Optical and Quantum Electronics最新文献_第3页

Electronic transport and photoelectric properties of (textrm{WTe}_2)-(textrm{MoTe}_2) heterostructure transistor

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-02-09 DOI: 10.1007/s11082-024-08034-7

Ashkan Horri, Mohammad Solimannejad, Rezvan Rahimi

{"title":"Electronic transport and photoelectric properties of (textrm{WTe}_2)-(textrm{MoTe}_2) heterostructure transistor","authors":"Ashkan Horri, Mohammad Solimannejad, Rezvan Rahimi","doi":"10.1007/s11082-024-08034-7","DOIUrl":"10.1007/s11082-024-08034-7","url":null,"abstract":"<div><p>This paper presents a detailed study of the electronic transport and photoelectric properties of a <span>(WTe_2-MoTe_2)</span> heterostructure phototransistor, designed to enhance performance in ultraviolet and infrared photodetection applications. Using density functional theory and non-equilibrium Green’s function methods, we simulate the device’s behavior under different gate voltages and light polarizations to assess its effectiveness in spectral response and charge transport. The <span>(WTe_2-MoTe_2)</span> p-n junction demonstrates a favorable type-II band alignment, enabling efficient separation of photogenerated carriers. The results reveal that the device achieves a high rectification ratio of <span>(10^5)</span>, a photoresponsivity of 67.6 mA/W, an external quantum efficiency of <span>(31.12%)</span>, and a detectivity of <span>(2.7times 10^{10})</span> Jones, positioning it as a strong competitor among similar phototransistors. The phototransistor shows peak photoresponsivity under Z-polarized light in the infrared and violet regions (1.05 eV and 3.2 eV) and exhibits heightened sensitivity in the ultraviolet range (4.6 eV) under Y-polarized light. The application of gate voltages further enhances ultraviolet detection, underscoring the tunable nature of the device’s photoelectric response. These results identify the <span>(WTe_2-MoTe_2)</span> heterostructure as a promising candidate for high-sensitivity, broadband photodetection, demonstrating its versatility across various spectral ranges for advanced optoelectronic systems requiring selective sensitivity and efficient light detection.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143370038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High gain multi-band circularly polarized bi-layered metasurface patch array antenna with dual-orthogonal feeds

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-02-09 DOI: 10.1007/s11082-025-08068-5

Mona PourHosseini, Saughar Jarchi, Pejman Rezaei, Zahra Ghattan Kashani

{"title":"High gain multi-band circularly polarized bi-layered metasurface patch array antenna with dual-orthogonal feeds","authors":"Mona PourHosseini, Saughar Jarchi, Pejman Rezaei, Zahra Ghattan Kashani","doi":"10.1007/s11082-025-08068-5","DOIUrl":"10.1007/s11082-025-08068-5","url":null,"abstract":"<div><p>In this article, a renovated patch array antenna is developed that achieves features such as high gain and circular polarization by introducing a bi-layered eight-shaped metasurface on top of the feed. The antenna is designed as a dual-feed array structure, utilizing silicon materials for the substrates and featuring two gold patches operating at frequencies of different dimensions with two orthogonal feeds optimized to achieve wide bandwidth operation. Along with modifying the gaps and arcs in the antenna, circular polarization can be made possible with an appropriate pattern of the unit cell. Finally, a designed eight-shaped metasurface has been used to control wave propagation, improve polarization switching properties, and increase the bandwidth of impedance and also axial ratio. The substrates of the renovated patch antennas and that of the bi-layered metasurface are respectively made of silicon and silicon dioxide to reduce undesired waves. Different Components are separated from each other with silicon material without an air gap. The impedance bandwidth covers a wide range of frequencies from 3.24 to 5.44 THz, about 50%. The results show that the axial ratio is in four ranges (3.48–3.74 THz), (4.08–4.16 THz), (4.23–4.27 THz) and (5.05-6 THz), which are in good coverage with the impedance bandwidth.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143370037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Analyzing multiplicative noise effects on stochastic resonant nonlinear Schrödinger equation via two integration algorithms

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-02-09 DOI: 10.1007/s11082-025-08067-6

Khaled A. Gepreel, Reham M. A. Shohib, Mohamed E. M. Alngar

引用次数: 0

Numerical simulation and performance optimization of non-toxic Cs2TiBr6 single-halide perovskite solar cell by introducing interfacial defect layers

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-02-09 DOI: 10.1007/s11082-024-08023-w

