Machine-learning driven approach for exploration of properties of antimony chalcogenide perovskite based double absorber with back surface field layer

IF 4 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Harshit Saxena, Jaspinder Kaur, Rikmantra Basu, Ajay Kumar Sharma, Jaya Madan, Rahul Pandey
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引用次数: 0

Abstract

To address the toxicity and stability concerns of lead-based perovskites, this study investigates a lead-free, antimony chalcogenide-based double-absorber solar cell with the structure WSe2/Sb2S3/Sb2Se3/WS2. Numerical simulations were performed using SCAPS-1D, followed by machine learning-based efficiency prediction using Support Vector Regression (SVR), Random Forest (RF), Stacked SVR + RF, and Extreme Gradient Boosting (XGBoost). The optimized configuration, with 0.2 µm Sb2S3 (shallow acceptor density: 1016 cm−3), 0.8 µm Sb2Se3 (shallow donor density: 1019 cm−3), achieved a power conversion efficiency (PCE) of 28.39%, VOC of 0.97 V, JSC of 33.32 mA/cm2, and fill factor of 87.91%. All layers were modelled with a bulk defect density of 1015 cm−3 and an interfacial defect density of 1010 cm−2. Among the ML models, XGBoost demonstrated the best performance with an MSE of approximately 0.003 and R2 of 0.9996. SHAP analysis identified Sb2Se3 donor concentration as the most impactful feature, while Sb2S3 thickness had the least effect. This study showcases the potential of combining SCAPS-1D simulation with interpretable ML models for accelerated design and optimization of lead-free solar cells.

基于机器学习的后表面场层硫系锑钙钛矿双吸收剂性能研究
为了解决铅基钙钛矿的毒性和稳定性问题,本研究研究了一种结构为WSe2/Sb2S3/Sb2Se3/WS2的无铅、锑硫系双吸收体太阳能电池。使用SCAPS-1D进行数值模拟,然后使用支持向量回归(SVR)、随机森林(RF)、堆叠SVR + RF和极端梯度增强(XGBoost)进行基于机器学习的效率预测。优化后的结构为0.2µm Sb2S3(浅受体密度:1016 cm−3)、0.8µm Sb2Se3(浅给体密度:1019 cm−3),功率转换效率(PCE)为28.39%,VOC为0.97 V, JSC为33.32 mA/cm2,填充系数为87.91%。所有层的总体缺陷密度为1015 cm−3,界面缺陷密度为1010 cm−2。在ML模型中,XGBoost表现出最好的性能,MSE约为0.003,R2为0.9996。SHAP分析发现,Sb2Se3供体浓度是影响最大的特征,而Sb2S3厚度的影响最小。这项研究展示了将SCAPS-1D模拟与可解释的ML模型相结合的潜力,以加速无铅太阳能电池的设计和优化。
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来源期刊
Optical and Quantum Electronics
Optical and Quantum Electronics 工程技术-工程:电子与电气
CiteScore
4.60
自引率
20.00%
发文量
810
审稿时长
3.8 months
期刊介绍: Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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