Optical and Quantum Electronics最新文献_第2页

Theoretical investigation of hole transport and donor materials derived from anthracene with improved optoelectronic characteristics for perovskite and organic solar cell applications 钙钛矿和有机太阳能电池中改进光电特性的空穴输运和蒽基供体材料的理论研究

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-08-30 DOI: 10.1007/s11082-025-08429-0

Sidra Manzoor, Faheem Abbas, Ruba Munir, Nimra Manzoor, Gadah Albasher, Muhammad Ishaq, Muhammad Waqas, Saima Noreen

{"title":"Theoretical investigation of hole transport and donor materials derived from anthracene with improved optoelectronic characteristics for perovskite and organic solar cell applications","authors":"Sidra Manzoor, Faheem Abbas, Ruba Munir, Nimra Manzoor, Gadah Albasher, Muhammad Ishaq, Muhammad Waqas, Saima Noreen","doi":"10.1007/s11082-025-08429-0","DOIUrl":"10.1007/s11082-025-08429-0","url":null,"abstract":"<div><p>This study advances the field of emerging photovoltaics by exploring creative engineering specifically designed for perovskite (PSC) and organic solar cells (OSCs). This work presents the theoretical design of eight anthracene-based derivatives <b>(A3D1–A3D8)</b> using a push-pull molecular engineering approach, in which various electron-accepting groups are introduced via thiophene π-bridges onto a planar anthracene core functionalized with triphenylamine side units. These derivatives are systematically evaluated to identify their suitability as either hole-transport materials for PSCs or donor materials for OSCs. The tailored derivatives exhibit moderate to narrow optical bandgaps (1.12–2.14 eV) and strong visible-light absorption, enabling complementary light harvesting that may support enhanced photocurrent generation when integrated with perovskite absorber layers. <b>A3D5</b> stands out as a transport material, featuring a wide bandgap of 2.14 eV, a deep HOMO level (-5.30 eV), and a considerable theoretically predicted hole transport integral (t<sub>h</sub> = 0.1522 eV), making it well-suited for efficient PSC applications. Among the designed derivatives, <b>A3D3</b> exhibits a narrow bandgap (1.12 eV), strong absorption in the near-infrared region (λ<sub>max</sub> = 805 nm), a high dipole moment of 20.428 D in toluene, and the highest amount of charge transfer (ΔN<sub>max</sub> <b>=</b> 3.568e), making it a promising donor material for OSCs. These properties contribute to enhanced photocurrent generation and a simulated power conversion efficiency of up to 20.64%, outperforming the reference material Spiro-OMeTAD. Overall, this research expands our knowledge of push-pull engineering for these tunable anthracene-based derivatives, offering a plethora of opportunities for effective use in perovskite and organic photovoltaics.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144920501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Ce-doped zinc sulfide (ZnS): a pathway to bandgap control, ferromagnetic behavior, and optoelectronic innovation ce掺杂硫化锌（ZnS）：带隙控制、铁磁行为和光电子创新的途径

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-08-30 DOI: 10.1007/s11082-025-08428-1

A. Mekri, K. Bidai, T. Seddik, M. Batouche, Zheng Chang, Sajal Biswas, A. Belfedal

{"title":"Ce-doped zinc sulfide (ZnS): a pathway to bandgap control, ferromagnetic behavior, and optoelectronic innovation","authors":"A. Mekri, K. Bidai, T. Seddik, M. Batouche, Zheng Chang, Sajal Biswas, A. Belfedal","doi":"10.1007/s11082-025-08428-1","DOIUrl":"10.1007/s11082-025-08428-1","url":null,"abstract":"<div><p>Herein, using DFT + U calculations, this study investigates the structural, optical, and magnetic properties of Ce-doped ZnS, with a focus on bandgap engineering and the induction of ferromagnetic states. Our theoretical analysis indicates that Ce doping substantially alters the electronic structure of ZnS, reducing its bandgap from 3.37 eV in the pure material to 2.8 eV at a 12% doping level. This bandgap reduction is attributed to the formation of localized Ce‑4<i>f</i> states within the gap, which enable sub-bandgap optical transitions, as demonstrated by increased absorption in both the infrared and visible spectra. Additionally, the incorporation of Ce<sup>3+</sup> ions introduces ferromagnetic states due to the partially filled 4f-orbitals, breaking time-reversal symmetry and enabling spin-dependent functionality. By precisely controlling Ce doping, the optical and magnetic properties of ZnS can be finely tuned, making it a promising material for advanced applications such as light-emitting diodes, phosphors, infrared detectors, and spintronic devices. This study offers a comprehensive examination of the effects of Ce doping in ZnS and underscores its potential in next-generation optoelectronic and spintronic technologies.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144920502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Studies of the defect structure of the active-nonlinear gradient (LiNbO_3:Er^{3+}:Yb^{3+}) crystal by UV and IR absorption spectra 有源非线性梯度(LiNbO_3:Er^{3+}:Yb^{3+})晶体缺陷结构的紫外和红外吸收光谱研究

