Optical and Quantum Electronics最新文献

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Synthesis of ZnO/SnO2 composite films for solar cells 太阳能电池用ZnO/SnO2复合薄膜的合成
IF 4 3区 工程技术
Optical and Quantum Electronics Pub Date : 2026-09-10 DOI: 10.1007/s11082-026-09131-5
Vanja Fontenele Nunes, Francisco Nivaldo Aguiar Freire, Antônio Sérgio Bezerra Sombra
{"title":"Synthesis of ZnO/SnO2 composite films for solar cells","authors":"Vanja Fontenele Nunes,&nbsp;Francisco Nivaldo Aguiar Freire,&nbsp;Antônio Sérgio Bezerra Sombra","doi":"10.1007/s11082-026-09131-5","DOIUrl":"10.1007/s11082-026-09131-5","url":null,"abstract":"<div><p>Metal oxide films are synthesized as semiconductors in solar cells. Zinc oxide is often used as an electrode in solar cells due to its good photoconversion properties. These same properties can be tuned by adding other elements to the main zinc oxide matrix. Dye sensitized solar cells represent the third generation of solar cells, with advantages such as flexibility and simple set up. Dye solar cells convert energy, based on the electron transport between dye, photoanode and counter electrode. Zinc oxide films were synthesized by adding tin oxide at different percentages, 5, 10 and 15%, and tested in dye cells. The zinc oxide films with 15% tin oxide presented higher photovoltaic efficiency, around 0.96%, current density of 2.98 mA/cm<sup>2</sup> and open voltage of 0.61 V. At 10% tin oxide, the values were 0.54 FF and 2.32 mA/cm<sup>2</sup>. And at 5%, open voltage was 0.64 V and 1.53 mA/cm<sup>2</sup> of current. All the films had band gap around 3.25 eV, lower than the average zinc oxide film around 3.31 eV; thickness ranging from 1 to 2.4 μm, with crystallite size between 28 and 80 nm and dislocation densities were 12.2 × 10<sup>14</sup>; 3. x10<sup>14</sup> and 1.5 × 10<sup>14</sup> (lines.m<sup>− 2</sup>), respectively for 5, 10 and 15% tin/zinc films.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-026-09131-5.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148927350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tailoring optical and antibacterial traits of potassium acid phthalate crystal by amino acids for photonics device applications 利用氨基酸裁剪邻苯二甲酸钾晶体的光学和抗菌特性,用于光子器件
IF 4 3区 工程技术
Optical and Quantum Electronics Pub Date : 2026-09-10 DOI: 10.1007/s11082-026-09134-2
Mohammed Imran Anees, M. I. Baig, A. Ibrahim, Mohd Shkir, M. A. Aziz, Mohd Anis
{"title":"Tailoring optical and antibacterial traits of potassium acid phthalate crystal by amino acids for photonics device applications","authors":"Mohammed Imran Anees,&nbsp;M. I. Baig,&nbsp;A. Ibrahim,&nbsp;Mohd Shkir,&nbsp;M. A. Aziz,&nbsp;Mohd Anis","doi":"10.1007/s11082-026-09134-2","DOIUrl":"10.1007/s11082-026-09134-2","url":null,"abstract":"<div><p>The current article has been aimed to grow potassium acid phthalate (KAP) crystal in the presence of amino acids (glycine, L-alanine) influenced solvent via the slow solvent evaporation method. Novel aspects have been explored by investigating the impact of amino acids (glycine, L-alanine) on structural, UV-visible, frequency conversion efficiency, third-order nonlinear optical (TONLO), and antibacterial prospects of KAP crystal. The single crystal XRD analysis has been employed to determine structural parameters of grown crystals. The elemental detection of pure and amino acid (glycine, L-alanine) influenced KAP crystal has been done by energy dispersive spectroscopy. The increasing impact of glycine and L-alanine on transmittance of KAP crystal has been evaluated within 200–1100 nm by means of UV-visible spectral analysis. Kurtz-Perry test has been implemented to affirm the enhanced second harmonic generation (SHG) efficiency of amino acid-influenced KAP crystal with reference to KAP crystal. TONLO characteristics of amino acid (glycine, L-alanine) influenced KAP crystal has been evaluated at 632.8 nm by means of Z-scan analysis. TONLO susceptibility (ꭓ<sup>3</sup>), absorption coefficient (ꞵ) and refractive index (n<sub>2</sub>) of grown crystals have been determined using Z-scan data. The selected bacteria (<i>S. aureus</i>,<i> B. subtilis</i>,<i> E. coli</i>,<i> S. typhi</i>) environment has been catered to grow crystals for exploring the antibacterial response and zone of inhibition has been determined.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148927351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dynamics of quantum correlations in a squeezed generalized amplitude damping channel 压缩广义振幅阻尼信道中量子相关动力学
