Optical and Quantum Electronics最新文献

{"title":"Modeling the impact of short-channel effects on double-gate MgZnO/ZnO HEMTs: a numerical approach","authors":"K. Vinothkumar,&nbsp;A. Kaleel Rahuman","doi":"10.1007/s11082-025-08104-4","DOIUrl":"10.1007/s11082-025-08104-4","url":null,"abstract":"<div><p>The MgZnO/ZnO High Electron Mobility Transistor technology plays a vital role in radio frequency and high switching power applications. In this work, an analytical model for Double-Gate(DG) MgZnO/ZnO HEMTs is proposed to enhance carrier transport efficiency while significantly mitigating short-channel effects. The proposed DG-MgZnO/ZnO HEMT model estimates critical parameters, such as surface potential, drain-current <span>({(I}_{d}))</span>, electric field <span>({(E}_{f})</span>), and threshold voltage <span>({(V}_{th})</span>) for both bind and segregated gate bias voltage conditions using the variable separation method. The lateral electric field and channel potential for the front and rear gate heterointerfaces are derived using simplified analytical equations, with the results verified through simulations using the Sentaurus TCAD device simulator.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 3","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143583640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optimizing radiation shielding competence of AB2(PO3)5 [A = K, Rb, Cs; B = Pb, Ba] polyphosphates: Hirshfeld geometries tuning","authors":"Z. Y. Khattari,&nbsp;Y. N. Zhuravlev","doi":"10.1007/s11082-025-08113-3","DOIUrl":"10.1007/s11082-025-08113-3","url":null,"abstract":"<div><p>Five distinct polyphosphate compounds-KPb₂(PO₃)₅, RbPb₂(PO₃)₅, CsPb₂(PO₃)₅, KBa₂(PO₃)₅, and RbBa₂(PO₃)₅-previously studied for nonlinear optical applications, are explored for their effectiveness in against possible ionizing radiation. The examination covers MAC and LAC in the range 0.015 &lt; E &lt; 15.0 MeV via online data-base X-COM analysis. This study integrates insights from Hirshfeld surface analysis, shedding light on the intermolecular interactions and topological features influencing radiation shielding properties. The findings reveal distinct trends in MAC and LAC in the studied γ-rays energies, with KBa₂(PO₃)₅ (0.03 &lt; MAC &lt; 5507 cm²/g, 0.11 &lt; LAC &lt; 1141 1/cm) emerging as a particularly efficient γ-ray attenuator. Comparison with SiO₂ (0.02 &lt; MAC &lt; 5.81 cm²/g, 0.05 &lt; LAC &lt; 12.82 1/cm) underscores superiority against radiation of polyphosphate crystals. Moreover, the influence interatomic interactions on shielding effectiveness via Hirshfeld analysis are explored with O…O of 41%, and O…A (A = Pb, Ba) as 31.1% for Cs…O, 25.8% for P…O, 14.1% for K…O, 29.9% for Pb…O contribute mostly to the MAC and LAC values. The study introduces an innovative approach, combining Hirshfeld topological surfaces ∈ [328.1, 338.6] Ų, and volumes ∈ [307.3, 315.5] ų, with void surface ∈ [368.1, 373.4] Ų, and volume ∈ [483.9, 496.3] ų analysis, aiming to optimize polyphosphate crystals for enhanced radiation shielding efficacy. The insights presented a possible application of these crystals, ranging from nonlinear optics to γ-radiation defenses.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 3","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143583642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Design of an ultra-compact As2Se3 waveguide for enhanced optical frequency comb generation","authors":"Mohammad Javad Pournaghdi,&nbsp;Mohammad Reza Alizadeh,&nbsp;Saeed Olyaee,&nbsp;Mahmood Seifouri","doi":"10.1007/s11082-025-08117-z","DOIUrl":"10.1007/s11082-025-08117-z","url":null,"abstract":"<div><p>This study introduces a waveguide design capable of generating supercontinuum spectrum and frequency combs within the mid-infrared range. The proposed structure consists of an As₂Se₃ core and cladding layers of MgF₂ and SiO₂, exhibiting two zero-dispersion wavelengths at 2100 nm and 2850 nm. Theoretical modeling and numerical simulations demonstrate the generation of a supercontinuum spanning a wavelength range of 4500 nm, from 1000 to 5500 nm, at a − 30 dB level, as well as frequency combs featuring up to 44 comb lines with a flatness of 15 dBm. The supercontinuum was generated in the maximum range of 30 dB using a 1 kW input pulse and 1 and 4 mm long waveguides. The generated frequency combs cover the wavelength range of 2073.1–2159.8 nm, making them suitable for applications such as gas sensing, industrial process monitoring, and medical diagnostics. The proposed waveguide design offers advantages over existing methods in terms of the number of comb lines, flatness, and effective area while operating in the mid-infrared region.