Optical and Quantum Electronics最新文献_第4页

Effect of indium molar content in AlxInyGa(1-x–y)N/AlaGabN orderly quantized integrated quantum barrier for highly efficient droop free UV-C LEDs AlxInyGa(1-x-y)N/AlaGabN 有序量子化集成量子势垒中铟摩尔含量对高效无垂钓 UV-C LED 的影响

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2024-11-20 DOI: 10.1007/s11082-024-07609-8

Indrani Mazumder, Kashish Sapra, Ashok Chauhan, Manish Mathew, Kuldip Singh

{"title":"Effect of indium molar content in AlxInyGa(1-x–y)N/AlaGabN orderly quantized integrated quantum barrier for highly efficient droop free UV-C LEDs","authors":"Indrani Mazumder, Kashish Sapra, Ashok Chauhan, Manish Mathew, Kuldip Singh","doi":"10.1007/s11082-024-07609-8","DOIUrl":"10.1007/s11082-024-07609-8","url":null,"abstract":"<div>This article proposes a new Ultra-Violet (UV)-C Light emitting Diode (LED) structure based on orderly aligned Quaternary Nitride alloy based specially-designed quantized quantum barrier. In this article, we theoretically investigate the performance such as internal quantum efficiency (IQE), efficiency droop etc. of proposed structure and also compare it with the reference UV-C LED structure. In this proposed structure, there is no sudden potential barrier as in case of reference structure because of the strain compensation provided by the quantized periodic Superlattice-AlxInyGa(1-x–y)N/ AlaGabN quantum barrier. Active region epilayer crystal orientation balanced by introducing ‘In' molar content in alternate sub-layers of quantum barrier (QB). This allows for stronger carrier confinement in the active region, which enhances IQE to 72% from 32% (reference structure) and reduction in efficiency droop from 11% to 0.05% at current density of 200 A-cm−2. The variation in the density of states (DOS) for carrier allocation due to strain balance in the quantum barrier compared to the quantum wells (QW) is responsible for the significant increase in the electro-optical efficiency of the light emitting device.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

High dense cadmium lead-borate glasses: fabrication, physical properties and capability for γ-ray and neutron shields 高密度铅硼酸镉玻璃：制造、物理性质以及用于γ射线和中子屏蔽的能力

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2024-11-20 DOI: 10.1007/s11082-024-06751-7

Norah A. M. Alsaif, Hanan Al-Ghamdi, Z. Y. Khattari, Nada Alfryyan, A. M. Abdelghany, A. S. Abouhaswa, Y. S. Rammah

{"title":"High dense cadmium lead-borate glasses: fabrication, physical properties and capability for γ-ray and neutron shields","authors":"Norah A. M. Alsaif, Hanan Al-Ghamdi, Z. Y. Khattari, Nada Alfryyan, A. M. Abdelghany, A. S. Abouhaswa, Y. S. Rammah","doi":"10.1007/s11082-024-06751-7","DOIUrl":"10.1007/s11082-024-06751-7","url":null,"abstract":"<div>High dense cadmium lead-borate glasses with nominal compositions of (75-X)B2O3-XPbO-5Na2O-10CdO-10ZnO: X = 5–20 mol% in steps of 5 were fabricated via the melt quenching technique. The physical features and the capability of applying the prepared glasses as γ-ray and fast neutron shields have been investigated. The density (Ds) values increased from 4.820 g.cm−3 to 5.664 g cm−3 as PbO content increased from 5 to 20 mol% in the glass network. The polaron radius (rp) increased, while the field strength (F) reduced as PbO content increased. The boron ion concentration (NB) of the investigated glasses decreased from 2.231 × 1022 (ions.cm−3) to 1.503 × 1022 (ions/cm3). The inter-ionic distance (ri) values increased from 3.551 to 4.051 Ao. Values of the packing density (Pd) decreased from 0.888 to 0.695. The free volume (Vf) enhanced from 2.105 to 6.698 g mol−1 cm−2. The sample BPNCZPb-20 possessed the highest exposure (EBF) and energy absorption (EABF) buildup factors values at 1– 40 MFP among all investigated glasses. The half- value layer (HVLFCS) and the relaxation length (λFCS) values were the lowest for the BPNCZPb-5 glass sample. Therefore, the sample coded as BPNCZPb-20 can be considered as γ-ray shield, but BPNCZPb-5 glass can be used as a neutron shield.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Selection of hole transport layers through lattice mismatching using SCAPS-1D 利用 SCAPS-1D 通过晶格错配选择空穴传输层

