Optical and Quantum Electronics最新文献_第3页

On thermoplasmonic properties of star-shaped gold dimer nanoframes 星形金二聚体纳米框架的热等离子体性质

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-05-17 DOI: 10.1007/s11082-025-08240-x

A. Azarian, S. Zamani

{"title":"On thermoplasmonic properties of star-shaped gold dimer nanoframes","authors":"A. Azarian, S. Zamani","doi":"10.1007/s11082-025-08240-x","DOIUrl":"10.1007/s11082-025-08240-x","url":null,"abstract":"<div><p>Star-shaped Gold Dimer Nanoframes (SGDNs) with five branches have demonstrated exceptional thermoplasmonic potential for cancer photothermal therapy, leveraging their unique plasmonic properties. This study focuses on the critical role of nanoframe width in modulating local electric fields and enhancing surface temperatures. The results indicate that increasing the width of SGDNs induces a blue shift in the first plasmon mode and decreases the absorption peak intensity. In contrast, the second mode shows an increase in electric field enhancement with width. Maximum hotspots (E/E<sub>0</sub>)<sub>max</sub> = 250 were observed in the central gap for the second mode, with associated temperature increases reaching ΔT<sub>max</sub> ≈ 30 °C in skin-like environments, significantly higher than the first mode (ΔT<sub>max</sub> = 12 °C). These temperature enhancements, particularly localized at inter-arm gaps, underline SGDNs' effectiveness in targeted thermal applications, selectively destroying tumor cells while preserving surrounding healthy tissues. The study provides clear evidence supporting SGDNs as highly efficient nanostructures for photothermal cancer treatment in VIS and NIR regions.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 6","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144074017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Guided mode in LiF filled slab waveguide bounded by uniform plasma 以均匀等离子体为界的LiF填充平板波导的导模

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-05-16 DOI: 10.1007/s11082-025-08251-8

Tayyaba Zia, Liu Bangfan, Zainab Falah Khudhair, Mohamed Shaban, Sameerah I. Al-Saeedi, M. Chethan, S. K. Sunori, Satish Choudhury, Ishant Arora, Sultonmakhmud Polvonov, Bekzod Madaminov, M. Iftikhar

引用次数: 0

Enhancing efficiency of CIGS solar cell using BSF layer integration technology through numerical simulation 通过数值模拟，利用BSF层集成技术提高CIGS太阳能电池效率

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-05-15 DOI: 10.1007/s11082-025-08233-w

Alok Kumar, Sushama M. Giripunje

{"title":"Enhancing efficiency of CIGS solar cell using BSF layer integration technology through numerical simulation","authors":"Alok Kumar, Sushama M. Giripunje","doi":"10.1007/s11082-025-08233-w","DOIUrl":"10.1007/s11082-025-08233-w","url":null,"abstract":"<div><p>This new study explores cesium tin iodide (CsSnI<sub>3</sub>) as a lead-free perovskite BSF layer in CIGS solar cells, utilizing its ideal band alignment and high conductivity to improve charge carrier extraction and diminish recombination losses, ultimately improving photovoltaic performance. The proposed novel device structure (Ni/CsSnI<sub>3</sub>/CIGS/ZnS:In/ZnO/Al) has been examined utilizing the SCAPS-1D simulation tool. The solar cell's performance, in the presence and absence of Back surface field (BSF) layer is assessed by adjusting several factors for optimizing the device performance. Under the AM 1.5 G spectrum, and considering series resistance of 0.5 Ω-cm<sup>2</sup> and shunt resistance of 10<sup>7</sup> Ω-cm<sup>2</sup> to maintain the realistic condition for simulation of the device structure. Aluminium and nickel are taken as front and rear contact electrode material with work functions of 4.2 eV and 5.15 eV respectively. The newly suggested passivated solar cell designs give an efficiency of 27.66%, with V<sub>OC</sub> of 0.78 V, J<sub>SC</sub> of 43.02 mA cm<sup>−2</sup>, and FF of 81.80%. The designed solar cell integrated with perovskite BSF layer cesium tin iodide (CsSnI<sub>3</sub>) performs better than the traditional CIGS solar cell design and opens up new avenues for cutting-edge solar cell research. The authors calibrated CIGS solar cells with experimental data before designing and simulating a new structure to ensure accurate simulation results. This research offers valuable insights for manufacturers aiming to produce cost-effective CIGS solar cells. Furthermore, the proposed device structure demonstrates strong potential for future advancements in tandem solar cell applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Design oligoporous-core based multimode fiber for mode division multiplexing applications 设计基于低孔芯的多模光纤用于模分复用应用

