Numerical study of KSnI3-based perovskite solar cell through a comparison of hole transport layers by SCAPS-1D

IF 4 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Optical and Quantum Electronics Pub Date : 2025-09-15 DOI:10.1007/s11082-025-08431-6

Nahid-Al Mahmud, Farhana Bari Sumona, Muhammad Kashif, Taufiqul Bari Tuhin, Sobhy M. Ibrahim, Md Ferdous Rahman, Abdul Wahed

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Abstract

The incorporation of toxic lead obstructs the development and commercialization of perovskite solar cells. A numerical simulation is carried out in the current work to investigate non-toxic KSnI₃-based photovoltaic device with STO (Selenium tin oxide) as electron transport layer. A comparison was made between two-hole transport layers (Cu₂O and NiO) to determine the highest power conversion efficiency (PCE). At the initial stage the power conversion efficiency for NiO and Cu₂O are 15.59%, and 16.52%, respectively. The solar cell capacitance simulator in one dimensional (SCAPS-1D) has been used to design FTO/STO/KSnI₃/HTLs/Ag structure. The best results are obtained using Cu₂O as HTL, with a 650 nm thickness of absorber, a shallow donor concentration of 10¹⁷ cm⁻³, absorber defect density 10¹² cm⁻³, ETL thickness 10 nm, operating temperature of 340 K, and Ni as a back contact. Therefore, the FTO/STO/KSnI₃/Cu₂O/Ni configuration in the study represents the highest-performance of perovskite solar cell design. The optimized device exhibited PCE = 23.91%, FF = 86.59%, J_sc = 16.945 mA/cm², and V_oc = 1.629 V. The behavior of generation and recombination in the system have been investigated. Additionally, current density–voltage (J–V) characteristics, quantum efficiency (Q-E), and capacitance–voltage (C–V) measurements have been analyzed to investigate the device's electrical properties. This study offers an effective and dependable approach for achieving significant efficiency in perovskite solar cells.

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利用SCAPS-1D对ksni3基钙钛矿太阳能电池空穴传输层的比较进行数值研究

有毒铅的掺入阻碍了钙钛矿太阳能电池的发展和商业化。本文采用数值模拟的方法研究了以氧化硒锡为电子传输层的无毒ksni3基光伏器件。比较了两孔传输层（Cu2O和NiO）的最高功率转换效率（PCE）。在初始阶段，NiO和Cu2O的功率转换效率分别为15.59%和16.52%。利用一维太阳能电池电容模拟器（SCAPS-1D）设计了FTO/STO/KSnI3/HTLs/Ag结构。以Cu2O为HTL，吸收剂厚度650 nm，浅层供体浓度1017 cm - 3，吸收剂缺陷密度1012 cm - 3， ETL厚度10 nm，工作温度340 K，镍为背触点，效果最好。因此，本研究中的FTO/STO/KSnI3/Cu2O/Ni结构代表了钙钛矿太阳能电池设计的最高性能。优化后的器件PCE = 23.91%, FF = 86.59%, Jsc = 16.945 mA/cm2, Voc = 1.629 V。研究了该体系的生成和复合行为。此外，还分析了电流密度-电压（J-V）特性、量子效率（Q-E）和电容-电压（C-V）测量结果，以研究该器件的电学特性。这项研究为实现钙钛矿太阳能电池的显著效率提供了一种有效和可靠的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Optical and Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.60

自引率

20.00%

发文量

810

审稿时长

3.8 months

期刊介绍： Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest. Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.