Jaspinder Kaur, Ajay Kumar Sharma, Rikmantra Basu, Harjeevan Singh

{"title":"Numerical simulation and performance optimization of non-toxic Cs2TiBr6 single-halide perovskite solar cell by introducing interfacial defect layers","authors":"Jaspinder Kaur, Ajay Kumar Sharma, Rikmantra Basu, Harjeevan Singh","doi":"10.1007/s11082-024-08023-w","DOIUrl":"10.1007/s11082-024-08023-w","url":null,"abstract":"<div><p>Recently, lead-based perovskite solar cells (PSCs) grabbed the worldwide popularity in photovoltaic industry owing to its remarkable properties. Few challenges such as toxic elements, instability, low shelf life etc. restricts the use of inorganic–organic lead based PSCs. To overcome these issues, eco-friendly, lead-free and stable cesium titanium (Cs<sub>2</sub>TiBr<sub>6</sub>) single-halide based absorber material have been introduced. In this work, FTO/SnO<sub>2</sub>/ Cs<sub>2</sub>TiBr<sub>6</sub>/MoOx/Au structure has been simulated by SCAPS-1D. The factors such as light absorbing layer thickness including charge transport layer thickness, doping, defect density, operating temperature, quantum efficiency etc. have thoroughly been examined in relation to different characteristics of PSCs. After calculation of all these parameters then a comparison is made between the proposed (Cs<sub>2</sub>TiBr<sub>6</sub>) structure with the previously reported experimental and simulation based Cs<sub>2</sub>TiBr<sub>6</sub> perovskite structures. As a result, maximum power conversion efficiency (PCE) reached upto 20.11% along a FF = 82.17, Voc = 1.488 V, and Jsc = 16.34 mA/cm<sup>2</sup>. Hence, this work motivates the researchers to fabricate the highly efficient, low-toxic and stable PSCs in future for solar cell industry.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143370005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Heat transfer capability analysis of hybrid Brinkman-type fluid on horizontal solar collector plate through fractal fractional operator

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-02-09 DOI: 10.1007/s11082-024-08025-8

Dolat Khan, Gohar Ali, Zareen A. Khan

{"title":"Heat transfer capability analysis of hybrid Brinkman-type fluid on horizontal solar collector plate through fractal fractional operator","authors":"Dolat Khan, Gohar Ali, Zareen A. Khan","doi":"10.1007/s11082-024-08025-8","DOIUrl":"10.1007/s11082-024-08025-8","url":null,"abstract":"<div><p>It is essential to enhance solar-powered manipulating plates, photovoltaic lamps, photovoltaic cells, and solar-powered water syphoning in order to take use of solar heat. The next generation of fluids, known as nanofluids, have thermal characteristics that are superior to those of traditional fluids. Nano fluids are crucial in many thermal applications, such as the solar power generation, heat exchangers, car industry. Using a nanofluid to forecast the heat transfer parameters of a flat-plate solar collector, a generalized Brinkman-type fluid model was constructed. The effect of thermal radiation is considered. The fractal fractional derivative is used to extend the classical model into generalized model, after which the numerical solutions are determined using the Crank–Nicholson technique. All the controlling factors are studied parametrically, and some additional significant findings are tabulated for visual representation. In the current study, a composition of different nano-sized solid particles, such as Single walled carbon nanotubes and Multi-walled carbon nanotubes, was conducted in a water-based fluid. It was found that adding the composition of single and multi walled carbon nanotubes to the working base fluid (water) can increase the heat transfer rate as compared to the traditional nanofluid, this improves flat-plate solar collector performance by increasing the capacity for absorbing solar radiation.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143369991","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Propagation properties of partially coherent vortex cosine-hyperbolic-Gaussian beams in uniaxial crystal orthogonal to the optical axis

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-02-06 DOI: 10.1007/s11082-025-08047-w

M. Lazrek, M. Yaalou, Z. Hricha, A. Belafhal

引用次数: 0

Fabrication of WO₂I₂/poly o-amino thiophenol porous spherical-nanocomposite with promising optical absorbance for photodetector device applications

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-02-05 DOI: 10.1007/s11082-024-07995-z

Fatemah H. Alkallas, Amira Ben Gouider Trabelsi, Tahani A. Alrebdi, Mohamed Rabia

{"title":"Fabrication of WO₂I₂/poly o-amino thiophenol porous spherical-nanocomposite with promising optical absorbance for photodetector device applications","authors":"Fatemah H. Alkallas, Amira Ben Gouider Trabelsi, Tahani A. Alrebdi, Mohamed Rabia","doi":"10.1007/s11082-024-07995-z","DOIUrl":"10.1007/s11082-024-07995-z","url":null,"abstract":"<div><p>This study focuses on the fabrication of WO₂I₂/poly o-amino-thiophenol porous spherical-nanocomposite (WO₂I₂/POATP PS-nanocomposite) with promising optical absorbance for photodetector applications. The PS-nanocomposite is synthesized through the oxidation of o-amino-thiophenol using iodine, followed by a reaction with Na₂WO₄. The resulting nanocomposite exhibits wide optical absorbance extending into the IR region and a small bandgap of 2.0 eV. The spherical particles have pores with a diameter of 5 nm, and their crystalline peaks demonstrate excellent crystallinity with a crystal size of 121 nm. This combination of crystalline behavior, morphology, and optical absorbance suggests that the WO₂I₂/POATP PS-nanocomposite is a highly sensitive photodetector suitable for a broad optical spectrum, including UV, visible, and IR regions. The device’s application in photon sensing is evaluated by measuring the photocurrent using linear sweep voltammetry, determining the current density (Jph) under light and dark conditions (Jo). The Jph and Jo values are found to be 0.8 and 0.48 mA/cm², respectively, resulting in a photocurrent of 0.32 mA/cm², a promising value that indicates significant photon sensitivity. The photoresponsivity (R) is assessed based on the impact of photon energies on the Jph values, with R values increasing from 7.2 to 8.0 mA/W as the wavelength decreases from 540 to 340 nm. Similarly, the detectivity (D) value increases from 0.164 × 10¹⁰ to 0.181 × 10¹⁰ Jones over the same wavelength range. At 730 nm, both R and D maintain substantial values of 6.4 mA/W and 0.145 × 10¹⁰ Jones, respectively. This fabricated optoelectronic device, with its excellent sensitivity, stability, reproducibility, low cost, and potential for mass production, holds significant promise for industrial applications as a highly effective photodetector.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143184758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Wide-band high performance optical modulator based on a stack of graphene and h-BN layers with plasmonic edge mode

