Optical and Quantum Electronics最新文献

{"title":"Fabrication, structure, optical and gamma-ray attenuation properties of borotellurite glasses doped with variable concentrations of cadmium oxide","authors":"Maryam Al Huwayz,&nbsp;A. M. Abdelghany,&nbsp;R. A. Elsad,&nbsp;Shaaban M. Shaaban,&nbsp;Y. S. Rammah,&nbsp;S. M. Kotb,&nbsp;S. Talaat,&nbsp;A. S. Abouhaswa","doi":"10.1007/s11082-024-07120-0","DOIUrl":"10.1007/s11082-024-07120-0","url":null,"abstract":"<div><p>Glass samples of CdO doped bario-fluoride borotellurite with nominal compositions of (45-x)B₂O₃ + 30TeO₂ + 15BaF₂ + 10Li₂O + xCdO and substitution ratios of x = 0.0 (Cd0.0), 0.5 (Cd0.5), 2.0 (Cd2.0), 4.0 (Cd4.0), and 7.0 (Cd7.0) mol% were synthesized using the well-known melt quenching process. The structure, physical, and optical characteristics of the prepared glasses have been investigated. The Phy-X/PSD software employed to evaluate the radiation attenuation competence of the prepared glasses. The XRD analysis confirmed that the Cd-0.0/Cd-7.0 samples were in amorphous nature. Density (ρ) varied from 3.8633 g/cm³ for Cd-0.0 sample to 4.2894 g/cm³ for Cd-7.0 sample. The molar volume (V_m) varied from 28.08 cm³/mol to 26.25 cm³/mol. The inclusion of CdO in the glasses network reduced the direct band gaps from 3.54 eV to 3.196 eV and the indirect band gaps from 3.23 eV to 2.85 eV, respectively. Urbach’s energy changed from 0.23 eV to 0.318 eV and refractive index (n) ranged between 2.333 and 2.439. Mass-absorption coefficient (MAC) values ranged between 30.696 − 0.032 cm²/g, 30.825–0.032 cm²/g, 31.210–0.032 cm²/g, 31.714–0.033 cm²/g and 32.450–0.033 cm²/g, for Cd0.0, Cd0.5, Cd2.0, Cd4.0, and Cd7.0 glass samples, respectively. Sample coded as Cd7.0 possessed the minimum half value layer (HVL) which ranged from 0.005 cm to 4.887 cm at photon energy 0.015 and 15 MeV, respectively. The effective atomic number (Z_eff) and effective ion density (N_eff) possessed the same trend of MAC parameter. Results confirmed that the present glasses are superior as γ-ray shields compared to other commercial materials.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"All inorganic CsSnI3-based perovskite solar cells: design and comprehensive optimization by SCAPS simulation and DFT study","authors":"Yongqi Liu,&nbsp;Xin Zhang,&nbsp;Cheng Zhang,&nbsp;Biao Wu,&nbsp;Maoliang Wu,&nbsp;Jiang Wu,&nbsp;Zaiguo Fu,&nbsp;Xinxia Ma,&nbsp;Yongfeng Qi,&nbsp;Wenhao Li","doi":"10.1007/s11082-024-06628-9","DOIUrl":"10.1007/s11082-024-06628-9","url":null,"abstract":"<div><p>Traditional lead-based solar cells are not easy to commercialize on a large scale due to their toxicity and instability to the environment and the human body. Tin-based perovskites have received widespread attention from scholars since they were discovered to have potential as absorber layers in perovskite solar cells. However, compared with lead-based perovskite solar cells (PSCs), tin-based perovskite solar cells as the absorber layer have lower power conversion efficiency. In addition, the most popular hole transport layer material is Spiro-OMeTAD, which is an expensive and poor stability organic material, which limits the development of PSC. To overcome the above issues, this work made a comprehensive optimization of the device structure by using SCAPS-1D software, and finally designed a high-performance all-inorganic CsSnI₃-based PSC. In addition, the electrical properties of the absorber layer are investigated by first-principles. Different from the traditional point-by-point optimization, this work adopts the two-factor dynamic optimization method, and the optimized power conversion efficiency is 30.58%, and the fill factor is 70.73%. This study demonstrates the potential of CsSnI₃ as an absorber layer of high-performance PSCs and provides guidance for future research on all-inorganic perovskite solar cells.