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2024-11-20 DOI: 10.1007/s11082-024-07447-8

Ritu, Priyanka, Vinod Kumar, Ramesh Kumar, Fakir Chand

{"title":"Selection of hole transport layers through lattice mismatching using SCAPS-1D","authors":"Ritu,  Priyanka, Vinod Kumar, Ramesh Kumar, Fakir Chand","doi":"10.1007/s11082-024-07447-8","DOIUrl":"10.1007/s11082-024-07447-8","url":null,"abstract":"<div>In this article, a lead-free structure FTO/TiO2/NH3(CH2)2NH3MnCl4/spiro-OMeTAD/Au is investigated using SCPAS-1D simulator. Initially, impact of absorber thickness on performance is thoroughly examined and found 900 nm thick absorber solar cell superiuses performer (open circuit voltage = 1.18 V, short circuit current density = 24.47 mA/cm2, fill factor = 70.88%, power conversion efficiency = 19.70%). Further, numerous inorganic materials are investigated through lattice mismatching ratio as substitute of organic hole transport layer and CZTSe as the most adequate materials for enhancing both efficiency and stability owing to minimal lattice mismatching, easy synthesis, efficient charge transport characteristics and superior chemical stability. Serval metallic materials like Cu, Fe, C, W, Ni and Pd are used as back contacts, are also examined with an aim of replacing the expensive Au and it is found that the proposed structure offers highest efficiency with Pd i.e., 31.60% (Voc = 1.13 V, Jsc = 32.94 mA/cm2 and FF = 84.55%). Additionally, the effect of defects density of absorber and temperature on device performance are also analysed and observed both factors adversely affects device performance. So, their values kept minimum for achieving optimal efficiency. The simulated results also illustrated in J-V and quantum efficiency (QE) curves. These optimised results obtained in present study are also compared with previously reported results. The results extracted from this simulation may play a potent role in the development of eco-friendly and efficient solar technology.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spectroscopic characteristics and radiative parameters of Er+3 doped ternary lead bismuth tellurite glass: Judd–Ofelt analysis 掺杂 Er+3 的三元铅铋碲玻璃的光谱特性和辐射参数：贾德-奥菲尔特分析

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2024-11-20 DOI: 10.1007/s11082-024-07109-9

Ahmed A. Ahmed, Saman Q. Mawlud

{"title":"Spectroscopic characteristics and radiative parameters of Er+3 doped ternary lead bismuth tellurite glass: Judd–Ofelt analysis","authors":"Ahmed A. Ahmed, Saman Q. Mawlud","doi":"10.1007/s11082-024-07109-9","DOIUrl":"10.1007/s11082-024-07109-9","url":null,"abstract":"<div>Melt quenching was utilized to produce Er+3-doped lead–bismuth tellurite glasses with the following composition: (75-x) TeO2–15 PbO–10 Bi2O3–xEr2O3, where x = 0, 0.5, 1, 1.5, 2, and 2.5 mol%. The impact of Er3+ doping was assessed by analyzing its optical and physical properties. Using XRD, the non-crystalline character of the materials was determined. The density of the samples was increased from 6.387 to 6.528 g.cm−3. The absorption spectra show eight transition bands corresponding to the transitions from 4I15/2 to 4I13/2, 4I11/2, 4I9/2, 4F9/2, 4S3/2, 2H11/2, 4F7/2 and 4F5/2, respectively. Judd–Ofelt theory was utilized to compute both the experimental and calculated oscillator strengths. The trends of the intensity parameters are as follows: Ω2 > Ω6 > Ω4. A total of three emission bands were detected in the spectrum of fluorescence. The green transition 4S3/2 → 4I15/2 is the strongest among other transitions. To ascertain the color coordinates, the CIE 1931 chromaticity diagram was applied. 95.11% was the maximum quantum efficiency for the transition 4S3/2 → 4I15/2. The findings indicate that TPBE2 glass exhibits considerable potential as a material for photonic applications and the production of laser optical systems.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Enhancement of MAPb0.75Sn0.25I3 solar cell efficiency by doping HTL and ETL layers 通过掺杂 HTL 和 ETL 层提高 MAPb0.75Sn0.25I3 太阳能电池的效率

