This paper presents a metasurface with multiple functionalities designed for terahertz (THz) frequency applications, utilizing graphene and vanadium dioxide (VO₂). The proposed metasurface is controllable through the voltage-tuning properties of graphene and the temperature-tuning properties of VO₂. The unit cell is comprised of a silicon dioxide (SiO₂) substrate and reflective ground made of gold. The top layer is composed of a diagonally connected split hexagon (DCSH) made using the combination of graphene and VO₂. In normal room temperature (298 K), i.e., at the insulating state of VO₂, the metasurface operates as a linear-to-linear cross polarization converter (LTLPC) for the frequency band 1.61 THz to 1.88 THz, i.e., 15.47% fractional bandwidth (FBW) and a linear-to-circular polarization converter (LTCPC) from 2.46 THz to 3.10 THz, i.e., 23% FBW and a triple band absorber with absorption maxima at 1.51 THz, 2.52 THz, and 3.59 THz having 100%, 99.3%, and 84.3% absorptions, respectively. In higher temperatures (above 351 K), i.e., in the metallic state of VO₂, the metasurface operates as an LTLPC for the frequency band 1.60 THz to 3.26 THz, i.e., 68.31% FBW, and a dual-band absorbers at frequency at 1.50 THz and, 3.31 THz with 100% and 99.2% absorptions. The equivalent circuit models of the metasurface are presented for insulating and metallic states. The device's performance exhibits uniformity of response up to 40° incident angle variations for the insulating state as well as for the metallic state of VO₂. It offers excellent dynamic switching capability, versatile tunability, and multimodal operations for terahertz applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 6","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144084885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Comprehensive DFT analysis of structural, optoelectronic, and thermoelectric properties of ZnGa2X4 (X = S, Se, and Te) defect chalcopyrites for energy applications","authors":"Merieme Benaadad,&nbsp;Abdelaziz Labrag,&nbsp;Mustapha Bghour,&nbsp;Hassan El-Ouaddi","doi":"10.1007/s11082-025-08252-7","DOIUrl":"10.1007/s11082-025-08252-7","url":null,"abstract":"<div><p>This study comprehensively investigates the physical properties of Zinc digallium ternary materials ZnGa₂X₄ (X = S, Se, Te) with a tetragonal defective chalcopyrite structure. We performed a first-principles calculation within the density functional theory (DFT) framework. We begin with volume optimization as well as determining the structural parameters. Then, the calculated electronic band structure reveals that all three samples are semiconductors exhibiting a direct band gap nature, with corresponding values of 3.51 eV, 2.55 eV, and 1.76 eV for ZnGa₂S₄, ZnGa₂Se₄, and ZnGa₂Te₄, respectively, as determined using the Tran-Blaha modified Becke-Johnson (TB-mBJ) potential. The optical properties were examined across energy intervals up to 14 eV, covering infrared, visible, and ultraviolet regions. Our findings show that Zinc digallium telluride (ZnGa₂Te₄) shows higher dielectric function, absorption coefficient (I ≈ 10⁶ cm⁻¹), and refractive index values, suggesting its strong potential for photovoltaic applications. The temperature analysis of the Seebeck and Hall coefficients indicates p-type charge transport in the investigated compounds. At ambient temperature, ZnGa₂Te₄ exhibited the highest Seebeck coefficient of 242.933 μV/K. The figure of merit, along with the significant power factor values and electrical conductivity of ZnGa₂X₄ materials, highlights their potential for thermoelectric applications, particularly at elevated temperatures. In summary, this study illuminates the essential physical properties of ZnGa₂X₄ (X = S, Se, Te) compounds, offering valuable insights for advancing research in optoelectronic and thermoelectric materials.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 6","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144074024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Study on planar junction infrared detectors based on InAs/GaSb type-II superlattices","authors":"Zhifang Wang,&nbsp;Yi Zhou,&nbsp;Min Huang,&nbsp;Zhicheng Xu,&nbsp;Kecai Liao,&nbsp;Zhaoming Liang,&nbsp;Cheng Sun,&nbsp;Yijie Chen,&nbsp;Jianxin Chen","doi":"10.1007/s11082-025-08231-y","DOIUrl":"10.1007/s11082-025-08231-y","url":null,"abstract":"<div><p>InAs/GaSb type-II superlattice infrared detectors, with their advantages of tunable bandgap and high material uniformity, have become a preferred material for mid-infrared imaging detectors. Conventional superlattice infrared photodetectors predominantly employ mesa architectures. In contrast, planar junction configurations offer higher fill factors at reduced pixel dimensions while mitigating etch-induced leakage currents, rendering them promising alternatives. Nevertheless, research on such structures remains scarce in the literature. This study presents Si-implanted planar junction photodetectors based on InAs/GaSb type-II superlattices, achieved through optimised device design, fabrication, and systematic characterisation. X-ray diffraction (XRD) measurements indicate that the overall crystalline quality of the material remains intact mainly following post-implantation annealing, and spectral measurements verify the mid-wavelength infrared (MWIR, 3–5 μm) photoresponse. Performance tests further showed that the dark current of the device is related to the area of the implantation window, which decreases as the implantation window area increases. Subsequently, the LBIC laser-induced detection system was used to characterise the optical response distribution of the InAs/GaSb superlattice planar junction device at 77 K and to fit the signal decay curve outside the junction region. The findings indicate that the photosensitive region expanded by 5.4 ± 0.16 μm after implantation, demonstrating the presence of lateral carrier diffusion in the superlattice material. The results of this study show the feasibility of the planar junction design of the mid-infrared focal plane array.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 6","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144074018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"High-sensitivity MXene-copper-graphene metasurface for precision salinity sensing with machine learning optimization","authors":"Jacob Wekalao,&nbsp;Mika Sillanpää,&nbsp;Saleh Al-Farraj,&nbsp;J. Aravind Kumar","doi":"10.1007/s11082-025-08249-2","DOIUrl":"10.1007/s11082-025-08249-2","url":null,"abstract":"<div><p>This study presents a metasurface-based salinity sensor integrating MXene, copper, and graphene. The sensor design features a central square resonator surrounded by circular resonators and a square ring resonator, all mounted on a graphene-coated base with SiO₂ substrate. Performance analysis demonstrates sensitivity values ranging from 270 GHzRIU⁻¹ to 286 GHzRIU⁻¹ across refractive indices of 1.3325–1.3505, with figures of merit between 5.516 and 5.831 RIU⁻¹. The sensor exhibits excellent linearity in frequency response to both refractive index (R² = 99.997%) and concentration (R² = 100%). Random Forest Regression modelling validates the sensor's performance, achieving R² values up to 95% for varying graphene chemical potentials. The design shows robust performance across different incident angles and resonator dimensions, maintaining consistent detection accuracy of 20.408 and measurement uncertainty of 0.001.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 6","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144074019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}