Optical and Quantum Electronics最新文献

{"title":"Tunable Goos–Hänchen shift in Floquet topological insulator thin films","authors":"Nimra Ali,&nbsp;Muzamil Shah,&nbsp;Munsif Jan,&nbsp;Qaisar Abbas Naqvi","doi":"10.1007/s11082-025-08499-0","DOIUrl":"10.1007/s11082-025-08499-0","url":null,"abstract":"<div><p>This study presents a theoretical investigation into the tunable Goos–Hänchen (GH) shift in Floquet topological insulator (FTI) thin films when subjected to an off-resonant circularly polarized light. A key characteristic of these FTI thin films is their tunable bandgap, which can be dynamically adjusted by illuminating them with right- or left-handed circular polarization (RCP/LCP). The topological phases can be tuned by optical field strength and are classified by their Chern numbers. The Kubo formula is used to compute the optical conductivities in the FTI thin film. Using angular spectrum analysis, we derive a closed-form analytical expression for the GH shift. Our results reveal that the Hall conductivity in FTI thin films is highly sensitive to the intensity of the applied light field across various topological phases. We reveal that, far from the optical transition energies, the GH shift experiences substantial enhancement near the Brewster angle. Furthermore, we demonstrate that topological quantum phase transitions (TQPTs) influence the magnitude of the beam shifts, as well as the shifting of the Brewster angle, highlighting the GH shift as a promising tool for probing such transitions at the nanoscale. These findings offer valuable insights that could enable next-generation applications in topological photonics, quantum systems, and tunable optoelectronic technologies.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145316068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical emission spectroscopy for in-line control of laser additive manufacturing with metal wire of titanium–nickelide and magnesium alloys","authors":"Artem Sazhin,&nbsp;Alexander Dubrov,&nbsp;Ilya Ozheredov","doi":"10.1007/s11082-025-08507-3","DOIUrl":"10.1007/s11082-025-08507-3","url":null,"abstract":"<div><p>Additive manufacturing, particularly laser additive manufacturing (LAM), has revolutionized the field of materials engineering by enabling the precise fabrication of complex geometries with bespoke properties. This technology uses laser energy to locally melt source metal material in the form of powder or wire layer-by-layer to create three-dimensional objects. The versatility of LAM provides a unique opportunity to utilize a wide range of metallic alloys and composite materials, allowing advancements in industries such as aerospace, automotive, and biomedical engineering. Despite the remarkable potential of LAM, a critical challenge facing its adoption is the potential variation in alloy compositions during the additive manufacturing process. These variations can arise from factors such as selective evaporation of alloying elements, oxidation, or fluctuations in the thermodynamic conditions of the melting-solidification cycle. Addressing these issues requires a nuanced understanding of the in-line chemical and physical transformations that occur. Spectroscopic approaches provide real-time monitoring capabilities to detect and quantify compositional changes, offering a pathway to better control and stabilization of the LAM process. We have developed an optical emission spectroscopy system for in-line composition monitoring during the laser metal deposition process. The system is based on a high-resolution optical spectroscopy sensor and allows the in-line collection of unique spectral features intrinsic to the materials used. Using intelligent data analysis and machine learning methods, the system can tailor the additive process parameters to achieve the desired material composition, as well as optimal biochemical and biomechanical compatibility characteristics. The capabilities of the developed spectroscopic system have been demonstrated in the additive manufacturing of superelastic titanium–nickelide and magnesium alloys and surface structures suitable for medical use.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145316070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design and analysis of an improved spr biosensor utilizing a Mxene sandwich structure for breast cancer cell sensing","authors":"Milad Razmpoosh,&nbsp;Abdolrahman Namdar,&nbsp;Reza Abdi-Ghaleh","doi":"10.1007/s11082-025-08497-2","DOIUrl":"10.1007/s11082-025-08497-2","url":null,"abstract":"<div><p>Early and precise detection of cancer biomarkers is essential for improving treatment outcomes and survival rates. In this work, we propose a highly sensitive surface plasmon resonance (SPR) biosensor that incorporates a mirror-symmetric sandwich structure using Ti₃C₂Tₓ MXene layers. The biosensor architecture is based on a Kretschmann configuration, comprising a BK7 prism, a dual-metallic Cu/Ni film, and two symmetrically placed MXene nanosheets that encapsulate the analyte region. This mirrored sandwich design enhances the electromagnetic field-analyte interaction, thereby significantly boosting sensing performance. The optical response of the structure was modeled using the transfer matrix method (TMM), accounting for multi-layer interference