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2024-11-20 DOI: 10.1007/s11082-024-07812-7

Doua Abdallaoui, Afak Meftah, Nouredine Sengouga, Maroua Abdallaoui, Madani Labed

引用次数: 0

Retraction Note: Quantum computing in photonic integrated circuit smart data analysis using deep learning in healthcare and sports 撤稿说明：光子集成电路中的量子计算在医疗保健和体育领域利用深度学习进行智能数据分析

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2024-11-20 DOI: 10.1007/s11082-024-07915-1

Wang Ju

引用次数: 0

Solar thermal application and optimization of a staircase-shaped resonator broadband solar absorber 阶梯形谐振器宽带太阳能吸收器的太阳能热应用和优化

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2024-11-20 DOI: 10.1007/s11082-024-07623-w

Meshari Alsharari, Jonas Muheki, Jaymit Surve, Ammar Armghan, Khaled Aliqab, Shobhit K. Patel

{"title":"Solar thermal application and optimization of a staircase-shaped resonator broadband solar absorber","authors":"Meshari Alsharari, Jonas Muheki, Jaymit Surve, Ammar Armghan, Khaled Aliqab, Shobhit K. Patel","doi":"10.1007/s11082-024-07623-w","DOIUrl":"10.1007/s11082-024-07623-w","url":null,"abstract":"<div>The development of efficient energy absorbers is essential for optimizing solar energy utilization, particularly for applications such as thermophotovoltaics and other solar energy harvesting technologies. Current research typically focuses on improving the efficiency of the solar absorbers with low-cost materials. This study addresses this limitation by introducing a broadband solar absorber with a staircase-shaped resonator structure. The absorber employs tungsten as the substrate due to its high thermal conductivity and stability, with a GaInAsP layer forming the staircase resonator. Simulations using finite element methods demonstrate that the proposed two-layered structure achieves over 90% absorption within the 200–3000 nm wavelength range, including ultraviolet and visible spectra. This broad absorption range maximizes solar energy capture and conversion efficiency. A parametric examination demonstrates how geometric factors like substrate depth and resonator dimensions affect the absorption effectiveness. The unique staircase shape of the resonator enhances light trapping and absorption across the full spectrum. Under real-world conditions, the absorber effectively captures solar energy across various angles and polarizations. These findings contribute to the advancement of energy absorber design and offer insights for future innovations in solar energy harvesting.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

DFT study of elastic, structural, and optical properties of K2InAgZ6 (Z = Cl, Br, I) perovskites: potential for optoelectronic applications K2InAgZ6（Z = Cl、Br、I）包晶的弹性、结构和光学特性的 DFT 研究：光电应用潜力

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2024-11-20 DOI: 10.1007/s11082-024-07769-7

Sohail Ahmad, Muhammad Zakria, Khalid M. Alotaibi, Tabasum Huma, Nadimullah Hakimi, Rawaid Ali, Qasimullah, Akif Safeen, Jing Feng, Syed Hatim Shah