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 3","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143583398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photonic generation of multi-format and reconfigurable microwave signals based on cascaded external modulation","authors":"Mo Chen,&nbsp;Hongyao Chen,&nbsp;HongYu Zhang,&nbsp;ZhuoYang Li,&nbsp;Jianping Wang,&nbsp;LiFang Feng,&nbsp;HuiMin Lu","doi":"10.1007/s11082-025-08080-9","DOIUrl":"10.1007/s11082-025-08080-9","url":null,"abstract":"<div><p>This paper presents a photonic scheme for generating multi-format, multi-band, and reconfigurable microwave photonic signals through cascaded external modulation. The proposed system utilize dual-parallel Mach–Zehnder modulators (DP-MZM) and Mach–Zehnder modulators (MZM) to produce high-order optical sidebands, enabling flexible frequency multiplication factors switching and pulse waveform reconstruction. Additionally, using a polarization control structure allows for spurious suppression and encoded signal loading. The system can generate various signal formats, including rectangular optical frequency combs, frequency-multiplied signals, dual-frequency encoded signals, and multiple pulse waveforms. Simulation results demonstrate the successful generation of 16 GHz frequency-doubled signal and 32 GHz frequency-quadrupled signal, with spurious suppression ratios of 37.9 dB and 44.8 dB, respectively. It can also generate four-line rectangular optical frequency combs with frequency multiplication factors of 2 and 4, achieving flatness values of 0.24 dB and 0.16 dB. Furthermore, the system can generate symmetric triangular pulses and Sinc-Nyquist pulses with adjustable repetition frequencies, as well as encoded signals with good pulse compression performance, having PCR values close to the theoretical value of 13. This work demonstrates a versatile and reconfigurable approach to microwave photonic signal generation, offering promising applications in advanced radar systems.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 3","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143583547","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mid-infrared supercontinuum generation using pure quartic soliton in single material photonic crystal fiber","authors":"Shah Md. Salimullah,&nbsp;Mohammad Faisal","doi":"10.1007/s11082-025-08116-0","DOIUrl":"10.1007/s11082-025-08116-0","url":null,"abstract":"<div><p>We propose a single material photonic crystal fiber (SM-PCF) for mid-infrared supercontinuum generation (MISG) using pure quartic soliton (PQS) for the first time. We have designed a SM-PCF considering fabrication tolerances, displaying a negative fourth-order dispersion of − 0.0028 ps⁴km⁻¹ that meet requirements of PQS formation. Our presented SM-PCF facilitates the generation of PQS for 72 fs input pulse and 0.01664 W peak power at 2375 nm. The nonlinearity is obtained as high as 6250 W⁻¹ km⁻¹. Furthermore, we explore PQS based MISG (the spectrum spans from 1985 to 2990 nm) through 10 m long proposed fiber. Moreover, we analyze the impact of three different noises on the coherence of MISG. To the best of our knowledge, PQS based MISG has not yet been proposed which will offer promising potential in ultrafast laser science.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 3","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143583545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Facile solid state synthesis of lead free FA3Bi2I9 perovskite and extensive analysis of optoelectronic properties at room temperature","authors":"Saranya Kumaresan,&nbsp;Khaja Moiduddin,&nbsp;Zeyad Almutairi,&nbsp;Naidu Dhanpal Jayram,&nbsp;Janarthanan Balasundharam,&nbsp;Syed Hammad Mian","doi":"10.1007/s11082-025-08100-8","DOIUrl":"10.1007/s11082-025-08100-8","url":null,"abstract":"<div><p>Lead free perovskite materials are attractive due to non-toxicity and the chemical stability. Therefore Tin, Germanium, Bismuth and Antimony are promising alternatives for lead. Among these Bismuth is promising candidate due to it exhibits similar optical and electrical properties of lead. Herein we fabricated lead free Formamidinium Bismuth Iodide FA₃Bi₂I₉ powder by solid state method at room temperature. The perovskite crystal structure is confirmed via XRD analysis. The surface morphology and temperature sustainability of perovskite powder is investigated. The optical studies of perovskite powder are examined and inferred with a wide UV–Visible absorption spectrum from 350 to 600 nm. The band gap and photo emission wavelength for FA₃Bi₂I₉ perovskite powder are found to be 2.46 eV and 643 nm respectively.