and complex refractive indices. Performance was evaluated by detecting two breast cancer cell lines—MCF-7 and MDA-MB-231—based on their refractive index signatures. The proposed biosensor achieved a sensitivity of 315.9°/RIU for MCF-7 cells and 302.8°/RIU for MDA-MB-231 cells, with corresponding figures of merit (FOM) of 48.7 RIU^⁻1 and 47.99 RIU^⁻1, respectively. These results represent a significant improvement over existing SPR biosensors. Analyses of power loss revealed that a single MXene layer configuration facilitates maximal energy transfer between incident light and surface plasmons, contributing to the observed sensitivity enhancements. This study underscores the potential of MXene-based mirror-symmetric sandwich architectures for next-generation, label-free cancer diagnostics, combining high sensitivity, structural simplicity, and scalability for practical biomedical applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145284499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A tunable ultra-wideband terahertz metamaterial filter based on vanadium dioxide","authors":"Xianhua Yin,&nbsp;Xinyang Meng,&nbsp;Linkai Tang,&nbsp;Huo Zhang,&nbsp;An Li","doi":"10.1007/s11082-025-08495-4","DOIUrl":"10.1007/s11082-025-08495-4","url":null,"abstract":"<div><p>Currently, terahertz (THz) filters face challenges such as narrow bandwidth and insufficient tuning capability, which hinder their applications in THz communication and sensing. To address these issues, this paper proposes a tunable ultra-wideband THz metamaterial filter based on vanadium dioxide (VO₂). The filter comprises a three-layer periodic structure: the front and back layers are VO₂-metal composite layers, the middle layer is a metal mesh layer, and each layer is separated by polyimide dielectric spacers. The physical mechanism is elucidated through impedance matching theory and the equivalent circuit model. When VO₂ is in the insulating state, the filter exhibits ultra-wideband bandpass characteristics with a transmission coefficient exceeding 90% in the frequency range of 3.15–8.81 THz, achieving a relative bandwidth of 116% and shielding effectiveness below 1 dB within the passband. When VO₂ transitions to the metallic state upon heating, the transmission coefficient drops below 15% across 0.1–8.78 THz, with a maximum transmission modulation depth of 91.5%. Additionally, the SE exceeds 20 dB within 0.1–8.72 THz. The filter demonstrates excellent polarization insensitivity and angular stability for transverse electric and transverse magnetic polarization modes. Featuring a simple structural design, wide passband, and tunability, this filter holds significant application potential in 6G communication and electromagnetic shielding.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 10","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Atmospheric modeling of free-space optical transmission: satellite downlinks and horizontal channels","authors":"Artur Czerwinski","doi":"10.1007/s11082-025-08505-5","DOIUrl":"10.1007/s11082-025-08505-5","url":null,"abstract":"<div><p>We present a unified framework for modeling free-space optical (FSO) communication channels under realistic atmospheric conditions, with a focus on both satellite-to-Earth downlinks and horizontal near-ground links. The model accounts for three key factors affecting transmittance: deterministic attenuation from atmospheric absorption and scattering, geometric diffraction losses due to transverse beam broadening, and stochastic intensity fluctuations induced by atmospheric turbulence. For downlink scenarios, we analyze how the ground station altitude influences channel performance, particularly in terms of turbulence-induced variability. Our findings indicate that higher-altitude stations offer enhanced stability of received signals, even when average transmittance remains largely unchanged. The framework is also extended to horizontal FSO links, relevant for inter-city communication. We show that atmospheric effects, including turbulence and attenuation, play a critical role even over moderate distances, emphasizing the importance of realistic modeling for both classical and quantum optical technologies. The results provide practical insight for designing high-fidelity FSO systems, especially in the context of quantum communication, where both loss and stability are essential performance metrics.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 10","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-025-08505-5.