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-08-26 DOI: 10.1007/s11082-025-08392-w

N. V. Sidorov, A. Yu. Pyatyshev, E. V. Stroganova, V. V. Galutskiy, O. A. Klimenko, A. V. Skrabatun

{"title":"Studies of the defect structure of the active-nonlinear gradient (LiNbO_3:Er^{3+}:Yb^{3+}) crystal by UV and IR absorption spectra","authors":"N. V. Sidorov, A. Yu. Pyatyshev, E. V. Stroganova, V. V. Galutskiy, O. A. Klimenko, A. V. Skrabatun","doi":"10.1007/s11082-025-08392-w","DOIUrl":"10.1007/s11082-025-08392-w","url":null,"abstract":"<div><p>A nearly linear decrease in the spectral vision of the UV absorption edge of the gradient <span>(LiNbO_3:Er^{3+}:Yb^{3+})</span> crystal along the ferroelectric axis was detected. The second-order IR absorption spectra of the gradient <span>(LiNbO_3:Er^{3+}:Yb^{3+})</span> crystal in the wavenumber range of 2000–3000 cm<sup>−1</sup> have been recorded for the first time. The appearance of absorption lines in the specified spectral range is typical of defective and highly anharmonic crystals. Based on the IR absorption spectra in the region of stretching vibrations of the <span>(OH^-)</span>-groups, it has been found that the oxygen-octahedral clusters <span>(MeO_6)</span> (Me–<span>(Li^+)</span>, <span>(Nb^{5+})</span>, vacant octahedron V, impurity ions <span>(Er^{3+})</span> and <span>(Yb^{3+})</span>) of the structure of the gradient <span>(LiNbO_3:Er^{3+}:Yb^{3+})</span> crystal are practically not distorted. It has been shown that the volume concentration of <span>(OH^-)</span>-groups in the gradient <span>(LiNbO_3:Er^{3+}:Yb^{3+})</span> crystal is several times less than in compositionally uniform congruent and stoichiometric lithium niobate crystals. The obtained results are significant for the complex analysis of the nonlinear materials.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144897129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

PAPR reduction for enhanced performance in coherent-detection based underwater wireless communication-system employing Hadamard-transform combined with clipping and square-rooting technique 基于相干探测的水下无线通信系统中，利用hadamard变换结合裁剪和平方根技术降低PAPR以提高性能

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-08-26 DOI: 10.1007/s11082-025-08423-6

Amlan Das, Nilanjana Sarkar, Barnali Pal, Rahul Mukherjee, Manish Dev Sharma, Ardhendu Sekhar Patra

