{"title":"Machine-learning driven approach for exploration of properties of antimony chalcogenide perovskite based double absorber with back surface field layer","authors":"Harshit Saxena, Jaspinder Kaur, Rikmantra Basu, Ajay Kumar Sharma, Jaya Madan, Rahul Pandey","doi":"10.1007/s11082-025-08489-2","DOIUrl":null,"url":null,"abstract":"<div><p>To address the toxicity and stability concerns of lead-based perovskites, this study investigates a lead-free, antimony chalcogenide-based double-absorber solar cell with the structure WSe<sub>2</sub>/Sb<sub>2</sub>S<sub>3</sub>/Sb<sub>2</sub>Se<sub>3</sub>/WS<sub>2</sub>. Numerical simulations were performed using SCAPS-1D, followed by machine learning-based efficiency prediction using Support Vector Regression (SVR), Random Forest (RF), Stacked SVR + RF, and Extreme Gradient Boosting (XGBoost). The optimized configuration, with 0.2 µm Sb<sub>2</sub>S<sub>3</sub> (shallow acceptor density: 10<sup>16</sup> cm<sup>−3</sup>), 0.8 µm Sb<sub>2</sub>Se<sub>3</sub> (shallow donor density: 10<sup>19</sup> cm<sup>−3</sup>), achieved a power conversion efficiency (PCE) of 28.39%, V<sub>OC</sub> of 0.97 V, J<sub>SC</sub> of 33.32 mA/cm<sup>2</sup>, and fill factor of 87.91%. All layers were modelled with a bulk defect density of 10<sup>15</sup> cm<sup>−3</sup> and an interfacial defect density of 10<sup>10</sup> cm<sup>−2</sup>. Among the ML models, XGBoost demonstrated the best performance with an MSE of approximately 0.003 and R<sup>2</sup> of 0.9996. SHAP analysis identified Sb<sub>2</sub>Se<sub>3</sub> donor concentration as the most impactful feature, while Sb<sub>2</sub>S<sub>3</sub> thickness had the least effect. This study showcases the potential of combining SCAPS-1D simulation with interpretable ML models for accelerated design and optimization of lead-free solar cells.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 10","pages":""},"PeriodicalIF":4.0000,"publicationDate":"2025-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08489-2","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
To address the toxicity and stability concerns of lead-based perovskites, this study investigates a lead-free, antimony chalcogenide-based double-absorber solar cell with the structure WSe2/Sb2S3/Sb2Se3/WS2. Numerical simulations were performed using SCAPS-1D, followed by machine learning-based efficiency prediction using Support Vector Regression (SVR), Random Forest (RF), Stacked SVR + RF, and Extreme Gradient Boosting (XGBoost). The optimized configuration, with 0.2 µm Sb2S3 (shallow acceptor density: 1016 cm−3), 0.8 µm Sb2Se3 (shallow donor density: 1019 cm−3), achieved a power conversion efficiency (PCE) of 28.39%, VOC of 0.97 V, JSC of 33.32 mA/cm2, and fill factor of 87.91%. All layers were modelled with a bulk defect density of 1015 cm−3 and an interfacial defect density of 1010 cm−2. Among the ML models, XGBoost demonstrated the best performance with an MSE of approximately 0.003 and R2 of 0.9996. SHAP analysis identified Sb2Se3 donor concentration as the most impactful feature, while Sb2S3 thickness had the least effect. This study showcases the potential of combining SCAPS-1D simulation with interpretable ML models for accelerated design and optimization of lead-free solar cells.
期刊介绍:
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.