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145315786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimization of high-efficiency hole-selective passivating contacts in p-type TOPCon solar cells approaching 26%: a comparative performance study","authors":"Rabia Saeed,&nbsp;Sofia Tahir,&nbsp;Shammas Mushtaq,&nbsp;M. Haneef,&nbsp;Rasmiah S. Almufarij,&nbsp;Javed Iqbal,&nbsp;Khushi Muhammad Khan,&nbsp;Noman Ashraf,&nbsp;Lamiaa G. Alharbe,&nbsp;Arslan Ashfaq","doi":"10.1007/s11082-025-08488-3","DOIUrl":"10.1007/s11082-025-08488-3","url":null,"abstract":"<div><p>High-efficiency hole-selective passivating contacts are crucial for achieving high performance in solar cells via full-area charge extraction. In this study, we numerically simulated the hole-selective passivating contact using Al₂O₃ with MoO_x, NiO_x, WO_x, or CuO_x and applied it to the rear of a p-type tunnel oxide passivated contact (TOPCon) solar cell. Our investigation revealed that the ultrathin layer of Al₂O₃ with a 10⁻⁷ cm⁻² pinhole density serving as a tunneling layer, played a vital role in enhancing the hole selectivity of the simulated structures. We have optimized the best device structure with NiO_x as the back surface layer in the TOPCon solar cell. We have identified a thickness for the of 4 nm NiO_x layer, with a trap density to 10¹⁴ cm⁻³. The optimal thickness for the tunneling layer Al₂O₃ was found to be approximately 0.3 nm. We have obtained the highest efficiency of 25.89% in the p-type TOPCon device with NiO_x as the high efficiency hole selectivity, marking the highest performance among all oxide-based p-type TOPCon solar cells in our analysis. This study underscores the significant potential of the hole-selective passivating material Al₂O₃/NiO_x/Ag in full-area charge carriers selective layer for solar cells.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 10","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145256784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A decade of gallium oxide thin film research: a bibliometric and co-citation network analysis","authors":"Jiya James,&nbsp;Nibu B. Thomas,&nbsp;C. S. Keerthana,&nbsp;A. Santhoshkumar,&nbsp;Smitha Joseph,&nbsp;Vinoy Thomas,&nbsp;A. C. Saritha","doi":"10.1007/s11082-025-08485-6","DOIUrl":"10.1007/s11082-025-08485-6","url":null,"abstract":"&lt;div&gt;&lt;p&gt;The ultrawide bandgap (UWBG) semiconductor gallium oxide (Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;) has rapidly emerged as a transformative material in electronic and optoelectronic applications due to its exceptional properties—high breakdown electric field, chemical stability, and compatibility with low-cost, large-area substrates. Among its polymorphs, β-Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; has become the focal point of intense global research, particularly in the context of thin film technologies for power devices, solar-blind ultraviolet (UV) photodetectors, and high-temperature sensors. Despite this growing interest, a comprehensive, data-driven assessment of the knowledge structure and research evolution within this domain has, to our knowledge, not been previously attempted in this depth specifically for Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; thin-film research. This study presents an in-depth bibliometric and co-citation network analysis of Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; thin film research from 2015 to 2025. The dataset of 945 articles was retrieved from the Web of Science Core Collection on June 27, 2025, using the keywords ‘thin film’ AND (‘Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;’ OR ‘Gallium Oxide’), limited to English-language journal articles indexed in SCI-EXPANDED from 2015 to 2025. Our findings highlight a steady rise in publications and citations, peaking in 2024, with significant intellectual contributions by researchers such as Stephen Pearton, Masataka Higashiwaki, and Daoyou Guo. The document co-citation analysis identifies foundational works that have shaped key research directions, including β-Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; device architectures, defect engineering, and thin film fabrication methods. Cluster analysis reveals distinct thematic groupings such as solar-blind photodetectors, amorphous Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; devices, high-temperature sensing, and band structure engineering. Keywords like “oxide semiconductor” “temperature sensors,” and “ion implantation,” show strong recent citation bursts, indicating emerging trends in high-performance and application-specific device integration. The study also uncovers dominant global contributors—led by China, the USA, Japan, South Korea, and India—and emphasizes the roles of high-impact journals such as &lt;i&gt;Applied Physics Letters&lt;/i&gt;, &lt;i&gt;ACS Applied Materials &amp; Interfaces&lt;/i&gt;, and &lt;i&gt;Journal of Alloys and Compounds&lt;/i&gt;. The country/region, institutional, and author collaboration networks illustrate the growing interconnectedness of the field and the formation of strong research ecosystems. Overall, this paper offers a quantitative analysis of the last decade of Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; thin film research and provides a strategic lens to identify influential contributions, research gaps, and future opportunities. It serves as a valuable resource for scientists, engineers, and funding agencies aiming to navigate and contribute to the rapidly evolving landscape of Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;-based semiconduc","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 10","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145256783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Empirical models to describe the effects of gold nanoparticle on etched FBG response","authors":"Denys de Souza Scheiner,&nbsp;Nathalia de Campos Prediger,&nbsp;Tassia Regina de Oliveira,&nbsp;Ronaldo Censi Faria,&nbsp;Rafael Carvalho Barreto,&nbsp;Ricardo