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 3","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143583643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evaluation of physical, structural, and optical characteristics of sodium borosilicate glasses modified with Y2O3","authors":"Mostafa E. Kotb,&nbsp;Farid M. Abdel-Rahim,&nbsp;Kh. S. Shaaban,&nbsp;E. A. Abdel Wahab","doi":"10.1007/s11082-025-08084-5","DOIUrl":"10.1007/s11082-025-08084-5","url":null,"abstract":"<div><p>A new series of sodium borosilicate glasses doped with different concentrations of Y₂O₃, with the composition of 58B₂O₃–12SiO₂–(<span>(30{-}x)</span>)Na₂O–<span>(x)</span> Y₂O₃, with <i>x</i> = 0, 1, 2, 4, and 8 mol%, were prepared by melt-quenching methods. The amorphous status was confirmed by XRD analysis. The molar volume (<span>(V_{m})</span> cm³/mol) of these glasses decreased from 27.01 to 24.25, while the density (ρ g/cm³) increased from 2.45 to 3.27 g/cm³. The FTIR technique examined the structure of the fabricated glasses. The role of yttria in the glass is investigated. As a result, the concentration of (BOs) increases with the rising content of Y₂O₃ in the BSNY glass matrix. This increase in BO₄ enhances the overall structural integrity of the glass. The optical properties of the glass system were systematically investigated. A decrease in the energy gap was observed with increasing yttria concentration in the fabricated composition, while the refractive index exhibited a corresponding increase. The optical band gap values ranged from 3.56 to 2.91 eV, and the refractive index varied between 2.25 and 2.44, respectively. Additional factors and coefficients, including optical conductivity, electronegativity, metallization, reflection loss, steepness parameter, and transmission factor, were accurately evaluated. The fabricated glass system demonstrates significant potential as a promising material for advanced optical and electronic applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 3","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-025-08084-5.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143583399","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Improved channel estimation for underwater wireless optical communication OFDM systems by combining deep learning and machine learning models","authors":"Wessam M. Salama,&nbsp;Moustafa H. Aly","doi":"10.1007/s11082-025-08090-7","DOIUrl":"10.1007/s11082-025-08090-7","url":null,"abstract":"&lt;div&gt;&lt;p&gt;Recent studies on channel estimation in wireless communication systems have focused on deep learning methods. Our primary contribution is based on the use of DenseNet121 hybrid with Random Forest (RF), Gated Recurrent Units (GRU), Long Short-Term Memory Networks (LSTM), and Recurrent Neural Networks (RNN) to improve the channel estimation and lower the error rate. In order to mitigate inter-symbol interference and map the datasets, this paper introduces M-quadrature amplitude modulation (16-QAM) and orthogonal frequency division multiplexing (OFDM), which is based on quadrature phase shift keying (QPSK). Additionally, the existence or lack of cyclic prefixes forms the basis of our simulation. Additionally, the suggested models are investigated using pilot samples 2, 4, 8, and 64. Labeled OFDM signal samples, where the labels match the signal received after applying OFDM and passing through the medium, are used to train the proposed models. The DenseNet121 functions as a powerful feature extractor to extract intricate spatial information from received signal data. Sequential models like as RNN, LSTM, and GRU are used to model temporal dependencies in the retrieved features. RF is also utilized to exploit non-linear relationships and interactions between features to further increase prediction accuracy and reduce bit error rate (BER). By comparing the models using key metrics like accuracy, bit error rate (BER), and mean squared error (MSE), superior performance is attained based on the DenseNet121_RNN_GRU_RF model. Additionally, the DLMs are assessed against traditional methods like minimal mean square error (MMSE) and least squares (LS). Using the DenseNet121_RNN_GRU_RF model indicates a considerable gain over alternative architectures, with an improvement of 36.3% over DensNet121-RNN-LSTM-RF, according to a comparison of the suggested models without cyclic prefix for OFDM_QPSK. The improvement in percentages of roughly 63.3% over DensNet121-RNN-LSTM, 68.18% over DensNet121-GRU, 72.7% over DensNet121-LSTM, and 86.3% is the improvements of DenseNet121_RNN_GRU_RF over DensNet121-RNN are 86.3 and 72.7%, respectively, over DensNet121-GRU and DensNet121-LSTM. The DenseNet121_RNN_GRU_RF model performs better than the