Optical and Quantum Electronics最新文献_第2页

Investigation of Ga and F co-doping effects on the electrical, optical, and structural properties of ZnO thin films for transparent electrode applications Ga和F共掺杂对透明电极用ZnO薄膜电学、光学和结构性能影响的研究

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-29 DOI: 10.1007/s11082-025-08227-8

Truong Huu Nguyen, Tram Ngoc Le Pham, Truc Thi Duong, Tam Bang Thi Dao, Ke Huu Nguyen, Dung Van Hoang, Anh Tuan Thanh Pham, Thang Bach Phan, Phuong Tuyet Nguyen, Vinh Cao Tran

{"title":"Investigation of Ga and F co-doping effects on the electrical, optical, and structural properties of ZnO thin films for transparent electrode applications","authors":"Truong Huu Nguyen, Tram Ngoc Le Pham, Truc Thi Duong, Tam Bang Thi Dao, Ke Huu Nguyen, Dung Van Hoang, Anh Tuan Thanh Pham, Thang Bach Phan, Phuong Tuyet Nguyen, Vinh Cao Tran","doi":"10.1007/s11082-025-08227-8","DOIUrl":"10.1007/s11082-025-08227-8","url":null,"abstract":"<div><p>Co-doping is a widely employed strategy for enhancing the electrical properties of ZnO thin films. In this study, Gallium (Ga) and Fluorine (F) were simultaneously incorporated into transparent conductive ZnO (F<sub>x</sub>Ga<sub>y</sub>_ZnO) via the DC magnetron sputtering technique. This research not only identifies the optimal co-doping ratios of F and Ga but also elucidates the critical role of Ga in providing a substantial concentration of electron carriers. Concurrently, F is shown to effectively passivate oxygen vacancies, thereby enhancing the electron mobility of pure ZnO thin films. The results indicate that an 800 nm thickness ZnO film with an optimal doping composition of 3% atomic Ga and 1% atomic F (designated as FGZO), deposited on a glass substrate at 500 °C in an Argon atmosphere, achieves remarkable metrics: a carrier concentration of 6.33 × 10²⁰ cm⁻³, electron mobility of 40.59 cm²/V.s, and a resistivity of 2.7 × 10⁻⁴ Ωcm. This doping ratio represents the most effective configuration explored in this study. Furthermore, the average transmittance in the visible and near-infrared regions exceeds 80%. The FGZO thin film exhibits considerable potential for various applications as transparent electrodes in optoelectronic devices.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143883610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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Light extraction enhancement in light emitting diode covered with ZnO-rGO quantum dots layer: experimental and simulation insight ZnO-rGO量子点层覆盖发光二极管的光提取增强：实验和模拟见解

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-28 DOI: 10.1007/s11082-025-08184-2

Shakti Prasad Mishra, Rashmita Panda, Kusha Kumar Naik

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Transforming medical diagnostics with metasurface terahertz biosensing technology: a label-free biosensor for detecting multiple diseases 用超表面太赫兹生物传感技术改变医学诊断：一种用于检测多种疾病的无标签生物传感器

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-28 DOI: 10.1007/s11082-025-08225-w

Taha Sheheryar, Ye Tian, Bo Lv, Lei Gao

{"title":"Transforming medical diagnostics with metasurface terahertz biosensing technology: a label-free biosensor for detecting multiple diseases","authors":"Taha Sheheryar, Ye Tian, Bo Lv, Lei Gao","doi":"10.1007/s11082-025-08225-w","DOIUrl":"10.1007/s11082-025-08225-w","url":null,"abstract":"<div><p>This study presents an innovative metasurface-based terahertz biosensor that enables label-free, non-invasive and cost-effective detection of a wide array of diseases including malaria and eight types of cancers. The sensor uses a triple-resonance response to detect spectral shifts caused by refractive index variations in diseased tissues and offers exceptional disease diagnostic performance. It’s simple yet innovative layered structure composed of Aluminum (Al) and Polyimide eliminates the need for complex fabrication processes and use of expensive or 2 dimensional materials which makes it a highly scalable and affordable solution in the field of advanced disease detection. With sensitivities up to 1.43 THz/RIU, a Figure of Merit of 17.54 RIU⁻¹ and a Quality Factor of 18.33, the biosensor is capable of detecting even the smallest changes in dielectric properties enabling early-stage diagnosis of infectious diseases like malaria and brain cancer. Completely polarization insensitive with wide angular stability of up to 70°, the sensor ensures reliable performance across a wide range of diverse diagnostic environments. This handy platform not only eliminates the reliance on disease-specific devices but also streamlines diagnostics which makes it ideal for resource-constrained healthcare settings. Its ease of fabrication, adaptability and ability to deliver precise, real-time and rapid results positions itself as a game-changer in personalized medicine, point-of-care diagnostics and global health initiatives while setting new standards for disease detection and management.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143879719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

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A relative humidity sensor based on V4C3 MXene-coated etched optical fiber 基于V4C3 mxene涂层蚀刻光纤的相对湿度传感器

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-26 DOI: 10.1007/s11082-025-08204-1