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-05-15 DOI: 10.1007/s11082-025-08198-w

Sumaiya Akhtar Mitu, Lway Faisal Abdulrazak, Sobhy M. Ibrahim, Shaymaa R. Tahhan, Md Bellal Hossain, Kawsar Ahmed, Francis M. Bui, Li Chen

{"title":"Design oligoporous-core based multimode fiber for mode division multiplexing applications","authors":"Sumaiya Akhtar Mitu, Lway Faisal Abdulrazak, Sobhy M. Ibrahim, Shaymaa R. Tahhan, Md Bellal Hossain, Kawsar Ahmed, Francis M. Bui, Li Chen","doi":"10.1007/s11082-025-08198-w","DOIUrl":"10.1007/s11082-025-08198-w","url":null,"abstract":"<div><p>A polarization-maintaining oligoporous-core-based multi-mode fiber is proposed. By tuning the air hole, as well as the core number, shape, size, and position up to 28 distinct linearly polarized (LP) modes are obtained. The Finite Element Method (FEM) is used to perform the numerical investigations. In addition, various materials combinations are used as a doping with silica which is highly helpful to increase or decrease the refractive index of the core material. The multimode fiber is identified by the normalized frequency or V parameter. Besides, the high birefringence value, low loss value, minimum crosstalk with high sensitivity response of <span>(1.46times {10}^{-2})</span>, <span>(2times {10}^{-11})</span> <i>dB/m,</i> 41.80 dB and 88,280.46 nm<i>/RIU</i>, respectively, are achieved from the numerical investigations over the wavelength range from 1.55 µm to1.65 µm for the different LP modes. Moreover, good responses also obtain for the numerical aperture, V number, coupling length and other parameters. In the end, every value reveals both an easy-to-fabricate structure design as well as adequate performance analysis. The suggested fiber structure can support many modes and might be applicable in the field of optical communications and spatial multiplexing based on the user demand.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Resonant terahertz generation by the interaction of amplitude-modulated laser beams with anharmonic nanoparticles in the presence of DC electric and Wiggler magnetic fields 在直流电场和摆动磁场作用下，调幅激光束与非谐波纳米粒子相互作用产生谐振太赫兹

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-05-15 DOI: 10.1007/s11082-025-08254-5

Anuj Dandain, Shivani Vij, Niti Kant, Oriza Kamboj

引用次数: 0

Nolvel photonic crystal fiber biosensors for detecting volatile organic compounds in the terahertz region 用于探测太赫兹区域挥发性有机化合物的光子晶体光纤生物传感器

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-05-15 DOI: 10.1007/s11082-025-08224-x

Nur Basirah Mamit, Abdul Mu’iz Maidi, Nianyu Zou, Feroza Begum

{"title":"Nolvel photonic crystal fiber biosensors for detecting volatile organic compounds in the terahertz region","authors":"Nur Basirah Mamit, Abdul Mu’iz Maidi, Nianyu Zou, Feroza Begum","doi":"10.1007/s11082-025-08224-x","DOIUrl":"10.1007/s11082-025-08224-x","url":null,"abstract":"<div><p>This paper proposes a photonic crystal fibre (PCF) sensor designed for detecting volatile organic compounds (VOCs), specifically benzene, toluene, and p-xylene, within the terahertz frequency range of 0.6 to 3.0 THz. The sensor features a large circular core holes and two layers of circular air holes arranged in a circular lattice, which enhances light-analyte interaction and optical confinement. The design and numerical analysis were conducted using COMSOL Multiphysics (version 5.6) with the finite element method (FEM) to evaluate key optical properties, including effective refractive index, relative sensitivity, power fraction, confinement loss, effective area, and numerical aperture. The results indicate that at an optimum frequency of 1.0 THz, the proposed sensor achieves high relative sensitivity values of 99.6% for benzene, 99.92% for toluene, and 99.91% for p-xylene, with ultra-low confinement losses in the order of 10<sup>–13</sup> to 10<sup>–14</sup> dB/m. These findings demonstrate the sensor’s potential for highly sensitive VOC detection in industrial and medical applications. Moreover, the simplicity of the PCF structure enhances its feasibility for fabrication and practical implementation.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Efficient 2 (times) 2 multimode switch employing ({hbox {Sb}}_{2}{hbox {Se}}_{3}) phase change material for enhanced mode division multiplexing systems 采用({hbox {Sb}}_{2}{hbox {Se}}_{3})相变材料的高效2 (times) 2多模开关，用于增强模分多路复用系统