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142664466","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"DFT calculations of pressure effects on structural stability, optoelectronic and thermoelectric properties of SrZrO3","authors":"Muhammad Rizwan,&nbsp;Hafiz Muhammad Naeem Ullah,&nbsp;Syed Shahbaz Ali,&nbsp;Uzma Hira,&nbsp;Hamza Naeem,&nbsp;Zahid Usman","doi":"10.1007/s11082-024-06495-4","DOIUrl":"10.1007/s11082-024-06495-4","url":null,"abstract":"<div><p>The mechanical stability, band gap enhancement, optical response and impact of pressure on thermoelectric figure of merit are considered vital parameters from thermoelectric device’s perspective based on SrZrO₃ (SZO). The knowledge of elastic constant expressed structural stability of SZO (cubic symmetry) even at elevated pressures. Cauchy’s pressure and Poisson’s ratios demonstrated brittle behavior of SZO till 10 GPa, and it transformed to ductile material for higher pressures. The topology of electronic band structure and its pressure effects are discussed with the help of density of states. Optical properties expressed significant shifting to higher energy values as a function of pressure. Seebeck coefficient and electrical conductivity showed an increasing trend with the application of external pressure, with no significant change in their graphical behavior from its ambient conditions. The lowest value of ZT is obtained at 40 GPa. The structural stability and sustained thermoelectric behavior at higher pressure declares SZO as ideal candidate for energy applications at extreme conditions.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Photonic generation of frequency agile LFM signals for ISAC systems","authors":"Yixiao Zhou,&nbsp;Shanghong Zhao,&nbsp;Xuan Li,&nbsp;Guodong Wang","doi":"10.1007/s11082-024-07751-3","DOIUrl":"10.1007/s11082-024-07751-3","url":null,"abstract":"<div><p>A compact photonic method to generate frequency agile linearly frequency modulated (LFM) signals is proposed demonstrated by experiment and simulation. A Mach–Zehnder modulator driven by an LFM waveform train and an electrical controlled optical tunable delay line driven by a coding sequence is employed. According to time–frequency linear relationship of LFM signals, the initial frequency of the generated signals can be shifted by adjusting the introduced time delay. Experiments are carried out to verify the feasibility of the proposed generator. Frequency agile LFM signals under 2FSK and 4FSK modulation with symbol rate of 4 and 8 Msps are successfully obtained. 0.15 m range resolution and 4 Mbps communication data rate are achieved with a 1–1.5 GHz driving LFM signal. This scheme features compact structure and excellent tunability, which are promising to find applications in anti-jamming ISAC systems.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645700","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Insights on bio-medical, quantum, and optoelectronic applications of 2D transition metal dichalcogenides–a review","authors":"Shashi Pandey,&nbsp;R. Kiran,&nbsp;Ravi Trivedi,&nbsp;Y. Raviprakash,&nbsp;Sudha D. Kamath,&nbsp;Vikash Mishra","doi":"10.1007/s11082-024-07787-5","DOIUrl":"10.1007/s11082-024-07787-5","url":null,"abstract":"<div><p>The fields of atomically thin two-dimensional transition metal dichalcogenides (2D TMDCs) have witnessed notable progress, resulting in a range of intriguing applications in nanoelectronics, photonics, sensing, energy storage, and opto-electronics. This article offers a comprehensive look at the latest progress in two-dimensional (2D) materials that go beyond graphene. Our main interest lies in TMDCs like MoS₂, WS₂, MoSe₂, and WSe₂. These materials are used in specific applications for advanced electronics and optoelectronics devices that depend on very thin atomic layers. Even though there have been challenges along the way in developing scalable and defect-free TMDCs on preferred substrates, scientists have managed to come up with innovative growth techniques that work well with both common and unconventional substrates. These developments have been driven by the increasing demand for precise and reliable TMDCs in real-world scenarios. TMDCs may play a critical role in the development in bio-medical applications, like biomedical imaging, medication administration, clinical diagnostics, and photodynamic therapy. A multilayer device architecture may facilitate the creation of a gate-defined quantum dot (QD) in transition metal dichalcogenides (TMDCs) for future quantum applications. Focus is on creating cutting-edge two-dimensional TMDCs with distinct features and new chemical characteristics. Furthermore, in addition to the realm of electronics, a considerable amount of research has focused on investigating the possibilities of these materials for energy and sensing applications, which are thoroughly analyzed.