{"title":"PAPR reduction for enhanced performance in coherent-detection based underwater wireless communication-system employing Hadamard-transform combined with clipping and square-rooting technique","authors":"Amlan Das, Nilanjana Sarkar, Barnali Pal, Rahul Mukherjee, Manish Dev Sharma, Ardhendu Sekhar Patra","doi":"10.1007/s11082-025-08423-6","DOIUrl":"10.1007/s11082-025-08423-6","url":null,"abstract":"<div><p>Underwater optical wireless communication (UOWC) systems represent a significant advancement in marine communication technologies, offering high data rates and enhanced bandwidth compared to traditional acoustic methods. However, in coherent-detection orthogonal-frequency-division-multiplexing (OFDM) UOWC system one of the key challenges is the high peak-to-average power ratio (PAPR) of the transmitted optical signals. Using coherent-detection OFDM technology, a UOWC-system has been established employing 450 nm blue laser-diode (LD). A hybrid method, Hadamard-transform combined with clipping and square-rooting technique is proposed to diminish the effect of high PAPR. 18 Gbps data-rate have been transmitted over 31.5 m, 29 m, and 27 m distances for 32, 64 and 128 QAM signals and very good Q-values have been obtained utilizing our proposed-system. Employing this technique PAPR-values are decreased by 6.4 dB for 32-QAM, 6.2 dB for 64-QAM and 5.9 dB for 128-QAM than original OFDM-signals. The percentages of improvements are 48.4%, 45.5% and 42.4% respectively for 32, 64 and 128-QAM compared to OFDM-signal. The potential of this technique for mitigating the effects of high PAPR in UOWC systems is analyzed and shows a significant improvement of PAPR values compared to original OFDM-signal. So, our proposed system for PAPR reduction can significantly improve the system’s energy efficiency, extend the communication-range and minimizes error-rates. This system is suitable for PAPR reduction with a focus on real-time implementation of UOWC-system.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144897126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Bullet solutions of stochastically perturbed nonlinear Schrödinger equation in optical metamaterials 光学超材料中随机摄动非线性Schrödinger方程的子弹解

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-08-22 DOI: 10.1007/s11082-025-08412-9

Nauman Raza, Muhammad Shahbaz, Younes Chahlaoui, Mustafa Bayram, Ahmet Bekir

{"title":"Bullet solutions of stochastically perturbed nonlinear Schrödinger equation in optical metamaterials","authors":"Nauman Raza, Muhammad Shahbaz, Younes Chahlaoui, Mustafa Bayram, Ahmet Bekir","doi":"10.1007/s11082-025-08412-9","DOIUrl":"10.1007/s11082-025-08412-9","url":null,"abstract":"<div><p>This research examines the derivation of accurate optical bullet solutions for the stochastically perturbed nonlinear Schrödinger equation, which characterizes the propagation of optical bullets in interconnected metamaterial fibers. This model exhibits considerable significance due to its implications within the domain of contemporary optical communication technologies and the dynamics of nonlinear waves in the presence of stochastic perturbations. To address the issue, we utilize three advanced analytical methodologies: the extended simple equation method, the Csch method, and the Tanh method. These methodologies facilitate the systematic and unified development of various exact traveling wave solutions, encompassing periodic, solitary, and singular waveforms. The investigation highlights the emergence of diverse bullet-like patterns shaped by stochastic disturbances, effectively illustrates the interaction between nonlinearity and randomness in complex physical systems. The findings pave the way for further investigation into stability analysis, stochastic wave structure control, and potential applications in optical communication and photonic technology.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144888052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Plasmons carrying orbital angular momentum in a partially degenerate plasma 在部分简并的等离子体中携带轨道角动量的等离子体

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-08-21 DOI: 10.1007/s11082-025-08406-7

Sheraz Khan, S. Neelam Naeem, Imtiaz Hussain, Ata-ur-Rahman, Jamelah S. Al-Otaibi, A. M. Bakry, Samir A. El-Tantawy

{"title":"Plasmons carrying orbital angular momentum in a partially degenerate plasma","authors":"Sheraz Khan, S. Neelam Naeem, Imtiaz Hussain,  Ata-ur-Rahman, Jamelah S. Al-Otaibi, A. M. Bakry, Samir A. El-Tantawy","doi":"10.1007/s11082-025-08406-7","DOIUrl":"10.1007/s11082-025-08406-7","url":null,"abstract":"<div><p>This paper examines how quantum electron plasma waves (EPWs) can carry orbital angular momentum (OAM) when a Laguerre-Gaussian (LG) laser beam interacts with a specialized type of plasma. This plasma consists of inertial electrons (neither fully classical nor fully degenerate but instead existing in an intermediate degenerate state) and non-degenerate stationary ions. Such a state reflects the realistic conditions of laboratory plasmas, particularly those found in inertial confinement fusion (ICF) experiments. Unlike the idealized extreme of very high and very low temperatures, this intermediate regime is both physically meaningful and experimentally achievable, making it especially relevant for practical applications. By applying the quantum hydrodynamic model and working within the paraxial approximation, we derive a dispersion relation that governs how these OAM-carrying plasmons behave. Our analysis reveals that electric field lines form a helical pattern, characterized by a strong central (axial) component, which is a key signature of angular momentum transfer. We also examine how the structure of the laser beam, particularly its radial and angular mode numbers, affects electrostatic potential and field distribution within the plasma. These findings deepen our understanding of light-plasma interaction in quantum regimes and point towards new ways to manipulate and study plasmas in a real-world experimental setup.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144880819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

