An extensive study on multiple ETL layers to design and simulation of high-performance Ag2MgSnSe4-based chalcogenide solar cells for photovoltaic applications

This paper presents the results of a numerical simulation analysis conducted using the SCAPS-1D modelling tool on Ag₂MgSnSe₄ solar cells, a novel quaternary chalcogenide material. The effects of the absorber layer’s thickness, doping density, defect density, and mobility on device performance have been thoroughly investigated and modified in this work. Here, aluminium and nickel make up the front and back contacts, respectively, and tin disulphide, tungsten disulphide, zinc oxide, and PCBM make up the electron transport layers. Cu₂O is the HTL. Quantum efficiency (QE), generation-recombination rates, current-voltage density (J-V), capacitance, temperature, series and shunt resistances, and Mott-Schottky characteristics are the many other parameters studied. Cu₂O was shown to be the most effective HTL for Ag₂MgSnSe₄ out of the four ETLs used in this investigation. So, for SnS₂, WS₂, ZnO, and PCBM, the resulting power conversion efficiencies (PCEs) were 26.36%, 25.86%, 25.84%, and 25.80%, respectively. Solar cell designs based on quaternary chalcogenides may be optimized using the suggested technique.