Canute Kamikawachi","doi":"10.1007/s11082-025-08501-9","DOIUrl":"10.1007/s11082-025-08501-9","url":null,"abstract":"<div><p>This work presents a numerical study on the response of etched fiber Bragg gratings (EFBGs) functionalized with gold nanoparticles (AuNPs). Based on numerical simulations, we propose models to analyze the attenuation and sensitivity of EFBGs as functions of the external refractive index and AuNP separation distance. The results reveal a decrease in electric field intensity within the fiber core and an increase around the AuNPs. The simulations indicate two distinct effects: electric field coupling between AuNPs and electric field scattering caused by the AuNPs. Building on these findings, we developed models incorporating AuNP separation distance to describe attenuation and sensitivity enhancement to external refractive index variations. These models predict a critical separation distance at which complete attenuation occurs for all external refractive indices and a maximum sensitivity enhancement at this distance. Experimental validation was performed on three EFBGs with different average AuNP separation distances: (189 ± 61) nm, (83 ± 15) nm, and (64 ± 15) nm. Despite simplifications in the simulation model, both attenuation and sensitivity enhancements observed experimentally align well with the predictions. These results confirm that the models’ free parameters allow the description of more complex conditions beyond those initially simulated. Thus, the empirical models proposed in this work provide a reliable background for describing attenuation and sensitivity as functions of AuNP separation distance and may serve as valuable tools for optimizing EFBGs functionalized with nanoparticles.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 10","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145256535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of cadmium doping on gas sensitivity for CdxNi1−xFe2O4 thin films prepared via pulsed laser deposition on silicon substrate","authors":"Farah T. M. Noori,&nbsp;Mohammed W. Muayad,&nbsp;Uday M. Nayef,&nbsp;Kareem H. Jawad,&nbsp;Muayed Y. Kdhair,&nbsp;A. Kadhim,&nbsp;Ayat A. Salman,&nbsp;Abbas M. Ali,&nbsp;Abrar Z. AbdulKadhim","doi":"10.1007/s11082-025-08484-7","DOIUrl":"10.1007/s11082-025-08484-7","url":null,"abstract":"<div><p>In this study, nanostructured Cd_xNi_1−xFe₂O₄(0 ≤ x ≤ 0.9) thin films were deposited on silicon substrates using pulsed laser deposition (PLD), and their structural, optical, and gas-sensing properties were thoroughly examined. X-ray diffraction analysis indicated that the samples possess a single-phase inverse spinel structure, with the average crystallite size decreasing from 13 nm (x = 0) to 8 nm (x = 0.9). The average grain size of Cd increased from 62.95 to 98.74 nm, as shown by atomic force microscopy, and the maximum surface roughness was 6.1 nm at x = 0.7. Optical measurements, which are associated with enhanced electronic polarizability, demonstrated improved UV photon absorption. Gas-sensing tests for 70 ppm NO₂ revealed a substantial increase in sensitivity, reaching a maximum of 145% at an optimal operating temperature of 200 °C, with the fastest response time of 4.7 s at x = 0.9 and a recovery time of approximately 21 s. These findings unequivocally demonstrate that well-controlled Cd doping significantly enhances the surface reactivity and electronic transport of Cdxni1-xfe2o4 thin films, making PLD-grown compositions highly competitive and effectively adjustable candidates for NO2 detection.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 10","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145256534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design of high-speed all-optical data security system based on XGM in SOA for optical networks","authors":"Vipul Singhal,&nbsp;Surinder Singh","doi":"10.1007/s11082-025-08493-6","DOIUrl":"10.1007/s11082-025-08493-6","url":null,"abstract":"<div><p>With the ever-growing demand for ultra-fast data transmission, ensuring the security of data transmission in optical networks has become paramount. Therefore, this manuscript proposes an all-optical data security system at a bit rate of 250 Gbps. The proposed system is an all-optical encryption-decryption system. An orthogonally polarized secure key (OPSK) is used to encrypt the signal at the transmitter, and the same key is used at the receiver to decrypt the encrypted signal. This system leverages OPSK, inducing cross-gain modulation in semiconductor optical amplifiers to cipher the input signal at the transmitter and decipher the encrypted signal at the receiver for the optical network. A high-quality (Q) factor of 39.91 dB and a good extinction ratio (ER) of 10.14 dB are obtained for the encrypted signal. Similarly, for the decrypted signal, good Q factor and ER of 22.59 dB and 11.42 dB, respectively, are obtained at a typical distance of 76.7 km for the operating speed of 250 Gbps, thereby validating its performance in ultra-high-speed optical networks.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 10","pages":""},"PeriodicalIF":4.0,"publicationDate":"2025-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145256536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}