IF 4 3区 工程技术
Optical and Quantum Electronics Pub Date : 2026-09-10 DOI: 10.1007/s11082-026-09136-0
Tamalapakula Kesavulu, R. Muthuganesan
{"title":"Dynamics of quantum correlations in a squeezed generalized amplitude damping channel","authors":"Tamalapakula Kesavulu,&nbsp;R. Muthuganesan","doi":"10.1007/s11082-026-09136-0","DOIUrl":"10.1007/s11082-026-09136-0","url":null,"abstract":"<div><p>We investigate the dynamics of concurrence, measurement-induced nonlocality (MIN), and local quantum Fisher information (LQFI) in two-qubit Werner-like states subjected to a squeezed generalized amplitude damping channel with memory. Our results show that concurrence undergoes entanglement sudden death, whereas MIN and LQFI persist over broader interaction regimes. LQFI exhibits characteristic non-monotonic decay–revival dynamics, while increasing channel memory suppresses decoherence and enhances the preservation of quantum correlations. Reservoir squeezing provides an additional, though comparatively weaker, protective effect. Under the investigated SGADC parameters, LQFI shows stronger dynamical resilience; however, owing to the distinct operational meanings and normalizations of these measures, this behavior represents measure-specific robustness rather than a universal hierarchy.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148927347","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pressure-induced tuning of the structural, electronic, optical, and thermoelectric properties of cubic LiCaBr₃: a first-principles study 立方LiCaBr₃结构、电子、光学和热电性质的压力诱导调谐:第一性原理研究
IF 4 3区 工程技术
Optical and Quantum Electronics Pub Date : 2026-09-05 DOI: 10.1007/s11082-026-09114-6
Tasawer Shahzad Ahmad, Anwar Ul Haq, Nimra Ehsan, Abdullah Almohammedi, Badriah S. Almutairi, M. I. khan
{"title":"Pressure-induced tuning of the structural, electronic, optical, and thermoelectric properties of cubic LiCaBr₃: a first-principles study","authors":"Tasawer Shahzad Ahmad,&nbsp;Anwar Ul Haq,&nbsp;Nimra Ehsan,&nbsp;Abdullah Almohammedi,&nbsp;Badriah S. Almutairi,&nbsp;M. I. khan","doi":"10.1007/s11082-026-09114-6","DOIUrl":"10.1007/s11082-026-09114-6","url":null,"abstract":"<div><p>We studied the pressure-dependent structural, electronic, elastic and optical characteristics of cubic LiCaBr₃ by first-principles DFT calculations. Our findings reveal that the lattice parameter gradually decreases from 0 to 60 GPa. The increase in interatomic interactions under pressure results in changes in the electronic band structure and shifts in the density of states around the Fermi level. Moreover, the pseudogap shift to the left of the Fermi level with increasing pressure, implying an electronic structure change. The energy peaks in the valence band shift to lower energy levels, and covalency increases with pressure. The mechanical properties indicate that LiCaBr₃ remains ductile throughout the investigated pressure range, although its ductility gradually decreases with increasing pressure. The Pugh ratio (B/G) decreases from 2.43 at 0 GPa to 1.82 at 60 GPa, remaining above the critical value of 1.75. This pressure-induced stiffening, reflected by the substantial increase in the elastic moduli, is accompanied by a gradual decrease in the Pugh ratio from 2.43 to 1.82, while remaining above the ductile-to-brittle threshold of 1.75. Moreover, the Cauchy pressure becomes increasingly negative at higher pressures, reaching −36.06 GPa at 60 GPa, indicating an enhanced directional/covalent character of bonding under compression. Our findings may provide useful theoretical guidance for future experimental studies toward the development of electronic devices based on the compounds studied for photovoltaic and optoelectronic applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148926890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Tunable color and superior thermal stability of laser-driven white light enabled by gal phosphors and phosphor-in-glass structures 可调的颜色和优越的热稳定性的激光驱动的白光由gal荧光粉和玻璃中的磷结构
IF 4 3区 工程技术