{"title":"DFT study of elastic, structural, and optical properties of K2InAgZ6 (Z = Cl, Br, I) perovskites: potential for optoelectronic applications","authors":"Sohail Ahmad, Muhammad Zakria, Khalid M. Alotaibi, Tabasum Huma, Nadimullah Hakimi, Rawaid Ali,  Qasimullah, Akif Safeen, Jing Feng, Syed Hatim Shah","doi":"10.1007/s11082-024-07769-7","DOIUrl":"10.1007/s11082-024-07769-7","url":null,"abstract":"<div>In this article, a comprehensive research was carried out to investigate the elastic, structural, and optoelectronic properties of double perovskite compounds K2InAgCl6, K2InAgBr6, and K2InAgI6 by using density functional theory. Goldsmith’s tolerance factor (tG), whose values are near to unity, was used to assess the structural stability of the cubic perovskite structure. According to the analysis of electronic characteristic, K2InAgCl6, K2InAgBr6, and K2InAgI6 are semiconductors with a tiny band gap, calculated using the mBJ-PBE sol potential with band gap values of 2.48 eV, 1.47 eV, and 0.23 eV, respectively. A comprehensive analysis of the optical characteristics of these compounds was conducted across an energy range from 0 to 10 eV. The results revealed that K2InAgCl6, K2InAgBr6, and K2InAgI6 exhibit significant conductivity and absorbance properties in wide energy ranges, which is confirmed by density of states analysis. Moreover, the optical characteristics shows that lower photon energy relates to high optical transmission, while higher energies result in more optical absorption of material. These results demonstrate that K2InAgCl6, K2InAgBr6, and K2InAgI6 are viable material candidates for use in high-frequency UV optical devices.</div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Retraction Note: High performance reconciliation for practical quantum key distribution systems 撤稿说明：实用量子密钥分发系统的高性能调和

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2024-11-20 DOI: 10.1007/s11082-024-07829-y

ao-Kun Mao, Qiong Li, Peng-Lei Hao, Bassem Abd-El-Atty, Abdullah M. Iliyasu

引用次数: 0

An investigation on spectroscopic, linear and nonlinear optical parameters of a potential NLO compound 一种潜在 NLO 化合物的光谱、线性和非线性光学参数研究

IF 3.3 3区工程技术

Optical and Quantum Electronics Pub Date : 2024-11-20 DOI: 10.1007/s11082-024-06915-5

Adil Başoğlu, Nazmiye Öner, Davut Avcı, Ömer Tamer, Yusuf Atalay

{"title":"An investigation on spectroscopic, linear and nonlinear optical parameters of a potential NLO compound","authors":"Adil Başoğlu, Nazmiye Öner, Davut Avcı, Ömer Tamer, Yusuf Atalay","doi":"10.1007/s11082-024-06915-5","DOIUrl":"10.1007/s11082-024-06915-5","url":null,"abstract":"<div>In this study, the theoretical calculations on 2-[2-(2,4-dimethoxy-phenyl)-vinyl]-1-ethyl-pyridinium iodide (DMPI), which was previously synthesized and experimentally examined, were performed and compared with the corresponding experimental results. The optimized geometrical parameters, vibrational frequencies, 1H and 13C-NMR chemical shifts, HOMO-LUMO and the optical band gap energies of DMPI compound were obtained theoretically by using B3LYP and HSEh1PBE methods with LANL2DZ basis set. The other important optical properties such as refractive index, extinction coefficient, conductivity, dielectric constant, VELF and SELF were investigated using experimental and theoretical spectra. The dipole moment, the mean polarizability, the third-order susceptibility, first and second-order hyperpolarizabilities and nonlinear refractive index parameters were also computed at HSEh1PBE/LANL2DZ and B3LYP/LANL2DZ levels respectively. According to the values of theoretical NLO parameters, DMPI compound indicates high NLO efficiency, as expressed in the experimental study. Hence DMPI appears to be a promising candidate for electro-optic, photonic and NLO applications.<h3>Graphical abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142672402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0