Nahid-Al Mahmud, Farhana Bari Sumona, Muhammad Kashif, Taufiqul Bari Tuhin, Sobhy M. Ibrahim, Md Ferdous Rahman, Abdul Wahed
{"title":"利用SCAPS-1D对ksni3基钙钛矿太阳能电池空穴传输层的比较进行数值研究","authors":"Nahid-Al Mahmud, Farhana Bari Sumona, Muhammad Kashif, Taufiqul Bari Tuhin, Sobhy M. Ibrahim, Md Ferdous Rahman, Abdul Wahed","doi":"10.1007/s11082-025-08431-6","DOIUrl":null,"url":null,"abstract":"<div><p>The incorporation of toxic lead obstructs the development and commercialization of perovskite solar cells. A numerical simulation is carried out in the current work to investigate non-toxic KSnI<sub>3</sub>-based photovoltaic device with STO (Selenium tin oxide) as electron transport layer. A comparison was made between two-hole transport layers (Cu<sub>2</sub>O and NiO) to determine the highest power conversion efficiency (PCE). At the initial stage the power conversion efficiency for NiO and Cu<sub>2</sub>O are 15.59%, and 16.52%, respectively. The solar cell capacitance simulator in one dimensional (SCAPS-1D) has been used to design FTO/STO/KSnI<sub>3</sub>/HTLs/Ag structure. The best results are obtained using Cu<sub>2</sub>O as HTL, with a 650 nm thickness of absorber, a shallow donor concentration of 10<sup>17</sup> cm⁻<sup>3</sup>, absorber defect density 10<sup>12</sup> cm<sup>−3</sup>, ETL thickness 10 nm, operating temperature of 340 K, and Ni as a back contact. Therefore, the FTO/STO/KSnI<sub>3</sub>/Cu<sub>2</sub>O/Ni configuration in the study represents the highest-performance of perovskite solar cell design. The optimized device exhibited PCE = 23.91%, FF = 86.59%, J<sub>sc</sub> = 16.945 mA/cm<sup>2</sup>, and V<sub>oc</sub> = 1.629 V. The behavior of generation and recombination in the system have been investigated. Additionally, current density–voltage (J–V) characteristics, quantum efficiency (Q-E), and capacitance–voltage (C–V) measurements have been analyzed to investigate the device's electrical properties. This study offers an effective and dependable approach for achieving significant efficiency in perovskite solar cells.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 9","pages":""},"PeriodicalIF":4.0000,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Numerical study of KSnI3-based perovskite solar cell through a comparison of hole transport layers by SCAPS-1D\",\"authors\":\"Nahid-Al Mahmud, Farhana Bari Sumona, Muhammad Kashif, Taufiqul Bari Tuhin, Sobhy M. Ibrahim, Md Ferdous Rahman, Abdul Wahed\",\"doi\":\"10.1007/s11082-025-08431-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The incorporation of toxic lead obstructs the development and commercialization of perovskite solar cells. A numerical simulation is carried out in the current work to investigate non-toxic KSnI<sub>3</sub>-based photovoltaic device with STO (Selenium tin oxide) as electron transport layer. A comparison was made between two-hole transport layers (Cu<sub>2</sub>O and NiO) to determine the highest power conversion efficiency (PCE). At the initial stage the power conversion efficiency for NiO and Cu<sub>2</sub>O are 15.59%, and 16.52%, respectively. The solar cell capacitance simulator in one dimensional (SCAPS-1D) has been used to design FTO/STO/KSnI<sub>3</sub>/HTLs/Ag structure. The best results are obtained using Cu<sub>2</sub>O as HTL, with a 650 nm thickness of absorber, a shallow donor concentration of 10<sup>17</sup> cm⁻<sup>3</sup>, absorber defect density 10<sup>12</sup> cm<sup>−3</sup>, ETL thickness 10 nm, operating temperature of 340 K, and Ni as a back contact. Therefore, the FTO/STO/KSnI<sub>3</sub>/Cu<sub>2</sub>O/Ni configuration in the study represents the highest-performance of perovskite solar cell design. The optimized device exhibited PCE = 23.91%, FF = 86.59%, J<sub>sc</sub> = 16.945 mA/cm<sup>2</sup>, and V<sub>oc</sub> = 1.629 V. The behavior of generation and recombination in the system have been investigated. Additionally, current density–voltage (J–V) characteristics, quantum efficiency (Q-E), and capacitance–voltage (C–V) measurements have been analyzed to investigate the device's electrical properties. This study offers an effective and dependable approach for achieving significant efficiency in perovskite solar cells.</p></div>\",\"PeriodicalId\":720,\"journal\":{\"name\":\"Optical and Quantum Electronics\",\"volume\":\"57 9\",\"pages\":\"\"},\"PeriodicalIF\":4.0000,\"publicationDate\":\"2025-09-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Optical and Quantum Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11082-025-08431-6\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-025-08431-6","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Numerical study of KSnI3-based perovskite solar cell through a comparison of hole transport layers by SCAPS-1D
The incorporation of toxic lead obstructs the development and commercialization of perovskite solar cells. A numerical simulation is carried out in the current work to investigate non-toxic KSnI3-based photovoltaic device with STO (Selenium tin oxide) as electron transport layer. A comparison was made between two-hole transport layers (Cu2O and NiO) to determine the highest power conversion efficiency (PCE). At the initial stage the power conversion efficiency for NiO and Cu2O are 15.59%, and 16.52%, respectively. The solar cell capacitance simulator in one dimensional (SCAPS-1D) has been used to design FTO/STO/KSnI3/HTLs/Ag structure. The best results are obtained using Cu2O as HTL, with a 650 nm thickness of absorber, a shallow donor concentration of 1017 cm⁻3, absorber defect density 1012 cm−3, ETL thickness 10 nm, operating temperature of 340 K, and Ni as a back contact. Therefore, the FTO/STO/KSnI3/Cu2O/Ni configuration in the study represents the highest-performance of perovskite solar cell design. The optimized device exhibited PCE = 23.91%, FF = 86.59%, Jsc = 16.945 mA/cm2, and Voc = 1.629 V. The behavior of generation and recombination in the system have been investigated. Additionally, current density–voltage (J–V) characteristics, quantum efficiency (Q-E), and capacitance–voltage (C–V) measurements have been analyzed to investigate the device's electrical properties. This study offers an effective and dependable approach for achieving significant efficiency in perovskite solar cells.
期刊介绍：
Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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