An investigation on the visible photodetection properties of CuO-based thin films synthesized by the chemical bath deposition (CBD) method; the influence of deposition time and the annealing process 化学浴沉积法制备cuo基薄膜的可见光探测性能研究沉积时间和退火工艺的影响

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-08-21 DOI: 10.1007/s11082-025-08405-8

Sophia Naghdi-Jirkol, Hosein Eshghi

{"title":"An investigation on the visible photodetection properties of CuO-based thin films synthesized by the chemical bath deposition (CBD) method; the influence of deposition time and the annealing process","authors":"Sophia Naghdi-Jirkol, Hosein Eshghi","doi":"10.1007/s11082-025-08405-8","DOIUrl":"10.1007/s11082-025-08405-8","url":null,"abstract":"<div>\u0000 \u0000 <p>To investigate the photodetection properties of CuO-based thin films at a wavelength of 456 nm, we synthesized the as-grown layers on glass substrates via the chemical bath deposition (CBD) method for durations of 10, 15, and 20 min, subsequently annealed at 300 °C in an Ar atmosphere for 1 h, and ultimately configured in metal-semiconductor-metal (MSM) structures. We examined the layers using various techniques, including field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), ultraviolet-visible-near infrared (UV-Vis-NIR) spectroscopy, the Seebeck effect, and current-voltage (I-V) and current-time (I-t) measurements under both dark and illuminated conditions. Our findings indicate: (1) the as-grown samples exhibited a singular monoclinic CuO phase, while annealing introduced a secondary cubic Cu<sub>2</sub>O phase; (2) the optical spectra reveal that all layers demonstrate high absorption in the visible spectrum; (3) analysis of the Seebeck effect confirms that all layers possess p-type conductivity; (4) dark I-V measurements show that the annealed layers exhibit an ohmic characteristic with electrical resistance ranging from 1.6 to 16 MΩ; and under light illumination, I-t measurements indicate that the annealed sample with the longest growth duration displays the highest photosensitivity (28%) and recovery percentage (88%).</p>\u0000 </div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144880820","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Numerical simulation and buffer layer optimization for Cd-free Cu(In, Ga)Se2 solar cells using SCAPS-1D 基于SCAPS-1D的无cd Cu(In, Ga)Se2太阳能电池的数值模拟与缓冲层优化

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-08-20 DOI: 10.1007/s11082-025-08418-3

Keshun Nie, Yiran Liang, Xin Chen, Yunxiang Zhang, Jian Wang, Chenliang Zhou, Zhongjie Wang, Diab Khalafallah, Wei Liu, Qinfang Zhang

{"title":"Numerical simulation and buffer layer optimization for Cd-free Cu(In, Ga)Se2 solar cells using SCAPS-1D","authors":"Keshun Nie, Yiran Liang, Xin Chen, Yunxiang Zhang, Jian Wang, Chenliang Zhou, Zhongjie Wang, Diab Khalafallah, Wei Liu, Qinfang Zhang","doi":"10.1007/s11082-025-08418-3","DOIUrl":"10.1007/s11082-025-08418-3","url":null,"abstract":"<div><p>Copper indium gallium selenium (Cu(In, Ga)Se<sub>2</sub>, CIGS) thin-film solar cells have garnered significant attention as a promising solution to address the global energy crisis. However, the conventional cadmium sulfide (CdS) buffer layer presents inherent limitations, including optical absorption losses in the short-wavelength spectrum and environmental toxicity concerns. This study systematically evaluates three eco-friendly wide-bandgap alternatives, such as gallium selenide (Ga<sub>2</sub>Se<sub>3</sub>), zinc magnesium oxide (Zn<sub>0.8</sub>Mg<sub>0.2</sub>O), and zinc oxysulfide (Zn(O, S)), through comprehensive numerical simulations using SCAPS-1D. Initial comparative analysis reveals that Zn<sub>0.8</sub>Mg<sub>0.2</sub>O and Zn(O, S) demonstrate superior interfacial properties, particularly through their favorable conduction band alignment that effectively minimizes carrier recombination barriers at the buffer/absorber interface. Extended parametric studies on buffer layer thickness, operating temperature, doping concentration, sulfur composition in Zn(O, S), and the gallium ratio (Ga/(Ga + In)) in CIGS further establish Zn(O, S) as the most promising candidate. Optimized devices with Zn(O, S) buffers achieve enhanced carrier collection efficiency owing to their optimal band alignment and reduced interface defect states. This computational investigation provides critical insights for developing high-performance, cadmium-free CIGS photovoltaic devices through buffer layer engineering.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868913","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Dual-functional terahertz metasurface with broadband reflective linear to cross polarization conversion and embedded biosensing 双功能太赫兹超表面与宽带反射线性交叉极化转换和嵌入式生物传感