Optical and Quantum Electronics Pub Date : 2026-09-04 DOI: 10.1007/s11082-026-09129-z
Seung-Min Lee, Hong-Shik Lee
{"title":"Tunable color and superior thermal stability of laser-driven white light enabled by gal phosphors and phosphor-in-glass structures","authors":"Seung-Min Lee,&nbsp;Hong-Shik Lee","doi":"10.1007/s11082-026-09129-z","DOIUrl":"10.1007/s11082-026-09129-z","url":null,"abstract":"<div><p>Blue laser-driven white light sources have attracted considerable attention for high-power lighting because of their high luminance and excellent directionality. However, thermal degradation and color instability during continuous operation remain major challenges. In this study, the optical properties of a commercial Ce³⁺-activated YAG yellow phosphor (NYAG, Intematix, USA), commercial GAL aluminate phosphors (GAL545 and GAL555, Intematix, USA), and phosphor-in-glass (PIG) structures were systematically investigated under blue laser excitation by considering phosphor concentration, continuous operation, red phosphor incorporation, and structural parameters. NYAG exhibited high luminous flux but significant thermal-induced color instability during prolonged excitation, whereas GAL545 demonstrated superior thermal stability while maintaining high luminous performance. Red phosphor incorporation effectively improved color rendering and reduced correlated color temperature, although excessive addition decreased luminous efficiency. In PIG structures, phosphor thickness and emission area significantly affected the balance between luminous efficacy and color quality. These results provide practical design guidelines for developing thermally stable and color-tunable laser-driven white light sources for high-power lighting applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148926310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Three-dimensional optical vortices in nonlinear bessel waveguides 非线性贝塞尔波导中的三维光涡旋
IF 4 3区 工程技术
Optical and Quantum Electronics Pub Date : 2026-09-04 DOI: 10.1007/s11082-026-09120-8
Carlos F. Sánchez, Humberto Michinel, Boris Malomed, Ángel Paredes, José R. Salgueiro
{"title":"Three-dimensional optical vortices in nonlinear bessel waveguides","authors":"Carlos F. Sánchez,&nbsp;Humberto Michinel,&nbsp;Boris Malomed,&nbsp;Ángel Paredes,&nbsp;José R. Salgueiro","doi":"10.1007/s11082-026-09120-8","DOIUrl":"10.1007/s11082-026-09120-8","url":null,"abstract":"<div><p>We explore the formation, stability, and propagation dynamics of light bullets carrying orbital angular momentum (vorticity) in Bessel-structured nonlinear graded-index waveguides. While these waves are prone to the collapse in uniform three-dimensional media, we demonstrate that their stabilization is provided by a squared-Bessel index profile in the plane orthogonal to the propagation direction, which may play the role of the waveguiding or antiwaveguiding potential. Different solution families are obtained, revealing a variety of power-vs.-propagation-constant diagrams, characterizing the coexistence of multiple families. We analyze the propagation dynamics in a wide experimentally accessible parameter range. Our results contribute to the understanding of nonlinear light localization in multidimensional settings and suggest new possibilities for using structured light in advanced photonic applications.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s11082-026-09120-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148926311","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Combined impact of two vortex beams and Rydberg atoms on the Hartman effect 双涡旋光束和里德伯原子对哈特曼效应的联合影响
IF 4 3区 工程技术
Optical and Quantum Electronics Pub Date : 2026-09-04 DOI: 10.1007/s11082-026-09124-4
Saeideh Kevin, Mostafa Sahrai
{"title":"Combined impact of two vortex beams and Rydberg atoms on the Hartman effect","authors":"Saeideh Kevin,&nbsp;Mostafa Sahrai","doi":"10.1007/s11082-026-09124-4","DOIUrl":"10.1007/s11082-026-09124-4","url":null,"abstract":"<div><p>This study examines the impact of the orbital angular momentum (OAM) of two vortex coupling fields on the Hartman effect in a one-dimensional photonic crystal. The defect layer doped by vee-ladder type four-level atoms containing a Rydberg state. By adjusting the Rydberg atoms along with the vortex coupling fields, the Hartman effect can effectively be controlled solely by the OAM. In addition, we found that the probe field transmission is also increased with proper choice of OAM of the vortex coupling beams.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148926312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spectrally diverse pulse generation via passive Q-switching in multi-wavelength fiber and solid-state lasers 在多波长光纤和固体激光器中通过无源q开关产生光谱变化的脉冲