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Real-time DSP-Free 40 Gbit/s PAM4 transmission over 10 km fiber enabled by optical injection locking of directly modulated laser","authors":"Gleb Nazarikov,&nbsp;Simon Rommel,&nbsp;Idelfonso Tafur Monroy","doi":"10.1007/s11082-024-07754-0","DOIUrl":"10.1007/s11082-024-07754-0","url":null,"abstract":"<div><p>We present a comprehensive performance analysis of injection-locked directly modulated laser (DML) for optical communication systems, focusing on both non-return-to-zero (NRZ) and 4-level pulse amplitude modulation (PAM4) signal transmission. We demonstrate real-time PAM4 40 Gbit/s transmission over 10 km of single-mode fiber enabled by optical injection locking without pre-emphasis or post-equalization, achieving a bit error rate (BER) below <span>({10^{-6}})</span>, and doubling capacity compared to unlocked transmission with the same laser. Our study investigates the dependence of system performance on the injected power and frequency offset of the master laser. Results indicate that lower injection powers while maintaining a stable locking regime, yield better performance in terms of extinction ratio and BER. Optimized parameters lead to enhanced transmission performance, providing valuable insights into the design and optimization of injection-locked DML systems for optical communication applications employing direct modulation.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-024-07754-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645738","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Dynamics of localized solutions in three core coupled waveguides with quasi-periodic nonlinearity","authors":"Bruno M. Miranda,&nbsp;Ardiley T. Avelar,&nbsp;Wesley B. Cardoso,&nbsp;Dionisio Bazeia","doi":"10.1007/s11082-024-07757-x","DOIUrl":"10.1007/s11082-024-07757-x","url":null,"abstract":"<div><p>In this paper we investigate the behavior of localized solutions, specifically solitons, in a system of three coupled waveguides. The nonlinearity is modeled by a quasi-periodic modulation influencing the interaction between the waveguides. We analyze the evolution of the soliton profiles and their dynamics under varying modulation parameters, highlighting distinct behaviors such as attraction and repulsion among solitons. Our findings reveal that the system exhibits complex behaviors, depending on the interplay between the quasi-periodic modulation and the waveguide parameters. The study contributes to understanding the impact of quasi-periodic nonlinearity on soliton dynamics in coupled waveguide systems, laying the groundwork for potential applications in nonlinear optics and photonic devices.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Interband optical absorption coefficient of the diluted magnetic semiconductor ellipsoid quantum dot with Rashba spin orbit interaction","authors":"A. M. Babanlı,&nbsp;M. Balcı,&nbsp;M. Ovezov,&nbsp;G. Orazov,&nbsp;V. Sabyrov","doi":"10.1007/s11082-024-07774-w","DOIUrl":"10.1007/s11082-024-07774-w","url":null,"abstract":"<div><p>In this paper, the effects of temperature, magnetic field, Rashba parameter, Mn atom impurity concentration and ellipsoid radius on the optical absorption coefficient of a dilute magnetic semiconductor ellipsoid quantum dot with spin–orbit Rashba interaction are investigated. Within the framework of the approximation of effective masses, the eigenvalue and the wave vector of the system are calculated. The obtained values are used to find the expression of the optical absorption coefficient for interband optical transitions. According to the results, temperature, magnetic field, Rashba parameter, Mn atom impurity concentration and ellipsoid radius change significantly affects the optical absorption coefficient.