other models when compared to the suggested model with cyclic prefix for OFDM_QPSK. Compared to DenseNet121_RNN_LSTM_RF, the DenseNet121_RNN_GRU_RF model improves BER by about 45%. In contrast, the DenseNet121_RNN_GRU_RF model outperforms DenseNet121_RNN_LSTM by roughly 66.6%. It outperforms DenseNet121_GRU by 71.4%, DenseNet121_LSTM by 80.9%, and DenseNet121_RNN by 90.4%. Additionally, DenseNet121_RNN_GRU_RF shows a significant improvement over LS, requiring a 70% improvement over the LS approach. DenseNet121_RNN_GRU_RF outperforms the Minimum Mean Square Error (MMSE) by roughly 39.5%. Additionally, when using QPSK, higher pilot counts typically translate into lower MSE values. At MSE = &lt;span&gt;({10}^{-3},)&lt;/span&gt; the improvement of","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 3","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-025-08090-7.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143583548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Investigating the effect of rotary photon dragging on temporal cloaking under the influence of Kerr nonlinearity","authors":"Aftab Khan,&nbsp;Afzal Khan,&nbsp;Rafi Ud Din","doi":"10.1007/s11082-025-08097-0","DOIUrl":"10.1007/s11082-025-08097-0","url":null,"abstract":"<div><p>In this research, we presented a four-level atomic model to investigate the impact of rotary photon drag on temporal cloaking, taking into account the influence of Kerr nonlinearity with stepwise increases in Kerr field intensity. The temporal cloaking intervals we recorded were <span>(5 mu s, 9.6 mu s, 15.6 mu s, 22.8 mu s,)</span> and <span>(31.4 mu s)</span>. Additionally, our findings indicate that while the temporal gap remains consistent during the light beam's transmission along the mechanical axis of rotation under the effect of rotary photon drag, the pulse intensity experiences distortion with increasing dragging angle. The numerical outcomes suggest promising applications in fields such as image design, image encoding, photonic crystal discovery, optical sensing technology, and secure communication with reduced noise between transmission and reception channels.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 3","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143583641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"First principles calculations of Sb2Se3 and SCAPS-1D simulation-guided optimization for improved photovoltaic properties in solar cells","authors":"Javid Ullah,&nbsp;Zia Ur Rehman,&nbsp;Khadija Anum,&nbsp;Ibrar ahmad,&nbsp;Tahir Ali,&nbsp;Khizar Hayat,&nbsp;Said Karim Shah","doi":"10.1007/s11082-025-08088-1","DOIUrl":"10.1007/s11082-025-08088-1","url":null,"abstract":"<div><p>This study explores the potential of Antimony Selenide (Sb₂Se₃) as an absorber layer (AL) for solar cells (SCs), focusing on its optical and electronic properties for enhancing photovoltaic performance. Using SCAPS-1D simulation and density functional theory (DFT), the material’s indirect bandgap of 1.12 eV was confirmed, with photon absorption beginning above 1 eV. The reflectivity of Sb₂Se₃ is significant in the 2.5–12 eV range, and its energy loss function is minimal in the visible spectrum, which is critical for achieving high-efficiency solar cells. Additionally, the optical conductivity peaks between 2 and 12 eV, with a maximum extinction coefficient at 2 and 9 eV, further highlighting its suitability for solar applications. The study optimizes device parameters, including defect density (Nt), absorber layer thickness, acceptor (N_A) and donor (N_D) densities, and series (Rs) and shunt (Rsh) resistances. The impact of environmental factors such as working temperature (WT) and sunlight intensity on device performance was also systematically investigated to understand the efficiency of Sb₂Se₃ solar cells under real-world conditions. Copper thiocyanate (CuSCN) and tin sulphate (SnS₂) were identified as the optimal electron transfer layer (ETL) and hole transfer layer (HTL), respectively. After these optimizations, the device demonstrated a remarkable power conversion efficiency (PCE) of 28.38%, with a short-circuit current density (Jsc) of 40.32 mA/cm², an open-circuit voltage (Voc) of 0.8207 V, and a fill factor (FF) of 85.78%. These results underscore the promising potential of Sb₂Se₃ as a high-efficiency absorber material for solar cells, with significant implications for future photovoltaic device development and material optimization strategies.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 3","pages":""},"PeriodicalIF":3.3,"publicationDate":"2025-03-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143583400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}