Janghyun Ryu, Taeho Woo, Jeehwan Kim, Jungje Jo, Namwook Joe, Suh-young Kwon, Chao-Kuei Lee, Ju Han Lee

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A novel method for silver nanoparticle deposition in microfluidic systems: backward laser transfer approach 微流体系统中银纳米颗粒沉积的新方法：反向激光转移法

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-26 DOI: 10.1007/s11082-025-08209-w

A. Ramos-Velazquez, A. Balashov, A. Bondarenko, D. Sinev, P. Filatov, D. Kononov, A. Tiushkevich, T. Vartanyan, D. Dadadzhanov, G. Romanova

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The study of two-dimensional electromagnetically induced grating in a partially closed M-type atomic model 部分封闭m型原子模型中二维电磁感应光栅的研究

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-26 DOI: 10.1007/s11082-025-08188-y

Yiming Xu, Leyu Li, Haiyun Lu, Yiming Zhang, Shenwei Li, Jia Liu, Zhiwen Xie, Aijun Li

{"title":"The study of two-dimensional electromagnetically induced grating in a partially closed M-type atomic model","authors":"Yiming Xu, Leyu Li, Haiyun Lu, Yiming Zhang, Shenwei Li, Jia Liu, Zhiwen Xie, Aijun Li","doi":"10.1007/s11082-025-08188-y","DOIUrl":"10.1007/s11082-025-08188-y","url":null,"abstract":"<div><p>In contrast to the general implementation of electromagnetic induced gratings (EIG) in atomic systems, which achieve high diffraction efficiency with specific parameters or within a small range of variation, here, we find that the EIG scheme implemented in our partially closed atomic system can not only improve the relative diffraction efficiency by changing parameters in the coupling field regulation, but also exhibits good robustness. In addition to achieving higher relative diffraction efficiency of EIG by tuning system parameters, such as coupling field Rabi frequency, probe field detuning, and relative phase, the impact on diffraction efficiency becomes very small once the Rabi frequency continues to increase after the relative diffraction efficiency reaches its maximum value in the coupling field Rabi frequency regulation. This means that to a large extent, the destruction from external conditions of the coupling field that affects the high relative diffraction efficiency can be avoided. This implies that our research has great application potential and prospects in all-optical switches, optical information processing, and beam splitting.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143875481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploring scattering in a cylindrical duct containing plasma, vacuum, and dielectric media 探索包含等离子体、真空和介电介质的圆柱形管道中的散射

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-26 DOI: 10.1007/s11082-025-08192-2

Shahana Rizvi, Muhammad Afzal

{"title":"Exploring scattering in a cylindrical duct containing plasma, vacuum, and dielectric media","authors":"Shahana Rizvi, Muhammad Afzal","doi":"10.1007/s11082-025-08192-2","DOIUrl":"10.1007/s11082-025-08192-2","url":null,"abstract":"<div><p>This study investigates the propagation of electromagnetic waves in a perfectly electric conducting cylindrical waveguide with a central chamber filled with cold plasma embedded in vacuum which is covered by dielectric layer in conducting cylinder. The mathematical modeling formulates a boundary value problem which is solved by using the mode-matching technique to analyze the scattering characteristics. This technique relies on the projection of solution on orthogonal bases. The development and application of orthogonality relations are useful to convert the differential system into linear algebraic systems, truncated and inverted for the solution. The validity of the truncated solution is confirmed by verifying the matching conditions, which demonstrate the perfect alignment of electric and magnetic fields at the two interfaces. The investigation focuses on the power flux in different regions of the waveguide, considering both transparency and non-transparency regimes. Computational results demonstrate energy propagation versus the properties of the medium and geometrical parameters of configuration. It is found that the plasma radius alterations do not significantly affect transmission, but influence the number of cut-on modes. In the transparency regime, one cut-on mode, consistently, exists across all chamber regions. In the non-transparency regime, the plasma region has no cut-on mode while the vacuum and dielectric regions exhibit one cut-on mode.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143875480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Zinc doping-induced modulation of optical and nonlinear optical properties in MgO thin films deposited by dip coating 锌掺杂对浸镀MgO薄膜光学和非线性光学特性的调制

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-24 DOI: 10.1007/s11082-025-08187-z