IF 4 3区 工程技术
Optical and Quantum Electronics Pub Date : 2026-09-04 DOI: 10.1007/s11082-026-09108-4
Ahmed Shakir Al-Hiti, Sulaiman Wadi Harun
{"title":"Spectrally diverse pulse generation via passive Q-switching in multi-wavelength fiber and solid-state lasers","authors":"Ahmed Shakir Al-Hiti,&nbsp;Sulaiman Wadi Harun","doi":"10.1007/s11082-026-09108-4","DOIUrl":"10.1007/s11082-026-09108-4","url":null,"abstract":"<div><p>Passively Q-switched lasers have become essential sources of short optical pulses due to their simplicity, compactness, and high peak power. In parallel with the growing demand for spectrally versatile laser sources, multi-wavelength Q-switched operation has attracted increasing interest in both fiber and solid-state laser platforms. In contrast to conventional single-wavelength Q-switched lasers, multi-wavelength systems exhibit richer spectral and temporal dynamics resulting from gain competition, wavelength-dependent saturable absorption, and intracavity filtering effects. This review provides an in-depth discussion of the physical mechanisms, gain media, saturable absorbers (SAs), and cavity architectures that enable passively Q-switched multi-wavelength laser operation. Recent experimental progress in fiber and solid-state lasers is critically examined, with particular emphasis on pulse characteristics, wavelength stability, and energy distribution among lasing lines. Finally, the challenges limiting practical implementation and the prospects for tunable, power-scalable, and mid-infrared multi-wavelength Q-switched laser sources are discussed.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148926309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Numerical investigation of optoelectronic performance limits in lead-free (FA)0.5(MA)0.5SnI3 perovskite solar cells using SCAPS-1D 基于SCAPS-1D的无铅(FA)0.5(MA)0.5 sni3钙钛矿太阳能电池光电性能极限数值研究
IF 4 3区 工程技术
Optical and Quantum Electronics Pub Date : 2026-09-02 DOI: 10.1007/s11082-026-09102-w
Golam Morshed, Md. Hasnain, Joyonta Das, Abdul Wahed, Md. Emon Mian
{"title":"Numerical investigation of optoelectronic performance limits in lead-free (FA)0.5(MA)0.5SnI3 perovskite solar cells using SCAPS-1D","authors":"Golam Morshed,&nbsp;Md. Hasnain,&nbsp;Joyonta Das,&nbsp;Abdul Wahed,&nbsp;Md. Emon Mian","doi":"10.1007/s11082-026-09102-w","DOIUrl":"10.1007/s11082-026-09102-w","url":null,"abstract":"<div><p>Defect-assisted recombination, unfavorable interfacial band alignment, and transport losses remain major barriers to realizing the theoretical efficiency potential of lead-free Sn-based perovskite solar cells. To systematically investigate these limitations, planar (FA)<sub>0.5</sub>(MA)<sub>0.5</sub>SnI<sub>3</sub> devices were numerically analyzed using the SCAPS-1D drift–diffusion framework, with the objective of identifying optoelectronic performance trends, dominant loss mechanisms, and theoretical operating limits rather than predicting directly realizable experimental efficiencies. A range of commonly reported electron transport layers (CdS, PC<sub>61</sub>BM, SnS<sub>2</sub>, and WS<sub>2</sub>) and hole transport layers (CdTe, CuI, MoO<sub>3</sub>, MoS<sub>2</sub>, NiO, and PTAA) were systematically screened to evaluate the influence of energy-band alignment and carrier selectivity on device behavior. Parametric analyses of absorber thickness, bulk defect density, defect energy position, carrier-capture cross-section, background doping, and parasitic series and shunt resistances were performed to elucidate the dominant loss mechanisms governing short-circuit current density, open-circuit voltage, fill factor, and power conversion efficiency. Among the investigated configurations, the optimized FTO/WS<sub>2</sub>/(FA)<sub>0.5</sub>(MA)<sub>0.5</sub>SnI<sub>3</sub>/CuI/Au device architecture exhibited favorable optoelectronic