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Luminescence properties of Dy3+, Sm3+ codoped 20SiO2-20CaO-60P2O5 glass","authors":"Pingsheng Yu,&nbsp;Buxin Wang,&nbsp;Ran Yang,&nbsp;Jun Xu","doi":"10.1007/s11082-024-07786-6","DOIUrl":"10.1007/s11082-024-07786-6","url":null,"abstract":"<div><p>Luminescence and energy-transfer in <i>x</i>Dy₂O₃–<i>y</i>Sm₂O₃–20SiO₂–20CaO–60P₂O₅ (<i>x</i> = 0.3, 0.5, 0.8; <i>y</i> = 0.5, 1.0, 1.5) glasses were investigated. The glass samples were synthetized by conventional melt quenching method. The combined luminescence of Dy³⁺ and Sm³⁺ ions in phosphosilicate glass was systematically measured. When excited by 361 nm, 373 nm, and 400 nm excitation light, Dy³⁺ and Sm³⁺ ions can emit light simultaneously. The glass sample 0.8Dy₂O₃–0.5Sm₂O₃–20SiO₂–20CaO–60P₂O₅ under 373 nm excitation presents a white light emission (the color coordinates are x = 0.3386, y = 0.3359) in the CIE diagram, and the correlated color temperature (CCT) is about 6000 K. The decay time test shows that there may be energy transfer from Dy to Sm. The Dy³⁺, Sm³⁺ codoped 20SiO₂–20CaO–60P₂O₅ glass will be further studied as a white light source in future.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Nanostructured AlxIn1−xPySbzAs1−y–z semiconductor alloy as a competent material for optoelectronic and solar cell applications","authors":"Elkenany Brens Elkenany,&nbsp;Hasan B. Albargi,&nbsp;R. Dhahri,&nbsp;A. M. Al-Syadi,&nbsp;O. A. Alfrnwani","doi":"10.1007/s11082-024-07773-x","DOIUrl":"10.1007/s11082-024-07773-x","url":null,"abstract":"<div><p>Al_xIn_1−xP_ySb_zAs_1−y–z alloy is a novel pentanary zinc-blende semiconductor compound. The composition and temperature-dependent electronic band structure, refractive index (n), high-frequency dielectric constant <span>((varepsilon_{infty } ),)</span> static dielectric constant <span>((varepsilon_{o} ))</span> of nanostructured Al_xIn_1−xP_ySb_zAs_1−y–z lattice matched to InP substrate has been explored. Also, the relationship between the acoustic speed and phonon frequencies (<i>ω</i>_LO and <i>ω</i>_TO) of Al_xIn_1-xP_ySb_zAs_1−y–z for InP substrate with composition and temperature has been studied. Our calculations implemented a pseudopotential approach (EPM) with a virtual crystal approximation (VCA). The refractive index (n) and optical dielectric constant <span>((varepsilon_{infty } ))</span> are decreased by increasing y from 0 to 0.5 and then increasing from <i>y</i> = 0.5 to 1. The static dielectric constant <span>((varepsilon_{o} ))</span> is reduced by growing y from 0 to 0.4 and after that improved from <i>y</i> = 0.4 to 1. The <i>ω</i>_LO at (<i>z</i> = 0, <i>T</i> = 200 K) is increased by increasing the P content from 0 to about 0.28, and after that, it decreases by increasing y from 0.28 to 1. The <i>ω</i>_TO at (<i>z</i> = 0, <i>T</i> = 200 K) is increased when the phosphorus content is increased from 0 to 0.23 and decreases when the y value is increased from about 0.23 to 1. The n, and <span>(varepsilon_{infty })</span> are enhanced by enhancing the temperature from 0 to 500 K, while the static dielectric constant is decreased by enhancing temperature. Our results and the available experimental and published data showed good agreement when compared. The flexibility of Al_xIn_1−xP_ySb_zAs_1−y–z originates from its ability to customize its electronic and optical properties by varying the composition. This makes it a potential material for many applications in optoelectronics such as solar cells, and high-speed electronics.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"56 12","pages":""},"PeriodicalIF":3.3,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142645732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}