Power-dependent photoluminescence enhancement in Ni, Cu, and Co-doped ZnO nanoparticles for optoelectronic device applications

IF 4 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2025-09-16 DOI:10.1007/s11082-025-08336-4

Imen Ben Elkamel, Nejeh Hamdaoui, Amine Mezni, Ridha Ajjel, Lotfi Beji

{"title":"Power-dependent photoluminescence enhancement in Ni, Cu, and Co-doped ZnO nanoparticles for optoelectronic device applications","authors":"Imen Ben Elkamel, Nejeh Hamdaoui, Amine Mezni, Ridha Ajjel, Lotfi Beji","doi":"10.1007/s11082-025-08336-4","DOIUrl":null,"url":null,"abstract":"<div><p>The photoluminescence properties of doped zinc oxide (ZnO) nanoparticles have attracted significant attention due to their potential for various optoelectronic applications. Doping ZnO with specific impurities offers a powerful approach to improve its luminescent behavior. In this study, we present a comprehensive investigation of the photoluminescence characteristics of doped ZnO nanoparticles under varying power levels. Our experimental results reveal a remarkable enhancement in the photoluminescence emission intensity with increasing power levels, so the intensity of the PL peak at 400 nm increased by 45% with Ni doping compared to undoped ZnO demonstrating the potential of doped ZnO nanoparticles for high-power optoelectronic devices. The enhancement was found to be power-dependent, with the highest intensity observed at 60 mW excitation power. Moreover, we identify the key factors responsible for this enhancement and propose a novel approach to further optimize the photoluminescence performance.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 10","pages":""},"PeriodicalIF":4.0000,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08336-4","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

The photoluminescence properties of doped zinc oxide (ZnO) nanoparticles have attracted significant attention due to their potential for various optoelectronic applications. Doping ZnO with specific impurities offers a powerful approach to improve its luminescent behavior. In this study, we present a comprehensive investigation of the photoluminescence characteristics of doped ZnO nanoparticles under varying power levels. Our experimental results reveal a remarkable enhancement in the photoluminescence emission intensity with increasing power levels, so the intensity of the PL peak at 400 nm increased by 45% with Ni doping compared to undoped ZnO demonstrating the potential of doped ZnO nanoparticles for high-power optoelectronic devices. The enhancement was found to be power-dependent, with the highest intensity observed at 60 mW excitation power. Moreover, we identify the key factors responsible for this enhancement and propose a novel approach to further optimize the photoluminescence performance.

Abstract Image

查看原文本刊更多论文

Ni， Cu和共掺杂ZnO纳米颗粒在光电器件应用中的功率依赖性光致发光增强

摘要掺杂氧化锌纳米粒子的光致发光特性因其在光电子领域的广泛应用而备受关注。掺杂特定杂质的氧化锌是改善其发光性能的有效途径。在本研究中，我们全面研究了掺杂ZnO纳米颗粒在不同功率水平下的光致发光特性。我们的实验结果显示，随着功率水平的增加，光致发光发射强度显著增强，因此与未掺杂ZnO相比，掺杂Ni的400 nm处PL峰强度增加了45%，这表明掺杂ZnO纳米粒子在高功率光电器件中的潜力。发现这种增强与功率有关，在60 mW激发功率时观察到的强度最高。此外，我们确定了这种增强的关键因素，并提出了一种进一步优化光致发光性能的新方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.