Power-dependent photoluminescence enhancement in Ni, Cu, and Co-doped ZnO nanoparticles for optoelectronic device applications

The photoluminescence properties of doped zinc oxide (ZnO) nanoparticles have attracted significant attention due to their potential for various optoelectronic applications. Doping ZnO with specific impurities offers a powerful approach to improve its luminescent behavior. In this study, we present a comprehensive investigation of the photoluminescence characteristics of doped ZnO nanoparticles under varying power levels. Our experimental results reveal a remarkable enhancement in the photoluminescence emission intensity with increasing power levels, so the intensity of the PL peak at 400 nm increased by 45% with Ni doping compared to undoped ZnO demonstrating the potential of doped ZnO nanoparticles for high-power optoelectronic devices. The enhancement was found to be power-dependent, with the highest intensity observed at 60 mW excitation power. Moreover, we identify the key factors responsible for this enhancement and propose a novel approach to further optimize the photoluminescence performance.