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-02-01 DOI: 10.1007/s11082-025-08057-8

Hossein Karimkhani, Mohammad Ataul Karim

{"title":"Wide-band high performance optical modulator based on a stack of graphene and h-BN layers with plasmonic edge mode","authors":"Hossein Karimkhani, Mohammad Ataul Karim","doi":"10.1007/s11082-025-08057-8","DOIUrl":"10.1007/s11082-025-08057-8","url":null,"abstract":"<div><p>Modulation depth and its associated loss pose a significant challenge in electro-optical telecommunication systems. Optimal modulators strive to enhance modulation depth while minimizing loss rates. We propose a high-performance electro-optical hybrid plasmonic modulator based on graphene, hexagonal Boron Nitride (h-BN), and Molybdenum Disulfide (MoS<sub>2</sub>) layers. The substrate of the proposed modulator is SiO<sub>2</sub> on a Silicon wafer, where Ag layers are embedded in the SiO<sub>2</sub> layer and on top of the structure. Graphene layers at the edge of the upper and lower Ag layers and h-BN in between them create a waveguide capable of transmitting input light through the structure. Graphene and MoS<sub>2</sub> layers increase the amount of light interaction increasing, in turn, modulation depth. The edge mode in the graphene layers confines light properly and increases the electrical field intensity in a narrow gap. The modulator’s performance is examined using a three-dimensional finite-difference time-domain (FDTD) method. The structure’s modulation depth, for a range of temperature, ranges between 40.54 dB/μm and 42.05 dB/μm. The maximum loss is estimated to be 5.723 dB/μm at 1.3 μm for 0.65 eV chemical potential, which yields a figure of merit (FoM) of 12.5 and extinction ratio (ER) of 99.51 dB. The equivalent circuit for the modulator is investigated in terms of parameters such as energy consumption and modulation bandwidth. The modulator demonstrates an impressively low energy consumption per bit, underscoring its efficiency and practicality. The modulator’s characteristics primarily arise from utilizing a thin layer of h-BN instead of thick dielectric layers. Unlike the previously examined configurations, applying voltage through the graphene layers substantially diminishes the insertion loss.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143108148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Phase dependence of entanglement generation in a PT-symmetric system of two micro-cavities

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-02-01 DOI: 10.1007/s11082-025-08045-y

Vinh Le Duc, Hong Nguyen Thi, Khoa Doan Quoc

引用次数: 0

Interfacial optimization of hematite electron transport layer for enhanced charge transport in perovskite solar cells

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2025-02-01 DOI: 10.1007/s11082-024-08033-8

Muhammad Anwar Jan, Hafiz Muhammad Noman, Akbar Ali Qureshi, Fuchun Yang

{"title":"Interfacial optimization of hematite electron transport layer for enhanced charge transport in perovskite solar cells","authors":"Muhammad Anwar Jan, Hafiz Muhammad Noman, Akbar Ali Qureshi, Fuchun Yang","doi":"10.1007/s11082-024-08033-8","DOIUrl":"10.1007/s11082-024-08033-8","url":null,"abstract":"<div><p>Perovskite solar cells (PSCs) have emerged as a viable contender for the third-generation solar cell, thanks to their exceptional characteristics involving high power conversion efficiency (PCE) and comparatively low fabrication costs. However, the challenges associated with interfacial recombination and poor device stability under operating conditions are still limiting their commercial viability. These challenges can be overcome by incorporating interfacial layers in order to enhance charge transport and reduce recombination losses. Herein, we introduce piperazine dihydriodide (PZDI) as an interfacial layer between the hematite electron transport layer (ETL) and absorber layer in PSCs. The high-quality PZDI layer further passivates surface defects and improves energy level alignment to facilitate more efficient charge extraction. The PCE was noted significantly higher by incorporation of the PZDI interfacial layer, reaching 17.5%, compared to 13.0% for the reference device without an interfacial layer. Long-term stability tests demonstrated that the target device retains 91.80% of its initial efficiency compared to 82.9% for the reference device after 500 h. These findings highlight the key function of the PZDI interfacial layer enhancing the photovoltaic (PV) performance of PSCs and can serve as crucial components in the development of long-lasting and high-efficiency PV.</p><h3>Graphical abstract</h3>\u0000<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 2","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143108147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0