characteristics, yielding a simulated PCE of 27.92%, with V<sub>oc</sub>=0.945 V, J<sub>sc</sub>=34.43 mA cm⁻<sup>2</sup>, and FF = 85.77% under idealized modeling conditions. The calculated external quantum efficiency showed a broad and nearly uniform response across the visible spectrum, indicating efficient photogeneration and carrier collection within the limitations of the one-dimensional model. The results indicate that defect-mediated recombination and interface-related transport losses are among the key factors limiting the achievable voltage and fill factor, while the optimized CuI-, PTAA-, and NiO-based devices exhibit only marginal performance differences. The reported results represent theoretical upper-bound performance limits and provide physics-based design guidelines for defect control, transport-layer selection, and interface engineering in lead-free tin-based perovskite solar cells.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148926527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Band Alignment and Charge-Transport Tradeoffs in Ag2S QD Solar Cells: Quantum Confinement vs. Recombination Across Sizes and Thicknesses Ag2S QD太阳能电池的能带对准和电荷输运权衡:跨尺寸和厚度的量子约束与重组
IF 4 3区 工程技术
Optical and Quantum Electronics Pub Date : 2026-09-02 DOI: 10.1007/s11082-026-09104-8
Masood Mehrabian, Maryam Taleb-Abbasi, Pourya Norouzzadeh, Asmet N. Azizova, Ghodrat Mahmoudi, Omid Akhavan
{"title":"Band Alignment and Charge-Transport Tradeoffs in Ag2S QD Solar Cells: Quantum Confinement vs. Recombination Across Sizes and Thicknesses","authors":"Masood Mehrabian,&nbsp;Maryam Taleb-Abbasi,&nbsp;Pourya Norouzzadeh,&nbsp;Asmet N. Azizova,&nbsp;Ghodrat Mahmoudi,&nbsp;Omid Akhavan","doi":"10.1007/s11082-026-09104-8","DOIUrl":"10.1007/s11082-026-09104-8","url":null,"abstract":"<div><p>This simulation-based study uses SCAPS-1D to design and optimize silver sulfide (Ag₂S) solar cells in both bulk and quantum dot (QD) absorber configurations. Ag₂S, a low-cost and environmentally benign material, was investigated with absorber sizes ranging from bulk to 10 nm, 5 nm, 3 nm, and 2 nm QDs. Parameters for QDs smaller than 10 nm are extrapolated using quantum confinement theory and have not been experimentally confirmed; these simulations represent a theoretical exploration of extreme quantum confinement. This simulation-based study uses SCAPS-1D to design and optimize silver sulfide (Ag₂S) solar cells in both bulk and quantum dot (QD) absorber configurations. For QDs smaller than 10 nm, SCAPS-1D treats the absorber as a homogeneous effective medium and cannot explicitly model ligand chemistry, interdot tunneling, or energetic disorder. Therefore, results for 5 nm, 3 nm, and 2 nm QDs should be interpreted as hypothetical sensitivity analyses exploring quantum confinement trends, not as quantitative predictions for real devices. Within this framework, bulk Ag₂S and 10 nm QDs achieved the highest simulated efficiencies (16.60% and 16.86%, respectively), while smaller QDs exhibited higher built-in potentials and Voc due to quantum confinement but suffered from intensified recombination losses. These efficiency values are simulation results obtained using SCAPS-1D with effective-medium approximations for QD solids; they represent theoretical upper limits under idealized assumptions rather than predictions for existing experimental devices. Thickness optimization further highlighted distinct trends across device types. Bulk Ag₂S reached a maximum simulated efficiency of 23.65% at ~ 500 nm, whereas QD absorbers required much thinner layers: ~150 nm for 10 nm QDs, ~ 110 nm for 5 nm QDs, and only 21–30 nm for 3 nm and 2 nm QDs. Overall, these findings demonstrate that no single QD size is universally optimal; instead, high-performance Ag₂S solar cells demand careful balancing of absorber thickness, QD size, and interface engineering. This work provides theoretical insights for advancing Ag₂S-based photovoltaics as sustainable alternatives in next-generation solar technologies.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"58 11","pages":""},"PeriodicalIF":4.0,"publicationDate":"2026-09-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"148926528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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