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-05-15 DOI: 10.1007/s11082-025-08238-5

Ali Atri, Abbas Zarifkar

{"title":"Efficient 2 (times) 2 multimode switch employing ({hbox {Sb}}_{2}{hbox {Se}}_{3}) phase change material for enhanced mode division multiplexing systems","authors":"Ali Atri, Abbas Zarifkar","doi":"10.1007/s11082-025-08238-5","DOIUrl":"10.1007/s11082-025-08238-5","url":null,"abstract":"<div><p>Mode division multiplexing (MDM) technology represents a significant advancement in high-capacity optical data transmission in photonics integrated circuits (PICs). Among the critical components in MDM architecture are multimode switches that enable signals to be routed simultaneously along different waveguides. In this study, we present a two-mode 2<span>(times)</span>2 optical switch utilizing an asymmetric directional coupler with <span>({hbox {Sb}}_{2}{hbox {Se}}_{3})</span> as the phase change material which is designed at an ultra-compact footprint of 53 <span>({upmu })</span>m <span>(times)</span> 6 <span>({upmu })</span>m. This switch effectively routes the first two transverse magnetic modes simultaneously over a broad bandwidth within the third telecommunications window, specifically from 1535 to 1565 nm. Our 3D finite-difference time-domain simulation results indicate that the switch exhibits a low insertion loss of 0.78 dB and a crosstalk level of <span>(-)</span>7.98 dB in the “on” state across the specified bandwidth. Furthermore, in the “off” state, the switch maintains favorable performance characteristics, achieving insertion loss and crosstalk values of less than 0.41 dB and <span>(-)</span>15.69 dB throughout the operational bandwidth.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Study of optoelectronic and transport properties of SrCd2X2 (X = P, As, Sb) zintl-phase for renewable energy applications SrCd2X2 (X = P, As, Sb) zintl相的光电和输运特性研究

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-05-15 DOI: 10.1007/s11082-025-08253-6

Tariq M. Al-Daraghmeh, Ghulam M. Mustafa, Bisma Younas, Omar Zayed, S. Bouzgarrou, Imed Boukhris, Murefah Mana Al-Anazy, M. S. Al-Buriahi, Q. Mahmood

{"title":"Study of optoelectronic and transport properties of SrCd2X2 (X = P, As, Sb) zintl-phase for renewable energy applications","authors":"Tariq M. Al-Daraghmeh, Ghulam M. Mustafa, Bisma Younas, Omar Zayed, S. Bouzgarrou, Imed Boukhris, Murefah Mana Al-Anazy, M. S. Al-Buriahi, Q. Mahmood","doi":"10.1007/s11082-025-08253-6","DOIUrl":"10.1007/s11082-025-08253-6","url":null,"abstract":"<div><p>The Zintl phase is a developing group of materials with considerable potential for use in solar cells and energy harvesting technologies. This study comprehensively investigates the structural, electronic, optical, and thermoelectric characteristics of novel Zintl phase alloys SrCd<sub>2</sub>X<sub>2</sub> (X = P, As, Sb) using the density functional theory-based Wien2k code. Thermodynamic and dynamic stability is confirmed by calculating the enthalpy of formation and phonon band structures. The band structure analysis systematically decreased the band gap from 1.32 eV to 0.81 eV and 0.43 eV to replace P with As and Sb, respectively. The interaction between the valence and conduction band edges of the p- and d-states of X and Cd is essential for modulating the band gaps and other physical characteristics. The observed high absorption coefficient with absorption bands in the visible and infrared regions suggests the potential for optoelectronic and IR detectors. Notably, the 1.32 eV bandgap of SrCd<sub>2</sub>P<sub>2</sub> is well within the ideal bandgap range for solar cell applications. Furthermore, applying the BoltzTrap code, the transport properties are evaluated, revealing a low thermal conductivity (0.2–1.7 W/mK) along with a reasonable Seebeck coefficient (242–268 µV/K) and power factor (2.3 W/mK<sup>2</sup>). These findings collectively indicate promising thermoelectric performance.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Insights into acoustic beams in nonlinear, weakly dispersive and dissipative media 非线性、弱色散和耗散介质中的声波束