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-08-20 DOI: 10.1007/s11082-025-08399-3

Taha Sheheryar, Bo Lv, Lei Gao

{"title":"Dual-functional terahertz metasurface with broadband reflective linear to cross polarization conversion and embedded biosensing","authors":"Taha Sheheryar, Bo Lv, Lei Gao","doi":"10.1007/s11082-025-08399-3","DOIUrl":"10.1007/s11082-025-08399-3","url":null,"abstract":"<div><p>Achieving broadband polarization conversion and high-sensitivity biosensing within a single device remains a major challenge. Most existing designs prioritize one functionality, rely on expensive materials and usually suffer from limited angular stability which restricts their scalability and practical applicability. This study presents a terahertz metasurface design that achieves the rare integration of ultra-wideband polarization conversion and highly responsive biosensing functionality. The proposed device attains a polarization conversion ratio (PCR) exceeding 90% over a broad span of 3.825–8.025 THz, a wide bandwidth of 4.20 THz, a maximum polarization conversion ratio of 99.99%, an average polarization conversion ratio of 97.26% and a full width at half maximum of 5.252 THz. It maintains strong angular stability and preserves its performance at incidence angles up to 30°. As a biosensor, the proposed design shows consistent refractive index sensitivity reaching a peak of 2.62 THz/RIU and effectively distinguishes between healthy and cancerous biological samples including Jurkat cells (leukemia) and basal cell carcinoma tissue (skin cancer). This work represents a noble advancement over existing designs by uniting an ultra-wideband operating frequency range, superior average polarization conversion and highly sensitive biosensing within a single cost-effective device.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Performance evaluation of power allocation and diversity combining techniques for NOMA-MIMO-VLC systems with multi-user pairing algorithms 基于多用户配对算法的NOMA-MIMO-VLC系统功率分配与分集组合技术性能评价

IF 4 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-08-20 DOI: 10.1007/s11082-025-08395-7

Hesham S. Ibrahim, Mohamed Abaza, Ali Mansour, Ayman Alfalou

{"title":"Performance evaluation of power allocation and diversity combining techniques for NOMA-MIMO-VLC systems with multi-user pairing algorithms","authors":"Hesham S. Ibrahim, Mohamed Abaza, Ali Mansour, Ayman Alfalou","doi":"10.1007/s11082-025-08395-7","DOIUrl":"10.1007/s11082-025-08395-7","url":null,"abstract":"<div><p>This paper investigates the performance of a multiple-input multiple-output (MIMO)- non-orthogonal multiple access (NOMA)-based visible light communication (VLC) system. It explores various power allocation methods along with user-pairing algorithms aimed at enhancing system performance. A comparative evaluation is performed on fixed power allocation, gain ratio power allocation, and normalized gain difference power allocation, in conjunction with simple multi-user pairing techniques such as, the next-largest difference user-pairing algorithm and the uniform channel gain difference (UCGD) algorithm. Additionally, the study incorporates diversity combining techniques such as: selection combining, equal gain combining, and maximum ratio combining to exploit the benefits of receiver diversity. The performance of the system is assessed through the bit error rate (BER) for both even and odd user configurations in a <span>(2 times 2)</span> NOMA-MIMO-VLC setup utilizing on-off keying modulation. Monte-Carlo simulation results validate an analytical BER, considering both perfect and imperfect successive interference cancellation under the assumption of perfect channel state information. Furthermore, the results indicate that user pairing significantly enhances the BER performance in three-user scenarios compared to the scenario without pairing, while UCGD demonstrates the best BER performance in four-user scenarios.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144868742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0