S. Abed, K. Waszkowska, H. Djaaboube, A. Bouabellou, S. Taboukhat, B. Sahraoui, K. Bouchouit

{"title":"Zinc doping-induced modulation of optical and nonlinear optical properties in MgO thin films deposited by dip coating","authors":"S. Abed, K. Waszkowska, H. Djaaboube, A. Bouabellou, S. Taboukhat, B. Sahraoui, K. Bouchouit","doi":"10.1007/s11082-025-08187-z","DOIUrl":"10.1007/s11082-025-08187-z","url":null,"abstract":"<div><p>In this study, transparent dielectric magnesium oxide (MgO) thin films doped with varying concentrations of zinc (Zn) (0, 3, 5, and 7 at %) are successfully deposited on glass substrates using sol–gel dip coating technique. Magnesium acetate and zinc acetate serve as precursors, and the films were annealed at 500 °C for 6 h. The effect of Zn doping on the optical, morphological, and nonlinear optical (NLO) properties of the films is systematically investigated. Optical transmittance measurements reveal high transparency (> 80%) in the visible region, with transmittance decreasing as Zn concentration increases. The optical bandgap ranges from 3.94 to 4.04 eV, following a nonlinear trend due to Zn-induced lattice modifications. Surface morphology analysis shows uniform, homogeneous, and dense films, with increasing grain size and surface roughness at higher Zn doping levels. Third harmonic generation (THG) measurements using a Nd:YAG laser (1064 nm) demonstrate high-quality films with enhanced NLO properties. The third-order NLO susceptibility (χ<sup>(3)</sup>) is highest for undoped MgO (48.98 · 10<sup>−22</sup> m<sup>2</sup> V<sup>−2</sup>), while Zn doping results in an initial reduction followed by improvement at higher concentrations. These findings highlight the potential of Zn-doped MgO thin films for optical and NLO applications.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143865451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Tunable wide band near-perfect absorber for terahertz waves based on a vanadium dioxide metasurface 基于二氧化钒超表面的可调谐宽带近乎完美的太赫兹波吸收器

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-20 DOI: 10.1007/s11082-025-08186-0

Tara Afra, Walter Fuscaldo, Dimitrios C. Zografopoulos, Teresa Natale, Francesco Dell’Olio

{"title":"Tunable wide band near-perfect absorber for terahertz waves based on a vanadium dioxide metasurface","authors":"Tara Afra, Walter Fuscaldo, Dimitrios C. Zografopoulos, Teresa Natale, Francesco Dell’Olio","doi":"10.1007/s11082-025-08186-0","DOIUrl":"10.1007/s11082-025-08186-0","url":null,"abstract":"<div><p>Vanadium dioxide (VO<sub>2</sub>) is a remarkable phase-change material whose temperature-driven insulator-to-metal transition unlocks powerful tunability in the THz regime. Here, we present a VO<sub>2</sub>-based metasurface that not only achieves over 90% absorption efficiency across a broad 1.27–2.64 THz range when in its metallic phase, but also transitions into a nearly perfect reflector (0.1–4 THz) in its dielectric phase. This striking dual functionality leverages the unique conductivity variation of VO<sub>2</sub> with temperature and is realized through a metasurface on a thin SiO<sub>2</sub> spacer backed by a gold layer. Notably, our design maintains insensitivity to both polarizations and incidence angle—crucial characteristics for practical THz applications—while offering a robust, wideband response. Through systematic analysis, we elucidate the physical mechanisms governing the high absorption and reflection, and demonstrate how key geometric parameters influence the device performance. By combining wideband tunability, angular and polarization invariance, and design simplicity, this metasurface holds substantial promise as a versatile component for next-generation THz technologies.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-025-08186-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143852560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

First-principles study of co-doped wurtzite ZnO: insights into carrier dynamics, visible light absorption, and structural properties for solar cell applications 共掺杂晶格氧化锌的第一性原理研究：洞察太阳能电池应用中的载流子动力学、可见光吸收和结构特性

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-04-20 DOI: 10.1007/s11082-025-08172-6

M. Archi, L. Moulaoui, M. Karouchi, E. Darkaoui, A. Laassouli, O. Bajjou, K. Rahmani, B. Manaut, B. Elhadadi

{"title":"First-principles study of co-doped wurtzite ZnO: insights into carrier dynamics, visible light absorption, and structural properties for solar cell applications","authors":"M. Archi, L. Moulaoui, M. Karouchi, E. Darkaoui, A. Laassouli, O. Bajjou, K. Rahmani, B. Manaut, B. Elhadadi","doi":"10.1007/s11082-025-08172-6","DOIUrl":"10.1007/s11082-025-08172-6","url":null,"abstract":"<div><p>This study investigates the effect of Ga, In, and (Ga, In) doping at 6.125% concentration on the structural, electronic, carrier lifetime, and optical properties of ZnO using density functional theory (DFT). The GGA + U (Generalized Gradient Approximation with On-Site Coulomb Interaction U) approach was employed to correct band gap underestimation, revealing a decrease in band gap from 3.38 eV (pure ZnO) to 3.24 eV (Zn<sub>14</sub>Ga<sub>2</sub>O<sub>16</sub>), 2.93 eV (Zn<sub>14</sub>In<sub>2</sub>O<sub>16</sub>), and 3.07 eV (Zn<sub>14</sub>GaInO<sub>16</sub>). Formation energy analysis confirmed the thermodynamic stability of the doped structures, while the Fermi level shift into the conduction band indicated n-type behavior. Partial density of states (PDOS) analysis showed significant contributions from Ga-s, In-s, Zn- (p, s), and O-s orbitals, modifying the electronic structure. Effective mass calculations revealed a reduced <span>({m}_{e}^{*}/{m}_{h}^{*})</span> ratio, enhancing carrier lifetime by minimizing recombination. Optical studies demonstrated an increased probability of electron transitions at lower energies and improved visible-light absorption, particularly after (Ga, In) co-doping. These results suggest Zn<sub>14</sub>GaInO<sub>16</sub> as a promising candidate for use in solar cell and optoelectronic devices.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143852563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0