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-05-15 DOI: 10.1007/s11082-025-08220-1

Mostafa M. A. Khater, Heng Wang, Suleman H. Alfalqi, Aleksander Vokhmintsev, Saud Owyed

{"title":"Insights into acoustic beams in nonlinear, weakly dispersive and dissipative media","authors":"Mostafa M. A. Khater, Heng Wang, Suleman H. Alfalqi, Aleksander Vokhmintsev, Saud Owyed","doi":"10.1007/s11082-025-08220-1","DOIUrl":"10.1007/s11082-025-08220-1","url":null,"abstract":"<div><p>This study examines the (2+1)–dimensional dissipative Zabolotskaya–Khokhlov equation, a fundamental nonlinear wave model with broad applications in diverse physical domains, such as acoustic wave propagation, nonlinear optics, and fluid dynamics. This equation exhibits profound connections with other nonlinear evolution equations, particularly in describing wave interactions in dispersive and dissipative media, highlighting its significance in characterizing complex wave phenomena. The principal objective of this work is to derive both closed-form and numerical solutions to gain deeper insight into the equation’s underlying dynamics. To this end, we employ the Khater II and the modified Kudryashov approaches-two systematic mathematical techniques for obtaining explicit solutions. Additionally, He’s variational iteration method is implemented as a numerical scheme to evaluate the reliability and precision of the derived exact solutions. A comparative assessment of the analytical and numerical results underscores the accuracy of the obtained solutions and the effectiveness of the employed methods in handling highly nonlinear wave systems. This investigation provides novel perspectives on dissipative wave dynamics and illustrates the advantages of integrating exact and numerical methodologies. The findings hold substantial implications for applications in fluid mechanics, nonlinear optics, and acoustic wave theory, fostering a more comprehensive understanding of nonlinear dissipative structures.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

On the design considerations for room-temperature CMOS-based terahertz radiation detectors: bridging the gap for (sub) terahertz detection and imaging integrated circuits 基于cmos的室温太赫兹辐射探测器的设计考虑：填补（亚）太赫兹探测和成像集成电路的空白

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-05-15 DOI: 10.1007/s11082-025-08173-5

A. Kuan-Way Chee

{"title":"On the design considerations for room-temperature CMOS-based terahertz radiation detectors: bridging the gap for (sub) terahertz detection and imaging integrated circuits","authors":"A. Kuan-Way Chee","doi":"10.1007/s11082-025-08173-5","DOIUrl":"10.1007/s11082-025-08173-5","url":null,"abstract":"<div><p>Complementary metal-oxide-semiconductor (CMOS) integrated circuits operating at (sub) terahertz frequencies ranging from 0.1 through 10 THz are of increasing importance, with applications spanning from sensing to ultrahigh-speed communications. Notably, exceptional data rates are expected in the deployment of terahertz technology for future 6G wireless communications-enabled Industrial Internet of Everything to transcend the threshold of the 5th Industrial and Technological Revolution. Nevertheless, despite the gradually closing detector technology gap between classical microelectronics and optoelectronics a major unmitigated shortcoming is the hitherto lack of an established design environment or technique to develop commercial THz CMOS circuits. Our study delves into the physical principles and engineering techniques germane to the metal-oxide-semiconductor field-effect transistor-based THz direct detector at room-temperature operation. By exploring and tackling the contemporaneous technical and economic barriers that hinder industrial-scale production of low-cost THz devices, this research aims to identify current process design kit deficiencies from CMOS foundries, uncover design rules, and recommend optimization schemes via the inherent phenomena of the direct detection mechanism, technology compatibility, and figures-of-merit. Ultimately, the goal is to develop a low-cost, compact THz detector capable of achieving high-performance room-temperature operation. This entails meticulous investigation of key aspects such as high sensitivity, low noise, and electrical (voltage) responsivity, all of which collectively engender the actualization of state-of-the-art device and circuit parameters.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 5","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143949632","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0